CN109388171B - Band gap reference voltage source and electronic equipment - Google Patents
Band gap reference voltage source and electronic equipment Download PDFInfo
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- CN109388171B CN109388171B CN201811502174.2A CN201811502174A CN109388171B CN 109388171 B CN109388171 B CN 109388171B CN 201811502174 A CN201811502174 A CN 201811502174A CN 109388171 B CN109388171 B CN 109388171B
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- 239000003990 capacitor Substances 0.000 claims description 34
- 230000005669 field effect Effects 0.000 claims description 18
- 239000004973 liquid crystal related substance Substances 0.000 claims description 12
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- 238000004806 packaging method and process Methods 0.000 description 4
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
Abstract
The application discloses band gap reference voltage source and electronic equipment, wherein, band gap reference voltage source comprises start-up module and band gap core module, band gap reference voltage source is when the loop compensation, if make band gap reference voltage source's inferior pole point equals zero, the required second capacitance value of stable condition reaches is less than the required compensation capacitance of band gap reference voltage source among the prior art far away from, can obtain band gap reference voltage source's that this application embodiment provided main pole point is greater than the main pole point of band gap reference voltage source among the prior art far away from, consequently band gap reference voltage source that this application embodiment provided can effectively improve the loop bandwidth, realize reducing band gap reference voltage source loop compensation difficulty, promote unit gain bandwidth and reduce required compensation capacitance's purpose.
Description
Technical Field
The present disclosure relates to the field of integrated circuits, and more particularly, to a bandgap reference voltage source and an electronic device.
Background
The reference voltage source is widely used as an indispensable basic module in integrated circuits in amplifiers, analog-to-digital converters, digital-to-analog converters, radio frequencies, sensors and power management chips. The reference voltage source comprises a voltage reference based on the reverse breakdown characteristic of the zener diode, a voltage reference based on the forward conduction characteristic of the PN junction, a band gap reference and other various implementation modes, wherein the band gap reference has the advantages of high precision, low temperature drift, high power supply rejection ratio and the like, and is widely applied.
The bandgap reference voltage source in the prior art can obtain the zero temperature coefficient bandgap reference voltage source by adjusting the parameters of the circuit. However, the output of such a bandgap reference voltage source is a high impedance node, so that the secondary point of the circuit is small, and therefore, if it is desired to compensate for this secondary point, a relatively large compensation capacitance is required. It can be seen that the secondary pole of this conventional bandgap reference voltage source structure is difficult to compensate loop at lower frequencies, and the unity Gain Bandwidth (GBW) is low, thus requiring a larger compensation capacitance area.
Disclosure of Invention
In order to solve the technical problems, the application provides a band gap reference voltage source and electronic equipment, so as to achieve the purposes of reducing the loop compensation difficulty of the band gap reference voltage source, improving the unit gain bandwidth and reducing the required compensation capacitance.
In order to achieve the technical purpose, the embodiment of the application provides the following technical scheme:
a bandgap reference voltage source comprising: a start module and a bandgap core module; wherein, the liquid crystal display device comprises a liquid crystal display device,
the starting module comprises a first transistor, a second transistor, a third transistor and a first resistor; the control electrode of the first transistor is used for receiving the output voltage of the band gap reference voltage source as bias voltage, and the output electrode of the first transistor is connected with the output electrode of the second transistor, the control electrode of the third transistor and one end of the first resistor; the input electrode of the first transistor is connected with the output electrode of the second transistor and the output electrode of the fourth transistor and is used as the grounding end of the starting module;
one end of the first resistor, which is far away from the first transistor, is used as an input end of the starting module, and an output electrode of the third transistor is used as an output end of the starting module;
the band gap core module comprises a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, an eighth transistor, an operational amplifier, a voltage dividing unit, a second resistor, a first capacitor and a second capacitor;
the input electrode of the fourth transistor is connected with the input electrode of the fifth transistor and the input end of the starting module and is used for receiving working voltage; the control electrode of the fourth transistor is connected with the control electrode of the fifth transistor, the output electrode of the sixth transistor and the output end of the starting module; the control electrode of the sixth transistor is connected with one end of the second resistor and the bias input end of the operational amplifier, the input electrode of the sixth transistor is connected with the input end of the voltage dividing unit and one end of the first capacitor, and the second capacitor is grounded at one end far away from the sixth transistor and is used as the output end of the band gap reference voltage source;
one end of the second resistor, which is far away from the operational amplifier, is connected with the second capacitor, and one end of the second capacitor, which is far away from the second resistor, is connected with the control electrode of the seventh transistor, the output electrode of the seventh transistor, the control electrode of the eighth transistor and the output electrode of the eighth transistor;
the first input end of the operational amplifier is connected with the first output end of the voltage division unit and the input electrode of the seventh transistor, and the second input end of the operational amplifier is connected with the second output end of the voltage division unit;
the third output terminal of the voltage dividing unit is connected with the input terminal of the eighth transistor.
