CN107045370B - It is a kind of with high-order temperature compensated band gap reference voltage source circuit - Google Patents
It is a kind of with high-order temperature compensated band gap reference voltage source circuit Download PDFInfo
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- CN107045370B CN107045370B CN201710467380.3A CN201710467380A CN107045370B CN 107045370 B CN107045370 B CN 107045370B CN 201710467380 A CN201710467380 A CN 201710467380A CN 107045370 B CN107045370 B CN 107045370B
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
Abstract
The object of the present invention is to provide a kind of with high-order temperature compensated band gap reference voltage source circuit.It is according to the present invention have high-order temperature compensated band gap reference voltage source circuit include start-up circuit, biasing circuit, positive temperature current generation circuit, negative temperature current generating circuit, high order temperature compensation current generation circuit, electric current supercircuit and Bandgap Reference Voltage Generation Circuit；Wherein, the high order temperature compensation current generation circuit is for generating high order temperature compensation current, by offseting voltage caused by high order temperature compensation current generation circuit with nonlinear temperature item in single order bandgap voltage reference, the band gap reference voltage source circuit for having high-order temperature compensated is obtained.Compared with prior art, the invention has the following advantages that only increasing a small amount of component on the basis of single order bandgap voltage reference, high-order temperature compensation circuit is greatly simplified, on the basis of guaranteeing single order precision, effectively carry out high-order temperature compensated, and cost is relatively low.
Description
Technical field
The present invention relates to electronic technology fields more particularly to a kind of with high-order temperature compensated bandgap voltage reference electricity
Road.
Background technique
In the prior art, band gap reference is widely applied as basic circuit most widely used in Analogous Integrated Electronic Circuits
In high-precision analog integrated circuit, such as LED drive circuit, DC/DC converter, AC/DC converter, high-precision adc or DAC
In, with the continuous development of Analogous Integrated Electronic Circuits, the characteristics such as the precision of band gap reference, Low Drift Temperature, stability are proposed more next
Higher requirement, the characteristic of the band gap reference in some circuits even directly affect the performance and essence of system most important parameters
Degree.
Fever will lead to the raising of chip interior temperature when the power switch tube work integrated in integrated circuit, then band gap base
Quasi- temperature characterisitic will affect the relationship of system performance and temperature, and conventional first order band-gap reference circuit is usually by with positive temperature
The difference (△ VBE) of the base emitter voltage of coefficient and base emitter voltage (VBE) with negative temperature coefficient are by certain
Ratio is added, and the temperature coefficient for offsetting the two obtains the bandgap voltage reference of zero-temperature coefficient, knows that △ VBE is with temperature in theory
Linear rise, and in VBE include temperature linearity item and temperature higher order term, the high-order temperature compensated temperature that can be offset in VBE is high
Rank makes reference voltage have lower temperature drift.
Fig. 1 and Fig. 2 respectively illustrates an illustrative bandgap voltage reference single order temperature compensation principle and high-order temperature
The schematic diagram of compensation principle.
As shown in Figure 1, two dotted lines are respectively the different triode VBE difference in voltage △ VBE of two areas and one three
Pole pipe VBE voltage is added according to a certain percentage with the VBE with negative temperature coefficient using the △ VBE with positive temperature coefficient, is obtained
The solid line into single order band-gap reference temperature-compensation circuit VREF, i.e. Fig. 1, single order band-gap reference usually have more than ten ppm/ DEG C to several
Ten ppm/ DEG C of temperature drifts.
As shown in Fig. 2, also using one in addition to forming single order bandgap voltage reference using VBE and △ VBE in three dotted lines
A nonlinear terms VNL compensates the nonlinear terms in VBE, and nonlinear compensation voltage VNL can usually use the finger of temperature
Number, logarithm or quadratic term compensate, generally reach several ppm/ DEG C it is even lower.Since the nonlinear terms in VBE are T*
LnT form.
