CN114371759A - Band-gap reference voltage source, integrated chip and reference voltage generation method - Google Patents
Band-gap reference voltage source, integrated chip and reference voltage generation method Download PDFInfo
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Abstract
The embodiment of the invention provides a band-gap reference voltage source, an integrated chip and a reference voltage generation method, wherein the band-gap reference voltage source comprises the following steps: the circuit comprises a core circuit, a temperature compensation circuit, a current mode addition circuit and a voltage division circuit; a temperature compensation circuit for generating a temperature compensation current based on a positive temperature coefficient current; and the voltage division circuit is used for converting the constant current into reference voltage. The temperature compensation circuit generates temperature compensation current based on positive temperature coefficient current, the temperature compensation current has exponential growth characteristic along with the change of temperature, and along with the increase of temperature, the temperature compensation current compensates the negative temperature coefficient current and the positive temperature coefficient current and then further compensates to form secondary temperature compensation to reduce temperature drift, so that band gap reference voltage with low temperature drift can be obtained, and the performance of the band gap reference voltage is improved.
Description
Technical Field
The invention relates to the technical field of integrated circuits, in particular to a band-gap reference voltage source, an integrated chip and a reference voltage generation method.
Background
With the development of chip technology, the integration level of a chip is higher and higher, the voltage of a reference voltage source in the chip is lower and lower, and the traditional bandgap reference is difficult to adapt to the application under the low-voltage condition.
The reference source is an important module in an integrated circuit and aims to establish a voltage which is independent of temperature, the traditional bandgap reference is actually obtained by adding a voltage with a negative temperature coefficient and a voltage with a positive temperature coefficient, generally speaking, the temperature drift after temperature compensation is 10 ppm/DEG C, the temperature drift is large, and many high-precision analog circuits require the reference source to have a very low temperature coefficient.
Therefore, how to realize a bandgap reference with low temperature drift is an urgent problem to be solved by those skilled in the art.
Disclosure of Invention
The embodiment of the invention provides a band-gap reference voltage source, an integrated chip and a reference voltage generation method, which are used for solving the technical problem of large temperature drift of the reference voltage source in the prior art.
In a first aspect, an embodiment of the present invention provides a bandgap reference voltage source, including: the circuit comprises a core circuit, a temperature compensation circuit, a current mode addition circuit and a voltage division circuit;
the core circuit is used for generating negative temperature coefficient current and positive temperature coefficient current based on the power supply voltage;
the temperature compensation circuit is used for generating a temperature compensation current based on the positive temperature coefficient current;
the current mode adding circuit is used for summing the negative temperature coefficient current, the positive temperature coefficient current and the temperature compensation current to obtain a constant current;
and the voltage division circuit is used for converting the constant current into reference voltage.
In one possible implementation, the temperature compensation circuit includes a first resistor, a second resistor, and a first transistor;
the first end of the first resistor receives the positive temperature coefficient current, and the second end of the first resistor is connected with the first end of the second resistor and the control end of the first transistor;
the second end of the second resistor is connected with the first end of the first transistor and is grounded;
the second end of the first transistor is used for generating the temperature compensation current;
wherein the first transistor operates in a sub-threshold region.
In one possible implementation, the first resistor is an adjustable resistor and/or the second resistor is an adjustable resistor.
In one possible implementation manner, the first transistor is an NMOS transistor.
In one possible implementation, the core circuit includes a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a first operational amplifier, a second operational amplifier, a third resistor, and a fourth resistor;
the control end of the second transistor is connected with the output end of the first operational amplifier, the first end of the second transistor is connected with the first end of the third transistor, the first end of the fourth transistor and the voltage end, the second end of the second transistor is connected with the first end of the third resistor and the negative input end of the first operational amplifier, and the second transistor is used for generating the negative temperature coefficient current;
a second end of the third resistor is connected with a first end of the fifth transistor and a first end of the sixth transistor, and is grounded;
a second end of the third transistor is connected to a second end of the fifth transistor, a control end of the fifth transistor, a positive input end of the first operational amplifier and a negative input end of the second operational amplifier, and a control end of the third transistor is connected to a control end of the fourth transistor and an output end of the second operational amplifier;
a second end of the fourth transistor is connected to the positive input end of the second operational amplifier and the first end of the fourth resistor, and is configured to generate the positive temperature coefficient current;
a second terminal of the fourth resistor is connected to a second terminal of the sixth transistor and a control terminal of the sixth transistor.
