CN115390613A - Band gap reference voltage source - Google Patents
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- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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Abstract
The invention discloses a band-gap reference voltage source, which relates to the technical field of analog integrated circuits and comprises a starting circuit, a power supply rejection ratio enhancing circuit and a band-gap reference voltage generating circuit with high-order temperature compensation, wherein the starting circuit starts the other two circuits when being electrified and is separated from the band-gap reference voltage generating circuit with the high-order temperature compensation after the starting is finished; the power supply rejection ratio enhancement circuit generates a working voltage of a high-order temperature-compensated band-gap reference voltage generation circuit according to the voltage output by the starting circuit; the band-gap reference voltage generating circuit with the higher-order temperature compensation outputs the weighted sum of the nonlinear negative temperature coefficient voltage and the positive temperature coefficient voltage as the reference voltage with the higher-order temperature compensation. The invention introduces the triode with the nonlinear positive temperature coefficient beta, reduces the temperature drift coefficient of the band gap reference voltage source, realizes the high-order temperature compensation of the band gap reference voltage source, improves the precision of the band gap reference voltage source and has wider application range.
Description
Technical Field
The invention relates to the technical field of analog integrated circuits, in particular to a band-gap reference voltage source.
Background
The bandgap reference source is a core module of an integrated circuit, and functions to generate a stable voltage output to provide a dc reference voltage for a system, and is widely used in data converters, digital memories, switching power supplies, and linear voltage regulators. The voltage has effects on the voltage gain, noise and overall system performance of the circuitThere is a significant impact, and therefore, it becomes especially important to design a bandgap reference source with good performance. A conventional bandgap reference voltage source circuit diagram, as shown in FIG. 1, utilizes the base-emitter voltage (V) of Q1 BE1 ) To generate negative temperature coefficient voltage, difference value (delta V) of base-emitter voltages of two PNP triodes Q1 and Q2 BE ) To generate positive temperature coefficient voltage, and add with proper weight to obtain the reference voltage with zero temperature coefficient. Wherein, tripolar Q1 and Q2 pipe parallel connection number ratio is 1: n, resistance R 1 And R 2 The resistance ratio of (1): 1, the expression of the current I is:
thereby obtaining the output voltage V of the band-gap reference source REF Comprises the following steps:
wherein the base-emitter voltage V for the triode BE Every 1 ℃ rise in temperature, V BE Will drop by about 1.5mv, exhibiting a non-linear negative temperature coefficient; and a thermal voltage V T = kT/q (k is Boltzmann constant and q is an electronic charge), V per 1 ℃ rise in temperature T Will rise by about 0.087mv, exhibiting a linear positive temperature coefficient. It can be seen that only the appropriate R is selected 3 And R 1 A zero temperature coefficient reference voltage can be obtained. FIG. 2 is a graph of a simulation result of the output voltage of the bandgap reference of the structure, and the temperature drift coefficient of the structure is generally 20 ppm/DEG C-100 ppm/DEG C, and only simple first-order temperature coefficient compensation can be performed, and the application range is small.
Disclosure of Invention
The invention aims to provide a band gap reference voltage source, which is used for solving the problems that the reference voltage source with zero completion coefficient in the prior art can only carry out simple first-order temperature coefficient compensation and has a small application range.
The invention solves the problems through the following technical scheme:
a band-gap reference voltage source comprises a starting circuit, a power supply rejection ratio enhancement circuit and a high-order temperature-compensated band-gap reference voltage generation circuit, wherein:
the starting circuit is used for starting the power supply rejection ratio enhancement circuit and the high-order temperature-compensated band-gap reference voltage generation circuit when the power supply is powered on, and is separated from the high-order temperature-compensated band-gap reference voltage generation circuit after the starting is finished;
the power supply rejection ratio enhancement circuit is used for generating a voltage AVDL according to the voltage output by the starting circuit, and the voltage AVDL provides a working voltage for the high-order temperature-compensated band-gap reference voltage generation circuit;
and the high-order temperature compensation band-gap reference voltage generating circuit is used for generating a nonlinear negative temperature coefficient voltage and a positive temperature coefficient voltage and outputting the weighted sum of the nonlinear negative temperature coefficient voltage and the positive temperature coefficient voltage as the high-order temperature compensation reference voltage.
