CN103050940B - A kind of thermal-shutdown circuit based on subthreshold value metal-oxide-semiconductor - Google Patents
A kind of thermal-shutdown circuit based on subthreshold value metal-oxide-semiconductor Download PDFInfo
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- CN103050940B CN103050940B CN201210545358.3A CN201210545358A CN103050940B CN 103050940 B CN103050940 B CN 103050940B CN 201210545358 A CN201210545358 A CN 201210545358A CN 103050940 B CN103050940 B CN 103050940B
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Abstract
A kind of thermal-shutdown circuit based on subthreshold value metal-oxide-semiconductor; be provided with temperature sensing circuit, voltage comparator and output Shaping circuit; temperature sensing circuit exports and is connected to voltage comparator; voltage comparator exports and is connected to output Shaping circuit; output Shaping electronic feedback exports and is connected to temperature sensing circuit, and output Shaping circuit produces the output voltage controlling subsequent conditioning circuit.Temperature sensing circuit is made up of the MOS mirror current source of sub-threshold region and resistor network, and voltage comparator adopts push-pull type two-stage voltage comparator.Do not use triode in circuit, improve the precision of temperature protection circuit, and be applicable to common CMOS process.
Description
Technical field
The present invention relates to the thermal-shutdown circuit in power integrated circuit, analog integrated circuit, particularly a kind of thermal-shutdown circuit based on subthreshold value metal-oxide-semiconductor, belongs to microelectronics technology.
Background technology
As the power consumption of power supply, driving element etc. is often very large in integrated circuit (IC) chip, owing to being integrated with the power switch pipe of high voltage and big current in switching power source chip, power consumption can be larger.Power consumption increases makes chip temperature raise, if dispel the heat ineffective, thermal-shutdown circuit is unreliable, is easy to the thermal breakdown causing device, causes device permanent damages also likely to make chip burn.
General thermal-shutdown circuit scheme; that the voltage adopting the conducting voltage of bipolar transistor negative temperature characteristic and a reference source to be produced by resistance is detected; due to the deviation that technique causes, cross warm spot and there will be larger deviation, thus cause the instability of thermal-shutdown circuit.And bipolar transistor needs to take larger area, the area of traditional thermal-shutdown circuit and cost is also made to increase.
Summary of the invention
In order to solve the problem that traditional thermal-shutdown circuit caused warm spot to offset because of process deviation; the invention provides a kind of thermal-shutdown circuit circuit based on sub-threshold region metal-oxide-semiconductor temperature characterisitic; it does not use triode, improves the precision of temperature protection circuit, and is applicable to common CMOS process.
Technical scheme of the present invention is: a kind of thermal-shutdown circuit based on subthreshold value metal-oxide-semiconductor, it is characterized in that: be provided with temperature sensing circuit, voltage comparator and output Shaping circuit, temperature sensing circuit exports and is connected to voltage comparator, voltage comparator exports and is connected to output Shaping circuit, output Shaping electronic feedback exports and is connected to temperature sensing circuit, and output Shaping circuit produces the output voltage controlling subsequent conditioning circuit; Wherein:
Temperature sensing circuit comprises ten metal-oxide-semiconductor M1 ~ M10, three resistance R0, R1, R2, one end of drain electrode contact resistance R0 of metal-oxide-semiconductor M1 and the grid of metal-oxide-semiconductor M2, the other end of the grid contact resistance R0 of metal-oxide-semiconductor M1 and with and the source electrode of metal-oxide-semiconductor M3 be connected, the drain electrode of metal-oxide-semiconductor M2 connects the source electrode of metal-oxide-semiconductor M4, the grid of metal-oxide-semiconductor M3 is with the gate interconnection of metal-oxide-semiconductor M4 and be connected the drain electrode of metal-oxide-semiconductor M3 and the drain electrode of metal-oxide-semiconductor M5, the grid of metal-oxide-semiconductor M5 is with the gate interconnection of metal-oxide-semiconductor M6 and be connected the drain electrode of metal-oxide-semiconductor M4 and the drain electrode of metal-oxide-semiconductor M6, the source electrode of metal-oxide-semiconductor M6 connects the drain electrode of metal-oxide-semiconductor M7, the grid of metal-oxide-semiconductor M7, the grid of metal-oxide-semiconductor M8 and the gate interconnection of metal-oxide-semiconductor M9 also connect the drain electrode of metal-oxide-semiconductor M8 and the source electrode of metal-oxide-semiconductor M6, metal-oxide-semiconductor M7, M8, the source electrode of M9 all connects supply voltage, one end of the drain electrode contact resistance R1 of metal-oxide-semiconductor M9, one end of other end contact resistance R2 of R1 and the drain electrode of metal-oxide-semiconductor M10, the other end of resistance R2 and metal-oxide-semiconductor M1, M2, the source grounding of M10,
