CN107390767A - A kind of full MOS voltage-references of wide temperature with temperature-compensating - Google Patents

A kind of full MOS voltage-references of wide temperature with temperature-compensating Download PDF

Info

Publication number
CN107390767A
CN107390767A CN201710650676.9A CN201710650676A CN107390767A CN 107390767 A CN107390767 A CN 107390767A CN 201710650676 A CN201710650676 A CN 201710650676A CN 107390767 A CN107390767 A CN 107390767A
Authority
CN
China
Prior art keywords
temperature
circuit
drain electrode
grid
compensation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201710650676.9A
Other languages
Chinese (zh)
Other versions
CN107390767B (en
Inventor
孙伟锋
田伟娜
陆扬扬
祝靖
陆生礼
时龙兴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Southeast University - Wuxi Institute Of Technology Integrated Circuits
Southeast University
Original Assignee
Southeast University - Wuxi Institute Of Technology Integrated Circuits
Southeast University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Southeast University - Wuxi Institute Of Technology Integrated Circuits, Southeast University filed Critical Southeast University - Wuxi Institute Of Technology Integrated Circuits
Priority to CN201710650676.9A priority Critical patent/CN107390767B/en
Publication of CN107390767A publication Critical patent/CN107390767A/en
Application granted granted Critical
Publication of CN107390767B publication Critical patent/CN107390767B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

The full MOS voltage-references of a kind of wide temperature with temperature-compensating, provided with start-up circuit, benchmark core circuit, the temperature-compensation circuit being made up of temperature sensing circuit, temperature logic open circuit and high/low temperature temperature-compensation circuit.Start-up circuit makes its normal work to benchmark core circuit Injection Current, single order temperature compensation principle of the benchmark core circuit based on threshold voltage and thermal voltage, produces electric current using CMOS-type Self-bias Current generation circuit and produces reference voltage V by active loadREFThe threshold voltage of temperature sensing circuit extraction MOS device carries out temperature detection, exported after temperature compensated logic open circuit progress logical process and give high/low temperature temperature-compensation circuit, high/low temperature temperature-compensation circuit, which is directed to, to be compensated to different operating temperature ranges and compensation result feedback is coupled in the reference voltage of benchmark core circuit output, realizes the full MOS voltage-references of low-temperature coefficient and high PSRR under wide temperature operating conditions.

