CN106155171A - The bandgap voltage reference circuit that linear temperature coefficient compensates - Google Patents

The bandgap voltage reference circuit that linear temperature coefficient compensates Download PDF

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Publication number
CN106155171A
CN106155171A CN201610611414.7A CN201610611414A CN106155171A CN 106155171 A CN106155171 A CN 106155171A CN 201610611414 A CN201610611414 A CN 201610611414A CN 106155171 A CN106155171 A CN 106155171A
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pmos transistor
grid
drain electrode
transistor
temperature coefficient
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CN106155171B (en
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赵照
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Hefei Xinfoo Sensor Technology Co Ltd
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Hefei Xinfoo Sensor Technology Co Ltd
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    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is dc
    • G05F3/10Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices

Abstract

The present invention provides the bandgap voltage reference circuit that a kind of linear temperature coefficient compensates, including: MOSFET V_th generation module, for extracting the threshold voltage with linear negative temperature characterisitic;Positive temperature coefficient voltages extraction module, for extracting the positive temperature coefficient voltages with linear positive temperature characterisitic;And weight summation module, it is added the reference voltage of acquisition zero-temperature coefficient for threshold voltage is carried out weight with positive temperature coefficient voltages.Bandgap voltage reference circuit is compensated by the present invention by linear temperature coefficient compensation method, it is the threshold voltage of negative linear relationship by the circuit design generation of MOSFET V_th generation module and temperature, it is the positive temperature coefficient voltages of positive linear relationships by positive temperature coefficient voltages extraction module generation and temperature, two positive and negative contrary voltages of temperature coefficient are carried out weight and are added the reference voltage that can obtain zero-temperature coefficient by exploitation right weight summation module, it is achieved the ultra low temperature coefficient of bandgap voltage reference circuit.

Description

The bandgap voltage reference circuit that linear temperature coefficient compensates
Technical field
The present invention relates to technical field of integrated circuits, the bandgap reference voltage compensated particularly to a kind of linear temperature coefficient Circuit.
Background technology
Bandgap voltage reference circuit has low-temperature coefficient, low supply voltage and can be compatible with standard CMOS process etc. excellent Point is widely used in the Digital Analog Hybrid Circuits such as D/A switch, analog/digital conversion, memorizer and Switching Power Supply.Band gap voltage The stability of reference circuit output voltage and noise resisting ability affect the precision of various application system, along with application system essence The raising of degree, it would be highly desirable to the bandgap voltage reference circuit of ultralow even zero-temperature coefficient occurs.
The temperature compensation of Traditional bandgap voltage reference circuit has low order temperature-compensating and high-order temperature compensated.Wherein, Low order temperature-compensating typically refers to the base emitter voltage V of the bipolar transistor by having negative temperature coefficientBEWith there is positive temperature Two V of degree coefficientBEDifference DELTA VBEIt is added, reduces the temperature coefficient of output voltage, due to VBEIt it is the high-order letter of temperature Number, its temperature characterisitic is not linear, and Δ VBETemperature characterisitic be first-order linear, therefore use the two physical quantity mutual Compensating, its temperature coefficient is difficult to be reduced to less than 10ppm/ DEG C.
And in high-order temperature compensated technology, favorably the high-order temperature characterisitic with resistance carries out the example of temperature-compensating, In this example, the temperature coefficient of reference voltage can be reduced to 5.3 ppm/ DEG C, but there is resistance mismatch in actual process makes Problem;Also utilizing the voltage difference formation high-order temperature circuit of bipolar transistor to carry out the example of temperature-compensating, using should Method temperature coefficient can be reduced to 7.5 ppm/ DEG C, but the method has resistance loop in circuit, affects the essence of reference voltage Degree;There is also and utilize voltage and resistance to form high-order temperature compensated example, the temperature-coefficient of electrical resistance of this kind of method can be reduced to 4 Ppm/ DEG C, but electric current is directly incorporated in current mirror by this structure, the problem that there is current mirror matching precision.In a word, although high Temperature coefficient can be reduced to less than 10ppm/ DEG C by rank temperature compensation, but the complexity of its circuit and power consumption are all incited somebody to action It is multiplied.
