CN108549453B - Reference voltage generating circuit with compensation loop and electronic equipment - Google Patents
Reference voltage generating circuit with compensation loop and electronic equipment Download PDFInfo
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- CN108549453B CN108549453B CN201810305448.2A CN201810305448A CN108549453B CN 108549453 B CN108549453 B CN 108549453B CN 201810305448 A CN201810305448 A CN 201810305448A CN 108549453 B CN108549453 B CN 108549453B
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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Abstract
The invention relates to the technical field of analog circuits, in particular to a reference voltage generating circuit with a compensation loop. The invention provides a reference voltage generating circuit with a compensation loop. The reference voltage generating circuit effectively solves the problems of high temperature coefficient and low precision of a reference voltage source in the prior art, reduces the temperature coefficient of output voltage by adding a compensation loop and starting current on the basis of a traditional reference voltage circuit, and has high output precision and stability. The invention also provides electronic equipment which can obviously improve the sensing precision of the sensor of the micro-electro-mechanical system.
Description
Technical Field
The invention relates to the technical field of analog circuits, in particular to a reference voltage generating circuit with a compensation loop and electronic equipment.
Background
The reference voltage generating circuit is a basic module unit in analog circuit design, mixed signal circuit design and digital design, has the function of providing a reference voltage which does not change along with temperature and power supply voltage for a system, and is high in precision, low in power consumption, high in power supply rejection ratio and low in temperature coefficient. The conventional bandgap reference voltage can be obtained by linearly superposing two voltages with positive and negative temperature coefficients. The difference value of the base electrode-emitter electrode voltages of the two bipolar triodes is in direct proportion to absolute temperature, the base electrode-emitter electrode voltages of the bipolar triodes have negative temperature coefficient properties, and the reference voltage irrelevant to temperature change is obtained by matching the two voltages with different properties in a certain proportion. However, when the temperature range of the conventional reference voltage generating circuit is greatly changed, the generated voltage is generally not ideal, and especially in some circuits with high requirements on voltage precision, the existing voltage source is far from meeting the requirements. Based on the above, the invention provides a reference voltage generation circuit with a compensation loop and an electronic device, wherein the reference voltage generation circuit has a lower temperature coefficient.
Disclosure of Invention
The invention aims to solve the problem that the temperature coefficient of voltage generated by the conventional reference voltage generating circuit is large, and provides a reference voltage generating circuit with a lower temperature coefficient and an electronic device.
The invention provides a reference voltage generating circuit with a compensation loop, which comprises a starting circuit, a reference voltage source circuit and a compensation loop, wherein the starting circuit is used for starting the reference voltage source circuit; the starting circuit comprises MOS tubes M9, M10, M11, M12 and M13, the source electrode of the MOS tube M11 is connected with an input voltage VDD, the drain electrode is connected with the grid electrode and connected with the source electrode of the M12, the drain electrode of the M12 is connected with the grid electrode and connected with the grid electrodes of the M9 and the M10 and the drain electrode of the M13, and the source electrodes of the M9, the M10 and the M13 are all grounded; the reference voltage source circuit includes: MOS tubes M4, M5, M6, M7 and M8, amplifiers A1 and A2, resistors R1, R2 and R3, triodes Q1 and Q2; the sources of the MOS tubes M4, M5, M6, M7 and M8 are all connected with the input voltage VDD, and the gates of the M4 and M5 are connected with the output end of the operational amplifier A2, the gates of the MOS tubes M1 and M6 and the drain of the M10; the drain electrode of the MOS tube M4 is connected with the reverse input ends of the operational amplifiers A1 and A2 and the emitter electrode of the triode Q1, the drain electrode of the MOS tube M5 is connected with the forward input end of the operational amplifier A2 and one end of the resistor R2, the other end of the resistor R2 is connected with the emitter electrode of the triode Q2, the base electrodes of the triodes Q1 and Q2 are connected, and the collector electrodes of the triodes are grounded; the drain of the M6 is a reference voltage output end VREF, and the drain of the M6 is connected with the drain of the M8 and the gate of the M13 and is grounded through a resistor R3; the gates of M7 and M8 are connected with the output end of the operational amplifier A1 and the drain of M9, the drain of M7 is connected with the positive input end of the operational amplifier A1, the drain of M3 and one end of a resistor R1, and the other end of the resistor R1 is grounded; the compensation loop comprises MOS tubes M1, M2 and M3, wherein the source of M1 is connected with an input voltage VDD, the drain of M1 is connected with the gate of M3 and the gate and the drain of M2, and the sources of M2 and M3 are grounded. The MOS tubes M1, M4, M5, M6, M7, M8, M11 and M12 are PMOS tubes, and the MOS tubes M2, M3, M9, M10 and M13 are NMOS tubes.
The invention also provides electronic equipment comprising the reference voltage generating circuit, wherein the electronic equipment further comprises a micro-electro-mechanical system sensor and a micro-mechanical structure, and the reference voltage generating circuit is connected with the input end of the micro-electro-mechanical system sensor and provides input voltage for the micro-electro-mechanical system sensor.
The reference voltage generating circuit with the compensation loop effectively solves the problems of high temperature coefficient and low precision of a reference voltage source in the prior art, reduces the temperature coefficient of output voltage by increasing the compensation loop and starting current on the basis of the traditional reference voltage circuit, and has high output precision and stability.
Drawings
Fig. 1 is a schematic diagram of a reference voltage generating circuit with a compensation loop according to the present invention.
Fig. 2 is a temperature characteristic curve of the output voltage of the reference voltage generating circuit with the compensation loop according to the present invention.
Detailed Description
The invention provides a reference voltage generating circuit with a compensation loop and an electronic device, and in order to make the purposes, technical schemes and advantages of the invention clearer and clearer, the invention is further described in detail by referring to the attached drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
As shown in fig. 1, a reference voltage generating circuit with a compensation loop comprises a starting circuit, a reference voltage source circuit and a compensation loop; the starting circuit comprises MOS tubes M9, M10, M11, M12 and M13, the source electrode of the MOS tube M11 is connected with an input voltage VDD, the drain electrode is connected with the grid electrode and connected with the source electrode of the M12, the drain electrode of the M12 is connected with the grid electrode and connected with the grid electrodes of the M9 and the M10 and the drain electrode of the M13, and the source electrodes of the M9, the M10 and the M13 are all grounded; the reference voltage source circuit includes: MOS tubes M4, M5, M6, M7 and M8, amplifiers A1 and A2, resistors R1, R2 and R3, triodes Q1 and Q2; the sources of the MOS tubes M4, M5, M6, M7 and M8 are all connected with the input voltage VDD, and the gates of the M4 and M5 are connected with the output end of the operational amplifier A2, the gates of the MOS tubes M1 and M6 and the drain of the M10; the drain electrode of the MOS tube M4 is connected with the reverse input ends of the operational amplifiers A1 and A2 and the emitter electrode of the triode Q1, the drain electrode of the MOS tube M5 is connected with the forward input end of the operational amplifier A2 and one end of the resistor R2, the other end of the resistor R2 is connected with the emitter electrode of the triode Q2, the base electrodes of the triodes Q1 and Q2 are connected, and the collector electrodes of the triodes are grounded; the drain of the M6 is a reference voltage output end VREF, and the drain of the M6 is connected with the drain of the M8 and the gate of the M13 and is grounded through a resistor R3; the gates of M7 and M8 are connected with the output end of the operational amplifier A1 and the drain of M9, the drain of M7 is connected with the positive input end of the operational amplifier A1, the drain of M3 and one end of a resistor R1, and the other end of the resistor R1 is grounded; the compensation loop comprises MOS tubes M1, M2 and M3, wherein the source of M1 is connected with an input voltage VDD, the drain of M1 is connected with the gate of M3 and the gate and the drain of M2, and the sources of M2 and M3 are grounded. The MOS tubes M1, M4, M5, M6, M7, M8, M11 and M12 are PMOS tubes, and the MOS tubes M2, M3, M9, M10 and M13 are NMOS tubes.
In the circuit, when the circuit is started, the MOS tubes M11 and M12 in the starting circuit are firstly conducted, the gate terminal voltages of the MOS tubes M9 and M10 are gradually increased, so that the MOS tubes M9 and M10 are conducted, the gate terminal voltages of the MOS tubes M4, M5, M6, M7 and M8 in the reference voltage source circuit are all reduced, the reference voltage source circuit is started, when the output voltage VREF is stable, the MOS tube M13 in the starting circuit is driven to be conducted, so that the gate terminal voltages of the MOS tubes M9 and M10 are reduced, the starting circuit is closed, and the whole starting process is completed. After the start-up is completed, the current flowing through the resistor R1 is a negative temperature coefficient current, and the current flowing through the resistor R2 is a positive temperature coefficient current, and at this time, the output voltage with a low temperature coefficient can be obtained by optimizing the width-to-length ratio parameters of the resistors R1 and R2 and the MOS transistor M3. Simulation results show that the improved reference voltage generation circuit has a lower temperature coefficient, and fig. 2 is a graph of simulation results of temperature characteristic curves, and the results show that when the input terminal voltage VDD is equal to 1.8V, the output reference voltage is 600mV, and the temperature coefficient is only 3.4 ppm/degree celsius.
