CN103677031A - Method and circuit for providing zero-temperature coefficient voltage and zero-temperature coefficient current - Google Patents
Method and circuit for providing zero-temperature coefficient voltage and zero-temperature coefficient current Download PDFInfo
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- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
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Abstract
The invention discloses a method and circuit for providing a zero-temperature coefficient voltage and a zero-temperature coefficient current. The circuit comprises a first bipolar transistor, a second bipolar transistor, a first transistor, a second transistor, an operational amplifier, a first resistor, a second resistor, a third resistor and a fourth resistor. The collecting electrode and the base electrode of the first bipolar transistor are grounded, and the emitting electrode of the first bipolar transistor is connected with one end of the second resistor and the inverting input end of the operational amplifier; the collecting electrode and the base electrode of the second bipolar transistor are grounded, the emitting electrode of the second bipolar transistor is connected with one end of the first resistor, and the other end of the first resistor is connected with one end of the third resistor and the non-inverting input end of the operational amplifier; the drain electrode of the first transistor is connected with the other end of the second resistor, the other end of the third resistor and one end of the fourth resistor, and the other end of the fourth resistor is grounded; the grid electrode of the first transistor and the grid electrode of the second transistor are connected with the output end of the operational amplifier, and the source electrode of the first transistor and the source electrode of the second transistor are connected with a power supply. By means of the method and circuit, the zero-temperature coefficient voltage and the zero-temperature coefficient current can be provided at the same time.
Description
Technical field
The present invention relates to integrated circuit (IC) design field, relate in particular to a kind of method and circuit that zero-temperature coefficient voltage and current is provided.
Background technology
Fiducial reference source circuit with gap is widely used in mimic channel, Fiducial reference source circuit with gap can provide one with the irrelevant voltage of technique, voltage and temperature, this voltage can be used in the circuit such as temperature sensing circuit, data converter, low pressure difference linear voltage regulator.
In existing technology realizes, the VBE voltage difference that the triode that main employing has two different current densities of positive temperature characterisitic obtains, and this voltage is added on a low-temperature coefficient resistance (its temperature coefficient is compared very micro-with the temperature coefficient of VBE voltage difference), obtain an electric current being directly proportional to temperature, again this electric current is given to the low-temperature coefficient resistance of a same type, obtain the voltage of a positive temperature coefficient (PTC), the VBE voltage that this voltage and triode have negative temperature coefficient is added, and obtains a zero-temperature coefficient voltage.
Under deep submicron process, the integrated level of chip is more and more higher, power consumption is also increasing, make the temperature change of chip larger, make the working current in circuit also vary with temperature and change, current technology only can provide the voltage of zero-temperature coefficient, cannot obtain the electric current of zero-temperature coefficient simultaneously.
Summary of the invention
In order to solve the above-mentioned defect existing in prior art, the present invention proposes a kind of method and circuit that zero-temperature coefficient voltage and current is provided, and zero-temperature coefficient voltage and zero-temperature coefficient circuit can be provided simultaneously.
One aspect of the present invention, a kind of Fiducial reference source circuit with gap is provided, it is characterized in that, comprise the first bipolar transistor, the second bipolar transistor, the first transistor, transistor seconds, operational amplifier, the first resistance, the second resistance, the 3rd resistance, the 4th resistance; Wherein,
The collector of described the first bipolar transistor and base earth, emitter connects one end of described the second resistance and the inverting input of described operational amplifier;
The collector of described the second bipolar transistor and base earth, emitter connects one end of described the first resistance, and the other end of described the first resistance connects described the 3rd one end of resistance and the normal phase input end of described operational amplifier;
The drain electrode of described the first transistor connects the other end of described the second resistance, one end of the other end of described the 3rd resistance, described the 4th resistance, the other end ground connection of described the 4th resistance;
The grid of described the first transistor is connected the output terminal of described operational amplifier with the grid of described transistor seconds; The source electrode of described the first transistor is connected power supply with the source electrode of described transistor seconds; The drain terminal of described transistor seconds is zero-temperature coefficient electrical current output terminal;
The resistance that described the first resistance, the second resistance, the 3rd resistance are positive temperature coefficient (PTC) or the resistance of negative temperature coefficient, the resistance that described the 4th resistance is positive temperature coefficient (PTC), and described the 4th positive temperature coefficient of resistance is greater than the absolute value of the temperature coefficient of described the first resistance, the second resistance, the 3rd resistance.
