CN102495659A - Exponential temperature compensation low-temperature drift complementary metal oxide semiconductor (CMOS) band-gap reference voltage source - Google Patents
Exponential temperature compensation low-temperature drift complementary metal oxide semiconductor (CMOS) band-gap reference voltage source Download PDFInfo
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Abstract
The invention discloses an exponential temperature compensation low-temperature drift complementary metal oxide semiconductor (CMOS) band-gap reference voltage source, which is characterized by comprising a first-order temperature compensation reference current generation circuit (1), an exponential temperature compensation current generation circuit (2), an error amplifier (3), a starting circuit (4) and a reference current-voltage conversion circuit (5), wherein the first input end of the first-order temperature compensation reference current generation circuit (1) is simultaneously connected with the output end of the starting circuit (4) and the first output end of the first-order temperature compensation reference current generation circuit (1), and the first output end of the first-order temperature compensation reference current generation circuit (1) is simultaneously connected with the first input end of the exponential temperature compensation current generation circuit (2) and the first input end of the error amplifier (3). By the exponential temperature compensation low-temperature drift CMOS band-gap reference voltage source, a few additional devices are increased, power consumption is slightly increased, and a lower temperature coefficient is obtained.
Description
Technical field
The present invention relates to be used for the reference voltage source of the extremely low temperature coefficient that radio frequency, Digital Analog Hybrid Circuits needs produce.The particularly analog to digital converter of high-speed, high precision and low pressure difference linearity source of stable pressure; Need one not with the reference voltage of environmental change as its comparative level and datum; The reference voltage that the present invention produces has the extremely low temperature coefficient; Lower power consumption can be operated under the low supply voltage, has satisfied this demand.
Background technology
For mimic channels such as digital to analog converter, analog to digital converter, electric pressure converter, voltage detecting circuit, reference voltage source is considerable module, and the stability of reference voltage source is directly connected to the duty of circuit and the performance of circuit.In order to satisfy the operate as normal requirement of circuit under different external environments, reference voltage source should have advantages such as output is stable, antijamming capability is strong, temperature coefficient is little.Relatively more commonly used is bandgap voltage reference at present, mainly contains two kinds of structures of voltage-mode and current-mode, all adopts bipolar device to realize.Its output voltage values of the bandgap voltage reference of voltage-mode structure is substantially constant near the band gap voltage of semiconductor material; And the output voltage values of the band-gap reference of current-mode structure is the dividing potential drop of the band gap voltage of semiconductor material, can be lower than the band gap voltage of semiconductor material, is suitable in low supply voltage.
The principle of work of bandgap voltage reference is to make Δ V
BEThe positive temperature coefficient (PTC) and the V of (voltage differences of two the base-launch sites of bipolar transistor under the biasing of different electric current density)
BEThe drift that negative temperature coefficient produced of (bipolar transistor base-launch site voltage) is cancelled out each other, and produces circuit through high order temperature compensation current, offsets V simultaneously
BEHigher order term, to reach extremely low temperature coefficient.
Summary of the invention
Technical matters: invention provides a kind of low temperature drift CMOS bandgap voltage reference of index temperature compensation.Circuit has improved traditional amplifier on the basis of traditional bandgap voltage reference, increased high order temperature compensation current and produced circuit, makes Δ V to be implemented in
BEThe positive temperature coefficient (PTC) and the V of (voltage differences of two the base-launch sites of bipolar transistor under the biasing of different electric current density)
BEOn the basis that the drift that negative temperature coefficient produced of (bipolar transistor base-launch site voltage) is cancelled out each other, and, offset V through index temperature-compensated current generation circuit
BEHigher order term, reach the purpose of extremely low temperature coefficient.
Technical scheme: for solving the problems of the technologies described above; The invention provides a kind of low temperature drift CMOS bandgap voltage reference of index temperature compensation; This bandgap voltage reference comprises single order temperature compensation reference current generating circuit; The index temperature-compensated current produces circuit, error amplifier, start-up circuit and reference current-voltage conversion circuit;
The first input end of single order temperature compensation reference current generating circuit links to each other with the output terminal of start-up circuit and first output terminal of single order temperature compensation reference current generating circuit simultaneously; First output terminal of single order temperature compensation reference current generating circuit produces the first input end of circuit with the index temperature-compensated current simultaneously and the first input end of error amplifier links to each other; Second output terminal of single order temperature compensation reference current generating circuit produces second input end of circuit with the index temperature-compensated current simultaneously and second input end of error amplifier links to each other, the input end of the 3rd output termination reference current-voltage conversion circuit of single order temperature compensation reference current generating circuit; The output terminal that the index temperature-compensated current produces circuit links to each other with the 3rd input end of error amplifier and the input end of start-up circuit simultaneously; The output terminal of error amplifier produces second input end of circuit with the single order temperature-compensated current simultaneously and the input end of reference current-voltage conversion circuit links to each other; The output terminal of reference current-voltage conversion circuit promptly is the bandgap voltage reference of index temperature compensation.
