CN115309227A - Fully-saturated MOSFET band-gap reference source - Google Patents
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- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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Abstract
The invention discloses a fully saturated MOSFET band-gap reference source, which comprises: the circuit comprises a starting circuit, a current generating circuit, a temperature compensation generating circuit and a reference source output circuit; the current generating circuit is used for generating temperature coefficient current which has a first correlation with temperature change; the temperature compensation generating circuit is used for generating temperature coefficient voltage which has second correlation with temperature change; the reference source output circuit is used for generating reference voltage by using the temperature coefficient current and the temperature coefficient voltage and outputting the reference voltage to the starting circuit; the starting circuit is used for ensuring that the fully saturated MOSFET band-gap reference source is separated from a non-ideal working point and enters a normal working point in the starting process. The invention adopts the full MOS structure, the MOS tube is biased to work in the saturation region, the process requirement is greatly reduced, the MOS tube temperature characteristic of different semiconductor materials can be adapted, the universality is realized, meanwhile, the circuit structure complexity is low, and the MOS tube temperature control circuit can be widely applied to various circuits to generate reference voltage.
Description
Technical Field
The invention belongs to the technical field of integrated circuits, and particularly relates to a fully-saturated MOSFET band-gap reference source.
Background
The reference voltage source is an indispensable basic building block in an integrated circuit, is widely applied to a power conversion circuit, a high-voltage driving circuit and an analog-digital converter, and is used for providing a reference voltage which is weakly related to factors such as temperature, power supply voltage and process for other modules in the circuit.
However, the method is limited by certain process conditions such as a SiC MOSFET process, cannot adopt a classical bandgap reference structure like a Si-based structure, and because a full MOS bandgap reference circuit structure mostly utilizes a sub-threshold region MOS transistor to realize temperature compensation, it is limited by modeling, and cannot realize accurate simulation. In addition, for some new material devices such as SiC MOSFETs, the mobility of the P-type transistor and the N-type transistor changes with temperature, unlike the conventional Si-based MOSFET, and the mobility of the P-type transistor and the N-type transistor increases with increasing temperature, so that positive and negative compensation cannot be performed by direct superposition.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a fully saturated MOSFET band-gap reference source. The technical problem to be solved by the invention is realized by the following technical scheme:
the invention provides a fully saturated MOSFET band gap reference source, which is characterized by comprising: the circuit comprises a starting circuit, a current generating circuit, a temperature compensation generating circuit and a reference source output circuit; wherein,
the current generating circuit is used for generating temperature coefficient current which has a first correlation with temperature change;
the temperature compensation generating circuit is used for generating temperature coefficient voltage which has second correlation with temperature change;
the reference source output circuit is used for generating a reference voltage by using the temperature coefficient current and the temperature coefficient voltage and outputting the reference voltage to the starting circuit;
the starting circuit is used for ensuring that the fully saturated MOSFET band-gap reference source is separated from a non-ideal working point and enters a normal working point in the starting process.
In the present inventionIn one embodiment, the system comprises an input power supply terminal; the current generation circuit includes: a first resistor R 1 A first MOS transistor M 1 A second MOS transistor M 2 And a third MOS transistor M 3 Fourth MOS transistor M 4 And a high gain operational amplifier; wherein,
R 1 first end of (A) and (M) 2 Is connected to the input power terminal, M 3 Source end and M 4 Is grounded at the source end, R 1 Second terminal and M 1 Source end connection of M 1 Gate terminal, drain terminal and M 3 Are all connected to the non-inverting terminal of a high gain operational amplifier, M 2 Gate terminal, drain terminal and M 4 Are all connected to the inverting terminal of a high gain operational amplifier, M 3 And M 4 The grid ends of the high-gain operational amplifier are connected with the output end of the high-gain operational amplifier.
