CN108052151A - A kind of bandgap voltage reference without clamped amplifier - Google Patents
A kind of bandgap voltage reference without clamped amplifier Download PDFInfo
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- CN108052151A CN108052151A CN201711338442.7A CN201711338442A CN108052151A CN 108052151 A CN108052151 A CN 108052151A CN 201711338442 A CN201711338442 A CN 201711338442A CN 108052151 A CN108052151 A CN 108052151A
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/575—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices characterised by the feedback circuit
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Abstract
The invention discloses a kind of bandgap voltage reference without clamped amplifier, including：Start-up circuit and band gap core circuit, wherein：The input terminal of start-up circuit is connected with the output terminal of band gap core circuit, the output terminal of start-up circuit is connected with the input terminal of band gap core circuit, the output of band gap core circuit is reference voltage source, start-up circuit be serially connected with supply voltage and systematically between, band gap core circuit be serially connected with supply voltage and systematically between；Start-up circuit is used to provide starting current for band gap core circuit；Band gap core circuit is used to generate band-gap reference supply voltage.The present invention compared with prior art in bandgap voltage reference, with good anti-mains fluctuations performance, bandgap voltage reference provided by the invention can be widely applied to application scenario wider to bandgap voltage reference voltage power supply area requirement and higher to band-gap reference area requirements.
Description
Technical field
The present invention relates to semiconductor integrated circuit technology field, more particularly to a kind of band-gap reference electricity without clamped amplifier
Potential source.
Background technology
At present, reference voltage source has been used as indispensable basic module in semiconductor integrated circuit, is widely used in and puts
In big device, analog-digital converter, digital analog converter, radio frequency, sensor and power management chip.Traditional reference voltage source includes base
Voltage reference in Zener diode reverse breakdown characteristics, the voltage reference based on PN junction forward conduction characteristic and band-gap reference etc.
A variety of realization methods, wherein, since band-gap reference has many advantages, such as high-precision, Low Drift Temperature and high PSRR, it obtains
Extensive use.
As shown in Figure 1 for no amplifier bandgap voltage reference of the prior art, two NPN triode Q1s and Q2 are utilized
The difference DELTA VBE of base emitter voltage VBE generates the voltage of positive temperature coefficient, using the VBE of Q3 generates negative temperature system
Several voltage, wherein, the emitter junction area ratio of two NPN triode Q1s and Q2 are 1:8, the breadth length ratio of metal-oxide-semiconductor M1, M2 and M3
For 1:1:1, wherein, the expression formula of bandgap voltage reference VBG is：Wherein, VBE_Q3 NPN
The base voltage of triode Q3, VT are the blanking voltage of NPN triode Q3, and the negative temperature coefficient of VEB is about -2mV/ DEG C, VT's
Positive temperature coefficient is about+0.085mV/ DEG C, by choosing suitable R1 and R2 resistance values, can obtain the band-gap reference of zero-temperature coefficient
Voltage.
But, it is contemplated that the complete expression of the common base direct current voltage equation of bipolar transistor, i.e. Ai Baisi-
More (Ebers-Moll) equation：Wherein, а is straight for common base
Flow short-circuit current amplification factor；IES is critical saturation emission electrode current；Q is electron charge；VBE is base voltage and emitter
The difference of voltage；K is Boltzmann constant；ICS is critical saturation collector current；VBC is base voltage and collector voltage
Difference.When mains voltage variations, the difference of the VBC of two NPN triode Q1s and Q2 change greatly, and cause band-gap reference defeated
Go out voltage VBG to change greatly, therefore, band-gap reference of the prior art can not be applied to the larger field of mains voltage variations scope
It closes.
The content of the invention
It is an object of the invention to propose a kind of bandgap voltage reference without clamped amplifier, to solve band in the prior art
The problem of anti-mains voltage variations characteristic of gap reference voltage source is poor.
