CN103853228A - Reference voltage generating circuit - Google Patents
Reference voltage generating circuit Download PDFInfo
- Publication number
- CN103853228A CN103853228A CN201210525189.7A CN201210525189A CN103853228A CN 103853228 A CN103853228 A CN 103853228A CN 201210525189 A CN201210525189 A CN 201210525189A CN 103853228 A CN103853228 A CN 103853228A
- Authority
- CN
- China
- Prior art keywords
- generating circuit
- resistance
- pnp triode
- reference voltage
- pmos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Control Of Electrical Variables (AREA)
Abstract
The invention discloses a reference voltage generating circuit. The reference voltage generating circuit comprises a band-gap reference current generating circuit, wherein an NMOS (N-channel Metal Oxide Semiconductor) transistor adopting a diode connecting mode is connected between an output end of the band-gap reference current generating circuit and the ground or multiple NMOS transistors adopting the diode connecting mode are connected between the output end of the band-gap reference current generating circuit and the ground in series. The reference voltage generating circuit disclosed by the invention has the advantages that the output noise is lower, and the area of a chip can be saved.
Description
Technical field
The present invention relates to mixed-signal designs field, particularly relate to a kind of low noise reference circuit.
Background technology
Reference voltage is extensive application in mimic channel, and normally a fixing DC quantity, very little with supply voltage, technological parameter and temperature variation.The performance of reference voltage can have influence on a lot of aspects such as voltage gain, power supply inhibition and the noise of circuit.For example, in high-frequency inductor-capacitance voltage control oscillator (LC-VCO) design, just need high power supply inhibition, low noise reference voltage as direct current biasing.
Reference voltage reference source is all key modules in a lot of simulations and hybrid circuit.In the application of a lot of reference voltage reference sources, wish that reference voltage has very little noise, such as digital to analog converter, VCO(voltage controlled oscillator) bias voltage etc.One is improved noise ratio is to add electric capacity at conventional reference voltage output end compared with effective method.If high to output noise requirement, this electric capacity needs larger conventionally, is difficult to be integrated into chip internal, needs the device of chip exterior to realize.
The reference voltage that tradition is suitable for low supply voltage work adopts band-gap reference principle with reference to source generating circuit, utilizes reference voltage that a positive temperature coefficient (PTC) and negative temperature coefficient obtain zero-temperature coefficient with suitable weight addition as shown in Figure 1.In circuit, resistance R 2A=R2B=R2, the size of PMOS transistor M3, M4 and M5 is the same.Error operational amplifier A MP controls and makes the voltage of two input end N3 and N4 substantially equal.The grid of PMOS transistor M3, M4 and M5 is all connected to the output terminal of error operational amplifier A MP, and the transistorized electric current I 3 of described PMOS, I4 and I5 equate.The PN junction current-voltage correlation formula of bipolar transistor is:
, wherein, V
t=kT/q.Resistance R like this
1on voltage be
, N is the ratio of two transistor Q1 and Q2 emitter area,
with
respectively the base-emitter voltage of transistor Q1 and Q2.Therefore, the drain current I3 of PMOS transistor M3 equals to flow through resistance R 2A and the electric current sum that flows through resistance R 1:
the current mirror that electric current I 3 is formed by PMOS transistor M3, M4 and M5 flow into resistance R 3, obtains output reference voltage
(V
bEfor negative temperature coefficient, raise and reduce with temperature; V
tfor positive temperature coefficient (PTC), raise with temperature) can adjust Positive and Negative Coefficient Temperature with ratio or the N value of resistance R 1 by changing resistance R 2, this reference voltage is not varied with temperature substantially.The ratio of resistance R 3 and resistance R 2 can be used for adjusting the absolute value of reference voltage.
Traditional bandgap voltage reference has good temperature characterisitic conventionally, but the reference voltage that is suitable for low supply voltage work due to tradition is that reference current flows to resistance generation, resistance itself is all very large with the noise that other devices are folded to output terminal, reduces the most direct effective method of this noise and adds electric capacity at output terminal exactly.Be no matter other noises that KT/C based on resistance noise or device produce, all wish that this electric capacity is the bigger the better.But the large electric capacity of chip internal takies very large area, and electric capacity cannot filter the 1/f noise of metal-oxide-semiconductor.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of reference voltage generating circuit, has lower output noise, and can saving chip area.