Summary of the invention
In order to solve the problems referred to above, the present invention provides a kind of bandgap voltage reference circuit, is compensated by linear temperature coefficient Obtain the reference voltage of zero-temperature coefficient.
The technical solution used in the present invention is: the bandgap voltage reference circuit that a kind of linear temperature coefficient compensates, including: MOSFET V_th generation module, is the threshold voltage of negative linear relationship for extraction and temperature, described MOSFET threshold value electricity Pressure extraction module include the first PMOS transistor, the second PMOS transistor, the 3rd PMOS transistor, the 4th PMOS transistor, the Five PMOS transistor, the first nmos pass transistor, the second nmos pass transistor and the first operational amplifier;
Wherein, the source electrode of the first PMOS transistor connects supply voltage VDD, the grid of the first PMOS transistor and drain electrode and the 3rd The source electrode of PMOS transistor is connected, and the source electrode of the second PMOS transistor connects supply voltage VDD, the source electrode of the 4th PMOS transistor Connect supply voltage VDD, the grid of the second PMOS transistor and the grid of the 3rd PMOS transistor and drain electrode, the 4th PMOS crystal The grid of pipe is connected;
The drain electrode of the second PMOS transistor is connected with the drain electrode of the first nmos pass transistor, the drain electrode and second of the 3rd PMOS transistor The drain electrode of nmos pass transistor is connected, and the drain electrode of the 4th PMOS transistor is connected with the source electrode of the 5th PMOS transistor, a NMOS The grid of transistor and the grid of the second nmos pass transistor are connected;
The positive input terminal of the first operational amplifier and the grid of the second PMOS transistor, the grid of the 3rd PMOS transistor and leakage Pole, the grid of the 4th PMOS transistor, the drain electrode of the second nmos pass transistor are connected, the negative input end of the first operational amplifier and the The drain electrode of two PMOS transistor, the drain electrode of the first nmos pass transistor are connected, the outfan of the first operational amplifier and a NMOS The grid of transistor, the grid of the second nmos pass transistor are connected;
Source electrode and the substrate of the first nmos pass transistor are connected to ground signalling GND, and the source electrode of the second nmos pass transistor and substrate are even Receiving ground signalling GND, grid and the drain electrode of the 5th PMOS transistor are connected to ground signalling GND;
Positive temperature coefficient voltages extraction module, is the positive temperature coefficient voltages of positive linear relationships for extraction and temperature;
And weight summation module, it is added acquisition zero-temperature coefficient for threshold voltage is carried out weight with positive temperature coefficient voltages Reference voltage.
Preferably, described positive temperature coefficient voltages extraction module include the 6th PMOS transistor, the 7th PMOS transistor, the 8th PMOS transistor, the first resistance, the second resistance, a NPN audion, the 2nd NPN audion, the second operational amplifier;
Wherein, the source electrode of the 6th PMOS transistor connects supply voltage VDD, and the source electrode of the 7th PMOS transistor connects supply voltage VDD, the source electrode of the 8th PMOS transistor connects supply voltage VDD, the grid of the 6th PMOS transistor and the 7th PMOS transistor Grid, the 8th PMOS transistor grid be connected;
6th PMOS transistor drain electrode be connected with colelctor electrode and the base stage of a NPN audion, the 7th PMOS transistor Drain electrode is connected with the anode of the first resistance, and the negative terminal of the first resistance and the colelctor electrode of the 2nd NPN audion and base stage are connected, and the 8th The drain electrode of PMOS transistor is connected with the anode of the second resistance;
The colelctor electrode of the negative input end of the second operational amplifier and the drain electrode of the 6th PMOS transistor, a NPN audion is connected, The anode of the positive input terminal of the second operational amplifier and the drain electrode of the 7th PMOS transistor, the first resistance is connected, and the second computing is put The outfan of big device and the grid of the 6th PMOS transistor, the grid of the 7th PMOS transistor, the grid of the 8th PMOS transistor It is connected;
The emitter stage of the oneth NPN audion is connected to ground signalling GND, and the emitter stage of the 2nd NPN audion is connected to ground connection letter Number GND, the negative terminal of the second resistance is connected to ground signalling GND.
