CN103729010B - High-precision band-gap reference source circuit - Google Patents
High-precision band-gap reference source circuit Download PDFInfo
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- CN103729010B CN103729010B CN201210391174.6A CN201210391174A CN103729010B CN 103729010 B CN103729010 B CN 103729010B CN 201210391174 A CN201210391174 A CN 201210391174A CN 103729010 B CN103729010 B CN 103729010B
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- gap reference
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Abstract
The invention provides a high-precision band-gap reference source circuit. The circuit at least comprises a PTAT current source, an IPTAT current source, a first-order compensating circuit, a low-temperature compensating circuit, a high-temperature compensating circuit and an output circuit, wherein the first-order compensating circuit is used for linearly superposing currents output by the PTAT current source and currents output by the IPTAT current source; the low-temperature compensating circuit is used for conducting linear subtraction on the currents output by the PTAT current source and the currents output by the IPTAT current source when the working temperature is lower than a preset low temperature threshold value; the high-temperature compensating circuit is used for conducting linear subtraction on the currents output by the PTAT current source and the currents output by the IPTAT current source when the working temperature is higher than a preset high temperature threshold value; the output circuit is used for outputting reference voltages based on the currents output by the first-order compensating circuit, the low-temperature compensating circuit and the high-temperature compensating circuit. Preferably, the circuit further comprises a premodulation voltage source for power supply. The high-precision band-gap reference source circuit has the advantages of being capable of achieving the ultra-low temperature drift performance of a reference source and effectively suppressing noise in power supplies.
Description
Technical field
The present invention relates to circuit field, particularly relate to a kind of high-precision band-gap reference source circuit.
Background technology
Voltage reference circuit is the total indispensable basic modules of circuit such as digital to analog converter (DAC), analog-digital converter (ADC), linear voltage regulator (LDO).Traditional band-gap reference circuit adopts the bipolar transistor tube voltage V of negative temperature coefficient
bEwith positive temperature coefficient voltage V
tthe mode be added reduces the temperature coefficient of output voltage.
Such as, as shown in Figure 1, it is the band-gap reference source circuit under existing CMOS standard technology.The PTAT electric current that MP2 produces is mirrored onto MP1 and MP3, by regulating the resistance value of R1 and R2, just obtains the band gap reference under first compensation phase.But because pnp transistor nonlinear component inherently (varying with temperature) limits the precision of a reference source to a great extent.Usually when first compensation phase, the emulation drift value of reference voltage is about 2-3mv(-40 ° to 125 ° change), but measured result is often far so not desirable, and the magnitude of voltage of drift is easy to reach tens millivolts, is thus difficult to be applicable in high-precision simulation system.
And the reference voltage that above-mentioned band-gap reference circuit obtains only compensates for single order temperature T, V
bEintrinsic high-order temperature lnT becomes the key factor that restriction improves base voltage temperature characterisitic.Although existing researcher proposes some high-order temperature compensated technology in recent years, such as, Leung etc. put forward to utilize the high-order temperature characterisitic of resistance to carry out the scheme of temperature-compensating, make reference voltage the temperature range of 0-100 DEG C, temperature coefficient is down to 3.3ppm/ DEG C, but the method exists resistance mismatch problem in actual process makes; Again such as, Malcovati etc. propose and utilize the voltage difference of bipolar transistor to form high-order temperature current to carry out temperature-compensating, and make reference voltage the temperature range of 0-80 DEG C, temperature coefficient reaches 7.53ppm/ DEG C, but the method has resistance loop in circuit, have impact on the precision of reference voltage.
In addition, as a desirable a reference source, PSRR (PSRR) performance is also often a very important technical indicator.Basic reference source, as shown in Figure 1, the noise in voltage source is directly coupled to output with AC signal form by MP3, thus makes reference voltage be subject to the impact of power source change larger.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of high-precision band-gap reference source circuit.
For achieving the above object and other relevant objects, the invention provides a kind of high-precision band-gap reference source circuit, it at least comprises:
PTAT current source and IPTAT current source;
First compensation phase circuit, for the electric current linear superposition electric current of described PTAT current source output and IPTAT current source exported;
Low temperature compensation circuit, linearly subtracts each other for the electric current exported lower than the electric current exported by IPTAT current source during predetermined low temperature level threshold value and PTAT current source in operating temperature;
High temperature compensation circuit, linearly subtracts each other for the electric current exported higher than the electric current exported by PTAT current source during predetermined high temperature threshold value and IPTAT current source in operating temperature;
Output circuit, for carrying out output reference voltage based on the output current of described first compensation phase circuit, low temperature compensation circuit and high temperature compensation circuit.