In one possible implementation, the voltage dividing circuit includes a fifth resistor;
and the first end of the fifth resistor is connected with the output end of the current mode addition circuit and used for generating the constant current, and the second end of the fifth resistor is grounded.
In one possible implementation, the fifth transistor and the sixth transistor are bipolar transistors.
In one possible implementation, the fifth resistor is an adjustable resistor.
In a second aspect, an embodiment of the present invention further provides an integrated chip, where the integrated chip includes the bandgap reference voltage source according to any one of the first aspects.
In a third aspect, an embodiment of the present invention further provides a reference voltage generating method, applied to the bandgap reference voltage source according to any one of the first aspects, including:
generating a negative temperature coefficient current and a positive temperature coefficient current based on the supply voltage;
generating a temperature compensation current based on the positive temperature coefficient current;
summing the negative temperature coefficient current, the positive temperature coefficient current and the temperature compensation current to obtain a constant current;
converting the constant current to a reference voltage.
The band-gap reference voltage source, the integrated chip and the reference voltage generation method provided by the embodiment of the invention comprise the following steps: the circuit comprises a core circuit, a temperature compensation circuit, a current mode addition circuit and a voltage division circuit; a temperature compensation circuit for generating a temperature compensation current based on a positive temperature coefficient current; and the voltage division circuit is used for converting the constant current into reference voltage. The temperature compensation circuit generates temperature compensation current based on positive temperature coefficient current, the temperature compensation current has exponential growth characteristic along with the change of temperature, and along with the increase of temperature, the temperature compensation current compensates the negative temperature coefficient current and the positive temperature coefficient current and then further compensates to form secondary temperature compensation to reduce temperature drift, so that band gap reference voltage with low temperature drift can be obtained, and the performance of the band gap reference voltage is improved.
Drawings
In order to more clearly illustrate the technical solutions of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a schematic circuit diagram of a bandgap reference voltage source according to an embodiment of the present invention;
fig. 2 is a schematic circuit diagram of a core circuit according to an embodiment of the present invention;
fig. 3 is a schematic circuit diagram of a temperature compensation circuit according to an embodiment of the present invention;
fig. 4 is a schematic diagram of an Ictat temperature characteristic curve according to an embodiment of the present invention;
fig. 5 is a schematic diagram of an Iptat temperature characteristic curve according to an embodiment of the present invention;
FIG. 6 is a schematic view of an Icom temperature profile provided by an embodiment of the present invention;
FIG. 7 is a schematic diagram of an Iconst temperature profile according to an embodiment of the present invention;
FIG. 8 is a schematic diagram of a Vbg _ ref temperature profile according to an embodiment of the present invention;
fig. 9 is a flowchart illustrating a method for generating a reference voltage according to an embodiment of the invention.
Detailed Description
In order to make the purpose, technical solutions and advantages of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all embodiments. All other embodiments that can be derived from the embodiments given herein by a person of ordinary skill in the art are intended to be within the scope of the present disclosure.
With the integration level of chips becoming higher and the power supply voltage becoming lower and lower, the conventional bandgap reference is difficult to adapt to the application under the low-voltage condition. The current methods for realizing low-voltage band gaps include: a method for adjusting threshold voltage by substrate driving; the reference voltage is generated by adding currents with different polarity temperature coefficients through a resistor. However, the adjustment of the threshold voltage by the substrate drive under the Fin-Field-Effect Transistor (FinFET) process is not obvious, so the low-voltage bandgap is realized by adopting a method of adding currents with different temperature coefficients.
In addition, many high-precision analog circuits require a reference source with a very low temperature coefficient, while the temperature coefficient of a reference circuit using first-order temperature compensation generally reaches above 10 ppm/DEG C, and in order to further reduce the temperature coefficient, it is necessary to reduce the temperature coefficient by using higher-order temperature compensation. The invention adopts a secondary curvature compensation mode to realize temperature compensation and reduce temperature drift, and specifically utilizes a high-order temperature coefficient generated by the subthreshold characteristic of MOSFET drain current to carry out secondary compensation.