Preferably, described weight summation module includes the 9th PMOS transistor, the tenth PMOS transistor, the 3rd NMOS crystal Pipe, the 3rd resistance and the 3rd operational amplifier;
Wherein, the source electrode of the 9th PMOS transistor connects supply voltage VDD, and the source electrode of the tenth PMOS transistor connects supply voltage VDD, the 9th PMOS transistor grid and drain electrode and the grid of the tenth PMOS transistor, the drain electrode phase of the 3rd nmos pass transistor Even, the source electrode of the 3rd nmos pass transistor and the anode of the 3rd resistance are connected, and the drain electrode of the tenth PMOS transistor is brilliant with the 8th PMOS The drain electrode of body pipe, the anode of the second resistance are connected;
The anode of the negative input end of the 3rd operational amplifier and the source electrode of the 3rd nmos pass transistor, the 3rd resistance is connected, the 3rd fortune The source electrode of the positive input terminal and the drain electrode of the 4th PMOS transistor, the 5th PMOS transistor of calculating amplifier is connected, and the 3rd computing is put The outfan of big device and the grid of the 3rd nmos pass transistor are connected;
The negative terminal of the 3rd resistance is connected to ground signalling GND.
Preferably, described first PMOS transistor, the second PMOS transistor, the 3rd PMOS transistor and the 5th PMOS crystal Channel width W of pipeMP1、WMP2、WMP3, and WMP5Meet WMP1=WMP3, WMP2=WMP5, WMP1=9WMP5Condition.
Compared with prior art, there is techniques below effect in the present invention:
Bandgap voltage reference circuit is compensated by the present invention by linear temperature coefficient compensation method, by MOSFET threshold voltage Circuit design generation and the temperature of extraction module are the threshold voltage of negative linear relationship, positive temperature coefficient voltages extraction module produce Being the positive temperature coefficient voltages of positive linear relationships with temperature, exploitation right weight summation module is by two positive and negative contrary voltages of temperature coefficient Carry out weight and be added the reference voltage that can obtain zero-temperature coefficient, it is achieved the ultra low temperature coefficient of bandgap voltage reference circuit.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of bandgap voltage reference circuit of the present invention;
Fig. 2 is the circuit diagram of MOSFET V_th generation module in Fig. 1;
Fig. 3 is the circuit diagram of positive temperature coefficient voltages extraction module in Fig. 1.
Detailed description of the invention
Below in conjunction with accompanying drawing, the invention will be further described.
See Fig. 1 to Fig. 3, the bandgap voltage reference circuit 100 that a kind of linear temperature coefficient compensates, including: MOSFET threshold Threshold voltage extraction module 101, is used for extracting threshold voltage VO_VTH, described threshold voltage VO_VTHIt is negative linear relationship with temperature;Just Temperature coefficient voltages extraction module 102, is used for extracting voltage VPTAT, described voltage VPTATIt is positive linear relationships with temperature;And weight Summation module 103, for by threshold voltage VO_VTHWith voltage VPTATCarry out weight and be added the reference voltage obtaining zero-temperature coefficient Vref
Specifically, described MOSFET V_th generation module includes the first PMOS transistor (MP1), the 2nd PMOS crystal Pipe (MP2), the 3rd PMOS transistor (MP3), the 4th PMOS transistor (MP4), the 5th PMOS transistor (MP5), a NMOS Transistor (MN1), the second nmos pass transistor (MN2) and the first operational amplifier (A1);
Wherein, the source electrode of the first PMOS transistor connects supply voltage VDD, the grid of the first PMOS transistor and drain electrode and the 3rd The source electrode of PMOS transistor is connected, and the source electrode of the second PMOS transistor connects supply voltage VDD, the source electrode of the 4th PMOS transistor Connect supply voltage VDD, the grid of the second PMOS transistor and the grid of the 3rd PMOS transistor and drain electrode, the 4th PMOS crystal The grid of pipe is connected;
The drain electrode of the second PMOS transistor is connected with the drain electrode of the first nmos pass transistor, the drain electrode and second of the 3rd PMOS transistor The drain electrode of nmos pass transistor is connected, and the drain electrode of the 4th PMOS transistor is connected with the source electrode of the 5th PMOS transistor, a NMOS The grid of transistor and the grid of the second nmos pass transistor are connected;
The positive input terminal of the first operational amplifier and the grid of the second PMOS transistor, the grid of the 3rd PMOS transistor and leakage Pole, the grid of the 4th PMOS transistor, the drain electrode of the second nmos pass transistor are connected, the negative input end of the first operational amplifier and the The drain electrode of two PMOS transistor, the drain electrode of the first nmos pass transistor are connected, the outfan of the first operational amplifier and a NMOS The grid of transistor, the grid of the second nmos pass transistor are connected;
Source electrode and the substrate of the first nmos pass transistor are connected to ground signalling GND, and the source electrode of the second nmos pass transistor and substrate are even Receiving ground signalling GND, grid and the drain electrode of the 5th PMOS transistor are connected to ground signalling GND.