As technique scheme preferably, described the second resistance equates with the resistance of the 3rd resistance.
As technique scheme preferably, described the 4th resistance is substituted by the 5th resistance and the series connection of the 6th resistance.
As technique scheme preferably, also comprise the 7th resistance, described the 7th resistance is connected between described the first transistor and the second resistance, the 3rd resistance.
As technique scheme preferably, described the first transistor, transistor seconds are metal-oxide-semiconductor field effect transistor or bipolar transistor.
A kind of zero-temperature coefficient voltage and current that provides is also provided in the present invention, comprises aforesaid Fiducial reference source circuit with gap is provided, further comprising the steps of:
The normal phase input end of step-up error amplifier and inverting input have equal voltage;
Regulate the first resistance, the second resistance and the 3rd resistance, the voltage of the voltage of the second ohmically positive temperature coefficient (PTC) and the negative temperature coefficient of the first bipolar transistor is added, obtain the first voltage of zero-temperature coefficient;
Regulate the 4th resistance, make the current summation through the electric current of the 4th negative temperature coefficient of resistance and the positive temperature coefficient (PTC) of the first bipolar transistor and the second bipolar transistor, obtain the electric current of zero-temperature coefficient.
As technique scheme preferably, when described the 4th resistance is substituted by the 5th resistance and the series connection of the 6th resistance, described method also comprises:
Regulate the relative size of described the 5th resistance, the 6th resistance, obtain the second voltage of the zero-temperature coefficient of scope between 0V and the first voltage.
The present invention, by adopting positive temperature coefficient resistor R4, obtains the electric current of a negative temperature coefficient, and this electric current and PTAT current summation, obtain a zero-temperature coefficient electrical current; Utilize the positive temperature coefficient (PTC) electric current producing, by the resistance of resistance R 1, R2, R3 is suitably set, can obtain zero-temperature coefficient voltage VBG; And VBG is not subject to the impact of resistance R 4; In reality preparation, can make device off-design value, can, by fine setting R1, R2, R3, obtain zero-temperature coefficient voltage; Size by fine setting R4, obtains zero-temperature coefficient electrical current; Utilize the dividing potential drop of resistance R 4A, R4B can obtain being less than the bandgap voltage reference of 1V; By adjusting the ratio of R4A, R4B, can realize several and be worth big or small reference voltage output, to system, provide better dirigibility.
Other features and advantages of the present invention will be set forth in the following description, and, partly from instructions, become apparent, or understand by implementing the present invention.Object of the present invention and other advantages can be realized and be obtained by specifically noted structure in the instructions write, claims and accompanying drawing.
Below by drawings and Examples, technical scheme of the present invention is described in further detail.
Accompanying drawing explanation
Accompanying drawing is used to provide a further understanding of the present invention, and forms a part for instructions, for explaining the present invention, is not construed as limiting the invention together with embodiments of the present invention.In the accompanying drawings:
Fig. 1 is the structural drawing of the Fiducial reference source circuit with gap of embodiment of the present invention proposition;
Fig. 2 is the structural drawing of the another kind of Fiducial reference source circuit with gap of embodiment of the present invention proposition;
Fig. 3 is the structural drawing of another Fiducial reference source circuit with gap of embodiment of the present invention proposition;
Fig. 4 is the process flow diagram that the method for zero-temperature coefficient voltage and current is provided in the embodiment of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the preferred embodiments of the present invention are described, should be appreciated that preferred embodiment described herein, only for description and interpretation the present invention, is not intended to limit the present invention.
