CN108549454A - A kind of low-power consumption, high-precision reference voltage source - Google Patents
A kind of low-power consumption, high-precision reference voltage source Download PDFInfo
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- CN108549454A CN108549454A CN201810493410.2A CN201810493410A CN108549454A CN 108549454 A CN108549454 A CN 108549454A CN 201810493410 A CN201810493410 A CN 201810493410A CN 108549454 A CN108549454 A CN 108549454A
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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Abstract
The present invention relates to the power technique fields more particularly to a kind of low-power consumption, high-precision reference voltage source in analog circuit.A kind of low-power consumption, high-precision reference voltage source in the present invention, including core circuit, compensation circuit and supercircuit；The core circuit generates positive temperature coefficient electric current, and the compensation circuit generates positive temperature coefficient electric current, and the positive temperature coefficient electric current and negative temperature parameter current are superimposed and generate reference voltage V REF by the supercircuit.The present invention is improved on the basis of traditional reference voltage generating circuit, has lower power consumption and higher output accuracy.
Description
Technical field
The present invention relates to the power technique fields more particularly to a kind of low-power consumption, high-precision base in analog circuit
Reference voltage source.
Background technology
Reference voltage source is the important module in Analog Circuit Design, mixed-signal circuit design and Digital Design, it
The reference voltage not changed with temperature and supply voltage is provided for system.In reference voltage generating circuit, output accuracy and work(
It consumes the two parameters and conclusive effect, high-precision, low-power consumption, high PSRR, low temperature is played to the quality of power source performance
The reference voltage generating circuit for spending coefficient is most important for entire circuit.Traditional band gap reference is by having two
There is the voltage of Positive and Negative Coefficient Temperature to carry out the reference voltage that linear superposition can be obtained zero-temperature coefficient.Two double pole triodes
The difference of base emitter voltage be to have negative with absolute temperature is proportional to, the base emitter voltage of bipolar transistor
Temperature coefficient property, it is electric with the benchmark unrelated with temperature change is obtained in certain proportion using both voltages of different nature
Pressure.However, since traditional reference voltage generating circuit only carries out linear compensation, low precision, when temperature range changes greatly,
The voltage of generation is usually not satisfactory, especially in some require relatively high circuit to voltage accuracy, is produced after linear compensation
Raw voltage far can not be met the requirements.Some improved reference voltage sources, which mostly use, increases backfeed loop or source compensated by using high-order curvature
The modes such as circuit, circuit structure is complex, and power consumption is higher, is based on this, and the present invention provides one kind to have compared with height output precision
With the reference voltage source of lower power consumption.
Invention content
The purpose of the present invention is to solve the problems that reference voltage source stability is poor, power consumption is high in the prior art, provide
A kind of reference voltage source of higher stability and lower power consumption.
The present invention provides a kind of low-power consumption, high-precision reference voltage source, including core circuit, compensation circuit and superpositions
Circuit；The core circuit generates positive temperature coefficient electric current, and the compensation circuit generates positive temperature coefficient electric current, the superposition electricity
The positive temperature coefficient electric current and negative temperature parameter current are superimposed and generate reference voltage V REF by road.The core circuit packet
