CN107092297B - Second order compensation band-gap reference circuit for signal amplifier - Google Patents
Second order compensation band-gap reference circuit for signal amplifier Download PDFInfo
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- CN107092297B CN107092297B CN201710443246.XA CN201710443246A CN107092297B CN 107092297 B CN107092297 B CN 107092297B CN 201710443246 A CN201710443246 A CN 201710443246A CN 107092297 B CN107092297 B CN 107092297B
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- npn triode
- pmos
- pmos tube
- amplifier
- current mirror
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/561—Voltage to current converters
Abstract
The invention discloses the second order compensation band-gap reference circuits for signal amplifier, including PMOS current mirror, VBG generation module, positive temperature coefficient voltage difference generation module, and the amplifier with NPN triode input pair, wherein, positive temperature coefficient voltage difference generation module includes two NPN triode series arms, VBG generation module and two NPN triode series arms are connect with PMOS current mirror, two input terminals of amplifier are connected to correspondingly on the route between two NPN triode series arms and PMOS current mirror, the NMOS current mirror that amplifier is equipped with as its interior NPN triode emitter mirror image power supply, two input terminals of amplifier are that NPN transistor base is constituted in amplifier.The present invention can provide accurate voltage and current when applying, and be able to achieve the constant gain of total temperature range.
Description
Technical field
The present invention relates to band-gap reference circuits, are particularly used for the second order compensation band-gap reference circuit of signal amplifier.
Background technique
Signal amplifier is widely used in the fields such as communication, broadcast, radar, TV, automatic control, is in signal processing
Critical component, effect is to amplify signal, for rear end use.High-precision signal amplifier needs accurately faint
Linearly amplification, it is therefore desirable to accurate voltage and current is provided.It lacks of proper care at random introducing to reduce amplifier in closed loop
Error, to usually using NPN triode, NPN triode is inputted compared to metal-oxide-semiconductor to there is smaller mistake for the input of amplifier
It adjusts, the current gain decline of NPN triode, makes the electric current that VBG access flows through under low temperature increase at low temperature, produce under low temperature
Raw second order compensation effect obtains -40 degree to 150 degree of more accurate voltage values.However, the input of signal amplifier is to using NPN
After triode, influenced by NPN triode current gain decline under low temperature, will lead to signal amplifier can not achieve total temperature
The constant gain of range, this affects the popularization and application inputted to the signal amplifier for using NPN triode to a certain extent.
Summary of the invention
It is an object of the invention to solve to input to using the signal amplifier of NPN triode to can not achieve total temperature range
The problem of constant gain, provides a kind of second order compensation band-gap reference circuit for signal amplifier, can provide when applying
Accurate voltage and current, and it is able to achieve the constant gain of total temperature range.
The purpose of the present invention is achieved through the following technical solutions: the second order compensation band-gap reference for signal amplifier
Circuit, including PMOS current mirror, VBG generation module, positive temperature coefficient voltage difference generation module and have NPN triode it is defeated
The amplifier entered pair, the positive temperature coefficient voltage difference generation module include two NPN triode series arms, and the VBG is raw
It is connect with PMOS current mirror at module and two NPN triode series arms, two input terminals one of the amplifier are a pair of
On the route being connected between two NPN triode series arms and PMOS current mirror answered, it is its interior NPN tri- that amplifier, which is equipped with,
The NMOS current mirror of pole pipe emitter mirror image power supply, two input terminals of amplifier are that NPN transistor base is constituted in amplifier；
Positive temperature coefficient voltage difference generation module, for exporting PTAT current；
PMOS current mirror, the electric current for PTAT current to be superimposed with the electric current of two input terminal of amplifier are supplied to NMOS electricity
Flow mirror and VBG generation module；
NMOS current mirror for receiving the electric current of PMOS current mirror offer, and is NPN triode emitter mirror in amplifier
As power supply；
VBG generation module, for receiving the electric current of PMOS current mirror offer, for generating temperature independent voltage.This
The invention PTAT current (proportional to absolute temperature) is and absolute temperature is proportional
Electric current.At low temperature, the current gain of NPN triode becomes smaller the present invention in amplifier, therefore the base stage electricity of the extraction of input pair
Rheology is big, and the electric current for flowing into PMOS current mirror is that standard PTAT current is added with the base current of triode input pair, after addition
Electric current it is bigger than the PTAT current of standard at low temperature, this electric current is adjusted by PMOS current mirror mirror to VBG generation module, VBG
It is made into a temperature independent voltage.The present invention to the input of amplifier to power supply when specifically the emitter terminal of NPN pipe is supplied
Electricity, base terminal can flow into some electric currents, this is caused the result is that the electric current of collector terminal will be more smaller, therefore the present invention is right
This is compensated, it is therefore an objective to allow collector terminal electric current be standard PTAT current.