However, the existing high-order temperature compensated scheme of band-gap reference has the following problems: 1) compensation circuit component is excessive,
Compensation rate is increased with technique, temperature, the risk of mismatch fluctuation；2) circuit design itself can cause with mismatch compensation precision compared with
Difference；3) the excessive coarse high-order temperature compensated low precision of the theoretical practical band-gap reference of approximation bring of certain circuits.
Summary of the invention
The object of the present invention is to provide a kind of with high-order temperature compensated band gap reference voltage source circuit.
According to an aspect of the invention, there is provided it is a kind of with high-order temperature compensated band gap reference voltage source circuit,
It is characterised in that it includes start-up circuit, biasing circuit, positive temperature current generation circuit, negative temperature current generating circuit, high-order temperature
Spend compensating current generating circuit, electric current supercircuit and Bandgap Reference Voltage Generation Circuit；
Wherein, the high order temperature compensation current generation circuit is for generating high order temperature compensation current, by by high-order
Voltage caused by temperature-compensated current generation circuit is offseted with nonlinear temperature item in single order bandgap voltage reference, is had
There is high-order temperature compensated band gap reference voltage source circuit.
Compared with prior art, the invention has the following advantages that according to the present invention have high-order temperature compensated band gap
Reference voltage source circuit is by increasing high-order temperature compensation circuit on the basis of single order bandgap voltage reference, the height for generating it
Rank offset voltage can effectively offset the nonlinear terms temperature coefficient in single order bandgap voltage reference, to obtain with high-order temperature
The band gap reference voltage source circuit of compensation；Also, it is according to the present invention with high-order temperature compensated bandgap voltage reference electricity
Road only increases a small amount of component on the basis of single order bandgap voltage reference, greatly simplifies high-order temperature compensation circuit,
To avoid due to introduce more by technique, temperature, mismatch and the deviation introduced has on the basis of guaranteeing single order precision
The carry out of effect is high-order temperature compensated, and cost is relatively low.
Detailed description of the invention
By reading a detailed description of non-restrictive embodiments in the light of the attached drawings below, of the invention other
Feature, objects and advantages will become more apparent upon:
Fig. 1 shows the schematic diagram of an illustrative bandgap voltage reference single order temperature compensation principle；
Fig. 2 shows the schematic diagrames of a high-order temperature compensated principle of illustrative bandgap voltage reference；
Fig. 3 show according to a preferred embodiment of the present invention have high-order temperature compensated bandgap voltage reference
The schematic diagram of circuit.
The same or similar appended drawing reference represents the same or similar component in attached drawing.
Specific embodiment
Present invention is further described in detail with reference to the accompanying drawing.
Fig. 3 illustrate according to a preferred embodiment of the present invention have high-order temperature compensated bandgap voltage reference
The schematic diagram of source circuit.
Referring to Fig. 3, the band gap reference voltage source circuit includes start-up circuit 1, biasing circuit 2, the generation of positive temperature current
Circuit 3, negative temperature current generating circuit 4, high order temperature compensation current generation circuit 5 and electric current supercircuit and band-gap reference electricity
Press generation circuit 6.
Wherein, the start-up circuit 1 is used in power supply electrifying, and start-up circuit helps reference circuit to be detached from " zero " merger
Point makes it into normal operating conditions and turns off start-up circuit after benchmark is established.
Wherein, the start-up circuit 1 includes start-up resistor R1, NMOS tube: MN1, MN2 and MN5.Wherein, MN1 and MN2 group
At current mirror, MN5 is lower trombone slide.
Wherein, one end of start-up resistor R1 is connected with power supply, the grid of the drain and gate and MN2 of the other end and MN1
It is connected；The drain electrode of MN2 is connected with the grid of MP3 and MP5 in the grid of MP1 in biasing circuit 2, positive temperature current generation circuit 3；
The drain electrode of MN5 is connected with the grid of MN1 and MN2, and the grid of MN5 is connected with reference voltage VBG；The source electrode of MN1, MN2 and MN5 with
Ground is connected.