Optionally, the first transistor, the second transistor, the third transistor, the fourth transistor, the fifth transistor and the sixth transistor are all field effect transistors;
the seventh transistor and the eighth transistor are all triodes.
Optionally, the control electrodes of the first transistor, the second transistor, the third transistor, the fourth transistor, the fifth transistor and the sixth transistor are gates;
the outputs of the first transistor, the second transistor, the third transistor, the fourth transistor, the fifth transistor and the sixth transistor are drain electrodes;
the inputs of the first transistor, the second transistor, the third transistor, the fourth transistor, the fifth transistor and the sixth transistor are sources;
the control electrodes of the seventh transistor and the eighth transistor are base electrodes;
the outputs of the seventh and eighth transistors are collectors;
the inputs of the seventh and eighth transistors are emitters.
Optionally, the first transistor, the second transistor, the third transistor and the sixth transistor are all first field effect transistors;
the fourth transistor and the fifth transistor are second type field effect transistors;
the seventh transistor and the eighth transistor are second type triodes.
Optionally, the first transistor, the second transistor, the third transistor and the sixth transistor are all N-type field effect transistors;
the fourth transistor and the fifth transistor are P-type field effect transistors;
the seventh transistor and the eighth transistor are P-type triodes.
Optionally, the voltage dividing unit includes: a third resistor, a fourth resistor, a fifth resistor, a sixth resistor and a seventh resistor; wherein, the liquid crystal display device comprises a liquid crystal display device,
the third resistor and the fourth resistor are connected in series, and one end, far away from the tenth resistor, of the third resistor is used as an input end of the voltage dividing unit;
one end, far away from the third resistor, of the fourth resistor is connected with one ends of the fifth resistor and the sixth resistor;
one end, far away from the fourth resistor, of the fifth resistor is used as a first output end of the voltage dividing unit;
one end, far away from the fourth resistor, of the sixth resistor is connected with one end of the seventh resistor and is used as a second output end of the voltage dividing unit;
one end of the seventh resistor, which is far away from the sixth resistor, is used as a third output end of the voltage dividing unit.
An electronic device comprising a bandgap reference voltage source as in any of the embodiments above.
As can be seen from the above technical solution, the embodiments of the present application provide a bandgap reference voltage source and an electronic device, where the bandgap reference voltage source is composed of a starting module and a bandgap core module, and in a working process, when a power supply voltage source of the bandgap reference voltage source starts to be powered on, an output voltage of the bandgap reference voltage source is not yet established in an initial stage of powering on, and a first transistor is turned off; when the output voltage of the band gap reference voltage source rises to be larger than the threshold voltage of the first transistor, the first transistor is turned on, the starting module is turned off, the output voltage of the band gap reference voltage source is separated from a zero degeneracy point, and the band gap reference voltage source enters a stable working state. The output end of the operational amplifier in the band-gap reference voltage source is connected with the control electrode of the sixth transistor serving as a source follower, and generates a first current, and the first current provides bias current for the operational amplifier after passing through the mirror images of the fourth transistor and the fifth transistor, so that a bias current generation circuit of the band-gap reference voltage source in the prior art is omitted.