For solving the problems of the technologies described above, reference voltage generating circuit of the present invention, comprising:
One band-gap reference current generating circuit is connected a nmos pass transistor that adopts diode connected mode between the output terminal of this band-gap reference current generating circuit and ground, or is connected in series the nmos pass transistor of multiple employing diode connected modes.
Reference voltage generating circuit of the present invention, reference current flows through the nmos pass transistor that multiple employing diodes that are connected in series connect connected mode, reduced the reference voltage noise corresponding with reference current noise, the thermonoise of multiple nmos pass transistors is also less than the equivalent output voltage noise that adopts output resistance simultaneously.
Compared with the Bandgap Reference Voltage Generation Circuit of the present invention and traditional employing band-gap reference principle, there is better noiseproof feature, and saving chip area; Can be applied under various technique, be particularly suitable at low noise, to applying in the less demanding low consumption circuit of temperature curve.
Accompanying drawing explanation
Below in conjunction with accompanying drawing and embodiment, the present invention is further detailed explanation:
Fig. 1 is traditional Bandgap Reference Voltage Generation Circuit schematic diagram;
Fig. 2 is low noise reference circuit one embodiment schematic diagram of the present invention.
Embodiment
Shown in Figure 2, described low noise reference circuit, in the following embodiments, comprising: a band-gap reference current generating circuit and the nmos pass transistor as two series connection of the employing diode connected mode of output load.
Band-gap reference current generating circuit, comprising: an error amplifier AMP, a N PNP triode Q1 in parallel, the 2nd PNP triode Q2, resistance R 1, R2A, R2B, the current mirror being made up of PMOS transistor M3～M5.
The source electrode of PMOS transistor M3～M5 is connected with supply voltage Vdd.The grid of PMOS transistor M3～M5 is connected with the output terminal of described error amplifier AMP.
The drain electrode of PMOS transistor M3 is connected with one end of resistance R 1 with one end of the positive input terminal of error amplifier AMP, resistance R 2A.The other end ground connection of resistance R 2A.The other end of resistance R 1 is connected with the emitter of a PNP triode Q1 of N parallel connection, the grounded collector of a N PNP triode Q1 in parallel.
The drain electrode of PMOS transistor M4 is connected with the emitter of the 2nd PNP triode Q2 with one end of the negative input end of error amplifier AMP, resistance R 2B.The grounded collector of the 2nd PNP triode Q2.N the base stage of a PNP triode Q1 and the base earth of the 2nd PNP triode Q2 in parallel.
The drain electrode of PMOS transistor M5 is as the output terminal of described band-gap reference current generating circuit, is connected between the drain electrode and ground of PMOS transistor M5 as the nmos pass transistor of two series connection of the employing diode connected mode of output load.Wherein, the grid of the first nmos pass transistor M1 is connected with the drain electrode of PMOS transistor M5 with drain electrode, the source ground of the second nmos pass transistor M2.
Comparison diagram 1 and Fig. 2 can find out, adopt the nmos pass transistor of two diodes connections as load in above-mentioned low noise reference circuit, replace the resistance in traditional structure.Described low noise reference circuit is the same with traditional structure, the current mirror that adopts error operational amplifier, triode, resistance and be made up of PMOS transistor obtains changing little reference current with temperature, supply voltage and process deviation, this reference current flows on the nmos pass transistor of diode connection of two series connection, forms equally output reference voltage.As long as rationally adjust the size of nmos pass transistor, just can obtain the reference voltage needing.Adopting the equivalent resistance of the nmos pass transistor of the mode of diode connection is 1/gm, and wherein, gm is the mutual conductance of nmos pass transistor M1 or M2.For same direct current output reference voltage, the equivalent resistance that two series diodes connect nmos pass transistors is 2/gm much smaller than corresponding resistance R 3 in traditional band-gap reference structure.Equivalent resistance is multiplied by output current noise and obtains output voltage noise.Hence one can see that, and described low noise reference circuit output voltage noise is 2/(gm*R3 with the ratio of traditional structure output voltage noise).If require lower output reference voltage, can only adopt a nmos pass transistor as load, adjust its size and obtain better noiseproof feature.Certainly, if the output reference voltage of having relatively high expectations can adopt more than two nmos pass transistors as load under the prerequisite that guarantees other transistor normal operating conditionss.
The noise of load in addition, " equivalent resistance " itself is also an output reference reference voltage noise part.Compared with traditional Bandgap Reference Voltage Generation Circuit, although the nmos pass transistor in described low noise reference circuit can be introduced some 1/f noises, thermonoise part has reduced a lot, and integrated noise on the whole is still better than traditional structure.