Wherein, the biasing circuit 2 is used to provide grid for the total grid grade in the PMOS cascode amplifier in benchmark circuit
Pole bias voltage.The biasing circuit 2 includes PMOS tube: MP1 and MP2, NMOS tube: MN3 and MN4.Wherein, MN3 and MN4 composition
Current mirror.
Wherein, the source electrode of MP1 and MP2 is connected with power supply, the grid of MP1 to drain with the grid of MN3, drain electrode and MN4
It is connected；The source electrode of MN3 and MN4 is connected to the ground, and the drain electrode of MN4 is connected with the grid of MP2 and drain electrode.
Wherein, the positive temperature current generation circuit 3 is for generating positive temperature coefficient electric current IPTAT.The positive temperature electricity
Flowing generation circuit 3 includes PMOS tube MP3, MP4, MP5 and MP6, amplifier OP1, PNP pipe: Q1 and Q2 and resistance R2.Wherein,
MP3 and MP4, MP5 and MP6 separately constitute cascode amplifier.
Wherein, the normal phase input end of OP1 is connected with the drain electrode of one end of resistance R2, MP4, the negative-phase input and Q2 of OP1
The drain electrode of emitter, MP6 be connected, drain electrode, the biasing of MN2 in the grid of the output end of OP1 and MP3 and MP5, start-up circuit 1
The grid of MP1 is connected in circuit 2；The grid of MP4 and MP6 is connected with the grid of MP2, drain electrode in start-up circuit 1；MP3's and MP5
Drain electrode is connected with the source electrode of MP4 and MP6 respectively；The other end of resistance R2 is connected with the emitter of Q1；The base stage sum aggregate of Q1 and Q2
Electrode is all connected to the ground.
Wherein, the negative temperature current generating circuit 4 is for generating negative temperature parameter current ICTAT.The negative temperature electric current
Generation circuit 4 includes amplifier OP2, and PMOS tube: MP7 and MP8 and resistance R3, the negative temperature current generating circuit 4 are multiplexed
Q2 in positive temperature current generation circuit 3.
Wherein, one end of the normal phase input end of OP2 and resistance R3, the drain electrode of MP8 and high order temperature compensation current generate
One end of resistance R4 in circuit 5 is connected, and the other end of R3 is connected to the ground；The negative-phase input of amplifier OP2 and positive temperature system
Number current generating circuits 3 in the emitter of Q2, the negative-phase input of OP1 and MP6 drain electrode be connected, the output end of OP2 with
Grid, MP9 and the MP13 of MP7 is connected；The source electrode of MP7 is connected with power supply, and drain electrode is connected with the source electrode of MP8；The grid of MP8
Pole is connected with the grid of MP2.
Wherein, the high order temperature compensation current generation circuit 5 is for generating high order temperature compensation current, by by high-order
Voltage caused by temperature-compensated current generation circuit 5 is offseted with nonlinear temperature item in single order bandgap voltage reference, is obtained
With high-order temperature compensated band gap reference voltage source circuit.
Specifically, the high order temperature compensation current generation circuit 5 in multiplexing single order band-gap reference circuit by flowing through just
Three poles of zero-temperature coefficient are flowed through in triode and high order temperature compensation current generation circuit 5 in temperature current generation circuit 3
The difference of the voltage of pipe, so that the difference is offseted with nonlinear temperature item in single order bandgap voltage reference, to be had
High-order temperature compensated band gap reference voltage source circuit.
The high order temperature compensation current generation circuit 5 includes resistance R4, PNP pipe Q3, PMOS tube: MP9, MP10, MP11
And MP12, the high order temperature compensation current generation circuit 5 have been multiplexed Q2 and negative temperature electricity in positive temperature current generation circuit 3
Flow the amplifier OP2 in generation circuit 4.Wherein, MP9, MP10, MP11 and MP12 form cascode amplifier.