The reference source is an important module in an integrated circuit, and aims to generate a voltage independent of temperature. The traditional BandGap reference (BandGap) is actually obtained by adding a negative temperature coefficient voltage and a positive temperature coefficient voltage, and the bipolar transistor can provide the voltages of the two temperature coefficients at the same time, which is the core in the design of the BandGap reference.
The base-emitter voltage (Vbe) of a Bipolar Junction Transistor (BJT) is a voltage with a negative temperature coefficient, and the difference (Δ Vbe) between two different transconductance transistors Vbe is a voltage with a positive temperature coefficient. The conventional bandgap reference is implemented by compensating the negative temperature coefficient voltage Vbe with a positive temperature coefficient voltage Δ Vbe, and the reference voltage is generally above 1.2V, which requires the power supply voltage of the circuit to be above 1.5V or even above 1.6V. As the operating voltage of the integrated circuit is lower and lower, the conventional reference source structure cannot adapt to practical application scenarios, and therefore, a reference source structure capable of operating under a low voltage condition to generate a low voltage reference is required.
In order to solve the above problem, an embodiment of the present invention provides a bandgap reference voltage source, as shown in fig. 1, including: a core circuit 11, a temperature compensation circuit 12, a current mode addition circuit 13 and a voltage division circuit 14;
a core circuit 11 for generating a negative temperature coefficient current Ictat and a positive temperature coefficient current Iptat based on a supply voltage VDD;
a temperature compensation circuit 12 for generating a temperature compensation current Icom based on the positive temperature coefficient current Iptat;
the current mode adding circuit 13 is used for summing the negative temperature coefficient current Ictat, the positive temperature coefficient current Iptat and the temperature compensation current Icom to obtain a constant current Iconst;
and a voltage dividing circuit 14 for converting the constant current Iconst into a reference voltage Vbg _ ref.
The band-gap reference voltage source provided by the embodiment of the invention comprises: the temperature compensation circuit 12 can generate a temperature compensation current Icom based on the positive temperature coefficient current Iptat, the temperature compensation current Icom has an exponential growth characteristic with the change of temperature, and as the temperature rises, the temperature compensation current Icom further compensates the negative temperature coefficient current Ictat and the positive temperature coefficient current Iptat after compensation, so as to form secondary temperature compensation and reduce temperature drift, thereby obtaining a bandgap reference voltage with low temperature drift and improving the performance of the bandgap reference voltage.
The CORE circuit 11(BG _ CORE) may generate two currents with different temperature coefficients, and Ictat is a negative temperature coefficient current, that is, has a negative temperature characteristic; iptat is a positive temperature coefficient current, i.e. has a positive temperature characteristic; the temperature compensation circuit 12(TC) may generate a temperature compensation current Icom, which is generated based on the positive temperature coefficient current Iptat, and has an absolute value much smaller than the negative temperature coefficient current Ictat and the positive temperature coefficient current Iptat, but has a positive high-order temperature coefficient, i.e., the temperature coefficient of Icom increases as the temperature increases.
Icat, Itat and Icom are summed by a current-mode adding circuit 13 to obtain a constant current Iconst with low temperature drift, and the constant current Iconst passes through a voltage dividing circuit 14 to obtain a reference voltage Vbg _ ref. The temperature characteristic of Vbg _ ref is consistent with that of Iconst, and a reference source of any voltage can be obtained by adjusting the resistance value of R5, which is a specific scheme for realizing low-voltage output and low-temperature drift reference source.
Specifically, as shown in fig. 2, it is a schematic diagram of a core circuit 11 in the embodiment of the present invention. As can be seen from fig. 2, the core circuit 11 may include a second transistor T2, a third transistor T3, a fourth transistor T4, a fifth transistor T5, a sixth transistor T6, a first operational amplifier OP1, a second operational amplifier OP2, a third resistor R3, and a fourth resistor R4;
a control terminal of the second transistor T2 is connected to an output terminal of the first operational amplifier OP1, a first terminal of the second transistor T2 is connected to a first terminal of the third transistor T3, a first terminal of the fourth transistor T4 and a voltage terminal VDD, a second terminal of the second transistor T2 is connected to a first terminal of the third resistor R3 and a negative input terminal of the first operational amplifier OP1, and is configured to generate a negative temperature coefficient current Ictat;
a second terminal of the third resistor R3 is connected to the first terminal of the fifth transistor T5 and the first terminal of the sixth transistor T6, and is grounded to VSS;
a second terminal of the third transistor T3 is connected to a second terminal of the fifth transistor T5, a control terminal of the fifth transistor T5, a positive input terminal of the first operational amplifier OP1 and a negative input terminal of the second operational amplifier OP2, and a control terminal of the third transistor T3 is connected to a control terminal of the fourth transistor T4 and an output terminal of the second operational amplifier OP 2;
a second terminal of the fourth transistor T4 is connected to the positive input terminal of the second operational amplifier OP2 and the first terminal of the fourth resistor R4, and is configured to generate a positive temperature coefficient current Iptat;
a second terminal of the fourth resistor R4 is connected to a second terminal of the sixth transistor T6 and a control terminal of the sixth transistor T6.
