CN115877908B - Band gap voltage reference circuit, second-order nonlinear correction circuit and chip thereof - Google Patents
Band gap voltage reference circuit, second-order nonlinear correction circuit and chip thereof Download PDFInfo
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- CN115877908B CN115877908B CN202310189755.XA CN202310189755A CN115877908B CN 115877908 B CN115877908 B CN 115877908B CN 202310189755 A CN202310189755 A CN 202310189755A CN 115877908 B CN115877908 B CN 115877908B
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Abstract
A band gap voltage reference circuit and a second-order nonlinear correction circuit and a chip thereof, the second-order nonlinear correction circuit comprises a PNP transistor Q1 and a PNP transistor Q2 which form a common emitter differential pair, an NPN transistor Q3 and an NPN transistor Q4 which form an active load, an NPN transistor Q5 and an NPN transistor Q6 which form a level shift circuit, and an NPN transistor Q7 which is a load of the level shift circuit. The second-order nonlinear correction circuit can further perform second-order compensation on the band-gap voltage reference circuit with first-order compensation, reduces the temperature coefficient in the temperature range of-40-125 ℃ to 11 ppm/DEG C, reduces the Monte Carlo dispersibility of the output reference voltage, can meet the requirement of a high-performance system on the voltage reference, is beneficial to improving the overall circuit performance, has a simple structure and is easy to realize.
Description
Technical Field
The present disclosure relates to integrated circuit technology, and more particularly, to a bandgap voltage reference circuit, a second-order nonlinear correction circuit and a chip thereof.
Background
In the field of integrated circuit design, bandgap voltage reference circuits are fundamental blocks in digital-to-analog hybrid circuits. Its power supply ripple suppression capability, temperature characteristics, and noise characteristics affect the performance of the overall circuit. Bandgap voltage reference circuits with high power supply ripple rejection capability, high temperature stability are receiving increasing attention in industrial and automotive applications.
In the related art, in order to obtain a bandgap reference voltage with a relatively low temperature coefficient, a reference voltage V is generally obtained REF The Taylor function expansion is performed according to the temperature: v (V) REF =a+bT+cT 2 + … …, and first order compensation of the bandgap voltage reference circuit. However, the bandgap reference voltage after the first-order compensation can only reduce the influence of the first-order coefficient b, and the temperature coefficient is still higher, so that the requirement of the high-performance system on the voltage reference cannot be met.
Disclosure of Invention
In order to solve the defects existing in the prior art, the purpose of the application is to provide a band gap voltage reference circuit, a second-order nonlinear correction circuit and a chip thereof, which can further compensate the band gap voltage reference circuit with first-order compensation with second-order compensation, reduce the temperature coefficient in the temperature range of-40-125 ℃ to 11 ppm/DEG C, reduce the Monte Carlo dispersibility of output reference voltage, meet the requirement of a high-performance system on the voltage reference, are beneficial to improving the performance of the whole circuit, have a simple structure and are easy to realize.
To achieve the above object, the present application provides a second-order nonlinear correction circuit of a bandgap voltage reference circuit, the second-order nonlinear correction circuit comprising:
a base electrode of the PNP transistor Q1 is connected with the first input end of the second-order nonlinear correction circuit, a collector electrode of the PNP transistor Q1 is respectively connected with a collector electrode of the NPN transistor Q3 and a base electrode of the NPN transistor Q6, and an emitter electrode of the PNP transistor Q1 is connected with a power supply voltage;
a base electrode of the PNP transistor Q2 is connected with a second input end of the second-order nonlinear correction circuit, a collector electrode of the PNP transistor Q2 is respectively connected with a collector electrode of the NPN transistor Q4 and a base electrode of the NPN transistor Q5, and an emitter electrode of the PNP transistor Q2 is connected with the power supply voltage;
NPN transistor Q3, its base connects the bias voltage input, the emitter is grounded through the resistance R1;
the base electrode of the NPN transistor Q4 is connected with the bias voltage input end, and the emitter electrode of the NPN transistor Q is grounded through a resistor R2;
an NPN transistor Q5, the collector of which is connected with the first output end of the second-order nonlinear correction circuit and is connected with the power supply voltage through a resistor R3, and the emitter of which is respectively connected with the emitter of an NPN transistor Q6 and the collector of an NPN transistor Q7;
an NPN transistor Q6, the collector of which is connected with the second output end of the second-order nonlinear correction circuit and is connected with the power supply voltage through a resistor R4;
NPN transistor Q7, its base is connected to the bias voltage input, and the emitter is grounded through resistor R5.