Wherein, one end of resistance R4 is connected with the drain electrode of one end of R3, amplifier OP2 normal phase input end and MP8, electricity
The other end of resistance R4 is connected with the drain electrode of the emitter of Q3, MP10 and MP12；The base stage and collector of Q3 is connected to the ground；MP10 and
The grid of MP12 is connected with the grid of the grid of MP8, the grid of MP4, the grid of MP6 and MP2 and drain electrode, MP10 and MP12
Source electrode be connected respectively with the drain electrode of MP9 and MP11；The grid of the grid of MP9 and MP7, amplifier OP2 output end be connected to
Together；The grid of MP11 is connected with the output end of the grid of MP1, MP3, MP5, MN2 drain electrode and amplifier OP1, MP9 and MP11
Source electrode be connected with power supply.
Wherein, the electric current supercircuit and Bandgap Reference Voltage Generation Circuit 6 are used for negative temperature parameter current, positive temperature
Degree coefficient current and compensation electric current are superimposed according to a certain percentage, and are flowed through resistance R5 and generated bandgap voltage reference VBG。
It is characterized in that, the electric current supercircuit and Bandgap Reference Voltage Generation Circuit include PMOS tube: MP13,
MP14, MP15, MP16 and resistance R5.Wherein, MP13, MP14, MP15 and MP16 form cascode amplifier.
Wherein, the grid of MP13 is connected with the grid of MP7 and MP9；The grid of MP15 and the grid of MP1, MP3, MP5, MP11
Extremely it is connected；The source electrode of MP13 and MP15 is connected with power supply, MP13 drain electrode and MP15 drain respectively with the source electrode of MP14 and
The source electrode of MP16 is connected；The grid of MP14 and MP16 is connected with the grid of MP2, MP4, MP6, MP8, MP10, MP12, MP14 and
The drain electrode of MP16 is connected with the grid of one end of resistance R5, MN5；The other end of resistance R5 is connected to the ground.
It is elaborated below with reference to Fig. 3 according to the present invention with high-order temperature compensated band gap reference voltage source circuit
High-order temperature compensated principle and implementation method.
Referring to Fig. 3, when starting, supply voltage rises, and R1 branch current arrives MN2 by current mirror mirror, MN2 by MP3 and
The grid voltage of MP5 drags down, and so that positive temperature coefficient current generating circuit is detached from " zero " and annexs point, positive temperature current generation circuit is built
It is vertical, VBE2Voltage is 0.7V or so, and the positive input voltage of amplifier OP2 is zero at this time, amplifier OP2 output end by MP7 and
The grid voltage of MP9 and MP13 drags down, and negative temperature parameter current generation circuit is established.Meanwhile MP2 is cascode amplifier
Grid grade provides gate bias, reference voltage V altogetherBGAfter foundation, MN5 unlatching drags down the grid of MN1 and MN2, start completion.
When work, the output end of amplifier OP1 makes amplifier OP1 positive and negative mutually defeated by adjusting MP3 with the grid of MP5
Enter and hold voltage equal, therefore the electric current by R2 can be obtained, that is, there is positive temperature coefficient electric current IPTATAre as follows:
Wherein n is the number ratio of Q1 and Q2.
Similarly, amplifier OP2 makes the normal phase input end voltage of amplifier OP2 and negative defeated by adjusting the grid of MP7
Enter to hold voltage VBE2It is equal, therefore the electric current of resistance R3, i.e., with the electric current I of negative temperature coefficientCTATAre as follows:
If passing through electric current supercircuit for I without high order temperature compensation current generation circuit 5PTATElectric current and ICTATIt is added,
It again passes through resistance R5 and obtains single order temperature compensation bandgap reference voltage are as follows:
VBEThe relationship of voltage and temperature are as follows:
Wherein, VG0Indicate the bandgap voltage reference of silicon；T0Indicate room temperature；VBE0Indicate V when room temperatureBEVoltage；γ indicate with
The relevant temperature coefficient of technique, value are 3.6~4；JcIndicate BJT Collector Current Density.JcWith the relationship of temperature are as follows:
By JcIt brings into formula (4) and obtains:
It may thus be appreciated that in formula (3), VBE2Contain temperature higher order term in.