The start-up circuit includes MOS pipe MP0, MOS pipe MP1, MOS pipe MP2, MOS pipe MN0 and MOS pipe MN1, supply voltage AVD is connected to MOS pipe MP 0's source electrode, and MOS pipe MP 0's grid and drain electrode are connected MOS pipe MP 1's source electrode, MOS pipe MP 1's grid and drain electrode are connected MOS pipe MP 2's source electrode, MOS pipe MP 2's grid and drain electrode are connected MOS pipe MN 0's grid and MOS pipe MN 1's drain electrode, MOS pipe MN 0's drain electrode are connected the first input of power supply rejection ratio reinforcing circuit, MOS pipe MN 1's grid connection power supply rejection ratio reinforcing circuit's second input, MOS pipe MN0 and MOS pipe MN 1's source electrode ground connection.
The power supply rejection ratio enhancing circuit comprises an MOS (metal oxide semiconductor) tube MP4, an MOS tube MP5, an MOS tube MP6, an MOS tube MP7, an MOS tube MN3, an MOS tube MN4, an MOS tube MN5, an MOS tube MN6 and a resistor R 1 The source electrode of the MOS tube MP4 and the source electrode of the MOS tube MP5 are connected with the power supply voltage AVD, the grid electrode and the drain electrode of the MOS tube MP4 are connected with the grid electrode of the MOS tube MP5, the drain electrode of the MOS tube MN3 and the drain electrode of the MOS tube MN0, and the grid electrode of the MOS tube MN3 is connected with the grid electrode and the drain electrode of the MOS tube MN4, the drain electrode of the MOS tube MP6 and the grid electrode of the MOS tube MN 1; the drain electrode of the MOS tube MP5 is connected with the source electrode of the MOS tube MP6, the drain electrode of the MOS tube MN5, the source electrode of the MOS tube MP7 and the grid electrode of the MOS tube MN6 and is charged towards the high-order temperature compensated band gap referenceThe voltage generating circuit provides working voltage; the drain electrode of the MOS transistor MP7 is connected with the drain electrode of the MOS transistor MN6, the grid electrode of the MOS transistor MP6 is connected with the first input end of the band-gap reference voltage generating circuit with the high-order temperature compensation, the grid electrode of the MOS transistor MP7 is connected with the second input end of the band-gap reference voltage generating circuit with the high-order temperature compensation, and the source electrode of the MOS transistor MN6 is connected with the grid electrode of the MOS transistor MN5 and the resistor R 1 The source electrode of the MOS transistor MN3, the source electrode of the MOS transistor MN4, the source electrode of the MOS transistor MN5 and the resistor R 1 The second terminal of (a) is grounded.
The band-gap reference voltage generating circuit with the high-order temperature compensation comprises a positive temperature current generating unit with the high-order compensation, a reference voltage output unit and a high-order negative temperature voltage generating unit, wherein:
the high-order compensation positive temperature current generation unit comprises an MOS tube MP8, an MOS tube MP9, an MOS tube MN7, an MOS tube MN8 and a resistor R 2 Resistance R 3 Resistance R 4 Triode Q1 and triode Q2, MOS pipe MP 8's source electrode and MOS pipe MP 9's source electrode are connected MOS pipe MP 5's drain electrode, MOS pipe MP 8's grid connection MOS pipe MP 9's grid and drain electrode, MOS pipe MN 8's drain electrode and MOS pipe MP 6's grid are connected to the first input of reference voltage output unit, MOS pipe MN 7's grid and drain electrode, MOS pipe MN 8's grid and MOS pipe MP 7's grid are connected to MOS pipe MP 8's drain electrode and triode Q1's projecting pole is connected to MOS pipe MN 7's source electrode, triode Q1's base connecting resistance R 2 The source electrode of the MOS transistor MN8 is connected with a resistor R 4 First terminal of (3), resistor R 4 The second end of the first diode is connected with the source electrode of a triode Q2, and the base electrode of the triode Q2 is connected with a resistor R 3 First terminal of (3), resistor R 2 Second terminal and resistor R 3 The second end of the triode Q1 is grounded, and the collector electrodes of the triode Q2 are grounded;
the reference voltage output unit comprises an MOS transistor MP10 and a resistor R 5 The source electrode of the MOS tube MP10 is connected with the drain electrode of the MOS tube MP5, the grid electrode of the MOS tube MP10 is connected with the grid electrode of the MOS tube MP6, and the drain electrode of the MOS tube MP10 is connected with the resistor R 5 And as the output terminal of the reference voltage output unit;
the high-order negative temperature voltage generation unit comprises a triode Q3The emitter of the tube Q3 is connected with the resistor R 5 The base and collector of the transistor Q3 are grounded.