Further, the PMOS current mirror includes the first PMOS tube, the second PMOS tube, third PMOS tube, the 4th PMOS
Pipe, the 5th PMOS tube and the 6th PMOS tube, first PMOS tube, the second PMOS tube, third PMOS tube, the 4th PMOS tube, the
The grid of five PMOS tube and the 6th PMOS tube is connect with the output end of amplifier, and six source electrode is all connected with power supply, institute
State two NPN triode series arms of positive temperature coefficient voltage difference generation module respectively with the drain electrode of the first PMOS tube, second
PMOS tube drain electrode connects, the NMOS current mirror connection in the drain electrode and amplifier of third PMOS tube, and the drain electrode of the 4th PMOS tube is outstanding
The drain electrode of sky, the 5th PMOS tube is connect with VBG generation module, and the drain electrode of the 6th PMOS tube is for exporting PTAT current and amplifier
The electric current of the electric current superposition of two input terminals.
Further, two articles of NPN triode series arms of the positive temperature coefficient voltage difference generation module are respectively
One NPN triode series arm and the second NPN triode series arm, the first NPN triode series arm include first
The base stage of both NPN triode and the second NPN triode, first NPN triode and the second NPN triode is and collector
Connection, the first NPN triode emitter are connect with the collector of the second NPN triode, and the emitter of the second NPN triode connects
Ground, the first NPN triode collector and PMOS current mirror, the inverting input terminal of the amplifier are connected to PMOS current mirror
On route between the first NPN triode collector；
The second NPN triode series arm includes third NPN triode, the 4th NPN triode and first resistor, institute
The base stage for stating both third NPN triode and the 4th NPN triode is connect with collector, third NPN triode emitter with
The collector of 4th NPN triode connects, the emitter ground connection of the 4th NPN triode, described first resistor one end and the 3rd NPN
Transistor collector connection, the first resistor other end are connect with PMOS current mirror, and the non-inverting input terminal of the amplifier is connected to
On route between PMOS current mirror and first resistor.First NPN triode, the second NPN triode, the 3rd NPN in the present invention
The base stage of triode and the 4th NPN triode is shorted with collector, it is only necessary to base stage to emitter forward conduction voltage,
It therefore is to make diode use in fact.
Further, the emitter area of NPN triode and the 2nd NPN tri- in the first NPN triode series arm
The ratio of the emitter area of NPN triode is 1:8 in pole pipe series arm.Positive temperature coefficient voltage difference of the invention generates mould
The triode of the 1:8 ratio of two-stage series connection in block, the PTAT voltage that the 1:8 ratio of twice single-stage can be generated is poor, can improve
The precision of circuit reduces the influence lacked of proper care at random.
Further, the VBG generation module includes the 5th NPN triode and second resistance, the 5th NPN triode
Base stage connect with its collector, emitter ground connection, second resistance one end connect with the 5th NPN triode collector, separately
One end is connect with PMOS current mirror.The present invention is in application, circuit output of the VBG between second resistance and PMOS current mirror.
