CN207067835U - It is a kind of that there is high-order temperature compensated band gap reference voltage source circuit - Google Patents
It is a kind of that there is high-order temperature compensated band gap reference voltage source circuit Download PDFInfo
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- CN207067835U CN207067835U CN201720715246.6U CN201720715246U CN207067835U CN 207067835 U CN207067835 U CN 207067835U CN 201720715246 U CN201720715246 U CN 201720715246U CN 207067835 U CN207067835 U CN 207067835U
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Abstract
The purpose of this utility model, which is to provide, a kind of has high-order temperature compensated band gap reference voltage source circuit.According to of the present utility model there is high-order temperature compensated band gap reference voltage source circuit to include start-up circuit, biasing circuit, positive temperature current generation circuit, negative temperature current generating circuit, high order temperature compensation current generation circuit, electric current supercircuit and Bandgap Reference Voltage Generation Circuit；Wherein, the high order temperature compensation current generation circuit is used to produce high order temperature compensation current, by the way that voltage caused by high order temperature compensation current generation circuit is offseted with nonlinear temperature item in single order bandgap voltage reference, obtain that there is high-order temperature compensated band gap reference voltage source circuit.Compared with prior art, the utility model has advantages below：A small amount of component is only added on the basis of single order bandgap voltage reference, greatly simplify high-order temperature compensation circuit, on the basis of single order precision is ensured, effectively carries out high-order temperature compensated, and cost is relatively low.
Description
Technical field
Electronic technology field is the utility model is related to, more particularly to a kind of there is high-order temperature compensated bandgap voltage reference
Source circuit.
Background technology
In the prior art, band gap reference is widely applied as most widely used basic circuit in Analogous Integrated Electronic Circuits
In high-precision analog integrated circuit, such as LED drive circuit, DC/DC converters, AC/DC converters, high-precision adc or DAC
In, with the continuous development of Analogous Integrated Electronic Circuits, the characteristics such as the precision of band gap reference, Low Drift Temperature, stability are proposed more next
Higher requirement, the characteristic of the band gap reference in some circuits even directly affect the performance and essence of system most important parameters
Degree.
Heating can cause chip internal temperature to raise during the power switch pipe work integrated in integrated circuit, then band gap base
Accurate temperature characterisitic can influence the relation of systematic function and temperature, and conventional first order band-gap reference circuit is typically by with positive temperature
The difference (△ VBE) of the base emitter voltage of coefficient and the base emitter voltage (VBE) with negative temperature coefficient are pressed necessarily
Ratio is added, and is offset the temperature coefficient of the two and is obtained the bandgap voltage reference of zero-temperature coefficient, understands that △ VBE are with temperature in theoretical
Linear rise, and temperature linearity item and temperature higher order term are included in VBE, the high-order temperature compensated temperature that can be offset in VBE is high
Rank item, make reference voltage that there is lower temperature drift.
Fig. 1 and Fig. 2 respectively illustrates an exemplary bandgap voltage reference single order temperature compensation principle and high-order temperature
The schematic diagram of compensation principle.
As shown in figure 1, two dotted lines are respectively the different triode VBE difference in voltage △ VBE of two areas and one three
Pole pipe VBE voltages, it is added, is obtained according to a certain percentage with the VBE with negative temperature coefficient using the △ VBE with positive temperature coefficient
The solid line into single order band-gap reference temperature-compensation circuit VREF, i.e. Fig. 1, single order band-gap reference generally have more than ten ppm/ DEG C to several
Ten ppm/ DEG C of temperature drifts.
As shown in Fig. 2 also use one except forming single order bandgap voltage reference using VBE and △ VBE in three dotted lines
Individual nonlinear terms VNL compensates to the nonlinear terms in VBE, and nonlinear compensation voltage VNL can generally use the finger of temperature
Number, logarithm or quadratic term compensate, generally reach several ppm/ DEG C it is even lower.Because the nonlinear terms in VBE are T*
LnT forms.
