CN104460805A - Reference current source with low temperature coefficient and low power supply voltage coefficient - Google Patents
Reference current source with low temperature coefficient and low power supply voltage coefficient Download PDFInfo
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- CN104460805A CN104460805A CN201410787578.6A CN201410787578A CN104460805A CN 104460805 A CN104460805 A CN 104460805A CN 201410787578 A CN201410787578 A CN 201410787578A CN 104460805 A CN104460805 A CN 104460805A
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Abstract
The invention discloses a reference current source with a low temperature coefficient and a low power supply voltage coefficient. The reference current source comprises a band gap reference circuit and a current source generation circuit; the output terminal IPTAT of the band gap reference circuit is connected to the current source generation circuit electrically; the current source generation circuit is used for generating a second current used to generate a negative temperature coefficient, the second current is stacked with a first cutting output by the output terminal IPTAT of the band gap reference circuit, and the wights of the two currents are adjusted by adjusting the current mirror ratio to output reference current through the output terminal Iout of the current source generation circuit. The reference current source has the advantages that structure is simple, the IPTAT current serves as the bias current, a folded cascode amplifier is adopted, the influence on the current by power supply voltage can be reduced, and the reference current with the low temperature coefficient and the low power supply voltage coefficient can be acquired.
Description
Technical field
The invention belongs to technical field of integrated circuits, relate to the reference current source of a kind of low-temperature coefficient and low supply voltage coefficient.
Background technology
Along with the requirement that the progress of semiconductor technology and electronic market are more and more harsher, for ADC, LDO, the accuracy requirement of Switching Power Supply and temperature sensor is more and more higher.And their precision all depends on the precision of reference current source, because reference current source is for they provide bias current.
Publication No. be CN103472877Aa patent document discloses a kind of High-accuracy reference current source, it comprises the first current generating circuit, the second current generating circuit and reference current output circuit, described first current generating circuit is connected with reference current output circuit respectively with the second current generating circuit, described second electric current produces PTAT current source, and the output terminal of described reference current output circuit exports.Although the prior art can improve precision to a certain extent, significantly shortcoming is: current source circuit complex structure, and power consumption is large, and chip cost is increased.
Summary of the invention
The object of the invention is to overcome above-mentioned deficiency, the reference current source of a kind of low-temperature coefficient and low supply voltage coefficient is provided, while guarantee precision, realize the requirement reduced costs.
To achieve these goals, the technical solution used in the present invention is:
A reference current source for low-temperature coefficient and low supply voltage coefficient, is characterized in that, comprising: band-gap reference circuit and electric current source generating circuit, the output port I of described band-gap reference circuit
pTATbe electrically connected described electric current source generating circuit;
Described electric current source generating circuit for generation of the second electric current of a negative temperature coefficient, and with the output port I of described band-gap reference circuit
pTATthe first electric current exported superposes, by the weight regulating current mirror ratio to regulate two electric currents, with the output port I at described electric current source generating circuit
outoutput reference electric current.
Beneficial effect of the present invention is:
Structure is simple, and current source comprises band-gap reference circuit and electric current source generating circuit, the output port I of band-gap reference circuit
pTATbe electrically connected described electric current source generating circuit, utilize I
pTATelectric current as bias current, and adopts Folded-cascode amplifier, can reduce the impact of supply voltage on electric current, thus obtains the reference current of a low-temperature coefficient and low supply voltage coefficient.
Accompanying drawing explanation
Accompanying drawing described herein is used to provide further understanding of the present application, and form a application's part, the schematic description and description of the application, for explaining the application, does not form the improper restriction to the application.In the accompanying drawings:
Fig. 1 is the principle schematic of the reference current source of low-temperature coefficient of the present invention and low supply voltage coefficient;
Fig. 2 is the circuit diagram of the band-gap reference circuit of reference current source shown in Fig. 1;
Fig. 3 is the circuit diagram of the Folded-cascode amplifier of reference current source shown in Fig. 1;
Fig. 4 is the circuit diagram of the electric current source generating circuit of reference current source shown in Fig. 1.
Embodiment
As employed some vocabulary to censure specific components in the middle of instructions and claim.Those skilled in the art should understand, and hardware manufacturer may call same assembly with different noun.This specification and claims are not used as with the difference of title the mode distinguishing assembly, but are used as the criterion of differentiation with assembly difference functionally." comprising " as mentioned in the middle of instructions and claim is in the whole text an open language, therefore should be construed to " comprise but be not limited to "." roughly " refer to that in receivable error range, those skilled in the art can solve the technical problem within the scope of certain error, reach described technique effect substantially.Instructions subsequent descriptions is implement the better embodiment of the application, and right described description is for the purpose of the rule that the application is described, and is not used to the scope limiting the application.The protection domain of the application is when being as the criterion depending on the claims person of defining.