It further, further include start-up circuit for the second order compensation band-gap reference circuit of signal amplifier, the starting
Circuit is connect with PMOS current mirror, after rising to operating voltage for supply voltage, provides a drop-down for PMOS current mirror
Electric current promotes each access in PMOS current mirror to generate current path.
Further, the start-up circuit includes the 7th NMOS tube, the 15th PMOS tube and the 16th PMOS tube, and described the
Seven NMOS tube grids, the 15th PMOS tube source electrode and the 16th PMOS tube source electrode are all connected with power supply, the 7th NMOS tube source electrode, the tenth
Six PMOS tube drain electrode be grounded, the 7th NMOS tube drain electrode with the 15th PMOS tube drain electrode connect, the 15th PMOS tube grid with put
The output end connection of big device, the 16th PMOS tube grid are connected between the drain electrode of the 7th NMOS tube and the drain electrode of the 15th PMOS tube
On route.
In conclusion the invention has the following advantages: (1) present invention by introducing second order compensation effect, makes to export
Voltage shows good temperature characterisitic under low temperature, and increases second order compensation electric current on the basis of standard PTAT current to realize
Signal amplifier gain does not vary with temperature, and realizes the constant gain of total temperature range.
(2) present invention is able to achieve accurately bandgap voltage reference and electric current.Wherein, voltage is to need temperature independent band
2 ranks compensate constant voltage；Electric current needs compensate under standard PTAT current, so that the current collection of the triode input pair of amplifier
Electrode current is standard PTAT current.
Detailed description of the invention
Attached drawing described herein is used to provide to further understand the embodiment of the present invention, constitutes one of the application
Point, do not constitute the restriction to the embodiment of the present invention.In the accompanying drawings:
Fig. 1 is schematic structural view of the invention.
Fig. 2 is the structural schematic diagram of hall signal amplifier.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below with reference to embodiment and attached drawing, to this
Invention is described in further detail, and exemplary embodiment of the invention and its explanation for explaining only the invention, are not made
For limitation of the invention.
Embodiment
As shown in Figure 1, being used for the second order compensation band-gap reference circuit of signal amplifier, including PMOS current mirror, VBG are generated
Module, start-up circuit, positive temperature coefficient voltage difference generation module and the amplifier A1 with NPN triode input pair,
In, positive temperature coefficient voltage difference generation module include two NPN triode series arms, VBG generation module, start-up circuit, with
And two NPN triode series arms are connect with PMOS current mirror.Two input terminals of the amplifier A1 of the present embodiment are one by one
On the corresponding route being connected between two NPN triode series arms and PMOS current mirror, amplifier A1 is equipped with as in it
The NMOS current mirror of NPN triode emitter mirror image power supply, two input terminals of amplifier A1 are NPN triode in amplifier A1
Base stage is constituted.The positive temperature coefficient voltage difference generation module of the present embodiment, for exporting PTAT current；PMOS current mirror, is used for
The electric current that PTAT current is superimposed with the electric current of two input terminal of amplifier A1 is supplied to NMOS current mirror and VBG generation module；
NMOS current mirror is supplied for receiving the electric current of PMOS current mirror offer, and for NPN triode emitter mirror image in amplifier A1
Electricity；VBG generation module, for receiving the electric current of PMOS current mirror offer, for generating temperature independent voltage；Starting electricity
Road after rising to operating voltage for supply voltage, provides a pull-down current for PMOS current mirror, promotes PMOS current mirror
In each access generate current path.