Compared with the prior art, the invention has the following advantages and beneficial effects:
(1) The invention introduces the triode with the nonlinear positive temperature coefficient beta, effectively reduces the temperature drift coefficient of the band gap reference voltage source, realizes the high-order temperature compensation of the band gap reference voltage source, thereby greatly improving the precision of the band gap reference voltage source and having wider application range.
(2) The invention has relatively simple structure, reduces the increase of the chip area, has low power consumption and is suitable for the low-power consumption band-gap reference circuit.
(3) The invention obviously improves the power supply rejection ratio of the band-gap reference voltage.
Drawings
FIG. 1 is a circuit diagram of a bandgap reference voltage source of the prior art;
FIG. 2 is a graph of simulation results of the output voltage of FIG. 1;
FIG. 3 is a functional block diagram of the present invention;
FIG. 4 is a circuit diagram of the present invention;
FIG. 5 is a graph of the simulation result of the output voltage of FIG. 4;
wherein, 1-starting circuit; 2-power supply rejection ratio boost circuit; 3-a high-order compensated positive temperature current generating unit; 4-a reference voltage output unit; 5-high order negative temperature voltage generating unit.
Detailed Description
The present invention will be described in further detail with reference to examples, but the embodiments of the present invention are not limited thereto.
Example 1:
referring to fig. 3 and 4, a bandgap reference voltage source includes a start-up circuit 1, a power supply rejection ratio enhancement circuit 2, and a high-order temperature compensated bandgap reference voltage generation circuit, wherein:
the starting circuit 1 is used for starting the power supply rejection ratio enhancement circuit 2 and the high-order temperature compensation band-gap reference voltage generating circuit when being powered on, and is separated from the high-order temperature compensation band-gap reference voltage generating circuit after the starting is finished;
the power supply rejection ratio enhancing circuit 2 is used for generating a voltage AVDL according to the voltage output by the starting circuit 1, and the voltage AVDL provides a working voltage for the high-order temperature compensation band-gap reference voltage generating circuit;
and the high-order temperature compensation band-gap reference voltage generating circuit is used for generating a nonlinear negative temperature coefficient voltage and a positive temperature coefficient voltage and outputting the weighted sum of the nonlinear negative temperature coefficient voltage and the positive temperature coefficient voltage as the high-order temperature compensation reference voltage.
The starting circuit 1 comprises an MOS tube MP0, an MOS tube MP1, an MOS tube MP2, an MOS tube MN0 and an MOS tube MN1, the source electrode of the MOS tube MP0 is connected with a power supply voltage AVD, the grid electrode and the drain electrode of the MOS tube MP0 are connected with the source electrode of the MOS tube MP1, the grid electrode and the drain electrode of the MOS tube MP1 are connected with the source electrode of the MOS tube MP2, the grid electrode and the drain electrode of the MOS tube MP2 are connected with the grid electrode of the MOS tube MN0 and the drain electrode of the MOS tube MN1, the drain electrode of the MOS tube MN0 is connected with the first input end of the power supply rejection ratio enhancement circuit 2, the grid electrode of the MOS tube MN1 is connected with the second input end of the power supply rejection ratio enhancement circuit 2, and the source electrodes of the MOS tube MN0 and the MOS tube MN1 are grounded.
The start-up circuit 1 is used to drive the high-order temperature compensated bandgap reference voltage generating circuit out of the bias point of the zero current state at power-up. After the power voltage AVD is electrified, the MOS tube MP0, the MOS tube MP1 and the MOS tube MP2 start to have current, the MOS tube MN0 is conducted due to the increase of the grid voltage, the level of the drain end (namely a starting point) of the MOS tube MN0 is reduced, namely the grid voltages of the MOS tube MP4 and the MOS tube MP5 are reduced, the MOS tube MP4 is conducted and then the current is mirrored to the MOS tube MP5, and at the moment, the high-order temperature compensation band gap reference voltage generating circuit of the band gap reference starts to work normally. Meanwhile, the currents of the MOS tube MP4 and the MOS tube MP5 are injected into the MOS tube MN3 and the MOS tube MN4, so that the MOS tube MN1 is conducted, the gate voltage of the MOS tube MN0 is pulled down again, and the MOS tube is turned off, and the band-gap reference voltage generating circuit with high-order temperature compensation is separated from the starting circuit 1.
The power supply rejection ratio enhancing circuit 2 comprises an MOS (metal oxide semiconductor) tube MP4, an MOS tube MP5, an MOS tube MP6, an MOS tube MP7, an MOS tube MN3, an MOS tube MN4, an MOS tube MN5, an MOS tube MN6 and a resistor R 1 Said MOS transistorThe source electrode of the MP4 and the source electrode of the MOS tube MP5 are connected with the power supply voltage AVD, the grid electrode and the drain electrode of the MOS tube MP4 are connected with the grid electrode of the MOS tube MP5, the drain electrode of the MOS tube MN3 and the drain electrode of the MOS tube MN0, and the grid electrode of the MOS tube MN3 is connected with the grid electrode and the drain electrode of the MOS tube MN4, the drain electrode of the MOS tube MP6 and the grid electrode of the MOS tube MN 1; the drain electrode of the MOS transistor MP5 is connected with the source electrode of the MOS transistor MP6, the drain electrode of the MOS transistor MN5, the source electrode of the MOS transistor MP7 and the grid electrode of the MOS transistor MN6, and provides working voltage for the high-order temperature-compensated band-gap reference voltage generating circuit; the drain electrode of the MOS tube MP7 is connected with the drain electrode of the MOS tube MN6, the grid electrode of the MOS tube MP6 is connected with the first input end of the high-order temperature compensation band-gap reference voltage generating circuit, the grid electrode of the MOS tube MP7 is connected with the second input end of the high-order temperature compensation band-gap reference voltage generating circuit, and the source electrode of the MOS tube MN6 is connected with the grid electrode of the MOS tube MN5 and the resistor R 1 The source electrode of the MOS transistor MN3, the source electrode of the MOS transistor MN4, the source electrode of the MOS transistor MN5 and the resistor R 1 The second terminal of (a) is grounded.
The power supply rejection ratio enhancement circuit 2 is mainly used to improve the power supply rejection ratio of the reference voltage output by the bandgap reference voltage generation circuit for high-order temperature compensation. The MOS tube MP4, the MOS tube MP5, the MOS tube MP6, the MOS tube MN3 and the MOS tube MN4 are self-biased loops, when the MOS tube MN0 of the starting circuit 1 pulls down the grid voltage of the MOS tube MP4 and the grid voltage of the MOS tube MP5, the drain end of the MOS tube MP5 is conducted to generate a voltage AVDL, the voltage AVDL is used for providing a working voltage for the band-gap reference voltage generating circuit with high-order temperature compensation, the voltage AVDL has small change along with the power voltage AVD, the influence of power fluctuation on the reference voltage output by the band-gap reference voltage generating circuit with high-order temperature compensation is effectively reduced, and therefore the power supply rejection ratio PSRR of the band-gap reference voltage generating circuit with high-order temperature compensation is improved. The MOS transistor MN5, the MOS transistor MN6 and the MOS transistor MP7 form a negative feedback loop, on one hand, the negative feedback loop can help to stabilize the voltage AVDL, and on the other hand, the sum of impedances looking into a node Vb (a node between the drain electrode of the MOS transistor MP5 and the source electrode of the MOS transistor MP 6) is very small, so that the power supply rejection ratio PSRR is obviously enhanced again.
The high-order temperature compensated bandgap reference voltage generating circuit comprises a high-order compensated positive temperature current generating unit 3, a reference voltage output unit 4 and a high-order negative temperature voltage generating unit 5, wherein:
the positive temperature current generating unit 3 with high-order compensation comprises an MOS tube MP8, an MOS tube MP9, an MOS tube MN7, an MOS tube MN8 and a resistor R 2 And a resistor R 3 And a resistor R 4 Triode Q1 and triode Q2, MOS pipe MP 8's source electrode and MOS pipe MP 9's source electrode are connected MOS pipe MP 5's drain electrode, MOS pipe MP 8's grid connection MOS pipe MP 9's grid and drain electrode, MOS pipe MN 8's drain electrode and MOS pipe MP 6's grid are connected to the first input of reference voltage output unit 4, MOS pipe MN 7's grid and drain electrode, MOS pipe MN 8's grid and MOS pipe MP 7's grid are connected to MOS pipe MP 8's drain electrode and triode Q1's projecting pole is connected to MOS pipe MN 7's source electrode, triode Q1's base connecting resistance R 2 The source electrode of the MOS tube MN8 is connected with the resistor R 4 First terminal of (2), resistor R 4 The second end of the first diode is connected with the source electrode of a triode Q2, and the base electrode of the triode Q2 is connected with a resistor R 3 First terminal of (3), resistor R 2 Second terminal and resistor R 3 The second end of the triode Q1 is grounded, and the collector electrodes of the triode Q2 are grounded;
the reference voltage output unit 4 comprises an MOS transistor MP10 and a resistor R 5 The source electrode of the MOS tube MP10 is connected with the drain electrode of the MOS tube MP5, the grid electrode of the MOS tube MP10 is connected with the grid electrode of the MOS tube MP6, and the drain electrode of the MOS tube MP10 is connected with the resistor R 5 And as the output of the reference voltage output unit 4;
the high-order negative temperature voltage generating unit 5 comprises a triode Q3, and an emitting electrode of the triode Q3 is connected with the resistor R 5 The base and collector of transistor Q3 are grounded.
And the high-order temperature compensation band-gap reference voltage generating circuit is used for generating a zero temperature coefficient reference voltage subjected to high-order compensation. MOS transistor MP8 and MOS transistor MP9 are a pair of current mirrors, MOS transistor MN7, MOS transistor MN8, and resistor R 2 And a resistor R 3 Resistance R 4 The triode Q1 and the triode Q2 are current sources, the current sources and the current mirrors are mutually biased, the width-length ratios of the MOS tube MP8, the MOS tube MP9, the MOS tube MP10, the MOS tube MN7 and the MOS tube MN8 are adjusted, and a positive feedback loop with the loop gain smaller than 1 is formedThe circuit is made to operate stably and generate self-bias current. And make V x =V y And the mirror currents of the three branches are equal and are all I, namely I 1 =I 2 =I 3 = I, wherein I 1 Is the branch current of the MOS transistor MP8, I 2 Is the branch current of the MOS transistor MP9 3 Node voltage V for the branch current of MOSMP10 x 、V y Respectively as follows:
wherein, I B1 Is a base current, I, of a triode Q1 B2 Is a base current, V, of a triode Q2 BE1 Base-emitter voltage, V, of transistor Q1 BE2 Is the base-emitter voltage of transistor Q2. The compound is obtained by the following formulas (1) and (2):
set R in general 2 ：R 3 =1:1, Q1: q2=1: n and n are natural numbers. Therefore, the difference value delta V of the base electrode-emitter voltages of the triode Q1 and the triode Q2 can be obtained BE Comprises the following steps:
wherein, I S1 Is a saturation current of the triode Q1, I S2 Is a transistor Q2 saturation current.
According to the principle that the currents of the series circuits are equal, the following can be obtained:
wherein, I E1 For emitter current, I, of transistor Q1 E2 For the emitter current of the triode Q2, I C1 For the collector current, I, of the transistor Q1 C2 For the collector current, I, of the transistor Q2 B1 Is a base current, I, of a triode Q1 B2 Is base current, beta, of transistor Q2 1 Is a triode Q1 DC amplification factor, beta 2 Is a triode Q2 DC amplification factor, beta 1 、β 2 The parameter increases with increasing temperature, beta for every l DEG C 1 、β 2 The value is increased by about 0.5 to 1%, and the value is a nonlinear positive temperature coefficient. The binding formulae (5), (6), (7), (8) and (9) can be given as follows:
substituting equations (10) and (11) into equations (3) and (4) above yields the expression for current I:
as can be seen from the formula (12), beta with positive temperature coefficient is introduced into the current I 1 、β 2 A parameter that can be used to compensate for the higher order terms of the bandgap reference. Finally obtaining the band gap reference output voltage V REF The following were used:
substituting formula (12) into (13) can yield:
observing the above formula, it can be seen that the base-emitter voltage (V) of the transistor Q3 is first utilized BE3 ) To generate a nonlinear negative temperature coefficient voltage, the difference value delta V of the base-emitter voltages of two PNP triodes Q1 and Q2 BE （V T ln (n)) and beta 1 、β 2 The coefficient is used to generate positive temperature coefficient voltage which passes through linear positive temperature coefficient V T ln (n) multiplied by a non-linear positive temperature coefficient
The higher-order term of the temperature coefficient, i.e., the reason why the right half of the parabola shown in fig. 5 rises after reaching the lowest is obtained, so that the reference voltage with the higher-order temperature compensation is finally obtained.
Although the present invention has been described herein with reference to the illustrated embodiments thereof, which are intended to be preferred embodiments of the present invention, it is to be understood that the invention is not limited thereto, and that numerous other modifications and embodiments can be devised by those skilled in the art that will fall within the spirit and scope of the principles of this disclosure.
Claims (4)
1. A band-gap reference voltage source is characterized by comprising a starting circuit, a power supply rejection ratio enhancement circuit and a high-order temperature-compensated band-gap reference voltage generation circuit, wherein:
the starting circuit is used for starting the power supply rejection ratio enhancement circuit and the high-order temperature-compensated band-gap reference voltage generation circuit when the power supply is powered on, and is separated from the high-order temperature-compensated band-gap reference voltage generation circuit after the starting is finished;
the power supply rejection ratio enhancing circuit is used for generating voltage AVDL according to the voltage output by the starting circuit, and the voltage AVDL provides working voltage for the band gap reference voltage generating circuit with high-order temperature compensation;
and the high-order temperature compensation band-gap reference voltage generating circuit is used for generating a nonlinear negative temperature coefficient voltage and a positive temperature coefficient voltage and outputting the weighted sum of the nonlinear negative temperature coefficient voltage and the positive temperature coefficient voltage as the high-order temperature compensation reference voltage.
2. The bandgap reference voltage source according to claim 1, wherein the start-up circuit comprises a MOS transistor MP0, a MOS transistor MP1, a MOS transistor MP2, a MOS transistor MN0 and a MOS transistor MN1, the source of the MOS transistor MP0 is connected to the supply voltage AVD, the gate and the drain of the MOS transistor MP0 are connected to the source of the MOS transistor MP1, the gate and the drain of the MOS transistor MP1 are connected to the source of the MOS transistor MP2, the gate and the drain of the MOS transistor MP2 are connected to the gate of the MOS transistor MN0 and the drain of the MOS transistor MN1, the drain of the MOS transistor MN0 is connected to the first input terminal of the power supply rejection ratio enhancement circuit, the gate of the MOS transistor MN1 is connected to the second input terminal of the power supply rejection ratio enhancement circuit, and the sources of the MOS transistor MN0 and the MOS transistor MN1 are grounded.
3. The bandgap reference voltage source according to claim 2, wherein the power supply rejection ratio enhancement circuit comprises a MOS transistor MP4, a MOS transistor MP5, a MOS transistor MP6, a MOS transistor MP7, a MOS transistor MN3, a MOS transistor MN4, a MOS transistor MN5, a MOS transistor MN6, and a resistor R 1 The source electrode of the MOS tube MP4 and the source electrode of the MOS tube MP5 are connected with the power supply voltage AVD, the grid electrode and the drain electrode of the MOS tube MP4 are connected with the grid electrode of the MOS tube MP5, the drain electrode of the MOS tube MN3 and the drain electrode of the MOS tube MN0, and the grid electrode of the MOS tube MN3 is connected with the grid electrode and the drain electrode of the MOS tube MN4, the drain electrode of the MOS tube MP6 and the grid electrode of the MOS tube MN 1; the drain electrode of the MOS tube MP5 is connected with the source electrode of the MOS tube MP6, the drain electrode of the MOS tube MN5, the source electrode of the MOS tube MP7 and the grid electrode of the MOS tube MN6 and supplements the high-order temperatureThe compensated band gap reference voltage generating circuit provides working voltage; the drain electrode of the MOS tube MP7 is connected with the drain electrode of the MOS tube MN6, the grid electrode of the MOS tube MP6 is connected with the first input end of the high-order temperature compensation band-gap reference voltage generating circuit, the grid electrode of the MOS tube MP7 is connected with the second input end of the high-order temperature compensation band-gap reference voltage generating circuit, and the source electrode of the MOS tube MN6 is connected with the grid electrode of the MOS tube MN5 and the resistor R 1 The source electrode of the MOS transistor MN3, the source electrode of the MOS transistor MN4, the source electrode of the MOS transistor MN5 and the resistor R 1 The second terminal of (a) is grounded.
4. The bandgap reference voltage source according to claim 3, wherein the higher-order temperature-compensated bandgap reference voltage generating circuit comprises a higher-order compensated positive temperature current generating unit, a reference voltage output unit and a higher-order negative temperature voltage generating unit, wherein:
the high-order compensation positive temperature current generation unit comprises an MOS tube MP8, an MOS tube MP9, an MOS tube MN7, an MOS tube MN8 and a resistor R 2 And a resistor R 3 Resistance R 4 Triode Q1 and triode Q2, MOS pipe MP 8's source electrode and MOS pipe MP 9's source electrode are connected MOS pipe MP 5's drain electrode, MOS pipe MP 8's grid connection MOS pipe MP 9's grid and drain electrode, MOS pipe MN 8's drain electrode and MOS pipe MP 6's grid are connected to the first input of reference voltage output unit, MOS pipe MN 7's grid and drain electrode, MOS pipe MN 8's grid and MOS pipe MP 7's grid are connected to MOS pipe MP 8's drain electrode and triode Q1's projecting pole is connected to MOS pipe MN 7's source electrode, triode Q1's base connecting resistance R 2 The source electrode of the MOS tube MN8 is connected with the resistor R 4 First terminal of (3), resistor R 4 The second end of the first diode is connected with the source electrode of a triode Q2, and the base electrode of the triode Q2 is connected with a resistor R 3 First terminal of (2), resistor R 2 Second terminal and resistor R 3 The second end of the triode Q1 is grounded, and the collector electrodes of the triode Q2 are grounded;
the reference voltage output unit comprises an MOS transistor MP10 and a resistor R 5 The source electrode of the MOS tube MP10 is connected with the drain electrode of the MOS tube MP5, the grid electrode of the MOS tube MP10 is connected with the grid electrode of the MOS tube MP6, and the drain electrode of the MOS tube MP10 is connected with the resistor R 5 And as the output terminal of the reference voltage output unit;
the high-order negative temperature voltage generation unit comprises a triode Q3, and an emitting electrode of the triode Q3 is connected with the resistor R 5 The base and collector of transistor Q3 are grounded.
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