Further, the transfer function image of the second-order nonlinear correction circuit is a quadratic curve with an upward opening.
Further, the resistance values of the resistor R1 and the resistor R2 are 5KΩ; the resistance values of the resistor R3 and the resistor R4 are 290KΩ; the resistance value of the resistor R5 is 2.5KΩ.
To achieve the above object, the present application further provides a bandgap voltage reference circuit, which includes the second-order nonlinear correction circuit as described above.
Further, the bandgap voltage reference circuit further includes:
the inverting input end of the feedback amplifier A is connected with the first output end of the second-order nonlinear correction circuit, the non-inverting input end of the feedback amplifier A is connected with the second output end of the second-order nonlinear correction circuit, and the output ends of the feedback amplifier A are respectively connected with the grid electrode of the field effect tube PM1 and the grid electrode of the field effect tube PM 2;
the source electrode of the field effect transistor PM1 is connected with the power supply voltage, and the drain electrode of the field effect transistor PM1 is respectively connected with the first input end of the second-order nonlinear correction circuit and the emitter electrode of the PNP transistor Q8 through a resistor R6;
the source electrode of the field effect tube PM2 is connected with the power supply voltage, the drain electrode of the field effect tube PM2 is connected with the voltage output end of the band gap voltage reference circuit, and the field effect tube PM2 is connected with the second input end of the second-order nonlinear correction circuit through a resistor R7;
a PNP transistor Q8, the base and collector of which are grounded;
PNP transistor Q9, its base and collector are grounded, and the emitter is connected to the second input terminal of the second-order nonlinear correction circuit through resistor R8.
To achieve the above object, the chip provided in the present application includes a bandgap voltage reference circuit as described above.
According to the band gap voltage reference circuit, the second-order nonlinear correction circuit and the chip thereof, the band gap voltage reference circuit with the first-order compensation can be subjected to the second-order compensation, the temperature coefficient in the temperature range of-40-125 ℃ is reduced to 11 ppm/DEG C, meanwhile, the Monte Carlo dispersibility of the output reference voltage is reduced, the requirement of a high-performance system on the voltage reference can be met, the performance of the whole circuit is improved, and the band gap voltage reference circuit is simple in structure and easy to realize.
Additional features and advantages of the application will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the application.
Drawings
The accompanying drawings are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate and explain the application and do not limit it. In the drawings:
FIG. 1 is a schematic diagram of a second order nonlinear correction circuit of a bandgap voltage reference circuit according to an embodiment of the application;
FIG. 2 is a schematic diagram of a primary compensated bandgap voltage reference circuit according to an embodiment of the present application;
FIG. 3 is a graph showing the temperature characteristic of the circuit of FIG. 2;
FIG. 4 is a graph showing the temperature characteristics of the circuit of FIG. 2 after calibration of the circuit of FIG. 1;
FIG. 5 is a schematic diagram of a bandgap voltage reference circuit according to an embodiment of the present application;
fig. 6 is a block diagram of a chip structure according to an embodiment of the present application.
Detailed Description
Embodiments of the present application will be described in more detail below with reference to the accompanying drawings. While certain embodiments of the present application are shown in the drawings, it is to be understood that the present application may be embodied in various forms and should not be construed as limited to the embodiments set forth herein, but rather are provided to provide a more thorough and complete understanding of the present application. It should be understood that the drawings and examples of the present application are for illustrative purposes only and are not intended to limit the scope of the present application.
It should be understood that the various steps recited in the method embodiments of the present application may be performed in a different order and/or performed in parallel. Furthermore, method embodiments may include additional steps and/or omit performing the illustrated steps. The scope of the present application is not limited in this respect.
The term "including" and variations thereof as used herein are intended to be open-ended, i.e., including, but not limited to. The term "based on" is based at least in part on. The term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one additional embodiment"; the term "some embodiments" means "at least some embodiments. Related definitions of other terms will be given in the description below.
It should be noted that the terms "first," "second," and the like herein are merely used for distinguishing between different devices, modules, units, or data and not for limiting the order or interdependence of the functions performed by such devices, modules, units, or data.
It should be noted that references to "one" or "a plurality" in this application are intended to be illustrative rather than limiting, and those of ordinary skill in the art will appreciate that "one or more" is intended to be interpreted as "one or more" unless the context clearly indicates otherwise. "plurality" is understood to mean two or more.
Hereinafter, embodiments of the present application will be described in detail with reference to the accompanying drawings.
Fig. 1 is a schematic diagram of a second-order nonlinear correction circuit according to an embodiment of the present application, where the second-order nonlinear correction circuit is used for performing second-order compensation on a first-order compensated bandgap voltage reference circuit in series with an input end of a feedback amplifier of the bandgap voltage reference circuit. Referring to fig. 1, the second-order nonlinear correction circuit includes: PNP transistor Q1, PNP transistor Q2, NPN transistor Q3, NPN transistor Q4, NPN transistor Q5, NPN transistor Q6, and NPN transistor Q7.
The base electrode of the PNP transistor Q1 is connected with the first input end X of the second-order nonlinear correction circuit; the collector of the PNP transistor Q1 is respectively connected with the collector of the NPN transistor Q3 and the base of the NPN transistor Q6; the emitter of PNP transistor Q1 is connected with power supply voltage V DD 。
The base electrode of the PNP transistor Q2 is connected with the second input end Y of the second-order nonlinear correction circuit; the collector of the PNP transistor Q2 is respectively connected with the collector of the NPN transistor Q4 and the base of the NPN transistor Q5; the emitter of PNP transistor Q2 is connected with the power supply voltage V DD 。
The PNP transistor Q1 and the PNP transistor Q2 constitute a common emitter differential pair.
The base electrode of the NPN transistor Q3 is connected with a BIAS voltage input end BIAS; the collector of the NPN transistor Q3 is respectively connected with the collector of the PNP transistor Q1 and the base of the NPN transistor Q6; the emitter of NPN transistor Q3 is grounded through resistor R1.
The base electrode of the NPN transistor Q4 is connected with a BIAS voltage input end BIAS; the collector of the NPN transistor Q4 is respectively connected with the collector of the PNP transistor Q2 and the base of the NPN transistor Q5; the emitter of NPN transistor Q4 is grounded through resistor R2.
The NPN transistor Q3 and NPN transistor Q4 constitute an active load. In a specific example, the resistances of the resistor R1 and the resistor R2 may each be 5kΩ.
The base of NPN transistor Q5 connects the collector of PNP transistor Q2 and collector of NPN transistor Q4; the collector of NPN transistor Q5 is connected with the first output end XC of the second-order nonlinear correction circuit and is connected with the power supply voltage V through a resistor R3 DD The method comprises the steps of carrying out a first treatment on the surface of the An emitter of NPN transistor Q5 is connected to an emitter of NPN transistor Q6 and to a collector of NPN transistor Q7, respectively.
The base of NPN transistor Q6 connects the collector of PNP transistor Q1 and collector of NPN transistor Q3; collector connection second-order non-circuit of NPN transistor Q6The second output end YC of the linear correction circuit is connected with the power supply voltage V through a resistor R4 DD 。
The NPN transistor Q5 and the NPN transistor Q6 constitute a level shift circuit. In a specific example, the resistances of the resistor R3 and the resistor R4 may each be 290kΩ.
The base electrode of the NPN transistor Q7 is connected with a BIAS voltage input end BIAS; the emitter of NPN transistor Q7 is grounded through resistor R5.
The NPN transistor Q7 serves as a load of the level shift circuit, and in a specific example, the resistance value of the resistor R5 may be 2.5kΩ.
In the embodiment of the application, the transfer function image of the second-order nonlinear correction circuit is a quadratic curve with an upward opening.
It should be noted that, since the triode is at the base current I B In the same case, collector current I C Increasing with increasing temperature; and similar to the forward characteristic of a diode, V BE Decreasing with increasing temperature. I C And V is equal to BE The relationship between them can be expressed as:
collector current I of bipolar transistor according to EM model of bipolar transistor C And V is equal to EB 、V CB The relationship of (2) can be expressed as:
wherein alpha is F As base transport factor, I F0 Is the saturation current of the diode in forward bias, I R0 Is the saturation current of the diode in reverse bias.
The nonlinear correction circuit in the above embodiment is connected in series to the input of the feedback amplifier, i.e. between the double arms of the bandgap reference circuit and the feedback amplifier. I PTAT Is a first order function of temperature, I VBE The main components of taylor expansion of (c) are the constant term and the primary and secondary terms of temperature. The inventionThe clear basic principle is to use the collector current I of a bipolar transistor C With base emitter voltage V BE In an exponential parabolic relationship, will I PTAT And I VBE The voltages generated at both ends of the resistor are added to the bases of the PNP transistors Q1 and Q2, and voltage signals obtained by exponentially transforming the collector samples of the PNP transistors Q1 and Q2 are output to the input end of the feedback amplifier, so that the quadratic term of the reference voltage source is compensated.
The present application is further explained below in conjunction with specific examples.
Fig. 2 is a schematic diagram of a primary compensated bandgap voltage reference circuit according to this specific example, and referring to fig. 2, the primary compensated bandgap voltage reference circuit includes a feedback amplifier a, a field effect transistor PM1, a field effect transistor PM2, a PNP transistor Q8, a PNP transistor Q9, a resistor R6, a resistor R7, and a resistor R8.
In the bandgap voltage reference circuit, the area ratio of the PNP transistor Q8 to the PNP transistor Q9 is 1:N, the resistance values of the resistor R6 and the resistor R7 are equal, and the voltages at the X and Y nodes are approximately equal due to the feedback of the feedback amplifier A, so that the voltages at the two ends of the resistor R6 and the resistor R7 are approximately equal. The field effect transistor PM1 and the field effect transistor PM2 are cascode such that the currents of the PNP transistor Q8 and the PNP transistor Q9 are approximately equal, and therefore, the emitter-base voltage V of the PNP transistor Q8 EB1 The relationship can be derived from:
emitter-base voltage V of PNP transistor Q9 EB2 The relationship can be derived from:
wherein Is the saturation current of the bipolar transistor; i is the current through PNP transistor Q8 and PNP transistor Q9, and I can be derived by the following relationship:
wherein V is T Is a thermal voltage.
The output reference voltage V REF The relationship can be derived from:
wherein V is T Has a positive temperature coefficient of about 0.087mV/K, V EB2 Has a negative temperature coefficient of about-1.5 mV/K. By determining R 7 /R 8 And a value of N such that
A zero temperature coefficient at room temperature can be obtained. In this example, V at room temperature T =25mV，V EB2 Reference voltage V of the one-time compensated bandgap voltage reference circuit shown in fig. 2 =0.7v REF About 1.13V. By the first-order compensation, the temperature characteristic of the band gap reference voltage can reach 50 ppm/DEG C.
However, in many cases the circuit requires a bandgap reference voltage with a lower temperature coefficient, for which purpose the reference voltage V can be used REF The Taylor function expansion is performed according to the temperature: v (V) REF =a+bT+cT 2 And + … …, further performing second-order temperature compensation on the reference voltage at a high-temperature end and a low-temperature end on the premise of reducing the influence of the first-order coefficient b through first-order compensation so as to reduce the influence of the second-order coefficient c, thereby greatly improving the temperature stability of the band-gap reference voltage.
FIG. 3 is a graph showing the temperature characteristic of the bandgap voltage reference circuit of FIG. 2, the bandgap voltage reference circuit having a temperature characteristic with a downward opening as shown in FIG. 3, and a reference voltage V extending from a temperature value corresponding to a point M in FIG. 2 to both high and low temperatures REF Is in a decreasing trend and is characterized mainly by quadratic terms.
Therefore, the quadratic curve opposite to the opening direction of the curve in fig. 3 can be generated by the second-order nonlinear correction circuit in the above embodiment to compensate the quadratic curve, so as to obtain a second-order compensated temperature characteristic curve, which is shown with reference to fig. 4. Therefore, the variation range of the band gap reference voltage in a wider temperature range is reduced, the temperature coefficient in the temperature range of-40-125 ℃ is reduced to 11 ppm/DEG C, and the reference voltage with high temperature stability is obtained, so that the band gap reference voltage can be applied to occasions requiring high-precision voltage reference.
In summary, according to the second-order nonlinear correction circuit of the embodiment of the application, the common emitter differential pair is formed by the PNP transistor Q1 and the PNP transistor Q2, the active load is formed by the NPN transistor Q3 and the NPN transistor Q4, the level shift circuit is formed by the NPN transistor Q5 and the NPN transistor Q6, and the load of the level shift circuit is formed by the NPN transistor Q7, so that the second-order nonlinear correction circuit is formed, the band gap voltage reference circuit with first-order compensation can be further compensated in a second order manner, the temperature coefficient in the temperature range of-40 to 125 ℃ is reduced to 11ppm/°c, meanwhile, the monte Carlo dispersibility of the output reference voltage is reduced, the requirement of a high-performance system on the voltage reference can be met, the whole circuit performance is improved, and the structure is simple and easy to realize.
Fig. 5 is a schematic diagram of a bandgap voltage reference circuit according to an embodiment of the application. Referring to fig. 5, a bandgap voltage reference circuit 100 includes the second order nonlinear correction circuit 10 in the above-described embodiment.
In this embodiment of the present application, the bandgap voltage reference circuit further includes: feedback amplifier a, field-effect transistor PM1, field-effect transistor PM2, PNP transistor Q8, PNP transistor Q9, resistor R6, resistor R7, and resistor R8.
The inverting input end of the feedback amplifier A is connected with the first output end XC of the second-order nonlinear correction circuit; the non-inverting input end of the feedback amplifier A is connected with the second output end YC of the second-order nonlinear correction circuit; the output end of the feedback amplifier A is respectively connected with the grid electrode of the field effect tube PM1 and the grid electrode of the field effect tube PM 2.
The source electrode of the field effect tube PM1 and the source electrode of the field effect tube PM2 are both connected with a power supply voltage; the drain electrode of the field effect transistor PM1 is respectively connected with the first input end X of the second-order nonlinear correction circuit and the emitter electrode of the PNP transistor Q8 through a resistor R6.
The drain electrode of the field effect tube PM2 is connected with the voltage output end of the band gap voltage reference circuit and is connected with the second input end Y of the second-order nonlinear correction circuit through a resistor R7.
The base and collector of PNP transistor Q8 are grounded.
The base and collector of the PNP transistor Q9 are grounded; an emitter of the PNP transistor Q9 is connected with a second input end of the second-order nonlinear correction circuit through a resistor R8.
It should be noted that, the explanation of the second-order nonlinear correction circuit in the above embodiment is also applicable to the bandgap voltage reference circuit in the present embodiment, and will not be repeated here.
According to the band gap voltage reference circuit, the common emitter differential pair is formed through the PNP transistor Q1 and the PNP transistor Q2, the active load is formed through the NPN transistor Q3 and the NPN transistor Q4, the level shift circuit is formed through the NPN transistor Q5 and the NPN transistor Q6, and the NPN transistor Q7 is used as the load of the level shift circuit, so that a second-order nonlinear correction circuit is formed, the band gap voltage reference circuit with first-order compensation can be subjected to second-order compensation, the temperature coefficient in the temperature range of-40-125 ℃ is reduced to 11 ppm/DEGC, meanwhile, the Monte Carlo dispersibility of the output reference voltage is reduced, the requirement of a high-performance system on the voltage reference can be met, the overall circuit performance is improved, and the band gap voltage reference circuit is simple in structure and easy to realize.
Fig. 6 is a block diagram of a chip structure according to an embodiment of the present application. Referring to fig. 6, a chip 1000 includes the bandgap voltage reference circuit 100 in the above-described embodiment.
Those of ordinary skill in the art will appreciate that: the foregoing description is only a preferred embodiment of the present application, and is not intended to limit the present application, but although the present application has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the technical solutions described in the foregoing embodiments, or that equivalents may be substituted for part of the technical features thereof. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application should be included in the protection scope of the present application.
Claims (6)
1. A second order nonlinear correction circuit of a bandgap voltage reference circuit, the second order nonlinear correction circuit comprising:
a base electrode of the PNP transistor Q1 is connected with the first input end of the second-order nonlinear correction circuit, a collector electrode of the PNP transistor Q1 is respectively connected with a collector electrode of the NPN transistor Q3 and a base electrode of the NPN transistor Q6, and an emitter electrode of the PNP transistor Q1 is connected with a power supply voltage;
a base electrode of the PNP transistor Q2 is connected with a second input end of the second-order nonlinear correction circuit, a collector electrode of the PNP transistor Q2 is respectively connected with a collector electrode of the NPN transistor Q4 and a base electrode of the NPN transistor Q5, and an emitter electrode of the PNP transistor Q2 is connected with the power supply voltage;
NPN transistor Q3, its base connects the bias voltage input, the emitter is grounded through the resistance R1;
the base electrode of the NPN transistor Q4 is connected with the bias voltage input end, and the emitter electrode of the NPN transistor Q is grounded through a resistor R2;
an NPN transistor Q5, the collector of which is connected with the first output end of the second-order nonlinear correction circuit and is connected with the power supply voltage through a resistor R3, and the emitter of which is respectively connected with the emitter of an NPN transistor Q6 and the collector of an NPN transistor Q7;
an NPN transistor Q6, the collector of which is connected with the second output end of the second-order nonlinear correction circuit and is connected with the power supply voltage through a resistor R4;
NPN transistor Q7, its base is connected to the bias voltage input, and the emitter is grounded through resistor R5.
2. The second order nonlinear correction circuit in accordance with claim 1, wherein the transfer function image of the second order nonlinear correction circuit is a conic with an upward opening.
3. The second-order nonlinear correction circuit according to claim 1, wherein the resistances of the resistor R1 and the resistor R2 are each 5kΩ; the resistance values of the resistor R3 and the resistor R4 are 290KΩ; the resistance value of the resistor R5 is 2.5KΩ.
4. A bandgap voltage reference circuit comprising the second order nonlinear correction circuit of the bandgap voltage reference circuit of claim 1.
5. The bandgap voltage reference circuit according to claim 4, wherein said bandgap voltage reference circuit further comprises:
the inverting input end of the feedback amplifier A is connected with the first output end of the second-order nonlinear correction circuit, the non-inverting input end of the feedback amplifier A is connected with the second output end of the second-order nonlinear correction circuit, and the output ends of the feedback amplifier A are respectively connected with the grid electrode of the field effect tube PM1 and the grid electrode of the field effect tube PM 2;
the source electrode of the field effect transistor PM1 is connected with the power supply voltage, and the drain electrode of the field effect transistor PM1 is respectively connected with the first input end of the second-order nonlinear correction circuit and the emitter electrode of the PNP transistor Q8 through a resistor R6;
the source electrode of the field effect tube PM2 is connected with the power supply voltage, the drain electrode of the field effect tube PM2 is connected with the voltage output end of the band gap voltage reference circuit, and the field effect tube PM2 is connected with the second input end of the second-order nonlinear correction circuit through a resistor R7;
a PNP transistor Q8, the base and collector of which are grounded;
PNP transistor Q9, its base and collector are grounded, and the emitter is connected to the second input terminal of the second-order nonlinear correction circuit through resistor R8.
6. A chip comprising the bandgap voltage reference circuit of claim 4.
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