However, there is problems with the existing high-order temperature compensated scheme of band-gap reference：1) compensation circuit component is excessive,
Compensation rate is added with technique, temperature, the risk of mismatch fluctuation；2) circuit design can cause in itself with mismatch compensation precision compared with
Difference；3) the high-order temperature compensated low precision of actual band-gap reference that the excessive coarse theoretical approximation of some circuits is brought.
Utility model content
The purpose of this utility model, which is to provide, a kind of has high-order temperature compensated band gap reference voltage source circuit.
According to one side of the present utility model, there is provided a kind of with high-order temperature compensated bandgap voltage reference electricity
Road, it is characterised in that including start-up circuit, biasing circuit, positive temperature current generation circuit, negative temperature current generating circuit, height
Rank temperature-compensated current generation circuit, electric current supercircuit and Bandgap Reference Voltage Generation Circuit；
Wherein, the high order temperature compensation current generation circuit is used to produce high order temperature compensation current, by by high-order
Voltage caused by temperature-compensated current generation circuit offsets with nonlinear temperature item in single order bandgap voltage reference, is had
There is high-order temperature compensated band gap reference voltage source circuit.
Compared with prior art, the utility model has advantages below：According to of the present utility model there is high-order temperature to mend
The band gap reference voltage source circuit repaid makes it by increasing high-order temperature compensation circuit on the basis of single order bandgap voltage reference
Caused high-order compensation voltage can effectively offset the nonlinear terms temperature coefficient in single order bandgap voltage reference, so as to be had
High-order temperature compensated band gap reference voltage source circuit；Also, there is high-order temperature compensated band gap according to of the present utility model
Reference voltage source circuit only adds a small amount of component on the basis of single order bandgap voltage reference, greatly simplify high-order temperature
Compensation circuit is spent, so as to avoid, due to introducing more by technique, temperature, mismatch and the deviation introduced, ensureing single order precision
On the basis of, effectively carry out high-order temperature compensated, and cost is relatively low.
Brief description of the drawings
It is of the present utility model by reading the detailed description made to non-limiting example made with reference to the following drawings
Other features, objects and advantages will become more apparent upon：
Fig. 1 shows the schematic diagram of an exemplary bandgap voltage reference single order temperature compensation principle；
Fig. 2 shows the schematic diagram of a high-order temperature compensated principle of exemplary bandgap voltage reference；
Fig. 3 is shown has high-order temperature compensated band-gap reference electricity according to a preferred embodiment of the present utility model
The schematic diagram of source circuit.
Same or analogous reference represents same or analogous part in accompanying drawing.
Embodiment
The utility model is described in further detail below in conjunction with the accompanying drawings.
Fig. 3 illustrates has high-order temperature compensated band-gap reference according to a preferred embodiment of the present utility model
The schematic diagram of voltage source circuit.
Reference picture 3, the band gap reference voltage source circuit include start-up circuit 1, biasing circuit 2, positive temperature current and produced
Circuit 3, negative temperature current generating circuit 4, high order temperature compensation current generation circuit 5 and electric current supercircuit and band-gap reference electricity
Press generation circuit 6.
Wherein, the start-up circuit 1 is used in power supply electrifying, and start-up circuit helps reference circuit to depart from " zero " merger
Point, normal operating conditions is made it into, after benchmark is established, start-up circuit is turned off.
Wherein, the start-up circuit 1 includes starting resistance R1, NMOS tube：MN1, MN2 and MN5.Wherein, MN1 and MN2 groups
Into current mirror, MN5 is lower trombone slide.
Wherein, the one end for starting resistance R1 is connected with power supply, the other end and MN1 drain and gate, and MN2 grid
It is connected；MN2 drain electrode is connected with the grid of MP3 and MP5 in MP1 grid, positive temperature current generation circuit 3 in biasing circuit 2；
MN5 drain electrode is connected with MN1 and MN2 grid, and MN5 grid is connected with reference voltage V BG；MN1, MN2 and MN5 source electrode with
Ground is connected.
Wherein, the common grid level in the PMOS cascode amplifiers on the basis of the biasing circuit 2 is used in circuit provides grid
Pole bias voltage.The biasing circuit 2 includes PMOS：MP1 and MP2, NMOS tube：MN3 and MN4.Wherein, MN3 and MN4 compositions
Current mirror.