In one embodiment of the present invention, the temperature compensation generating circuit includes a fifth MOS transistor M 5 And a sixth MOS transistor M 6 And a seventh MOS transistor M 7 And an eighth MOS transistor M 8 (ii) a Wherein,
M 5 source end and M 7 Is connected to the input power supply terminal, M 6 Source end, M 8 The gate terminal and the drain terminal of (1) are grounded, M 5 Gate and drain terminals of and M 6 All with M 7 Is connected to the gate terminal of M 6 The gate terminal of the high gain operational amplifier is connected with the output terminal of the high gain operational amplifier.
In one embodiment of the invention, the device further comprises an output end; the reference source output circuit includes: a second resistor R 2 And a ninth MOS transistor M 9 And a tenth MOS transistor M 10 (ii) a Wherein,
M 8 source end and M 7 Is connected to M 9 Gate terminal of (1), M 9 Source end and R of 2 Is connected to a first end of R 2 Second terminal and M 10 Is connected to the output terminal, M 9 Is connected to the input power supply terminal, M 10 The source end of the high-gain operational amplifier is grounded, and the grid end of the high-gain operational amplifier is connected with the output end of the high-gain operational amplifier.
In one embodiment of the present inventionIn an embodiment, the start-up circuit includes an eleventh MOS transistor M 11 Twelfth MOS transistor M 12 Thirteenth MOS transistor M 13 Fourteenth MOS transistor M 14 And a fifteenth MOS transistor M 15 (ii) a Wherein,
M 11 source end, M 13 Source terminal and M 15 Are all connected with the input power supply terminal, M 11 Gate terminal of (1) and M 12 Is connected to the output terminal, M 11 Drain terminal, M 12 Drain terminal and M 13 Are all connected to M 14 Gate terminal of, M 13 And M 14 Are all connected to M 15 Gate terminal of, M 15 The drain terminal of the high gain operational amplifier is connected with the output terminal of the high gain operational amplifier.
In one embodiment of the invention, M 1 ～M 15 Is SiMOSFET or SiMOSFET.
In one embodiment of the present invention, when M 1 ～M 15 When the temperature compensation circuit is a SiCMOS MOSFET, the current generating circuit is used for generating negative temperature coefficient current which is in negative correlation with temperature change, and the temperature compensation generating circuit is used for generating positive temperature coefficient voltage which is in positive correlation with temperature change.
In one embodiment of the present invention, when M 1 ～M 15 When the voltage is SiMOSFET, the current generating circuit is used for generating positive temperature coefficient current which is positively correlated with temperature change, and the temperature compensation generating circuit is used for generating negative temperature coefficient voltage which is negatively correlated with temperature change.
Compared with the prior art, the invention has the beneficial effects that:
the invention provides a fully saturated MOSFET band gap reference source, comprising: the circuit comprises a starting circuit, a current generating circuit, a temperature compensation generating circuit and a reference source output circuit; wherein the current generating circuit can utilize the operational amplifier clamp to generate M 1 、M 2 The MOS transistor has a current with a temperature coefficient of carrier mobility inversely proportional or directly proportional, such as when M 1 、M 2 When the Temperature coefficient of the carrier mobility of the MOS transistor is positive, the current generation circuit can generate CTAT (Complementary To Absolute Temperature) and Absolute TemperatureTemperature is inversely proportional) current, namely negative temperature coefficient current, and then the negative temperature coefficient current is reversed by the temperature compensation generating circuit by utilizing a common source to generate positive temperature coefficient voltage, so that the positive temperature coefficient and the negative temperature coefficient physical quantities are combined and offset by the reference source output circuit. The fully-saturated MOSFET band-gap reference source provided by the invention can adapt to the temperature characteristics of MOS tubes made of different semiconductor materials, has universality and low circuit structure complexity, and can be used for generating reference voltages in various circuits.
In addition, the band gap reference source provided by the invention adopts a full MOS structure, and MOS tubes are all biased to work in a saturation region, so that the process requirement is greatly reduced.
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Drawings
Fig. 1 is a schematic structural diagram of a fully saturated MOSFET bandgap reference source provided by an embodiment of the present invention;
FIG. 2 is a schematic circuit diagram of a fully saturated MOSFET bandgap reference source provided by an embodiment of the present invention;
FIG. 3 is a temperature characteristic of an output voltage of a fully saturated MOSFET bandgap reference source according to an embodiment of the present invention;
fig. 4 is a schematic diagram of a bandgap reference source linearity adjustment scheme for a fully saturated MOSFET according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
Fig. 1 is a schematic structural diagram of a fully saturated MOSFET bandgap reference source provided by an embodiment of the present invention. As shown in fig. 1, an embodiment of the present invention provides a fully saturated MOSFET bandgap reference source, including: the circuit comprises a starting circuit, a current generating circuit, a temperature compensation generating circuit and a reference source output circuit; wherein,
the current generating circuit is used for generating temperature coefficient current which has a first correlation with temperature change;
the temperature compensation generating circuit is used for generating temperature coefficient voltage which has second correlation with temperature change;
the reference source output circuit is used for generating a reference voltage by using the temperature coefficient current and the temperature coefficient voltage and outputting the reference voltage to the starting circuit;
and the starting circuit is used for ensuring that the fully saturated MOSFET band-gap reference source is separated from a non-ideal working point and enters a normal working point in the starting process.
Fig. 2 is a circuit schematic diagram of a fully saturated MOSFET bandgap reference source according to an embodiment of the present invention. Optionally, as shown in FIG. 2, the fully saturated MOSFET bandgap reference comprises an input power supply terminal V DD (ii) a The current generation circuit includes: a first resistor R 1 A first MOS transistor M 1 A second MOS transistor M 2 And a third MOS transistor M 3 Fourth MOS transistor M 4 And a high gain operational amplifier; wherein,
R 1 first end of (A) and (M) 2 Is connected to the input power supply terminal V DD ，M 3 Source terminal and M 4 Is grounded at the source end, R 1 Second terminal and M 1 Source end connection of M 1 Gate terminal, drain terminal and M 3 Are all connected to the non-inverting terminal of the high gain operational amplifier, M 2 Gate terminal, drain terminal and M 4 Are all connected to the inverting terminal of a high gain operational amplifier, M 3 And M 4 The grid ends of the two are connected with the output end V of the high-gain operational amplifier ref 。
It should be noted that, in the fully saturated MOSFET bandgap reference source provided by the present invention, the current generating circuit can utilize the operational amplifier clamp generation and M 1 、M 2 The MOS tube carrier mobility temperature coefficient is inversely proportional or directly proportional to the current. Illustratively, when M 1 、M 2 When the MOS tube carrier mobility temperature coefficient is positive, the current generating circuit can generate CTAT current, namely negative temperature coefficient current, and then the temperature compensation generating circuit reverses the negative temperature coefficient current by utilizing a common source to generate positive temperature coefficient voltage, so that the reference source output circuit combines and cancels positive and negative temperature coefficient physical quantities; on the contrary, when M 1 、M 2 When the MOS tube carrier mobility temperature coefficient is negative, the current generation circuit generates PTAT (Proportional to the absolute value of the temperature coefficient)To Absolute Temperature, which is in direct proportion To Absolute Temperature) current, namely positive Temperature coefficient current, and a Temperature compensation generating circuit reverses the positive Temperature coefficient current by utilizing a common source To generate negative Temperature coefficient voltage, so as To achieve the aim of combining and offsetting physical quantities of positive and negative Temperature coefficients.
Referring to fig. 2, in the present embodiment, the temperature compensation generating circuit includes a fifth MOS transistor M 5 And a sixth MOS transistor M 6 And a seventh MOS transistor M 7 And an eighth MOS transistor M 8 (ii) a Wherein,
M 5 source terminal and M 7 Is connected to the input power supply terminal V DD ，M 6 Source end, M 8 The gate terminal and the drain terminal of (1) are grounded, M 5 Gate and drain terminals of and M 6 All drain terminals of the same M 7 Is connected to the gate terminal of M 6 The gate terminal of the high gain operational amplifier is connected with the output terminal of the high gain operational amplifier.
Optionally, the fully saturated MOSFET bandgap reference source further comprises an output terminal; the reference source output circuit includes: a second resistor R 2 And a ninth MOS transistor M 9 And a tenth MOS transistor M 10 (ii) a Wherein,
M 8 source terminal and M 7 Is connected to M 9 Gate terminal of (1), M 9 Source end and R of 2 Is connected to a first end of R 2 Second terminal and M 10 Is connected to the output terminal, M 9 Drain terminal and input power terminal V DD Connection, M 10 The source end of the high-gain operational amplifier is grounded, and the grid end of the high-gain operational amplifier is connected with the output end of the high-gain operational amplifier.
Optionally, the starting circuit comprises an eleventh MOS transistor M 11 Twelfth MOS tube M 12 Thirteenth MOS transistor M 13 Fourteenth MOS transistor M 14 And a fifteenth MOS transistor M 15 (ii) a Wherein,
M 11 source end, M 13 Source terminal and M 15 Has a source end connected with an input power end V DD Connection, M 11 Gate terminal of (1) and M 12 Is connected to the output terminal, M 11 Drain terminal of (1), M 12 And M 13 Are all connected to M 14 Gate terminal of, M 13 And a drain terminal ofM 14 Are all connected to M 15 Gate terminal of (1), M 15 Is connected with the output end V of the high-gain operational amplifier ref 。
Optionally, in a fully saturated MOSFET bandgap reference source, M 1 ～M 15 Is SiMOSFET or SiMOSFET.
Alternatively, when M 1 ～M 15 In the case of a SiCMOS MOSFET, the current generating circuit is used for generating a negative temperature coefficient current which is in negative correlation with temperature change, and the temperature compensation generating circuit is used for generating a positive temperature coefficient voltage which is in positive correlation with temperature change.
Alternatively, when M 1 ～M 15 In the case of SiMOSFET, the current generating circuit is used for generating positive temperature coefficient current which is positively correlated with temperature change, and the temperature compensation generating circuit is used for generating negative temperature coefficient voltage which is negatively correlated with temperature change.
The principle of the fully saturated MOSFET bandgap reference source provided by the present invention is explained as follows:
in the band-gap reference source, MOS tubes are all biased in a saturation region, and M is arranged in a current generating circuit 3 And M 4 The width-length ratio is the same, and the two branches have equal current and are I 1 The clamping function of the high-gain operational amplifier can obtain:
I 1 R 1 +|V GS1 |＝|V GS2 |#(1)
and is provided with
The simultaneous (1), (2) and (3) can be obtained
Let in formula (4)
Therefore, it is
Further, M in the temperature compensation generating circuit 5 And M 6 The branch current is I 2 Then, there are:
then M 4 And M 6 The size ratio of (A) is the current I 1 And I 2 The ratio of (1) to (b):
the following can be obtained:
the simultaneous formulas (7) and (9) can obtain:
let in equation (10)
The following can be obtained:
as can be seen from FIG. 2
|V GS5 |＝|V GS7 |#(13)
Further, M 7 And M 8 The branch current is I 3 And then:
the simultaneous formulas (12), (13) and (14) can obtain:
let equation (15):
to simplify the formula, let:
then the
In FIG. 2, the voltage at point A is V A Then, then
|V GS8 |＝V A #(20)
And is provided with
The simultaneous formulas (12), (13) and (14) can be obtained
Let in equation (22)
Can obtain the product
In the reference source output circuit section, M 10 The current of the branch is I 4 Then, then
M 4 And M 10 The size ratio of (A) is the current I 1 And I 2 The ratio of (1) to (b):
the following can be obtained:
the simultaneous formulas (25) and (27) can be obtained
Let in equation (28)
The following can be obtained:
an output voltage of V ref Then, then
V ref ＝V A -V GS9 -N 3 I 1 R 2 #(31)
The simultaneous formulas (6), (24), (30) and (31) can obtain:
let in equation (31)
The following can be obtained:
it should be understood that the threshold voltage and mobility of the MOSFET are both temperature-dependent physical quantities, and the temperature-dependent variation function may not be clear for different semiconductor materials, and according to equation (33), it can be considered that
By adjusting the coefficient K 5 、K 6 So as to obtain the output voltage V weakly related with the temperature within a certain temperature range ref 。
Further, M 11 、M 12 、M 13 、M 14 And M 15 Forming a start-up circuit, when the initial output reference voltage is not established 11 、M 12 、M 13 、M 14 Formed two-stage inverter 15 The grid end voltage is pulled down and M is opened 15 To M 3 、M 4 、M 6 And M 10 The grid end of the transistor is injected with electric charges to raise the level of the grid end of the transistor so as to enable the M 3 ，M 4 ，M 6 And M 10 After the output reference voltage is established, the two-stage inverter outputs M 15 Raising grid voltage and turning off M 15 And the starting circuit is disconnected, so that the normal work of the band gap reference source cannot be influenced.
Fig. 3 is a temperature characteristic curve of an output voltage of a fully saturated MOSFET bandgap reference source according to an embodiment of the present invention. Please refer to fig. 3, under the condition of V DD And when the temperature is changed within the range of-20 ℃ -180 ℃, the temperature characteristic curve is parabolic, and the calculated temperature drift coefficient is only 18 ppm/DEG C, so that the temperature drift coefficient is well controlled.
Fig. 4 is a schematic diagram of a bandgap reference source linearity adjustment ratio of a fully saturated MOSFET according to an embodiment of the present invention. Referring to fig. 4, the vertical axis represents the output voltage Vref, and under the condition of the temperature T =300K and the input voltage variation range of 3-15V, the output voltage is always about 0.965V during the variation of the input voltage, and when the input voltage varies from 3V to 15V, the difference only varies by 3.5mV, and the linear adjustment rate is 0.362%.
The beneficial effects of the invention are that:
the invention provides a fully saturated MOSFET band gap reference source, comprising: starting circuit, current generating circuit and temperature compensation generating circuitA reference source output circuit; wherein, the current generation circuit can utilize the operational amplifier clamp to generate and M 1 、M 2 The MOS transistor has a current with a temperature coefficient of carrier mobility inversely proportional or directly proportional, such as when M 1 、M 2 When the MOS tube carrier mobility temperature coefficient is positive, the current generating circuit can generate CTAT current, namely negative temperature coefficient current, and then the temperature compensation generating circuit reverses the negative temperature coefficient current by utilizing a common source to generate positive temperature coefficient voltage, so that the reference source output circuit balances out the combination of positive and negative temperature coefficient physical quantities. The fully saturated MOSFET band-gap reference source provided by the invention can adapt to the temperature characteristics of MOS tubes made of different semiconductor materials, has universality and low circuit structure complexity, and can be used for generating reference voltages in various circuits.
In addition, the band gap reference source provided by the invention adopts a full MOS structure, and MOS tubes are all biased to work in a saturation region, so that the process requirement is greatly reduced.
In the description of the present invention, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the description of the specification, reference to the description of "one embodiment," "some embodiments," "an example," "a specific example," or "some examples" or the like means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples described in this specification can be combined and combined by those skilled in the art.
While the present application has been described in connection with various embodiments, other variations to the disclosed embodiments can be understood and effected by those skilled in the art in practicing the claimed application, from a review of the drawings, the disclosure, and the appended claims. In the claims, the word "comprising" does not exclude other elements or steps, and the word "a" or "an" does not exclude a plurality. A single processor or other unit may fulfill the functions of several items recited in the claims. The mere fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measures cannot be used to advantage.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (8)
1. A fully saturated MOSFET bandgap reference source, comprising: the circuit comprises a starting circuit, a current generating circuit, a temperature compensation generating circuit and a reference source output circuit; wherein,
the current generating circuit is used for generating temperature coefficient current which has a first correlation with temperature change;
the temperature compensation generating circuit is used for generating temperature coefficient voltage which has second correlation with temperature change;
the reference source output circuit is used for generating a reference voltage by using the temperature coefficient current and the temperature coefficient voltage and outputting the reference voltage to a starting circuit;
the starting circuit is used for ensuring that the fully saturated MOSFET band-gap reference source is separated from a non-ideal working point and enters a normal working point in the starting process.
2. According to the claimsThe method for obtaining the fully-saturated MOSFET band-gap reference source 1 is characterized by comprising an input power supply end; the current generation circuit includes: a first resistor R 1 A first MOS transistor M 1 A second MOS transistor M 2 And a third MOS transistor M 3 Fourth MOS transistor M 4 And a high gain operational amplifier; wherein,
R 1 first end of (A) and (M) 2 Is connected to the input power terminal, M 3 Source end and M 4 Is grounded at the source end, R 1 Second terminal and M 1 Source end connection of M 1 Gate terminal, drain terminal and M 3 Are all connected to the non-inverting terminal of the high gain operational amplifier, M 2 Gate terminal, drain terminal and M 4 Are all connected to the inverting terminal of a high gain operational amplifier, M 3 And M 4 The gate terminals of the high-gain operational amplifier are connected with the output terminal of the high-gain operational amplifier.
3. The fully saturated MOSFET bandgap reference source as claimed in claim 2, wherein the temperature compensation generating circuit comprises a fifth MOS transistor M 5 And a sixth MOS transistor M 6 And a seventh MOS transistor M 7 And an eighth MOS transistor M 8 (ii) a Wherein,
M 5 source end and M 7 Is connected to the input power terminal, M 6 Source end, M 8 The gate terminal and the drain terminal of (1) are grounded, M 5 Gate and drain terminals of and M 6 All drain terminals of the same M 7 Gate terminal connection of (C), M 6 The gate terminal of the high gain operational amplifier is connected with the output terminal of the high gain operational amplifier.
4. The fully saturated MOSFET bandgap reference source of claim 3, further comprising an output terminal; the reference source output circuit includes: a second resistor R 2 The ninth MOS transistor M 9 And a tenth MOS transistor M 10 (ii) a Wherein,
M 8 source end and M 7 Is connected to M 9 Gate terminal of (1), M 9 Source end and R of 2 Is connected to a first end of R 2 Second terminal and M 10 Is connected with the drain endIs connected to the output terminal, M 9 Is connected to the input power supply terminal, M 10 The source end of the high-gain operational amplifier is grounded, and the grid end of the high-gain operational amplifier is connected with the output end of the high-gain operational amplifier.
5. The fully saturated MOSFET bandgap reference source of claim 4, wherein the start-up circuit comprises an eleventh MOS transistor M 11 Twelfth MOS transistor M 12 Thirteenth MOS transistor M 13 Fourteenth MOS transistor M 14 And a fifteenth MOS transistor M 15 (ii) a Wherein,
M 11 source end, M 13 Source end and M 15 Are all connected with the input power supply terminal, M 11 And M 12 Is connected to the output terminal, M 11 Drain terminal, M 12 Drain terminal and M 13 Are all connected to M 14 Gate terminal of, M 13 And M 14 Are all connected to M 15 Gate terminal of (1), M 15 The drain terminal of the high-gain operational amplifier is connected with the output terminal of the high-gain operational amplifier.
6. The fully saturated MOSFET bandgap reference source of claim 5, wherein M is 1 ～M 15 Is SiMOSFET or SiMOSFET.
7. The fully saturated MOSFET bandgap reference source as claimed in claim 6, wherein when M is 1 ～M 15 When the temperature compensation circuit is a SiCMOS MOSFET, the current generating circuit is used for generating negative temperature coefficient current which is in negative correlation with temperature change, and the temperature compensation generating circuit is used for generating positive temperature coefficient voltage which is in positive correlation with temperature change.
8. The fully saturated MOSFET bandgap reference source of claim 6, wherein when M is greater than M 1 ～M 15 When the voltage is SiMOSFET, the current generating circuit is used for generating positive temperature coefficient current which is positively correlated with temperature change, and the temperature compensation generating circuit is used for generating negative temperature coefficient voltage which is negatively correlated with temperature change.
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