CN115309227A - Fully-saturated MOSFET band-gap reference source - Google Patents

Abstract

The invention discloses a fully saturated MOSFET band-gap reference source, which comprises: the circuit comprises a starting circuit, a current generating circuit, a temperature compensation generating circuit and a reference source output circuit; the current generating circuit is used for generating temperature coefficient current which has a first correlation with temperature change; the temperature compensation generating circuit is used for generating temperature coefficient voltage which has second correlation with temperature change; the reference source output circuit is used for generating reference voltage by using the temperature coefficient current and the temperature coefficient voltage and outputting the reference voltage to the starting circuit; the starting circuit is used for ensuring that the fully saturated MOSFET band-gap reference source is separated from a non-ideal working point and enters a normal working point in the starting process. The invention adopts the full MOS structure, the MOS tube is biased to work in the saturation region, the process requirement is greatly reduced, the MOS tube temperature characteristic of different semiconductor materials can be adapted, the universality is realized, meanwhile, the circuit structure complexity is low, and the MOS tube temperature control circuit can be widely applied to various circuits to generate reference voltage.

Description

A Fully Saturated MOSFET Bandgap Reference Source

technical field

The invention belongs to the technical field of integrated circuits, and in particular relates to a fully saturated MOSFET bandgap reference source.

Background technique

The reference voltage source is an indispensable basic building block in integrated circuits. It is widely used in power conversion circuits, high-voltage drive circuits, and analog and digital converters. Its role is to provide other modules in the circuit with a temperature, A reference voltage that is weakly correlated with factors such as power supply voltage and process.

However, limited by certain process conditions such as the SiC MOSFET process, it is impossible to use the classic bandgap reference structure like Si-based, and because the full MOS bandgap reference circuit structure mostly uses sub-threshold region MOS transistors to achieve temperature compensation, it is limited by modeling. However, it is impossible to achieve accurate simulation. In addition, for some new material devices such as SiC MOSFET, the change of mobility with temperature is different from that of traditional Si base. The mobility of P tube and N tube increases with the increase of temperature, so it cannot be directly superimposed. Positive and negative compensation.

Contents of the invention

In order to solve the above-mentioned problems in the prior art, the present invention provides a fully saturated MOSFET bandgap reference source. The technical problem to be solved in the present invention is realized through the following technical solutions:

The present invention provides a fully saturated MOSFET bandgap reference source, which is characterized in that it includes: a start-up circuit, a current generation circuit, a temperature compensation generation circuit and a reference source output circuit; wherein,

The current generation circuit is used to generate a temperature coefficient current with a first correlation with temperature change;

The temperature compensation generating circuit is used to generate a temperature coefficient voltage with a second correlation with temperature change;

The reference source output circuit is used to generate a reference voltage using the temperature coefficient current and the temperature coefficient voltage, and output the reference voltage to the startup circuit;

The start-up circuit is used to ensure that the fully saturated MOSFET bandgap reference source leaves the non-ideal operating point and enters the normal operating point during the start-up process.

In one embodiment of the present invention, it includes an input power supply terminal; the current generating circuit includes: a first resistor R ₁ , a first MOS transistor M ₁ , a second MOS transistor M ₂ , a third MOS transistor M ₃ , a fourth MOS tube M ₄ and high-gain operational amplifier; where,

_{The first} terminal of R1 and the source terminal of _M2 are connected to the input power supply terminal, the source terminal _of M3 and the source terminal of M4 are grounded, the second terminal _of R1 is connected to the source terminal _of M1, and the source terminal _of M1 The gate terminal, the drain terminal and the drain terminal of M3 are all connected to the non-inverting terminal of the high _- gain operational amplifier, the gate terminal, the drain terminal _{of M2} and the drain terminal of M4 are all connected to the inverting terminal of the high _- gain operational amplifier, and the gate terminal of M3 Both the terminal and the gate terminal of M4 are connected to the output terminal of the high _- gain operational amplifier.

In an embodiment of the present invention, the temperature compensation generating circuit includes a fifth MOS transistor M ₅ , a sixth MOS transistor M ₆ , a seventh MOS transistor M ₇ and an eighth MOS transistor M ₈ ; wherein,

_The source terminal of _M5 and the source terminal of M7 are connected to the input power terminal, the source terminal of _M6 , the gate terminal and drain terminal of _M8 are grounded, the gate terminal and drain terminal of _M5 and the drain terminal of _M6 are both It is connected with the gate terminal of _M7 , and the gate terminal of _M6 is connected with the output terminal of the high-gain operational amplifier.