Description

A kind of full MOS voltage-references of wide temperature with temperature-compensating
Technical field
The present invention relates to reference voltage source, the more particularly to a kind of full MOS voltage-references of wide temperature with temperature-compensating, Belong to power technique fields.
Background technology
With the continuous diminution of integrated circuit dimensions, while contained transistor is increasing in chip, and technique is more and more multiple Miscellaneous, IC industry is faced with new bottleneck and challenge.Process constantly reduces, and the voltage that device can be born is increasingly It is small, cause the operating voltage of integrated circuit more and more lower, thus it is adapted to the circuit of operating on low voltage just to cater to skill with rapid changepl. never-ending changes and improvements The update of art and product.The fast development of various wearable devices and portable set in recent years, it is desirable to circuit design to Low-voltage and low-power dissipation direction is developed.Reference circuit is a nucleus module essential in IC design, in digital-to-analogue conversion Extensive use in the analog circuits such as device, analog-digital converter, sensor, dynamic memory, flash memory or Digital Analog Hybrid Circuits.Benchmark Source is divided into current reference source and voltage-reference according to function, and other circuit structures provide the voltage of " standard " predominantly in system Or electric current.MOS voltage-references are compatible with various standard CMOS process, and full MOS benchmark are because of its low pressure, low-power consumption, low cost etc. Advantage, have wide range of applications.The performance quality of a reference source directly determines the stability of circuit system and the quality of indices. Most important power management is voltage stabilizing power supply, and the precision of full MOS benchmark is even more and concerned especially under extreme environment high temperature, low temperature System can normal work key.
Temperature drift coefficient is the important indicator of benchmark reference source precision and stability.Full MOS voltage-references are in wide temperature Operating accuracy in the range of degree often determines the quality of system output voltage, operating accuracy and temperature coefficient, PSRR It is relevant.Temperature coefficient is lower, and full MOS voltage-references are higher in the precision of wide temperature operation interval；PSRR is higher, base Quasi- output voltage is smaller by extraneous power supply disturbance, and precision is higher.For single order temperature-compensating full MOS voltage-references -55 DEG C~125 DEG C of operating temperature ranges in, temperature coefficient is typically up to 200~60ppm/ DEG C.In order to further reduce reference voltage The temperature coefficient in source must just carry out extra temperature-compensation circuit, will commonly use the temperature compensation of CMOS reference sources at present It is main to include second order curvature compensation technique, the compensation circuit based on integrated resistor temperature coefficient, weighted and mended based on gate-source voltage Repay technology, technique for temperature compensation based on digital circuit Schema control etc..
The content of the invention
The present invention provides a kind of full MOS voltage-references of wide temperature with high/low temperature temperature-compensation circuit, and it is a kind of The principle of temperature-compensating is carried out based on threshold voltage and thermal voltage, and temperature detection and height are carried out using V_th generation circuit Cryogenic temperature compensation circuit realizes the voltage-reference of low-temperature coefficient, high PSRR.Adopt the following technical scheme that：
A kind of full MOS voltage-references of wide temperature with temperature-compensating, it is characterised in that：Provided with start-up circuit, benchmark Core circuit and temperature-compensation circuit, temperature-compensation circuit are compensated using high/low temperature segmentation, including temperature sensing circuit, Temperature compensated logic open circuit and high/low temperature temperature-compensation circuit, start-up circuit are used to make to benchmark core circuit Injection Current Its normal work, single order temperature compensation principle of the benchmark core circuit based on threshold voltage and thermal voltage, using CMOS-type self-bias Put current generating circuit and produce electric current, and reference voltage V is produced by active loadREF, temperature sensing circuit is using extracting MOS The threshold voltage of device carries out Current Temperatures detection, after the temperature compensated logic open circuit of its testing result carries out logical process Export and give high/low temperature temperature-compensation circuit, high/low temperature temperature-compensation circuit to different operating temperature ranges for compensating simultaneously Compensation result feedback is coupled in the reference voltage of benchmark core circuit output, realizes low temperature system under wide temperature operating conditions The full MOS voltage-references of number and high PSRR；
Start-up circuit includes 3 metal-oxide-semiconductors：MS0, MS1 and MS2；MS0 source electrode connection VDD, MS0 grid and drain interconnection And connecting MS1 and MS2 grid, MS1 source electrode and drain interconnection are simultaneously connected ground, MS2 grounded drain；
Benchmark core circuit includes 14 metal-oxide-semiconductors：MP0、MP1、MP2、MP3、MP4、MN1、MN2、MN3、MN4、MN5、 MN6, MN7, MN18 and MN19；MP0, MP1, MP2, MP3 and MP4 source electrode and substrate are all connected with VDD, MP0, MP1, MP2, MP3 and MP4 grid is linked together and metal-oxide-semiconductor MS2 source electrode is connected in the drain electrode with MP0 and MN5 drain electrode and start-up circuit Together, the MP1 connection MN1 that drains drain electrode and MN5 grid, MP2 drain electrode connect MN2 drain and gate and with MN1's Grid connects, and MP3 drain electrode connection MN4 drain and gate simultaneously links together with the grid of MN3 grid and MN6, MP4's Drain electrode connection MN7 drain and gate is simultaneously connected with MN18 drain electrode, and MN5 source electrode connection MN6 drain electrode, MN1 source electrode connects MN3 drain electrode is connect, MN3, MN4, MN6 and MN7 source electrode and substrate are grounded, MN18 grid connection MP2 drain electrode, MN18's Source electrode connects MN19 grid and as the output end output reference voltage V of benchmark core circuitREF, MN19 source electrode and drain electrode Interconnect and connect ground；
Temperature-compensation circuit is used with point three sections of odd number segmented compensations risen, i.e. segments N=3,5,7 ..., including temperature Detect circuit, temperature compensated logic open circuit and high/low temperature temperature-compensation circuit, the output connection temperature of temperature sensing circuit Compensation logic open circuit, the output connection high/low temperature temperature-compensation circuit of temperature compensated logic open circuit, high/low temperature temperature Compensation circuit exports feedback link to the output end V of benchmark core circuitREF；Three sections of temperature-compensation circuit is divided to use temperature Detect circuit and connect temperature compensated logic open circuit one high and low temperature compensation circuit of reconnection；Five sections of temperature is divided to mend Repay circuit using temperature sensing circuit connect two temperature compensated logic open circuit high and low temperature compensation circuits in parallel, i.e., one Individual temperature compensated logic open circuit connect after a high and low temperature compensation circuit again with a temperature compensated logic open circuit One high and low temperature compensation circuit of connection is in parallel；Seven sections of temperature-compensation circuit is divided to connect three parallel connections using temperature sensing circuit Temperature compensated logic open circuit high and low temperature compensation circuit, i.e., connect a height in temperature compensated logic open circuit It is connected two high and low temperature compensation circuits parallel connections after low temperature compensation circuit with two temperature compensated logic open circuits again, then rises Higher leveled Segmented temperature compensation circuit structure by that analogy, each temperature compensated logic open circuit in the segmentation of each rank It is different to input threshold voltage；
