CN115145346A - Band gap reference circuit - Google Patents
Band gap reference circuit Download PDFInfo
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- CN115145346A CN115145346A CN202210922851.6A CN202210922851A CN115145346A CN 115145346 A CN115145346 A CN 115145346A CN 202210922851 A CN202210922851 A CN 202210922851A CN 115145346 A CN115145346 A CN 115145346A
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- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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Abstract
The application relates to a band gap reference circuit, it relates to the integrated circuit field, a band gap reference circuit includes: the starting circuit, the core circuit and the compensation circuit are connected in sequence; the starting circuit is used for starting the core circuit to enter a stable working state when the core circuit is conducted; the feedback of the core circuit after entering a stable working state is utilized to close the output of the starting circuit; the core circuit is used for entering a stable working state according to the output of the starting circuit and generating a reference voltage output with low temperature drift; the compensation circuit is used for outputting compensation current or voltage to the core circuit according to the detected current or voltage which is influenced by the temperature inside the core circuit, so that the reference voltage output by the core circuit is influenced by the temperature and is smaller than a first threshold value. The method and the device have the technical effect that the output reference voltage is less influenced by temperature.
Description
Technical Field
The present application relates to the field of integrated circuits, and more particularly, to a bandgap reference circuit.
Background
At present, in an integrated circuit, all parameter indexes are influenced by processes, temperatures and the like, and a good band gap reference circuit can ensure the parameter precision of a chip. The band-gap reference circuit in the prior art is generally obtained by adding a voltage with a positive temperature characteristic and a voltage with a negative temperature characteristic, and the temperature characteristic of the reference can be designed to be better through reasonable combination.
As shown in fig. 1, a typical prior art bandgap reference circuit has a start-up circuit on the left and a bandgap reference core circuit on the right. When the power is on, the pull-down of the resistor R1 pulls down the grid terminals of the field-effect tube P1 and the field-effect tube P2, the current mirror formed by the field-effect tube P1 and the field-effect tube P2 can be conducted, one path of current flows out from the field-effect tube P2 to the core circuit, the degeneracy state of the core circuit is broken, then the pull-up current is generated in the field-effect tube P9, the voltage of the grid terminals of the field-effect tube P1 and the field-effect tube P2 is pulled up, and meanwhile, the starting circuit is turned off. In the core circuit, field effect transistors P3-P6 and a resistor R2 form a low-dropout current mirror, field effect transistors N1-N4 and a resistor R3 form the low-dropout current mirror, and the mirror proportion of two groups of current mirrors is assumed to be 1:1, the two paths of current are equal and are marked as I1. The EB junction voltage of the bipolar transistor Q2 is equal to the sum of the EB junction voltage of the bipolar transistor Q1 and the voltage drop of the resistor R3, and the area ratio of the bipolar transistor Q1 to the bipolar transistor Q2 is n:1, then there are:
VBE2＝VBE1+I1×R3 (1)
from equation (3), the current I1 is proportional to the temperature.
Suppose the mirror ratio of FET P7/P8 to FET P3/P4 is 1:1, the reference Vref can be expressed as:
according to the formula (4), vref is obtained by combining the voltage of the positive temperature coefficient and VBE3 of the negative temperature coefficient, relevant parameters are reasonably adjusted, and Vref can be adjusted to be close to zero temperature characteristics as much as possible.
Fig. 2 is a temperature characteristic curve of a reference voltage Vref of a bandgap reference circuit in the prior art, and since parameters such as electron mobility of a semiconductor and a positive voltage of a BE junction do not exhibit absolute positive or negative temperature characteristics with temperature, the bandgap reference voltage Vref in the prior art generally exhibits a parabolic shape with a downward opening. According to the test experience of a large number of products, the band-gap reference circuit in the prior art can only control the temperature coefficient of Vref to be between 20ppm and 100ppm, and although the band-gap reference circuit can meet most applications, the band-gap reference circuit obviously cannot meet the application of some high-precision requirements, and a band-gap reference circuit with lower temperature drift is urgently needed.
Disclosure of Invention
In order to carry out high-order temperature compensation on reference voltage, greatly reduce the variation of the reference voltage or current along with temperature and realize the design target of low temperature drift, the application provides a band gap reference circuit.