Seeing Fig. 2, in MOSFET V_th generation module routine, the first nmos pass transistor, the 2nd NMOS are brilliant Body pipe and the first operational amplifier ensure that I1 and I2 is equal, meanwhile, and I3=I1=I2, therefore
(1)
Wherein, VTH_MP2、VTH_MP3、VTH_MP1And VTH_MP5It is respectively the threshold voltage of MP2, MP3, MP1 and MP5;WMP1、WMP2、 WMP3、WMP5It is respectively the channel width of MP1, MP2, MP3 and MP5.
In the present invention, all MOSFET are operated in saturation region and have identical channel length, therefore VTH_MP2=VTH_MP3= VTH_MP1=VTH_MP5 =VTHIf, WMP1=WMP3, WMP2=WMP5, WMP1=9WMP5, then above formula is reduced to
(2)
According to the temperature model of threshold voltage in BSIM3V3 model
(3)
Therefore, obtain
(4)
In formula (4), VTH(T0) it is reference temperature T0Corresponding threshold voltage;KT1 is the temperature coefficient of threshold voltage, KT1 < 0;KT1L is the temperature coefficient relevant to channel length, KT1L < 0;KT2 is the temperature coefficient relevant to Substrate bias, KT2 < 0;LeffLength of effective channel for MOSFET;VBSFor the voltage between MOSFET substrate and source electrode;T is absolute temperature, and unit is K.It can be seen that MOSFET V_th generation module from formula.The threshold voltage V extractedO_VTHThere is linear negative temperature special Property.
In the present invention, channel width W of MP1, MP2, MP3 and MP5MP1、WMP2、WMP3、WMP5It is preferably in WMP1=WMP3, WMP2=WMP5, WMP1=9WMP5Condition, with this understanding, threshold voltage VO_VTHWith metal-oxide-semiconductor threshold voltage VTHRatio be 4, but W in the present inventionMP1、WMP2、WMP3、WMP5Can also is that other values, as long as V can be madeO_VTHAnd VTHMeet on the occasion of multiple proportion , the present invention is not specifically limited.
Further, described positive temperature coefficient voltages extraction module includes the 6th PMOS transistor (M1), the 7th PMOS crystal Pipe (M2), the 8th PMOS transistor (M3), the first resistance (R1), the second resistance (R2), a NPN audion (Q1), the 2nd NPN Audion (Q2), the second operational amplifier (A2);
Wherein, the source electrode of the 6th PMOS transistor connects supply voltage VDD, and the source electrode of the 7th PMOS transistor connects supply voltage VDD, the source electrode of the 8th PMOS transistor connects supply voltage VDD, the grid of the 6th PMOS transistor and the 7th PMOS transistor Grid, the 8th PMOS transistor grid be connected;
6th PMOS transistor drain electrode be connected with colelctor electrode and the base stage of a NPN audion, the 7th PMOS transistor Drain electrode is connected with the anode of the first resistance, and the negative terminal of the first resistance and the colelctor electrode of the 2nd NPN audion and base stage are connected, and the 8th The drain electrode of PMOS transistor is connected with the anode of the second resistance;
The colelctor electrode of the negative input end of the second operational amplifier and the drain electrode of the 6th PMOS transistor, a NPN audion is connected, The anode of the positive input terminal of the second operational amplifier and the drain electrode of the 7th PMOS transistor, the first resistance is connected, and the second computing is put The outfan of big device and the grid of the 6th PMOS transistor, the grid of the 7th PMOS transistor, the grid of the 8th PMOS transistor It is connected;
The emitter stage of the oneth NPN audion is connected to ground signalling GND, and the emitter stage of the 2nd NPN audion is connected to ground connection letter Number GND, the negative terminal of the second resistance is connected to ground signalling GND.