Temperature sensing circuit includes 4 metal-oxide-semiconductors：MN16, MN17, MP8 and MP9；MP8 source electrode and MP9 source electrode connect Meet VDD, MP8 grid and MP9 gate interconnection and the source electrode for connecting metal-oxide-semiconductor MS2 in start-up circuit, MP8 drain electrode connect MN16 Drain and gate and the output end as temperature sensing circuit is connected with MN17 grid, MP9 drain electrode connection MN17 leakage Pole and MN16 source electrode, MN17 source ground；
Temperature compensated logic open circuit includes 4 metal-oxide-semiconductors：MP13, MP14, MN14 and MN15,4 phase inverters：NOT1、 NOT2, NOT3 and NOT4,1 nor gate NOR2；MP13 source electrode and MP14 source electrode are all connected with VDD, MP13 grid and MP14 Grid, MN14 grid and MN15 grid be connected together as temperature logic open circuit input and temperature examine The output end connection of slowdown monitoring circuit, MN14 substrates and source electrode and MN15 substrates and source grounding, MP14 drain electrode connection MN15 Drain electrode and phase inverter NOT1 input, MP13 drain electrode connection MN14 drain electrode and phase inverter NOT2 input, it is anti-phase Device NOT2 output end connection phase inverter NOT3 input, one of phase inverter NOT3 output end connection nor gate NOR2 are defeated Enter end, nor gate NOR2 another input connection phase inverter NOT1 output end, nor gate NOR2 output end connection is instead Phase device NOT4 input, phase inverter NOT4 output end are the output end of temperature logic open circuit；
High/low temperature temperature-compensation circuit includes 6 metal-oxide-semiconductors：MN8, MN9, MN10, MP5, MP6 and MN10；MP5 grid with MP6 gate interconnection and the source electrode for connecting metal-oxide-semiconductor MS2 in start-up circuit, MP5 source electrode and substrate and MP6 source-substrate are equal Connect VDD, MP5 drain electrode connection MP10 source electrode, MP10 drain electrode and the grid of MN9 grid and drain electrode and MN8 are connected to Together, MP10 grid connection MP6 drain electrode and MN10 drain electrode, MN8, MN9 and MN10 source electrode and substrate are grounded, The output end of MN10 grid connection temperature logic open circuit, MN8 drain electrode is as segmentation high/low temperature temperature-compensation circuit Output end, the output end V of feedback link to benchmark core circuitREF。
The input threshold voltage of the temperature compensated logic open circuit of each rank segmentation in the temperature-compensation circuit Difference determines as the following formula：
Because the input threshold voltage of temperature compensated logic open circuit is the input threshold voltage of phase inverter：
Wherein,The breadth length ratio of nmos device in phase inverter is represented, (W/L)MPRepresent anti-phase The breadth length ratio of PMOS device, V in deviceTHNFor the threshold voltage of nmos device, VTHPFor the threshold voltage of PMOS device.
MS0 in the start-up circuit connects into the form of diode, is operated in saturation region, MS1 source electrodes, drain electrode, substrate It is connected, is used equivalent to mos capacitance.
MN3 in the benchmark core circuit works in deep linear zone, and MN4, MN7 are operated in saturation region, and other pipes are equal It is operated in sub-threshold region.
MN16 in the temperature sensing circuit is operated in saturation region, and MN17 is operated in deep linear zone.
Advantages of the present invention and remarkable result：
(1) core circuit of the invention carries out the principle of temperature-compensating based on threshold voltage and thermal voltage, using CMOS-type Self-bias current source produces and μ VT 2Directly proportional electric current, and reference voltage is produced by active load, and by the voltage by dividing Section high-order temperature compensation circuit is coupled among final output reference voltage, so as to obtain low temperature under wide temperature operating conditions The full MOS voltage-references of coefficient.
(2) the CMOS-type Self-bias Current source structure that the present invention uses changes for what is carried out in traditional Self-bias Current source circuit Enter, the resistance in circuit is replaced with current-mirror structure (MN3, MN4), produces same μ VT 2Directly proportional current source, reduces resistance Influence of the temperature coefficient to circuit output voltage.
(3) present invention with the addition of feedback control loop on improved CMOS-type Self-bias Current source structure and carry out power supply suppression Than optimization, the matching of circuit is improved, power supply ripple in circuit is added and offsets path, circuit structure is simple, it is easy to accomplish, And low pass filter is employed, ensure the stability of circuit.
(4) the Segmented temperature compensation circuit that the present invention uses has used V_th generation circuit as temperature sensing circuit Current Temperatures are detected, not realize that the threshold voltage of V_th generation circuit extraction device is with temperature using digital periphery system The increase of degree and be gradually reduced, Current Temperatures can be known by detection threshold value magnitude of voltage, then by logic open circuit, entered The corresponding current branch of trip temperature compensation circuit is opened, and realizes the temperature-compensating under high temperature, low temperature, can be under wide temperature conditionss Work, and there is lower temperature coefficient.
(5) present invention can work in -55~125 DEG C of wide temperature ranges, have relatively low temperature coefficient and higher PSRR, realized using 0.18 μm of process simulation of chart, temperature coefficient is 18ppm/ DEG C.
Brief description of the drawings
Fig. 1 is the full MOS voltage reference source circuits structure chart of wide temperature of the present invention；
Fig. 2 is the Segmented temperature compensation circuit logic open circuit schematic diagram in circuit of the present invention；
Fig. 3 is the temperature sensing circuit schematic diagram in circuit of the present invention；
Fig. 4 is temperature detection circuit output result V in circuit of the present invention2Simulation waveform；
Fig. 5 is temperature-compensation circuit logic open circuit schematic diagram in circuit of the present invention；
High and low temperature compensation circuit schematic diagram in Fig. 6 circuits of the present invention；
High and low temperature compensation circuit work isoboles is segmented in Fig. 7 circuits of the present invention；
Fig. 8 is without segmentation high and low temperature compensation circuit temperature characterisitic analogous diagram in circuit of the present invention；
Fig. 9 is point each signal logic of three sections of temperature-compensation circuits and temperature characterisitic analogous diagram in circuit of the present invention；
Figure 10 is point each signal logic of five sections of temperature-compensation circuits and temperature characterisitic analogous diagram in circuit of the present invention.
Embodiment
Invention circuit is described in detail below in conjunction with the accompanying drawings.
The schematic diagram of the present invention is as shown in figure 1, including start-up circuit, benchmark core circuit and temperature-compensation circuit.Wherein, Temperature-compensation circuit is compensated using high/low temperature segmentation, including temperature sensing circuit, temperature logic open circuit and high/low temperature Temperature-compensation circuit.