Preferably, described index temperature-compensated current produce circuit by the 3rd NPN manage, the 4th NPN pipe, the 4th PMOS pipe and the 5th PMOS manage and form; The base stage of the 3rd NPN pipe is as the first input end of index temperature-compensated current generation circuit, and the collector while of the 3rd NPN pipe and the grid of the 4th PMOS pipe link to each other with drain electrode, as the output terminal of index temperature-compensated current generation circuit; The base stage of the 4th NPN pipe is as second input end of index temperature-compensated current generation circuit, and the collector while of the 4th NPN pipe and the grid of the 4th PMOS pipe link to each other with drain electrode; The emitter of the emitter of the 3rd NPN pipe and the 4th NPN pipe connects common; The grid of the 4th PMOS pipe links to each other with drain electrode, the grid of the 5th PMOS pipe links to each other with drain electrode, and as self-bias current source, the source electrode of the 4th PMOS pipe links to each other with direct supply VDD with the source electrode of the 5th PMOS pipe.
Beneficial effect:
1, than traditional single order temperature compensation bandgap reference voltage source, increase seldom device and power consumption, obtained lower temperature coefficient.
2, than traditional high-order temperature compensation bandgap reference voltage source, this index temperature-compensated current is that start-up circuit and error amplifier provide bias current when producing circuit counteracting band gap voltage higher order term, and circuit structure is simple, and power consumption is lower.
3, reference voltage source circuit of the present invention adopts the parasitic NPN pipe, can under CMOS technology, realize; Adopt the current-mode structure, be fit to operation at low power supply voltage.
Description of drawings
Fig. 1 is a structured flowchart of the present invention.
Fig. 2 is integrated circuit figure of the present invention.
Fig. 3 is that output voltage of the present invention is with the variation of temperature curve map.
Embodiment
Below in conjunction with accompanying drawing principle of the present invention and characteristic are described, institute gives an actual example and only is used to explain the present invention, is not to be used to limit scope of the present invention.
The present invention is a kind of bandgap voltage reference of the index temperature compensation structure based on Nover practical; Bandgap voltage reference comprises single order temperature compensation reference current generating circuit; The index temperature-compensated current produces circuit, error amplifier, start-up circuit and reference current-voltage conversion circuit.The first input end of single order temperature compensation reference current generating circuit connects the output terminal of start-up circuit and links to each other with first output terminal of single order temperature compensation reference current generating circuit; First output terminal of single order temperature compensation reference current generating circuit produces the first input end of circuit with the index temperature-compensated current simultaneously and the first input end of error amplifier links to each other; Second output terminal of single order temperature compensation reference current generating circuit produces second input end of circuit with the index temperature-compensated current simultaneously and second input end of error amplifier links to each other, the input end of the 3rd output termination reference current-voltage conversion circuit of single order temperature compensation reference current generating circuit; The output terminal that the index temperature-compensated current produces circuit links to each other with the 3rd input end of error amplifier and the input end of start-up circuit simultaneously; The output terminal of error amplifier links to each other with second input end of single order temperature compensation reference current generating circuit and the input end of reference current-voltage conversion circuit simultaneously; The output terminal of reference current-voltage conversion circuit promptly is the bandgap voltage reference of index temperature compensation.
The bandgap voltage reference of index temperature compensation provided by the invention is introduced the index temperature-compensated current and is produced circuit on the basis of traditional low-voltage single order temperature compensation bandgap reference voltage source.Index temperature-compensated current generation circuit utilizes the cascode currentamplificationfactor of NPN pipe to become the negative exponent relation with temperature; Obtain index temperature-compensated current with the temperature exponent function relation; Produce circuit and reference current-voltage conversion circuit in conjunction with the single order temperature-compensated current, thereby obtain the low temperature drift reference voltage of index temperature compensation.While index temperature-compensation circuit is output as start-up circuit and error amplifier provides biasing circuit.The low temperature drift CMOS bandgap voltage reference of this index temperature compensation can be operated under the low supply voltage, and circuit structure is simple, practical, consumes less power consumption, has realized high-order temperature compensated.