The application provides a band gap reference circuit adopts following technical scheme:
there is provided a bandgap reference circuit comprising: the starting circuit, the core circuit and the compensation circuit are connected in sequence;
the starting circuit is used for starting the core circuit to enter a stable working state when the core circuit is conductive; the feedback of the core circuit after entering a stable working state is utilized to close the output of the starting circuit;
the core circuit is used for entering a stable working state according to the output of the starting circuit and generating a reference voltage output with low temperature drift; the compensation circuit is used for outputting compensation current or voltage to the core circuit according to the detected current or voltage which is influenced by the temperature in the core circuit, so that the reference voltage of the low temperature drift output by the core circuit is influenced by the temperature and is smaller than a first threshold value.
Preferably, the compensation circuit includes: the temperature detection circuit and the high-order compensation circuit are connected in sequence;
the temperature detection circuit is used for determining the type of current or voltage which needs to be compensated and is output by the core circuit according to the current or voltage which is influenced by the temperature in the core circuit;
and the high-order compensation circuit is used for compensating the output current or voltage of the core circuit according to the type of the current or voltage which is output by the temperature detection circuit and needs to be compensated.
Preferably, the temperature detection circuit includes: the first mirror image current branch circuit and the temperature control module are connected in series; the selection module is connected between the output end of the temperature control module and the high-order compensation circuit in series;
the first mirror current branch circuit is used for generating a second current which is consistent with the first current in the core circuit in size; the first current sequentially flows through a first component with positive temperature characteristic and a second component with negative temperature characteristic in the core circuit, so that the reference voltage output by the core circuit is influenced by the temperature and is smaller than a second threshold value;
the temperature control module is: the selection module is used for outputting a control signal which changes along with the temperature to the selection module when the second current changes along with the temperature;
the selection module: and the selection signal is used for calculating and outputting a selection signal which determines the type of the current or the voltage output by the high-order compensation circuit to the high-order compensation circuit according to the received control signal.
Preferably, the first mirror current branch includes: at least one first semiconductor device having a current positive temperature characteristic or a current negative temperature characteristic; the current temperature characteristic of the first semiconductor device is consistent with the current temperature characteristic of a second semiconductor of a second mirror current branch in a core circuit through which the first current flows.
Preferably, the temperature control module includes: the first resistor R1 and the switch module are connected in parallel; when the second current flowing through the first resistor R1 is smaller than a third threshold or larger than the third threshold, the switch module outputs a different control signal to the selection module.
Preferably, the selection module includes: at least two inverters; and any one of the at least two inverters selects the high-order compensation circuit to output a compensation current or a compensation voltage according to the control signal output by the temperature control module.
Preferably, the higher-order compensation circuit includes:
the third mirror current branch circuit is used for outputting a third current with positive temperature characteristic to the core circuit under the condition that the temperature detection circuit is controlled to be conducted; the third current is consistent with a first current temperature coefficient inside the core circuit; the first current flows through a first component with positive temperature characteristic and a second component with negative temperature characteristic in the core circuit, so that the reference voltage output by the core circuit is influenced by temperature and is smaller than a second threshold value;
the negative temperature characteristic current source is used for outputting a fourth current with negative temperature characteristic to the core circuit under the condition that the temperature detection circuit is controlled to be conducted;
and under the control of the temperature detection circuit, only one of the third current of the third mirror current branch and the fourth current of the negative temperature characteristic current source is output to the core circuit at the same time.
Preferably, the negative temperature characteristic current source includes:
negative temperature characteristic reference current source: a fifth current for generating a negative temperature characteristic; the temperature coefficient of the fifth current is consistent with that of the fourth current;
a first current mirror: the circuit is provided with a fourth mirror current branch and a fifth mirror current branch; the first current mirror is used for taking the output of the fourth mirror current branch as the output of the negative temperature characteristic current source; and the fifth mirror current branch is connected with the negative temperature characteristic reference current source.
Preferably, the negative temperature characteristic reference current source includes: a third semiconductor device with negative temperature characteristic of voltage, and a second resistor R2 connected in parallel with the third semiconductor device; the fifth current generated on the second resistor R2 is the reference current of the first current mirror.
Preferably, the first semiconductor, the second semiconductor or the third semiconductor is: a field effect transistor or a bipolar transistor.
In summary, the present application includes at least one of the following beneficial technical effects:
1. the output reference voltage is less influenced by temperature;
2. the output compensation current precision of the high-order current compensation circuit is more accurate.