Start-up circuit includes 3 metal-oxide-semiconductors：MS0, MS1 and MS2；MS0 source electrode connection VDD, MS0 grid and drain interconnection And connecting MS1 and MS2 grid, MS1 source electrode and drain interconnection are simultaneously connected ground, MS2 grounded drain, MS2 source electrode and base The drain electrode of the grid, MP0, MN5 of MP0, MP1, MP2, MP3, MP4 in quasi- core circuit links together, and is defined as G points.
The operation principle of start-up circuit is：MS0 connects into the form of diode, is operated in saturation region.MS1 source electrodes, drain electrode, Substrate is connected, and is used equivalent to mos capacitance.When electric on circuit, MS1 grid voltages are zero, MS2 gate-source voltages close to electricity Source voltage VDD.MS2 is on working condition, from it to Self-bias Current source generating circuit Injection Current, forces CMOS-type certainly Bias current sources slowly depart from degeneracy nought state, and electric current slowly increases to predetermined value.At the same time, supply voltage is to as MOS The MS1 that electric capacity uses slowly is charged, and MS2 grid voltage is gradually elevated, and gate-source voltage is gradually reduced, and start-up circuit is to master Body circuit conveying current value is less and less, and when MS1 grid voltages are increased to close to VDD, MS2 gate-source voltages can not make MS2 reaches opening, and MS2 no longer conveys electric current to main body circuit, and start-up circuit separates with main body circuit.The circuit relative to For other start-up circuits, small power consumption, need rationally to set breadth length ratio among the design process of start-up circuit, and ensure to work as circuit After normal work, without extracurrent on start-up circuit, avoid producing excessive power consumption.
Benchmark core circuit includes 14 metal-oxide-semiconductors：MP0、MP1、MP2、MP3、MP4、MN1、MN2、MN3、MN4、MN5、 MN6、MN7、MN18、MN19.MP0, MP1, MP2, MP3, MP4 source electrode and substrate are all connected to VDD, MP0, MP1, MP2, MP3, MP4 Grid link together, referred to as G points, and being connected with MP0 drain electrode.MP1 drain electrode connection MN1 drain electrode, MP2 drain electrode MN2 drain electrode is connected, MP1 is connected with MP2 grid, and is connected with MN2 drain electrode.The drain electrode phase of MN1 source electrode and MN3 Connection, MN2 source electrode are connected to ground, and MN1 grid is connected with MN2 grid is connected in V1.MP3 drain electrode and MN4 drain electrode phase Connection, MN3, MN4 and MN6 grid connect, are connected with MN4 drain electrode, and MN3, MN4 and MN6 source electrode and substrate are all connected to Ground.MN6 drain electrode connects with MN5 source electrode, and MN5 grid is connected with MN1 drain electrode, MN5 drain electrode connection G points.MN4's Drain electrode is connected with MN7 grid leak pole, MN7 grid leak extremely reference voltage output end VREF0.MN18 grid and MN1 and MN2 Grid V1It is connected, MN18 drain electrode and VREF0It is connected, MN18 source electrode is connected with MN19 grid exports VREF。
The operation principle of benchmark core circuit is：After circuit start, MN3 works in deep linear zone, and MN4, MN7 are operated in full And area, other pipes are operated in sub-threshold region, reduce branch current.
The electric current of MN3 mirror image MN4 branch roads, flows through MN3 and MN4 current relationship, can set IDS4=NIDS3=Ibias, IDS4For MN4 branch currents, N be replicate MN4 branch currents multiple, IDS3For MN3 branch currents, IbiasFor electric current source generating circuit Electric current.VGS3For MN3 gate-source voltage, VGS4For MN4 gate-source voltage, and MN3 and MN4 gate-source voltage is equal, has VGS3=VGS4, the I-V characteristic curve according to MOS device can be obtained, MN3, MN4 branch current expression formula can be written as
Wherein μ represents the mobility of carrier, (W/L)3、(W/L)4MN3 and MN4 breadth length ratio is represented, L refers to having for NMOS Imitate length.VDS3For MN3 drain-source voltage, VTHFor the threshold voltage of MOS device.
MN1 and MN2 is operated in sub-threshold region, and VGS1+VDS3=VGS2, the electric current that can must flow through MN1, MN2 is respectively：
Wherein, η is sub-threshold slope, VTFor thermal voltage.VGS1、VGS2Respectively MN1 and MN2 gate-source voltage is poor.(W/ L)1、(W/L)2Represent MN1 and MN2 breadth length ratio.
V can be obtainedGS1And VGS2Expression formula it is as follows：
Wherein, IDS1And IDS2The respectively electric current of MN1 and MN2 branch roads.
By formula MN3 and MN4 current expression, V can be obtainedDS3Expression formula be：
By VDS3Expression formula bring Formulas I intoDS4=NIDS3=IbiasWithIt can obtain：
MP4 and MP1 composition PMOS current mirrors, accurate replica bias electric current, MN7 are operated in saturation region and obtain having conversely Two parameters of temperature coefficient compensate caused full MOS voltage-references.Adjustment circuit branch current and breadth length ratio make MP1 ~MP4 is operated in sub-threshold region, and MN7 is operated in strong inversion region.MP4 replicates the electric current of MP1 branch roads, and it is M to replicate multiple, defeated Go out the voltage V at endREFFor：
The current expression of Self-bias Current generation circuit is brought into, output voltage V can be obtainedREFExpression formula is：
By VREFExpression formula can obtain to temperature derivation：
Wherein,
From above analyzing, when only considering single order temperature coefficient, VTHIt is gradually reduced with the increase of temperature, VTWith temperature Increase and gradually increase.After circuital current and operating voltage determine, i.e., the reproduction ratio M and MN3, MN4 of reasonable adjusting electric current, MN7, MN1, MN2 breadth length ratio, the magnitude of voltage unrelated with temperature coefficient can be obtained.
MN5, MN6, MP0 composition negative feedback loop in benchmark core circuit, backfeed loop is also the counteracting of power supply ripple Path, the PSRR of circuit is improved, in order to improve the frequency stability of circuit, introduce low pass filter in circuit (MN19 source electrodes, drain electrode, which connect with substrate as electric capacity, to be used, and MN18 is operated in linear zone and used as resistance) is very necessary.Base Quasi- core circuit is first compensation phase, and temperature coefficient is still very big in -55~125 DEG C of operating temperature ranges, in order to reduce entirety The temperature coefficient of circuit, adds temperature-compensation circuit.
Temperature-compensation circuit schematic diagram includes three parts：Temperature sensing circuit, temperature compensated logic open circuit and height Low temperature compensation circuit.As shown in Fig. 2 (a), circuit is using the temperature-compensation circuit of three sections of compensation, including temperature-compensating electricity Road, temperature compensated logic open circuit and high and low temperature compensation circuit.As shown in Fig. 2 (b), circuit is the temperature using five sections of compensation Compensation circuit is spent, circuit includes a temperature sensing circuit, two temperature compensated logic open circuits and two high/low temperatures in figure Degree compensation circuit, two temperature compensated logic open circuits of use and two high and low temperature compensation circuit structure all sames, two The input threshold voltage of individual temperature compensated logic open circuit is different.In temperature-compensation circuit using seven sections of compensation, including one Individual temperature sensing circuit, three temperature compensated logic open circuits and three high and low temperature compensation circuits, three temperature of use Compensation logic open circuit and three high and low temperature compensation circuit structure all sames, three temperature compensated logic open circuits it is defeated Enter threshold voltage difference.By that analogy, according to n (n is odd number) section temperature-compensation circuit, including a temperature detection electricity Road,Individual temperature compensated logic open circuit andIndividual high and low temperature compensation circuit.WhereinIndividual temperature compensated logic is opened Open circuit andThe structure all same of individual high and low temperature compensation circuit,The input threshold of individual temperature compensated logic open circuit Threshold voltage is different.