And can be obtained by circuit theory of operation, when the loop compensation of band gap reference voltage source, if make the inferior pole point of band gap reference voltage source equal to the zero point, the required second capacitance value of reaching stable condition is less than the required compensation capacitance of band gap reference voltage source among the prior art far away from, can obtain the main pole point of band gap reference voltage source that this application embodiment provided far away from the main pole point of band gap reference voltage source among the prior art, therefore band gap reference voltage source that this application embodiment provided can effectively improve loop bandwidth, realize reducing band gap reference voltage source loop compensation difficulty, promote unit gain bandwidth and reduce required compensation capacitance's purpose.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present application, and that other drawings may be obtained according to the provided drawings without inventive effort to a person skilled in the art.
FIG. 1 is a schematic diagram of a prior art bandgap reference voltage source;
fig. 2 is a schematic circuit structure of a bandgap reference voltage source according to an embodiment of the present application.
Detailed Description
As described in the background art, the secondary pole position of the Band gap reference voltage source structure in the prior art is at a lower frequency, loop compensation is difficult, the unity Gain Bandwidth (GBW) is low, and the required compensation capacitance area is large. The specific reasons will be explained below.
Referring to fig. 1, fig. 1 is a schematic circuit diagram of a bandgap reference voltage source in the prior art, where the bandgap reference voltage source is composed of a first transistor M1, a second transistor M2, a third transistor M3, an operational amplifier OP, a first capacitor C1, a second capacitor C2, a fourth transistor Q1, a fifth transistor Q2, a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, and a fifth resistor R5, and the specific connection relation refers to fig. 1; the first transistor M1, the second transistor M2, and the third transistor M3 are field effect transistors, and the fourth transistor Q1 and the fifth transistor Q2 are transistors; the first transistor M1 and the second transistor M2 are P-type field effect transistors, and the third transistor M3 is an N-type field effect transistor; the fourth transistor Q1 and the fifth transistor Q2 are P-type triodes; GND in fig. 1 represents ground.
In the circuit configuration shown in fig. 1, a voltage of positive temperature coefficient is generated using a difference Δveb of emitter-base voltages VEB of the fourth transistor Q1 and the fifth transistor Q2, and a voltage of negative temperature coefficient is generated using the emitter-base voltage VEB of the fourth transistor Q1. The ratio of the emitter junction areas of the fourth transistor Q1 and the fifth transistor Q2 is 1:8, the width-to-length ratio of the first transistor M1 and the second transistor M2 is 1:1, and the resistance ratio of the second resistor R2 and the third resistor R3 is 1:1. The bandgap reference voltage VBG of the bandgap reference voltage source is expressed as:
wherein V is EB_Q1 Representing the fourth crystalVoltage V of negative temperature coefficient generated by voltage VEB of emitter-base of body tube Q1 T A voltage representing a positive temperature coefficient generated by a difference of emitter-base voltages VEB of the fourth transistor Q1 and the fifth transistor Q2; v (V) EB_Q1 The negative temperature coefficient of (C) is about-2 mV/DEG C, V T The positive temperature coefficient of the voltage source is about +0.085, and the band gap reference voltage source with zero temperature coefficient can be obtained by selecting proper resistance values of the first resistor R1, the second resistor R2, the third resistor R3 and the fourth resistor R4.
From loop stability analysis, the main pole point of the traditional band gap reference voltage source is at the output VOP end of the OP, the secondary pole point is at the output VBG end of the band gap reference, and the zero poles are distributed as follows:
wherein P is d1 Representing the main pole point, P, of a bandgap reference voltage source nd1 Represents the secondary pole point of the band-gap reference voltage source, z represents the zero point of the band-gap reference voltage source, R O,OP Representing the equivalent output impedance of the operational amplifier OP, R O,BG Represents the equivalent output impedance of the bandgap reference voltage source, C1 represents the capacitance value of the first capacitor C1, C2 represents the capacitance value of the second capacitor C2, R 5 The resistance value of the fifth resistor R5 is shown. To stabilize the loop AC characteristics, it is necessary to have a single pole characteristic in the bandwidth range of the unity Gain Bandwidth (GBW), so that a common compensation strategy is to make the zero equal to the secondary pole, thus changing the primary pole to P in the frequency range of the loop GBW d Is a single pole stabilization system.