Please refer to Fig. 1, the reference current source of low-temperature coefficient of the present invention and low supply voltage coefficient, comprising: band-gap reference circuit and electric current source generating circuit, the output port I of described band-gap reference circuit
pTATbe electrically connected described electric current source generating circuit; Described electric current source generating circuit for generation of the second electric current of a negative temperature coefficient, and with the output port I of described band-gap reference circuit
pTATthe first electric current exported superposes, by the weight regulating current mirror ratio to regulate two electric currents, with the output port I at described electric current source generating circuit
outoutput reference electric current.
Fig. 2 is the circuit diagram of the band-gap reference circuit of reference current source shown in Fig. 1, and as shown in the figure, described band-gap reference circuit comprises 4 P type metal-oxide-semiconductor MP0, MP1, MP2 and MP3,2 NPN type triode Q1 and Q2,5 resistance R1, R2, R3, R4 and R5,1 electric capacity C1,1 operational amplifier.
Preferably, the drain electrode of MP0 is connected with one end of R5; The grid of MP0 is connected with the output terminal of operational amplifier; The drain electrode of MP1 is connected with the source electrode of the source electrode of MP2, MP3; The drain electrode of MP2, the collector of Q1 are connected with the input end in the same way of operational amplifier; The grid of MP3, the drain electrode of MP3, the collector of Q2, the reverse input end of operational amplifier and output port I
pTATconnect, described output port I
pTATconnect electric current source generating circuit; The emitter of Q2 is connected with one end of R1; The emitter of Q1 is connected with one end of the other end of R1, R2; The base stage of Q1, the base stage of Q2 are connected with one end of R3, one end of R4; The other end of R4, the other end of R5, one end of C1 is connected with the output port VREF of band-gap reference circuit; The grid of MP1 is connected with bias voltage Vb; The source electrode of MP0, the source electrode of MP1 are connected with power vd D; The other end of the other end of R2, the other end of R3, electric capacity C1 is connected with GND.
Preferably, described operational amplifier is Folded-cascode amplifier.
Fig. 3 is the circuit diagram of the Folded-cascode amplifier of reference current source shown in Fig. 1, and as shown in the figure, described Folded-cascode amplifier comprises 4 P type metal-oxide-semiconductor MP4, MP5, MP6 and MP7,5 N-type metal-oxide-semiconductor MN1, MN2, MN3, MN4 and MN5.
Preferably, the grid of MN1 is connected with the input end in the same way of amplifier; The grid of MN2 is connected with the reverse input end of amplifier; The drain electrode of MN1 is connected with the source electrode of the drain electrode of MP4, MP6; The drain electrode of MN2 is connected with the source electrode of the drain electrode of MP5, MP7; The source electrode of MN1, the source electrode of MN2 are connected with the drain electrode of MN3; The drain electrode of MP6 is connected with the grid of the drain electrode of MN4, MN4, the grid of MN5; The drain electrode of MP7, the drain electrode of MN5 are connected with the output port Vout of this amplifier.
Preferably, the grid of MP4, the grid of MP5 are connected with bias voltage Vpb1; The grid of MP6, the grid of MP7 are connected with bias voltage Vpb2; The grid of MN3 is connected with bias voltage Vnb1.
Preferably, the source electrode of MP4, the source electrode of MP5 are connected with power vd D.
Preferably, the source electrode of MN3, the source electrode of MN4, the source electrode of MN5 are connected with GND.
Fig. 4 is the circuit diagram of the electric current source generating circuit of reference current source shown in Fig. 1, and as shown in the figure, described electric current source generating circuit comprises 6 P type metal-oxide-semiconductor MP8, MP9, MP10, MP11, MP12 and MP13,2 N-type metal-oxide-semiconductor MN6 and MN7,1 NPN type triode Q3 and 1 resistance R6.
Preferably, the drain electrode of MP8 is connected with the collector of Q3; The grid of MP9, the drain electrode of MP9, the source electrode of MP11 are connected with the grid of MP10; The drain electrode of MP10 is connected with the source electrode of MP12; The grid of MP11, the drain electrode of MP11, the grid of MP12, the base stage of Q3 are connected with one end of resistance R6; The grid of the drain electrode of MP12, the drain electrode of MP13 and MN6, the drain electrode of MN6, the grid of MN7 are connected; The grid of MP8, the grid of MP13 and input port I
pTATconnect; The drain electrode of MN7 is connected with output port Iout.
Preferably, the source electrode of MP8, the source electrode of MP9, the source electrode of MP10, the source electrode of MP13 are connected with power vd D.
Preferably, the source electrode of MN6, the source electrode of MN7, the emitter of Q3, the other end of resistance R6 are connected with GND.
Beneficial effect of the present invention is:
Structure is simple, and current source comprises band-gap reference circuit and electric current source generating circuit, the output port I of band-gap reference circuit
pTATbe electrically connected described electric current source generating circuit, utilize I
pTATelectric current as bias current, and adopts Folded-cascode amplifier, can reduce the impact of supply voltage on electric current, thus obtains the reference current of a low-temperature coefficient and low supply voltage coefficient.
Above-mentioned explanation illustrate and describes some preferred embodiments of the application, but as previously mentioned, be to be understood that the application is not limited to the form disclosed by this paper, should not regard the eliminating to other embodiments as, and can be used for other combinations various, amendment and environment, and can in application contemplated scope described herein, changed by the technology of above-mentioned instruction or association area or knowledge.And the change that those skilled in the art carry out and change do not depart from the spirit and scope of the application, then all should in the protection domain of the application's claims.
Claims (5)
1. a reference current source for low-temperature coefficient and low supply voltage coefficient, is characterized in that, comprising: band-gap reference circuit and electric current source generating circuit, the output port I of described band-gap reference circuit
pTATbe electrically connected described electric current source generating circuit;
Described electric current source generating circuit for generation of the second electric current of a negative temperature coefficient, and with the output port I of described band-gap reference circuit
pTATthe first electric current exported superposes, by the weight regulating current mirror ratio to regulate two electric currents, with the output port I at described electric current source generating circuit
outoutput reference electric current.
2. the reference current source of low-temperature coefficient according to claim 1 and low supply voltage coefficient, it is characterized in that, described band-gap reference circuit comprises 4 P type metal-oxide-semiconductor MP0, MP1, MP2 and MP3,2 NPN type triode Q1 and Q2,5 resistance R1, R2, R3, R4 and R5,1 electric capacity C1,1 operational amplifier;
Wherein, the drain electrode of MP0 is connected with one end of R5; The grid of MP0 is connected with the output terminal of operational amplifier; The drain electrode of MP1 is connected with the source electrode of the source electrode of MP2, MP3; The drain electrode of MP2, the collector of Q1 are connected with the input end in the same way of operational amplifier; The grid of MP3, the drain electrode of MP3, the collector of Q2, the reverse input end of operational amplifier and output port I
pTATconnect, described output port I
pTATconnect electric current source generating circuit; The emitter of Q2 is connected with one end of R1; The emitter of Q1 is connected with one end of the other end of R1, R2; The base stage of Q1, the base stage of Q2 are connected with one end of R3, one end of R4; The other end of R4, the other end of R5, one end of C1 is connected with the output port VREF of band-gap reference circuit; The grid of MP1 is connected with bias voltage Vb; The source electrode of MP0, the source electrode of MP1 are connected with power vd D; The other end of the other end of R2, the other end of R3, electric capacity C1 is connected with GND.
3. the reference current source of low-temperature coefficient according to claim 2 and low supply voltage coefficient, is characterized in that, described operational amplifier is Folded-cascode amplifier.
4. the reference current source of low-temperature coefficient according to claim 3 and low supply voltage coefficient, it is characterized in that: described Folded-cascode amplifier comprises 4 P type metal-oxide-semiconductor MP4, MP5, MP6 and MP7,5 N-type metal-oxide-semiconductor MN1, MN2, MN3, MN4 and MN5;
Wherein, the grid of MN1 is connected with the input end in the same way of amplifier; The grid of MN2 is connected with the reverse input end of amplifier; The drain electrode of MN1 is connected with the source electrode of the drain electrode of MP4, MP6; The drain electrode of MN2 is connected with the source electrode of the drain electrode of MP5, MP7; The source electrode of MN1, the source electrode of MN2 are connected with the drain electrode of MN3; The drain electrode of MP6 is connected with the grid of the drain electrode of MN4, MN4, the grid of MN5; The drain electrode of MP7, the drain electrode of MN5 are connected with the output port Vout of this amplifier;
The grid of MP4, the grid of MP5 are connected with bias voltage Vpb1; The grid of MP6, the grid of MP7 are connected with bias voltage Vpb2; The grid of MN3 is connected with bias voltage Vnb1;
The source electrode of MP4, the source electrode of MP5 are connected with power vd D;
The source electrode of the source electrode of MN3, the source electrode of MN4, MN5 is connected with GND.
5. the reference current source of low-temperature coefficient according to claim 4 and low supply voltage coefficient, it is characterized in that: described electric current source generating circuit comprises 6 P type metal-oxide-semiconductor MP8, MP9, MP10, MP11, MP12 and MP13,2 N-type metal-oxide-semiconductor MN6 and MN7,1 NPN type triode Q3 and 1 resistance R6;
Wherein, the drain electrode of MP8 is connected with the collector of Q3; The grid of MP9, the drain electrode of MP9, the source electrode of MP11 are connected with the grid of MP10; The drain electrode of MP10 is connected with the source electrode of MP12; The grid of MP11, the drain electrode of MP11, the grid of MP12, the base stage of Q3 are connected with one end of resistance R6; The grid of the drain electrode of MP12, the drain electrode of MP13 and MN6, the drain electrode of MN6, the grid of MN7 are connected; The grid of MP8, the grid of MP13 and input port I
pTATconnect; The drain electrode of MN7 is connected with output port Iout;
The source electrode of MP8, the source electrode of MP9, the source electrode of MP10, the source electrode of MP13 are connected with power vd D;
The emitter of the source electrode of MN6, the source electrode of MN7, Q3, the other end of resistance R6 are connected with GND.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410787578.6A CN104460805A (en) | 2014-12-17 | 2014-12-17 | Reference current source with low temperature coefficient and low power supply voltage coefficient |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410787578.6A CN104460805A (en) | 2014-12-17 | 2014-12-17 | Reference current source with low temperature coefficient and low power supply voltage coefficient |
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| CN201410787578.6A Pending CN104460805A (en) | 2014-12-17 | 2014-12-17 | Reference current source with low temperature coefficient and low power supply voltage coefficient |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105867518A (en) * | 2016-05-18 | 2016-08-17 | 无锡科技职业学院 | Current mirror for effectively inhibiting power source voltage influence |
| CN113805636A (en) * | 2020-06-16 | 2021-12-17 | 华润微集成电路(无锡)有限公司 | Current regulating circuit based on external resistor |
| CN114564069A (en) * | 2022-03-11 | 2022-05-31 | 北京国科天迅科技有限公司 | Reference current generating circuit and current mode logic circuit |
| CN116805859A (en) * | 2023-08-28 | 2023-09-26 | 江苏润石科技有限公司 | Operational amplifier offset voltage regulation circuit and method |
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| US20060103455A1 (en) * | 2004-11-15 | 2006-05-18 | Samsung Electronics Co., Ltd. | Resistorless bias current generation circuit |
| CN101013331A (en) * | 2006-12-28 | 2007-08-08 | 东南大学 | CMOS reference voltage source with adjustable output voltage |
| CN102354245A (en) * | 2011-08-05 | 2012-02-15 | 电子科技大学 | Band gap voltage reference source |
| CN103365330A (en) * | 2012-04-09 | 2013-10-23 | 联咏科技股份有限公司 | Reference voltage/current generation device |
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Patent Citations (5)
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| US20020093324A1 (en) * | 2001-01-18 | 2002-07-18 | Dar-Chang Juang | Low temperature coefficient reference current generator |
| US20060103455A1 (en) * | 2004-11-15 | 2006-05-18 | Samsung Electronics Co., Ltd. | Resistorless bias current generation circuit |
| CN101013331A (en) * | 2006-12-28 | 2007-08-08 | 东南大学 | CMOS reference voltage source with adjustable output voltage |
| CN102354245A (en) * | 2011-08-05 | 2012-02-15 | 电子科技大学 | Band gap voltage reference source |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105867518A (en) * | 2016-05-18 | 2016-08-17 | 无锡科技职业学院 | Current mirror for effectively inhibiting power source voltage influence |
| CN113805636A (en) * | 2020-06-16 | 2021-12-17 | 华润微集成电路(无锡)有限公司 | Current regulating circuit based on external resistor |
| CN114564069A (en) * | 2022-03-11 | 2022-05-31 | 北京国科天迅科技有限公司 | Reference current generating circuit and current mode logic circuit |
| CN116805859A (en) * | 2023-08-28 | 2023-09-26 | 江苏润石科技有限公司 | Operational amplifier offset voltage regulation circuit and method |
| CN116805859B (en) * | 2023-08-28 | 2023-11-07 | 江苏润石科技有限公司 | Operational amplifier offset voltage regulation circuit and method |
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Application publication date: 20150325 |