Be illustrated in figure 1 the Fiducial reference source circuit with gap that the embodiment of the present invention proposes, comprise:
The first bipolar transistor Q1, the second bipolar transistor Q2, the first transistor M1, transistor seconds M2, operational amplifier A, the first resistance R 1, the second resistance R 2, the 3rd resistance R 3, the 4th resistance R 4; Wherein:
The collector of the first bipolar transistor Q1 and base earth, emitter connects one end of the second resistance R 2 and the inverting input VN of operational amplifier A;
The collector of the second bipolar transistor Q2 and base earth, emitter connects one end of the first resistance R 1, and the other end of the first resistance R 1 connects one end of the 3rd resistance R 3 and the normal phase input end VP of operational amplifier A;
The drain electrode of the first transistor M1 connects the other end of the second resistance R 2, one end of the other end of the 3rd resistance R 3, the 4th resistance R 4, the other end ground connection of the 4th resistance R 4;
The output terminal of the grid concatenation operation amplifier A of the grid of the first transistor M1 and transistor seconds M2; The source electrode of the source electrode of the first transistor M1 and transistor seconds M2 is connected power vd D; The drain terminal of transistor seconds M2 is zero-temperature coefficient electrical current output terminal;
Wherein, the resistance that the first resistance R 1, the second resistance R 2, the 3rd resistance R 3 are positive temperature coefficient (PTC) or the resistance of negative temperature coefficient, the resistance that the 4th resistance R 4 is positive temperature coefficient (PTC), and the positive temperature coefficient (PTC) of the 4th resistance R 4 is greater than the absolute value of the temperature coefficient of the first resistance R 1, the second resistance R 2, the 3rd resistance R 3.
Below, describe the principle of the Fiducial reference source circuit with gap of embodiment of the present invention proposition in detail:
First make following hypothesis:
1, the gain of error amplifier A is enough large, and input impedance is infinitely great, and the voltage that VP, VN are ordered is equated;
2, ignore the mismatch in circuit, as the mismatch between resistance, the mismatch between transistor, the mismatch between bipolar transistor.
Pass between the collector current of bipolar transistor and its emitter base voltage is:
Wherein, I
sfor the saturation current of bipolar transistor, V
tfor thermal voltage, V
t=KT/q; K is Boltzmann constant, and T is absolute temperature, and q is electron charge, V
eBemitter base voltage for bipolar transistor.
Electric current in bipolar transistor is:
Wherein, I
c=I
b* β
f, I
bfor the base current of bipolar transistor, β
ffor DC amplification factor.
So the emitter base voltage of bipolar transistor is:
In Fig. 1, resistance R 2, R3 equal and opposite in direction, the positive-negative input end voltage of error amplifier A also equates, so the electric current in resistance R 2, R3 equates; So electric current I in the first bipolar transistor Q1, the second ambipolar Q2
q1, I
q2equate, the difference of the emitter base voltage of the two is
In formula (4), the ratio of supposing the emitter area of the first bipolar transistor Q1, the second bipolar transistor Q2 is 1:N, so the ratio of the saturation current of the two:
I
s1:I
s2＝1:N （5）
Therefore, the difference of the emitter base voltage of the first bipolar transistor Q1, the second bipolar transistor Q2 is:
ΔV
EB＝V
T·lnN （6）
From Fig. 1, see, the electric current in the first bipolar transistor Q1, the second bipolar transistor Q2 equals electric current in resistance R 1:
As can be seen here, the first bipolar transistor Q1 electric current I
q1, the second bipolar transistor Q2 electric current I
q2electric current for positive temperature coefficient (PTC).
Output voltage V BG is:
Wherein, V
eB1be the voltage of the negative temperature coefficient of the first bipolar transistor Q1,
generation is proportional to the voltage of the positive temperature coefficient (PTC) of temperature, by the resistance of resistance R 1, R2, R3 is suitably set, can obtain zero-temperature coefficient voltage VBG, and VBG is not subject to the impact of resistance R 4.