In this configuration, however, the output of the bandgap reference voltage source is a high impedance node, i.eR O,BG Larger, such secondary pole P nd1 Smaller, a larger first capacitor C1 is required as the compensation capacitor to compensate the secondary pole. It can be seen that the secondary pole point of this conventional structure is at a lower frequency, loop compensation is difficult, GBW bandwidth is low, and the required compensation capacitance area is large.
In view of this, the embodiment of the present application provides a bandgap reference voltage source, which is formed by a start module and a bandgap core module, and in the working process, when a power supply voltage source of the bandgap reference voltage source starts to be powered on, an output voltage of the bandgap reference voltage source is not established at an initial stage of powering on, and the first transistor is turned off; when the output voltage of the band gap reference voltage source rises to be larger than the threshold voltage of the first transistor, the first transistor is turned on, the starting module is turned off, the output voltage of the band gap reference voltage source is separated from a zero degeneracy point, and the band gap reference voltage source enters a stable working state. The output end of the operational amplifier in the band-gap reference voltage source is connected with the control electrode of the sixth transistor serving as a source follower, and generates a first current, and the first current provides bias current for the operational amplifier after passing through the mirror images of the fourth transistor and the fifth transistor, so that a bias current generation circuit of the band-gap reference voltage source in the prior art is omitted.
And available from the circuit operating principle, in the bandgap reference voltage source provided in the embodiment of the present application, pole-zero distribution is as follows:
wherein P is d ＝P d2 Representing the beltMain pole point of gap reference voltage source, P nd ＝P nd2 Representing the secondary point, z, of a bandgap reference voltage source 1 Zero point representing band gap reference voltage source, R O,OP Representing the equivalent output impedance of the operational amplifier, R O,BG Representing the equivalent output impedance of the bandgap reference voltage source, C1 representing the capacitance of the first capacitor, C2 representing the capacitance of the second capacitor, R 2 A resistance value representing the second resistance; gm6 represents the equivalent transconductance of the sixth transistor, and gm6=r O,BG Thus, as can be derived from equation (5), the bandgap reference voltage source provided in the embodiments of the present application has a secondary point P d2 Far greater than the minor point P of the bandgap reference voltage source shown in fig. 1 d1 In the loop compensation, if the secondary pole point P of the band-gap reference voltage source is made d2 Equal to zero z 1 The second capacitance required for achieving the stable condition is far smaller than the compensation capacitance required by the band-gap reference voltage source in the prior art, so that the main pole point P of the band-gap reference voltage source provided by the embodiment of the application can be obtained d2 Far greater than the main pole point P of the band gap reference voltage source in the prior art d1 So that it is possible to:
GBW2＝P d2 ×A LOOP2 >GBW1＝P d1 ×A LOOP1 (7)
in the formula (7), A LOOP2 Represents the loop gain of the band-gap reference voltage source provided by the embodiment of the application, A LOOP1 The loop gain of the bandgap reference voltage source shown in fig. 1 is shown. As can be obtained from the formula (7), the band gap reference voltage source provided by the embodiment of the application can effectively improve the loop gain. The band gap reference voltage source provided by the embodiment of the application has good process fluctuation resistance. The circuit has the characteristics of high bandwidth, high power supply rejection ratio, self bias, good process fluctuation resistance and the like.
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Reference throughout this specification to "an embodiment" or similar language means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the present invention. Thus, appearances of the phrases "in one embodiment," "in an embodiment," and similar language throughout this specification may, but do not necessarily, all refer to the same embodiment.
The embodiment of the application provides a band gap reference voltage source, as shown in fig. 2, which comprises: a start-up module 10 and a bandgap core module 20; wherein, the liquid crystal display device comprises a liquid crystal display device,
the starting module 10 comprises a first transistor M1, a second transistor M2, a third transistor M3 and a first resistor R1; the control electrode of the first transistor M1 is configured to receive the output voltage of the bandgap reference voltage source as a bias voltage, and the output electrode of the first transistor M1 is connected to the output electrode of the second transistor M2, the control electrode of the third transistor M3, and one end of the first resistor R1; an input electrode of the first transistor M1 is connected to an output electrode of the second transistor M2 and an output electrode of a fourth per transistor, and is used as a ground terminal of the start module 10;
one end of the first resistor R1 away from the first transistor M1 is used as an input end of the start-up module 10, and the output electrode of the third transistor M3 is used as an output end of the start-up module 10;
the bandgap core module 20 includes a fourth transistor M4, a fifth transistor M5, a sixth transistor M6, a seventh transistor Q1, an eighth transistor Q2, an operational amplifier OP, a voltage dividing unit 21, a second resistor R2, a first capacitor C1, and a second capacitor C2;
an input terminal of the fourth transistor M4 is connected to an input terminal of the fifth transistor M5 and an input terminal of the start-up module 10, and is configured to receive an operating voltage; the control electrode of the fourth transistor M4 is connected to the control electrode of the fifth transistor M5, the output electrode of the sixth transistor M6, and the output terminal of the start module 10; a control electrode of the sixth transistor M6 is connected to one end of the second resistor R2 and a bias input end of the operational amplifier OP, an input electrode of the sixth transistor M6 is connected to an input end of the voltage dividing unit 21 and one end of the first capacitor C1, and the second capacitor C2 is far from one end of the sixth transistor M6 and grounded;
one end of the second resistor R2 far away from the operational amplifier OP is connected with the second capacitor C2, and one end of the second capacitor C2 far away from the second resistor R2 is connected with the control electrode of the seventh transistor Q1, the output electrode of the seventh transistor Q1, the control electrode of the eighth transistor Q2 and the output electrode of the eighth transistor Q2;
a first input end of the operational amplifier OP is connected with a first output end of the voltage dividing unit 21 and an input electrode of the seventh transistor Q1, and a second input end of the operational amplifier OP is connected with a second output end of the voltage dividing unit 21;
the third output terminal of the voltage dividing unit 21 is connected to the input terminal of the eighth transistor Q2.
In fig. 1, VBG represents the output voltage of the bandgap reference voltage source, GND represents ground, and VDD represents the operating voltage.
The band-gap reference voltage source is composed of a starting module 10 and a band-gap core module 20, and in the working process, when the power supply voltage source of the band-gap reference voltage source starts to be electrified, the output voltage of the band-gap reference voltage source is not established at the initial electrified stage, and the first transistor M1 is turned off; when the output voltage of the bandgap reference voltage source rises to be greater than the threshold voltage of the first transistor M1, the first transistor M1 is turned on, the start-up module 10 is turned off, and the output voltage of the bandgap reference voltage source is separated from the zero degeneracy point, so as to enter a stable working state. Since the output end of the operational amplifier OP in the bandgap reference voltage source is connected to the control electrode of the sixth transistor M6 serving as a source follower, and generates the first current, the first current provides the bias current for the operational amplifier OP after passing through the mirror images of the fourth transistor M4 and the fifth transistor M5, and the bias current generating circuit of the bandgap reference voltage source in the prior art is omitted.
And available from the circuit operating principle, in the bandgap reference voltage source provided in the embodiment of the present application, pole-zero distribution is as follows:
wherein P is d ＝P d2 Representing the main pole point, P, of the bandgap reference voltage source nd ＝P nd2 Representing the secondary point, z, of a bandgap reference voltage source 1 Zero point representing band gap reference voltage source, R O,OP Representing the equivalent output impedance of the operational amplifier OP, R O,BG Represents the equivalent output impedance of the bandgap reference voltage source, C1 represents the capacitance value of the first capacitor C1, C2 represents the capacitance value of the second capacitor C2, R 2 A resistance value representing the second resistance R2; gm6 represents the equivalent transconductance of the sixth transistor M6, and gm6=r O,BG Thus, as can be derived from equation (5), the bandgap reference voltage source provided in the embodiments of the present application has a secondary point P d2 Far greater than the minor point P of the bandgap reference voltage source shown in fig. 1 d1 In the loop compensation, if the secondary pole point P of the band-gap reference voltage source is made d2 Equal to zero z 1 The value of the second capacitor C2 required for achieving the stable condition is far smaller than the compensation capacitor required by the band-gap reference voltage source in the prior art, so that the main pole point P of the band-gap reference voltage source provided by the embodiment of the application can be obtained d2 Far greater than the main pole point P of the band gap reference voltage source in the prior art d1 So that it is possible to:
GBW2＝P d2 ×A LOOP2 >GBW1＝P d1 ×A LOOP1 (7)
in the formula (7), A LOOP2 Represents the loop gain of the band-gap reference voltage source provided by the embodiment of the application, A LOOP1 The loop gain of the bandgap reference voltage source shown in fig. 1 is shown. As can be obtained from the formula (7), the band gap reference voltage source provided by the embodiment of the application can effectively improve the loop gain. The band gap reference voltage source provided by the embodiment of the application has good process fluctuation resistance. The circuit has the characteristics of high bandwidth, high power supply rejection ratio, self bias, good process fluctuation resistance and the like.
Alternatively, still referring to fig. 2, the first transistor M1, the second transistor M2, the third transistor M3, the fourth transistor M4, the fifth transistor M5 and the sixth transistor M6 are all field effect transistors;
the seventh transistor Q1 and the eighth transistor Q2 are transistors.
Accordingly, the control electrodes of the first transistor M1, the second transistor M2, the third transistor M3, the fourth transistor M4, the fifth transistor M5 and the sixth transistor M6 are gates;
the output poles of the first transistor M1, the second transistor M2, the third transistor M3, the fourth transistor M4, the fifth transistor M5 and the sixth transistor M6 are drain electrodes;
the inputs of the first, second, third, fourth, fifth and sixth transistors M1, M2, M3, M4, M5, M6 are sources;
the control electrodes of the seventh transistor Q1 and the eighth transistor Q2 are base electrodes;
the output poles of the seventh transistor Q1 and the eighth transistor Q2 are collectors;
the inputs of the seventh and eighth transistors Q1 and Q2 are emitters.
On the basis of the above embodiments, in another embodiment of the present application, the first transistor M1, the second transistor M2, the third transistor M3, and the sixth transistor M6 are all first field effect transistors;
the fourth transistor M4 and the fifth transistor M5 are both second field effect transistors;
the seventh transistor Q1 and the eighth transistor Q2 are both second type transistors.
Optionally, the first transistor M1, the second transistor M2, the third transistor M3 and the sixth transistor M6 are all N-type field effect transistors;
the fourth transistor M4 and the fifth transistor M5 are P-type field effect transistors;
the seventh transistor Q1 and the eighth transistor Q2 are P-type transistors.
On the basis of the above-described embodiment, in still another embodiment of the present application, referring to fig. 2, the voltage dividing unit 21 includes: a third resistor R3, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6, and a seventh resistor; wherein, the liquid crystal display device comprises a liquid crystal display device,
the third resistor R3 and the fourth resistor R4 are connected in series, and one end of the third resistor R3 far away from the tenth resistor is used as an input end of the voltage dividing unit 21;
one end, far away from the third resistor R3, of the fourth resistor R4 is connected with one ends of the fifth resistor R5 and the sixth resistor R6;
one end of the fifth resistor R5 far from the fourth resistor R4 is used as a first output end of the voltage dividing unit 21;
one end of the sixth resistor R6 far from the fourth resistor R4 is connected with one end of the seventh resistor, and is used as a second output end of the voltage dividing unit 21;
one end of the seventh resistor far from the sixth resistor R6 is used as a third output end of the voltage dividing unit 21.
Correspondingly, the embodiment of the application also provides electronic equipment, which comprises the band gap reference voltage source according to any embodiment.
In summary, the embodiment of the present application provides a bandgap reference voltage source and an electronic device, where the bandgap reference voltage source is composed of a starting module 10 and a bandgap core module 20, and in a working process, when a power supply voltage source of the bandgap reference voltage source starts to be powered on, an output voltage of the bandgap reference voltage source is not yet established at an initial stage of powering on, and the first transistor M1 is turned off; when the output voltage of the bandgap reference voltage source rises to be greater than the threshold voltage of the first transistor M1, the first transistor M1 is turned on, the start-up module 10 is turned off, and the output voltage of the bandgap reference voltage source is separated from the zero degeneracy point, so as to enter a stable working state. Since the output end of the operational amplifier OP in the bandgap reference voltage source is connected to the control electrode of the sixth transistor M6 serving as a source follower, and generates the first current, the first current provides the bias current for the operational amplifier OP after passing through the mirror images of the fourth transistor M4 and the fifth transistor M5, and the bias current generating circuit of the bandgap reference voltage source in the prior art is omitted.
And available from the circuit operating principle, in the bandgap reference voltage source provided in the embodiment of the present application, pole-zero distribution is as follows:
wherein P is d ＝P d2 Representing the main pole point, P, of the bandgap reference voltage source nd ＝P nd2 Representing the secondary point, z, of a bandgap reference voltage source 1 Zero point representing band gap reference voltage source, R O,OP Representing the equivalent output impedance of the operational amplifier OP, R O,BG Represents the equivalent output impedance of the bandgap reference voltage source, C1 represents the capacitance value of the first capacitor C1, C2 represents the capacitance value of the second capacitor C2, R 2 A resistance value representing the second resistance R2; gm6 represents the equivalent transconductance of the sixth transistor M6, and gm6=r O,BG Thus, as can be derived from equation (5), the bandgap reference voltage source provided in the embodiments of the present application has a secondary point P d2 Far greater than the minor point P of the bandgap reference voltage source shown in fig. 1 d1 In loop compensation, ifThe secondary pole point P of the band gap reference voltage source d2 Equal to zero z 1 The value of the second capacitor C2 required for achieving the stable condition is far smaller than the compensation capacitor required by the band-gap reference voltage source in the prior art, so that the main pole point P of the band-gap reference voltage source provided by the embodiment of the application can be obtained d2 Far greater than the main pole point P of the band gap reference voltage source in the prior art d1 So that it is possible to:
GBW2＝P d2 ×A LOOP2 >GBW1＝P d1 ×A LOOP1 (7)
in the formula (7), A LOOP2 Represents the loop gain of the band-gap reference voltage source provided by the embodiment of the application, A LOOP1 The loop gain of the bandgap reference voltage source shown in fig. 1 is shown. As can be obtained from the formula (7), the band gap reference voltage source provided by the embodiment of the application can effectively improve the loop gain. The band gap reference voltage source provided by the embodiment of the application has good process fluctuation resistance. The circuit has the characteristics of high bandwidth, high power supply rejection ratio, self bias, good process fluctuation resistance and the like.
It should be noted that, in the present description, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different manner from other embodiments, and identical and similar parts between the embodiments are mutually referred to. For the packaging method disclosed by the embodiment, the description is simpler because the packaging method corresponds to the packaging structure disclosed by the embodiment, and the relevant parts refer to the corresponding parts of the packaging structure.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (6)
1. A bandgap reference voltage source comprising: a start module and a bandgap core module; wherein, the liquid crystal display device comprises a liquid crystal display device,
the starting module comprises a first transistor, a second transistor, a third transistor and a first resistor; the control electrode of the first transistor is used for receiving the output voltage of the band gap reference voltage source as bias voltage, and the output electrode of the first transistor is connected with the output electrode of the second transistor, the control electrode of the third transistor and one end of the first resistor; the input electrode of the first transistor is connected with the output electrode of the second transistor and the output electrode of the fourth transistor and is used as the grounding end of the starting module;
one end of the first resistor, which is far away from the first transistor, is used as an input end of the starting module, and an output electrode of the third transistor is used as an output end of the starting module;
the band gap core module comprises a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, an eighth transistor, an operational amplifier, a voltage dividing unit, a second resistor, a first capacitor and a second capacitor;
the input electrode of the fourth transistor is connected with the input electrode of the fifth transistor and the input end of the starting module and is used for receiving working voltage; the control electrode of the fourth transistor is connected with the control electrode of the fifth transistor, the output electrode of the sixth transistor and the output end of the starting module; the control electrode of the sixth transistor is connected with one end of the second resistor and the bias input end of the operational amplifier, the input electrode of the sixth transistor is connected with the input end of the voltage dividing unit and one end of the first capacitor, and the second capacitor is grounded at one end far away from the sixth transistor and is used as the output end of the band gap reference voltage source;
one end of the second resistor, which is far away from the operational amplifier, is connected with the second capacitor, and one end of the second capacitor, which is far away from the second resistor, is connected with the control electrode of the seventh transistor, the output electrode of the seventh transistor, the control electrode of the eighth transistor and the output electrode of the eighth transistor;
the first input end of the operational amplifier is connected with the first output end of the voltage division unit and the input electrode of the seventh transistor, and the second input end of the operational amplifier is connected with the second output end of the voltage division unit;
the third output end of the voltage division unit is connected with the input electrode of the eighth transistor;
the voltage dividing unit includes: a third resistor, a fourth resistor, a fifth resistor, a sixth resistor and a seventh resistor; wherein, the liquid crystal display device comprises a liquid crystal display device,
the third resistor and the fourth resistor are connected in series, and one end, far away from the tenth resistor, of the third resistor is used as an input end of the voltage dividing unit;
one end, far away from the third resistor, of the fourth resistor is connected with one ends of the fifth resistor and the sixth resistor;
one end, far away from the fourth resistor, of the fifth resistor is used as a first output end of the voltage dividing unit;
one end, far away from the fourth resistor, of the sixth resistor is connected with one end of the seventh resistor and is used as a second output end of the voltage dividing unit;
one end of the seventh resistor, which is far away from the sixth resistor, is used as a third output end of the voltage dividing unit.
2. The bandgap reference voltage source according to claim 1, wherein said first, second, third, fourth, fifth and sixth transistors are field effect transistors;
the seventh transistor and the eighth transistor are all triodes.
3. The bandgap reference voltage source according to claim 2, wherein the control electrodes of said first, second, third, fourth, fifth and sixth transistors are gates;
the outputs of the first transistor, the second transistor, the third transistor, the fourth transistor, the fifth transistor and the sixth transistor are drain electrodes;
the inputs of the first transistor, the second transistor, the third transistor, the fourth transistor, the fifth transistor and the sixth transistor are sources;
the control electrodes of the seventh transistor and the eighth transistor are base electrodes;
the outputs of the seventh and eighth transistors are collectors;
the inputs of the seventh and eighth transistors are emitters.
4. The bandgap reference voltage source according to claim 2, wherein said first, second, third and sixth transistors are all first field effect transistors;
the fourth transistor and the fifth transistor are second type field effect transistors;
the seventh transistor and the eighth transistor are second type triodes.
5. The bandgap reference voltage source according to claim 4, wherein said first, second, third and sixth transistors are all N-type field effect transistors;
the fourth transistor and the fifth transistor are P-type field effect transistors;
the seventh transistor and the eighth transistor are P-type triodes.
6. An electronic device comprising a bandgap reference voltage source as claimed in any of claims 1-5.
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| CN112835404B (en) * | 2020-12-31 | 2022-07-19 | 上海艾为电子技术股份有限公司 | Band gap reference circuit and electronic equipment |
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