It includes：Metal-oxide-semiconductor M1, M2, M3, M4, operational amplifier OP1, resistance R1, triode Q1, Q2；The compensation circuit includes：Metal-oxide-semiconductor
M5, M6, M7, M8, M9, M11, M12, resistance R2 and triode Q3；The supercircuit includes metal-oxide-semiconductor M10 and resistance R3；It is described
The source electrode of metal-oxide-semiconductor M1, M3, M5, M7, M9, M10 are all connected with supply voltage, and the grid of described metal-oxide-semiconductor M1, M3, M5, M7 are connected
And the output end of operational amplifier OP1 is connected, the grid of described metal-oxide-semiconductor M2, M4, M6, M8 are connected；The source of the metal-oxide-semiconductor M2
Pole connects the drain electrode of metal-oxide-semiconductor M1, the normal phase input end of drain electrode connection operational amplifier OP1 and one end of resistance R1, resistance R1
Other end connecting triode Q1 emitter；The drain electrode of the source electrode connection metal-oxide-semiconductor M2 of the metal-oxide-semiconductor M4, drain electrode connection operation
The inverting input of amplifier OP1 and the emitter of triode Q2, the base stage of triode Q1, Q2 are connected and are grounded, the two
Collector is grounded；The drain electrode of the source electrode connection metal-oxide-semiconductor M5 of the metal-oxide-semiconductor M6, the drain electrode of drain electrode connection metal-oxide-semiconductor M11, grid with
And the grid of metal-oxide-semiconductor M12, the emitter of the source electrode connecting triode Q3 of metal-oxide-semiconductor M12, the base stage and collector of triode Q3 are equal
Ground connection, the source electrode of metal-oxide-semiconductor M12 are grounded by resistance R2；The drain electrode of the source electrode connection metal-oxide-semiconductor M7 of the metal-oxide-semiconductor M8, drain electrode connection
Reference voltage output end VREF；The grid of described metal-oxide-semiconductor M9, M10 are connected and connect the leakage of the drain electrode and metal-oxide-semiconductor M12 of metal-oxide-semiconductor M9
The drain electrode of pole, metal-oxide-semiconductor M10 is grounded by resistance R3, and the drain electrode end of metal-oxide-semiconductor is reference voltage output end VREF；The metal-oxide-semiconductor
M1, M2, M3, M4, M5, M6, M7, M8, M9 are PMOS tube, and described metal-oxide-semiconductor M11, M12 are NMOS tube.
A kind of low-power consumption provided by the present invention, high-precision reference voltage source, efficiently solve base in the prior art
The problem that reference voltage source stability is poor, power consumption is high, compared with traditional reference voltage source circuit, said reference voltage source circuit tool
There are higher output stability and precision, and compared with existing improvement circuit structure, the structure of foregoing circuit is simple, uses
Less operational amplifier, saves power consumption.
Description of the drawings
Fig. 1 is a kind of low-power consumption provided by the invention, high-precision reference voltage source circuit structural schematic diagram.
Fig. 2 is the simulation architecture figure of reference voltage source circuit output voltage provided by the invention.
Specific implementation mode
The present invention provides a kind of low-power consumption, high-precision reference voltage source, for make the purpose of the present invention, technical solution and
Advantage is clearer, clear, and the present invention is described in more detail for the embodiment that develops simultaneously referring to the drawings.It should be appreciated that herein
Described specific embodiment is only used to explain the present invention, is not intended to limit the present invention.
As shown in fig. 1, a kind of low-power consumption, high-precision reference voltage source, including core circuit, compensation circuit and superposition electricity
Road；The core circuit generates positive temperature coefficient electric current, and the compensation circuit generates positive temperature coefficient electric current, the supercircuit
The positive temperature coefficient electric current and negative temperature parameter current are superimposed and generate reference voltage V REF.The core circuit includes：
Metal-oxide-semiconductor M1, M2, M3, M4, operational amplifier OP1, resistance R1, triode Q1, Q2；The compensation circuit includes：Metal-oxide-semiconductor M5,
M6, M7, M8, M9, M11, M12, resistance R2 and triode Q3；The supercircuit includes metal-oxide-semiconductor M10 and resistance R3；The MOS
The source electrode of pipe M1, M3, M5, M7, M9, M10 are all connected with supply voltage, and the grid of described metal-oxide-semiconductor M1, M3, M5, M7 are connected and connect
The output end of operational amplifier OP1 is connect, the grid of described metal-oxide-semiconductor M2, M4, M6, M8 are connected；The source electrode of the metal-oxide-semiconductor M2 connects
The drain electrode of metal-oxide-semiconductor M1, the normal phase input end of drain electrode connection operational amplifier OP1 and one end of resistance R1 are connect, resistance R1's is another
The emitter of one end connecting triode Q1；The drain electrode of the source electrode connection metal-oxide-semiconductor M2 of the metal-oxide-semiconductor M4, drain electrode connection operation amplifier
The inverting input of device OP1 and the emitter of triode Q2, the base stage of triode Q1, Q2 are connected and are grounded, the current collection of the two
Extremely it is grounded；The drain electrode of the source electrode connection metal-oxide-semiconductor M5 of the metal-oxide-semiconductor M6, the drain electrode of drain electrode connection metal-oxide-semiconductor M11, grid and
The grid of metal-oxide-semiconductor M12, the emitter of the source electrode connecting triode Q3 of metal-oxide-semiconductor M12, the base stage and collector of triode Q3 connect
The source electrode on ground, metal-oxide-semiconductor M12 is grounded by resistance R2；The drain electrode of the source electrode connection metal-oxide-semiconductor M7 of the metal-oxide-semiconductor M8, drain linker
Quasi- voltage output end VREF；The grid of described metal-oxide-semiconductor M9, M10 are connected and connect the leakage of the drain electrode and metal-oxide-semiconductor M12 of metal-oxide-semiconductor M9
The drain electrode of pole, metal-oxide-semiconductor M10 is grounded by resistance R3, and the drain electrode end of metal-oxide-semiconductor is reference voltage output end VREF；The metal-oxide-semiconductor
M1, M2, M3, M4, M5, M6, M7, M8, M9 are PMOS tube, and described metal-oxide-semiconductor M11, M12 are NMOS tube.
In said reference voltage source circuit, the bias current for flowing through resistance R1 is flowed through by current mirror action generation
The drain current for crossing metal-oxide-semiconductor M8 is positive temperature coefficient electric current, and the electric current for flowing through metal-oxide-semiconductor M11 source terminals is VBE3/R2, to
The electric current for flowing through metal-oxide-semiconductor M12 source terminals is negative temperature parameter current, flows through metal-oxide-semiconductor M10 drain electrodes by current mirror action again
The electric current at end is also negative temperature parameter current, so as to the zero-temperature coefficient that is superimposed of parameter by adjusting component
Reference voltage V REF.The simulation result diagram of Fig. 2 is supply voltage when being respectively 2.6V, 3.3V, 4V output voltage.With traditional base
Reference voltage source circuit is compared, and said reference voltage source circuit has higher output stability and precision, and changes with existing
It is compared into circuit structure, the structure of foregoing circuit is simple, using less operational amplifier, saves power consumption.
It should be understood that the application of the present invention is not limited to the above for those of ordinary skills can
With improvement or transformation based on the above description, all these modifications and variations should all belong to the guarantor of appended claims of the present invention
Protect range.
Claims (2)
1. a kind of low-power consumption, high-precision reference voltage source, which is characterized in that including core circuit, compensation circuit and superposition electricity
Road；The core circuit generates positive temperature coefficient electric current, and the compensation circuit generates positive temperature coefficient electric current, the supercircuit
The positive temperature coefficient electric current and negative temperature parameter current are superimposed and generate reference voltage V REF.
2. a kind of reference voltage source as described in claim 1, which is characterized in that the core circuit includes：Metal-oxide-semiconductor M1, M2,
M3, M4, operational amplifier OP1, resistance R1, triode Q1, Q2；The compensation circuit includes：Metal-oxide-semiconductor M5, M6, M7, M8, M9,
M11, M12, resistance R2 and triode Q3；The supercircuit includes metal-oxide-semiconductor M10 and resistance R3；The metal-oxide-semiconductor M1, M3, M5,
The source electrode of M7, M9, M10 are all connected with supply voltage, and the grid of described metal-oxide-semiconductor M1, M3, M5, M7 are connected and connect operation amplifier
The grid of the output end of device OP1, described metal-oxide-semiconductor M2, M4, M6, M8 is connected；The source electrode connection metal-oxide-semiconductor M1's of the metal-oxide-semiconductor M2
Drain electrode, the normal phase input end of drain electrode connection operational amplifier OP1 and one end of resistance R1, the other end of resistance R1 connect three poles
The emitter of pipe Q1；The drain electrode of the source electrode connection metal-oxide-semiconductor M2 of the metal-oxide-semiconductor M4, the reverse phase of drain electrode connection operational amplifier OP1 are defeated
Enter the emitter of end and triode Q2, the base stage of triode Q1, Q2 are connected and are grounded, and the collector of the two is grounded；It is described
The drain electrode of the source electrode connection metal-oxide-semiconductor M5 of metal-oxide-semiconductor M6, the drain electrode of drain electrode connection metal-oxide-semiconductor M11, the grid of grid and metal-oxide-semiconductor M12,
The emitter of the source electrode connecting triode Q3 of metal-oxide-semiconductor M12, the base stage and collector of triode Q3 are grounded, the source of metal-oxide-semiconductor M12
Pole is grounded by resistance R2；The drain electrode of the source electrode connection metal-oxide-semiconductor M7 of the metal-oxide-semiconductor M8, drain electrode connection reference voltage output end
VREF；The grid of described metal-oxide-semiconductor M9, M10 are connected and connect the drain electrode of the drain electrode and metal-oxide-semiconductor M12 of metal-oxide-semiconductor M9, metal-oxide-semiconductor M10's
Drain electrode is grounded by resistance R3, and the drain electrode end of metal-oxide-semiconductor is reference voltage output end VREF；The metal-oxide-semiconductor M1, M2, M3, M4,
M5, M6, M7, M8, M9 are PMOS tube, and described metal-oxide-semiconductor M11, M12 are NMOS tube.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810493410.2A CN108549454A (en) | 2018-05-22 | 2018-05-22 | A kind of low-power consumption, high-precision reference voltage source |
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| CN201810493410.2A CN108549454A (en) | 2018-05-22 | 2018-05-22 | A kind of low-power consumption, high-precision reference voltage source |
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| CN108549454A true CN108549454A (en) | 2018-09-18 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000066749A (en) * | 1998-08-03 | 2000-03-03 | Advanced Micro Devices Inc | Reference voltage generation circuit |
| CN1635435A (en) * | 2003-12-26 | 2005-07-06 | 上海贝岭股份有限公司 | Energy gap reference voltage source noncorrelating to resistor absolute value |
| CN101697086A (en) * | 2009-10-26 | 2010-04-21 | 北京交通大学 | Sub-threshold reference source compensated by adopting electric resistance temperature |
| US20140077789A1 (en) * | 2012-09-20 | 2014-03-20 | Novatek Microelectronics Corp. | Bandgap Reference Circuit and Self-Referenced Regulator |
| CN105022441A (en) * | 2014-04-30 | 2015-11-04 | 中国科学院声学研究所 | Temperature-independent current reference |
| CN207067835U (en) * | 2017-06-20 | 2018-03-02 | 上海灿瑞科技股份有限公司 | It is a kind of that there is high-order temperature compensated band gap reference voltage source circuit |
-
2018
- 2018-05-22 CN CN201810493410.2A patent/CN108549454A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000066749A (en) * | 1998-08-03 | 2000-03-03 | Advanced Micro Devices Inc | Reference voltage generation circuit |
| CN1635435A (en) * | 2003-12-26 | 2005-07-06 | 上海贝岭股份有限公司 | Energy gap reference voltage source noncorrelating to resistor absolute value |
| CN101697086A (en) * | 2009-10-26 | 2010-04-21 | 北京交通大学 | Sub-threshold reference source compensated by adopting electric resistance temperature |
| US20140077789A1 (en) * | 2012-09-20 | 2014-03-20 | Novatek Microelectronics Corp. | Bandgap Reference Circuit and Self-Referenced Regulator |
| CN105022441A (en) * | 2014-04-30 | 2015-11-04 | 中国科学院声学研究所 | Temperature-independent current reference |
| CN207067835U (en) * | 2017-06-20 | 2018-03-02 | 上海灿瑞科技股份有限公司 | It is a kind of that there is high-order temperature compensated band gap reference voltage source circuit |
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Application publication date: 20180918 |
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