Wherein, MP1 and MP2 source electrode is connected with power supply, MP1 drain electrode and MN3 grid, drain electrode and MN4 grid
It is connected；MN3 and MN4 source electrode is connected to the ground, and MN4 drain electrode is connected with MP2 grid and drain electrode.
Wherein, the positive temperature current generation circuit 3 is used to produce positive temperature coefficient electric current IPTAT.The positive temperature electricity
Stream generation circuit 3 includes PMOS MP3, MP4, MP5 and MP6, amplifier OP1, PNP pipe：Q1 and Q2, and resistance R2.Wherein,
MP3 and MP4, MP5 and MP6 separately constitute cascode amplifier.
Wherein, OP1 normal phase input end is connected with resistance R2 one end, MP4 drain electrode, OP1 negative-phase input and Q2
The drain electrode of emitter stage, MP6 be connected, drain electrode, biasing of the OP1 output end with MN2 in MP3 and MP5 grid, start-up circuit 1
MP1 grid is connected in circuit 2；MP4 and MP6 grid is connected with MP2 grid, drain electrode in start-up circuit 1；MP3's and MP5
The source electrode respectively with MP4 and MP6 that drains is connected；The resistance R2 other end is connected with Q1 emitter stage；Q1 and Q2 base stage and collection
Electrode is all connected to the ground.
Wherein, the negative temperature current generating circuit 4 is used to produce negative temperature parameter current ICTAT.The negative temperature electric current
Generation circuit 4 includes amplifier OP2, PMOS：MP7 and MP8, and resistance R3, the negative temperature current generating circuit 4 are multiplexed
Q2 in positive temperature current generation circuit 3.
Wherein, OP2 normal phase input end and the drain electrode of resistance R3 one end, MP8, and high order temperature compensation current produce
One end of resistance R4 in circuit 5 is connected, and the R3 other end is connected to the ground；Amplifier OP2 negative-phase input and positive temperature system
The drain electrode of Q2 emitter stage, OP1 negative-phase input and MP6 is connected in number current generating circuits 3, OP2 output end with
MP7 grid, MP9, and MP13 are connected；MP7 source electrode is connected with power supply, and its drain electrode is connected with MP8 source electrode；MP8 grid
Pole is connected with MP2 grid.
Wherein, the high order temperature compensation current generation circuit 5 is used to produce high order temperature compensation current, by by high-order
Voltage caused by temperature-compensated current generation circuit 5 offsets with nonlinear temperature item in single order bandgap voltage reference, obtains
With high-order temperature compensated band gap reference voltage source circuit.
Specifically, the high order temperature compensation current generation circuit 5 is flowed through just by being multiplexed in single order band-gap reference circuit
Three poles of the triode with flowing through zero-temperature coefficient in high order temperature compensation current generation circuit 5 in temperature current generation circuit 3
The difference of the voltage of pipe so that the difference offsets with nonlinear temperature item in single order bandgap voltage reference, so as to be had
High-order temperature compensated band gap reference voltage source circuit.
The high order temperature compensation current generation circuit 5 includes resistance R4, PNP pipe Q3, PMOS：MP9、MP10、MP11
And MP12, the high order temperature compensation current generation circuit 5 have been multiplexed Q2 and negative temperature electricity in positive temperature current generation circuit 3
Flow the amplifier OP2 in generation circuit 4.Wherein, MP9, MP10, MP11 and MP12 form cascode amplifier.
Wherein, resistance R4 one end and R3 one end, amplifier OP2 normal phase input ends and MP8 drain electrode are connected, electricity
The resistance R4 other end is connected with the drain electrode of Q3 emitter stage, MP10 and MP12；Q3 base stage and colelctor electrode is connected to the ground；MP10 and
MP12 grid is connected with MP8 grid, MP4 grid, MP6 grid and MP2 grid and drain electrode, MP10 and MP12
Drain electrode of the source electrode respectively with MP9 and MP11 be connected；MP9 grid and MP7 grid, amplifier OP2 output end are connected to
Together；MP11 grid is connected with the output end of MP1, MP3, MP5 grid, MN2 drain electrodes and amplifier OP1, MP9 and MP11
Source electrode be connected with power supply.