In a specific implementation, the second Transistor T2, the third Transistor T3, and the fourth Transistor T4 may be Metal-Oxide-Semiconductor Field-Effect transistors (MOSFETs), the fifth Transistor T5 and the sixth Transistor T6 may be Bipolar Junction Transistors (BJTs), and a ratio of emitter areas of the fifth Transistor T5 to the sixth Transistor T6 is 1: and N is added.
Since the input end of the operational amplifier has a "virtual short" characteristic, and the error at the input end is inversely proportional to the gain of the operational amplifier, and the error at the input end can be ignored on the premise of ensuring the gain of the operational amplifier, the voltages at the input ends of the first operational amplifier OPA1 and the second operational amplifier OPA2 are both the base emitter voltage Vbe of the fifth transistor T5, the voltage across the third resistor R3 is Vbe, and the voltage across the fourth resistor R4 is the difference Δ Vbe between the base emitter voltages of the fifth transistor T5 and the sixth transistor T6, so as to obtain the expressions of Ictat and Iptat as follows:
compared with the traditional band-gap reference source, the voltage addition operation is converted into the current addition operation, and the requirement on the voltage value of the power supply voltage VDD is reduced. The base emitter voltage Vbe of the transistor in the saturation region, that is, the forward-conducting PN junction voltage, is generally about 700mV for silicon materials, and according to the circuit structure shown in fig. 2, the minimum value allowed by the power supply voltage VDD is Vbe plus the threshold voltage of the MOS transistor (T2, T3, or T4), so that the operating voltage can be reduced to about 1.1V for the circuit structure, and compared with the operating voltage above the conventional bandgap reference 1.5V, the operating voltage can better adapt to the low-voltage operating condition.
As shown in fig. 3, for a circuit schematic diagram of a temperature compensation circuit according to an embodiment of the present invention, as can be seen from fig. 3, the temperature compensation circuit 12(TC) may include a first resistor R1, a second resistor R2, and a first transistor T1;
a first terminal of the first resistor R1 receives the positive temperature coefficient current Iptat, and a second terminal of the first resistor R1 is connected with a first terminal of the second resistor R2 and a control terminal of the first transistor T1;
a second terminal of the second resistor R2 is connected to the first terminal of the first transistor T1 and to ground VSS;
the second terminal of the first transistor T1 is used to generate the temperature compensation current Icom;
in which the first transistor T1 operates in the Sub-threshold region Sub _ threshold region.
Specifically, the first transistor T1 may be an NMOS transistor, the first resistor R1 may be an adjustable resistor, and/or the second resistor R2 may be an adjustable resistor.
The temperature compensation circuit 12 performs secondary temperature compensation by using the sub-threshold characteristic of the MOSFET, the gate voltage of the NMOS is generated by a positive temperature coefficient current Iptat through the second resistor R2, and according to the variation range of Iptat with temperature, the resistance of R1 and/or R2 is selected to ensure that the gate voltage is lower than the threshold voltage, so that the first transistor T1 operates in the sub-threshold region. Since the drain current subthreshold characteristic of the MOSFET has a high-order temperature characteristic in the forward direction, it is possible to perform secondary temperature compensation for the current.
The voltage divider circuit 14 in the embodiment of the present invention may include a fifth resistor R5, as shown in fig. 2, a first end of the fifth resistor R5 is connected to the output end of the current-mode adder circuit 13 and is configured to generate the constant current Iconst, a second end of the fifth resistor R5 is connected to the ground VSS, the fifth resistor R5 may be an adjustable resistor, and a resistance of the fifth resistor R5 is adjusted to obtain an arbitrary reference voltage Vbg _ ref for output.
The temperature characteristics of Ictat, Iptat and Icom in the embodiment of the present invention will be described in detail below.
The specific expressions of Ictat and Iptat can be obtained by substituting expressions of Vbe and Δ Vbe into expressions (1) and (2), as shown in expressions (3) and (4) below.
Wherein, VTIs a thermal voltage, ICIs the collector current, ISFor saturation current, lnN is crystallineLogarithm of the ratio of the tube active area areas.
Considering the effect of temperature on the reverse current Is, and neglecting the effect of temperature on the collector current Ic, the derivative results for Ictat and Iptat with respect to temperature are as follows;
wherein m is a temperature index of mobility, about-3/2; vTThermal voltage, about 26mV at room temperature; eg is the band gap energy of the silicon material; k is Boltzmann constant, and q is the amount of electric charge of electrons; t is the temperature.
From the above equation, the temperature coefficient of Ictat is still temperature dependent, and the temperature coefficient of Iptat is a constant, which indicates that Ictat has not only the first order temperature characteristic but also the high order temperature characteristic. As the temperature increases, Vbe decreases due to the negative temperature coefficient of Vbe, and the temperature coefficient of Ictat decreases, indicating that the higher order temperature coefficient of Ictat is still negative. Therefore, the temperature-dependent curves of Ictat and Iptat can be drawn as shown in fig. 4 and 5, and the current values of Ictat and Iptat can be adjusted according to the design requirements, and the specific adjustment manner can be that the resistance values of R3 and R4 are integrally increased or decreased while the proportion of R3 and R4 is maintained, and the current value is generally in the microampere level.
Adjusting the ratio of R3 to R4 to provide that Ictat and Iptat have temperature coefficients that are fully complementary at a particular temperature, and that Iptat has a temperature coefficient greater than Ictat when the temperature is below this value; when the temperature is higher than this value, the temperature coefficient of Iptat is smaller than that of Ictat, so the current curve of the first order temperature compensation approximates to a quadratic curve with a downward opening. The curve extreme point of the first order compensation is adjusted to the intermediate temperature, where the temperature drift is minimal, with a value depending on the size of the downward opening, which cannot be adjusted due to the temperature characteristics of the current itself, and generally, the temperature drift of the first order compensation is above 10 ppm/deg.C. To further reduce the temperature drift of the current, a second compensation is required so that the current curve has two extreme points, forming an S-shaped curve, as shown in fig. 7.
The temperature characteristic of the compensation current Icom is described below.
When the gate-source voltage of the MOSFET is higher than the threshold voltage and the gate-drain voltage is lower than the threshold voltage, the MOSFET operates in a saturation region, and the drain current shows a square characteristic, and when the gate-source voltage is lower than the threshold voltage, the MOSFET operates in a sub-threshold region, and the drain current shows an exponential characteristic. Referring to fig. 3, the first transistor T1 operates in the sub-threshold region, Icom is a sub-threshold drain current, and is expressed as follows.
Wherein W is the channel width of the MOS transistor, L is the channel length of the MOS transistor, munFor carrier mobility, CDK is the boltzmann constant and ξ is a process-dependent coefficient for depletion region capacitance.
Substituting the expression of Iptat into the above equation, we can:
from the above equation, the change curve of Icom with temperature can be obtained, as shown in FIG. 6. The subthreshold current is generally in the nano-ampere magnitude and is far smaller than the Ictat and the Ictat, the first-order compensation points of the two currents are slightly influenced, the temperature coefficient of Icom can rise along with the rise of the temperature, the rising trend of the temperature coefficient of Icom is larger than the descending trend of the temperature coefficient of the Ictat, and Iconst is represented as a positive temperature coefficient when the temperature is higher, so that the secondary temperature compensation can be formed to reduce the temperature drift. The temperature characteristics of Vbg _ ref and Iconst are consistent, and the temperature-dependent curves are shown in fig. 8.
Based on the same inventive concept, the embodiment of the present invention further provides an integrated chip, which includes the bandgap reference voltage source mentioned in any of the above embodiments.