The PMOS current mirror of the present embodiment includes the first PMOS tube MP1, the second PMOS tube MP2, third PMOS tube MP3, the
Four PMOS tube MP4, the 5th PMOS tube MP5 and the 6th PMOS tube MP6, wherein the first PMOS tube MP1, the second PMOS tube MP2,
Three PMOS tube MP3, the 4th PMOS tube MP4, the 5th PMOS tube MP5 and the 6th PMOS tube MP6 grid with amplifier A1
Output end connection, six source electrode is all connected with power vd D, two NPN triodes of positive temperature coefficient voltage difference generation module
Series arm respectively with the first PMOS tube MP1 drain electrode, the second PMOS tube MP2 drain electrode connect, the drain electrode of third PMOS tube MP3 with put
NMOS current mirror connection in big device A1, the drain electrode of the 4th PMOS tube MP4 is hanging, and the drain electrode of the 5th PMOS tube MP5 and VBG are generated
Module connection, the electricity that the drain electrode of the 6th PMOS tube MP6 is superimposed for exporting PTAT current with the electric current of two input terminal of amplifier A1
Stream.
Two NPN triode series arms of the positive temperature coefficient voltage difference generation module of the present embodiment are respectively first
NPN triode series arm and the second NPN triode series arm, wherein the first NPN triode series arm includes first
The base stage of both NPN triode Q1 and the second NPN triode Q2, the first NPN triode Q1 and the second NPN triode Q2 with collection
Electrode connection, the first NPN triode Q1 emitter are connect with the collector of the second NPN triode Q2, the second NPN triode Q2's
Emitter ground connection.The inverting input terminal of the first NPN triode Q1 collector and PMOS current mirror of the present embodiment, amplifier A1 connects
It connects on the route between PMOS current mirror and the first NPN triode Q1 collector.First NPN triode of the present embodiment is connected
The specific connection structure of branch and PMOS current mirror are as follows: the drain electrode of the first PMOS tube MP1 is by being connected to the first NPN triode Q1
It is connect on collector with the first NPN triode series arm.
The second NPN triode series arm of the present embodiment include third NPN triode Q3, the 4th NPN triode Q4 and
First resistor R1, wherein the base stage of both third NPN triode Q3 and the 4th NPN triode Q4 is connect with collector, third
NPN triode Q3 emitter is connect with the collector of the 4th NPN triode Q4, the emitter ground connection of the 4th NPN triode Q4, the
One one end resistance R1 is connect with third NPN triode Q3 collector, and the first resistor R1 other end is connect with PMOS current mirror, amplification
The non-inverting input terminal of device A1 is connected on the route between PMOS current mirror and first resistor R1.2nd NPN tri- of the present embodiment
The specific connection structure of pole pipe series arm and PMOS current mirror are as follows: the drain electrode of the second PMOS tube MP2 is by being connected to the first electricity
The other end at the opposite connection end third NPN triode Q3 resistance R1 is connect with the second NPN triode series arm.The present embodiment is having
When body is arranged, the emitter area and the second NPN triode series arm of NPN triode in the first NPN triode series arm
The ratio of the emitter area of middle NPN triode is 1:8.
The VBG generation module of the present embodiment includes the 5th NPN triode Q5 and second resistance R2, wherein tri- pole the 5th NPN
The base stage of pipe Q5 is connect with its collector, and emitter ground connection, the one end second resistance R2 and the 5th NPN triode Q5 collector connect
Connect, the other end is connect with PMOS current mirror, one end of second resistance R2 connection PMOS current mirror specifically with the 5th PMOS tube MP5
Drain electrode connection.For the present invention after PTAT current flows into VBG generation module, the both ends second resistance R2 are PATA voltage, the 5th NPN tri-
Pole pipe Q5 both end voltage is NTAT voltage, wherein PATA voltage is the voltage for increasing and increasing with temperature, and NTAT voltage is with temperature
Degree increases and reduced voltage, the two are added by a certain percentage, is made into just temperature-independent voltage, as band
Gap reference voltage.