The invention also provides electronic equipment comprising the reference voltage generating circuit, wherein the electronic equipment further comprises a micro-electromechanical system sensor and a micro-mechanical structure, the reference voltage generating circuit is connected with the input end of the micro-electromechanical system sensor and provides input voltage for the micro-electromechanical system sensor, and the electronic equipment can obviously improve the sensing precision of the micro-electromechanical system sensor.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (2)
1. A reference voltage generating circuit with a compensation loop is characterized by comprising a starting circuit, a reference voltage source circuit and a compensation loop; the starting circuit comprises MOS tubes M9, M10, M11, M12 and M13, the source electrode of the MOS tube M11 is connected with an input voltage VDD, the drain electrode is connected with the grid electrode and connected with the source electrode of the M12, the drain electrode of the M12 is connected with the grid electrode and connected with the grid electrodes of the M9 and the M10 and the drain electrode of the M13, and the source electrodes of the M9, the M10 and the M13 are all grounded; the reference voltage source circuit includes: MOS tubes M4, M5, M6, M7 and M8, amplifiers A1 and A2, resistors R1, R2 and R3, triodes Q1 and Q2; the sources of the MOS tubes M4, M5, M6, M7 and M8 are all connected with the input voltage VDD, and the gates of the M4 and M5 are connected with the output end of the operational amplifier A2, the gates of the MOS tubes M1 and M6 and the drain of the M10; the drain electrode of the MOS tube M4 is connected with the reverse input ends of the operational amplifiers A1 and A2 and the emitter electrode of the triode Q1, the drain electrode of the MOS tube M5 is connected with the forward input end of the operational amplifier A2 and one end of the resistor R2, the other end of the resistor R2 is connected with the emitter electrode of the triode Q2, the base electrodes of the triodes Q1 and Q2 are connected, and the collector electrodes of the triodes are grounded; the drain of the M6 is a reference voltage output end VREF, and the drain of the M6 is connected with the drain of the M8 and the gate of the M13 and is grounded through a resistor R3; the gates of M7 and M8 are connected with the output end of the operational amplifier A1 and the drain of M9, the drain of M7 is connected with the positive input end of the operational amplifier A1, the drain of M3 and one end of a resistor R1, and the other end of the resistor R1 is grounded; the compensation loop comprises MOS tubes M1, M2 and M3, wherein the source of M1 is connected with an input voltage VDD, the drain of M1 is connected with the gate of M3 and the gate and the drain of M2, and the sources of M2 and M3 are grounded; the MOS tubes M1, M4, M5, M6, M7, M8, M11 and M12 are PMOS tubes, and the MOS tubes M2, M3, M9, M10 and M13 are NMOS tubes.
2. An electronic device comprising the reference voltage generation circuit of claim 1, the electronic device further comprising a mems sensor and a micromechanical structure, the reference voltage generation circuit coupled to an input of the mems sensor and providing an input voltage to the mems sensor.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810305448.2A CN108549453B (en) | 2018-04-04 | 2018-04-04 | Reference voltage generating circuit with compensation loop and electronic equipment |
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| CN201810305448.2A CN108549453B (en) | 2018-04-04 | 2018-04-04 | Reference voltage generating circuit with compensation loop and electronic equipment |
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| CN108549453A CN108549453A (en) | 2018-09-18 |
| CN108549453B true CN108549453B (en) | 2019-12-10 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102591398A (en) * | 2012-03-09 | 2012-07-18 | 钜泉光电科技(上海)股份有限公司 | Multi-output bandgap reference circuit with function of nonlinear temperature compensation |
| CN103744464A (en) * | 2013-12-20 | 2014-04-23 | 中国科学院微电子研究所 | Band-gap reference circuit with current compensation |
| CN105974991A (en) * | 2016-07-05 | 2016-09-28 | 湖北大学 | Low-temperature-coefficient band-gap reference voltage source with high-order temperature compensation |
| CN107045370A (en) * | 2017-06-20 | 2017-08-15 | 上海灿瑞科技股份有限公司 | It is a kind of that there is high-order temperature compensated band gap reference voltage source circuit |
-
2018
- 2018-04-04 CN CN201810305448.2A patent/CN108549453B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102591398A (en) * | 2012-03-09 | 2012-07-18 | 钜泉光电科技(上海)股份有限公司 | Multi-output bandgap reference circuit with function of nonlinear temperature compensation |
| CN103744464A (en) * | 2013-12-20 | 2014-04-23 | 中国科学院微电子研究所 | Band-gap reference circuit with current compensation |
| CN105974991A (en) * | 2016-07-05 | 2016-09-28 | 湖北大学 | Low-temperature-coefficient band-gap reference voltage source with high-order temperature compensation |
| CN107045370A (en) * | 2017-06-20 | 2017-08-15 | 上海灿瑞科技股份有限公司 | It is a kind of that there is high-order temperature compensated band gap reference voltage source circuit |
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| CN108549453A (en) | 2018-09-18 |
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Effective date of registration: 20191118 Address after: 215000 No.138, East Street, Huangqiao street, Xiangcheng District, Suzhou City, Jiangsu Province Applicant after: Suzhou Xiangcheng District Huangqiao Industrial Park Economic Development Co., Ltd Address before: No. 12, No. 12, Lake Yun street, Chongqing, Chongqing Applicant before: Chongqing Ao Technology Co. Ltd. |
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