Because transistor M1 equates with M2 size, the two electric current is also equal, and size is the first bipolar transistor Q1 electric current I
q1, the second bipolar transistor Q2 electric current I
q2with electric current I in resistance R 4
r4sum:
IM1＝IM2＝I
Q1+I
Q2+I
R4 （9）
Wherein, the first bipolar transistor Q1 electric current I
q1, the second bipolar transistor Q2 electric current I
q2for the electric current of positive temperature coefficient (PTC), electric current I in resistance R 4
r4for the electric current of negative temperature coefficient, the size by suitable selection R4, can obtain zero-temperature coefficient electrical current, by the current mirror in transistor M1 to transistor M2, therefore, can adopt transistor M2 that the electric current of zero-temperature coefficient is outwards provided, not affect zero-temperature coefficient voltage VBG simultaneously.
In embodiment as shown in Figure 2, above-mentioned the 4th resistance R 4 is replaced with to resistance R 4A and the R4B of two series connection, thus, can obtain the voltage VBGLV on resistance R 4B:
Voltage VBGLV is also the voltage of a zero-temperature coefficient, by adjusting the relative size of R4A, R4B, can adjust the size of VBGLV, and it is changed between 0V and VBG.
In embodiment as shown in Figure 3, Fiducial reference source circuit with gap has been carried out to further improvement, particularly, this Fiducial reference source circuit with gap comprises:
The first bipolar transistor Q1, the second bipolar transistor Q2, the first transistor M1, transistor seconds M2, operational amplifier A, the first resistance R 1, the second resistance R 2, the 3rd resistance R 3, the 5th resistance R 4A, the 6th resistance R 4B, the 7th resistance R 23; Wherein:
The collector of the first bipolar transistor Q1 and base earth, emitter connects one end of the second resistance R 2 and the inverting input VN of operational amplifier A; The other end of the second resistance R 2 connects one end of the 7th resistance R 23;
The collector of the second bipolar transistor Q2 and base earth, emitter connects one end of the first resistance R 1, and the other end of the first resistance R 1 connects one end of the 3rd resistance R 3 and the normal phase input end VP of operational amplifier A; The other end of the 3rd resistance R 3 connects one end of the 7th resistance R 23;
The drain electrode of the first transistor M1 connects the other end of the 7th resistance R 23, one end of the 4th resistance R 4A, and the other end of the 5th resistance R 4A connects one end of the 6th resistance R 4B, the other end ground connection of the 6th resistance R 4B;
The output terminal of the grid concatenation operation amplifier A of the grid of the first transistor M1 and transistor seconds M2; The source electrode of the source electrode of the first transistor M1 and transistor seconds M2 is connected power vd D; The drain terminal of transistor seconds M2 is zero-temperature coefficient electrical current output terminal;
Wherein, the resistance that the first resistance R 1, the second resistance R 2, the 3rd resistance R 3 are positive temperature coefficient (PTC) or the resistance of negative temperature coefficient, the resistance that the 4th resistance R 4 is positive temperature coefficient (PTC), and the positive temperature coefficient (PTC) of the 4th resistance R 4 is greater than the absolute value of the temperature coefficient of the first resistance R 1, the second resistance R 2, the 3rd resistance R 3.
Add after the 7th resistance R 23, can reduce total resistance sizes, reduce chip area, because when realizing same pressure drop, the electric current flowing through in R23 is electric current sum in resistance R 2, R3, so, can make so total resistance of resistance reduce.
