CN106155152A - A kind of band-gap reference circuit with high PSRR characteristic - Google Patents
A kind of band-gap reference circuit with high PSRR characteristic Download PDFInfo
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Abstract
The invention discloses a kind of band-gap reference circuit with high PSRR characteristic, it includes band gap reference core circuit, reference voltage generating circuit and leakage path；The DC supply input end of band gap reference core circuit, reference voltage generating circuit and leakage path is connected with DC source VDD, first outfan of band gap reference core circuit is connected with the control input of reference voltage generating circuit, second outfan of band gap reference core circuit is connected with the control input of leakage path, the first outfan output reference voltage V of reference voltage generating circuitREF, the 3rd outfan of the second outfan of reference voltage generating circuit, the outfan of leakage path and band gap reference core circuit all with dock.The present invention effectively reduces DC source VDD to the interference between band gap reference core circuit and each branch road thereof, the resistance between increase DC source VDD and band gap reference core circuit, enhancing PSRR and circuit stability.
Description
Technical field
The present invention relates to band-gap reference circuit field, particularly relate to a kind of band-gap reference circuit with high PSRR characteristic.
Background technology
The ultimate principle of band-gap reference circuit is that the voltage by two with opposite temperature coefficients is added with suitable weight, finally obtains
Must have the reference voltage of zero-temperature coefficient.Such as, voltage V+ has positive temperature coefficient, and voltage V-has negative temperature coefficient,
There is suitable weight α and weight beta, meetThus obtain the benchmark electricity with zero-temperature coefficient
Pressure, the expression formula of reference voltage is Vref=α V++βV-。
Bipolar transistor (BJT) has a following two characteristic:
1, the base-emitter voltage V of bipolar transistorBEVoltage is inversely proportional to absolute temperature；
2, under different collector currents, difference DELTA V of the base-emitter voltage of bipolar transistorBEBecome with absolute temperature
Direct ratio.Therefore bipolar transistor may make up the core of band-gap reference voltage circuit.
In band-gap reference circuit, the fluctuation of supply voltage, the fluctuation of Vref can be caused.PSRR is to weigh circuit to electricity
The parameter of the rejection ability of noise on the line of source.Therefore, it is necessary to design one strengthens PSRR, power-supply fluctuation pair can be reduced
The band-gap reference circuit of the interference that band-gap reference circuit brings.
Summary of the invention
It is an object of the invention to overcome the deficiencies in the prior art, it is provided that a kind of band-gap reference electricity with high PSRR characteristic
Road, reduces the DC source VDD interference to DC supply input terminal voltage Vd of band gap reference core circuit and each branch road thereof, carries
High PSRR；Use the straight of the current circuit of Cascade structure, increase DC source VDD and band gap reference core circuit
Resistance between stream electrical input, thus strengthen PSRR and circuit stability.
It is an object of the invention to be achieved through the following technical solutions: a kind of band-gap reference electricity with high PSRR characteristic
Road, it includes band gap reference core circuit, reference voltage generating circuit and leakage path.
The DC supply input end of band gap reference core circuit, reference voltage generating circuit and leakage path is with DC source VDD even
Connecing, the first outfan of band gap reference core circuit is connected with the control input of reference voltage generating circuit, band-gap reference core
Second outfan of circuit is connected with the control input of leakage path, the first outfan output reference of reference voltage generating circuit
Voltage VREF, the second outfan of reference voltage generating circuit, the outfan of leakage path and the 3rd of band gap reference core circuit the
Outfan all with dock.
Described leakage path is for reducing DC source VDD to band gap reference core circuit and the DC supply input of each branch road thereof
The interference of terminal voltage Vd, improves PSRR so that the voltage of the second output port of band gap reference core circuit will not be with
The change of external condition and change.
Described band gap reference core circuit includes NMOS tube NM3, NMOS tube NM4, resistance R3 and resistance R4.
Described band gap reference core circuit also includes PMOS PM1, PMOS PM2, audion PNP1, audion
PNP2 and resistance R1.
The grid of NMOS tube NM3, the grid of NMOS tube NM4, NMOS tube NM4 drain electrode equal by resistance R4
Being connected with the drain electrode of PMOS PM2, the drain electrode of NMOS tube NM4 is also with the second outfan of band gap reference core circuit even
Connecing, the source electrode of NMOS tube NM4 is connected with the emitter stage of audion PNP2.
The drain electrode of NMOS tube NM3 and the grid of PMOS PM1, the grid of PMOS PM2 and band-gap reference core
First outfan of circuit connects, and the drain electrode of NMOS tube NM3 is connected with the drain electrode of PMOS PM1 also by resistance R3,
The source electrode of NMOS tube NM3 is connected by the emitter stage of resistance R1 and audion PNP1.
The source electrode of PMOS PM1 and the source electrode of PMOS PM2 are all with the DC supply input end of band gap reference core circuit even
Connect.
Audion PNP1, the colelctor electrode of audion PNP2 and base stage are all connected with the 3rd outfan of band gap reference core circuit.
Described reference voltage generating circuit includes PMOS PM3, audion PNP3 and resistance R2.
The source electrode of PMOS PM3 is connected with the DC supply input end of reference voltage generating circuit, the drain electrode of PMOS PM3
One end with reference voltage output end and resistance R2 is connected respectively, the grid of PMOS PM3 and reference voltage generating circuit
Control input connect, the other end of resistance R2 is connected with the emitter stage of audion PNP3, the colelctor electrode of audion PNP3 with
Base stage is all connected with the second outfan of reference voltage generating circuit.
Described leakage path includes PMOS PM4 and NMOS tube NM1.
The source electrode of PMOS PM4 is connected with the DC supply input end of leakage path, the drain electrode of PMOS PM4 respectively with
The drain and gate of NMOS tube NM1 connects, and the grid of PMOS PM4 is connected with the control input of leakage path,
The source electrode of NMOS tube NM1 is connected with the outfan of leakage path.
It also includes for reducing the DC source direct current to band gap reference core circuit, reference voltage generating circuit and leakage path
The interference of electrical input voltage Vd and the anti-jamming circuit of enhancing PSRR.
The DC supply input end of anti-jamming circuit is connected with DC source VDD, the outfan of anti-jamming circuit with dock.
Described anti-jamming circuit includes MOS capacitor NM2.
The grid of MOS capacitor NM2 is connected with the DC supply input end of anti-jamming circuit, the source electrode of MOS capacitor NM2
All it is connected with the outfan of anti-jamming circuit with drain electrode.
Described anti-jamming circuit includes capacity cell.One end of capacity cell is connected with the DC supply input end of anti-jamming circuit,
Its other end is connected with the outfan of anti-jamming circuit.
It also includes current circuit, and described current circuit is for increasing the direct current of DC source VDD and band gap reference core circuit
Resistance between electrical input, reduces the DC source VDD interference to DC supply input terminal voltage Vd, thus strengthens power supply and press down
System ratio and circuit stability.
The input of current circuit is connected with DC source VDD, and the outfan of current circuit is with electric with band-gap reference core respectively
The DC supply input end of road, operational amplification circuit, reference voltage generating circuit, leakage path and anti-jamming circuit connects.
Described current circuit includes the first current mirror, PMOS PM7 and the second current mirror, the input of the first current mirror with
The input of current circuit connects, the outfan of the first current mirror and the outfan of current circuit, the mirror image end of the first current mirror with
The mirror image end of the second current mirror connects, and the input of the second current mirror is connected with the drain electrode of PMOS PM7, PMOS PM7
The outfan of source electrode and current circuit, the grid of PMOS PM7 is connected with the first outfan of band gap reference core circuit.
Described current circuit includes the current source I of the Cascade structure being made up of PMOS PM5 and PMOS PM6.
The source electrode of PMOS PM5 is connected with the input of current circuit, the drain electrode of PMOS PM5 and PMOS PM6
Source electrode connect, the grid of PMOS PM5 is connected with the input of switch controlling signal Q, the grid of PMOS PM6
Being connected with the input of switch controlling signal Q ', the drain electrode of PMOS PM6 is connected with the outfan of current circuit.
The invention has the beneficial effects as follows:
1, in band-gap reference circuit, increase the leakage path being made up of PMOS PM4 and NMOS tube NM1, subtract
The interference that small power supply VDD brings.
2, in order to strengthen PSRR, the current source I in current circuit is realized by Cascade structure, increases unidirectional current
Source VDD to Vd arrives resistance, reduces the DC source interference to Vd, thus improves PSRR.
3, in order to strengthen PSRR, the power supply electric capacity to ground, the most anti-interference electricity are increased on the side of band-gap reference circuit
Road, utilizes the charge-discharge principle to electric capacity to reduce the power-supply fluctuation interference to band-gap reference circuit.
Accompanying drawing explanation
Fig. 1 is the structured flowchart that the present invention has the band-gap reference circuit of high PSRR characteristic；
Fig. 2 is one of circuit theory diagrams of band-gap reference circuit of the present invention；
Fig. 3 is the two of the circuit theory diagrams of band-gap reference circuit of the present invention
Fig. 4 is the PSRR simulation result comparison diagram of present configuration and traditional structure.
Detailed description of the invention
Technical scheme is described in further detail below in conjunction with the accompanying drawings, but protection scope of the present invention is not limited to following institute
State.
As it is shown in figure 1, a kind of band-gap reference circuit with high PSRR characteristic, it include band gap reference core circuit,
Reference voltage generating circuit, current circuit, leakage path and anti-jamming circuit.
Described leakage path is for reducing the DC source DC supply input terminal voltage to band gap reference core circuit and each branch road thereof
The interference of Vd and enhancing PSRR；Described anti-jamming circuit brings due to the fluctuation of DC source VDD for reducing
Interference, reduce the interference that brought of each branch current of band-gap reference circuit, improve the PSRR of band-gap reference circuit；Institute
The current circuit stated resistance between the DC supply input end increasing DC source VDD and band gap reference core circuit, subtracts
Few DC source VDD interference to DC supply input terminal voltage Vd, thus strengthen PSRR and circuit stability so that
The voltage of the second output port of band gap reference core circuit will not change with the change of external condition.
Wherein, the DC supply input end of band gap reference core circuit, reference voltage generating circuit, leakage path and anti-jamming circuit
All being connected with DC source VDD by current circuit, the first outfan of band gap reference core circuit produces electricity with reference voltage
The control input on road connects, and the second outfan of band gap reference core circuit is connected with the control input of leakage path, benchmark
First outfan output reference voltage V of voltage generation circuitREF, the second outfan of reference voltage generating circuit, leakage path
Outfan, the outfan of anti-jamming circuit and band gap reference core circuit the 3rd outfan all with dock.
(1) band gap reference core circuit
As it is shown on figure 3, described band gap reference core circuit includes NMOS tube NM3, NMOS tube NM4, resistance R3
With resistance R4, also include PMOS PM1, PMOS PM2, audion PNP1, audion PNP2 and resistance R1.
The grid of NMOS tube NM3, the grid of NMOS tube NM4, NMOS tube NM4 drain electrode equal by resistance R4
Be connected with the drain electrode of PMOS PM2, the drain electrode of NMOS tube NM4 also with the second outfan of band gap reference core circuit
Connecting, the source electrode of NMOS tube NM4 is connected with the emitter stage of audion PNP2.
The drain electrode of NMOS tube NM3 and the grid of PMOS PM1, the grid of PMOS PM2 and band-gap reference core
First outfan of circuit connects, and the drain electrode of NMOS tube NM3 is connected with the drain electrode of PMOS PM1 also by resistance R3,
The source electrode of NMOS tube NM3 is connected by the emitter stage of resistance R1 and audion PNP1.
The source electrode of PMOS PM1 and the source electrode of PMOS PM2 are all with the DC supply input end of band gap reference core circuit even
Connect.
Audion PNP1, the colelctor electrode of audion PNP2 and base stage are all connected with the 3rd outfan of band gap reference core circuit.
Reference voltage is not only influenced by temperature, but also is floated and effect of noise by supply voltage.PSRR is exactly
The ripple voltage frequency that supply voltage exists is when changing from low to high, little relative to mains voltage variations of reference output voltage change
Signal gain.Sometimes we can represent benchmark PSRR by equation below, and unit is dB:
In formula, VREFThe ac small signal variable quantity of reference voltage and supply voltage is represented respectively with VCC.Briefly, benchmark PSRR
Mean that the supply voltage small-signal gain to reference voltage.
In the present invention, the voltage of the X point shown in Fig. 3 and Y point is equal, i.e. the anti-phase input terminal voltage of operational amplifier OP1
The in-phase input end voltage Vy of Vx and operational amplifier OP1 is equal, and it meets formula calculated below:
VX=VR3+VBE1
VY=VBE2
In formula, VR3Pressure drop on-resistance R3；
VBE1Voltage between base stage and the transmitter of-audion PNP1；
VBE2Voltage between base stage and the transmitter of-audion PNP2.
It is hereby achieved that flow through the electric current of resistance R3, its computing formula is:
This electric current I1With PTAT, due to the width of PM1=N × PM3, PMOS PM1 and PMOS PM3
Long ratio is N:1, utilizes mirror image relationship can obtain flowing through the electric current on resistance R4, and its computing formula is:
I3=N × I1。
Therefore electric current I3Also with PTAT, i.e. there is positive temperature coefficient, now can obtain the reference voltage V of outputREF,
Its computing formula is:
VREF=R4×I3+VBE3。
In sum, can obtain:
As long as reasonably arrangingValue, it is possible to make reference voltage VREFThere is zero-temperature coefficient.
(2) reference voltage generating circuit
Described reference voltage generating circuit includes PMOS PM3, audion PNP3 and resistance R2.
The source electrode of PMOS PM3 is connected with the DC supply input end of reference voltage generating circuit, the drain electrode of PMOS PM3
One end with reference voltage output end and resistance R2 is connected respectively, the grid of PMOS PM3 and reference voltage generating circuit
Control input connect, the other end of resistance R2 is connected with the emitter stage of audion PNP3, the colelctor electrode of audion PNP3 with
Base stage is all connected with the second outfan of reference voltage generating circuit.
(3) leakage path
Described leakage path includes PMOS PM4 and NMOS tube NM1.
The source electrode of PMOS PM4 is connected with the DC supply input end of leakage path, the drain electrode of PMOS PM4 respectively with
The drain and gate of NMOS tube NM1 connects, and the grid of PMOS PM4 is connected with the control input of leakage path,
The source electrode of NMOS tube NM1 is connected with the outfan of leakage path.
Leakage path in band-gap reference circuit, it is possible to the voltage making the second output port of band gap reference core circuit will not be with
The change of external condition and change, it is possible to be not provided with PMOS PM4.
(4) anti-jamming circuit
Present invention additionally comprises for reducing DC source to band gap reference core circuit, reference voltage generating circuit and leakage path
The interference of DC supply input terminal voltage Vd and the anti-jamming circuit of enhancing PSRR.
The DC supply input end of anti-jamming circuit is connected with DC source VDD, the outfan of anti-jamming circuit with dock.
Described anti-jamming circuit can be made up of MOS capacitor NM2.
The grid of MOS capacitor NM2 is connected with the DC supply input end of anti-jamming circuit, the source electrode of MOS capacitor NM2
All it is connected with the outfan of anti-jamming circuit with drain electrode.
Described anti-jamming circuit also can be made up of capacity cell.One end of capacity cell and the DC supply input end of anti-jamming circuit
Connecting, its other end is connected with the outfan of anti-jamming circuit.
(5) current circuit
It also includes current circuit, and described current circuit is for increasing the direct current of DC source VDD and band gap reference core circuit
Resistance between electrical input, reduces the DC source VDD interference to DC supply input terminal voltage Vd, thus strengthens power supply and press down
System ratio and circuit stability.
The input of current circuit is connected with DC source VDD, and the outfan of current circuit is with electric with band-gap reference core respectively
The DC supply input end of road, operational amplification circuit, reference voltage generating circuit, leakage path and anti-jamming circuit connects.
As in figure 2 it is shown, described current circuit includes the first current mirror, PMOS PM7 and the second current mirror, the first electric current
The input of mirror is connected with the input of current circuit, the outfan of the first current mirror and the outfan of current circuit, the first electric current
The mirror image end of mirror and the mirror image end of the second current mirror connect, and the input of the second current mirror is connected with the drain electrode of PMOS PM7,
The source electrode of PMOS PM7 and the outfan of current circuit, the of the grid of PMOS PM7 and band gap reference core circuit
One outfan connects.
Wherein, the first current mirror be N:1, N be 5 or 6, the i.e. first current mirror be 5:1 or 6:1 output, the second current mirror is
1:1 exports, and the electric current of PMOS PM1 branch road is I, then PMOS PM2, PMOS PM3, PMOS PM7
The image current of each branch road is also I, the I of M times of the electric current of leakage path, and M value here is between 1～2.
As it is shown on figure 3, described current circuit includes the Cascade knot being made up of PMOS PM5 and PMOS PM6
The current source I of structure.
The source electrode of PMOS PM5 is connected with the input of current circuit, the drain electrode of PMOS PM5 and PMOS PM6
Source electrode connect, the grid of PMOS PM5 is connected with the input of switch controlling signal Q, the grid of PMOS PM6
Being connected with the input of switch controlling signal Q ', the drain electrode of PMOS PM6 is connected with the outfan of current circuit.
(6) experiment simulation
In band-gap reference circuit, the fluctuation of supply voltage VDD, exported reference voltage V can be causedREFFluctuation.Power supply
Rejection ratio is to weigh circuit to the parameter of the rejection ability of noise on power line.
1, in band-gap reference circuit, increase the leakage path being made up of PMOS PM4 and NMOS tube NM1, subtract
The interference that small power supply VDD brings.
2, in order to strengthen PSRR, the current source I in current circuit is realized by Cascade structure, increases unidirectional current
Source VDD to Vd arrives resistance, reduces the DC source interference to Vd, thus improves PSRR.
3, in order to strengthen PSRR, the power supply electric capacity to ground, the most anti-interference electricity are increased on the side of band-gap reference circuit
Road, utilizes the charge-discharge principle to electric capacity to reduce the power-supply fluctuation interference to band-gap reference circuit.
Assume: due to the fluctuation of supply voltage VDD, cause injection current source I's to be changed to Δ I.
MOS capacitor NM4 in anti-jamming circuit, makes the curent change Δ I of anti-jamming circuit by charge-discharge principle1。
PMOS PM4 in leakage path and NMOS tube NM1 make the curent change Δ I of this branch road2。
Now Δ I ≈ Δ I1+ΔI2, thus reduce the interference of other branch currents in band-gap reference circuit, effectively strengthen power supply
Rejection ratio.
As shown in Figure 4, Fig. 4 is the PSRR simulation result comparison diagram of traditional structure and present configuration.PSRR1 in figure
For the PSRR of traditional structure, PSRR2 is the PSRR of present configuration.When frequency is 100～104Between time,
PSRR1 approximates-17.5dB, PSRR2 and approximates-77.5dB, the PSRR of band-gap reference circuit proposed by the invention
The yield value of PSRR is much smaller than the yield value of the PSRR of traditional structure.Instant is 10 in frequency4～107Between time,
The growth trend of PSRR2 is relatively big, but PSRR2 is also much smaller than PSRR1.Therefore, the present invention can effectively reduce supply voltage
VDD is to reference voltage VREFSmall-signal gain, strengthen PSRR.
Claims (10)
1. a band-gap reference circuit with high PSRR characteristic, it is characterised in that: it includes band gap reference core circuit, reference voltage generating circuit and leakage path；
The DC supply input end of band gap reference core circuit, reference voltage generating circuit and leakage path is connected with DC source VDD, first outfan of band gap reference core circuit is connected with the control input of reference voltage generating circuit, second outfan of band gap reference core circuit is connected with the control input of leakage path, the first outfan output reference voltage V of reference voltage generating circuitREF, the 3rd outfan of the second outfan of reference voltage generating circuit, the outfan of leakage path and band gap reference core circuit all with dock；
Described leakage path is for reducing the DC source VDD interference to DC supply input terminal voltage Vd of band gap reference core circuit and each branch road thereof, improve PSRR so that the voltage of the second output port of band gap reference core circuit will not change with the change of external condition.
A kind of band-gap reference circuit with high PSRR characteristic the most according to claim 1, it is characterised in that: described band gap reference core circuit includes NMOS tube NM3, NMOS tube NM4, resistance R3 and resistance R4；
Described band gap reference core circuit also includes PMOS PM1, PMOS PM2, audion PNP1, audion PNP2 and resistance R1；
The grid of NMOS tube NM3, the grid of NMOS tube NM4, the drain electrode of NMOS tube NM4 are all connected with the drain electrode of PMOS PM2 by resistance R4, the drain electrode of NMOS tube NM4 is also connected with the second outfan of band gap reference core circuit, and the source electrode of NMOS tube NM4 is connected with the emitter stage of audion PNP2；
The drain electrode of NMOS tube NM3 is connected with the first outfan of the grid of PMOS PM1, the grid of PMOS PM2 and band gap reference core circuit, the drain electrode of NMOS tube NM3 is connected with the drain electrode of PMOS PM1 also by resistance R3, and the source electrode of NMOS tube NM3 is connected by the emitter stage of resistance R1 and audion PNP1；
The source electrode of PMOS PM1 and the source electrode of PMOS PM2 are all connected with the DC supply input end of band gap reference core circuit；
Audion PNP1, the colelctor electrode of audion PNP2 and base stage are all connected with the 3rd outfan of band gap reference core circuit.
A kind of band-gap reference circuit with high PSRR characteristic the most according to claim 1, it is characterised in that: described reference voltage generating circuit includes PMOS PM3, audion PNP3 and resistance R2；
The source electrode of PMOS PM3 is connected with the DC supply input end of reference voltage generating circuit, the drain electrode of PMOS PM3 one end with reference voltage output end and resistance R2 respectively is connected, the grid of PMOS PM3 is connected with the control input of reference voltage generating circuit, the other end of resistance R2 is connected with the emitter stage of audion PNP3, and the colelctor electrode of audion PNP3 and base stage are all connected with the second outfan of reference voltage generating circuit.
A kind of band-gap reference circuit with high PSRR characteristic the most according to claim 1, it is characterised in that: described leakage path includes PMOS PM4 and NMOS tube NM1；
The source electrode of PMOS PM4 is connected with the DC supply input end of leakage path, the drain electrode of PMOS PM4 is connected with the drain and gate of NMOS tube NM1 respectively, the grid of PMOS PM4 is connected with the control input of leakage path, and the source electrode of NMOS tube NM1 is connected with the outfan of leakage path.
A kind of band-gap reference circuit with high PSRR characteristic the most according to claim 1, it is characterised in that: it also includes for reducing DC source to the interference of DC supply input terminal voltage Vd of band gap reference core circuit, reference voltage generating circuit and leakage path and the anti-jamming circuit of enhancing PSRR；
The DC supply input end of anti-jamming circuit is connected with DC source VDD, the outfan of anti-jamming circuit with dock.
A kind of band-gap reference circuit with high PSRR characteristic the most according to claim 5, it is characterised in that: described anti-jamming circuit includes MOS capacitor NM2；
The grid of MOS capacitor NM2 is connected with the DC supply input end of anti-jamming circuit, and the source electrode of MOS capacitor NM2 and drain electrode are all connected with the outfan of anti-jamming circuit.
A kind of band-gap reference circuit with high PSRR characteristic the most according to claim 5, it is characterised in that: described anti-jamming circuit includes capacity cell；One end of capacity cell is connected with the DC supply input end of anti-jamming circuit, and its other end is connected with the outfan of anti-jamming circuit.
A kind of band-gap reference circuit with high PSRR characteristic, it is characterized in that: it also includes current circuit, described current circuit resistance between the DC supply input end increasing DC source VDD and band gap reference core circuit, reduce the DC source VDD interference to DC supply input terminal voltage Vd, thus strengthen PSRR and circuit stability；
The input of current circuit is connected with DC source VDD, and the outfan of current circuit is connected with DC supply input end with band gap reference core circuit, operational amplification circuit, reference voltage generating circuit, leakage path and anti-jamming circuit respectively.
A kind of band-gap reference circuit with high PSRR characteristic the most according to claim 8, it is characterized in that: described current circuit includes the first current mirror, PMOS PM7 and the second current mirror, the input of the first current mirror is connected with the input of current circuit, the outfan of the first current mirror and the outfan of current circuit, the mirror image end of the first current mirror and the mirror image end of the second current mirror connect, the input of the second current mirror is connected with the drain electrode of PMOS PM7, the source electrode of PMOS PM7 and the outfan of current circuit, the grid of PMOS PM7 is connected with the first outfan of band gap reference core circuit.
A kind of band-gap reference circuit with high PSRR characteristic the most according to claim 8, it is characterised in that: described current circuit includes the current source I of the Cascade structure being made up of PMOS PM5 and PMOS PM6；
The source electrode of PMOS PM5 is connected with the input of current circuit, the drain electrode of PMOS PM5 is connected with the source electrode of PMOS PM6, the grid of PMOS PM5 is connected with the input of switch controlling signal Q, the grid of PMOS PM6 is connected with the input of switch controlling signal Q, and the drain electrode of PMOS PM6 is connected with the outfan of current circuit.
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| CN203720695U (en) * | 2013-12-30 | 2014-07-16 | 天津大学 | Band-gap reference resisting single event effect |
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| CN102096435A (en) * | 2010-12-31 | 2011-06-15 | 上海集成电路研发中心有限公司 | Improved band-gap reference voltage source and band-gap reference voltage generating circuit |
| CN203720695U (en) * | 2013-12-30 | 2014-07-16 | 天津大学 | Band-gap reference resisting single event effect |
| CN103955250A (en) * | 2014-03-18 | 2014-07-30 | 尚睿微电子（上海）有限公司 | Bandgap reference circuit with high power supply rejection ratio |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107450647B (en) * | 2017-08-30 | 2018-10-30 | 苏州纳芯微电子股份有限公司 | The integrated circuit and its method of bandgap voltage reference temperature drift are calibrated using self-heating |
| CN107450647A (en) * | 2017-08-30 | 2017-12-08 | 苏州纳芯微电子股份有限公司 | Utilize the integrated circuit and its method of self-heating calibration bandgap voltage reference temperature drift |
| CN107783586B (en) * | 2017-11-10 | 2022-12-20 | 佛山科学技术学院 | Voltage reference source circuit without bipolar transistor |
| CN107783586A (en) * | 2017-11-10 | 2018-03-09 | 佛山科学技术学院 | A kind of voltage reference source circuit of no bipolar transistor |
| CN109445507A (en) * | 2018-11-23 | 2019-03-08 | 天津三源兴泰微电子技术有限公司 | The band-gap reference circuit of high PSRR in a kind of broadband |
| CN109445507B (en) * | 2018-11-23 | 2023-12-22 | 天津三源兴泰微电子技术有限公司 | Band-gap reference circuit with high power supply rejection ratio in wide frequency |
| CN112835404A (en) * | 2020-12-31 | 2021-05-25 | 上海艾为电子技术股份有限公司 | Band gap reference circuit and electronic equipment |
| CN112835404B (en) * | 2020-12-31 | 2022-07-19 | 上海艾为电子技术股份有限公司 | Band gap reference circuit and electronic equipment |
| WO2023020626A1 (en) * | 2021-08-20 | 2023-02-23 | 广州慧智微电子股份有限公司 | Band-gap reference source circuit and electronic device |
| CN114253332A (en) * | 2021-12-16 | 2022-03-29 | 上海华虹宏力半导体制造有限公司 | Anti-interference band-gap reference source circuit |
| CN114253332B (en) * | 2021-12-16 | 2023-03-07 | 上海华虹宏力半导体制造有限公司 | Anti-interference band-gap reference source circuit |
| CN114356018A (en) * | 2021-12-31 | 2022-04-15 | 京微齐力(北京)科技有限公司 | Band-gap reference source circuit capable of switching conventional mode and low-voltage mode |
| CN114115424A (en) * | 2021-12-31 | 2022-03-01 | 京微齐力(北京)科技有限公司 | Band-gap reference source circuit with low-voltage structure |
| CN115167600A (en) * | 2022-07-29 | 2022-10-11 | 西安微电子技术研究所 | Low dropout regulator circuit capable of resisting transient overshoot of output voltage |
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Application publication date: 20161123 |