Preferably, described high-precision band-gap reference source circuit also comprises the premodulated voltage source for powering; More preferably, described premodulated voltage source comprises: bootstrap reference source and comprise the voltage conversion circuit of operational amplifier.
Preferably, described predetermined low temperature level threshold value is determined based on becoming the IPTAT current source of the current source of mirror image and the ratio of PTAT current source respectively with described IPTAT current source and PTAT current source.
Preferably, described predetermined high temperature threshold value is determined based on becoming the IPTAT current source of the current source of mirror image and the ratio of PTAT current source respectively with described IPTAT current source and PTAT current source.
Preferably, described PTAT current source and IPTAT current source are realized by the negative-feedback circuit comprising two operational amplifiers, two PNP transistors and resistance.
As mentioned above, high-precision band-gap reference source circuit of the present invention, has following beneficial effect: the ultra-low temperature drift performance realizing a reference source; Effectively can suppress the noise etc. in power supply.
Accompanying drawing explanation
Fig. 1 is shown as band-gap reference source circuit schematic diagram of the prior art.
Fig. 2 is shown as high-precision band-gap reference source circuit schematic diagram of the present invention.
Fig. 3 is shown as the high gain operational amplifier internal circuit schematic diagram in high-precision band-gap reference source circuit of the present invention.
Fig. 4 is shown as the premodulated voltage source schematic diagram of high-precision band-gap reference source circuit of the present invention.
Detailed description of the invention
By particular specific embodiment, embodiments of the present invention are described below, person skilled in the art scholar the content disclosed by this description can understand other advantages of the present invention and effect easily.
Refer to Fig. 1 to Fig. 4.Notice, structure, ratio, size etc. that this description institute accompanying drawings illustrates, content all only in order to coordinate description to disclose, understand for person skilled in the art scholar and read, and be not used to limit the enforceable qualifications of the present invention, therefore the not technical essential meaning of tool, the adjustment of the modification of any structure, the change of proportionate relationship or size, do not affecting under effect that the present invention can produce and the object that can reach, still all should drop on disclosed technology contents and obtain in the scope that can contain.Simultaneously, quote in this description as " on ", D score, "left", "right", " centre " and " one " etc. term, also only for ease of understanding of describing, and be not used to limit the enforceable scope of the present invention, the change of its relativeness or adjustment, under changing technology contents without essence, when being also considered as the enforceable category of the present invention.
Fig. 2 is the preferred circuit figure of high-precision band-gap reference source circuit provided by the invention.Wherein, this high-precision band-gap reference source circuit comprises: PTAT current source and IPTAT current source, first compensation phase circuit, low temperature compensation circuit, high temperature compensation circuit and output circuit.
Described PTAT current source and IPTAT current source comprise: amplifier opamp1, opamp2, FET MP1, MP2, MP3, resistance R1, R2, PNP transistor Q1, Q2 and electric capacity Cm1.
Described first compensation phase circuit comprises FET MP11, MP12, resistance R3 and electric capacity Cm2.
Described low temperature compensation circuit comprises: FET MP4, MP5, MN1, MN2, MP7, MP8.
Described output circuit comprises: resistance R4.
Described high temperature compensation circuit comprises: FET MP4, MP6, MN1, MN3, MN4, MN5, MP9, MP10.
The annexation of above-mentioned each device and proportionate relationship as shown in Figure 2, are not described in detail in this.
In this high-precision band-gap reference source circuit, amplifier opamp1, opamp2 force the current potential of some A, B, C equal by respective negative-feedback path, the IPTAT electric current thus on resistance R2
pTAT electric current on resistance R1
obtain single compensation effect after this PTAT electric current and IPTAT current mirror to FET MP11, MP12, by simply debugging R1, the ratio value of R2, can obtain symmetrical parabola wave shape.When the working environment of this circuit place chip is lower than predetermined low temperature level threshold value, then I
mN2>I
mP5, then low temp compensating electric current c (I
mN2-I
mP5) realize reference voltage V
refsecond time compensate, by adjustment factor α
1, α
2, β
1the cut-off temperature spot (i.e. predetermined low temperature level threshold value) of low temp compensating electric current can be controlled; When the operating ambient temperature of chip is higher than predetermined high temperature threshold value, then I
mP6>I
mN3, then high temperature compensation current component d(I
mP6-I
mN3) to reference voltage V
refcarry out third time compensation, by regulating proportionality coefficient α
1, α
3, β
2control the initial temperature point (i.e. predetermined high temperature threshold value) of high temperature compensation current component.