If the electric current that BJT flows through is zero-temperature coefficient electrical current, α=0, if BJT flows through IPTATElectric current then α=1.R4 resistance
A terminal voltage value and flow through IPTATThe V of the Q2 pipe of electric currentBEVoltage value is equal, and the other end voltage of R4 resistance, which is equal to, flows through zero temperature
Spend the V of the Q3 of coefficient currentBETherefore voltage flows through the electric current of resistance R4, i.e. compensation electric current are as follows:
Wherein, m is the number ratio of Q3 pipe and Q2 pipe；A2, A3 are respectively the area of Q2 pipe and Q3 pipe.It can from formula (7)
To find out IPTAT+ICTAT+2INLFor zero-temperature coefficient amount, and IPTATFor positive temperature coefficient amount, therefore compensate electric current INLWith T*
LnT form can offset V using thisBEMiddle nonlinear terms.
I is calculated by formula (6)NLAlso it can be concluded that INLWith the relationship of temperature, using flowing through IPTATThe V of the Q2 of electric currentBE2Electricity
Pressure subtracts the V for the Q3 for flowing through zero-temperature coefficientBE3Voltage has:
Since the Q2 electric current flowed through is IPTAT, and the electric current that Q3 flows through is IPTAT+ICTAT+2INL, so VBE2_0It is not equal to
VBE3_0。
Preferably, in order to make this two can make an appointment, IQ2 and IQ3 respectively indicate the electric current for flowing through Q2 and Q3, it is ensured that IQ2:
IQ3=A2:A3=1:m.By to the V in high-order compensation principleBE2_0With VBE3_0The condition of making an appointment has carried out further stringent control
System, i.e. IQ2:IQ3=A3:A2=1:m are lacked of proper care or theoretical point so that compensation this small electric current of electric current is as few as possible
The very poor influence of compensation current precision caused by not rigorous approximation in analysis.
When adjusting single order band-gap reference, IPTATWith ICTATIt is approximately equal at room temperature, therefore the value that m can be set is 2,
So that VBE2_0With VBE3_0It makes an appointment, finally obtains INLAre as follows:
Due to compensating electric current INLWith IPTATAnd ICTATCompared to very little, therefore individual current mirror mirror should not be used, because compared with
Small electric current makes current mirror work in sub-threshold region, and threshold voltage (VTH) mismatch makes electric current have exponent relation increasing with VGS
Long, the influence to electric current is bigger than the influence to work in strong inversion area, because the metal-oxide-semiconductor electric current of strong inversion area work is in VGS
Quadratic relationship increases, therefore using cascade the pipe MP7 and MP8 in original negative temperature parameter current generation circuit, by INL
With ICTATBeing stacked adduction, mirror image is gone out together, so that MP7 and MP8 works in strong inversion area.I is addedNLRevised Q3
Collector current are as follows:
IC3=IPTAT+ICTAT+2INL (10)
Electric current in MP7 is ICTAT+INL, and mirror image is to the MP13 in electric current supercircuit；Electric current is in MP5 simultaneously
IPTAT, and mirror image, to the MP15 in electric current supercircuit, MP13 electric current and MP15 electric current enable R4=R3 after overcurrent is superimposed
Afterwards, zero-temperature coefficient electrical current I is obtainedconstantAre as follows:
This current flowing resistance R5, and after enabling R5=R3, what is obtained has high-order temperature compensated bandgap voltage reference are as follows:
It is according to the present invention that there is high-order temperature compensated band gap reference voltage source circuit to pass through in single order band-gap reference electricity
Increase high-order temperature compensation circuit on the basis of potential source, the high-order compensation voltage for enabling it to generate effectively offsets single order band-gap reference electricity
Nonlinear terms temperature coefficient in pressure, to obtain the band gap reference voltage source circuit for having high-order temperature compensated；Also, according to
Of the invention there is high-order temperature compensated band gap reference voltage source circuit only to increase on the basis of single order bandgap voltage reference
A small amount of component, greatly simplifies high-order temperature compensation circuit, thus avoid due to introduce more by technique, temperature,
Mismatch and the deviation introduced effectively carry out high-order temperature compensated on the basis of guaranteeing single order precision, and cost is relatively low.