The input threshold voltage of temperature compensated logic open circuit is the input threshold voltage of phase inverter, true by below equation It is fixed：
WhereinThe breadth length ratio of nmos device in phase inverter is represented, (W/L)MPRepresent phase inverter The breadth length ratio of middle PMOS device, VTHNFor the threshold voltage of nmos device, VTHPFor the threshold voltage of PMOS device.
Such as Fig. 3, temperature sensing circuit includes 4 metal-oxide-semiconductors：MN16、MN17、MP8、MP9.MN17 source electrode is connected to ground, MN17 drain electrode is connected with MN16 source electrode, and MN16 and MN17 grid are connected to MN16 drain electrode, i.e. V2End.MN16 leakage Pole is connected with MP8 drain electrode, and MN17 drain electrode is connected with MN16 source electrode with MP9 drain electrode, and MP9 source electrode is connected to VDD, MN8 and MN9 grid is connected to G.
Temperature sensing circuit is not realized using digital periphery system, using V_th generation circuit, threshold value electricity The threshold voltage of pressure extraction circuit extraction is gradually reduced with the increase of temperature, can be known currently by detection threshold value magnitude of voltage Temperature, thus the present invention uses V_th generation circuit as temperature sensing circuit.Temperature sensing circuit operation principle is：By The MN16 for being operated in saturation region and the MN17 compositions for being operated in deep linear zone.MP8 branch currents are set to IrefIf MP9 branch currents For N ' times of MP8 branch roads, MP9 branch currents are N ' Iref, then it is that (N '+1) Iref, MN16 is operated in saturation that MN17, which flows through electric current, Area, MN17 are operated in deep linear zone, there is VGS17-VTH17<<VDS17, its current expression is：
(W/L)16The breadth length ratio of nmos device in phase inverter is represented, (W/L)17The width for representing PMOS device in phase inverter is long Than VGS16、VGS17Respectively MN16 and MN17 gate-source voltage, VDS17For MN17 drain-source voltage.
Its two-way current relationship and gate-source voltage formula can be written as：
VGS17=VDS17+VDS16
Wherein, VDS16For MN16 drain-source voltage.
Simultaneous above-mentioned formula, and solve quadratic equation and can draw V2Expression formula be：
When the current source of current reference source is certain, MN16, MN17 for setting breadth length ratio is definite values, then the Section 2 of formula It is approximately definite value.VGS17Threshold voltage and certain value V can be also written asoSum, i.e. V2=VGS17=VTH+Vo, then V2Temperature characterisitic Expression formula can be written as：
V can be drawnGS17It is identical with the slope of threshold voltage.Output result V2Simulation waveform it is as shown in Figure 4.
Such as Fig. 5, temperature compensated logic open circuit includes 4 metal-oxide-semiconductors, 4 phase inverters and 1 nor gate：MP13、 MP14, MN14, MN15, NOT1, NOT2, NOT3, NOT4 and NOR2.MP14 and MN15 grid be connected and with MN17 grid It is connected, i.e. V2It is connected, MP14 substrate and source electrode are connected to VDD, MN15 substrates and source electrode are connected to ground, MP14 and MN15 Drain electrode be connected with NOT1 input, NOT1 output end V30It is connected with NOR2 input.MP13 and MN14 grid Pole and V2It is connected, MP13 substrate and source electrode are connected to VDD, MN14 substrates and source electrode are connected to ground, MP13 and MN14 drain electrode It is connected, and is connected with NOT2 input.NOT2 output end is connected with NOT3 input, NOT3 output end with NOR2 input is connected.NOR2 output end is connected with NOT4 input, and NOT4 output end is V5。
Temperature compensated logic open circuit operation principle is：The output result of temperature sensing circuit is handled, by mould Plan level conversion is digital level, as the output V of temperature compensated logic open circuit5It is changed into 1 from 0, high and low temperature compensation circuit Start-up operation.When temperature is less than TLOr higher than THExport V5It can be 1 from 0 saltus step, open high and low temperature compensation circuit.
Such as Fig. 6, high/low temperature temperature-compensation circuit includes 6 metal-oxide-semiconductors：MN8、MN9、MN10、MP5、MP6、MN10.MP5、 MP6 grid is connected with MP0 grid G point, and source electrode is all connected to VDD.MP5 drain electrode is connected to MP10 source electrode, MP10's Drain electrode is connected with MN9 grid and drain electrode, and MN8 grid connects with MN9 grid, MN8 drain electrode and MN7 grid drain electrode It is connected.MP10 grid is connected with MN10 and MP6 drain electrode.MN10 source electrode is connected to ground.
High/low temperature temperature-compensation circuit operation principle is：The output V of temperature compensated logic open circuit5Control MN10's opens To open and turn off, MN10 conducting and shut-off control whether high and low temperature compensation circuit to benchmark core circuit provides electric current, Just it is whether to carry out temperature-compensating.In temperature range (TL, TH) in, temperature compensated logic open circuit output pin V5Output For low level, MN10 is not turned on, and temperature-compensation circuit does not work, shown in equivalent circuit such as Fig. 7 (a).Temperature range (- 25 DEG C, TL)(TH, 125 DEG C) in, temperature compensated logic open circuit output pin V5Output be high level, MN10 conductings, temperature-compensating Circuit is started working to benchmark core circuit Injection Current, temperature-compensation circuit, and temperature-compensating is carried out to reference output voltage, etc. Imitate shown in circuit such as Fig. 7 (b).
The operation principle of temperature-compensation circuit is：Each signal logic and benchmark not compensated using segmentation high and low temperature are defeated The simulation result for going out voltage variation with temperature is as shown in Figure 8.Temperature is divided into three sections of each signal logic of temperature-compensation circuit And simulation result is respectively such as Fig. 9 a), 9b) shown in, temperature is divided into five sections of each signal logic of temperature-compensation circuit and emulation is tied Fruit is respectively such as Figure 10 a), 10b) shown in.More to the segments in operating temperature section from the point of view of simulation result, high-order temperature is mended It is better to repay effect, temperature coefficient is lower.If in the case where quiescent current allows, countless segmentations are carried out to benchmark core circuit Compensation, the temperature coefficient of benchmark can reach zero-temperature coefficient.The segmentation that the application scenario being typically different uses is different, for relatively low The occasion of power consumption, using points three sections；If for the occasion of lower temperature coefficient, divide and take corresponding hop count to carry out temperature-compensating To meet index request.
Circuit is just upper electric, and all node voltages are zero, and start-up circuit makes its normal to benchmark core circuit Injection Current Work.After circuit normal work, start-up circuit separates with main body circuit.Benchmark core circuit is produced using single order temperature-compensating Reference voltage, then by temperature sensing circuit detection temperature scope, different operating temperature ranges is compensated, is coupled to In final output reference.

Claims (5)

  1. A kind of 1. full MOS voltage-references of wide temperature with temperature-compensating, it is characterised in that：Provided with start-up circuit, benchmark core Electrocardio road and temperature-compensation circuit, temperature-compensation circuit is compensated using high/low temperature segmentation, including temperature sensing circuit, temperature Compensation logic open circuit and high/low temperature temperature-compensation circuit are spent, start-up circuit is used to make it to benchmark core circuit Injection Current Normal work, single order temperature compensation principle of the benchmark core circuit based on threshold voltage and thermal voltage, using CMOS-type automatic biasing Current generating circuit produces electric current, and produces reference voltage V by active loadREF, temperature sensing circuit is using extracting MOS devices The threshold voltage of part carries out Current Temperatures detection, and the temperature compensated logic open circuit of its testing result carries out defeated after logical process Go out to give high/low temperature temperature-compensation circuit, high/low temperature temperature-compensation circuit for different operating temperature ranges is compensated and incite somebody to action Compensation result feedback is coupled in the reference voltage of benchmark core circuit output, realizes low-temperature coefficient under wide temperature operating conditions With the full MOS voltage-references of high PSRR；
    Start-up circuit includes 3 metal-oxide-semiconductors：MS0, MS1 and MS2；MS0 source electrode connection VDD, MS0 grid and drain interconnection and company Connect MS1 and MS2 grid, MS1 source electrode and drain interconnection are simultaneously connected ground, MS2 grounded drain；
    Benchmark core circuit includes 14 metal-oxide-semiconductors：MP0、MP1、MP2、MP3、MP4、MN1、MN2、MN3、MN4、MN5、MN6、 MN7, MN18 and MN19；MP0, MP1, MP2, MP3 and MP4 source electrode and substrate are all connected with VDD, MP0, MP1, MP2, MP3 and MP4 Grid link together and metal-oxide-semiconductor MS2 source electrode is connected to one in the drain electrode with MP0 and MN5 drain electrode and start-up circuit Rise, MP1 drain electrode connection MN1 drain electrode and MN5 grid, MP2 drain electrode connection MN2 drain and gate and with MN1 grid Pole connects, and MP3 drain electrode connection MN4 drain and gate simultaneously links together with the grid of MN3 grid and MN6, MP4 leakage Pole connection MN7 drain and gate is simultaneously connected with MN18 drain electrode, MN5 source electrode connection MN6 drain electrode, MN1 source electrode connection MN3 drain electrode, MN3, MN4, MN6 and MN7 source electrode and substrate are grounded, MN18 grid connection MP2 drain electrode, MN18 source Pole connects MN19 grid and as the output end output reference voltage V of benchmark core circuitREF, MN19 source electrode and drain electrode are mutual Connect and connect ground；
    Temperature-compensation circuit is used with point three sections of odd number segmented compensations risen, i.e. segments N=3,5,7 ..., including temperature detection Circuit, temperature compensated logic open circuit and high/low temperature temperature-compensation circuit, the output connection temperature-compensating of temperature sensing circuit Logic open circuit, the output connection high/low temperature temperature-compensation circuit of temperature compensated logic open circuit, high/low temperature temperature-compensating Circuit exports feedback link to the output end V of benchmark core circuitREF；Three sections of temperature-compensation circuit is divided to use temperature detection Circuit connects a temperature compensated logic open circuit and reconnects a high and low temperature compensation circuit；Divide five sections of temperature-compensating electricity Road connects two temperature compensated logic open circuit high and low temperature compensation circuits in parallel, i.e. a temperature using temperature sensing circuit Degree compensation logic open circuit is connected with a temperature compensated logic open circuit again after connecting a high and low temperature compensation circuit One high and low temperature compensation circuit is in parallel；Seven sections of temperature-compensation circuit is divided to connect three temperature in parallel using temperature sensing circuit Compensation logic open circuit high and low temperature compensation circuit is spent, i.e., connects a high/low temperature in a temperature compensated logic open circuit It is in parallel to be connected two high and low temperature compensation circuits after degree compensation circuit with two temperature compensated logic open circuits again, then raises one The Segmented temperature compensation circuit structure of level by that analogy, the input of each temperature compensated logic open circuit in the segmentation of each rank Threshold voltage is different.
    Temperature sensing circuit includes 4 metal-oxide-semiconductors：MN16, MN17, MP8 and MP9；MP8 source electrode and MP9 source electrode are all connected with VDD, MP8 grid and MP9 gate interconnection and the source electrode for connecting metal-oxide-semiconductor MS2 in start-up circuit, MP8 drain electrode connection MN16 leakage Pole and grid are simultaneously connected the output end as temperature sensing circuit with MN17 grid, MP9 drain electrode connection MN17 drain electrode and MN16 source electrode, MN17 source ground；
    Temperature compensated logic open circuit includes 4 metal-oxide-semiconductors：MP13, MP14, MN14 and MN15,4 phase inverters：NOT1、 NOT2, NOT3 and NOT4,1 nor gate NOR2；MP13 source electrode and MP14 source electrode are all connected with VDD, MP13 grid and MP14 Grid, MN14 grid and MN15 grid be connected together as temperature logic open circuit input and temperature examine The output end connection of slowdown monitoring circuit, MN14 substrates and source electrode and MN15 substrates and source grounding, MP14 drain electrode connection MN15 Drain electrode and phase inverter NOT1 input, MP13 drain electrode connection MN14 drain electrode and phase inverter NOT2 input, it is anti-phase Device NOT2 output end connection phase inverter NOT3 input, one of phase inverter NOT3 output end connection nor gate NOR2 are defeated Enter end, nor gate NOR2 another input connection phase inverter NOT1 output end, nor gate NOR2 output end connection is instead Phase device NOT4 input, phase inverter NOT4 output end are the output end of temperature logic open circuit；
    High/low temperature temperature-compensation circuit includes 6 metal-oxide-semiconductors：MN8, MN9, MN10, MP5, MP6 and MN10；MP5 grid and MP6 Gate interconnection and connect the source electrode of metal-oxide-semiconductor MS2 in start-up circuit, MP5 source electrode and substrate and MP6 source-substrate are all connected with VDD, MP5 drain electrode connection MP10 source electrode, MP10 drain electrode and MN9 grid and drain electrode and MN8 grid are connected to one Rise, MP10 grid connection MP6 drain electrode and MN10 drain electrode, MN8, MN9 and MN10 source electrode and substrate are grounded, MN10's Grid connects the output end of temperature logic open circuit, and MN8 drain electrode is as the output end for being segmented high/low temperature temperature-compensation circuit Feedback link to benchmark core circuit output end VREF。
  2. 2. the full MOS voltage-references of the wide temperature according to claim 1 with temperature-compensating, it is characterised in that：It is described The input threshold voltage difference of the temperature compensated logic open circuit of each rank segmentation in temperature-compensation circuit is true as the following formula It is fixed：
    Because the input threshold voltage of temperature compensated logic open circuit is the input threshold voltage of phase inverter：
    <mrow> <msub> <mi>V</mi> <mi>T</mi> </msub> <mo>=</mo> <mfrac> <mrow> <msub> <mi>V</mi> <mrow> <mi>T</mi> <mi>H</mi> <mi>N</mi> </mrow> </msub> <mo>+</mo> <msqrt> <mrow> <mn>1</mn> <mo>/</mo> <msub> <mi>k</mi> <mi>r</mi> </msub> </mrow> </msqrt> <mrow> <mo>(</mo> <msub> <mi>V</mi> <mrow> <mi>D</mi> <mi>D</mi> </mrow> </msub> <mo>+</mo> <msub> <mi>V</mi> <mrow> <mi>T</mi> <mi>H</mi> <mi>P</mi> </mrow> </msub> <mo>)</mo> </mrow> </mrow> <mrow> <mn>1</mn> <mo>+</mo> <msqrt> <mrow> <mn>1</mn> <mo>/</mo> <msub> <mi>k</mi> <mi>r</mi> </msub> </mrow> </msqrt> </mrow> </mfrac> </mrow>
    Wherein,What MN was represented is N-type MOS device, (W/L)MNThe breadth length ratio of nmos device in phase inverter is represented, What MP was represented is p-type MOS device, (W/L)MPRepresent the breadth length ratio of PMOS device in phase inverter, VTHNFor the threshold value electricity of nmos device Pressure, VTHPFor the threshold voltage of PMOS device.
  3. 3. the full MOS voltage-references of the wide temperature according to claim 1 with temperature-compensating, it is characterised in that：It is described MS0 in start-up circuit connects into the form of diode, is operated in saturation region, and MS1 source electrodes, drain electrode, substrate are connected, equivalent to Mos capacitance uses.
  4. 4. the full MOS voltage-references of the wide temperature according to claim 1 with temperature-compensating, it is characterised in that：It is described MN3 in benchmark core circuit works in deep linear zone, and MN4, MN7 are operated in saturation region, and other pipes are operated in subthreshold value Area.
  5. 5. the full MOS voltage-references of the wide temperature according to claim 1 with temperature-compensating, it is characterised in that：It is described MN16 in temperature sensing circuit is operated in saturation region, and MN17 is operated in deep linear zone.
CN201710650676.9A 2017-08-02 2017-08-02 A kind of full MOS voltage-references of wide temperature with temperature-compensating Active CN107390767B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710650676.9A CN107390767B (en) 2017-08-02 2017-08-02 A kind of full MOS voltage-references of wide temperature with temperature-compensating

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710650676.9A CN107390767B (en) 2017-08-02 2017-08-02 A kind of full MOS voltage-references of wide temperature with temperature-compensating

Publications (2)

Publication Number Publication Date
CN107390767A true CN107390767A (en) 2017-11-24
CN107390767B CN107390767B (en) 2018-08-17

Family

ID=60344185

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710650676.9A Active CN107390767B (en) 2017-08-02 2017-08-02 A kind of full MOS voltage-references of wide temperature with temperature-compensating

Country Status (1)

Country Link
CN (1) CN107390767B (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108445952A (en) * 2018-05-15 2018-08-24 徐亚芹 A kind of non-resistance reference voltage generating circuit applied in passive label
CN110048368A (en) * 2019-04-29 2019-07-23 中国电子科技集团公司第五十八研究所 A kind of high-speed, high precision under-voltage protecting circuit
CN111551878A (en) * 2020-05-25 2020-08-18 南京邮电大学 Hall sensor temperature drift compensation circuit
CN112994665A (en) * 2021-04-21 2021-06-18 成都铭科思微电子技术有限责任公司 CMOS delay circuit with temperature compensation
CN113985953A (en) * 2021-10-08 2022-01-28 西安电子科技大学 Non-band-gap reference source with over-temperature protection and soft start characteristics
CN114237340A (en) * 2021-12-27 2022-03-25 江苏润石科技有限公司 Segmented temperature compensation reference voltage source
CN114578890A (en) * 2022-03-10 2022-06-03 中国电子科技集团公司第五十八研究所 Reference voltage source circuit with piecewise linear compensation
CN115185331A (en) * 2022-07-15 2022-10-14 广州大学 Substrate diode current-based CMOS voltage reference source with wide temperature range
CN115390613A (en) * 2022-10-28 2022-11-25 成都市安比科技有限公司 Band gap reference voltage source
CN115632651A (en) * 2022-12-01 2023-01-20 苏州瑞铬优电子科技有限公司 Level conversion circuit without quiescent current