Wherein, the electric current supercircuit and Bandgap Reference Voltage Generation Circuit 6 are used for negative temperature parameter current, positive temperature
Degree coefficient current and compensation electric current are superimposed according to a certain percentage, and are flowed through resistance R5 and produced bandgap voltage reference VBG。
Characterized in that, the electric current supercircuit and Bandgap Reference Voltage Generation Circuit include PMOS：MP13、
MP14, MP15, MP16, and resistance R5.Wherein, MP13, MP14, MP15 and MP16 form cascode amplifier.
Wherein, MP13 grid is connected with MP7 and MP9 grid；MP15 grid and MP1, MP3, MP5, MP11 grid
Extremely it is connected；MP13 and MP15 source electrode is connected with power supply, MP13 drain electrode and MP15 drain respectively with MP14 source electrode and
MP16 source electrode is connected；MP14 and MP16 grid is connected with MP2, MP4, MP6, MP8, MP10, MP12 grid, MP14 and
MP16 drain electrode is connected with resistance R5 one end, MN5 grid；The resistance R5 other end is connected to the ground.
There is high-order temperature compensated bandgap voltage reference according to of the present utility model to elaborate with reference to Fig. 3
The high-order temperature compensated principle and implementation method of circuit.
Reference picture 3, during startup, supply voltage rises, and R1 branch currents are mirrored to MN2 by current mirror, MN2 by MP3 with
MP5 grid voltage drags down, and positive temperature coefficient current generating circuit is departed from " zero " and annexs point, positive temperature current generation circuit is built
It is vertical, VBE2Voltage is 0.7V or so, and now amplifier OP2 positive input voltage is zero, amplifier OP2 output ends by MP7 and
MP9 and MP13 grid voltage is dragged down, and negative temperature parameter current generation circuit is established.Meanwhile MP2 is cascode amplifier
Grid level provides gate bias, reference voltage V altogetherBGAfter foundation, MN5 is opened and is dragged down MN1 and MN2 grid, start completion.
During work, amplifier OP1 output end is positive and negative mutually defeated by adjusting MP3 and MP5 grid amplifier OP1
Enter that terminal voltage is equal, therefore the electric current by R2 can be obtained, i.e., with positive temperature coefficient electric current IPTATFor：
Wherein n is Q1 and Q2 number ratio.
Similarly, amplifier OP2 is defeated by the normal phase input end voltage and negative for adjusting MP7 grid amplifier OP2
Enter terminal voltage VBE2It is equal, thus resistance R3 electric current, i.e., the electric current I with negative temperature coefficientCTATFor：
If without high order temperature compensation current generation circuit 5, by electric current supercircuit by IPTATElectric current and ICTATIt is added,
Again pass through resistance R5 and obtain single order temperature compensation bandgap reference voltage and be：
VBEThe relation of voltage and temperature is：
Wherein, VG0Represent the bandgap voltage reference of silicon；T0Represent room temperature；VBE0Represent V during room temperatureBEVoltage；γ represent with
The related temperature coefficient of technique, value are 3.6~4；JcRepresent BJT Collector Current Densities.JcRelation with temperature is：
By JcBring into formula (4) and obtain：
It may thus be appreciated that in formula (3), VBE2Contain temperature higher order term in.
If the electric current that BJT flows through is zero-temperature coefficient electrical current, α=0, if BJT flows through IPTATElectric current then α=1.R4 resistance
A terminal voltage value and flow through IPTATThe V of the Q2 pipes of electric currentBEMagnitude of voltage is equal, and another terminal voltage of R4 resistance, which is equal to, flows through zero temperature
Spend the Q3 of coefficient current VBEVoltage, therefore, resistance R4 electric current is flowed through, that is, compensating electric current is：
Wherein, m is the number ratio of Q3 pipes and Q2 pipes；A2, A3 are respectively the area of Q2 pipes and Q3 pipes.Can from formula (7)
To find out IPTAT+ICTAT+2INLFor zero-temperature coefficient amount, and IPTATFor positive temperature coefficient amount, therefore compensate electric current INLWith T*
LnT forms, this counteracting V can be utilizedBEMiddle nonlinear terms.