In order to achieve the above objectives, the present invention provides following technical schemes：
A kind of bandgap voltage reference without clamped amplifier, including：Start-up circuit and band gap core circuit, wherein：
The input terminal of the start-up circuit is connected with the output terminal of the band gap core circuit, the output of the start-up circuit
End is connected with the input terminal of the band gap core circuit, and the output of the band gap core circuit is reference voltage source, described to open
Dynamic circuit be serially connected with supply voltage and systematically between, the band gap core circuit is serially connected with the supply voltage and the system
Between ground；
The start-up circuit is used to provide starting current for the band gap core circuit；
The band gap core circuit is used to generate band-gap reference supply voltage.
Preferably, the start-up circuit includes：First switch pipe, second switch pipe, the 3rd switching tube and first resistor,
In：
The grid of the first switch pipe is as the input terminal of the start-up circuit and the output of the band gap core circuit
End is connected；
The source electrode of the first switch pipe is connected with the source electrode of the second switch pipe, common port and the first resistor
One end be connected, the other end of the first resistor is connected with the supply voltage；
The grid of the second switch pipe is connected with source electrode, and the source electrode of the 3rd switching tube is as the start-up circuit
Output terminal is connected with the input terminal of the band gap core circuit；
The draining of the first switch pipe, the drain electrode of the second switch pipe is connected with the drain electrode of the 3rd switching tube,
And systematically it is connected with described.
Preferably, the first switch pipe, the second switch pipe and the 3rd switching tube are NMOS tube.
Preferably, the band gap core circuit includes：4th switching tube, the 5th switching tube, the 6th switching tube, the 7th switch
Pipe, the 8th switching tube, the 9th switching tube, the tenth switching tube, second resistance, 3rd resistor, the 4th resistance, the 5th resistance, the 6th
Resistance, the 7th resistance, the 8th resistance, the 9th resistance, first switch, second switch, third switch, the 4th switch, the first NPN tri-
Pole pipe and the second NPN triode, wherein：
The source electrode of the draining of 4th switching tube, the drain electrode of the 5th switching tube and the tenth switching tube with it is described
Supply voltage is connected, and the grid of the 4th switching tube is connected with the grid of the 5th switching tube；
The source electrode of 4th switching tube is connected with the drain electrode of the described 6th switch, the grid of the 6th switching tube and institute
The grid for stating the 7th switching tube is connected, and the source electrode of the 6th switching tube is connected with the grid of the 4th switching tube, and described
The source electrode of five switches is connected with the drain electrode of the 7th switching tube；
The source electrode of 6th switching tube is connected with one end of the second resistance, the other end of the second resistance and institute
The grid for stating the 6th switching tube is connected, and the other end of the second resistance is connected with the source electrode of the 8th switching tube, public
It holds and is connected as the input terminal of the band gap core circuit with the output terminal of the start-up circuit；
The drain electrode of 8th switching tube is connected with the collector of first NPN triode, the 8th switching tube
Grid is connected with the grid of the 9th switching tube, the source electrode phase of the grid and the 9th switching tube of the 9th switching tube
Even, the source electrode of the 9th switching tube is connected with the source electrode of the 7th switching tube, common port and the tenth switching tube
Grid is connected；
The base stage of first NPN triode is connected with the base stage of second NPN triode, tri- poles of the first NPN
The emitter of pipe is connected with one end of the 3rd resistor, the other end of the 3rd resistor and second NPN triode
Emitter is connected, and common port is connected with one end of the 4th resistance, the other end of the 4th resistance and the described 9th electricity
One end of resistance is connected, and common port is systematically connected with described；
5th resistance, the 6th resistance, the 7th resistance, the 8th resistance and the 9th resistance are successively
Connection, one end of the 5th resistance are connected with the drain electrode of the tenth switching tube, common port and the one of the first switch
End is connected；
The common port of 5th resistance and the 6th resistance is connected with the second switch, tri- poles of the 2nd NPN
The base stage of pipe is connected with the common port of the 6th resistance and the 7th resistance, and is connected with one end of the described 3rd switch,
The common port of 7th resistance and the 8th resistance is connected with one end of the described 4th switch；
The other end of the first switch, the other end of the second switch, the other end and described of the 3rd switch
The other end of 4th switch is connected, output terminal of the common port as the band gap core circuit.