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060220633A1 (en) * 2005-03-31 2006-10-05 Hynix Semiconductor Inc. Internal voltage generating apparatus adaptive to temperature change
CN102411391A (en) * 2011-05-11 2012-04-11 东南大学 Complementary metal oxide semiconductor (CMOS) segmented high-order temperature compensated sub-threshold reference voltage source
CN102541133A (en) * 2011-05-11 2012-07-04 电子科技大学 Voltage reference source capable of compensation in full temperature range
CN106527559A (en) * 2016-12-28 2017-03-22 桂林电子科技大学 Low-voltage nanowatt-scale full CMOS current mode reference voltage source
CN106843358A (en) * 2017-03-21 2017-06-13 桂林电子科技大学 A kind of high PSRR whole CMOS reference voltage source

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060220633A1 (en) * 2005-03-31 2006-10-05 Hynix Semiconductor Inc. Internal voltage generating apparatus adaptive to temperature change
CN102411391A (en) * 2011-05-11 2012-04-11 东南大学 Complementary metal oxide semiconductor (CMOS) segmented high-order temperature compensated sub-threshold reference voltage source
CN102541133A (en) * 2011-05-11 2012-07-04 电子科技大学 Voltage reference source capable of compensation in full temperature range
CN106527559A (en) * 2016-12-28 2017-03-22 桂林电子科技大学 Low-voltage nanowatt-scale full CMOS current mode reference voltage source
CN106843358A (en) * 2017-03-21 2017-06-13 桂林电子科技大学 A kind of high PSRR whole CMOS reference voltage source

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108445952A (en) * 2018-05-15 2018-08-24 徐亚芹 A kind of non-resistance reference voltage generating circuit applied in passive label
CN110048368A (en) * 2019-04-29 2019-07-23 中国电子科技集团公司第五十八研究所 A kind of high-speed, high precision under-voltage protecting circuit
CN111551878A (en) * 2020-05-25 2020-08-18 南京邮电大学 Hall sensor temperature drift compensation circuit
CN111551878B (en) * 2020-05-25 2022-03-08 南京邮电大学 Hall sensor temperature drift compensation circuit
CN112994665A (en) * 2021-04-21 2021-06-18 成都铭科思微电子技术有限责任公司 CMOS delay circuit with temperature compensation
CN113985953A (en) * 2021-10-08 2022-01-28 西安电子科技大学 Non-band-gap reference source with over-temperature protection and soft start characteristics
CN114237340A (en) * 2021-12-27 2022-03-25 江苏润石科技有限公司 Segmented temperature compensation reference voltage source
CN114237340B (en) * 2021-12-27 2024-05-10 江苏润石科技有限公司 Segmented temperature compensated reference voltage source
CN114578890A (en) * 2022-03-10 2022-06-03 中国电子科技集团公司第五十八研究所 Reference voltage source circuit with piecewise linear compensation
CN114578890B (en) * 2022-03-10 2023-06-20 中国电子科技集团公司第五十八研究所 Reference voltage source circuit with piecewise linear compensation
CN115185331A (en) * 2022-07-15 2022-10-14 广州大学 Substrate diode current-based CMOS voltage reference source with wide temperature range
CN115390613A (en) * 2022-10-28 2022-11-25 成都市安比科技有限公司 Band gap reference voltage source
CN115390613B (en) * 2022-10-28 2023-01-03 成都市安比科技有限公司 Band-gap reference voltage source
CN115632651A (en) * 2022-12-01 2023-01-20 苏州瑞铬优电子科技有限公司 Level conversion circuit without quiescent current

Also Published As

Publication number Publication date
CN107390767B (en) 2018-08-17

Similar Documents

Publication Publication Date Title
CN107390767B (en) A kind of full MOS voltage-references of wide temperature with temperature-compensating
CN108803761B (en) LDO circuit that contains high-order temperature compensation
CN106959723B (en) A kind of bandgap voltage reference of wide input range high PSRR
CN107992156B (en) A kind of subthreshold value low-power consumption non-resistance formula reference circuit
CN108007594B (en) Temperature detection circuit and method
CN107340796B (en) A kind of non-resistance formula high-precision low-power consumption a reference source
CN103309392B (en) A kind of second-order temperature compensate without amplifier whole CMOS reference voltage source
CN104122931B (en) A kind of low pressure difference linear voltage regulator with high PSRR characteristic
CN108205353B (en) A kind of CMOS subthreshold value reference voltage source
CN103399611B (en) High-precision resistance-free band-gap reference voltage source
CN103869868B (en) Band-gap reference circuit with temperature compensation function
CN105867506B (en) A kind of LDO of embedded reference voltage
CN103389766B (en) Sub-threshold non-bandgap reference voltage source
CN109375688B (en) Sub-threshold reference voltage generation circuit with ultra-low power consumption, low voltage and low temperature drift
CN104156025B (en) A kind of high-order temperature compensated reference source
CN109710017B (en) Low-dropout linear voltage regulator system
CN101799699B (en) Reference source circuit with high power supply rejection ratio and low offset
CN104133519A (en) Low-voltage band-gap reference generating circuit applied to three-dimensional storage field
CN107168441A (en) A kind of band-gap reference circuit based on neutral net
CN103389772A (en) Band-gap reference voltage source with adjustable output voltage
CN106774572B (en) Miller-compensated circuit and electronic circuit
CN103246311B (en) Non-resistor band-gap reference voltage source with high-order curvature compensation
CN110502056A (en) A kind of threshold voltage reference circuit
CN109491432A (en) A kind of voltage reference circuit of ultralow pressure super low-power consumption
CN106155171A (en) The bandgap voltage reference circuit that linear temperature coefficient compensates

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant