CN101131593A - Current source - Google Patents
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- CN101131593A CN101131593A CNA2006100303118A CN200610030311A CN101131593A CN 101131593 A CN101131593 A CN 101131593A CN A2006100303118 A CNA2006100303118 A CN A2006100303118A CN 200610030311 A CN200610030311 A CN 200610030311A CN 101131593 A CN101131593 A CN 101131593A
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- resistance
- temperature coefficient
- current
- current source
- temperature
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Abstract
This invention discloses a sort of current supply, its purpose is that it realizes the temperature coefficient of the current supply is zero; thereby it produces a stable export current which does not follow the change of temperature. This current supply consists of current-limiting resistance; this current-limiting resistance consists of a first resistance and a second resistance that they are connection in series. This first resistance adopts the positive temperature coefficient, and this second resistance adopts the negative temperature coefficient. Possibly this first resistance and the second resistance are all adopt the positive temperature, but the temperature coefficient of this first resistance is greater than the temperature coefficient of this second resistance.
Description
Technical field
The present invention relates to a kind of current source, relate in particular to the not temperature variant current source of a kind of output current.
Background technology
Current source is all to need the basic structure used in many circuit, promptly can be used as biasing element, also can be used as the load cell of amplifier stage.Therefore, often need to be equipped with the not current source of temperature influence of output current.At present common current source generally as shown in Figure 1, by the MOFET T3 of MOFET T1, the T2 of P raceway groove and N raceway groove with T4 forms and a resistance R is formed, wherein resistance R can be used to the current value of definite this current source circuit.Because the influence of pipe technology is removed resistance R other circuit in addition and is presented negative temperature characteristic, so generally select for use the resistance of positive temperature coefficient (PTC) to neutralize in the hope of reaching the not temperature variant effect of final output current in this current source.But in actual the use, be difficult to the resistance type that finds temperature coefficient just in time to mate, excessive or too small.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of current source, and can realize making its temperature coefficient is zero, thereby produces not temperature variant stable output current.
For solving the problems of the technologies described above, the present invention is achieved by the following technical solutions: this current source comprises current-limiting resistance, and described current-limiting resistance is in series by one first resistance and one second resistance; Described first resistance is got positive temperature coefficient (PTC), and described second resistance is got negative temperature coefficient; Perhaps, described first resistance and described second resistance are all got positive temperature coefficient (PTC), but the temperature coefficient of described first resistance is greater than the temperature coefficient of described second resistance.
The present invention has adopted technique scheme, has following beneficial effect, can realize that the temperature coefficient of current source is zero by the resistance of adjusting current-limiting resistance, thereby not temperature variant steady current can be provided, and this current source is simple in structure, area is little.
Description of drawings
The present invention is further detailed explanation below in conjunction with accompanying drawing and embodiment:
Fig. 1 is a current source structural representation commonly used at present;
Fig. 2 is a current source structural representation of the present invention.
Embodiment
As shown in Figure 2, the resistance R among Fig. 1 is replaced to the series circuit of resistance R 1 and resistance R 2.Wherein, the temperature coefficient of R1 and R2 is different, and R1 gets positive temperature coefficient (PTC), and R2 gets negative temperature coefficient.Perhaps R1 and R2 are taken as positive temperature coefficient (PTC) simultaneously, and the temperature coefficient of R1 is big, and the temperature coefficient of R2 is little.Like this by changing the value of R1 and R2, always can obtain the resistance of the ideal temperature coefficient that we need.Thereby the output current that makes current source is adjusted to not temperature variant steady current.
Because N trap resistance and intrinsic polysilicon resistance all are the resistance that is in daily use.As shown in Figure 1, if resistance R adopts N trap resistance, temperature coefficient is positive, but compares with circuit characteristic, and temperature coefficient is excessive.If adopt intrinsic polysilicon resistance, temperature coefficient is born, and is less qualified to do it.Two resistance in current source structure shown in Figure 2, one with N trap resistance, uses intrinsic polysilicon resistance for one, all be the resistance that is in daily use, and without special process, just the use that is together in series of two resistance, regulate the resistance of two resistance, just obtained the resistance of ideal temperature coefficient.