Drawings
Fig. 1 is a prior art bandgap reference circuit diagram.
Fig. 2 is a graph of the temperature characteristic of a reference voltage Vref of a prior art bandgap reference circuit.
FIG. 3 is a logic block diagram of a bandgap reference circuit provided by the present invention;
FIG. 4 is a graph of the current versus temperature characteristic of the present invention requiring compensation;
fig. 5 is a diagram of an embodiment of a bandgap reference circuit provided in the present invention.
Description of the reference numerals:
1. a start-up circuit; 2. a core circuit;
3. a compensation circuit;
31. a temperature detection circuit; 32. a high-order compensation circuit;
311. a first mirror current branch; 312. a temperature control module;
313. a selection module;
321. a third mirror current branch; 322. a negative temperature characteristic current source;
3221. a negative temperature characteristic reference current source; 3222. a first current mirror.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is further described in detail below with reference to fig. 1-4 and the embodiments. It should be understood that the specific embodiments described herein are merely illustrative of and not restrictive on the broad application.
Interpretation of terms:
band gap reference: english (band voltage reference), it is often simply referred to as band. The most classical bandgap reference is a temperature independent voltage reference, which is about 1.25V, using the sum of a voltage with positive temperature characteristics and a voltage with negative temperature characteristics, and the temperature coefficients of the two are mutually offset. It is called a bandgap reference because its reference voltage is not much different from the bandgap voltage of silicon.
The application provides a band gap reference circuit adopts following technical scheme:
as shown in fig. 3 and 4, there is provided a bandgap reference circuit, including: the starting circuit 1, the core circuit 2 and the compensation circuit 3 are connected in sequence;
the starting circuit 1 is used for starting the core circuit 2 to enter a stable working state when conducting electricity; and the feedback after the core circuit 2 enters the stable working state is utilized to close the output of the starting circuit; the startup circuit 1 functions only when the core circuit 2 is started up, and is in an off state after the core circuit 2 is started up.
The core circuit 2 is used for entering a stable working state according to the output of the starting circuit 1 and generating a low-temperature-drift reference voltage output;
the compensation circuit 3 is configured to output a compensation current or voltage to the core circuit 2 according to the detected current or voltage inside the core circuit, which is affected by the temperature, so that the reference voltage of the low temperature drift output by the core circuit 2 is affected by the temperature and is smaller than a first threshold. In the prior art, if the compensation circuit 3 is not provided, the band gap reference voltage output range is as follows: 1.25V. + -. 10mV. In view of the fact that the reference temperature characteristic of the prior art is in a downward opening parabola shape, as shown in fig. 2, at low temperature and high temperature, the reference voltage is lower, and at a certain temperature in the middle, the reference voltage is highest; the prior art benchmark parabola apex temperature is typically between 40 and 60 ℃. In order to make up the fact that the reference temperature characteristic in the prior art is in a parabolic shape with a downward opening, so that the core circuit 2 can output the reference voltage with a difference smaller than a first threshold value at a lower temperature and a higher temperature, wherein the range of the first threshold value is smaller than +/-10 mV; obviously, the compensation circuit 3 is required to compensate more current or voltage at a position far away from the vertex of the parabola and compensate less current or voltage at a position close to the vertex of the parabola; in this way, it is possible to obtain a characteristic that the current or voltage outputted from the core circuit 2 exhibits a value varying with temperature smaller than a certain value in a temperature range as wide as possible, i.e., it is necessary to compensate as shown in fig. 4. The compensation current is Icomp and changes along with the temperature; when the temperature increases and exceeds a certain temperature critical point, the compensation current is Iptat, which belongs to the positive temperature characteristic of current, namely, the current increases along with the temperature increase; when the temperature is less than a certain temperature critical point, the compensation current is Intat, which belongs to the current negative temperature characteristic, that is, the current decreases with the increase of the temperature. It is obvious that the combination of fig. 2 and fig. 4 can counteract the technical problem of the output reference voltage varying with temperature in fig. 2. The temperature change does not influence the stability of the output reference voltage within the temperature range of 40-60 ℃.