See Fig. 3, I1=I2=I3 in figure, therefore
(5)
Wherein, VBE1、VBE2Base emitter voltage for Q1 and Q2;K is Boltzmann constant, 1.308 × 10-23J/K;Q is Electronic charge, 1.6 × 10-19C;N is Q2 Yu Q1 emitter junction area ratio;T is absolute temperature, and unit is K;R1And R2It is One resistance R1, the resistance value of the second resistance R2.
Preferably, described weight summation module include the 9th PMOS transistor (M4), the tenth PMOS transistor (M5), the 3rd Nmos pass transistor (M6), the 3rd resistance (R3) and the 3rd operational amplifier (A3);
Wherein, the source electrode of the 9th PMOS transistor connects supply voltage VDD, and the source electrode of the tenth PMOS transistor connects supply voltage VDD, the 9th PMOS transistor grid and drain electrode and the grid of the tenth PMOS transistor, the drain electrode phase of the 3rd nmos pass transistor Even, the source electrode of the 3rd nmos pass transistor and the anode of the 3rd resistance are connected, and the drain electrode of the tenth PMOS transistor is brilliant with the 8th PMOS The drain electrode of body pipe, the anode of the second resistance are connected;
The anode of the negative input end of the 3rd operational amplifier and the source electrode of the 3rd nmos pass transistor, the 3rd resistance is connected, the 3rd fortune The source electrode of the positive input terminal and the drain electrode of the 4th PMOS transistor, the 5th PMOS transistor of calculating amplifier is connected, and the 3rd computing is put The outfan of big device and the grid of the 3rd nmos pass transistor are connected;
The negative terminal of the 3rd resistance is connected to ground signalling GND.
Weight summation module, the threshold voltage V that can will extractTHIt is converted into electric current, with the electric current phase of positive temperature coefficient Add, then be can be obtained by the reference voltage V needed by the second resistance R2ref.Concrete formula is as follows:
(6)
Wherein, N is the emitter junction area ratio of Q2 and Q1;Q is electronic charge, 1.6 × 10-19C;K is that Boltzmann is normal Number, 1.308 × 10-23J/K;T is absolute temperature, and unit is K;R1、R2、R3Be respectively the first resistance R1, the second resistance R2, the 3rd The resistance value of resistance R3.It can be seen that V from formula (6)THThere is negative temperature coefficient,There is positive temperature coefficient, logical Cross adjustment R2And R3, R2And R1Ratio positive temperature coefficient and negative temperature coefficient just can be made to cancel out each other, it is thus achieved that temperature independent Reference voltage Vref
It should be noted that in side circuit designs, electric current plus-minus is easiest to realize, and is given in the present embodiment Weight summation module is only more preferably scheme, the restriction not carried out the present invention.
Bandgap voltage reference circuit is compensated by the present invention by linear temperature coefficient compensation method, by MOSFET threshold value Circuit design generation and the temperature of voltage subtraction module are the threshold voltage of negative linear relationship, by positive temperature coefficient voltages extraction module Producing with temperature is the positive temperature coefficient voltages of positive linear relationships, and exploitation right weight summation module is by positive and negative for two temperatures coefficient contrary Voltage carries out weight and is added the reference voltage that can obtain zero-temperature coefficient, it is achieved the ultra low temperature system of bandgap voltage reference circuit Number.Bandgap voltage reference circuit of the present invention is applied to the digital-to-analogues such as D/A switch, analog/digital conversion, memorizer and Switching Power Supply In the application systems such as hybrid circuit, the operating accuracy of application system will be significantly improved.
In a word, these are only preferred embodiment of the present invention, be not intended to limit protection scope of the present invention, in the present invention Scope within, equivalents or the amendment of being made the present invention should be included within the scope of the present invention.