I is calculated by formula (6)NLI can also be drawnNLWith the relation of temperature, using flowing through IPTATThe Q2 of electric current VBE2Electricity
Pressure subtracts the V for the Q3 for flowing through zero-temperature coefficientBE3Voltage, have：
Because the Q2 electric currents flowed through are IPTAT, and the electric current that Q3 flows through is IPTAT+ICTAT+2INL, so VBE2_0It is not equal to
VBE3_0。
Preferably, in order that this two can make an appointment, IQ2 and IQ3 represent to flow through Q2 and Q3 electric current respectively, it is ensured that IQ2:
IQ3=A2:A3=1:m.By to the V in high-order compensation principleBE2_0With VBE3_0The condition of making an appointment has carried out further strict control
System, i.e. IQ2：IQ3=A3:A2=1:M so that compensation electric current this small electric current is as few as possible to be lacked of proper care or theoretical point
The very poor influence of compensation current precision caused by not rigorous approximation in analysis.
When adjusting single order band-gap reference, IPTATWith ICTATThe approximately equal in normal temperature, thus can set m value be 2,
So that VBE2_0With VBE3_0Make an appointment, finally obtain INLFor：
Due to compensating electric current INLWith IPTATAnd ICTATCompared to very little, therefore single current mirror mirror image should not be used, because compared with
Small electric current causes current mirror to be operated in sub-threshold region, and threshold voltage (VTH) mismatch causes electric current to have exponent relation increasing with VGS
It is long, it is bigger to influence of the influence of electric current than being operated in strong inversion area, because the metal-oxide-semiconductor electric current of strong inversion area work is in VGS
Quadratic relationship increases, therefore using cascade the pipe MP7 and MP8 in original negative temperature parameter current generation circuit, by INL
With ICTATBeing stacked adduction, mirror image is gone out together, so that MP7 and MP8 is operated in strong inversion area.Add INLRevised Q3
Collector current is：
IC3=IPTAT+ICTAT+2INL (10)
Electric current in MP7 is ICTAT+INL, and mirror image is to the MP13 in electric current supercircuit；Electric current is in MP5 simultaneously
IPTAT, and mirror image makes R4=R3 to the MP15 in electric current supercircuit, MP13 electric currents and MP15 electric currents after overcurrent is superimposed
Afterwards, zero-temperature coefficient electrical current I is obtainedconstantFor：
This current flowing resistance R5, and after making R5=R3, the obtained high-order temperature compensated bandgap voltage reference that has is：
According to of the present utility model there is high-order temperature compensated band gap reference voltage source circuit to pass through in single order band gap base
Increase high-order temperature compensation circuit on the basis of reference voltage source, its caused high-order compensation voltage is effectively offset single order band gap base
Nonlinear terms temperature coefficient in quasi- voltage, so as to obtain that there is high-order temperature compensated band gap reference voltage source circuit；Also,
There is high-order temperature compensated band gap reference voltage source circuit only in single order bandgap voltage reference base according to of the present utility model
A small amount of component is added on plinth, greatly simplify high-order temperature compensation circuit, so as to avoid due to introducing more by work
Skill, temperature, mismatch and the deviation introduced, on the basis of single order precision is ensured, effectively carry out it is high-order temperature compensated, and into
This is relatively low.
It should be noted that the high-order temperature compensated band gap reference voltage source circuit that has shown in Fig. 3 is only to illustrate this
The preferable examples of utility model, not limit scope of protection of the utility model.It is any to be carried out according to the utility model concept
, including PNP pipe is exchanged into NPN and managed, PMOS is exchanged into NMOS tube, change to the local structure of circuit, in this practicality
Change under new offer design to circuit implementing method, and replacement, modification or the modification etc. of other unsubstantialities, are belonged to
Within scope of protection of the utility model.