Preferably, second NPN triode, the 9th switching tube, the tenth switching tube, the 5th resistance,
6th resistance, the 7th resistance, the 8th resistance and the 9th resistance form feedback loop；
First NPN triode, the 3rd resistor, eight switching tube, the 4th switching tube, the described 6th open
Guan Guan, the second resistance, the 5th switching tube, the 7th switching tube, second NPN triode, the 9th switching tube,
Tenth switching tube, the 5th resistance, the 6th resistance, the 7th resistance, the 8th resistance and the described 9th
Resistance forms regenerative feedback loop；
The loop gain of the feedback loop is more than the loop gain of the regenerative feedback loop.
Preferably, the 4th switching tube, the 5th switching tube, the 6th switching tube and the 7th switching tube are
PMOS tube.
Preferably, the 8th switching tube, the 9th switching tube and the tenth switching tube are NMOS tube.
It can be seen via above technical scheme that compared with prior art, the invention discloses a kind of bands without clamped amplifier
Gap reference voltage source, including：Start-up circuit and band gap core circuit, wherein：The input terminal of start-up circuit and band gap core circuit
Output terminal be connected, the output terminal of start-up circuit is connected with the input terminal of band gap core circuit, and the output of band gap core circuit is
On the basis of voltage source, start-up circuit be serially connected with supply voltage and systematically between, band gap core circuit be serially connected with supply voltage and
Between systematically；Start-up circuit is used to provide starting current for band gap core circuit；Band gap core circuit is used to generate band gap base
Quasi- supply voltage.The present invention compared with prior art in without clamped amplifier band-gap reference, there are good anti-mains fluctuations
Performance；And being not required to, which increases buffer amplifier circuit, trims bandgap voltage reference voltage to realize, and does not change temperature
Coefficient, has greatly saved the area of circuit, and bandgap voltage reference provided by the invention can be widely applied to band-gap reference
Wider and higher to the band-gap reference area requirements application scenario of voltage source voltage power supply area requirement.
Description of the drawings
It in order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention, for those of ordinary skill in the art, without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is the circuit diagram of the bandgap voltage reference of the prior art without clamped amplifier；
Fig. 2 is a kind of circuit block diagram of the bandgap voltage reference without clamped amplifier provided in an embodiment of the present invention；
Fig. 3 is a kind of circuit diagram of the bandgap voltage reference without clamped amplifier provided in an embodiment of the present invention；
Fig. 4 is that the bandgap voltage reference of the prior art without clamped amplifier exports VBG with the imitative of mains voltage variations
True result；
Fig. 5 is that the band-gap reference provided in an embodiment of the present invention without clamped amplifier exports VBG with the imitative of mains voltage variations
True result.
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other without making creative work
Embodiment belongs to the scope of protection of the invention.
It is shown in Figure 2, the bandgap voltage reference provided in an embodiment of the present invention without clamped amplifier, including：Start electricity
Road 101 and band gap core circuit 102, wherein：
The input terminal of the start-up circuit 101 is connected with the output terminal of the band gap core circuit 102, the start-up circuit
101 output terminal is connected with the input terminal of the band gap core circuit 102, and the output of the band gap core circuit 102 is base
Reference voltage source VGB, the start-up circuit 101 be serially connected with supply voltage VCC and systematically between, the band gap core circuit 102
Be serially connected with the supply voltage VCC and it is described systematically between, the start-up circuit for the band gap core circuit for providing
Starting current；The band gap core circuit is used to generate band-gap reference supply voltage.
Shown in Figure 3, start-up circuit 101 described above includes：First switch pipe M1, second switch pipe M2, the 3rd open
Pipe M3 and first resistor R1 is closed, wherein：
Input terminal and the band gap core circuit 102 of the grid of the first switch pipe M1 as the start-up circuit V
Output terminal be connected；The source electrode of the first switch pipe M1 is connected with the source electrode of the second switch pipe M2, common port and institute
The one end for stating first resistor R1 is connected, and the other end of the first resistor R1 is connected with the supply voltage VCC；Described second opens
The grid for closing pipe M2 is connected with source electrode, the output terminal and institute of the source electrode of the 3rd switching tube M3 as the start-up circuit 101
The input terminal for stating band gap core circuit 102 is connected；The draining of the first switch pipe M1, the drain electrode of the second switch pipe M2 and
The drain electrode of the 3rd switching tube M3 is connected, and is systematically connected with described.