It should be noted that shown in Fig. 3 there is high-order temperature compensated band gap reference voltage source circuit only to illustrate this
The preferable examples of invention, not limit the scope of the present invention.What any conception range according to the present invention carried out, including to PNP
Pipe exchange is managed at NPN, and PMOS tube is exchanged into NMOS tube, to the change of the local structure of circuit, right in the case where the present invention provides design
The change of circuit implementing method and the replacement of other unsubstantialities, modification or modification etc., belong to the scope of the present invention it
It is interior.
It is obvious to a person skilled in the art that invention is not limited to the details of the above exemplary embodiments, Er Qie
In the case where without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter
From the point of view of which point, the present embodiments are to be considered as illustrative and not restrictive, and the scope of the present invention is by appended power
Benefit requires rather than above description limits, it is intended that all by what is fallen within the meaning and scope of the equivalent elements of the claims
Variation is included in the present invention.Any reference signs in the claims should not be construed as limiting the involved claims.This
Outside, it is clear that one word of " comprising " does not exclude other units or steps, and odd number is not excluded for plural number.That states in system claims is multiple
Unit or device can also be implemented through software or hardware by a unit or device.The first, the second equal words are used to table
Show title, and does not indicate any particular order.
Claims (5)
1. a kind of with high-order temperature compensated band gap reference voltage source circuit, which is characterized in that including start-up circuit, biased electrical
Road, positive temperature current generation circuit, negative temperature current generating circuit, high order temperature compensation current generation circuit, electric current superposition electricity
Road and Bandgap Reference Voltage Generation Circuit；
Wherein, the high order temperature compensation current generation circuit is for generating high order temperature compensation current, by by high-order temperature
Voltage caused by compensating current generating circuit is offseted with nonlinear temperature item in single order bandgap voltage reference, obtains having height
The band gap reference voltage source circuit of rank temperature-compensating；
The positive temperature current generation circuit includes PMOS tube: MP3, MP4, MP5 and MP6, amplifier OP1, PNP pipe: Q1 and Q2,
And resistance R2；
Wherein, the normal phase input end of OP1 is connected with the drain electrode of one end of resistance R2, MP4, the negative-phase input of OP1 and the hair of Q2
The drain electrode of emitter-base bandgap grading, MP6 is connected, the drain electrode of MN2 in the grid of the output end of OP1 and MP3 and MP5, start-up circuit, in biasing circuit
The grid of MP1 is connected；The grid of MP4 and MP6 is connected with the grid of MP2, drain electrode in biasing circuit；The drain electrode of MP3 and MP5 is distinguished
It is connected with the source electrode of MP4 and MP6；The other end of resistance R2 is connected with the emitter of Q1；The base stage and collector of Q1 and Q2 all with
Ground is connected；
The negative temperature current generating circuit includes amplifier OP2, PMOS tube: MP7 and MP8 and resistance R3, the negative temperature
Current generating circuit has been multiplexed the Q2 in positive temperature current generation circuit；
Wherein, one end of the normal phase input end of OP2 and resistance R3, the drain electrode of MP8 and high order temperature compensation current generation circuit
In resistance R4 one end be connected, the other end of R3 is connected to the ground；The emitter of the negative-phase input of amplifier OP2 and Q2, just
The drain electrode of MP6 is connected in the negative-phase input of OP1 and positive temperature current generation circuit in temperature current generation circuit, OP2's
MP9 and electric current supercircuit and bandgap voltage reference generate electricity in the grid of output end and MP7, high-order temperature compensation circuit
MP13 is connected in road；The source electrode of MP7 is connected with power supply, and drain electrode is connected with the source electrode of MP8；In the grid and biasing circuit of MP8
The grid of MP2 is connected；
The high order temperature compensation current generation circuit include resistance R4, PNP pipe Q3, PMOS tube: MP9, MP10, MP11 and
MP12, the Q2 and negative temperature electric current that the high order temperature compensation current generation circuit has been multiplexed in positive temperature current generation circuit are produced
Amplifier OP2 in raw circuit；
Wherein, one end of R3 in one end of resistance R4 and negative temperature current generating circuit, amplifier OP2 normal phase input end and
The drain electrode of MP8 is connected in negative temperature current generating circuit, the drain electrode of the emitter, MP10 and MP12 of the other end and Q3 of resistance R4
It is connected；The base stage and collector of Q3 is connected to the ground；The grid of MP8 in the grid and negative temperature current generating circuit of MP10 and MP12
The grid of MP4 in pole, positive temperature current generation circuit, in positive temperature current generation circuit in the grid and biasing circuit of MP6
The grid of MP2 is connected with drain electrode, and MP10 is connected with the drain electrode of MP9 and MP11 respectively with the source electrode of MP12；The grid and subzero temperature of MP9
The grid of MP7, the output end of amplifier OP2 link together in degree current generating circuit；In the grid and biasing circuit of MP11
The grid of MP3 and MP5 in MP1, positive temperature current generation circuit, MN2 drain electrode and positive temperature current generate electricity in start-up circuit
The output end of amplifier OP1 is connected in road, and the source electrode of MP9 and MP11 are connected with power supply.