Reference voltage generating circuit is used in low consumption circuit, if employing resistance can be very large as its resistance of load.The output voltage that will obtain 1V such as, 1 μ A output current need to add the resistance of 1Mohm, need to take very large chip area, and described low noise reference circuit adopts nmos pass transistor very little as the shared chip area of load.Therefore, described low noise reference circuit can improve noise, again can saving chip area.Described low noise reference circuit is on not well compensation of the impact of temperature, and output voltage absolute value can change.
Traditional band-gap reference circuit and described low noise reference circuit are carried out to simulating, verifying.In the situation that all not adding the large electric capacity of output, in traditional structure, 1 μ A output current flows through the resistance of 1Mohm; In described low noise reference circuit, 1 μ A output current flows through two nmos pass transistors that two breadth length ratios are 2 μ m/2 μ m diodes connections, all obtains the reference voltage of 1V simultaneously.Structure of the present invention is than at least what a order of magnitude of noise of the output integral voltage of traditional structure, and chip area has also been saved a lot.
Although the present invention utilizes specific embodiment to describe, the explanation of embodiment is not limit the scope of the invention.One skilled in the art, by reference to explanation of the present invention, in the situation that not deviating from the spirit and scope of the present invention, easily carries out various modifications or can combine embodiment.
Claims (2)
1. a reference voltage generating circuit, comprise: a band-gap reference current generating circuit, it is characterized in that, between the output terminal of this band-gap reference current generating circuit and ground, be connected a nmos pass transistor that adopts diode connected mode, or be connected in series the nmos pass transistor of multiple employing diode connected modes.
2. reference voltage generating circuit as claimed in claim 1, it is characterized in that, described band-gap reference current generating circuit, comprise: an error amplifier, a N PNP triode in parallel, the 2nd PNP triode, the first resistance～three resistance, the current mirror being formed by a PMOS transistor～three PMOS transistor;
The transistorized source electrode of the one PMOS transistor～three PMOS is connected with supply voltage; The transistorized grid of the one PMOS transistor～three PMOS is connected with the output terminal of described error amplifier;
The transistorized drain electrode of the one PMOS is connected with one end of the first resistance with the positive input terminal of error amplifier, one end of the second resistance; The other end ground connection of the second resistance; The other end of the first resistance is connected with the emitter of a PNP triode of N parallel connection, the grounded collector of a N PNP triode in parallel;
The transistorized drain electrode of the 2nd PMOS is connected with the emitter of the 2nd PNP triode with the negative input end of error amplifier, one end of the 3rd resistance; The grounded collector of the 2nd PNP triode; N the base stage of a PNP triode and the base earth of the 2nd PNP triode in parallel;
The transistorized drain electrode of the 3rd PMOS is as the output terminal of described band-gap reference current generating circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210525189.7A CN103853228A (en) | 2012-12-07 | 2012-12-07 | Reference voltage generating circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210525189.7A CN103853228A (en) | 2012-12-07 | 2012-12-07 | Reference voltage generating circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103853228A true CN103853228A (en) | 2014-06-11 |
Family
ID=50861013
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210525189.7A Pending CN103853228A (en) | 2012-12-07 | 2012-12-07 | Reference voltage generating circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103853228A (en) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104133519A (en) * | 2014-07-30 | 2014-11-05 | 中国科学院微电子研究所 | Low-voltage band-gap reference generation circuit applied to three-dimensional storage field |