By emulation and actual test, prove that all current source of the present invention can provide the output current of stable not temperature influence.
Claims (2)
1. a current source comprises current-limiting resistance, it is characterized in that, described current-limiting resistance is in series by one first resistance and one second resistance; Described first resistance is got positive temperature coefficient (PTC), and described second resistance is got negative temperature coefficient; Perhaps, described first resistance and described second resistance are all got positive temperature coefficient (PTC), but the temperature coefficient of described first resistance is greater than the temperature coefficient of described second resistance.
2. current source according to claim 1 is characterized in that, described first resistance is N trap resistance, and described second resistance is intrinsic polysilicon resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100303118A CN100524146C (en) | 2006-08-23 | 2006-08-23 | Current source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100303118A CN100524146C (en) | 2006-08-23 | 2006-08-23 | Current source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101131593A true CN101131593A (en) | 2008-02-27 |
| CN100524146C CN100524146C (en) | 2009-08-05 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100303118A Active CN100524146C (en) | 2006-08-23 | 2006-08-23 | Current source |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100524146C (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102253683A (en) * | 2010-05-21 | 2011-11-23 | 普诚科技股份有限公司 | Voltage and current generator approaching zero temperature coefficient |
| CN101697086B (en) * | 2009-10-26 | 2011-12-28 | 北京交通大学 | Sub-threshold reference source compensated by adopting electric resistance temperature |
| CN101739056B (en) * | 2008-11-27 | 2012-01-25 | 比亚迪股份有限公司 | Reference current generation circuit |
| CN102542979A (en) * | 2011-11-08 | 2012-07-04 | 南京微盟电子有限公司 | Constant current light emitting diode (LED) driving circuit |
| CN111522381A (en) * | 2020-04-15 | 2020-08-11 | 南京微盟电子有限公司 | Temperature coefficient adjustable current reference circuit and method |
| CN112099563A (en) * | 2020-11-17 | 2020-12-18 | 四川科道芯国智能技术股份有限公司 | Low-power-consumption CMOS current source circuit for NFC chip |
| CN113485513A (en) * | 2021-09-08 | 2021-10-08 | 常州欣盛半导体技术股份有限公司 | Power supply starting circuit with temperature compensation |
-
2006
- 2006-08-23 CN CNB2006100303118A patent/CN100524146C/en active Active
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101739056B (en) * | 2008-11-27 | 2012-01-25 | 比亚迪股份有限公司 | Reference current generation circuit |
| CN101697086B (en) * | 2009-10-26 | 2011-12-28 | 北京交通大学 | Sub-threshold reference source compensated by adopting electric resistance temperature |
| CN102253683A (en) * | 2010-05-21 | 2011-11-23 | 普诚科技股份有限公司 | Voltage and current generator approaching zero temperature coefficient |
| CN102542979A (en) * | 2011-11-08 | 2012-07-04 | 南京微盟电子有限公司 | Constant current light emitting diode (LED) driving circuit |
| CN111522381A (en) * | 2020-04-15 | 2020-08-11 | 南京微盟电子有限公司 | Temperature coefficient adjustable current reference circuit and method |
| CN111522381B (en) * | 2020-04-15 | 2022-04-08 | 南京微盟电子有限公司 | Temperature coefficient adjustable current reference circuit and method |
| CN112099563A (en) * | 2020-11-17 | 2020-12-18 | 四川科道芯国智能技术股份有限公司 | Low-power-consumption CMOS current source circuit for NFC chip |
| CN113485513A (en) * | 2021-09-08 | 2021-10-08 | 常州欣盛半导体技术股份有限公司 | Power supply starting circuit with temperature compensation |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100524146C (en) | 2009-08-05 |
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Legal Events
| Date | Code | Title | Description |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER NAME: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI |
|
| CP03 | Change of name, title or address |
Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |