CN112667016A - Band-gap reference circuit system for high-precision correction of voltage temperature coefficient - Google Patents
Band-gap reference circuit system for high-precision correction of voltage temperature coefficient Download PDFInfo
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Abstract
The invention discloses a band-gap reference circuit system for correcting voltage temperature coefficient with high precision, wherein in a reference voltage output circuit), two parallel loops, namely a first loop and a second loop, are connected between a voltage output end and the ground; the first loop at least comprises a path, the path comprises at least two resistors with different temperature coefficients, and the resistors are connected in series; the second loop at least comprises a path, the path comprises at least two resistors with different temperature coefficients, and the resistors are connected in parallel.
Description
Technical Field
The invention relates to the field of integrated circuits, in particular to a band-gap reference circuit system for correcting a voltage temperature coefficient with high precision.
Background
In the existing integrated circuit design, a bandgap reference circuit is needed to generate a temperature coefficient current to compensate a circuit with an opposite temperature coefficient, and a stable reference voltage is also needed to be generated to be used by a power supply system, as shown in fig. 1, the bandgap reference circuit is a bandgap reference circuit, the circuit generates a current with a temperature coefficient through a BJT main path, the current is recorded as a PTAT current), and the current with a temperature coefficient, which is mirrored through a MOS transistor M4, is used by other compensation circuits.
Disclosure of Invention
The invention aims to solve the technical problem of providing a band-gap reference circuit system for correcting voltage and temperature coefficients with high precision, wherein the circuit system generates specific temperature coefficient current and simultaneously uses an optimal resistor array to shift, and the precision is optimized to the maximum.
In order to solve the above technical problem, the present invention provides a bandgap reference circuit system for correcting a voltage temperature coefficient with high precision, comprising: the temperature coefficient compensation circuit comprises a PTAT current generating circuit, a reference voltage output circuit and a temperature coefficient current output circuit, wherein the PTAT current generating circuit is used for generating current with a temperature coefficient; the first loop at least comprises a path, the path comprises at least two resistors with different temperature coefficients, and the resistors are connected in series; the second loop at least comprises a path, the path comprises at least two resistors with different temperature coefficients, and the resistors are connected in parallel.
Preferably, the first loop comprises N parallel paths, N is greater than or equal to 2, each path comprises at least two resistors with different temperature coefficients and a switching element, and the resistors and the switching elements are connected in series; the switch element is connected with an external control circuit, and the external control circuit controls the connection or disconnection of the access;
the second loop comprises N parallel paths, N is more than or equal to 2, each path comprises at least two resistors with different temperature coefficients and two switching elements, the resistors are connected in parallel, and each parallel branch is connected with one switching element; the switching elements are connected to an external control circuit which controls both switching elements to be turned on or off simultaneously, i.e. controls the on or off of the path.
Preferably, the first circuit comprises at least M pairs of resistors with different temperature coefficients, wherein M is greater than or equal to 2, and M switching elements; a switching element is connected in series between the pair of resistors at the middle in the path, the other pair of resistors are connected in series at intervals at two ends of the two-way path in sequence, and a bypass is formed between the connected nodes through the switching element; the switch element is connected with an external control circuit, and the external control circuit controls the bypass to be switched on or off;
the second loop comprises two parallel branches, each branch comprises at least M resistors connected in series, M is greater than or equal to 2, and the resistors in the two branches have different temperature coefficients; each branch circuit further comprises M switching elements, wherein one switching element is connected between the resistor and the ground in series, and a bypass is formed between a connecting node between the resistors and the ground through one of the rest switching elements.
Preferably, in the first loop, the resistors in each path are a first resistor and a second resistor, the gate of the switching element in each path is connected to the control signal, the source of the switching element is connected to the second end of the first resistor in the path, and the drain of the switching element is connected to the first end of the second resistor in the path; the first ends of the first resistors of all of the vias are connected together to form a positive terminal of the resistor array unit, and the second ends of the second resistors of all of the vias are connected together to form a negative terminal of the resistor array unit.
Preferably, there is one path in the first loop, and the two resistors in the path have different resistance values; the number of the second loop is one, and the resistance values of the two resistors in the second loop are different.
Preferably, each path of the first loop comprises two resistors, and the resistance ratio of the two resistors in each path is different from each other;
the second loop comprises two resistors in each path, and the resistance ratio of the two resistors in each path is different.
Preferably, the switching element is a PMOS transistor or an NMOS transistor.
Preferably, the two resistors in each pair of resistors in the first loop have different resistance values, and at least two resistors in one pair have different resistance values from the resistors in the other pairs; at least one resistor in each branch of the second loop has a resistance value different from that of other resistors in the branch.
Preferably, the resistor is formed by combining a plurality of resistors.
The circuit system of the invention can generate specific temperature coefficient current and simultaneously use the optimal resistor array to shift gears, and simultaneously, the precision is optimized to the maximum.
Drawings
Fig. 1 is a schematic diagram of a bandgap reference circuit in the prior art.
Fig. 2 is a schematic diagram of a bandgap reference circuit according to embodiment 1 of the present invention.
Fig. 3 is a circuit diagram of a first loop circuit of embodiment 2 different from embodiment 1.
Fig. 4 is a circuit diagram of a second loop circuit different from embodiment 1 in embodiment 2 of the present invention.
Fig. 5 is a circuit diagram of a first loop circuit of embodiment 3 different from that of embodiment 1.
Fig. 6 is a circuit diagram of a second loop circuit different from embodiment 1 in embodiment 3 of the present invention.
Fig. 7 is a current-voltage simulation diagram of the prior art.
Fig. 8 is a current-voltage simulation diagram according to embodiment 1 of the present invention.
Detailed Description
The invention is described in further detail below with reference to the following figures and detailed description:
example one
As shown in fig. 2, the bandgap reference circuit according to embodiment 1 of the present invention includes: a PTAT current generating circuit 10 for generating a current with a temperature coefficient; a reference voltage output circuit 20 for outputting a constant reference voltage; the temperature coefficient current output circuit 30 is used to output a current with a temperature coefficient to compensate other circuits with opposite temperature coefficients.
Fig. 2 is merely an exemplary PTAT current generation circuit 10 in this embodiment.
The PTAT current generation circuit 10 of the present embodiment includes: the operational amplifier OA, the first transistor Q1 and the second transistor Q2, the inverting input terminal of the operational amplifier OA is connected with the emitter of the first transistor Q1, and the non-inverting input terminal of the operational amplifier is connected with the emitter of the second transistor Q2 by connecting a third resistor R3 in series. The bases and collectors of the first transistor Q1 and the second transistor Q2 are both grounded. The emitter junction area of the second transistor Q2 is P times the emitter junction area of the first transistor Q1, P being an integer greater than or equal to 1.
The first transistor Q1 and the second transistor Q2 may be PNP transistors, MOS transistors, BJT or HBT devices.
The PTAT current generation circuit 10 further includes: the circuit comprises a first PMOS tube M1, a second PMOS tube M2, a first resistor R1, a second resistor R2 and a third resistor R3. The sources of the first PMOS transistor M1 and the second PMOS transistor M2 are both connected to the power supply terminal VDD. The gates of the first PMOS transistor M1 and the second PMOS transistor M2 are both connected to the output terminal of the operational amplifier OA. The drain of the first PMOS transistor M1 and one end of the first resistor R1 are both connected to the inverting input terminal of the operational amplifier OA, and the drain of the second PMOS transistor M2 and one end of the second resistor R2 are both connected to the non-inverting input terminal of the operational amplifier OA. The emitter of the second transistor Q2 is connected to the non-inverting input of the operational amplifier OA through a third resistor R3. The other ends of the first resistor R1 and the second resistor R2 are both grounded. Of course, the PTAT current generating circuit may adopt various existing circuits capable of generating PTAT current, such as the publications CN105320207A, CN100456197C, etc., and the application is not limited thereto.
The temperature coefficient current output circuit 30 of the present embodiment includes a fourth PMOS transistor M4, a source connected to a power supply terminal VDD, a gate connected to an output terminal of the operational amplifier OA, and a drain as a current output terminal with temperature coefficient.
The reference voltage output circuit 20 of the present embodiment includes a third PMOS transistor M3, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, and a reference voltage output terminal, wherein R4 and R5 are connected in series to form a first loop 201, and R6 and R7 are connected in parallel to form a second loop 202. The source of M3 is connected to power supply terminal VDD, the gate is connected to the output terminal of operational amplifier OA, and the drain is grounded after connecting R4 and R5 in series. R6 and R7 are respectively connected with the R4 and R5 which are connected in series in parallel, one end of the R8932 is connected with the voltage output end Vout, and the other end of the R7 is grounded. The reference voltage output terminal Vout is connected to the drain of M3. Wherein R4 and R5 are two kinds of resistors with different temperature coefficients respectively, R6 and R7 are two kinds of resistors with different temperature coefficients respectively, and the voltage output fluctuation of the reference voltage output end is reduced by adjusting the resistance values of the resistors R4, R5, R6 and R7. R4, R5, R6 and R7 can be composed of a plurality of resistors respectively, so that the resistances of R4, R5, R6 and R7 can be adjusted conveniently.
The simulation calculation method comprises the following steps:
let PTAT current temperature coefficient: i0 ═ a0 x + b0, x is the temperature T, -40 to 125
R4R 6 unit temperature coefficient of resistance R4 ═ a1 × x + b1 (R4R 6 same type of resistance, m 1R 4, m 2R 6 are required)
R5R 7 unit temperature coefficient of resistance R5 ═ a2 × x + b2 (R5R 7 same type of resistance, n 1R 5, n 2R 7 are required)
Vout voltage temperature coefficient Vo (a0 x + b0) (m 1R 4+ n 1R 5) (m 2R 6// n 2R 7)
It is assumed that a1<0, a2>0, a suitable ratio of m1 n1 is chosen, R4+ R5 is made to be a negative temperature coefficient, a suitable ratio of m2, n2 is chosen such that R6// R7 is a positive temperature coefficient, so that I0 (m 1R 4+ n 1R 5) is similarly a parabola with the opening up, I0 (m 2R 6// n 2R 7) is a parabola with the opening down, and finally I0 (m 1R 4+ n 1R 5) (m 2R 6// n 2R 7) are able to cancel out a part of each other.
FIG. 7 is a graph showing a simulation of the variation of the current and voltage with temperature in the prior art, wherein the left axis is the current value, the right axis is the voltage value, and the abscissa is the temperature, and the VOUT varies by 10.2mv (102.5ppm) with temperature without voltage-temperature coefficient correction. It can be seen that VOUT has large fluctuations for high precision circuits.
The embodiment adopts two resistors with different temperature coefficients (R4R 6 and R5R 7 and the same type of resistor) and a smart series-parallel relationship to eliminate and regulate the output voltage of VOUT (taking the output of 0.6V as an example). It can be seen that VOUT output is brought to a point of equilibrium, i.e., a parabolic-like shape, without affecting a particular temperature coefficient current. As a result, as shown in FIG. 8, VOUT varied by 0.08mv (0.827ppm) with temperature, and the temperature coefficient of voltage was optimized by nearly 128.3 times.
Therefore, the reference voltage output stability of the embodiment is higher, and the reference voltage output stability is more suitable for circuits with high precision requirements.
Example two
As shown in fig. 3 and 4, in embodiment 2, a resistor array with multiple gear control is used instead of the first loop 201 and the second loop 202 in embodiment 1, and the rest of the circuits are the same as those in embodiment 1, and are not described again here. Only the resistor array with the various shift controls, at least two, will be described in detail below. The present embodiment takes four gears as an example. The process deviation caused by the integrated circuit device can be corrected by setting a plurality of gears. The deviation of the actually output reference voltage from the designed value can be caused by the process deviation, the reference voltage output can be finely adjusted through different gears, the voltage output is closer to the designed value, and the requirement of a high-precision circuit is met.
The resistor array 40 shown in fig. 3 replaces the first loop 201 in embodiment 1.
Each gear is composed of two resistors and a switch element which are connected in series, and the on-off of the circuit is realized by controlling a switch device. The switching element of the present embodiment is a MOS transistor, and other switching elements may be used.
The first gear circuit consists of resistors R4a and R5a and a switch element S1; the second gear circuit consists of resistors R4b and R5b and a switch element S2; the third gear circuit consists of resistors R4c and R5c and a switch element S3; the fourth gear circuit is composed of resistors R4d, R5d and a switch element S4. Wherein R4a, R4b, R4c and R4d are resistors and have the same temperature coefficient; wherein R5a, R5b, R5c and R5d are resistors of another type, and have different temperature coefficients than R4a, R4b, R4c and R4 d. One or more gears are switched on according to actual needs. After the four gear circuits are connected in parallel, one end of each gear circuit is connected with the reference voltage output end Vout, and the other end of each gear circuit is grounded.
The resistance values of the resistors in each gear can be adjusted by setting different numbers of resistors, for example, the numbers of R4a & R5 a-51 &80 represent that the numbers of R4a and R5a are 51 and 80 respectively, and so on, the numbers of R4a & R5 a-51 &80, R4b & R5 b-52 &90, R4c & R5 c-53 &100, R4d & R5 d-54 &110, and the total number needs 590.
The resistor array 50 shown in fig. 4 replaces the second loop 202 in embodiment 1.
Each gear is composed of two resistors and two switch elements, and the on-off of the parallel loop is realized by controlling the switch device.
The resistor R6a and the switching element S1a connected in series in the first gear circuit are connected in parallel with the resistor R7d and the switching element S1b connected in series;
the resistor R6b and the switching element S2a connected in series in the second gear circuit are connected in parallel with the resistor R7c and the switching element S2b connected in series;
the resistor R6c and the switching element S3a connected in series in the third gear circuit are connected in parallel with the resistor R7b and the switching element S3b connected in series;
the resistor R6d and the switching element S4a connected in series in the fourth gear circuit are connected in parallel with the resistor R7a and the switching element S4b connected in series;
wherein R6a, R6b, R6c and R6d are resistors and have the same temperature coefficient; wherein R7a, R7b, R7c and R7d are resistors of another type, and have different temperature coefficients than R6a, R6b, R6c and R6 d. One or more gears are switched on according to actual needs. After the four gear circuits are connected in parallel, one end of each gear circuit is connected with the reference voltage output end Vout, and the other end of each gear circuit is grounded.
The resistance values of the resistors of each gear can be adjusted by setting different numbers of resistors, for example, 2910 is needed for R6a & R7a ═ 61&680, R6b & R7b ═ 62&670, R6c & R7c ═ 63&660, and R6d & R7d ═ 64& 650.
In the resistor array 40 and the resistor array 50, the gates of the switching elements S1, S1a, and S1b are connected to the same control loop or the same node, and are controlled to be turned on or off simultaneously. The gates of the switching elements S2, S2a and S2b are connected to the same control loop or the same node, and are controlled to be turned on or off simultaneously. The gates of the switching elements S3, S3a, and S3b are connected to the same control loop or the same node, and are controlled to be turned on or off simultaneously. The gates of the switching elements S4, S4a and S4b are connected to the same control loop or the same node, and are controlled to be turned on or off simultaneously.
EXAMPLE III
As shown in fig. 5 and 6, in embodiment 3, a resistor array with multiple gear control is used instead of the first loop 201 and the second loop 202 in embodiment 1, and the rest of the circuits are the same as those in embodiment 1, and are not described again here.
Only the resistor array with the various shift controls, at least two, will be described in detail below. The present embodiment takes four gears as an example.
The resistor array 60 shown in fig. 5 replaces the first loop 201 in embodiment 1.
The circuit comprises resistors R4w, R4x, R4y and R4z which are resistors of the same type and have the same temperature coefficient; r5w, R5x, R5y and R5z are also included, and are resistors of another type, and have different temperature coefficients than R4w, R4x, R4y and R4 z; the switch device further comprises switch elements K1, K2, K3 and K4, wherein the switch elements of the embodiment adopt MOS tubes, and other switch elements can also be adopted.
The resistors R4w, R4x, R4y and R4z are sequentially connected in series, then connected in series with the switch element K4, and connected in series with the resistors R5z, R5y, R5x and R5 w. One end of R4w is connected to the reference voltage output terminal Vout, and one end of R5w is grounded. The gates of the switching elements K1, K2, K3, and K4 are connected to an external control circuit, respectively. The source of K1 is connected to the connection point of R4w and R4x, and the drain of K1 is connected to the connection point of R5x and R5 w; the source of K2 is connected to the connection point of R4x and R4y, and the drain of K2 is connected to the connection point of R5y and R5 x; the source of K3 is connected to the connection point of R4y and R4z, and the drain of K3 is connected to the connection point of R5z and R5 y.
The resistance values of the resistors in each gear can be adjusted by setting different numbers of resistors, for example, R4w & R5w is 51&80, the numbers of R4w and R5w are 51 and 80, respectively, so that R4w & R5w is 51&80, R4x & R5x is 1&10, R4y & R5y is 1&10, and R4z & R5z is 1& 10. The resistor array 60 requires 164 resistor elements.
The resistor array 70 shown in fig. 6 replaces the second loop 202 in embodiment 1.
The circuit comprises resistors R6w, R6x, R6y and R6z which are resistors of the same type and have the same temperature coefficient; also includes R7w, R7x, R7y, R7z, which are another type of resistance, and have different temperature coefficients than R6w, R6x, R6y, R6 z; the switch element further comprises switch elements K1a, K2a, K3a, K4a, K1b, K2b, K3b and K4, wherein the switch element of the embodiment adopts MOS tubes, and other switch elements can also be adopted.
The resistors R6w, R6x, R6y and R6z are sequentially connected in series and then connected in series with the switching element K4a, one end of the R6w is connected with the reference voltage output end Vout, and the drain of the K4a is grounded; the source of the switching element K1a is connected to the connection point of R6w and R6x, and the drain of K1a is grounded; the source of the switching element K2a is connected to the connection point of R6x and R6y, and the drain of K2a is grounded; the source of the switching element K3a is connected to the connection point of R6y and R6z, and the drain of K3a is grounded;
the resistors R7w, R7x, R7y and R7z are sequentially connected in series and then connected in series with the switching element K1b, one end of the R7w is connected with the reference voltage output end Vout, and the drain of the K1b is grounded; the source of the switching element K4b is connected to the connection point of R7w and R7x, and the drain of K4b is grounded; the source of the switching element K3b is connected to the connection point of R7x and R7y, and the drain of K3b is grounded; the source of the switching element K2b is connected to the connection point of R7y and R7z, and the drain of K2b is grounded;
the resistance values of the resistors in each gear can be adjusted by setting different numbers of resistors, and for the resistor array 70, the resistors are increased by corresponding target values every time the resistors are switched to the next route, for example, R6w & R7w is 61&650, R6x & R7x is 1&10, R6y & R7y is 1&10, R6z & R7z is 1&10, and the number of resistors in the resistor array 70 needs 744.
The resistor array 60 and the resistor array 70 require a total of 908 resistors.
In the resistor array 40 and the resistor array 50, the gates of the switching elements K1, K1a, and K1b are connected to the same control loop, and are controlled to be turned on or off simultaneously. The gates of the switching elements K2, K2a, and K2b are connected to the same control loop, and are controlled to be turned on or off simultaneously. The gates of the switching elements K3, K3a, and K3b are connected to the same control loop, and are controlled to be turned on or off simultaneously. The gates of the switching elements K4, K4a, and K4b are connected to the same control loop, and are controlled to be turned on or off simultaneously.
Compared with the embodiment 2, the resistor array arrangement mode is different, the resistor arrangement mode of the embodiment 3 has better utilization rate of the resistors, fewer resistor elements can be adopted, and the area of the integrated circuit is reduced. Under the same working condition, 3500 resistors are needed in embodiment 2, and 908 resistors are needed in the embodiment.
The present invention has been described in detail with reference to the specific embodiments and examples, but these are not intended to limit the present invention. Many variations and modifications may be made by one of ordinary skill in the art without departing from the principles of the present invention, which should also be considered as within the scope of the present invention.
Claims (9)
1. A bandgap reference circuit system for correcting a voltage temperature coefficient with high precision, comprising:
a PTAT current generating circuit (10) for generating a current with a temperature coefficient,
a reference voltage output circuit (20) for outputting a constant reference voltage,
a temperature coefficient current output circuit (30) for outputting a current having a temperature coefficient to compensate for other circuits having an opposite temperature coefficient,
in the reference voltage output circuit (20), two parallel loops, namely a first loop (201, 40, 60) and a second loop (202, 50, 70), are connected between a voltage output end and the ground;
the first loop (201, 40, 60) at least comprises a path, the path comprises at least two resistors with different temperature coefficients, and the resistors are connected in series;
the second loop (202, 50, 70) comprises at least one path, the path comprises at least two resistors with different temperature coefficients, and the resistors are connected in parallel.
2. The high accuracy modified voltage temperature coefficient bandgap reference circuit system of claim 1, wherein:
the first loop (40) comprises N parallel paths, N is more than or equal to 2, each path comprises at least two resistors with different temperature coefficients and a switching element, and the resistors and the switching elements are connected in series; the switch element is connected with an external control circuit, and the external control circuit controls the connection or disconnection of the access;
the second loop (50) comprises N parallel paths, N is more than or equal to 2, each path comprises at least two resistors with different temperature coefficients and two switching elements, the resistors are connected in parallel, and each parallel branch is connected with one switching element; the switching elements are connected to an external control circuit which controls both switching elements to be turned on or off simultaneously, i.e. controls the on or off of the path.
3. The high accuracy modified voltage temperature coefficient bandgap reference circuit system of claim 1, wherein:
the first circuit (60) comprises at least M pairs of resistors with different temperature coefficients, wherein M is greater than or equal to 2, and M switching elements;
a switching element is connected in series between the pair of resistors at the middle in the path, the other pair of resistors are connected in series at intervals at two ends of the two-way path in sequence, and a bypass is formed between the connected nodes through the switching element; the switch element is connected with an external control circuit, and the external control circuit controls the bypass to be switched on or off;
the second loop (70) comprises two parallel branches, each branch comprises at least M resistors connected in series, M is greater than or equal to 2, and the resistors in the two branches have different temperature coefficients; each branch circuit further comprises M switching elements, wherein one switching element is connected between the resistor and the ground in series, and a bypass is formed between a connecting node between the resistors and the ground through one of the rest switching elements.
4. The high-precision voltage temperature coefficient correction bandgap reference circuit system according to claim 2 or 3, wherein in the first loop, the resistors in each path are a first resistor and a second resistor, the gate of the switching element in each path is connected to the control signal, the source of the switching element is connected to the second end of the first resistor in the path, and the drain of the switching element is connected to the first end of the second resistor in the path; the first ends of the first resistors of all of the vias are connected together to form a positive terminal of the resistor array unit, and the second ends of the second resistors of all of the vias are connected together to form a negative terminal of the resistor array unit.
5. The high accuracy modified voltage temperature coefficient bandgap reference circuit system of claim 1, wherein:
one path in the first loop (201, 40, 60), and the resistance values of two resistors in the path are different;
one path in the second loop (202, 50, 70), and the two resistors in the path have different resistance values.
6. The high accuracy modified voltage temperature coefficient bandgap reference circuit system of claim 2, wherein:
the number of the resistors contained in each path of the first loop (40) is two, and the resistance ratio of the two resistors in each path is different;
the second circuit (50) includes two resistors in each path, and the resistance ratio of the two resistors in each path is different from each other.
7. The high precision voltage temperature coefficient modified bandgap reference circuit system of claim 2 or 3, wherein: the switch element is a PMOS tube or an NMOS tube.
8. The high accuracy modified voltage temperature coefficient bandgap reference circuit system of claim 3, wherein:
the two resistors in each pair of resistors of the first loop (60) have different resistance values, and at least two resistors in one pair of resistors have different resistance values from the resistors in other pairs of resistors;
at least one resistor in each branch of the second circuit (70) has a different resistance value from the other resistors of the branch.
9. The bandgap reference circuit system with high precision for correcting voltage temperature coefficient according to claims 1-7, wherein: the resistor is formed by combining a plurality of resistors.
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| US20050110476A1 (en) * | 2003-11-26 | 2005-05-26 | Debanjan Mukherjee | Trimmable bandgap voltage reference |
| TW200837523A (en) * | 2007-03-06 | 2008-09-16 | Neotec Semiconductor Ltd | Circuit for adjusting reference voltage using fuse trimming |
| CN201138796Y (en) * | 2007-10-31 | 2008-10-22 | 无锡友芯集成电路设计有限公司 | Improved voltage scaling digital to analog converter |
| CN101599761A (en) * | 2008-06-06 | 2009-12-09 | 安华高科技Ecbuip(新加坡)私人有限公司 | Temperature-compensation circuit and method |
| CN101859158A (en) * | 2009-04-08 | 2010-10-13 | 台湾积体电路制造股份有限公司 | Reference current circuit and generating method thereof |
| CN102253683A (en) * | 2010-05-21 | 2011-11-23 | 普诚科技股份有限公司 | Voltage and current generator approaching zero temperature coefficient |
| CN102361439A (en) * | 2011-10-19 | 2012-02-22 | 中颖电子股份有限公司 | Chip built-in resistance-capacitance (RC) oscillator |
| CN103677031A (en) * | 2013-05-31 | 2014-03-26 | 国家电网公司 | Method and circuit for providing zero-temperature coefficient voltage and zero-temperature coefficient current |
| CN104714590A (en) * | 2015-01-09 | 2015-06-17 | 芯原微电子(上海)有限公司 | NMOS drive output band-gap reference circuit |
| US20170269627A1 (en) * | 2016-03-16 | 2017-09-21 | Allegro Microsystems, Llc | Bandgap reference circuit |
| CN107065997A (en) * | 2017-02-09 | 2017-08-18 | 上海矽望电子科技有限公司 | Trim the control method of power device input resistance |
| CN108693913A (en) * | 2018-05-21 | 2018-10-23 | 上海华力集成电路制造有限公司 | The current generating circuit of temperature coefficient adjustable section |
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Application publication date: 20210416 |