CN109407747A - A kind of band-gap reference circuit of the high PSRR of second-order temperature compensation - Google Patents
A kind of band-gap reference circuit of the high PSRR of second-order temperature compensation Download PDFInfo
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- CN109407747A CN109407747A CN201811557905.3A CN201811557905A CN109407747A CN 109407747 A CN109407747 A CN 109407747A CN 201811557905 A CN201811557905 A CN 201811557905A CN 109407747 A CN109407747 A CN 109407747A
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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Abstract
The present invention discloses a kind of band-gap reference circuit of the high PSRR of second-order temperature compensation, including PTC circuit, negative temperature parameter circuit and second-order temperature compensation circuit；The PTC circuit includes: PMOS tube M1a, PMOS tube M1b, PMOS tube M2a, PMOS tube M2b, PMOS tube M3a, PMOS tube M3b, PMOS tube M8a, PMOS tube M8b, NMOS tube M4, NMOS tube M5, NMOS tube M6.Stating negative temperature parameter circuit includes: PMOS tube M7a, PMOS tube M7b, PMOS tube M9a, PMOS tube M9b, NPN type triode Q3.The output end D point of second order compensation circuit is connect with the output end of the band gap reference Jing Guo single order temperature-compensating, and the form that the electric current with second-order temperature coefficient is converted into voltage output compensates the second order negative temperature item of output voltage；Simultaneously using the structure of full mos pipe, Cmos technique complete in this way can be to avoid the difference of technology room.Cascode structure current mirror improves the power supply rejection ratio (PSRR) of outputting reference voltage simultaneously.
Description
Technical field
The present invention relates to a kind of compensation of second-order temperature, the band-gap reference circuit of high PSRR
Background technique
As high-precision ADC, DAC converter and the basic module in telecommunication circuit, it is band-gap reference circuit
Other circuit modules provide accurately voltage source or a current source.Band gap reference is unit important in integrated circuit always
Module, its temperature characterisitic and anti-noise jamming ability is to influence the key factor of integrated circuit precision and performance.Traditional
Band-gap reference circuit generates the reference voltage that temperature coefficient is 50ppm/ DEG C or so within the temperature range of 0~70 DEG C.
In recent years, a variety of different high-order compensation technologies are proposed both at home and abroad to improve the temperature characterisitic of reference circuit, mesh
The high-order compensation technology of preceding appearance includes: exponential curve compensation technique, section linear compensating technology, the high-order temperature based on resistance
Characteristic compensation method etc. makes base for example, YingCao etc., which is proposed, carries out high-order compensation using dynamic basis leakage compensation technology
Quasi- voltage temperature coefficient within the scope of -40~125 DEG C reaches 15ppm/ DEG C；GongXiao-feng etc. utilizes different resistance materials
Material progress is high-order temperature compensated, and the range of temperature of circuit is big, but the temperature coefficient generated is very high；LeilaKoushaeian
Deng reducing temperature coefficient using current mirror and operational amplifier, temperature coefficient is 4.7ppm/ DEG C；
As the supply voltage of contemporary integrated circuits constantly declines and the continuous improvement of each performance indicator, previous frequency is mended
Compensation structure and the demand for being unable to satisfy design, at the same common two stage amplifer circuit due to power supply rejection ratio it is poor, gain
Not enough also it is difficult to meet the needs designed instantly greatly.Simultaneously due also to needing to improve the signal-to-noise ratio of circuit, power supply rejection ratio, increase
Bandwidth obtains the working region of high-gain, high stable, and new compensation technique and new circuit framework are here on this basis
Key component.Traditional frequency compensation is single capacitor miller compensation technology, separates two poles.And new benefit on this basis
Continuing to bring out for the new compensation technique of technology is repaid, the miller compensation of zero point is such as controlled, pole is compensated by control zero point；Increase
Add source follower to eliminate zero point etc..On the other hand traditional two stage amplifer circuit due to the present gain of performance it is not big enough；Together
When the finite bandwidth due to caused by the higher order pole being unable to control in circuit；And due to caused by traditional miller compensation
The reduction of power supply rejection ratio.
Traditional band-gap reference circuit is as shown in Figure 1, the basic principle of its temperature-compensating is to possess opposite thermal for two
The voltage of coefficient is added with suitable weight, and final obtain has temperature independent reference voltage.Traditional reference voltage source
The shortcomings that be: since transistor VBE and temperature are not linear relationships, except single order item is there are also high-order nonlinear item, and traditional
Band-gap reference only compensates the single order item of VBE, and the VBE higher order term of negative temperature dependency is not compensated, from
And cause the temperature characterisitic of circuit poor.
It mostly uses operational amplifier to go to realize the high-order compensation method occurred at present, or only compensates for VBE's
Single order and part higher order term, performance of operational amplifier itself can be reduced with the variation of temperature.Simultaneously because operation amplifier
The offset voltage that device generates brings very big influence to the output voltage of band-gap reference, and therefore, temperature coefficient cannot still drop to very
It is low.
Summary of the invention
In order to solve the shortcomings of the prior art, the object of the present invention is to provide a kind of high power supplys of second-order temperature compensation
Inhibit the band-gap reference circuit of ratio.The circuit using the second-order temperature standard of compensation circuit of full mos pipe by with positive single order and
Second-order temperature coefficient compensates the negative temperature coefficient of VBE, while cascode structure current mirror improves outputting reference electricity
The power supply rejection ratio (PSRR) of pressure.
In order to realize above-mentioned object of experiment, the technical solution adopted by the present invention is that: a kind of height electricity of second-order temperature compensation
Source inhibits the band-gap reference circuit of ratio to contain: PTC circuit, second-order temperature compensation circuit, negative temperature parameter circuit.
The beneficial outcomes of the invention patent: firstly, the output end D point of second order compensation circuit and process single order temperature-compensating
The output end of band gap reference connects, and converts the form of voltage output to output electricity for the electric current with second-order temperature coefficient
The second order negative temperature item of pressure compensates；Simultaneously using the structure of full mos pipe, Cmos technique complete in this way can be to avoid technology room
Difference.Cascode structure current mirror improves the power supply rejection ratio (PSRR) of outputting reference voltage simultaneously.
Detailed description of the invention
Present invention will be further explained below with reference to the attached drawings and examples.
Fig. 1 is the band-gap reference circuit structural schematic diagram of the prior art；
Fig. 2 is structural schematic diagram of the invention；
Specific embodiment
As shown in Fig. 2, a kind of band-gap reference circuit of no amplifier high-order temperature drift compensation, including it is PTC circuit, negative
Temperature coefficient circuit and second-order temperature compensation circuit, PTC circuit vary with temperature positively related electric current for generating,
Negative temperature parameter circuit, which is used to generate, varies with temperature negatively correlated negative temperature parameter current, and second-order temperature standard of compensation circuit will
The negative temperature coefficient of VBE is compensated with positive single order and second-order temperature coefficient；The PTC circuit includes:
PMOS tube M1a, PMOS tube M1b, PMOS tube M2a, PMOS tube M2b, PMOS tube M3a, PMOS tube M3b, PMOS tube M8a, PMOS tube
M8b, NMOS tube M4, NMOS tube M5, NMOS tube M6, biasing resistor R1, divider resistance R2, NPN type triode Q1, three pole of NPN type
Pipe Q2, PMOS tube M1a, PMOS tube M2a, PMOS tube M3a, source electrode is connected and connect with VDD in PMOS tube M8a, grid it is connected and
Connect with the drain electrode of PMOS tube M1b, PMOS tube M1a, PMOS tube M2a, PMOS tube M3a, the drain electrode in PMOS tube M8a successively with
PMOS tube M1b, PMOS tube M2b, PMOS tube M3b, the source electrode connection in PMOS tube M8b, the drain electrode of PMOS tube M1b pass through biased electrical
Resistance R1 is connect with the drain electrode of NMOS tube M4, PMOS tube M1b, PMOS tube M2b, PMOS tube M3b, all grids in PMOS tube M8b
It is connected and the grid is connect with the drain electrode of NMOS tube M4, the drain electrode of PMOS tube M2b and the grid of NMOS tube M4 and NMOS tube M5's
Drain electrode connection, NMOS tube M5 are connected with the grid in NMOS tube M6, the drain electrode of PMOS tube M3b and grid and leakage in NMOS tube M6
Extremely it is connected, NMOS tube M4 is connected with source electrode in NMOS tube M6 and the base stage in the source electrode and NPN type triode Q2 and collector connect
It connects, the emitter in N-type triode Q2 passes through divider resistance R2 connection publicly GND, the source electrode and N-type triode of NMOS tube M5
Base stage in Q1 is connected with collector, and the emitter in N-type triode Q1 connects publicly GND.
It include branch's biasing circuit in PTC circuit, the biasing circuit is by forming cascode structure
Bias PMOS pipe M1a/M1b, biasing resistor R1 and biasing NMOS tube M4 constitute.Bias PMOS pipe M1a/M1b and cascade
Current mirror PMOS tube M2a/M2b, M3a/M3b is in parallel, i.e., grid is corresponding is connected；Biasing resistor R1 provides for PMOS tube M1a/M1b
Bias grid voltage；The biasing grid voltage of NMOS tube M4 is provided by the drain electrode of middle branch PMOS tube M2b, while this biasing circuit is positive
Temperature coefficient circuit provides negative-feedback, makes A2, B2 point voltage is more stable.In A2, under B2 point voltage is equal, by divider resistance R2
Effect, the base emitter voltage VBE-Q1 and triode Q2 base emitter voltage VBE-Q2 of triode Q1 generate voltage
Poor △ VBE.△ VBE is known by the feature of transistor and absolute temperature is proportional, and then generates positive temperature coefficient electric current △ VBE/R2.
Under the action of cascade pipe, A1, B1 point voltage and A2, B2 point voltage difference are approximately equal, reduce channel length in this way
The influence of mudulation effect reduces outputting reference electric current with the influence of mains voltage variations, that is, improves outputting reference electric current
Power supply rejection ratio (PSRR).
The second-order temperature compensation circuit: Pmos pipe M10a, M11a, M12a, M13a, M14a；Nmos pipe M7, M8, M9,
M10,M11；The output end D point of the second order compensation circuit and the output end of the band gap reference Jing Guo single order temperature-compensating connect
It connects, and the form that the electric current with second-order temperature coefficient is converted into voltage output carries out the second order negative temperature item of output voltage
Compensation；Simultaneously using the structure of full mos pipe, Cmos technique complete in this way can be to avoid the difference of technology room.
Claims (3)
1. a kind of band-gap reference circuit of the high PSRR of second-order temperature compensation, it is characterised in that: including positive temperature coefficient
Circuit, negative temperature parameter circuit and second-order temperature compensation circuit, PTC circuit vary with temperature positive correlation for generating
Electric current, negative temperature parameter circuit, which is used to generate, varies with temperature negatively correlated negative temperature parameter current, second-order temperature compensation base
Quasi- circuit will compensate the negative temperature coefficient of VBE with positive single order and second-order temperature coefficient；The positive temperature coefficient electricity
Road include: PMOS tube M1a, PMOS tube M1b, PMOS tube M2a, PMOS tube M2b, PMOS tube M3a, PMOS tube M3b, PMOS tube M8a,
PMOS tube M8b, NMOS tube M4, NMOS tube M5, NMOS tube M6, biasing resistor R1, divider resistance R2, NPN type triode Q1, NPN
Type triode Q2, PMOS tube M1a, PMOS tube M2a, PMOS tube M3a, source electrode is connected and connect with VDD, grid in PMOS tube M8a
Be connected and connect with the drain electrode of PMOS tube M1b, PMOS tube M1a, PMOS tube M2a, PMOS tube M3a, the drain electrode in PMOS tube M8a according to
The secondary source electrode with PMOS tube M1b, PMOS tube M2b, PMOS tube M3b, PMOS tube M8b is connect, and the drain electrode of PMOS tube M1b passes through inclined
Resistance R1 is set to connect with the drain electrode of NMOS tube M4, it is PMOS tube M1b, PMOS tube M2b, PMOS tube M3b, all in PMOS tube M8b
Grid is connected and the grid is connect with the drain electrode of NMOS tube M4, the drain electrode of PMOS tube M2b and the grid and NMOS tube of NMOS tube M4
The drain electrode of M5 connects, and NMOS tube M5 is connected with the grid in NMOS tube M6, the drain electrode of PMOS tube M3b and the grid in NMOS tube M6
It is connected with drain electrode, NMOS tube M4 is connected with source electrode in NMOS tube M6 and base stage and current collection in the source electrode and NPN type triode Q2
Pole connects, and the emitter in N-type triode Q2 passes through divider resistance R2 connection publicly GND, the source electrode and N-type three of NMOS tube M5
Base stage in pole pipe Q1 is connected with collector, and the emitter in N-type triode Q1 connects publicly GND.
2. a kind of band-gap reference circuit of the high PSRR of second-order temperature compensation according to claim 1, feature
Be: the negative temperature parameter circuit includes: PMOS tube M7a, PMOS tube M7b, PMOS tube M9a, PMOS tube M9b, three pole of NPN type
Source electrode in pipe Q3, resistance R3, resistance R4, the PMOS tube M7a, PMOS tube M9a is connected and connect with VDD, and grid is also connected
And connect with the drain electrode of PMOS tube M7b, the drain electrode of PMOS tube M7b is connect with one end of resistance R4, the other end connection of resistance R4
PMOS tube M7b, the grid in PMOS tube M9b and base stage and collector in NPN type triode Q3, in NPN type triode Q3
Emitter publicly GND is connect by resistance R3.
3. a kind of band-gap reference circuit of the high PSRR of second-order temperature compensation according to claim 2, feature
It is second-order temperature compensation circuit: Pmos pipe M10a, M11a, M12a, M13a, M14a；Nmos pipe M7, M8, M9, M10, M11；Institute
The output end D point for the second order compensation circuit stated is connect with the output end of the band gap reference Jing Guo single order temperature-compensating, and will tool
The form for having the electric current of second-order temperature coefficient to be converted into voltage output compensates the second order negative temperature item of output voltage；Simultaneously
Using the structure of full mos pipe, Cmos technique complete in this way can be to avoid the difference of technology room.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811557905.3A CN109407747A (en) | 2018-12-19 | 2018-12-19 | A kind of band-gap reference circuit of the high PSRR of second-order temperature compensation |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811557905.3A CN109407747A (en) | 2018-12-19 | 2018-12-19 | A kind of band-gap reference circuit of the high PSRR of second-order temperature compensation |
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| CN109407747A true CN109407747A (en) | 2019-03-01 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111796625A (en) * | 2020-07-27 | 2020-10-20 | 东南大学 | Ultra-low power consumption CMOS voltage reference circuit |
| CN114237339A (en) * | 2021-12-01 | 2022-03-25 | 重庆吉芯科技有限公司 | Band-gap reference voltage circuit and compensation method of band-gap reference voltage |
| CN115145346A (en) * | 2022-08-02 | 2022-10-04 | 深圳市诚芯微科技股份有限公司 | Band gap reference circuit |
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| CN105786077A (en) * | 2016-04-20 | 2016-07-20 | 广东工业大学 | High-order temperature drift compensation band-gap reference circuit without operational amplifier |
| CN108563281A (en) * | 2017-05-09 | 2018-09-21 | 长泰品原电子科技有限公司 | A method of forming compensation circuit on reference voltage circuit |
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| US7420359B1 (en) * | 2006-03-17 | 2008-09-02 | Linear Technology Corporation | Bandgap curvature correction and post-package trim implemented therewith |
| CN102323842A (en) * | 2011-05-13 | 2012-01-18 | 电子科技大学 | Band-gap voltage reference source for high-order temperature compensation |
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| CN111796625A (en) * | 2020-07-27 | 2020-10-20 | 东南大学 | Ultra-low power consumption CMOS voltage reference circuit |
| CN111796625B (en) * | 2020-07-27 | 2021-12-31 | 东南大学 | Ultra-low power consumption CMOS voltage reference circuit |
| CN114237339A (en) * | 2021-12-01 | 2022-03-25 | 重庆吉芯科技有限公司 | Band-gap reference voltage circuit and compensation method of band-gap reference voltage |
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Application publication date: 20190301 |