Preferably, first switch pipe M1 described above, the second switch pipe M2 and the 3rd switching tube M3 are NMOS
Pipe.
Shown in Figure 3, band gap core circuit 102 described above includes：4th switching tube M4, the 5th switching tube M5,
Six switching tube M6, the 7th switching tube M7, the 8th switching tube M8, the 9th switching tube M9, the tenth switching tube M10, second resistance R2,
Three resistance R3, the 4th resistance R4, the 5th resistance R5, the 6th resistance R6, the 7th resistance R7, the 8th resistance R8, the 9th resistance R9,
One switch S1, second switch S2, the 3rd switch S3, the 4th switch S4, the first NPN triode Q1 and the second NPN triode Q2,
In：
The source of the draining of the 4th switching tube M4, the drain electrode of the 5th switching tube M5 and the tenth switching tube M10
Pole is connected with the supply voltage VCC, and the grid of the 4th switching tube M4 is connected with the grid of the 5th switching tube M5；Institute
The source electrode for stating the 4th switching tube M4 is connected with the drain electrode of the 6th switching tube M6, the grid of the 6th switching tube M6 with it is described
The grid of 7th switching tube M7 is connected, and the source electrode of the 6th switching tube M6 is connected with the grid of the 4th switching tube M4, institute
The source electrode for stating the 5th switching tube M5 is connected with the drain electrode of the 7th switching tube M7.
The source electrode of the 6th switching tube M6 is connected with one end of the second resistance R2, and the second resistance R2's is another
End is connected with the grid of the 6th switching tube M6, the source electrode of the other end of the second resistance R2 and the 8th switching tube M8
It is connected, common port is connected as the input terminal of the band gap core circuit 102 with the output terminal of the start-up circuit 101.
The drain electrode of the 8th switching tube M8 is connected with the collector of first NPN triode Q1, the 8th switch
The grid of pipe M8 is connected with the grid of the 9th switching tube M9, grid and the 9th switching tube of the 9th switching tube M9
The source electrode of M9 is connected, and the source electrode of the 9th switching tube M9 is connected with the source electrode of the 7th switching tube M7, common port and institute
The grid for stating the tenth switching tube M10 is connected.
The base stage of first NPN triode Q1 is connected with the base stage of the second NPN triode Q2, the first NPN
The emitter of triode Q1 is connected with one end of the 3rd resistor R3, the other end of the 3rd resistor R3 and described second
The emitter of NPN triode Q2 is connected, and common port is connected with one end of the 4th resistance R4, and the 4th resistance R4's is another
One end is connected with one end of the 9th resistance R9, and common port is systematically connected with described.
The 5th resistance R5, the 6th resistance R6, the 7th resistance R7, the 8th resistance R8 and the described 9th
Resistance R9 is sequentially connected, and one end of the 5th resistance R5 is connected with the drain electrode of the tenth switching tube M10, common port and institute
The one end for stating first switch S1 is connected.
The common port of the 5th resistance R5 and the 6th resistance R6 is connected with the second switch S2, and described second
The base stage of NPN triode Q2 is connected with the common port of the 6th resistance R6 and the 7th resistance R7, and is opened with the described 3rd
The one end for closing S3 is connected, one end phase of the common port of the 7th resistance R7 and the 8th resistance R8 and the described 4th switch S4
Even.
The other end of the first switch S1, the other end of the second switch S2, the other end of the 3rd switch S3
It is connected with the other end of the described 4th switch S4, output terminal of the common port as the band gap core circuit 102.
Wherein, the second NPN triode Q2, the 9th switching tube M9, the tenth switching tube M10, the described 5th
Resistance R5, the 6th resistance R6, the 7th resistance R7, the 8th resistance R8 and the 9th resistance R9 form negative-feedback
Loop；It is first NPN triode Q1, the 3rd resistor R3, the eight switching tubes M8, the 4th switching tube M4, described
6th switching tube M6, the second resistance R2, the 5th switching tube M5, the 7th switching tube M7, second NPN triode
Q2, the 9th switching tube M9, the tenth switching tube M10, the 5th resistance R5, the 6th resistance R6, the described 7th
Resistance R7, the 8th resistance R8 and the 9th resistance R9 form regenerative feedback loop；And the loop of the feedback loop increases
Benefit is more than the loop gain of the regenerative feedback loop.
Preferably, the 4th switching tube M4, the 5th switching tube M5, the 6th switching tube M6 and the described 7th are opened
It is PMOS tube to close pipe M7.
Preferably, the 8th switching tube M8, the 9th switching tube M9 and the tenth switching tube M10 are NMOS tube.
The operation principle of bandgap voltage reference provided by the invention without clamped amplifier：
When supply voltage VCC is just powered on, VBG starts fashion and does not set up, and first switch pipe M1 shut-offs, supply voltage rises
During to certain value, second switch pipe M2 conductings, the 4th switching tube M4 and the 6th switching tube M6 have electric current to flow through, when on VBG voltages
When being raised to the threshold voltage more than first switch pipe M1, first switch pipe M1 conductings, start-up circuit 101 is closed.Circuit departing from
1 degeneracy point, and enter eventually into a kind of working condition of stabilization.
The present invention bandgap voltage reference in, the second NPN triode Q2, the 9th switching tube M9, the tenth switching tube M10,
5th resistance R5, the 6th resistance R6, the 7th resistance R7, the 8th resistance R8 and the 9th resistance R9 form feedback loop, the first NPN
Triode Q1,3rd resistor R3, the 8th switching tube M8, the 4th switching tube M4, the 6th switching tube M6, second resistance R2, the 5th open
Close pipe M5, the 7th switching tube M7, the second NPN triode Q2, the 9th switching tube M9, the tenth switching tube M10, the 5th resistance R5, the
Six resistance R6, the 7th resistance R7, the 8th resistance R8 and the 9th resistance R9 form regenerative feedback loop, and the loop of feedback loop increases
Benefit is greater than the loop gain of regenerative feedback loop, it is ensured that entire loop is stable.
The effect of 8th switching tube M8 and the 9th switching tube M9 is for controlling the first NPN triode Q1 and the 2nd NPN tri-
The collector voltage of pole pipe Q2 is clamped equal, from the influence of mains voltage variations so that VBC_Q1=VBC_Q2, it is ensured that first
The difference of the base emitter voltage VBE of NPN triode Q1 and the second NPN triode Q2 are linear positive temperature coefficient.
Similarly, in order to inhibit influence of the supply voltage VCC variations to band-gap reference output voltage VBG precision, compared to existing
There is the band-gap reference in technology, bandgap voltage reference provided by the invention uses low pressure cascode structure, improves electric current
Mirror image precision, so as to improve the precision of VBG.
It is different to trim bit control first switch S1, the in the present invention in a manner that DAC (digital-to-analogue conversion) is trimmed
Some closure of two switch S2, the 3rd switch S3 and the 4th switch S4, select some corresponding resistor tap, and realization does not change
On the premise of VBG temperatures coefficient, the VBG deviations generated due to technological fluctuation are trimmed.
In addition, bandgap voltage reference provided by the invention does not introduce additional buffer amplifier, (buffering is put
Big device) circuit, greatly save the area of band-gap reference circuit.
Specifically, the breadth length ratio of the 4th switching tube M4 and the 5th switching tube M5 is 1:1, the 6th switching tube M6 and the 7th switch
The breadth length ratio of pipe M7 is 1:The breadth length ratio of 1, the 8th switching tube M8 and the 9th switching tube M9 are 1:1, the first NPN triode Q1 and
The emitter junction area ratio of two NPN triode Q2 is 1:8.
When trim be not enabled on when, the 3rd switch S3 be closed, then band-gap reference output voltage VBG isWherein, VBE_Q2 is the base voltage of the second NPN triode Q2, and VT is tri- poles of the 2nd NPN
The blanking voltage of pipe Q2.
Specifically, compare simulation results of the band-gap reference output VBG in Fig. 4 and Fig. 5 with mains voltage variations.Such as Fig. 4
Simulation results of the VBG with mains voltage variations is exported for the bandgap voltage reference in the prior art without clamped amplifier；Fig. 5 is this
The band-gap reference without clamped amplifier of invention exports simulation results of the VBG with mains voltage variations.As shown in figure 4, supply voltage
6V is changed to from 3V, VBG has changed 71mV；And shown in Fig. 5, supply voltage changes to 6V from 3V, and VBG has changed 3.2mV.
Therefore, the present invention compared with prior art in five clamped amplifiers bandgap voltage reference, have anti-well
Mains fluctuations performance, and be not required to increase buffer amplifier circuit and bandgap voltage reference is trimmed to realize, and not
Change the coefficient of stability, greatly save the area of circuit, therefore, bandgap voltage reference provided by the invention can extensive use
In the application scenario wider and higher to band-gap reference area requirements to the requirement of band-gap reference supply voltage working range.
In conclusion the invention discloses a kind of bandgap voltage reference without clamped amplifier, including：Start-up circuit and band
Gap core circuit, wherein：The input terminal of start-up circuit is connected with the output terminal of band gap core circuit, the output terminal of start-up circuit with
The input terminal of band gap core circuit is connected, and the output of band gap core circuit is reference voltage source, and start-up circuit is serially connected with power supply
Voltage and systematically between, band gap core circuit be serially connected with supply voltage and systematically between；Start-up circuit is used for as band gap core
Electrocardio road provides starting current；Band gap core circuit is used to generate band-gap reference supply voltage.The present invention compared with prior art in
Without clamped amplifier band-gap reference, there is good anti-mains fluctuations performance；And it is not required to increase buffer amplifier circuit
Bandgap voltage reference is trimmed to realize, and does not change temperature coefficient, has greatly saved the area of circuit, the present invention carries
The bandgap voltage reference of confession can be widely applied to wider and to band gap base to the requirement of band-gap reference supply voltage working range
The higher application scenario of quasi- area requirements.
It should be noted that herein, relational terms such as first and second and the like are used merely to a reality
Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation
In any this actual relation or order.Moreover, term " comprising ", "comprising" or its any other variant are intended to
Non-exclusive inclusion so that article or equipment including a series of elements not only include those elements, but also is wrapped
It includes other elements that are not explicitly listed or further includes as this article or the intrinsic element of equipment.Do not having more
In the case of more limitations, the element that is limited by sentence "including a ...", it is not excluded that in the article including above-mentioned element or
Also there are other identical elements in person's equipment.
The foregoing description of the disclosed embodiments enables professional and technical personnel in the field to realize or use the present invention.
A variety of modifications of these embodiments will be apparent for those skilled in the art, it is as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, it is of the invention
The embodiments shown herein is not intended to be limited to, and is to fit to and the principles and novel features disclosed herein phase one
The most wide scope caused.
Claims (7)
1. a kind of bandgap voltage reference without clamped amplifier, which is characterized in that including：Start-up circuit and band gap core circuit,
Wherein：
The input terminal of the start-up circuit is connected with the output terminal of the band gap core circuit, the output terminal of the start-up circuit with
The input terminal of the band gap core circuit is connected, and the output of the band gap core circuit is reference voltage source, described to start electricity
Road be serially connected with supply voltage and systematically between, the band gap core circuit be serially connected with the supply voltage and it is described systematically it
Between；
The start-up circuit is used to provide starting current for the band gap core circuit；
The band gap core circuit is used to generate band-gap reference supply voltage.
2. bandgap voltage reference according to claim 1, which is characterized in that the start-up circuit includes：First switch
Pipe, second switch pipe, the 3rd switching tube and first resistor, wherein：
Output terminal phase of the grid of the first switch pipe as the input terminal and the band gap core circuit of the start-up circuit
Even；
The source electrode of the first switch pipe is connected with the source electrode of the second switch pipe, common port and the one of the first resistor
End is connected, and the other end of the first resistor is connected with the supply voltage；
The grid of the second switch pipe is connected with source electrode, the output of the source electrode of the 3rd switching tube as the start-up circuit
End is connected with the input terminal of the band gap core circuit；
The draining of the first switch pipe, the drain electrode of the second switch pipe is connected with the drain electrode of the 3rd switching tube, and with
It is described to be systematically connected.
3. bandgap voltage reference according to claim 2, which is characterized in that the first switch pipe, described second open
3rd switching tube described in Guan Guanhe is NMOS tube.
4. bandgap voltage reference according to claim 1, which is characterized in that the band gap core circuit includes：4th
Switching tube, the 5th switching tube, the 6th switching tube, the 7th switching tube, the 8th switching tube, the 9th switching tube, the tenth switching tube, second
Resistance, 3rd resistor, the 4th resistance, the 5th resistance, the 6th resistance, the 7th resistance, the 8th resistance, the 9th resistance, first switch,
Second switch, the 3rd switch, the 4th switch, the first NPN triode and the second NPN triode, wherein：
The source electrode of the draining of 4th switching tube, the drain electrode of the 5th switching tube and the tenth switching tube and the power supply
Voltage is connected, and the grid of the 4th switching tube is connected with the grid of the 5th switching tube；
The source electrode of 4th switching tube is connected with the drain electrode of the described 6th switch, the grid of the 6th switching tube and described the
The grid of seven switching tubes is connected, and the source electrode of the 6th switching tube is connected with the grid of the 4th switching tube, and the described 5th opens
The source electrode of pass is connected with the drain electrode of the 7th switching tube；
The source electrode of 6th switching tube is connected with one end of the second resistance, the other end of the second resistance and described the
The grid of six switching tubes is connected, and the other end of the second resistance is connected with the source electrode of the 8th switching tube, and common port is made
Input terminal for the band gap core circuit is connected with the output terminal of the start-up circuit；
The drain electrode of 8th switching tube is connected with the collector of first NPN triode, the grid of the 8th switching tube
It is connected with the grid of the 9th switching tube, the grid of the 9th switching tube is connected with the source electrode of the 9th switching tube, institute
The source electrode for stating the 9th switching tube is connected with the source electrode of the 7th switching tube, the grid phase of common port and the tenth switching tube
Even；
The base stage of first NPN triode is connected with the base stage of second NPN triode, first NPN triode
Emitter is connected with one end of the 3rd resistor, the other end of the 3rd resistor and the transmitting of second NPN triode
Extremely it is connected, common port is connected with one end of the 4th resistance, the other end and the 9th resistance of the 4th resistance
One end is connected, and common port is systematically connected with described；
5th resistance, the 6th resistance, the 7th resistance, the 8th resistance and the 9th resistance connect successively
It connects, one end of the 5th resistance is connected with the drain electrode of the tenth switching tube, common port and one end of the first switch
It is connected；
The common port of 5th resistance and the 6th resistance is connected with the second switch, second NPN triode
Base stage is connected with the common port of the 6th resistance and the 7th resistance, and is connected with one end of the described 3rd switch, described
The common port of 7th resistance and the 8th resistance is connected with one end of the described 4th switch；
The other end of the first switch, the other end of the second switch, the other end and the described 4th of the 3rd switch
The other end of switch is connected, output terminal of the common port as the band gap core circuit.
5. bandgap voltage reference according to claim 4, which is characterized in that
Second NPN triode, the 9th switching tube, the tenth switching tube, the 5th resistance, the 6th electricity
Resistance, the 7th resistance, the 8th resistance and the 9th resistance form feedback loop；
First NPN triode, the 3rd resistor, eight switching tube, the 4th switching tube, the 6th switch
Pipe, the second resistance, the 5th switching tube, the 7th switching tube, second NPN triode, the 9th switching tube, institute
State the tenth switching tube, the 5th resistance, the 6th resistance, the 7th resistance, the 8th resistance and the 9th electricity
Resistance forms regenerative feedback loop；
The loop gain of the feedback loop is more than the loop gain of the regenerative feedback loop.
6. bandgap voltage reference according to claim 4, which is characterized in that the 4th switching tube, the described 5th open
Guan Guan, the 6th switching tube and the 7th switching tube are PMOS tube.
7. bandgap voltage reference according to claim 4, which is characterized in that the 8th switching tube, the described 9th open
Tenth switching tube described in Guan Guanhe is NMOS tube.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109314515A (en) * | 2018-09-03 | 2019-02-05 | 深圳市汇顶科技股份有限公司 | Data-interface, chip and chip system |
| CN112947667A (en) * | 2021-03-15 | 2021-06-11 | 清华大学 | Band-gap reference voltage source circuit |
| CN113885639A (en) * | 2021-09-28 | 2022-01-04 | 深圳市爱协生科技有限公司 | Reference circuit, integrated circuit, and electronic device |
| CN114415776A (en) * | 2020-10-28 | 2022-04-29 | 北京兆易创新科技股份有限公司 | Band-gap reference voltage source circuit and electronic device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101093401A (en) * | 2006-06-23 | 2007-12-26 | 联发科技股份有限公司 | Bandgap reference circuits |
| CN102200795A (en) * | 2010-03-25 | 2011-09-28 | 上海沙丘微电子有限公司 | High voltage band-gap reference and starting circuit |
| CN102354251A (en) * | 2011-08-24 | 2012-02-15 | 周继军 | Band-gap reference voltage circuit |
| CN105807829A (en) * | 2014-12-29 | 2016-07-27 | 上海贝岭股份有限公司 | Voltage reference generating circuit |
| CN106774616A (en) * | 2016-12-22 | 2017-05-31 | 四川纳杰微电子技术有限公司 | A kind of high-order temperature compensated Low Drift Temperature reference source circuit |
| CN107045370A (en) * | 2017-06-20 | 2017-08-15 | 上海灿瑞科技股份有限公司 | It is a kind of that there is high-order temperature compensated band gap reference voltage source circuit |
-
2017
- 2017-12-14 CN CN201711338442.7A patent/CN108052151B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101093401A (en) * | 2006-06-23 | 2007-12-26 | 联发科技股份有限公司 | Bandgap reference circuits |
| CN102200795A (en) * | 2010-03-25 | 2011-09-28 | 上海沙丘微电子有限公司 | High voltage band-gap reference and starting circuit |
| CN102354251A (en) * | 2011-08-24 | 2012-02-15 | 周继军 | Band-gap reference voltage circuit |
| CN105807829A (en) * | 2014-12-29 | 2016-07-27 | 上海贝岭股份有限公司 | Voltage reference generating circuit |
| CN106774616A (en) * | 2016-12-22 | 2017-05-31 | 四川纳杰微电子技术有限公司 | A kind of high-order temperature compensated Low Drift Temperature reference source circuit |
| CN107045370A (en) * | 2017-06-20 | 2017-08-15 | 上海灿瑞科技股份有限公司 | It is a kind of that there is high-order temperature compensated band gap reference voltage source circuit |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109314515A (en) * | 2018-09-03 | 2019-02-05 | 深圳市汇顶科技股份有限公司 | Data-interface, chip and chip system |
| CN114415776A (en) * | 2020-10-28 | 2022-04-29 | 北京兆易创新科技股份有限公司 | Band-gap reference voltage source circuit and electronic device |
| CN114415776B (en) * | 2020-10-28 | 2024-03-26 | 兆易创新科技集团股份有限公司 | Band gap reference voltage source circuit and electronic device |
| CN112947667A (en) * | 2021-03-15 | 2021-06-11 | 清华大学 | Band-gap reference voltage source circuit |
| CN113885639A (en) * | 2021-09-28 | 2022-01-04 | 深圳市爱协生科技有限公司 | Reference circuit, integrated circuit, and electronic device |
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