CN102253683A - Voltage and current generator approaching zero temperature coefficient - Google Patents

Abstract

The invention provides a voltage and current generator approaching a zero temperature coefficient so as to provide a voltage or a current affected by a temperature in a lower degree. The voltage and current generator generates combined resistors not related to the temperature by mixing resistors with the high resistance coefficient of the negative temperature coefficient and resistors with the low resistance coefficient of the positive temperature coefficient in an appropriate proportion, and a voltage and current generating circuit approaching the zero temperature coefficient is designed. In the invention, the resistors with the negative temperature coefficient and the resistors with the positive temperature coefficient are combined into the resistors approaching the zero temperature coefficient; the influence of a temperature effect on a bandgap reference voltage circuit is reduced to be low; and the bandgap reference voltage with any potential and the reference current with the zero temperature coefficient can be generated.

Description

The voltage of convergence zero-temperature coefficient and current generator

Technical field

The present invention refers to a kind of voltage and current generator of convergence zero-temperature coefficient especially relevant for a kind of voltage and current generator.

Background technology

Often need the stable reference voltage that can not be subjected to supply voltage and influence of temperature change in the analogue circuit applications, to promote yield, fiduciary level and the degree of accuracy of integrated circuit, this circuit is referred to as " band gap reference voltage circuit (Bandgap ReferenceCircuit) ", it provides a reference voltage to be beneficial to operation correctness of supervising in power supply or other circuit or the like, is the very extensive and important circuit of an application.The voltage that band gap produces should be temperature independent, this voltage is to produce by such mode: at a voltage (complementary to absolutetemperature who rises and descend with temperature, CTAT) add on a voltage that raises with the temperature of band gap circuit component (proportional to absolute temperature, PTAT).CTAT voltage is to produce by the transistorized base-emitter of the double carriers of positively biased being carried out tap, and PTAT voltage then utilizes two transistorized base-emitter voltage differences of double carriers to produce.Though the total current that these two double carriers transistors flow through equates, the base-emitter voltage swing difference of the two.Mimic channel has used the voltage and current reference circuit widely, and such reference circuit has shown with power supply and process parameter correlativity low, and irrelevant with temperature.Reference voltage provides a voltage level to use to other functional circuits in the circuit, as the output-voltage levels of voltage stabilizer (Regulator), the Push And Release of battery charger etc., is provided and is determined by reference voltage source or reference current source.

Temperature can influence electronic components such as diode, resistance, capacitor and transistor in varying degrees.And mixed-signal designs more and more need be carried out the design of high speed, low-voltage and high complexity on the chip that the internal power density unevenness is spared, and this can significantly increase the thermograde of chip.Therefore the designer must consider the influence that thermograde causes whole chips.Board design all may be responsive especially to the temperature difference that the several years Celsius are only arranged.For avoiding performance to reduce and the parameter inefficacy, the wiring of this class circuit must strictly observe the symmetry characteristic of circuit, understands the Temperature Distribution situation and also therefore becomes more important.But the voltage of present zero-temperature coefficient and the technology of electric current because do not include the temperature effect of resistance in consideration, make reference voltage still and temperature correlation, influence the accuracy of reference voltage.

Summary of the invention

One embodiment of the invention disclose a kind of voltage and current generator of convergence zero-temperature coefficient.This voltage and current generator comprise a power amplifier, one first P-type mos transistor, one first positive-negative-positive double carriers transistor, one second P-type mos transistor, one group of second positive-negative-positive double carriers transistor, a negative temperature coefficient resister, a positive temperature coefficient resistor, one first zero-temperature coefficient combined resistance, one the 3rd P-type mos transistor and one second zero-temperature coefficient combined resistance.This first P-type mos transistor is coupled to an output terminal of this power amplifier; This first positive-negative-positive double carriers transistor comprises an emitter-base bandgap grading, and this emitter-base bandgap grading is coupled to a negative input end and the transistorized drain electrode of this first P-type mos of this power amplifier; This second P-type mos transistor is coupled to this output terminal of this power amplifier; This is organized transistorized each the second positive-negative-positive double carriers transistor of the second positive-negative-positive double carriers and comprises an emitter-base bandgap grading, and the transistorized emitter-base bandgap grading of this each second positive-negative-positive double carriers is coupled to a positive input terminal and the transistorized drain electrode of this second P-type mos of this power amplifier; This negative temperature coefficient resister is coupled between this positive input terminal and transistorized this emitter-base bandgap grading of this each second positive-negative-positive double carriers of this power amplifier; This positive temperature coefficient resistor is coupled between this positive input terminal and transistorized this emitter-base bandgap grading of this each second positive-negative-positive double carriers of this power amplifier; This first zero-temperature coefficient combined resistance is coupled to this positive input terminal of this power amplifier; The 3rd P-type mos transistor is coupled to this output terminal of this power amplifier; And this second zero-temperature coefficient combined resistance, be coupled to the transistorized drain electrode of the 3rd P-type mos.

The voltage of convergence zero-temperature coefficient of the present invention and current generator, other comprises one the 3rd zero-temperature coefficient combined resistance, the 3rd zero-temperature coefficient combined resistance is coupled to transistorized this drain electrode of this first P-type mos; Wherein the 3rd zero-temperature coefficient combined resistance is coupled between transistorized this drain electrode of this first P-type mos and the ground end; Wherein the 3rd zero-temperature coefficient combined resistance comprises a positive temperature coefficient resistor and a negative temperature coefficient resister.

The voltage of convergence zero-temperature coefficient of the present invention and current generator, the transistorized one source pole of this first P-type mos, transistorized one source pole of this second P-type mos and the transistorized one source pole of the 3rd P-type mos are coupled to a power end, the transistorized collection utmost point of the transistorized collection utmost point of this first positive-negative-positive double carriers and this each second positive-negative-positive double carriers is coupled to a ground end, this first zero-temperature coefficient combined resistance is coupled between transistorized this drain electrode of this second P-type mos and this ground end, and this second zero-temperature coefficient combined resistance is coupled between transistorized this drain electrode of the 3rd P-type mos and this ground end.

The voltage of convergence zero-temperature coefficient of the present invention and current generator, this first zero-temperature coefficient combined resistance comprises a positive temperature coefficient resistor and a negative temperature coefficient resister; Wherein this second zero-temperature coefficient combined resistance comprises a positive temperature coefficient resistor and a negative temperature coefficient resister.

The voltage of convergence zero-temperature coefficient of the present invention and current generator, wherein this positive temperature coefficient resistor and this negative temperature coefficient resister form a zero-temperature coefficient combined resistance.

Another embodiment of the present invention discloses a kind of voltage and current generator of convergence zero-temperature coefficient.This voltage and current generator comprise a power amplifier, one first P-type mos transistor, one the one NPN type double carriers transistor, one second P-type mos transistor, one group of the 2nd NPN type double carriers transistor, a negative temperature coefficient resister, a positive temperature coefficient resistor, one first zero-temperature coefficient combined resistance, one the 3rd P-type mos transistor and one second zero-temperature coefficient combined resistance.This first P-type mos transistor is coupled to an output terminal of this power amplifier; The one NPN type double carriers transistor comprises a collection utmost point, and this collection utmost point is coupled to a negative input end and the transistorized drain electrode of this first P-type mos of this power amplifier; This second P-type mos transistor is coupled to this output terminal of this power amplifier; This is organized transistorized each the 2nd NPN type double carriers transistor of the 2nd NPN type double carriers and comprises a collection utmost point, and the transistorized collection utmost point of this each the 2nd NPN type double carriers is coupled to a positive input terminal and the transistorized drain electrode of this second P-type mos of this power amplifier; This negative temperature coefficient resister is coupled between this positive input terminal and transistorized this collection utmost point of this each the 2nd NPN type double carriers of this power amplifier; This positive temperature coefficient resistor is coupled between this positive input terminal and transistorized this collection utmost point of this each the 2nd NPN type double carriers of this power amplifier; This first zero-temperature coefficient combined resistance is coupled to this positive input terminal of this power amplifier; The 3rd P-type mos transistor is coupled to this output terminal of this power amplifier; And this second zero-temperature coefficient combined resistance, be coupled to the transistorized drain electrode of the 3rd P-type mos.

The voltage of convergence zero-temperature coefficient of the present invention and current generator, other comprises one the 3rd zero-temperature coefficient combined resistance, the 3rd zero-temperature coefficient combined resistance is coupled to transistorized this drain electrode of this first P-type mos; Wherein the 3rd zero-temperature coefficient combined resistance is coupled between transistorized this drain electrode of this first P-type mos and the ground end; Wherein the 3rd zero-temperature coefficient combined resistance comprises a positive temperature coefficient resistor and a negative temperature coefficient resister.

The voltage of convergence zero-temperature coefficient of the present invention and current generator, the transistorized one source pole of this first P-type mos, transistorized one source pole of this second P-type mos and the transistorized one source pole of the 3rd P-type mos are coupled to a power end, transistorized emitter-base bandgap grading of the one NPN type double carriers and the transistorized emitter-base bandgap grading of this each the 2nd NPN type double carriers are coupled to a ground end, this first zero-temperature coefficient combined resistance is coupled between transistorized this drain electrode of this second P-type mos and this ground end, and this second zero-temperature coefficient combined resistance is coupled between transistorized this drain electrode of the 3rd P-type mos and this ground end.

The voltage of convergence zero-temperature coefficient of the present invention and current generator, this first zero-temperature coefficient combined resistance comprises a positive temperature coefficient resistor and a negative temperature coefficient resister; Wherein this second zero-temperature coefficient combined resistance comprises a positive temperature coefficient resistor and a negative temperature coefficient resister.

The voltage of convergence zero-temperature coefficient of the present invention and current generator, wherein this positive temperature coefficient resistor and this negative temperature coefficient resister form a zero-temperature coefficient combined resistance.

The present invention utilizes negative temperature coefficient resister and positive temperature coefficient resistor to be combined into resistance near zero-temperature coefficient, temperature effect is reduced to very little to the influence of band gap reference voltage circuit, and can produce the band gap reference voltage of any current potential and the reference current of zero-temperature coefficient.

Description of drawings

Fig. 1 is that one embodiment of the invention disclose a kind of voltage of convergence zero-temperature coefficient and the synoptic diagram of current generator.

Fig. 2 is that another embodiment of the present invention discloses a kind of voltage of convergence zero-temperature coefficient and the synoptic diagram of current generator.

Embodiment

Please refer to Fig. 1, Fig. 1 is one embodiment of the invention, discloses a kind of synoptic diagram of voltage generator 10 of convergence zero-temperature coefficient.Voltage generator 10 comprises one first P-type mos transistor 101, one second P-type mos transistor 102, one the 3rd P-type mos transistor 103, one power amplifier 104, one the 3rd zero-temperature coefficient combined resistance 105, one first zero-temperature coefficient combined resistance 106, one second zero-temperature coefficient combined resistance 107, one negative temperature coefficient resister 108, one positive temperature coefficient resistor 109, one first positive-negative-positive double carriers transistor 110 and one group of second positive-negative-positive double carriers transistor 111.The first zero-temperature coefficient combined resistance 106 comprises a positive temperature coefficient resistor 1062 and a negative temperature coefficient resister 1061; The second zero-temperature coefficient combined resistance 107 comprises a positive temperature coefficient resistor 1072 and a negative temperature coefficient resister 1071; The 3rd zero-temperature coefficient combined resistance 105 comprises a positive temperature coefficient resistor 1052 and a negative temperature coefficient resister 1051.And the first zero-temperature coefficient combined resistance, 106 resistances are L * R, the second zero-temperature coefficient combined resistance, 107 resistances are N * R, the 3rd zero-temperature coefficient combined resistance 105 resistances are L * R, and the resistance after negative temperature coefficient resister 108 and positive temperature coefficient resistor 109 combinations is R.One group of second positive-negative-positive double carriers transistor 111 is to be formed in parallel by K the first positive-negative-positive double carriers transistor 110, and K 〉=1.

Please refer to Fig. 1, two input terminal voltages can equate if be in the normal operation scope then for power amplifier 104, that is to say that positive input terminal voltage V1 can equal negative input end voltage V2, therefore can derive the PTAT electric current I by formula (1) _PTAT:

V1＝I _PTAT×R+V _EB，111

V2＝V _EB，110

$\underset{\&CenterDot;}{\&CenterDot;\&CenterDot;}\mathrm{<figure-callout\; id="1"\; label="V"\; filenames="HSA00000115983400011.png"\; state="\{\{state\}\}">V</figure-callout>}1=V2$

$\&DoubleRightArrow;I_{\mathrm{PTAT}}=\frac{V_{\mathrm{EB},110}-V_{\mathrm{EB},111}}{R}=\frac{V_T\&times;\ln K}{R}---\left(1\right)$

$\underset{\&CenterDot;}{\&CenterDot;\&CenterDot;}{V}_T=\frac{\mathrm{kT}}{q}$

$\&DoubleRightArrow;I_{\mathrm{PTAT}}\&Proportional;T$

In addition, can obtain the CTAT electric current I by formula (2) _CTAT:

$I_{\mathrm{CTAT}}=\frac{V_{\mathrm{EB},110}}{L\&times;R}---\left(2\right)$

Because V _{EB, 110}Have negative temperature coefficient, and L * R is a zero-temperature coefficient, so I _CTATIt is the CTAT electric current.Next want the electric current I derived parameter L of the zero-temperature coefficient that through type (1) and formula (2) obtain, please refer to formula (3):

$I=I_{\mathrm{PTAT}}+I_{\mathrm{CTAT}}=\frac{V_T\&times;\ln K}{R}+\frac{V_{\mathrm{EB},110}}{L\&times;R}$

$\frac{\&PartialD;I}{\&PartialD;T}=\frac{\ln K}{R}\&times;\frac{{\&PartialD;V}_T}{\&PartialD;T}-\frac{V_T\&times;\ln K}{R^2}\&times;\frac{\&PartialD;R}{\&PartialD;T}+\frac{1}{L\&times;R}\&times;\frac{{\&PartialD;V}_{\mathrm{EB},110}}{\&PartialD;T}-\frac{V_{\mathrm{EB},110}}{L\&times;R^2}\&times;\frac{\&PartialD;R}{\&PartialD;T}$

Must use this new technology, make resistance R and temperature irrelevant, promptly

Could become following formula by abbreviation:

$\frac{\&PartialD;I}{\&PartialD;T}=\frac{\ln K}{R}\&times;\frac{{\&PartialD;V}_T}{\&PartialD;T}+\frac{1}{L\&times;R}\&times;\frac{{\&PartialD;V}_{\mathrm{EB},110}}{\&PartialD;T}$

$\&DoubleRightArrow;L=-\frac{\frac{{\&PartialD;V}_{\mathrm{EB},110}}{\&PartialD;T}}{\frac{{\&PartialD;V}_T}{\&PartialD;T}\ln K}---\left(3\right)$

Therefore, be L with resistance ratio after negative temperature coefficient resister 108 and positive temperature coefficient resistor 109 combine:, can obtain the electric current I of zero-temperature coefficient at 1 o'clock in the resistance of the first zero-temperature coefficient combined resistance 106.

Parameter N and reference voltage V are being discussed _RefBefore, please note the electric current I that the 3rd P-type mos transistor 103 has duplicated zero-temperature coefficient earlier, then please refer to formula (4):

$V_{\mathrm{ref}}=(I_{\mathrm{PTAT}}+I_{\mathrm{CTAT}})\&times;N\&times;R=V_T\&times;\ln K\&times;N+\frac{V_{\mathrm{EB},110}}{L}\&times;N$

$\&DoubleRightArrow;N=\frac{V_{\mathrm{ref}}}{V_T\&times;\ln K+\frac{V_{\mathrm{EB},110}}{L}}---\left(4\right)$

After the parameter L that formula (3) is obtained is brought formula (4) into, can obtain parameter N and reference voltage V _RefRelational expression.Please refer to formula (4), can find out reference voltage V easily _RefCan change with parameter N, not about the about 1.25V of limitation.

The effect of the 3rd zero-temperature coefficient combined resistance 105 is to make relatively symmetry of the circuit seen away from the positive input terminal and the negative input end of power amplifier 104.

Please refer to Fig. 2, Fig. 2 is an another embodiment of the present invention, discloses a kind of synoptic diagram of voltage generator 20 of convergence zero-temperature coefficient.Voltage generator 20 comprises one first P-type mos transistor 201, one second P-type mos transistor 202, one the 3rd P-type mos transistor 203, one power amplifier 204, one the 3rd zero-temperature coefficient combined resistance 205, one first zero-temperature coefficient combined resistance 206, one second zero-temperature coefficient combined resistance 207, one negative temperature coefficient resister 208, one positive temperature coefficient resistor 209, one the one NPN type double carriers transistor 210 and one group of the 2nd NPN type double carriers transistor 211.The first zero-temperature coefficient combined resistance 206 comprises a positive temperature coefficient resistor 2062 and a negative temperature coefficient resister 2061; The second zero-temperature coefficient combined resistance 207 comprises a positive temperature coefficient resistor 2072 and a negative temperature coefficient resister 2071; The 3rd zero-temperature coefficient combined resistance 205 comprises a positive temperature coefficient resistor 2052 and a negative temperature coefficient resister 2051.And the first zero-temperature coefficient combined resistance, 206 resistances are L * R, the second zero-temperature coefficient combined resistance, 207 resistances are N * R, the 3rd zero-temperature coefficient combined resistance 205 resistances are L * R, and the resistance after negative temperature coefficient resister 208 and positive temperature coefficient resistor 209 combinations is R.One group of the 2nd NPN type double carriers transistor 211 is to be formed in parallel by a K NPN type double carriers transistor 210, and K 〉=1.

Please refer to Fig. 2, two input terminal voltages can equate if be in the normal operation scope then for power amplifier 204, that is to say that positive input terminal voltage V1 can equal negative input end voltage V2, therefore can derive the PTAT electric current I by formula (5) _PTAT:

V1＝I _PTAT×R+V _BE，211

V2＝V _BE，210

$\underset{\&CenterDot;}{\&CenterDot;\&CenterDot;}\mathrm{<figure-callout\; id="1"\; label="V"\; filenames="HSA00000115983400011.png"\; state="\{\{state\}\}">V</figure-callout>}1=V2$

$\&DoubleRightArrow;I_{\mathrm{PTAT}}=\frac{V_{\mathrm{BE},210}-V_{\mathrm{BE},211}}{R}=\frac{V_T\&times;\ln K}{R}---\left(5\right)$

$\underset{\&CenterDot;}{\&CenterDot;\&CenterDot;}{V}_T=\frac{\mathrm{kT}}{q}$

$\&DoubleRightArrow;I_{\mathrm{PTAT}}\&Proportional;T$

In addition, can obtain the CTAT electric current I by formula (6) _CTAT:

$I_{\mathrm{CTAT}}=\frac{V_{\mathrm{BE},210}}{L\&times;R}---\left(6\right)$

Because V _{BE, 210}Have negative temperature coefficient, and L * R is a zero-temperature coefficient, so I _CTATIt is the CTAT electric current.Next want the electric current I derived parameter L of the zero-temperature coefficient that through type (5) and formula (6) obtain, please refer to formula (7):

$I=I_{\mathrm{PTAT}}+I_{\mathrm{CTAT}}=\frac{V_T\&times;\ln K}{R}+\frac{V_{\mathrm{BE},210}}{L\&times;R}$

$\frac{\&PartialD;I}{\&PartialD;T}=\frac{\ln K}{R}\&times;\frac{{\&PartialD;V}_T}{\&PartialD;T}-\frac{V_T\&times;\ln K}{R^2}\&times;\frac{\&PartialD;R}{\&PartialD;T}+\frac{1}{L\&times;R}\&times;\frac{{\&PartialD;V}_{\mathrm{BE},210}}{\&PartialD;T}-\frac{V_{\mathrm{BE},210}}{L\&times;R^2}\&times;\frac{\&PartialD;R}{\&PartialD;T}$

Must use this new technology, make resistance R and temperature irrelevant, promptly

Could become following formula by abbreviation:

$\frac{\&PartialD;I}{\&PartialD;T}=\frac{\ln K}{R}\&times;\frac{{\&PartialD;V}_T}{\&PartialD;T}+\frac{1}{L\&times;R}\&times;\frac{{\&PartialD;V}_{\mathrm{BE},210}}{\&PartialD;T}$

$\&DoubleRightArrow;L=-\frac{\frac{{\&PartialD;V}_{\mathrm{BE},210}}{\&PartialD;T}}{\frac{{\&PartialD;V}_T}{\&PartialD;T}\ln K}---\left(7\right)$

Therefore, be L with resistance ratio after negative temperature coefficient resister 208 and positive temperature coefficient resistor 209 combine:, can obtain the electric current I of zero-temperature coefficient at 1 o'clock in the resistance of the first zero-temperature coefficient combined resistance 206.

Parameter N and reference voltage V are being discussed _RefBefore, please note the electric current I that the 3rd P-type mos transistor 203 has duplicated zero-temperature coefficient earlier, then please refer to formula (8):

$V_{\mathrm{ref}}=(I_{\mathrm{PTAT}}+I_{\mathrm{CTAT}})\&times;N\&times;R=V_T\&times;\ln K\&times;N+\frac{V_{\mathrm{BE},210}}{L}\&times;N$

$\&DoubleRightArrow;N=\frac{V_{\mathrm{ref}}}{V_T\&times;\ln K+\frac{V_{\mathrm{BE},210}}{L}}---\left(8\right)$

After the parameter L that formula (7) is obtained is brought formula (8) into, can obtain parameter N and reference voltage V _RefRelational expression.Please refer to formula (8), can find out reference voltage V easily _RefCan change with parameter N, not about the about 1.25V of limitation.

The effect of the 3rd zero-temperature coefficient combined resistance 205 is to make relatively symmetry of the circuit seen away from the positive input terminal and the negative input end of power amplifier 204.

In summary, band gap reference voltage circuit can be produced the zero-temperature coefficient reference voltage in theory, but under situation the about temperature effect of resistance not being taken into account, band gap reference voltage circuit still can be subjected to Temperature Influence.The present invention utilizes negative temperature coefficient resister and positive temperature coefficient resistor to be combined into resistance near zero-temperature coefficient, temperature effect is reduced to very little to the influence of band gap reference voltage circuit, and can produce the band gap reference voltage of any current potential and the reference current of zero-temperature coefficient.

The above only is preferred embodiment of the present invention, and all equalizations of being done according to the present patent application claim change and modify, and all should belong to covering scope of the present invention.

Being simply described as follows of symbol in the accompanying drawing:

10,20: the voltage generator of convergence zero-temperature coefficient

101,102,103,201,202,203:P type metal oxide semiconductor transistor

104,204: power amplifier

105,106,107,205,206,207: the zero-temperature coefficient combined resistance

1051,1061,1071,108,2051,2061,2071,208: negative temperature coefficient resister

1052,1062,1072,109,2052,2062,2072,109: positive temperature coefficient resistor

110: the first positive-negative-positive double carriers transistors

210: the one NPN type double carriers transistors

111: one groups second positive-negative-positive double carriers transistors

211: one groups the 2nd NPN type double carriers transistors

I _PTAT: the PTAT electric current

I _CTAT: the CTAT electric current

V _Ref: reference voltage.

Claims (10)

1. the voltage of a convergence zero-temperature coefficient and current generator is characterized in that, comprising:

One power amplifier;

One first P-type mos transistor is coupled to an output terminal of this power amplifier;

One first positive-negative-positive double carriers transistor comprises an emitter-base bandgap grading, and this emitter-base bandgap grading is coupled to a negative input end and the transistorized drain electrode of this first P-type mos of this power amplifier;

One second P-type mos transistor is coupled to this output terminal of this power amplifier;

One group of second positive-negative-positive double carriers transistor, this is organized transistorized each the second positive-negative-positive double carriers transistor of the second positive-negative-positive double carriers and comprises an emitter-base bandgap grading, and the transistorized emitter-base bandgap grading of this each second positive-negative-positive double carriers is coupled to a positive input terminal and the transistorized drain electrode of this second P-type mos of this power amplifier;

One negative temperature coefficient resister is coupled between this positive input terminal and transistorized this emitter-base bandgap grading of this each second positive-negative-positive double carriers of this power amplifier;

One first zero-temperature coefficient combined resistance is coupled to this positive input terminal of this power amplifier;

One the 3rd P-type mos transistor is coupled to this output terminal of this power amplifier; And

One second zero-temperature coefficient combined resistance is coupled to the transistorized drain electrode of the 3rd P-type mos.

2. the voltage of convergence zero-temperature coefficient according to claim 1 and current generator, it is characterized in that, other comprises one the 3rd zero-temperature coefficient combined resistance, and the 3rd zero-temperature coefficient combined resistance is coupled to transistorized this drain electrode of this first P-type mos; Wherein the 3rd zero-temperature coefficient combined resistance is coupled between transistorized this drain electrode of this first P-type mos and the ground end; Wherein the 3rd zero-temperature coefficient combined resistance comprises a positive temperature coefficient resistor and a negative temperature coefficient resister.

3. the voltage of convergence zero-temperature coefficient according to claim 1 and current generator, it is characterized in that, the transistorized one source pole of this first P-type mos, transistorized one source pole of this second P-type mos and the transistorized one source pole of the 3rd P-type mos are coupled to a power end, the transistorized collection utmost point of the transistorized collection utmost point of this first positive-negative-positive double carriers and this each second positive-negative-positive double carriers is coupled to a ground end, this first zero-temperature coefficient combined resistance is coupled between transistorized this drain electrode of this second P-type mos and this ground end, and this second zero-temperature coefficient combined resistance is coupled between transistorized this drain electrode of the 3rd P-type mos and this ground end.

4. the voltage of convergence zero-temperature coefficient according to claim 1 and current generator is characterized in that, this first zero-temperature coefficient combined resistance comprises a positive temperature coefficient resistor and a negative temperature coefficient resister; Wherein this second zero-temperature coefficient combined resistance comprises a positive temperature coefficient resistor and a negative temperature coefficient resister.

5. the voltage of convergence zero-temperature coefficient according to claim 1 and current generator, it is characterized in that, other comprises a positive temperature coefficient resistor, and this positive temperature coefficient resistor is coupled between this positive input terminal and transistorized this emitter-base bandgap grading of this each second positive-negative-positive double carriers of this power amplifier; Wherein this positive temperature coefficient resistor and this negative temperature coefficient resister form a zero-temperature coefficient combined resistance.

6. the voltage of a convergence zero-temperature coefficient and current generator is characterized in that, comprising:

One power amplifier;

One first P-type mos transistor is coupled to an output terminal of this power amplifier;

One the one NPN type double carriers transistor comprises a collection utmost point, and this collection utmost point is coupled to a negative input end and the transistorized drain electrode of this first P-type mos of this power amplifier;

One second P-type mos transistor is coupled to this output terminal of this power amplifier;

One group of the 2nd NPN type double carriers transistor, this is organized transistorized each the 2nd NPN type double carriers transistor of the 2nd NPN type double carriers and comprises a collection utmost point, and the transistorized collection utmost point of this each the 2nd NPN type double carriers is coupled to a positive input terminal and the transistorized drain electrode of this second P-type mos of this power amplifier;

One negative temperature coefficient resister is coupled between this positive input terminal and transistorized this collection utmost point of this each the 2nd NPN type double carriers of this power amplifier;

One first zero-temperature coefficient combined resistance is coupled to this positive input terminal of this power amplifier;

One the 3rd P-type mos transistor is coupled to this output terminal of this power amplifier; And

One second zero-temperature coefficient combined resistance is coupled to the transistorized drain electrode of the 3rd P-type mos.

7. the voltage of convergence zero-temperature coefficient according to claim 6 and current generator, it is characterized in that, other comprises one the 3rd zero-temperature coefficient combined resistance, and the 3rd zero-temperature coefficient combined resistance is coupled to transistorized this drain electrode of this first P-type mos; Wherein the 3rd zero-temperature coefficient combined resistance is coupled between transistorized this drain electrode of this first P-type mos and the ground end; Wherein the 3rd zero-temperature coefficient combined resistance comprises a positive temperature coefficient resistor and a negative temperature coefficient resister.

8. the voltage of convergence zero-temperature coefficient according to claim 6 and current generator, it is characterized in that, the transistorized one source pole of this first P-type mos, transistorized one source pole of this second P-type mos and the transistorized one source pole of the 3rd P-type mos are coupled to a power end, transistorized emitter-base bandgap grading of the one NPN type double carriers and the transistorized emitter-base bandgap grading of this each the 2nd NPN type double carriers are coupled to a ground end, this first zero-temperature coefficient combined resistance is coupled between transistorized this drain electrode of this second P-type mos and this ground end, and this second zero-temperature coefficient combined resistance is coupled between transistorized this drain electrode of the 3rd P-type mos and this ground end.

9. the voltage of convergence zero-temperature coefficient according to claim 6 and current generator is characterized in that, this first zero-temperature coefficient combined resistance comprises a positive temperature coefficient resistor and a negative temperature coefficient resister; Wherein this second zero-temperature coefficient combined resistance comprises a positive temperature coefficient resistor and a negative temperature coefficient resister.

10. the voltage of convergence zero-temperature coefficient according to claim 6 and current generator, it is characterized in that, other comprises a positive temperature coefficient resistor, and this positive temperature coefficient resistor is coupled between this positive input terminal and transistorized this collection utmost point of this each the 2nd NPN type double carriers of this power amplifier; Wherein this positive temperature coefficient resistor and this negative temperature coefficient resister form a zero-temperature coefficient combined resistance.

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