In an embodiment of the present invention, an output terminal is also included; the reference source output circuit includes: a second resistor R ₂ , a ninth MOS transistor M ₉ and a tenth MOS transistor M ₁₀ ; wherein,

_The source terminal of _M8 and the drain terminal of _M7 are connected to the gate terminal of _M9 , the source terminal of _M9 is connected to the first terminal of R2, the _second terminal of R2 is connected to the drain terminal of _M10 to the output terminal, The drain terminal of M ₉ is connected to the input power supply terminal, the source terminal of M ₁₀ is grounded, and the gate terminal is connected to the output terminal of the high-gain operational amplifier.

In one embodiment of the present invention, the startup circuit includes an eleventh MOS transistor M ₁₁ , a twelfth MOS transistor M ₁₂ , a thirteenth MOS transistor M ₁₃ , a fourteenth MOS transistor M ₁₄ and a fifteenth MOS transistor Tube M ₁₅ ; where,

The source terminal of _M11 , the source terminal of _M13 and the source terminal of _M15 are all connected to the input power terminal, the gate terminal _{of M11} and the gate terminal of M12 are connected to the output terminal, the drain terminal of _M11 , Both the drain terminal of M ₁₂ and the gate terminal of M ₁₃ are connected to the gate terminal of M ₁₄ , the drain terminal of M ₁₃ and the drain terminal of M ₁₄ are both connected to the gate terminal of M ₁₅ , and the drain terminal of M ₁₅ is connected to a high-gain operational amplifier output terminal.

In one embodiment of the present invention, M ₁ -M ₁₅ are SiMOSFETs or SiCMOSFETs.

In one embodiment of the present invention, when M ₁ to M ₁₅ are SiC MOSFETs, the current generation circuit is used to generate a negative temperature coefficient current that is negatively correlated with temperature change, and the temperature compensation generation circuit is used to generate a current that is proportional to temperature Changes are positively related to the positive temperature coefficient of voltage.

In one embodiment of the present invention, when M ₁ to M ₁₅ are SiMOSFETs, the current generation circuit is used to generate a positive temperature coefficient current that is positively correlated with temperature changes, and the temperature compensation generation circuit is used to generate currents that are proportional to temperature changes Negative temperature coefficient voltage that is inversely related.

Compared with prior art, the beneficial effect of the present invention is:

The present invention provides a fully saturated MOSFET bandgap reference source, including: a start-up circuit, a current generation circuit, a temperature compensation generation circuit and a reference source output circuit; wherein, the current generation circuit can use the operational amplifier clamp to generate and M ₁ , M ₂ The temperature coefficient of the carrier mobility of the MOS tube is inversely or proportional to the current. For example, when the temperature coefficient of the carrier mobility of the MOS tube of M ₁ and M ₂ is positive, the current generation circuit can generate CTAT (Complementary To Absolute Temperature , which is inversely proportional to the absolute temperature) current is the negative temperature coefficient current, and then the temperature compensation generation circuit uses the common source to reverse the negative temperature coefficient current to generate a positive temperature coefficient voltage, so that the positive and negative temperature coefficient physical quantities are combined by the reference source output circuit offset. The fully saturated MOSFET bandgap reference source provided by the invention can adapt to the temperature characteristics of MOS tubes of different semiconductor materials, has universal applicability, has low circuit structure complexity, and can be used to generate reference voltages in various circuits.

In addition, the bandgap reference source provided by the present invention adopts a full MOS structure, and the MOS transistors are all biased to work in the saturation region, which greatly reduces the requirements for the process.

The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.

Description of drawings

Fig. 1 is a schematic structural diagram of a fully saturated MOSFET bandgap reference source provided by an embodiment of the present invention;

2 is a schematic circuit diagram of a fully saturated MOSFET bandgap reference source provided by an embodiment of the present invention;

Fig. 3 is the temperature characteristic curve of the output voltage of the fully saturated MOSFET bandgap reference source provided by the embodiment of the present invention;

Fig. 4 is a schematic diagram of the linear adjustment rate of a fully saturated MOSFET bandgap reference source provided by an embodiment of the present invention.

Detailed ways

The present invention will be described in further detail below in conjunction with specific examples, but the embodiments of the present invention are not limited thereto.

FIG. 1 is a schematic structural diagram of a fully saturated MOSFET bandgap reference source provided by an embodiment of the present invention. As shown in FIG. 1, an embodiment of the present invention provides a fully saturated MOSFET bandgap reference source, including: a start-up circuit, a current generation circuit, a temperature compensation generation circuit, and a reference source output circuit; wherein,

A current generating circuit, used to generate a temperature coefficient current with a first correlation with the temperature change;

A temperature compensation generating circuit, used to generate a temperature coefficient voltage with a second correlation with temperature change;

The reference source output circuit is used to generate a reference voltage by using the temperature coefficient current and the temperature coefficient voltage, and output the reference voltage to the start-up circuit;

The start-up circuit is used to ensure that the fully saturated MOSFET bandgap reference source leaves the non-ideal operating point and enters the normal operating point during the start-up process.

Fig. 2 is a schematic circuit diagram of a fully saturated MOSFET bandgap reference source provided by an embodiment of the present invention. Optionally, as shown in Figure 2, the fully saturated MOSFET bandgap reference source includes the input power supply terminal V _DD ; the current generating circuit includes: a first resistor R ₁ , a first MOS transistor M ₁ , a second MOS transistor M ₂ , a second MOS transistor M 2 Three MOS transistors M ₃ , a fourth MOS transistor M ₄ and a high-gain operational amplifier; wherein,

The first end of R ₁ and the source end of M ₂ are connected to the input power supply terminal V _DD , the source end of M ₃ and the source end of M ₄ are grounded, the second end of R ₁ is connected to the source end of M ₁ , and the source end of M ₁ The gate terminal, the drain terminal and the drain terminal of M3 are all connected to the non-inverting terminal of the high _- gain operational amplifier, the gate terminal, the drain terminal _{of M2} and the drain terminal of M4 are all connected to the inverting terminal of the high _- gain operational amplifier, and the gate terminal of M3 The terminal and the gate terminal of M ₄ are both connected to the output terminal V _ref of the high-gain operational amplifier.

It should be noted that, in the fully saturated MOSFET bandgap reference source provided by the present invention, the current generation circuit can use the operational amplifier clamp to generate a current that is inversely or directly proportional to the temperature coefficient of the MOS tube carrier mobility _of M1 and _M2 current. Exemplarily, when the temperature coefficient of carrier mobility of M ₁ and M ₂ is positive, the current generation circuit can generate CTAT current, that is, the negative temperature coefficient current, and then the temperature compensation generation circuit can use the common The source is reversed to generate a positive temperature coefficient voltage, so that the reference source output circuit will offset the combination of positive and negative temperature coefficient physical quantities; on the contrary, when the temperature coefficient of carrier mobility of M ₁ and M ₂ is negative, the current The generation circuit generates PTAT (Proportional To Absolute Temperature, proportional to the absolute temperature) current, that is, the positive temperature coefficient current, and the temperature compensation generation circuit reverses the positive temperature coefficient current by using the common source to generate a negative temperature coefficient voltage to achieve positive and negative The temperature coefficient of the physical quantity is combined for the purpose of offsetting.

Please continue to refer to FIG. 2 , the temperature compensation generation circuit in this embodiment includes a fifth MOS transistor M ₅ , a sixth MOS transistor M ₆ , a seventh MOS transistor M ₇ and an eighth MOS transistor M ₈ ; wherein,

The source terminal of M ₅ and the source terminal of M ₇ are connected to the input power supply terminal V _DD , the source terminal of M ₆ , the gate terminal and drain terminal of M ₈ are grounded, and the gate terminal and drain terminal of M ₅ and the drain terminal of M ₆ are both It is connected with the gate terminal of _M7 , and the gate terminal of _M6 is connected with the output terminal of the high-gain operational amplifier.

Optionally, the fully saturated MOSFET bandgap reference source also includes an output terminal; the reference source output circuit includes: a second resistor R ₂ , a ninth MOS transistor M ₉ and a tenth MOS transistor M ₁₀ ; wherein,

_The source terminal of _M8 and the drain terminal of _M7 are connected to the gate terminal of _M9 , the source terminal of _M9 is connected to the first terminal of R2, the _second terminal of R2 is connected to the drain terminal of _M10 to the output terminal, The drain terminal of M ₉ is connected to the input power supply terminal V _DD , the source terminal of M ₁₀ is grounded, and the gate terminal is connected to the output terminal of the high-gain operational amplifier.

Optionally, the startup circuit includes an eleventh MOS transistor M ₁₁ , a twelfth MOS transistor M ₁₂ , a thirteenth MOS transistor M ₁₃ , a fourteenth MOS transistor M ₁₄ and a fifteenth MOS transistor M ₁₅ ; wherein,

The source terminal of M ₁₁ , the source terminal of M ₁₃ and the source terminal of M ₁₅ are all connected to the input power supply terminal V _DD , the gate terminal of M ₁₁ and the gate terminal of M ₁₂ are connected to the output terminal, the drain terminal of M ₁₁ , the gate terminal of M ₁₂ Both the drain terminal of _M13 and the gate terminal of M13 are connected to the gate terminal of _M14 , the drain terminal of _M13 and the drain terminal of _M14 are both connected to the gate terminal of _M15 , and the drain terminal of _M15 is connected to the output of the high-gain operational amplifier terminal V _ref .

Optionally, in the fully saturated MOSFET bandgap reference source, M ₁ -M ₁₅ are SiMOSFETs or SiCMOSFETs.

Optionally, when M ₁ -M ₁₅ are SiC MOSFETs, the current generation circuit is used to generate a negative temperature coefficient current that is negatively correlated with temperature change, and the temperature compensation generation circuit is used to generate a positive temperature coefficient voltage that is positively correlated with temperature change.

Optionally, when M ₁ to M ₁₅ are SiMOSFETs, the current generation circuit is used to generate a positive temperature coefficient current that is positively correlated with temperature change, and the temperature compensation generation circuit is used to generate a negative temperature coefficient current that is negatively correlated with temperature change Voltage.

The principle of the fully saturated MOSFET bandgap reference source provided by the present invention is described below:

In the above-mentioned bandgap reference source, all MOS transistors are biased in the saturation region, the width-to _- length ratios _of M3 and M4 in the current generation circuit are the same, and the currents of the two branches are equal and both are _I1 , which is determined by the high-gain operational amplifier The clamp function is available as:

I ₁ R ₁ +|V _GS1 |＝|V _GS2 |#(1)

and have

Simultaneously (1), (2), (3) can be obtained

Let formula (4) in

so

Further, the branch current of _M5 and _M6 in the temperature compensation generating circuit is _I2 , then:

Then the size ratio of M ₄ and M ₆ is the ratio of current I ₁ and I ₂ , so:

Available:

Combine (7) and (9) to get:

Let formula (10)

Available:

It can be seen from Figure 2

|V _GS5 |＝|V _GS7 |#(13)

Further, the branch current of M ₇ and M ₈ is I ₃ , then:

Combine (12), (13) and (14) to get:

Let formula (15):

To simplify the formula, let:

but

The voltage at point A in Figure 2 is V _A , then

|V _GS8 |＝V _A #(20)

and have

Simultaneously (12), (13), (14) can be obtained

Let formula (22) in

Available

In the part of the reference source output circuit, the current of the branch where M ₁₀ is located is I ₄ , then

The size ratio of M ₄ and M ₁₀ is the ratio of current I ₁ and I ₂ , so:

Available:

Combine (25) and (27) to get

Let the formula (28)

Available:

output voltage is V _ref , the

V _ref =V _A -V _GS9 -N ₃ I ₁ R ₂ #(31)

Combining formulas (6), (24), (30) and (31) can get:

Let formula (31) in

Available:

It should be understood that the threshold voltage and mobility of MOSFET are both physical quantities related to temperature. Under different semiconductor materials, the correlation change function with temperature may not be clear. According to formula (33), it can be considered that

By adjusting the coefficients K ₅ and K ₆ , the output voltage V _ref weakly correlated with temperature within a certain temperature range can be obtained.

Further, M ₁₁ , M ₁₂ , M ₁₃ , M ₁₄ and M ₁₅ form a start-up circuit, and when the initial output reference voltage is not established, the two-stage inverter formed by M ₁₁ , M ₁₂ , M ₁₃ and M ₁₄ turns M ₁₅ to the gate Pull down the terminal voltage, turn _{on M15} , inject charges into the gate terminals _of M3, M4, _M6 and _M10 , raise the gate terminal level, and generate current in _M3 , _M4 , _M6 and _M10 , after the output reference voltage is established, the two-stage inverter raises the gate voltage of M ₁₅ , turns off M ₁₅ , and disconnects the start-up circuit, which will not affect the normal operation of the bandgap reference source.

Fig. 3 is a temperature characteristic curve of the output voltage of a fully saturated MOSFET bandgap reference source provided by an embodiment of the present invention. Please refer to Figure 3, when the condition is V _DD =5V and the temperature range is -20°C-180°C, the temperature characteristic curve is parabolic, and the calculated temperature drift coefficient is only 18ppm/°C, so the temperature drift coefficient is relatively Good control.

Fig. 4 is a schematic diagram of the linear adjustment rate of a fully saturated MOSFET bandgap reference source provided by an embodiment of the present invention. Please refer to Figure 4. The vertical axis represents the output voltage Vref. When the temperature T=300K and the input voltage variation range is 3-15V, the output voltage is always about 0.965V during the input voltage variation process, and the input voltage is at When 3V-15V changes, the difference only changes 3.5mV, and the linear adjustment rate is 0.362%.

Can know by above-mentioned each embodiment, beneficial effect of the present invention is:

The present invention provides a fully saturated MOSFET bandgap reference source, including: a start-up circuit, a current generation circuit, a temperature compensation generation circuit and a reference source output circuit; wherein, the current generation circuit can use the operational amplifier clamp to generate and M ₁ , M ₂ The temperature coefficient of the carrier mobility of the MOS tube is inversely or proportional to the current. For example, when the temperature coefficient of the carrier mobility of the MOS tube of M ₁ and M ₂ is positive, the current generation circuit can generate CTAT current, which is a negative temperature coefficient. The current, and then the temperature compensation generation circuit reverses the negative temperature coefficient current by using the common source to generate a positive temperature coefficient voltage, so that the reference source output circuit can offset the combination of positive and negative temperature coefficient physical quantities. The fully saturated MOSFET bandgap reference source provided by the invention can adapt to the temperature characteristics of MOS tubes of different semiconductor materials, has universal applicability, has low circuit structure complexity, and can be used to generate reference voltages in various circuits.

In addition, the bandgap reference source provided by the present invention adopts a full MOS structure, and the MOS transistors are all biased to work in the saturation region, which greatly reduces the requirements for the process.

In the description of the present invention, the terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features. Thus, a feature defined as "first" and "second" may explicitly or implicitly include one or more of these features. In the description of the present invention, "plurality" means two or more, unless otherwise specifically defined.

In the description of this specification, descriptions referring to the terms "one embodiment", "some embodiments", "example", "specific examples", or "some examples" mean that specific features described in connection with the embodiment or example , structure, material or feature is included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the specific features, structures, materials or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification.

Although the present application has been described in conjunction with various embodiments here, however, in the process of implementing the claimed application, those skilled in the art can understand and Other variations of the disclosed embodiments are implemented. In the claims, the word "comprising" does not exclude other components or steps, and "a" or "an" does not exclude a plurality. A single processor or other unit may fulfill the functions of several items recited in the claims. The mere fact that certain measures are recited in mutually different dependent claims does not indicate that these measures cannot be combined to advantage.

The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be assumed that the specific implementation of the present invention is limited to these descriptions. For those of ordinary skill in the technical field of the present invention, without departing from the concept of the present invention, some simple deduction or replacement can be made, which should be regarded as belonging to the protection scope of the present invention.

Claims (8)

1. A fully saturated MOSFET bandgap reference source, comprising: the circuit comprises a starting circuit, a current generating circuit, a temperature compensation generating circuit and a reference source output circuit; wherein,

the current generating circuit is used for generating temperature coefficient current which has a first correlation with temperature change;

the temperature compensation generating circuit is used for generating temperature coefficient voltage which has second correlation with temperature change;

the reference source output circuit is used for generating a reference voltage by using the temperature coefficient current and the temperature coefficient voltage and outputting the reference voltage to a starting circuit;

the starting circuit is used for ensuring that the fully saturated MOSFET band-gap reference source is separated from a non-ideal working point and enters a normal working point in the starting process.