Preferably, as shown in fig. 5, the compensation circuit 3 includes: a temperature detection circuit 31 and a high-order compensation circuit 32 connected in sequence;
the temperature detection circuit 31 is configured to determine the type of current or voltage that needs to be compensated for the output of the core circuit according to the current or voltage inside the core circuit 2 and affected by the temperature; all the reference voltages output by the core circuit 2 have the condition that the output changes along with the change of the temperature, namely the condition that the physical characteristics of the devices in the core circuit 2 change along with the change of the temperature; so-called current positive temperature characteristic, that is, when the temperature increases, the current also increases; when the temperature is reduced, the current is also reduced; so-called current negative temperature characteristic, that is, when the temperature increases, the current decreases; as the temperature decreases, the current increases. So-called positive voltage temperature characteristic, i.e., when the temperature increases, the voltage increases; when the temperature is reduced, the voltage is also reduced; the negative temperature characteristic of voltage is that when the temperature increases, the voltage decreases, and when the temperature decreases, the voltage increases. The devices in the core circuit 2 are selected to be a combination of devices with positive temperature characteristics and devices with negative temperature characteristics, so that the fluctuation of the reference voltage output along with the temperature change is reduced. Therefore, the temperature detection circuit 31 does not directly detect the temperature of the circuit, but detects the temperature-dependent current or voltage output by the temperature-dependent device in the core circuit 2, thereby achieving the purpose of detecting the electrical temperature change. In the prior art, in an integrated circuit, various physical characteristics of devices have high stability; however, the problem of device variation with temperature variation still remains. Therefore, when the input power supply is stable, the influence of the temperature on the integrated circuit becomes the largest factor in influencing each output parameter of the device. Therefore, by appropriately combining a device having a positive temperature characteristic and a device having a negative temperature characteristic, it is possible to satisfactorily solve the problem of unstable output due to the physical characteristics of the devices.
The high-order compensation circuit 32 is configured to compensate the output current or voltage of the core circuit 2 according to the type of the current or voltage that needs to be compensated and is output by the temperature detection circuit 31. The higher-order compensation circuit 32 is a device for performing current or voltage compensation as described above. The higher-order compensation circuit itself also has a temperature characteristic, but this is just a physical characteristic that can be utilized to compensate for the instability of the output of the core circuit 2.
Preferably, as shown in fig. 5, the temperature detection circuit 31 includes: a first mirror current branch 311 and a temperature control module 312 which are connected in series; and a selection module 313 connected in series between the output of the temperature control module 312 and the high-order compensation circuit 32; the first mirror current branch 311 is configured to generate a second current that is consistent with a first current inside the core circuit 2; the first current sequentially flows through a first component generating positive temperature characteristic and a second component generating negative temperature characteristic in the core circuit 2, so that the reference voltage output by the core circuit 2 is influenced by temperature and is smaller than a second threshold value; the second threshold size is approximately: +/-10 mV; in this embodiment, the first mirror current branch 311 includes: field effect transistors P10, P11; since the two field-effect transistors P10 and P11 and the field-effect transistors P3 and P4 in the core circuit 2 constitute a current mirror, when the mirror currents of the field-effect transistors P3 and P4 in the core circuit 2 change, the currents output from the field-effect transistors P10 and P11 also change similarly. Further, since the field effect transistors P10 and P11 and the field effect transistors P3 and P4 have the same physical characteristics, the current of the first mirror current branch 311 increases due to an increase in the current caused by a temperature increase in the core circuit 2. The drain electrode output of the field effect transistor P11 is connected to the ground through a first resistor R1, the source electrode of the field effect transistor P10 is connected to a power supply VDD, and the drain electrode of the field effect transistor P10 is connected with the source electrode of the field effect transistor P11; the gate of the field effect transistor P10 and the gate of the field effect transistor P11 are connected to the inside of the core circuit 2, respectively, and constitute a current mirror together with the field effect transistors P3 and P4. The first components are field effect transistors P7 and P8 and have current positive temperature characteristics; the second component is a resistor R4 and a bipolar transistor Q3 which are connected in series, and has the current negative temperature characteristic; the drain electrode of the field effect transistor P8 is connected with one end of the resistor R4; the resistor R4 is connected with an emitter of the bipolar transistor Q3; and the base electrode and the collector electrode of the bipolar transistor Q3 are grounded. Obviously, the first component and the second component through which the first current flows have different current temperature characteristics, so that the reference voltage Vref can output smaller voltage fluctuation in a larger temperature range.
The temperature control module 312: a control signal for outputting a temperature-dependent control signal to the selection module 313 when the second current varies with temperature;
the selection module 313: and is configured to calculate and output a selection signal determining a type of the current or the voltage output by the higher-order compensation circuit 32 to the higher-order compensation circuit 32 according to the received control signal. When the temperature changes, the second current will change, and the high-order compensation circuit 32 is required to compensate different types of voltages or currents to the core circuit 2. The selection module 313 selects a different compensation current or compensation voltage to the core circuit 2.
Preferably, as shown in fig. 5, the first mirror current branch 311 includes: at least one first semiconductor device having a current positive temperature characteristic or a current negative temperature characteristic; the current temperature characteristic of the first semiconductor device is kept consistent with the current temperature characteristic of the second semiconductor of the second mirror current branch 211 in the core circuit 2 through which the first current flows.
Preferably, as shown in fig. 5, the temperature control module 312 includes: the first resistor R1 and the switch module are connected in parallel; when the second current flowing through the first resistor R1 is smaller than a third threshold or larger than the third threshold, the switch module outputs a different control signal to the selection module 313. The size of the third threshold is determined according to the resistance of the first resistor R1 of the actual circuit and the conduction voltage of the EB junction of the transistor Q4. In this embodiment, the switch module determines whether the switch Q4 is turned on by comparing the voltage drop generated across the resistor R1 with the turn-on threshold of the switch Q4. The first current is generated by a field effect transistor P11 with current positive temperature characteristic and flows through a first resistor R1; the voltage of the first resistor R1 is applied between the base electrode and the emitter electrode of the triode Q4. At low temperature, the voltage drop across the first resistor R1 is low, the conduction voltage of the BE junction of the triode Q4 is high, and the triode Q4 is not conductive, so that the collector of the triode Q4 outputs high level, that is, the temperature control module 312 outputs high level; at high temperature, the voltage drop across the first resistor R1 is large, the BE conduction voltage of the transistor Q4 is low, and the transistor Q4 is turned on, so that the collector of the transistor Q4 outputs a low level, that is, the temperature control module 312 outputs a low level.
Preferably, as shown in fig. 5, the selecting module 313 includes: at least two inverters; any one of the at least two inverters selects the high-order compensation circuit 32 to output a compensation current or a compensation voltage according to the control signal output by the temperature control module 312. In the present embodiment, the selection module 313 includes two inverters. When the temperature control module 312 outputs a low level, the first inverter INV1 outputs a high level, and the second inverter INV2 outputs a low level; when the temperature control module 312 outputs a high level, the first inverter INV1 outputs a low level, and the second inverter INV2 outputs a high level. Obviously, the high-order compensation circuit 32 selects the current or voltage outputting different temperature characteristics according to different temperatures.
Preferably, as shown in fig. 5, the higher-order compensation circuit 32 includes:
a third mirror current branch 321, configured to output a positive temperature characteristic third current to the core circuit 2 when the temperature detection circuit 31 is controlled to be turned on; the third current is consistent with a first current temperature coefficient in the core circuit 2; the first current flows through a first component with positive temperature characteristic and a second component with negative temperature characteristic inside the core circuit 2, so that the reference voltage output by the core circuit 2 is influenced by temperature and is smaller than a second threshold value; the third mirror current branch 321 includes field effect transistors P12 and P13; the field effect transistors P12 and P13 and the field effect transistors P3 and P4 in the core circuit 2 form a current mirror. Then, when a current having a positive temperature characteristic is generated in the core circuit 2, the fets P12, P13, N5 also have the same effect, i.e., output a third current having a temperature coefficient identical to that of the first current. The magnitudes and temperature coefficients of the currents output by the field effect transistors P12 and P13 are the same as those of the field effect transistors P3 and P4 in the core circuit 2, but the magnitude of the third current Iptat is smaller than the first current output by the field effect transistors P3 and P4 due to the presence of the field effect transistor N5, but the temperature coefficient of the third current Iptat is the same as that of the first current.
If the first current increases, which causes an increase in a voltage drop of the first resistor R1 in the temperature detection circuit 31, which causes the transistor Q4 to be in a conducting state, the first inverter INV1 outputs a high level, which causes the field effect transistor N5 to be conducting, and the third mirror current branch 321 is selected to output the third current with a positive temperature characteristic. The third current is output to a position between a field effect transistor P8 and a resistor R4 in the core circuit 2 as compensation current, and the problem that the reference voltage output by the core circuit 2 is reduced due to temperature rise is solved; the third current increases the reference voltage output by the core circuit 2. At this time, the field effect transistor N6 is not turned on because the second inverter INV2 outputs a low level.
A negative temperature characteristic current source 322 for outputting a fourth current of a negative temperature characteristic to the core circuit 2 in a case where the temperature detection circuit 31 is controlled to be turned on;
under the control of the temperature detection circuit 31, the third current of the third mirror current branch 321 and the fourth current of the negative temperature characteristic current source 322 are output to the core circuit only one at the same time.
Preferably, as shown in fig. 5, the negative temperature characteristic current source 322 includes:
negative temperature characteristic reference current source 3221: a fifth current for generating a negative temperature characteristic; the temperature coefficient of the fifth current is consistent with that of the fourth current;
first current mirror 3222: the circuit is provided with a fourth mirror current branch and a fifth mirror current branch; the first current mirror 3222 is configured to use an output of the fourth mirror current branch as an output of the negative temperature characteristic current source; the fifth mirror current branch is connected to the negative temperature characteristic reference current source 3221. In this embodiment, the first current mirror 3222 includes field effect transistors P14 to P17, and N6. The field-effect transistors P14 to P17, N6 are devices that are not affected by temperature characteristics. The fourth mirror current branch is formed by field effect transistors P14, P15, and the fifth mirror current branch is formed by field effect transistors P16, P17. As described above, the fet N6 has the same function as the fet N5, and converts the current, which originally has the same magnitude and temperature coefficient as the first current in the core circuit 2, into the intet having only the same temperature coefficient but a magnitude much smaller than the first current under the control of the temperature detection circuit 31.
Preferably, the negative temperature characteristic reference current source 3221 includes: a third semiconductor device with negative temperature characteristic of voltage, and a second resistor R2 connected in parallel with the third semiconductor device; the fifth current generated by the second resistor R2 is the reference current of the first current mirror 3222. In the present embodiment, the third semiconductor device includes triodes Q5, Q6 that are affected by temperature. The triodes Q5 and Q6 are devices having a current negative temperature characteristic; that is, as the temperature rises, the output current of the negative temperature characteristic reference current source 3221 decreases. When the temperature is reduced, the field effect transistors P7 and P8 in the core circuit 2 are affected by the temperature, the output current is reduced, so that the output reference voltage Vref is also reduced, meanwhile, the first current flowing through the first resistor R1 is also reduced, so that the triode Q4 is not conducted, the collector of the triode Q4 outputs a high level, the second inverter INV2 also outputs a high level, so that the fourth mirror current branches P14 and P15 output the reference current of the negative temperature characteristic reference power source 3221, and the reference current flows to the resistor R4 and the triode Q3 in the core circuit, thereby compensating for the reduction of the reference voltage Vref caused by the reduction of the output currents of the field effect transistors P7 and P8 due to the temperature reduction. Therefore, a certain critical temperature point exists between the conduction and the non-conduction of the Q4, and the critical temperature point can be set in a reasonable temperature range through reasonably matching the currents of the field effect transistors P10 and P11 and the first resistor R1.
Preferably, the first semiconductor, the second semiconductor or the third semiconductor is: a field effect transistor or a bipolar transistor. The negative temperature characteristic of the bipolar triode current is due to the fact that a PN junction has the negative temperature characteristic.
The foregoing is a preferred embodiment of the present application and is not intended to limit the scope of the application in any way, and any features disclosed in this specification (including the abstract and drawings) may be replaced by alternative features serving equivalent or similar purposes, unless expressly stated otherwise. That is, unless expressly stated otherwise, each feature is only an example of a generic series of equivalent or similar features.
Claims (10)
1. A bandgap reference circuit, comprising: the starting circuit (1), the core circuit (2) and the compensation circuit (3) are connected in sequence;
the starting circuit (1) is used for starting the core circuit (2) to enter a stable working state when conducting electricity; the feedback of the core circuit (2) after entering a stable working state is utilized to close the output of the starting circuit (1);
the core circuit (2) is used for entering a stable working state according to the output of the starting circuit (1) and generating a low-temperature-drift reference voltage output;
the compensation circuit (3) is used for outputting a compensation current or voltage to the core circuit (2) according to the detected current or voltage which is influenced by the temperature inside the core circuit (2), so that the reference voltage of the low temperature drift output by the core circuit (2) is influenced by the temperature and is smaller than a first threshold value.
2. The circuit according to claim 1, characterized in that the compensation circuit (3) comprises: a temperature detection circuit (31) and a high-order compensation circuit (32) connected in sequence;
the temperature detection circuit (31) is used for determining the type of current or voltage which needs to be compensated by the output of the core circuit (2) according to the current or voltage which is influenced by the temperature and is inside the core circuit (2);
the high-order compensation circuit (32) is used for compensating the output current or voltage of the core circuit (2) according to the type of the current or voltage which needs to be compensated and is output by the temperature detection circuit (31).
3. The circuit according to claim 2, characterized in that the temperature detection circuit (31) comprises: the temperature control circuit comprises a first mirror image current branch (311) and a temperature control module (312) which are connected in series; and a selection module (313) connected in series between the output of the temperature control module (312) and the high-order compensation circuit (32);
the first mirror current branch (311) is used for generating a second current which is consistent with the first current inside the core circuit (2); the first current sequentially flows through a first component with positive temperature characteristic and a second component with negative temperature characteristic in the core circuit (2), so that the reference voltage output by the core circuit (2) is influenced by temperature and is smaller than a second threshold value;
the temperature control module (312): -a control signal for outputting a temperature dependent control signal to the selection module (313) when the second current varies with temperature;
the selection module (313): and the selection circuit is used for calculating and outputting a selection signal which determines the type of the current or the voltage output by the high-order compensation circuit (32) to the high-order compensation circuit (32) according to the received control signal.
4. A circuit according to claim 3, characterized in that the first mirrored current branch (311) comprises: at least one first semiconductor device having a current positive temperature characteristic or a current negative temperature characteristic; the current temperature characteristic of the first semiconductor device is kept consistent with the current temperature characteristic of a second semiconductor of a second mirror current branch in a core circuit (2) through which the first current flows.
5. The circuit of claim 3, wherein the temperature control module (312) comprises: the first resistor R1 and the switch module are connected in parallel; when the second current flowing through the first resistor R1 is smaller than a third threshold or larger than the third threshold, the switch module outputs a different control signal to the selection module (313).
6. The circuit according to claim 3, characterized in that said selection module (313) comprises: at least two inverters; any one of the at least two inverters selects the high-order compensation circuit (32) to output a compensation current or a compensation voltage according to the control signal output by the temperature control module (312).
7. The circuit according to claim 2, wherein the higher order compensation circuit (32) comprises:
a third mirror current branch (321) for outputting a positive temperature characteristic third current to the core circuit (2) when the temperature detection circuit (31) is controlled to be turned on; the third current is consistent with the temperature coefficient of the first current inside the core circuit (2); the first current flows through a first component with positive temperature characteristic and a second component with negative temperature characteristic inside the core circuit (2), so that the reference voltage output by the core circuit (2) is influenced by temperature and is smaller than a second threshold value;
a negative temperature characteristic current source (322) for outputting a fourth current of negative temperature characteristic to the core circuit (2) in a case where the temperature detection circuit (31) is controlled to be turned on;
under the control of the temperature detection circuit (31), only one of the third current of the third mirror current branch (321) and the fourth current of the negative temperature characteristic current source (322) is output to the core circuit (2) at the same time.
8. The circuit of claim 7, wherein the negative temperature characteristic current source (322) comprises:
negative temperature characteristic reference current source (3221): a fifth current for generating a negative temperature characteristic; the magnitude of the fifth current is equal to that of the fourth current;
first current mirror (3222): the circuit is provided with a fourth mirror current branch and a fifth mirror current branch; the first current mirror is used for taking the output of the fourth mirror current branch as the output of a negative temperature characteristic current source (322); the fifth mirror current branch is connected with the negative temperature characteristic reference current source (3221).
9. The circuit of claim 8, wherein the negative temperature characteristic reference current source (3221) comprises: a third semiconductor device with negative temperature characteristic of voltage, and a second resistor R2 connected in parallel with the third semiconductor device; the fifth current generated on the second resistor R2 is the reference current of the first current mirror (3222).
10. The circuit of claim 4 or 9, wherein the first semiconductor, second semiconductor, or third semiconductor is: a field effect transistor or a bipolar transistor.
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