It is obvious to a person skilled in the art that the utility model is not limited to the details of above-mentioned one exemplary embodiment, and
And in the case of without departing substantially from spirit or essential attributes of the present utility model, it can realize that this practicality is new in other specific forms
Type.Therefore, no matter from the point of view of which point, embodiment all should be regarded as exemplary, and is nonrestrictive, this practicality is new
The scope of type limits by appended claims rather than described above, it is intended that the equivalency fallen in claim is contained
All changes in justice and scope are included in the utility model.Any reference in claim should not be considered as limitation
Involved claim.Furthermore, it is to be understood that the word of " comprising " one is not excluded for other units or step, odd number is not excluded for plural number.System
The multiple units or device stated in claim can also be realized by a unit or device by software or hardware.The
One, the second grade word is used for representing title, and is not offered as any specific order.
Claims (8)
1. a kind of have high-order temperature compensated band gap reference voltage source circuit, it is characterised in that including start-up circuit, biased electrical
Road, positive temperature current generation circuit, negative temperature current generating circuit, high order temperature compensation current generation circuit, electric current superposition electricity
Road and Bandgap Reference Voltage Generation Circuit；
Wherein, the high order temperature compensation current generation circuit is arranged to produce high order temperature compensation current, with by by the height
Voltage offsets with nonlinear temperature item in single order bandgap voltage reference caused by rank temperature-compensated current generation circuit.
2. band gap reference voltage source circuit according to claim 1, it is characterised in that the start-up circuit includes starting electricity
Hinder R1, NMOS tube：MN1, MN2 and MN5；
Wherein, the one end for starting resistance R1 is connected with power supply, the other end and MN1 drain and gate, and MN2 grid phase
Even；MN2 drain electrode is connected with the grid of MP3 and MP5 in MP1 grid, positive temperature current generation circuit in biasing circuit；MN5
Drain electrode be connected with MN1 and MN2 grid, MN5 grid is connected with reference voltage V BG；MN1, MN2 and MN5 source electrode and ground
It is connected.
3. band gap reference voltage source circuit according to claim 1, it is characterised in that the biasing circuit includes PMOS
Pipe：MP1 and MP2, NMOS tube：MN3 and MN4；
Wherein, MP1 and MP2 source electrode is connected with power supply, and MP1 drain electrode is connected with MN3 grid, drain electrode and MN4 grid；
MN3 and MN4 source electrode is connected to the ground, and MN4 drain electrode is connected with MP2 grid and drain electrode.
4. band gap reference voltage source circuit according to claim 1, it is characterised in that the positive temperature current generation circuit
Including PMOS：MP3, MP4, MP5 and MP6, amplifier OP1, PNP pipe：Q1 and Q2, and resistance R2；
Wherein, OP1 normal phase input end is connected with resistance R2 one end, MP4 drain electrode, OP1 negative-phase input and Q2 hair
The drain electrode of emitter-base bandgap grading, MP6 is connected, and OP1 output end is connected with the MP3 and MP5 drain electrode of grid, MN2, MP1 grid；MP4 and
MP6 grid is connected with MP2 grid, drain electrode；Source electrode of the MP3 and MP5 drain electrode respectively with MP4 and MP6 is connected；Resistance R2's
The other end is connected with Q1 emitter stage；Q1 and Q2 base stage and colelctor electrode is all connected to the ground.
5. band gap reference voltage source circuit according to claim 1, it is characterised in that the negative temperature current generating circuit
Including amplifier OP2, PMOS：MP7 and MP8, and resistance R3, the negative temperature current generating circuit have been multiplexed positive temperature electricity
Flow the Q2 in generation circuit；
Wherein, OP2 normal phase input end and the drain electrode of resistance R3 one end, MP8, and high order temperature compensation current generation circuit
In resistance R4 one end be connected, the R3 other end is connected to the ground；Amplifier OP2 negative-phase input and Q2 emitter stage, OP1
Negative-phase input and MP6 drain electrode be connected, MP9 in OP2 output end and MP7 grid, high-order temperature compensation circuit,
And electric current supercircuit MP13 is connected；MP7 source electrode is connected with power supply, and its drain electrode is connected with MP8 source electrode；MP8 grid
It is connected with MP2 grid.
6. band gap reference voltage source circuit according to claim 1, it is characterised in that the high order temperature compensation current production
Raw circuit includes resistance R4, PNP pipe Q3, PMOS：MP9, MP10, MP11 and MP12, the high order temperature compensation current produce
The amplifier OP2 in Q2 and negative temperature current generating circuit in the positive temperature current generation circuit of circuit multiplexer；
Wherein, resistance R4 one end and R3 one end, amplifier OP2 normal phase input ends and MP8 drain electrode are connected, resistance R4
The other end be connected with the drain electrode of Q3 emitter stage, MP10 and MP12；Q3 base stage and colelctor electrode is connected to the ground；MP10 and MP12
Grid and MP8 grid, MP4 grid, MP6 grid and MP2 grid and drain electrode be connected, MP10 and MP12 source
Drain electrode of the pole respectively with MP9 and MP11 is connected；MP9 grid and MP7 grid, amplifier OP2 output end link together；
MP11 grid is connected with the output end of MP1, MP3, MP5 grid, MN2 drain electrodes and amplifier OP1, MP9 and MP11 source
Pole is connected with power supply.
7. band gap reference voltage source circuit according to claim 6, it is characterised in that Q3 and Q2 number ratio is represented with m,
A2 and A3 represents Q2 and Q3 area respectively, and IQ2 and IQ3 represent to flow through Q2 and Q3 electric current respectively, then IQ2:IQ3=A2:A3
=1:m.
8. band gap reference voltage source circuit according to claim 1, it is characterised in that the electric current supercircuit and band gap
Reference voltage generating circuit includes PMOS：MP13, MP14, MP15, MP16, and resistance R5；
Wherein, MP13 grid is connected with MP7 and MP9 grid；The grid phase of MP15 grid and MP1, MP3, MP5, MP11
Even；MP13 and MP15 source electrode is connected with power supply, MP13 drain electrode and MP15 drain respectively with MP14 source electrode and MP16
Source electrode is connected；MP14 and MP16 grid is connected with MP2, MP4, MP6, MP8, MP10, MP12 grid, MP14 and MP16 leakage
Pole is connected with resistance R5 one end, MN5 grid；The resistance R5 other end is connected to the ground.
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| CN201720715246.6U CN207067835U (en) | 2017-06-20 | 2017-06-20 | It is a kind of that there is high-order temperature compensated band gap reference voltage source circuit |
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| CN201720715246.6U CN207067835U (en) | 2017-06-20 | 2017-06-20 | It is a kind of that there is high-order temperature compensated band gap reference voltage source circuit |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108549454A (en) * | 2018-05-22 | 2018-09-18 | 淮阴师范学院 | A kind of low-power consumption, high-precision reference voltage source |
| CN108897365A (en) * | 2018-08-27 | 2018-11-27 | 桂林电子科技大学 | A kind of high-precision current model reference voltage source |
| CN111837087A (en) * | 2020-03-11 | 2020-10-27 | 深圳市汇顶科技股份有限公司 | Temperature sensor, electronic device, and temperature detection system |
| US10958227B2 (en) | 2019-05-07 | 2021-03-23 | Analog Devices, Inc. | Amplifier nonlinear offset drift correction |
-
2017
- 2017-06-20 CN CN201720715246.6U patent/CN207067835U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108549454A (en) * | 2018-05-22 | 2018-09-18 | 淮阴师范学院 | A kind of low-power consumption, high-precision reference voltage source |
| CN108897365A (en) * | 2018-08-27 | 2018-11-27 | 桂林电子科技大学 | A kind of high-precision current model reference voltage source |
| US10958227B2 (en) | 2019-05-07 | 2021-03-23 | Analog Devices, Inc. | Amplifier nonlinear offset drift correction |
| CN111837087A (en) * | 2020-03-11 | 2020-10-27 | 深圳市汇顶科技股份有限公司 | Temperature sensor, electronic device, and temperature detection system |
| CN111837087B (en) * | 2020-03-11 | 2022-01-25 | 深圳市汇顶科技股份有限公司 | Temperature sensor, electronic device, and temperature detection system |
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