| CN106855732A (en) * | 2016-12-26 | 2017-06-16 | 中山大学 | A kind of super low-power consumption reference voltage source circuit system |
| CN107704013A (en) * | 2017-10-25 | 2018-02-16 | 丹阳恒芯电子有限公司 | A kind of whole CMOS reference circuit in Internet of Things |
| CN107748586A (en) * | 2017-10-25 | 2018-03-02 | 丹阳恒芯电子有限公司 | A kind of reference circuit structure in voltage-stabilizing system |
| CN107908219A (en) * | 2017-10-25 | 2018-04-13 | 丹阳恒芯电子有限公司 | A kind of LDO systems being applied in Internet of Things |
| CN107943196A (en) * | 2017-10-25 | 2018-04-20 | 丹阳恒芯电子有限公司 | Super low-power consumption whole CMOS reference circuit system |
| CN108562373A (en) * | 2018-04-24 | 2018-09-21 | 电子科技大学 | A kind of high-precision temperature sensor circuit |
| CN108572034A (en) * | 2018-04-24 | 2018-09-25 | 电子科技大学 | A kind of temperature sensor circuit of embedded clock |
| CN108693910A (en) * | 2017-04-11 | 2018-10-23 | 段遵虎 | A kind of programmable power supply including reference voltage circuit |
| CN112558679A (en) * | 2019-09-25 | 2021-03-26 | 圣邦微电子（北京）股份有限公司 | Current-limiting protection circuit |
| CN112783253A (en) * | 2020-12-31 | 2021-05-11 | 北京百瑞互联技术有限公司 | Ultra-low power consumption band gap reference voltage source circuit |
| CN114137294A (en) * | 2020-09-04 | 2022-03-04 | 长鑫存储技术有限公司 | Voltage detection circuit and charge pump circuit |
| CN114967831A (en) * | 2022-06-09 | 2022-08-30 | 深圳市聚芯影像有限公司 | Reference current source integrated circuit |
| CN115220519A (en) * | 2022-08-11 | 2022-10-21 | 思瑞浦微电子科技（苏州）股份有限公司 | Zener diode-based temperature compensation circuit and method |
| US11703527B2 (en) | 2020-09-04 | 2023-07-18 | Changxin Memory Technologies, Inc. | Voltage detection circuit and charge pump circuit |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1264067A (en) * | 1999-01-29 | 2000-08-23 | 三星电子株式会社 | Low-power reference voltage circuit |
| US20090066313A1 (en) * | 2007-09-07 | 2009-03-12 | Nec Electronics Corporation | Reference voltage circuit compensated for temprature non-linearity |
| CN201804292U (en) * | 2010-04-23 | 2011-04-20 | 比亚迪股份有限公司 | Reference voltage generating circuit |
| CN102053198A (en) * | 2009-10-28 | 2011-05-11 | 凹凸电子（武汉）有限公司 | Voltage detection circuit and method and electronic system |
| US20110248747A1 (en) * | 2010-04-08 | 2011-10-13 | Huang Chun-Jen | Zero-temperature-coefficient voltage or current generator |
| CN102279610A (en) * | 2011-04-13 | 2011-12-14 | 清华大学 | Sub-threshold reference voltage source with extremely low power consumption and wide temperature range |
| CN102354251A (en) * | 2011-08-24 | 2012-02-15 | 周继军 | Band-gap reference voltage circuit |
-
2012
- 2012-12-07 CN CN201210525189.7A patent/CN103853228A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1264067A (en) * | 1999-01-29 | 2000-08-23 | 三星电子株式会社 | Low-power reference voltage circuit |
| US20090066313A1 (en) * | 2007-09-07 | 2009-03-12 | Nec Electronics Corporation | Reference voltage circuit compensated for temprature non-linearity |
| CN102053198A (en) * | 2009-10-28 | 2011-05-11 | 凹凸电子（武汉）有限公司 | Voltage detection circuit and method and electronic system |
| US20110248747A1 (en) * | 2010-04-08 | 2011-10-13 | Huang Chun-Jen | Zero-temperature-coefficient voltage or current generator |
| CN201804292U (en) * | 2010-04-23 | 2011-04-20 | 比亚迪股份有限公司 | Reference voltage generating circuit |
| CN102279610A (en) * | 2011-04-13 | 2011-12-14 | 清华大学 | Sub-threshold reference voltage source with extremely low power consumption and wide temperature range |
| CN102354251A (en) * | 2011-08-24 | 2012-02-15 | 周继军 | Band-gap reference voltage circuit |
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104133519A (en) * | 2014-07-30 | 2014-11-05 | 中国科学院微电子研究所 | Low-voltage band-gap reference generation circuit applied to three-dimensional storage field |
| CN106855732A (en) * | 2016-12-26 | 2017-06-16 | 中山大学 | A kind of super low-power consumption reference voltage source circuit system |
| CN106855732B (en) * | 2016-12-26 | 2018-03-16 | 中山大学 | A kind of super low-power consumption reference voltage source circuit system |
| CN108693910A (en) * | 2017-04-11 | 2018-10-23 | 段遵虎 | A kind of programmable power supply including reference voltage circuit |
| CN107704013A (en) * | 2017-10-25 | 2018-02-16 | 丹阳恒芯电子有限公司 | A kind of whole CMOS reference circuit in Internet of Things |
| CN107748586A (en) * | 2017-10-25 | 2018-03-02 | 丹阳恒芯电子有限公司 | A kind of reference circuit structure in voltage-stabilizing system |
| CN107908219A (en) * | 2017-10-25 | 2018-04-13 | 丹阳恒芯电子有限公司 | A kind of LDO systems being applied in Internet of Things |
| CN107943196A (en) * | 2017-10-25 | 2018-04-20 | 丹阳恒芯电子有限公司 | Super low-power consumption whole CMOS reference circuit system |
| CN108572034A (en) * | 2018-04-24 | 2018-09-25 | 电子科技大学 | A kind of temperature sensor circuit of embedded clock |
| CN108562373A (en) * | 2018-04-24 | 2018-09-21 | 电子科技大学 | A kind of high-precision temperature sensor circuit |
| CN108572034B (en) * | 2018-04-24 | 2020-11-13 | 电子科技大学 | Temperature sensor circuit with built-in clock |
| CN112558679A (en) * | 2019-09-25 | 2021-03-26 | 圣邦微电子（北京）股份有限公司 | Current-limiting protection circuit |
| CN114137294A (en) * | 2020-09-04 | 2022-03-04 | 长鑫存储技术有限公司 | Voltage detection circuit and charge pump circuit |
| US11703527B2 (en) | 2020-09-04 | 2023-07-18 | Changxin Memory Technologies, Inc. | Voltage detection circuit and charge pump circuit |
| CN112783253A (en) * | 2020-12-31 | 2021-05-11 | 北京百瑞互联技术有限公司 | Ultra-low power consumption band gap reference voltage source circuit |
| CN114967831A (en) * | 2022-06-09 | 2022-08-30 | 深圳市聚芯影像有限公司 | Reference current source integrated circuit |
| CN114967831B (en) * | 2022-06-09 | 2023-06-02 | 深圳市聚芯影像有限公司 | Reference current source integrated circuit |
| CN115220519A (en) * | 2022-08-11 | 2022-10-21 | 思瑞浦微电子科技（苏州）股份有限公司 | Zener diode-based temperature compensation circuit and method |
| CN115220519B (en) * | 2022-08-11 | 2023-11-28 | 思瑞浦微电子科技（苏州）股份有限公司 | Temperature compensation circuit and method based on Zener diode |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103853228A (en) | Reference voltage generating circuit | |
| CN100514249C (en) | Band-gap reference source produce device | |
| CN102053645B (en) | Wide-input voltage high-power supply rejection ratio reference voltage source | |
| US9170595B2 (en) | Low power reference generator circuit | |
| CN106444949A (en) | Low-noise quick-start low-dropout linear regulator | |
| CN113608568B (en) | Low-power-consumption low-voltage low-temperature-drift band-gap reference voltage source | |
| WO2017087952A2 (en) | Bandgap reference circuit with curvature compensation | |
| US20140266413A1 (en) | Bandgap reference circuit | |
| CN108363447B (en) | Low-temperature coefficient full MOS type current source circuit with process compensation | |
| CN103677031A (en) | Method and circuit for providing zero-temperature coefficient voltage and zero-temperature coefficient current | |
| CN105425891A (en) | Zero-temperature coefficient adjustable voltage reference source | |
| CN101149628B (en) | Reference voltage source circuit | |
| CN203825520U (en) | Novel low-power-dissipation resistor-free type reference voltage generating circuit | |
| CN101276227A (en) | Reference current circuit | |
| US9448575B2 (en) | Bipolar transistor adjustable shunt regulator circuit | |
| CN115840486B (en) | Curvature compensation band gap reference circuit | |
| CN105630063A (en) | Reference power supply generating circuit | |
| US8742746B1 (en) | Ultra low-noise true sub-volt band gap | |
| CN112256078B (en) | Positive temperature coefficient current source and zero temperature coefficient current source | |
| CN214253044U (en) | Current source circuit and electronic equipment | |
| CN108279729A (en) | Start-up circuit for band-gap reference circuit | |
| CN205176717U (en) | Zero adjustable voltage reference source of temperature coefficient | |
| Hu et al. | Design of a high-performance brokaw band-gap reference | |
| CN112731998A (en) | Voltage reference circuit of ZTC operating point based on MOSFET | |
| CN104267774B (en) | A kind of linear power supply |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140611 |
|
| WD01 | Invention patent application deemed withdrawn after publication |