The low temperature drift CMOS bandgap voltage reference of index temperature compensation provided by the invention; This bandgap voltage reference comprises single order temperature compensation reference current generating circuit 1; The index temperature-compensated current produces circuit 2, error amplifier 3, start-up circuit 4 and reference current-voltage conversion circuit 5;
The first input end of single order temperature compensation reference current generating circuit 1 links to each other with the output terminal of start-up circuit 4 and first output terminal of single order temperature compensation reference current generating circuit 1 simultaneously; First output terminal of single order temperature compensation reference current generating circuit 1 produces the first input end of circuit 2 with the index temperature-compensated current simultaneously and the first input end of error amplifier 3 links to each other; Second output terminal of single order temperature compensation reference current generating circuit 1 produces second input end of circuit 2 with the index temperature-compensated current simultaneously and second input end of error amplifier 3 links to each other, the input end of the 3rd output termination reference current-voltage conversion circuit 5 of single order temperature compensation reference current generating circuit 1; The output terminal that the index temperature-compensated current produces circuit 2 links to each other with the 3rd input end of error amplifier 3 and the input end of start-up circuit 4 simultaneously; The output terminal of error amplifier 3 produces second input end of circuit 1 with the single order temperature-compensated current simultaneously and the input end of reference current-voltage conversion circuit 5 links to each other; The output terminal of reference current-voltage conversion circuit 5 promptly is the bandgap voltage reference of index temperature compensation.
Described index temperature-compensated current produces circuit 2 and is made up of the 3rd NPN pipe Q3, the 4th NPN pipe Q4, the 4th PMOS pipe M4 and the 5th PMOS pipe M5; The base stage of the 3rd NPN pipe Q3 is as the first input end of index temperature-compensated current generation circuit 2, and the collector of the 3rd NPN pipe Q3 links to each other with drain electrode with the grid of the 4th PMOS pipe M4 simultaneously, as the output terminal of index temperature-compensated current generation circuit 2; The base stage of the 4th NPN pipe Q4 is as second input end of index temperature-compensated current generation circuit 2, and the collector of the 4th NPN pipe Q4 links to each other with drain electrode with the grid of the 4th PMOS pipe M4 simultaneously; The emitter of the emitter of the 3rd NPN pipe Q3 and the 4th NPN pipe Q4 connects common; The grid of the 4th PMOS pipe M4 links to each other with drain electrode, the grid of the 5th PMOS pipe M5 links to each other with drain electrode, and as self-bias current source, the source electrode of the 4th PMOS pipe M4 links to each other with direct supply VDD with the source electrode of the 5th PMOS pipe M5.
Principle of the present invention:
Fig. 1 and Fig. 2 have provided the structural principle block diagram and the integrated circuit figure of the bandgap voltage reference circuit of being invented.How this circuit structure of narration realizes high-order temperature compensated principle of work below.
At first, following to some parameter-definitions of using on the formula in the analytic process: R
1The resistance of first resistance in the expression single order temperature compensation reference current generating circuit 1; R
2The resistance of the 2nd resistance in the expression single order temperature compensation reference current generating circuit 1; R
3Resistance (the R of the 3rd resistance in the expression single order temperature compensation reference current generating circuit 1
3With R
2Value identical); R
4The resistance of the 4th resistance in the expression single order temperature compensation reference current generating circuit 1; N representes that the 2nd NPN manages the ratio of the base area of Q2 and NPN pipe Q1, and m representes the ratio of the base area of the 3rd NPN pipe Q3 and NPN pipe Q1, and n representes that the 4th a NPN pipe Q4 and a NPN manage the ratio of the base area of Q1; V
BE1(T) base stage and the emitter voltage of expression the one NPN pipe are poor.K representes Boltzmann constant; Q representes the quantity of electric charge of an electronics; V
GIt is the band gap voltage of silicon; η is the parameter with silicon mobility and temperature dependency; β is the cascode current gain of NPN pipe, with temperature exponentially funtcional relationship; β
∞It is a temperature independent parameter; Δ E
GBe that to mix concentration dependent band-gap energy poor with emitter in the NPN pipe.
Can obtain the reference current of single order temperature compensation by single order temperature compensation reference current generating circuit:
Wherein
Suitably choose R
1, R
2With the value of N, can eliminate I fully
1In with the linear item of temperature, the cascode currentgain that utilizes NPN pipe in this invention is the negative exponent relation with temperature and obtains being electric current that high-order concerns in order to compensate I with temperature
1In other high-order terms, thereby obtain lower temperature coefficient.
Introduce the index temperature current among the present invention and produce circuit, total reference current is:
Wherein
Suitably choose the value of m, n, can obtain the reference current I of optimum temperature coefficient, this reference current converts the reference voltage V of low-temperature coefficient into through reference current-voltage conversion circuit
Ref:
Below through practical implementation case of the present invention and combine accompanying drawing, the object of the invention, circuit structure and advantage are further described.
As shown in Figure 1; The bandgap voltage reference of a kind of index temperature compensation structure based on Nover practical of the present invention comprises single order temperature compensation reference current generating circuit 1, and the index temperature-compensated current produces circuit 2; Error amplifier 3, start-up circuit 4 and reference current-voltage conversion circuit 5.The first input end of single order temperature compensation reference current generating circuit 1 connects the output terminal of start-up circuit 4 and links to each other with first output terminal of single order temperature compensation reference current generating circuit 1; First output terminal of single order temperature compensation reference current generating circuit 1 produces the first input end of circuit 2 with the index temperature-compensated current simultaneously and the first input end of error amplifier 3 links to each other; Second output terminal of single order temperature compensation reference current generating circuit 1 produces second input end of circuit 2 with the index temperature-compensated current simultaneously and second input end of error amplifier 3 links to each other, the input end of the 3rd output termination reference current-voltage conversion circuit 5 of single order temperature compensation reference current generating circuit 4; The output terminal that the index temperature-compensated current produces circuit 2 links to each other with the 3rd input end of error amplifier 3 and the input end of start-up circuit 4 simultaneously; The output terminal of error amplifier 3 links to each other with second input end of single order temperature compensation reference current generating circuit 1 and the input end of reference current-voltage conversion circuit 5 simultaneously; The output terminal of reference current-voltage conversion circuit 5 promptly is the bandgap voltage reference V of index temperature compensation
Ref
Wherein as shown in Figure 2, said single order temperature compensation reference current generating circuit 1 is made up of PMOS pipe M1, the 2nd PMOS pipe M2, NPN pipe Q1, the 2nd NPN pipe Q2, first resistance R 1, second resistance R 2 and the 3rd resistance R 3.The source electrode of the source electrode of the one PMOS pipe M1 and the 2nd PMOS pipe M2 meets direct supply voltage VDD; The grid of the one PMOS pipe M1 links to each other with the grid of the 2nd PMOS pipe M2, as second input end and the 3rd output terminal of single order temperature compensation reference current generating circuit 1; The drain electrode of the one PMOS pipe M1 links to each other with base stage with the collector of NPN pipe Q1 simultaneously, and links to each other with an end of second resistance R 2, as the first input end and first output terminal of single order temperature compensation reference current generating circuit 1; The emitter of the other end of second resistance R 2 and NPN pipe Q1 connects common; The drain electrode of the 2nd PMOS pipe M2 links to each other with an end of first resistance R 1 and an end of the 3rd resistance R 3 simultaneously, as second output terminal of single order temperature compensation reference current generating circuit; The other end of first resistance R 1 links to each other with base stage with the collector of the 2nd NPN pipe Q2 simultaneously; The emitter of the other end of second resistance R 3 and the 2nd NPN pipe Q2 connects common.
Described index temperature-compensated current produces circuit 2 and is made up of the 3rd NPN pipe Q3, the 4th NPN pipe Q4, the 4th PMOS pipe M4 and the 5th PMOS pipe M5.The base stage of the 3rd NPN pipe Q3 is as the first input end of index temperature-compensated current generation circuit 2, and the collector of the 3rd NPN pipe Q3 links to each other with drain electrode with the grid of the 4th PMOS pipe M4 simultaneously, as the output terminal of index temperature-compensated current generation circuit 2; The base stage of the 4th NPN pipe Q4 is as second input end of index temperature-compensated current generation circuit 2, and the collector of the 4th NPN pipe Q4 links to each other with drain electrode with the grid of the 4th PMOS pipe M4 simultaneously; The emitter of the emitter of the 3rd NPN pipe Q3 and the 4th NPN pipe Q4 connects common; The grid of the 4th PMOS pipe M4 links to each other with drain electrode, the grid of the 5th PMOS pipe M5 links to each other with drain electrode, and as self-bias current source, the source electrode of the 4th PMOS pipe M4 links to each other with direct supply VDD with the source electrode of the 5th PMOS pipe M5.
Described error amplifier 3 is imported single-ended output operation transconductance amplifier for difference, can adopt traditional one-level or two-stage cmos amplifier, also can adopt the amplifier of NPN pipe as efferent duct.First, second input end of error amplifier is the differential signal input end, and the 3rd input end of error amplifier is a bias input end, and the output terminal of error amplifier 3 is the single-ended signal output terminal.
Described start-up circuit 4 is made up of the 6th PMOS pipe M6, the 7th PMOS pipe M7 and the 5th resistance R 5.The source electrode of the source electrode of the 6th PMOS pipe M6 and the 7th PMOS pipe M7 meets direct supply VDD; The grid of the 6th PMOS pipe is the input end of start-up circuit 4, and the drain electrode of the 6th PMOS pipe M6 links to each other with the grid of the 7th PMOS pipe M7 and an end of the 5th resistance R 5 simultaneously; Another termination common of the 5th resistance R 5; The drain electrode of the 7th PMOS pipe (M7) is the output terminal of start-up circuit.
Described reference current voltage-change-over circuit 5 is made up of the 3rd PMOS pipe M3 and the 4th resistance R 4.The source electrode of the 3rd PMOS pipe M3 meets direct supply VDD; The grid of the 3rd PMOS pipe M3 is as the input end of reference current voltage-change-over circuit; The drain electrode of the 3rd PMOS pipe M3 links to each other with an end of the 4th resistance R 4; As the output terminal of reference current voltage-change-over circuit, that is to say the output terminal of the bandgap voltage reference of index temperature compensation, another termination common of the 4th resistance R 4
Referring to Fig. 3, shown in the figure for temperature of the present invention when-40 ℃-125 ℃ change, corresponding benchmark output voltage V
RefChange curve.Can find out the benchmark output voltage V by curve map
RefMean value be 505.71V, temperature coefficient is less than 1.32ppm/ ℃ (every degree centigrade change 1,000,000/).
More than be merely preferred embodiment of the present invention, or not all within spirit of the present invention and principle in order to restriction the present invention, any modification of being done, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (2)
1. the low temperature drift CMOS bandgap voltage reference of an index temperature compensation; It is characterized in that: this bandgap voltage reference comprises single order temperature compensation reference current generating circuit (1); The index temperature-compensated current produces circuit (2); Error amplifier (3), start-up circuit (4) and reference current-voltage conversion circuit (5);
The first input end of single order temperature compensation reference current generating circuit (1) links to each other with the output terminal of start-up circuit (4) and first output terminal of single order temperature compensation reference current generating circuit (1) simultaneously; First output terminal of single order temperature compensation reference current generating circuit (1) produces the first input end of circuit (2) with the index temperature-compensated current simultaneously and the first input end of error amplifier (3) links to each other; Second output terminal of single order temperature compensation reference current generating circuit (1) produces second input end of circuit (2) with the index temperature-compensated current simultaneously and second input end of error amplifier (3) links to each other, the input end of the 3rd output termination reference current-voltage conversion circuit (5) of single order temperature compensation reference current generating circuit (1); The output terminal that the index temperature-compensated current produces circuit (2) links to each other with the 3rd input end of error amplifier (3) and the input end of start-up circuit (4) simultaneously; The output terminal of error amplifier (3) produces second input end of circuit (1) with the single order temperature-compensated current simultaneously and the input end of reference current-voltage conversion circuit (5) links to each other; The output terminal of reference current-voltage conversion circuit (5) promptly is the bandgap voltage reference of index temperature compensation.
2. the low temperature drift CMOS bandgap voltage reference of index temperature compensation according to claim 1 is characterized in that: described index temperature-compensated current produces circuit (2) and is made up of the 3rd NPN pipe (Q3), the 4th NPN pipe (Q4), the 4th PMOS pipe (M4) and the 5th PMOS pipe (M5); The base stage of the 3rd NPN pipe (Q3) produces the first input end of circuit (2) as the index temperature-compensated current; The collector of the 3rd NPN pipe (Q3) links to each other with drain electrode with the grid of the 4th PMOS pipe (M4) simultaneously, produces the output terminal of circuit (2) as the index temperature-compensated current; The base stage of the 4th NPN pipe (Q4) is as second input end of index temperature-compensated current generation circuit (2), and the grid of the collector of the 4th NPN pipe (Q4) while and the 4th PMOS pipe (M4) links to each other with drain electrode; The emitter of the emitter of the 3rd NPN pipe (Q3) and the 4th NPN pipe (Q4) connects common; The grid of the 4th PMOS pipe (M4) links to each other with drain electrode, the grid of the 5th PMOS pipe (M5) links to each other with drain electrode, and as self-bias current source, the source electrode of the 4th PMOS pipe (M4) links to each other with direct supply VDD with the source electrode that the 5th PMOS manages (M5).
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| CN104298293A (en) * | 2013-07-17 | 2015-01-21 | 北京兆易创新科技股份有限公司 | Band-gap reference voltage source with curvature compensation function |
| CN104375545A (en) * | 2013-08-14 | 2015-02-25 | 奕力科技股份有限公司 | Band-gap reference voltage circuit and electronic device thereof |
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| CN102981546A (en) * | 2012-11-23 | 2013-03-20 | 国民技术股份有限公司 | Index-compensation band-gap reference voltage source |
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| CN103744464A (en) * | 2013-12-20 | 2014-04-23 | 中国科学院微电子研究所 | Band-gap reference circuit with current compensation |
| CN103744464B (en) * | 2013-12-20 | 2015-07-29 | 中国科学院微电子研究所 | A kind of band-gap reference circuit with current compensation |
| CN104977968A (en) * | 2014-04-14 | 2015-10-14 | 北京工业大学 | Band-gap reference circuit with high-order temperature compensation function |
| CN105388953A (en) * | 2015-09-21 | 2016-03-09 | 东南大学 | Band-gap reference voltage source with high power rejection ratio |
| CN105974991A (en) * | 2016-07-05 | 2016-09-28 | 湖北大学 | Low-temperature-coefficient band-gap reference voltage source with high-order temperature compensation |
| CN105974991B (en) * | 2016-07-05 | 2017-10-13 | 湖北大学 | With high-order temperature compensated low temperature coefficient with gap reference voltage source |
| CN107272811A (en) * | 2017-08-04 | 2017-10-20 | 佛山科学技术学院 | A kind of low-temperature coefficient reference voltage source circuit |
| CN107272811B (en) * | 2017-08-04 | 2018-11-30 | 佛山科学技术学院 | A kind of low-temperature coefficient reference voltage source circuit |
| CN111198588A (en) * | 2018-11-16 | 2020-05-26 | 力旺电子股份有限公司 | Band-gap reference circuit |
| CN111198588B (en) * | 2018-11-16 | 2021-11-09 | 力旺电子股份有限公司 | Band-gap reference circuit |
| CN111610812A (en) * | 2019-02-26 | 2020-09-01 | 合肥杰发科技有限公司 | Band-gap reference power supply generation circuit and integrated circuit |
| CN111610812B (en) * | 2019-02-26 | 2022-08-30 | 武汉杰开科技有限公司 | Band-gap reference power supply generation circuit and integrated circuit |
| CN111930172A (en) * | 2020-09-03 | 2020-11-13 | 武汉第二船舶设计研究所(中国船舶重工集团公司第七一九研究所) | Single-operational-amplifier self-biased cascode band-gap reference circuit |
| CN111930172B (en) * | 2020-09-03 | 2022-04-15 | 武汉第二船舶设计研究所(中国船舶重工集团公司第七一九研究所) | Single-operational-amplifier self-biased cascode band-gap reference circuit |
| CN114265038A (en) * | 2021-11-22 | 2022-04-01 | 电子科技大学 | High-precision switch type phase-shifting unit with temperature compensation effect |
| CN114265038B (en) * | 2021-11-22 | 2024-02-09 | 电子科技大学 | High-precision switch type phase shifting unit with temperature compensation effect |
| CN114489222A (en) * | 2022-02-10 | 2022-05-13 | 重庆邮电大学 | Band-gap reference circuit for power supply chip |
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