Claims (4)

1. the bandgap voltage reference circuit that a linear temperature coefficient compensates, it is characterised in that including: MOSFET threshold voltage carries Delivery block, is the threshold voltage of negative linear relationship for extracting with temperature, and described MOSFET V_th generation module includes the One PMOS transistor, the second PMOS transistor, the 3rd PMOS transistor, the 4th PMOS transistor, the 5th PMOS transistor, first Nmos pass transistor, the second nmos pass transistor and the first operational amplifier;
Wherein, the source electrode of the first PMOS transistor connects supply voltage VDD, the grid of the first PMOS transistor and drain electrode and the 3rd The source electrode of PMOS transistor is connected, and the source electrode of the second PMOS transistor connects supply voltage VDD, the source electrode of the 4th PMOS transistor Connect supply voltage VDD, the grid of the second PMOS transistor and the grid of the 3rd PMOS transistor and drain electrode, the 4th PMOS crystal The grid of pipe is connected;
The drain electrode of the second PMOS transistor is connected with the drain electrode of the first nmos pass transistor, the drain electrode and second of the 3rd PMOS transistor The drain electrode of nmos pass transistor is connected, and the drain electrode of the 4th PMOS transistor is connected with the source electrode of the 5th PMOS transistor, a NMOS The grid of transistor and the grid of the second nmos pass transistor are connected;
The positive input terminal of the first operational amplifier and the grid of the second PMOS transistor, the grid of the 3rd PMOS transistor and leakage Pole, the grid of the 4th PMOS transistor, the drain electrode of the second nmos pass transistor are connected, the negative input end of the first operational amplifier and the The drain electrode of two PMOS transistor, the drain electrode of the first nmos pass transistor are connected, the outfan of the first operational amplifier and a NMOS The grid of transistor, the grid of the second nmos pass transistor are connected;
Source electrode and the substrate of the first nmos pass transistor are connected to ground signalling GND, and the source electrode of the second nmos pass transistor and substrate are even Receiving ground signalling GND, grid and the drain electrode of the 5th PMOS transistor are connected to ground signalling GND;
Positive temperature coefficient voltages extraction module, is the positive temperature coefficient voltages of positive linear relationships for extraction and temperature;
And weight summation module, it is added acquisition zero-temperature coefficient for threshold voltage is carried out weight with positive temperature coefficient voltages Reference voltage.
The bandgap voltage reference circuit that a kind of linear temperature coefficient the most according to claim 1 compensates, it is characterised in that: institute State positive temperature coefficient voltages extraction module and include the 6th PMOS transistor, the 7th PMOS transistor, the 8th PMOS transistor, the first electricity Resistance, the second resistance, a NPN audion, the 2nd NPN audion, the second operational amplifier;
Wherein, the source electrode of the 6th PMOS transistor connects supply voltage VDD, and the source electrode of the 7th PMOS transistor connects supply voltage VDD, the source electrode of the 8th PMOS transistor connects supply voltage VDD, the grid of the 6th PMOS transistor and the 7th PMOS transistor Grid, the 8th PMOS transistor grid be connected;
6th PMOS transistor drain electrode be connected with colelctor electrode and the base stage of a NPN audion, the 7th PMOS transistor Drain electrode is connected with the anode of the first resistance, and the negative terminal of the first resistance and the colelctor electrode of the 2nd NPN audion and base stage are connected, and the 8th The drain electrode of PMOS transistor is connected with the anode of the second resistance;
The colelctor electrode of the negative input end of the second operational amplifier and the drain electrode of the 6th PMOS transistor, a NPN audion is connected, The anode of the positive input terminal of the second operational amplifier and the drain electrode of the 7th PMOS transistor, the first resistance is connected, and the second computing is put The outfan of big device and the grid of the 6th PMOS transistor, the grid of the 7th PMOS transistor, the grid of the 8th PMOS transistor It is connected;
The emitter stage of the oneth NPN audion is connected to ground signalling GND, and the emitter stage of the 2nd NPN audion is connected to ground connection letter Number GND, the negative terminal of the second resistance is connected to ground signalling GND.
