CN201846321U

CN201846321U - Segmented temperature compensation reference circuit

Info

Publication number: CN201846321U
Application number: CN201020608767XU
Authority: CN
Inventors: 吴飞
Original assignee: Nanshan Branch Company Shenzhen Fuman Electronic Co Ltd
Current assignee: Limited company of Fu Man electronics group of Shenzhen
Priority date: 2010-11-16
Filing date: 2010-11-16
Publication date: 2011-05-25
Anticipated expiration: 2020-11-16

Abstract

The utility model provides a segmented temperature compensation reference circuit, which belongs to the field of semiconductor integrated circuits, solves the problems that electronic components are burned out due to the changed ambient temperature and the unchanged output voltage in the prior art, and comprises an operational amplifier circuit, a driver transistor M1, a divider resistor R1, a divider resistor R2 and a divider resistor R3, and also comprises a transistor Q1 for detecting temperature, wherein a base electrode and a collector electrode of the transistor Q1 are grounded, and an emitter of the transistor Q1 is connected to any point between the divider resistor R1 and the divider resistor R2; and the output voltage of the segmented temperature compensation reference circuit is VTC. The segmented temperature compensation reference circuit is applied to the high temperature environment.

Description

A kind of segmentation temperature-compensating reference circuit

Technical field

The utility model relates to a kind of semiconductor integrated circuit, more specifically to a kind of segmentation temperature-compensating reference circuit.

Background technology

The output of general reference circuit is constant under all temps condition, perhaps monotone decreasing or monotonic increase.As shown in Figure 1, input VREF is a temperature independent magnitude of voltage, the needed VO=VREF* (R1/ (R1+R2)) that is output as.Get the resistance that R1 and R2 are same type, so R1 is the same with the temperature coefficient of R2, so the ratio of R1/ (R1+R2) and temperature coefficient are irrelevant, so VO also is a temperature independent magnitude of voltage.

In conjunction with Fig. 2, the simulation result figure for the circuit of prior art can show clearly that from figure when variations in temperature, the value of VO is constant always.

Above-mentioned circuit just often is suitable in ambient temperature, but for some particular surroundingss, variation of ambient temperature, raise as ambient temperature, electronic devices and components are also keeping same output voltage just to be easy to burn out components and parts, reduce the useful life of components and parts, so this constant voltage outputting circuit is just inapplicable when needing different benchmark output valves for different ambient temperatures.

The utility model content

Above-mentioned when ambient temperature changes for solving, circuit keeps identical magnitude of voltage output always, the impaired problem of circuit elements device, and the utility model provides a kind of segmentation temperature-compensating reference circuit.

The technical solution of the utility model is: a kind of segmentation temperature-compensating reference circuit is provided, comprise operation amplifier circuit, driving transistors M1, divider resistance R1, divider resistance R2 and divider resistance R3, the external reference voltage VREF of the positive input terminal of described operation amplifier circuit, the output of described operation amplifier circuit links to each other with the grid of described transistor M1, the external starting resistor VDD of the drain electrode of described transistor M1, the source electrode of described transistor M1 links to each other with divider resistance R3, described divider resistance R3, divider resistance R2 and divider resistance R1 connect successively, described divider resistance R1 ground connection, the negative input end of described operational amplifier links to each other with the end of divider resistance R3 and divider resistance R2, described segmentation temperature-compensating reference circuit also comprises the triode Q1 that is used for detected temperatures, the base stage of described triode Q1 and grounded collector, the emitter of described transistor Q1 be connected between described divider resistance R1 and divider resistance R2 arbitrarily a bit on, the output voltage of described segmentation temperature-compensating reference circuit is VTC.

The output point of described output voltage V TC at divider resistance R1, divide remove between piezoelectricity R2 and the divider resistance R3 contact that links to each other with described operation amplifier circuit negative output terminal more arbitrarily.

Described transistor M1 is a N type metal-oxide-semiconductor.

Described triode Q1 is the positive-negative-positive triode.

The beneficial effects of the utility model are: the first, the segmentation temperature-compensating reference circuit that provides of the utility model has designed temperature detection triode Q1 on the basis of original constant temperature output circuit, carry out temperature detection by triode Q1, after ambient temperature changes, circuit is regulated automatically, export different magnitudes of voltage, guaranteed the stability of circuit.

The second, the segmentation temperature-compensating reference circuit that provides of the utility model can reduce the circuit heating by reducing output voltage when ambient temperature is too high, has avoided that the circuit elements device is overheated to be burnt out.

Description of drawings

Fig. 1 is the circuit diagram of prior art.

Fig. 2 is the simulation result figure of the circuit of prior art.

Fig. 3 is a circuit diagram of the present utility model.

Fig. 4 is the simulation result figure of the utility model circuit.

Embodiment

Embodiment one:

In conjunction with Fig. 3, circuit diagram for the utility model segmentation temperature-compensating reference circuit, described segmentation temperature-compensating reference circuit comprises operation amplifier circuit, driving transistors M1, divider resistance R1, divider resistance R2 and divider resistance R3, the external reference voltage VREF of the positive input terminal of described operation amplifier circuit, the output of described operation amplifier circuit links to each other with the grid of described transistor M1, the external starting resistor VDD of the drain electrode of described transistor M1, the source electrode of described transistor M1 links to each other with divider resistance R3, described divider resistance R3, divider resistance R2 and divider resistance R1 connect successively, described divider resistance R1 ground connection, the negative input end of described operational amplifier links to each other with the end of divider resistance R3 and divider resistance R2, described segmentation temperature-compensating reference circuit also comprises the triode Q1 that is used for detected temperatures, the base stage of described triode Q1 and grounded collector, the emitter of described transistor Q1 be connected between described divider resistance R1 and divider resistance R2 a bit on, the output voltage of described segmentation temperature-compensating reference circuit is VTC.The output point of described output voltage V TC between divider resistance R1 and the divider resistance R2 a bit on.

Described driving transistors M1 is a N type metal-oxide-semiconductor.

Described triode Q1 is the positive-negative-positive triode.

The reference circuit of described segmentation temperature-compensating can produce an input voltage VREF, also can produce an output voltage V TC, and described VREF is temperature independent magnitude of voltage.

In conjunction with Fig. 4, be the utility model circuit simulation figure as a result, in the utility model segmentation temperature-compensating reference circuit, when temperature is low, detected temperatures triode Q1 can the needed base stage of conducting and emitter between voltage VBE be worth greater than VREF* (R1/ (R1+R2)), so do not have current direction Q1, so VTC=VREF* (R1/ (R1+R2)) at this moment.When temperature raises, detected temperatures triode Q1 can the needed base stage of conducting and emitter between voltage VBE will reduce, when reducing to when wanting little than VREF* (R1/ (R1+R2)) value, output VTC can be dragged down by VBE, at this moment VTC=VBE.Summing up the formula that gets up will obtain to export VTC is that (VREF* (R1/ (R1+R2)), VBE), simulation result figure as shown in Figure 4 for VTC=min.

Embodiment two:

The foregoing description one has selected point between divider resistance R1 and the divider resistance R2 as the tie point of output voltage V TC respectively, in fact the tie point of output voltage V TC can be selected whole divider resistance R1, what remove the continuous contact of operation amplifier circuit negative output terminal between divider resistance R2 and the divider resistance R3 a bit is arbitrarily tie point of output VTC, even branch pressure voltage R1, divider resistance R2 and divider resistance R3 inside are split into a plurality of resistance again, therefrom getting tie point again can for the tie point of output VCT, its principle is identical with the foregoing description one with circuit structure, is not described in detail.

Though preferred embodiment of the present utility model is disclosed with the purpose as illustration, but it will be appreciated by those skilled in the art that various modifications, interpolation and replacement are possible, as long as it does not break away from the spirit and scope of the present utility model that describe in detail in the claims.

Claims

1. segmentation temperature-compensating reference circuit, comprise operation amplifier circuit, driving transistors M1, divider resistance R1, divider resistance R2 and divider resistance R3, the external reference voltage VREF of the positive input terminal of described operation amplifier circuit, the output of described operation amplifier circuit links to each other with the grid of described transistor M1, the external starting resistor VDD of the drain electrode of described transistor M1, the source electrode of described transistor M1 links to each other with divider resistance R3, described divider resistance R3, divider resistance R2 and divider resistance R1 connect successively, described divider resistance R1 ground connection, the negative input end of described operational amplifier links to each other with the end of divider resistance R3 and divider resistance R2, it is characterized in that: described segmentation temperature-compensating reference circuit also comprises the triode Q1 that is used for detected temperatures, the base stage of described triode Q1 and grounded collector, the emitter of described transistor Q1 be connected between described divider resistance R1 and divider resistance R2 arbitrarily a bit on, the output voltage of described segmentation temperature-compensating reference circuit is VTC.

2. segmentation temperature-compensating reference circuit according to claim 1 is characterized in that: the output point of described output voltage V TC between divider resistance R1, divider resistance R2 and divider resistance R3, remove the contact that links to each other with described operation amplifier circuit negative output terminal more arbitrarily.

3. segmentation temperature-compensating reference circuit according to claim 2 is characterized in that: described transistor M1 is a N type metal-oxide-semiconductor.

4. segmentation temperature-compensating reference circuit according to claim 3 is characterized in that: described triode Q1 is the positive-negative-positive triode.