Based on the same inventive concept, an embodiment of the present invention further provides a reference voltage generating method, which is applied to the bandgap reference voltage source mentioned in any of the above embodiments, as shown in fig. 9, and includes:
s901, generating a negative temperature coefficient current and a positive temperature coefficient current based on the power supply voltage;
s902, generating a temperature compensation current based on the positive temperature coefficient current;
s903, summing the negative temperature coefficient current, the positive temperature coefficient current and the temperature compensation current to obtain a constant current;
and S904, converting the constant current into reference voltage.
With the continuous development of deep submicron technology, the working voltage of an integrated circuit is lower and lower, the low-voltage band-gap reference realized by the invention can be well adapted to low-voltage conditions, and a reference source with any voltage value is output, so that the low-voltage band-gap reference has a very wide application prospect. At present, many high-precision analog circuits require high-precision and low-temperature drift reference sources. And the connection relation among the modules of the reference source is simple and clear, the circuit structure in the modules is very simple, the implementation is easy, and the reference source has good practical application value.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present application without departing from the spirit and scope of the application. Thus, if such modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application is intended to include such modifications and variations as well.
Claims (10)
1. A bandgap reference voltage source, comprising: the circuit comprises a core circuit, a temperature compensation circuit, a current mode addition circuit and a voltage division circuit;
the core circuit is used for generating negative temperature coefficient current and positive temperature coefficient current based on the power supply voltage;
the temperature compensation circuit is used for generating a temperature compensation current based on the positive temperature coefficient current;
the current mode adding circuit is used for summing the negative temperature coefficient current, the positive temperature coefficient current and the temperature compensation current to obtain a constant current;
and the voltage division circuit is used for converting the constant current into reference voltage.
2. The voltage source of claim 1, wherein the temperature compensation circuit comprises a first resistor, a second resistor, and a first transistor;
the first end of the first resistor receives the positive temperature coefficient current, and the second end of the first resistor is connected with the first end of the second resistor and the control end of the first transistor;
the second end of the second resistor is connected with the first end of the first transistor and is grounded;
the second end of the first transistor is used for generating the temperature compensation current;
wherein the first transistor operates in a sub-threshold region.
3. Voltage source according to claim 2, characterized in that the first resistance is an adjustable resistance and/or the second resistance is an adjustable resistance.
4. The voltage source of claim 2, wherein the first transistor is an NMOS transistor.
5. The voltage source of claim 1, wherein the core circuit comprises a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a first operational amplifier, a second operational amplifier, a third resistor, and a fourth resistor;
the control end of the second transistor is connected with the output end of the first operational amplifier, the first end of the second transistor is connected with the first end of the third transistor, the first end of the fourth transistor and the voltage end, the second end of the second transistor is connected with the first end of the third resistor and the negative input end of the first operational amplifier, and the second transistor is used for generating the negative temperature coefficient current;
a second end of the third resistor is connected with a first end of the fifth transistor and a first end of the sixth transistor, and is grounded;
a second end of the third transistor is connected to a second end of the fifth transistor, a control end of the fifth transistor, a positive input end of the first operational amplifier and a negative input end of the second operational amplifier, and a control end of the third transistor is connected to a control end of the fourth transistor and an output end of the second operational amplifier;
a second end of the fourth transistor is connected to the positive input end of the second operational amplifier and the first end of the fourth resistor, and is configured to generate the positive temperature coefficient current;
a second terminal of the fourth resistor is connected to a second terminal of the sixth transistor and a control terminal of the sixth transistor.
6. The voltage source of claim 1, wherein the voltage divider circuit comprises a fifth resistor;
and the first end of the fifth resistor is connected with the output end of the current mode addition circuit and used for generating the constant current, and the second end of the fifth resistor is grounded.
7. The voltage source of claim 5, wherein the fifth transistor and the sixth transistor are bipolar transistors.
8. The voltage source of claim 6, wherein the fifth resistor is an adjustable resistor.
9. An integrated chip comprising a bandgap reference voltage source as claimed in any one of claims 1 to 8.
10. A reference voltage generating method applied to the bandgap reference voltage source according to any one of claims 1 to 8, comprising:
generating a negative temperature coefficient current and a positive temperature coefficient current based on the supply voltage;
generating a temperature compensation current based on the positive temperature coefficient current;
summing the negative temperature coefficient current, the positive temperature coefficient current and the temperature compensation current to obtain a constant current;
converting the constant current to a reference voltage.
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