The bandgap voltage reference circuit that a kind of linear temperature coefficient the most according to claim 2 compensates, it is characterised in that: institute State weight summation module and include the 9th PMOS transistor, the tenth PMOS transistor, the 3rd nmos pass transistor, the 3rd resistance and the 3rd Operational amplifier;
Wherein, the source electrode of the 9th PMOS transistor connects supply voltage VDD, and the source electrode of the tenth PMOS transistor connects supply voltage VDD, the 9th PMOS transistor grid and drain electrode and the grid of the tenth PMOS transistor, the drain electrode phase of the 3rd nmos pass transistor Even, the source electrode of the 3rd nmos pass transistor and the anode of the 3rd resistance are connected, and the drain electrode of the tenth PMOS transistor is brilliant with the 8th PMOS The drain electrode of body pipe, the anode of the second resistance are connected;
The anode of the negative input end of the 3rd operational amplifier and the source electrode of the 3rd nmos pass transistor, the 3rd resistance is connected, the 3rd fortune The source electrode of the positive input terminal and the drain electrode of the 4th PMOS transistor, the 5th PMOS transistor of calculating amplifier is connected, and the 3rd computing is put The outfan of big device and the grid of the 3rd nmos pass transistor are connected;
The negative terminal of the 3rd resistance is connected to ground signalling GND.
The bandgap voltage reference circuit that a kind of linear temperature coefficient the most according to any one of claim 1 to 3 compensates, its It is characterised by: described first PMOS transistor, the second PMOS transistor, the 3rd PMOS transistor and the ditch of the 5th PMOS transistor Road width WMP1、WMP2、WMP3, and WMP5Meet WMP1=WMP3, WMP2=WMP5, WMP1=9WMP5Condition.
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106383542A (en) * 2016-12-19 2017-02-08 成都信息工程大学 Non-bandgap no-resistor CMOS (Complementary Metal Oxide Semiconductors) reference source
CN113899527A (en) * 2021-12-06 2022-01-07 中国空气动力研究与发展中心低速空气动力研究所 Method for correcting surface temperature of test model
CN114137294A (en) * 2020-09-04 2022-03-04 长鑫存储技术有限公司 Voltage detection circuit and charge pump circuit
US11703527B2 (en) 2020-09-04 2023-07-18 Changxin Memory Technologies, Inc. Voltage detection circuit and charge pump circuit

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030117120A1 (en) * 2001-12-21 2003-06-26 Amazeen Bruce E. CMOS bandgap refrence with built-in curvature correction
US20050194957A1 (en) * 2004-03-04 2005-09-08 Analog Devices, Inc. Curvature corrected bandgap reference circuit and method
CN102323847A (en) * 2011-07-29 2012-01-18 中国电子科技集团公司第二十四研究所 Temperature compensation based voltage reference circuit
CN102541149A (en) * 2010-12-31 2012-07-04 无锡华润上华半导体有限公司 Reference power circuit
CN205880725U (en) * 2016-07-30 2017-01-11 合肥芯福传感器技术有限公司 Band gap voltage reference circuit of linear temperature coefficient compensation

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030117120A1 (en) * 2001-12-21 2003-06-26 Amazeen Bruce E. CMOS bandgap refrence with built-in curvature correction
US20050194957A1 (en) * 2004-03-04 2005-09-08 Analog Devices, Inc. Curvature corrected bandgap reference circuit and method
CN102541149A (en) * 2010-12-31 2012-07-04 无锡华润上华半导体有限公司 Reference power circuit
CN102323847A (en) * 2011-07-29 2012-01-18 中国电子科技集团公司第二十四研究所 Temperature compensation based voltage reference circuit
CN205880725U (en) * 2016-07-30 2017-01-11 合肥芯福传感器技术有限公司 Band gap voltage reference circuit of linear temperature coefficient compensation

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106383542A (en) * 2016-12-19 2017-02-08 成都信息工程大学 Non-bandgap no-resistor CMOS (Complementary Metal Oxide Semiconductors) reference source
CN106383542B (en) * 2016-12-19 2017-09-15 成都信息工程大学 A kind of non-bandgap non-resistance CMOS a reference sources
CN114137294A (en) * 2020-09-04 2022-03-04 长鑫存储技术有限公司 Voltage detection circuit and charge pump circuit
US11703527B2 (en) 2020-09-04 2023-07-18 Changxin Memory Technologies, Inc. Voltage detection circuit and charge pump circuit
CN113899527A (en) * 2021-12-06 2022-01-07 中国空气动力研究与发展中心低速空气动力研究所 Method for correcting surface temperature of test model
CN113899527B (en) * 2021-12-06 2022-03-01 中国空气动力研究与发展中心低速空气动力研究所 Method for correcting surface temperature of test model

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