As shown in Figure 4, the method that zero-temperature coefficient voltage and current is provided that the embodiment of the present invention proposes, comprises above-mentioned Fiducial reference source circuit with gap is provided, further comprising the steps of:
The normal phase input end of step-up error amplifier and inverting input have equal voltage;
Regulate the first resistance, the second resistance and the 3rd resistance, the voltage of the voltage of the second ohmically positive temperature coefficient (PTC) and the negative temperature coefficient of the first bipolar transistor is added, obtain the first voltage of zero-temperature coefficient;
Regulate the 4th resistance, make the current summation through the electric current of the 4th negative temperature coefficient of resistance and the positive temperature coefficient (PTC) of the first bipolar transistor and the second bipolar transistor, obtain the electric current of zero-temperature coefficient.
Preferably, when described the 4th resistance is substituted by the 5th resistance and the series connection of the 6th resistance, described method also comprises:
Regulate the relative size of described the 5th resistance, the 6th resistance, obtain the second voltage of the zero-temperature coefficient of scope between 0V and the first voltage.
The present invention, by adopting positive temperature coefficient resistor R4, obtains the electric current of a negative temperature coefficient, and this electric current and PTAT current summation, obtain a zero-temperature coefficient electrical current; Utilize the positive temperature coefficient (PTC) electric current producing, by the resistance of resistance R 1, R2, R3 is suitably set, can obtain zero-temperature coefficient voltage VBG; And VBG is not subject to the impact of resistance R 4; In reality preparation, can make device off-design value, can, by fine setting R1, R2, R3, obtain zero-temperature coefficient voltage; Size by fine setting R4, obtains zero-temperature coefficient electrical current; Utilize the dividing potential drop of resistance R 4A, R4B can obtain being less than the bandgap voltage reference of 1V; By adjusting the ratio of R4A, R4B, can realize several and be worth big or small reference voltage output, to system, provide better dirigibility.
Those skilled in the art should understand, those skilled in the art can carry out various changes and modification and not depart from the spirit and scope of the present invention the present invention.Like this, if within of the present invention these are revised and modification belongs to the scope of the claims in the present invention and equivalent technologies thereof, the present invention is also intended to comprise these changes and modification interior.
Claims (10)
1. a Fiducial reference source circuit with gap, is characterized in that, comprises the first bipolar transistor, the second bipolar transistor, the first transistor, transistor seconds, operational amplifier, the first resistance, the second resistance, the 3rd resistance, the 4th resistance; Wherein,
The collector of described the first bipolar transistor and base earth, emitter connects one end of described the second resistance and the inverting input of described operational amplifier;
The collector of described the second bipolar transistor and base earth, emitter connects one end of described the first resistance, and the other end of described the first resistance connects described the 3rd one end of resistance and the normal phase input end of described operational amplifier;
The drain electrode of described the first transistor connects the other end of described the second resistance, one end of the other end of described the 3rd resistance, described the 4th resistance, the other end ground connection of described the 4th resistance;
The grid of described the first transistor is connected the output terminal of described operational amplifier with the grid of described transistor seconds; The source electrode of described the first transistor is connected power supply with the source electrode of described transistor seconds; The drain terminal of described transistor seconds is zero-temperature coefficient electrical current output terminal;
Wherein, the resistance that described the first resistance, the second resistance, the 3rd resistance are positive temperature coefficient (PTC) or the resistance of negative temperature coefficient, the resistance that described the 4th resistance is positive temperature coefficient (PTC), and described the 4th positive temperature coefficient of resistance is greater than the absolute value of the temperature coefficient of described the first resistance, the second resistance, the 3rd resistance.
2. circuit according to claim 1, is characterized in that, described the second resistance equates with the resistance of the 3rd resistance.
3. circuit according to claim 1 and 2, is characterized in that, described the 4th resistance is substituted by the 5th resistance and the series connection of the 6th resistance.
4. circuit according to claim 1 and 2, is characterized in that, also comprises the 7th resistance, and described the 7th resistance is connected between described the first transistor and the second resistance, the 3rd resistance.
5. circuit according to claim 3, is characterized in that, also comprises the 7th resistance, and described the 7th resistance is connected between described the first transistor and the second resistance, the 3rd resistance.