2. band gap reference voltage source circuit according to claim 1, which is characterized in that the start-up circuit includes starting electricity
Hinder R1, NMOS tube: MN1, MN2 and MN5；
Wherein, one end of start-up resistor R1 is connected with power supply, the grid phase of the drain and gate and MN2 of the other end and MN1
Even；The drain electrode of MN2 is connected with the grid of MP3 and MP5 in the grid of MP1 in biasing circuit, positive temperature current generation circuit；MN5
Drain electrode be connected with the grid of MN1 and MN2, the grid of MN5 is connected with reference voltage VBG；The source electrode and ground of MN1, MN2 and MN5
It is connected.
3. band gap reference voltage source circuit according to claim 1, which is characterized in that the biasing circuit includes PMOS
Pipe: MP1 and MP2, NMOS tube: MN3 and MN4；
Wherein, the source electrode of MP1 and MP2 is connected with power supply, and the drain electrode of MP1 is connected with the grid of the grid of MN3, drain electrode and MN4；
The grid of MP1 is connected with the drain electrode of MN2 in start-up circuit；The source electrode of MN3 and MN4 is connected to the ground, the drain electrode of MN4 and the grid of MP2
Pole is connected with drain electrode.
4. band gap reference voltage source circuit according to claim 1, which is characterized in that the number ratio of Q3 and Q2 is indicated with m,
A2 and A3 respectively indicates the area of Q2 and Q3, and IQ2 and IQ3 respectively indicate the electric current for flowing through Q2 and Q3, then IQ2:IQ3=A2:A3
=1:m.
5. band gap reference voltage source circuit according to claim 1, which is characterized in that the electric current supercircuit and band gap
Reference voltage generating circuit includes PMOS tube: MP13, MP14, MP15, MP16 and resistance R5；
Wherein, the grid of MP13 and MP9 in MP7 in negative temperature current generating circuit and high order temperature compensation current generation circuit
Grid is connected；It is MP1 in the grid and biasing circuit of MP15, MP3 and MP5 in positive temperature current generation circuit, high-order temperature compensated
The grid of MP11 is connected in current generating circuit；The source electrode of MP13 and MP15 is connected with power supply, the drain electrode of MP13 and the leakage of MP15
Pole is connected with the source electrode of the source electrode of MP14 and MP16 respectively；MP2, positive temperature current in the grid and biasing circuit of MP14 and MP16
MP4 and MP6 in generation circuit, MP8 in negative temperature current generating circuit, in high order temperature compensation current generation circuit MP10 and
The grid of MP12 is connected, and the drain electrode of MP14 and MP16 are connected with the grid of MN5 in one end of resistance R5, start-up circuit；Resistance R5
The other end be connected to the ground.
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|---|---|---|---|---|
| US10222817B1 (en) * | 2017-09-29 | 2019-03-05 | Cavium, Llc | Method and circuit for low voltage current-mode bandgap |
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