As shown in Fig. 2, the amplifier A1 of the present embodiment be hall signal amplifier, be used for faint hall signal into
Row amplification, wherein Hall signal refers to the voltage signal of the uV rank generated according to hall principle, electric current by conductor.Amplification
Device A1 includes the 6th NPN triode Q6, the 7th NPN triode Q7, the first NMOS tube MN1, the second NMOS tube MN2, the 3rd NMOS
Pipe MN3, the 4th NMOS tube MN4, the 5th NMOS tube MN5, the 6th NMOS tube MN6, the 7th PMOS tube MP7, the 8th PMOS tube MP8,
9th PMOS tube MP9, the tenth PMOS tube MP10, the 11st PMOS tube MP11, the 12nd PMOS tube MP12, the 13rd PMOS tube
MP13 and the 14th PMOS tube MP14, wherein the first NMOS tube MN1, the second NMOS tube MN2, third NMOS tube MN3 and the 4th
The source grounding of NMOS tube MN4, the grid of the first NMOS tube MN1 are connect with the grid of the second NMOS tube MN2, and first
The drain electrode of NMOS tube MN1 is connect with the drain electrode of third PMOS tube MP3, for receiving the electric current of PMOS current mirror output.This implementation
Non-inverting input terminal of the base stage of 6th NPN triode Q6 as amplifier A1 in example, the base stage of the 7th NPN triode Q7, which is used as, puts
The inverting input terminal of big device A1, the emitter of the 6th NPN triode Q6 are connect with the emitter of the 7th NPN triode Q7, and second
The drain electrode of NMOS tube MN2 is connected to the line between the emitter of the 6th NPN triode Q6 and the emitter of the 7th NPN triode Q7
On the road.The first NMOS tube MN1 and the second NMOS tube MN2 of the present embodiment constitute the NMOS current mirror of amplifier A1, the 6th NPN tri-
Pole pipe Q6 and the 7th NPN triode Q7 constitutes the NPN triode input pair of amplifier A1.The collector of 6th NPN triode Q6
It is connect with the drain electrode of the 11st PMOS tube MP11, the drain electrode of the collector and the 12nd PMOS tube MP12 of the 7th NPN triode Q7
Connection, the grid of the 11st PMOS tube MP11 are connect with the grid of the 12nd PMOS tube MP12.7th PMOS tube MP7, the 8th
The source electrode of PMOS tube MP8, the 9th PMOS tube MP9 and the tenth PMOS tube MP10 are all connected with power vd D, the 7th PMOS tube MP7
Grid be connected to the 6th NPN triode Q6 collector and the 11st PMOS tube MP11 drain electrode between route on, the 7th PMOS
The drain electrode of pipe MP7 is connect with the source electrode of the 11st PMOS tube MP11.The grid of 8th PMOS tube MP8 is connected to tri- pole the 7th NPN
On route between pipe Q7 collector and the 12nd PMOS tube MP12 drain electrode, the drain electrode of the 8th PMOS tube MP8 and the 12nd PMOS
The source electrode of pipe MP12 connects.The grid of third NMOS tube MN3 is connect with the grid of the 4th NMOS tube MN4, the 5th NMOS tube MN5's
Grid is connect with the grid of the 6th NMOS tube MN6, and the source electrode of the 5th NMOS tube MN5 is connect with the drain electrode of third NMOS tube MN3, the
The source electrode of six NMOS tube MN6 is connect with the drain electrode of the 4th NMOS tube MN4.The drain electrode and the 5th NMOS tube of 13rd PMOS tube MP13
The drain electrode of MN5 connects, and the source electrode of the 13rd PMOS tube MP13 is connect with the drain electrode of the 9th PMOS tube MP9, the 13rd PMOS tube
The grid of MP13 is connected on the route between the 11st PMOS tube MP11 grid and the 12nd PMOS tube MP12 grid, and the 9th
PMOS tube MP9 grid connects on the route between the 7th NPN triode Q7 collector and the 12nd PMOS tube MP12 drain electrode.Tenth
The drain electrode of four PMOS tube MP14 is connect with the drain electrode of the 6th NMOS tube MN6, and the output end of amplifier A1 is arranged in the 14th PMOS
On route between pipe MP14 drain electrode and the 6th NMOS tube MN6 drain electrode.The source electrode and the tenth PMOS tube of 14th PMOS tube MP14
The drain electrode of MP10 connects, and the grid of the 14th PMOS tube MP14 is connected to the 11st PMOS tube MP11 grid and the 12nd PMOS tube
On route between MP12 grid, the tenth PMOS tube MP10 grid is connected to the 6th NPN triode Q6 collector and the 11st
On route between PMOS tube MP11 drain electrode.For the amplifier A1 of the present embodiment under closed loop states, two input terminals are same voltage
, this is adjusted by the output of amplifier A1.
In specific application, after supply voltage VDD rises to operating voltage, start-up circuit is to PMOS electricity for the present embodiment
The grid for flowing the PMOS tube in mirror provides a pull-down current, and each access is promoted to generate current path, and amplifier A1 starts work
Make and pass through closed loop feedback to make two input terminal voltages consistent, after circuit enters normal operating conditions, start-up circuit shutdown, not shadow
Ring loop work.
The start-up circuit of the present embodiment includes the 7th NMOS tube MN7, the 15th PMOS tube MP15 and the 16th PMOS tube
MP16, wherein the 7th NMOS tube MN7 grid, the 15th PMOS tube MP15 source electrode and the 16th PMOS tube MP16 source electrode are all connected with
Power vd D, the 7th NMOS tube MN7 source electrode, the 16th PMOS tube MP16 drain electrode are grounded, the 7th NMOS tube MN7 drain electrode and the tenth
Five PMOS tube MP15 drain electrode connection, the 15th PMOS tube MP15 grid are connect with the output end of amplifier A1, the 16th PMOS tube
MP16 grid is connected on the route between the 7th NMOS tube MN7 drain electrode and the 15th PMOS tube MP15 drain electrode.The present embodiment
The grid of 7th NMOS tube MN7 meets power vd D, is constantly on state, and M/L very little, about 0.6um/50um, can be with
It is considered a very big coarse resistance, after VDD is powered on, loop is not established, therefore the 15th PMOS tube MP15 does not have
There is electric current to pass through, while the grid voltage of the 15th PMOS tube MP15 is also VDD, at this time the grid quilt of the 16th PMOS tube MP16
7th NMOS tube MN7 pulls down to GND, the 7th NMOS tube MN7 conducting, the grid of the PMOS tube in PMOS current mirror and the 15th
The drop-down of PMOS tube MP15 grid, generates starting current, makes two input terminal voltages of amplifier A1 consistent.
The present embodiment is in application, the first NPN triode series arm generates standard PTAT current I1, the second NPN triode
Series arm generates standard PTAT current I2, and the base current of the non-inverting input terminal of amplifier A1 is I5, the reverse phase of amplifier A1
The base current of input terminal is I6, and the first PMOS tube MP1 drain electrode output electric current I3 is the sum of I1 and I6, the second PMOS tube MP2 leakage
It is the sum of I2 and I5 that pole, which exports electric current I4,.The PMOS current mirror mirror of the present embodiment exports Ib1, is supplied to pre- in amplifier A1
The input pipe of amplifier, prime amplifier is NPN pipe, this electric current Ib1 is powered by NMOS current mirror mirror, is equal to NPN input pipe
Emitter current, the base current of the NPN triode of prime amplifier input at this time is exactly equal to the input pair of increased band-gap reference
The base current of generation, collector current are exactly the PTAT current of standard, therefore obtained mutual conductance does not vary with temperature
Constant.
The present embodiment does input pair using the NPN triode as prime amplifier, in the present embodiment application by matching
It sets and inputs that allow electric current the input of prime amplifier be standard PTAT current to pipe collector electric current；By concatenated according to 2 grades
The structure of triode increases PTAT voltage, reduces random voltages mismatch；By the resistance and amplifier that configure VBG generation module
The base current of the input NPN triode of A1 realizes 2 rank bandgap voltage references of 0 temperature coefficient.
Above-described specific embodiment has carried out further the purpose of the present invention, technical scheme and beneficial effects
It is described in detail, it should be understood that being not intended to limit the present invention the foregoing is merely a specific embodiment of the invention
Protection scope, all within the spirits and principles of the present invention, any modification, equivalent substitution, improvement and etc. done should all include
Within protection scope of the present invention.
Claims (6)
1. being used for the second order compensation band-gap reference circuit of signal amplifier, which is characterized in that generated including PMOS current mirror, VBG
Module, positive temperature coefficient voltage difference generation module and the amplifier (A1) with NPN triode input pair, the positive temperature
Coefficient voltages difference generation module includes two NPN triode series arms, the VBG generation module and two NPN triode strings
Connection branch is connect with PMOS current mirror, and two input terminals of the amplifier (A1) are connected to two NPN tri- correspondingly
On route between pole pipe series arm and PMOS current mirror, it is its interior NPN triode emitter mirror image that amplifier (A1), which is equipped with,
The NMOS current mirror of power supply, two input terminals of amplifier (A1) are that NPN transistor base is constituted in amplifier (A1)；
Positive temperature coefficient voltage difference generation module, for exporting PTAT current；
PMOS current mirror, for the electric current that PTAT current is superimposed with the electric current of two input terminal of amplifier (A1) to be supplied to NMOS electricity
Flow mirror and VBG generation module；
NMOS current mirror for receiving the electric current of PMOS current mirror offer, and is NPN triode emitter mirror in amplifier (A1)
As power supply；
VBG generation module, for receiving the electric current of PMOS current mirror offer, for generating temperature independent voltage；
The PMOS current mirror includes the first PMOS tube (MP1), the second PMOS tube (MP2), third PMOS tube (MP3), the 4th
PMOS tube (MP4), the 5th PMOS tube (MP5) and the 6th PMOS tube (MP6), first PMOS tube (MP1), the second PMOS tube
(MP2), third PMOS tube (MP3), the 4th PMOS tube (MP4), the 5th PMOS tube (MP5) and the 6th PMOS tube (MP6) six
Grid is connect with the output end of amplifier (A1), and six source electrode is all connected with power supply (VDD), the positive temperature coefficient voltage difference
Two NPN triode series arms of generation module drain with the first PMOS tube (MP1) drain electrode, the second PMOS tube (MP2) respectively
Connection, the drain electrode of third PMOS tube (MP3) are connect with the NMOS current mirror in amplifier (A1), the leakage of the 4th PMOS tube (MP4)
Extremely hanging, the drain electrode of the 5th PMOS tube (MP5) is connect with VBG generation module, and the drain electrode of the 6th PMOS tube (MP6) is for exporting
The electric current that PTAT current is superimposed with the electric current of two input terminal of amplifier (A1).
2. the second order compensation band-gap reference circuit according to claim 1 for signal amplifier, which is characterized in that described
Two NPN triode series arms of positive temperature coefficient voltage difference generation module be respectively the first NPN triode series arm and
Second NPN triode series arm, the first NPN triode series arm include the first NPN triode (Q1) and the 2nd NPN
The base stage of both triode (Q2), first NPN triode (Q1) and the second NPN triode (Q2) is connect with collector,
First NPN triode (Q1) emitter is connect with the collector of the second NPN triode (Q2), the hair of the second NPN triode (Q2)
The inverting input terminal of emitter grounding, the first NPN triode (Q1) collector and PMOS current mirror, the amplifier (A1) connects
It connects on the route between PMOS current mirror and the first NPN triode (Q1) collector；
The second NPN triode series arm includes third NPN triode (Q3), the 4th NPN triode (Q4) and the first electricity
It hinders (R1), the base stage of the third NPN triode (Q3) and the 4th NPN triode (Q4) the two is connect with collector, third
NPN triode (Q3) emitter is connect with the collector of the 4th NPN triode (Q4), the emitter of the 4th NPN triode (Q4)
Ground connection, described first resistor one end (R1) connect with third NPN triode (Q3) collector, first resistor (R1) other end and
The connection of PMOS current mirror, the non-inverting input terminal of the amplifier (A1) are connected between PMOS current mirror and first resistor (R1)
On route.
3. the second order compensation band-gap reference circuit according to claim 1 for signal amplifier, which is characterized in that described
The emitter area of NPN triode and tri- pole NPN in the second NPN triode series arm in first NPN triode series arm
The ratio of the emitter area of pipe is 1:8.
4. the second order compensation band-gap reference circuit according to claim 1 for signal amplifier, which is characterized in that described
VBG generation module include the 5th NPN triode (Q5) and second resistance (R2), the base stage of the 5th NPN triode (Q5) and
The connection of its collector, emitter ground connection, second resistance one end (R2) is connect with the 5th NPN triode (Q5) collector, another
One end is connect with PMOS current mirror.
5. the second order compensation band-gap reference circuit of signal amplifier is used for described according to claim 1~any one of 4,
It is characterized in that, further includes start-up circuit, the start-up circuit is connect with PMOS current mirror, rises to work electricity for supply voltage
After pressure, a pull-down current is provided for PMOS current mirror, each access in PMOS current mirror is promoted to generate current path.
6. the second order compensation band-gap reference circuit according to claim 5 for signal amplifier, which is characterized in that described
Start-up circuit include the 7th NMOS tube (MN7), the 15th PMOS tube (MP15) and the 16th PMOS tube (MP16), the described 7th
NMOS tube (MN7) grid, the 15th PMOS tube (MP15) source electrode and the 16th PMOS tube (MP16) source electrode are all connected with power supply
(VDD), the 7th NMOS tube (MN7) source electrode, the 16th PMOS tube (MP16) drain electrode be grounded, the 7th NMOS tube (MN7) drain electrode with
The drain electrode connection of 15th PMOS tube (MP15), the 15th PMOS tube (MP15) grid are connect with the output end of amplifier (A1), the
16 PMOS tube (MP16) grid is connected to the line between the drain electrode of the 7th NMOS tube (MN7) and the drain electrode of the 15th PMOS tube (MP15)
On the road.
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| CN201710443246.XA CN107092297B (en) | 2017-06-13 | 2017-06-13 | Second order compensation band-gap reference circuit for signal amplifier |
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| CN107092297B true CN107092297B (en) | 2019-04-16 |
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| US10958227B2 (en) | 2019-05-07 | 2021-03-23 | Analog Devices, Inc. | Amplifier nonlinear offset drift correction |
| CN110187166A (en) * | 2019-06-26 | 2019-08-30 | 成都芯进电子有限公司 | A kind of current sensor temperature-compensation circuit to float for low temperature |
| CN112506262A (en) * | 2020-12-29 | 2021-03-16 | 上海华力微电子有限公司 | High-utilization-rate band-gap reference circuit |
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| US6661713B1 (en) * | 2002-07-25 | 2003-12-09 | Taiwan Semiconductor Manufacturing Company | Bandgap reference circuit |
| US7078958B2 (en) * | 2003-02-10 | 2006-07-18 | Exar Corporation | CMOS bandgap reference with low voltage operation |
| CN1987134A (en) * | 2006-12-14 | 2007-06-27 | 江苏江成冶金设备制造有限公司 | Thread connection anti-loose fastener |
| CN103199852B (en) * | 2013-03-14 | 2015-09-09 | 电子科技大学 | A kind of analog multiplier for Active PFC chip |
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