6. circuit according to claim 1 and 2, is characterized in that, described the first transistor, transistor seconds are metal-oxide-semiconductor field effect transistor or bipolar transistor.
7. circuit according to claim 3, is characterized in that, described the first transistor, transistor seconds are metal-oxide-semiconductor field effect transistor or bipolar transistor.
8. circuit according to claim 4, is characterized in that, described the first transistor, transistor seconds are metal-oxide-semiconductor field effect transistor or bipolar transistor.
9. the method that zero-temperature coefficient voltage and current is provided, is characterized in that, comprises Fiducial reference source circuit with gap as claimed in claim 1 is provided, further comprising the steps of:
The normal phase input end of step-up error amplifier and inverting input have equal voltage;
Regulate the first resistance, the second resistance and the 3rd resistance, the voltage of the voltage of the second ohmically positive temperature coefficient (PTC) and the negative temperature coefficient of the first bipolar transistor is added, obtain the first voltage of zero-temperature coefficient;
Regulate the 4th resistance, make the current summation through the electric current of the 4th negative temperature coefficient of resistance and the positive temperature coefficient (PTC) of the first bipolar transistor and the second bipolar transistor, obtain the electric current of zero-temperature coefficient.
10. method according to claim 9, is characterized in that, when described the 4th resistance is substituted by the 5th resistance and the series connection of the 6th resistance, described method also comprises:
Regulate the relative size of described the 5th resistance, the 6th resistance, obtain the second voltage of the zero-temperature coefficient of scope between 0V and the first voltage.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310215287.5A CN103677031B (en) | 2013-05-31 | 2013-05-31 | Method and circuit for providing zero-temperature coefficient voltage and zero-temperature coefficient current |
| PCT/CN2013/086515 WO2014190670A1 (en) | 2013-05-31 | 2013-11-04 | Method and circuit for providing zero-temperature coefficient voltage and current |
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| CN201310215287.5A CN103677031B (en) | 2013-05-31 | 2013-05-31 | Method and circuit for providing zero-temperature coefficient voltage and zero-temperature coefficient current |
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| CN108469868A (en) * | 2018-06-07 | 2018-08-31 | 博为科技有限公司 | Temperature self-adaptation current source and optical module |
| CN110825155A (en) * | 2019-12-06 | 2020-02-21 | 思瑞浦微电子科技（苏州）股份有限公司 | Zero temperature coefficient reference voltage and current source generating circuit |
| CN111338415A (en) * | 2020-03-12 | 2020-06-26 | 珠海格力电器股份有限公司 | Temperature-independent reference voltage source design method, reference voltage source and air conditioner |
| CN111751693A (en) * | 2020-03-02 | 2020-10-09 | 上海料聚微电子有限公司 | Method and circuit for detecting current amplification factor of bipolar transistor |
| CN112506262A (en) * | 2020-12-29 | 2021-03-16 | 上海华力微电子有限公司 | High-utilization-rate band-gap reference circuit |
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| CN110825155A (en) * | 2019-12-06 | 2020-02-21 | 思瑞浦微电子科技（苏州）股份有限公司 | Zero temperature coefficient reference voltage and current source generating circuit |
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| CN111751693B (en) * | 2020-03-02 | 2022-10-14 | 上海料聚微电子有限公司 | Method and circuit for detecting current amplification factor of bipolar transistor |
| CN111338415A (en) * | 2020-03-12 | 2020-06-26 | 珠海格力电器股份有限公司 | Temperature-independent reference voltage source design method, reference voltage source and air conditioner |
| CN112506262A (en) * | 2020-12-29 | 2021-03-16 | 上海华力微电子有限公司 | High-utilization-rate band-gap reference circuit |
| CN112667016A (en) * | 2020-12-29 | 2021-04-16 | 上海华力微电子有限公司 | Band-gap reference circuit system for high-precision correction of voltage temperature coefficient |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2014190670A1 (en) | 2014-12-04 |
| CN103677031B (en) | 2015-01-28 |
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