In order to reach better matching effect, resistance R1-R4 is formed by the unit square resistance connection in series-parallel of circuit place chip, and conversion that matching precision requires and area can be compromised mutually, can realize the error effects less than 0.1%; In addition, based on the consideration being improved matching degree by Central Symmetry, the area ratio of two PNP pipe Q1, Q2 is 1:8.
Because the PTAT electric current in the present invention and IPTAT electric current are by two of amplifier independently feedback loops and obtaining, therefore stability must not be again irrespective problem.With opamp2, MP1, R2 is example, with common dual-stage amplifier form distinguish be, the source electrode of MP1 also exists the equivalent load changed with change of frequency, and this equivalent load not only weakens the equivalent transconductance of MP1, and substantially increases the output resistance of a point, therefore miller capacitance is just limited to use in this case, and the present invention adopts and dominant pole is obtained ideal phase margin toward the way that low frequency place pushes away.
Such as, as shown in Figure 3, its high gain operational amplifier structure adopted for the present invention, this structure have employed gain boosting technique, makes output resistance reach tens megaohms.Also the accuracy value of reference voltage is substantially increased while dominant pole is pushed away toward low frequency place.
Preferred as one, aforementioned high-precision band-gap reference source circuit also comprises for providing power supply V to whole circuit
nivspremodulated voltage source.
Such as, as shown in Figure 4, it is a kind of preferred premodulated voltage source circuit figure.
FET M1-M3 is with minimum quiescent dissipation for cost, and the bootstrap reference source that FET M4-M7 and resistance R0 is formed departs from its potential degeneracy bias point.The negative voltage feedback that FET M6 and resistance R0 is formed improves PSRR (PSRR) performance of FET M7 grid end.Transconductance type amplifier (OTA), FET MPW and resistance Rf1-Rf2 define a simple dc-dc, the output voltage V after transforming
nivsfor band-gap reference source circuit is powered, required magnitude of voltage can be obtained by regulating the ratio of Rf1 and Rf2.
In sum, the premodulated voltage source of high-precision band-gap reference source circuit of the present invention is that whole circuit provides one not by the reference voltage of ideal voltage source change, the noise in power supply can be suppressed well, and the present invention reasonably regulates and controls by high-order compensation technology the ultra-low temperature drift performance that PTAT and IPTAT current component realizes a reference source Vref and reasonably regulates and controls by high-order compensation technology the ultra-low temperature drift performance that PTAT and IPTAT current component realizes a reference source Vref, can be used for the system higher to reference source requirement, as: high-precision A/D, D/A converter, PLL, LDO etc.So the present invention effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (8)
1. a high-precision band-gap reference source circuit, is characterized in that, described high-precision band-gap reference source circuit at least comprises:
PTAT current source and IPTAT current source;
First compensation phase circuit, for the electric current linear superposition electric current of described PTAT current source output and IPTAT current source exported;
Low temperature compensation circuit, linearly subtracts each other for the electric current exported lower than the electric current exported by IPTAT current source during predetermined low temperature level threshold value and PTAT current source in operating temperature;
High temperature compensation circuit, linearly subtracts each other for the electric current exported higher than the electric current exported by PTAT current source during predetermined high temperature threshold value and IPTAT current source in operating temperature;
Output circuit, for carrying out output reference voltage based on the output current of described first compensation phase circuit, low temperature compensation circuit and high temperature compensation circuit.
2. high-precision band-gap reference source circuit according to claim 1, characterized by further comprising the premodulated voltage source for powering.
3. high-precision band-gap reference source circuit according to claim 2, is characterized in that: described premodulated voltage source comprises: bootstrap reference source and comprise the voltage conversion circuit of operational amplifier.
4. high-precision band-gap reference source circuit according to claim 1, is characterized in that: described predetermined low temperature level threshold value is determined based on becoming the IPTAT current source of the current source of mirror image and the ratio of PTAT current source respectively with described IPTAT current source and PTAT current source.
5. high-precision band-gap reference source circuit according to claim 1, is characterized in that: described predetermined high temperature threshold value is determined based on becoming the IPTAT current source of the current source of mirror image and the ratio of PTAT current source respectively with described IPTAT current source and PTAT current source.
6. high-precision band-gap reference source circuit according to claim 1, is characterized in that: described PTAT current source and IPTAT current source are realized by the negative-feedback circuit comprising two operational amplifiers, two PNP transistors and resistance.
7. high-precision band-gap reference source circuit according to claim 6, is characterized in that: described resistance by circuit place chip square resistance string and formed.
8. high-precision band-gap reference source circuit according to claim 1, is characterized in that: the resistance that described output circuit comprises by circuit place chip square resistance string and formed.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210391174.6A CN103729010B (en) | 2012-10-15 | 2012-10-15 | High-precision band-gap reference source circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210391174.6A CN103729010B (en) | 2012-10-15 | 2012-10-15 | High-precision band-gap reference source circuit |
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| CN103729010A CN103729010A (en) | 2014-04-16 |
| CN103729010B true CN103729010B (en) | 2015-04-29 |
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Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104166423B (en) * | 2014-08-27 | 2016-02-03 | 电子科技大学 | A kind of reference source with compensation in full temperature range characteristic |
| CN104199503B (en) * | 2014-09-06 | 2016-09-21 | 辛晓宁 | A kind of temperature-compensation circuit |
| CN104460810B (en) * | 2014-12-25 | 2016-04-06 | 武汉众为信息技术有限公司 | A kind of can the voltage reference circuit of fixed temperature coefficient |
| CN107728690B (en) * | 2016-08-10 | 2020-02-28 | 晶豪科技股份有限公司 | Energy gap reference circuit |
| CN107066009A (en) * | 2017-05-27 | 2017-08-18 | 西安启达电子科技有限公司 | A kind of low noise bandgap references source and the method for reduction band gap reference output noise |
| CN110274703A (en) * | 2019-07-12 | 2019-09-24 | 广州芯世物科技有限公司 | A kind of the CMOS temperature-sensitive circuit and temperature sensor of high sensitivity |
| CN112034921B (en) * | 2020-09-02 | 2022-05-03 | 重庆邮电大学 | High-order band-gap reference circuit based on transconductance linear loop technology |
| TWI760023B (en) * | 2020-12-22 | 2022-04-01 | 新唐科技股份有限公司 | Reference voltage circuit |
| CN112865800B (en) * | 2020-12-31 | 2024-04-02 | 瑞声科技（南京）有限公司 | Sigma-delta ADC modulator for optimizing OTA and electronic equipment |
| CN113885641B (en) * | 2021-10-26 | 2022-09-13 | 西安微电子技术研究所 | High-low temperature compensation circuit for band gap reference source |
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| US7248098B1 (en) * | 2004-03-24 | 2007-07-24 | National Semiconductor Corporation | Curvature corrected bandgap circuit |
| CN102122191A (en) * | 2011-01-14 | 2011-07-13 | 钜泉光电科技(上海)股份有限公司 | Current reference source circuit and method for generating current reference source |
| CN102591398A (en) * | 2012-03-09 | 2012-07-18 | 钜泉光电科技(上海)股份有限公司 | Multi-output bandgap reference circuit with function of nonlinear temperature compensation |
| CN102622032A (en) * | 2012-04-17 | 2012-08-01 | 钜泉光电科技(上海)股份有限公司 | Low temperature coefficient bandgap voltage reference circuit |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US7705662B2 (en) * | 2008-09-25 | 2010-04-27 | Hong Kong Applied Science And Technology Research Institute Co., Ltd | Low voltage high-output-driving CMOS voltage reference with temperature compensation |
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Patent Citations (4)
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|---|---|---|---|---|
| US7248098B1 (en) * | 2004-03-24 | 2007-07-24 | National Semiconductor Corporation | Curvature corrected bandgap circuit |
| CN102122191A (en) * | 2011-01-14 | 2011-07-13 | 钜泉光电科技(上海)股份有限公司 | Current reference source circuit and method for generating current reference source |
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| CN103729010A (en) | 2014-04-16 |
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