2. According to the claimsThe method for obtaining the fully-saturated MOSFET band-gap reference source 1 is characterized by comprising an input power supply end; the current generation circuit includes: a first resistor R ₁ A first MOS transistor M ₁ A second MOS transistor M ₂ And a third MOS transistor M ₃ Fourth MOS transistor M ₄ And a high gain operational amplifier; wherein,

R ₁ first end of (A) and (M) ₂ Is connected to the input power terminal, M ₃ Source end and M ₄ Is grounded at the source end, R ₁ Second terminal and M ₁ Source end connection of M ₁ Gate terminal, drain terminal and M ₃ Are all connected to the non-inverting terminal of the high gain operational amplifier, M ₂ Gate terminal, drain terminal and M ₄ Are all connected to the inverting terminal of a high gain operational amplifier, M ₃ And M ₄ The gate terminals of the high-gain operational amplifier are connected with the output terminal of the high-gain operational amplifier.

3. The fully saturated MOSFET bandgap reference source as claimed in claim 2, wherein the temperature compensation generating circuit comprises a fifth MOS transistor M ₅ And a sixth MOS transistor M ₆ And a seventh MOS transistor M ₇ And an eighth MOS transistor M ₈ (ii) a Wherein,

M ₅ source end and M ₇ Is connected to the input power terminal, M ₆ Source end, M ₈ The gate terminal and the drain terminal of (1) are grounded, M ₅ Gate and drain terminals of and M ₆ All drain terminals of the same M ₇ Gate terminal connection of (C), M ₆ The gate terminal of the high gain operational amplifier is connected with the output terminal of the high gain operational amplifier.

4. The fully saturated MOSFET bandgap reference source of claim 3, further comprising an output terminal; the reference source output circuit includes: a second resistor R ₂ The ninth MOS transistor M ₉ And a tenth MOS transistor M ₁₀ (ii) a Wherein,

M ₈ source end and M ₇ Is connected to M ₉ Gate terminal of (1), M ₉ Source end and R of ₂ Is connected to a first end of R ₂ Second terminal and M ₁₀ Is connected with the drain endIs connected to the output terminal, M ₉ Is connected to the input power supply terminal, M ₁₀ The source end of the high-gain operational amplifier is grounded, and the grid end of the high-gain operational amplifier is connected with the output end of the high-gain operational amplifier.

5. The fully saturated MOSFET bandgap reference source of claim 4, wherein the start-up circuit comprises an eleventh MOS transistor M ₁₁ Twelfth MOS transistor M ₁₂ Thirteenth MOS transistor M ₁₃ Fourteenth MOS transistor M ₁₄ And a fifteenth MOS transistor M ₁₅ (ii) a Wherein,

M ₁₁ source end, M ₁₃ Source end and M ₁₅ Are all connected with the input power supply terminal, M ₁₁ And M ₁₂ Is connected to the output terminal, M ₁₁ Drain terminal, M ₁₂ Drain terminal and M ₁₃ Are all connected to M ₁₄ Gate terminal of, M ₁₃ And M ₁₄ Are all connected to M ₁₅ Gate terminal of (1), M ₁₅ The drain terminal of the high-gain operational amplifier is connected with the output terminal of the high-gain operational amplifier.

6. The fully saturated MOSFET bandgap reference source of claim 5, wherein M is ₁ ～M ₁₅ Is SiMOSFET or SiMOSFET.

7. The fully saturated MOSFET bandgap reference source as claimed in claim 6, wherein when M is ₁ ～M ₁₅ When the temperature compensation circuit is a SiCMOS MOSFET, the current generating circuit is used for generating negative temperature coefficient current which is in negative correlation with temperature change, and the temperature compensation generating circuit is used for generating positive temperature coefficient voltage which is in positive correlation with temperature change.

8. The fully saturated MOSFET bandgap reference source of claim 6, wherein when M is greater than M ₁ ～M ₁₅ When the voltage is SiMOSFET, the current generating circuit is used for generating positive temperature coefficient current which is positively correlated with temperature change, and the temperature compensation generating circuit is used for generating negative temperature coefficient voltage which is negatively correlated with temperature change.

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