Voltage comparator comprises nine metal-oxide-semiconductor M11 ~ M19, the drain electrode of metal-oxide-semiconductor M11 connects the source electrode of metal-oxide-semiconductor M12 and metal-oxide-semiconductor M13, the grid of metal-oxide-semiconductor M12 connects the drain electrode of metal-oxide-semiconductor M1 in temperature sensing circuit, the grid of metal-oxide-semiconductor M13 connects the drain electrode of metal-oxide-semiconductor M9 in temperature sensing circuit, the drain electrode of metal-oxide-semiconductor M12 and the drain interconnection of metal-oxide-semiconductor M14 are also connected to the grid of metal-oxide-semiconductor M14 and the grid of metal-oxide-semiconductor M18, the drain electrode of metal-oxide-semiconductor M13 and the drain interconnection of metal-oxide-semiconductor M15 are also connected to the grid of metal-oxide-semiconductor M15 and the grid of metal-oxide-semiconductor M19, metal-oxide-semiconductor M14, M15, M18, the source grounding of M19, the drain electrode of metal-oxide-semiconductor M18 is with the drain interconnection of metal-oxide-semiconductor M16 and be connected the grid of metal-oxide-semiconductor M16 and metal-oxide-semiconductor M17, the drain electrode of metal-oxide-semiconductor M17 is connected with the drain electrode of metal-oxide-semiconductor M19, metal-oxide-semiconductor M11, M16, the source electrode of M17 all connects supply voltage,
Output Shaping circuit comprises two inverter INV1 and INV2, the output of inverter INV1 connects the input of inverter INV1 and is connected to the grid of metal-oxide-semiconductor M10 in temperature sensing circuit, the input of inverter INV1 connects the drain electrode of metal-oxide-semiconductor M17 and M19 in voltage comparator, and the output of inverter INV2 controls subsequent conditioning circuit.
Metal-oxide-semiconductor M1, M2, M3, M4 in described temperature sensing circuit are NMOS tube, M1 and M2 is operated in sub-threshold region, and M3, M4 are operated in saturation region, and metal-oxide-semiconductor M5, M6, M7, M8 are the PMOS being operated in saturation region.
Advantage of the present invention and remarkable result:
(1) the present invention adopts MOS type thermal-shutdown circuit, does not comprise bipolar transistor, can saving chip area and cost.
(2) the subthreshold value metal-oxide-semiconductor gate source voltage of the present invention's positive temperature coefficient voltage of adopting subthreshold value metal-oxide-semiconductor current source to produce and negative temperature coefficient carries out temperature detection, can reduce because process deviation cause to cross warm spot greatly shifted, improve the stability of circuit.
Accompanying drawing explanation
Fig. 1 is theory diagram of the present invention;
Fig. 2 is a kind of specific implementation circuit diagram of the present invention;
Fig. 3 is the present invention and traditional thermal-shutdown circuit effect contrast figure.
Embodiment
As Fig. 1, circuit of the present invention comprises temperature sensing circuit, voltage comparator and output Shaping circuit, and temperature sensing circuit exports V
pand V
nbe connected to voltage comparator, voltage comparator exports V
obe connected to output Shaping circuit, output Shaping electronic feedback exports V
fBbe connected to temperature sensing circuit, output Shaping circuit produces the output voltage V controlling subsequent conditioning circuit
oUT.
Fig. 2 is a kind of specific implementation circuit of the present invention.Temperature sensing circuit 1 comprises MOS mirror current source and the resistor network of sub-threshold region, is provided with metal-oxide-semiconductor M1, M2, M3, M4, M5, M6, M7, M8, M9, M10, resistance R0, R1, R2.The drain electrode of metal-oxide-semiconductor M1 is connected to node A, and grid is connected to Node B, and source electrode is connected to GND; Resistance R0 is connected between node A and Node B; The drain electrode of metal-oxide-semiconductor M2 is connected to node C, and grid is connected to node A, and source electrode is connected to GND; The drain electrode of metal-oxide-semiconductor M3 is connected to node D, and grid is connected to node D, and source electrode is connected to Node B; The drain electrode of metal-oxide-semiconductor M4 is connected to node E, and grid is connected to node D, and source electrode is connected to node C; The drain electrode of metal-oxide-semiconductor M5 is connected to node D, and grid is connected to node E, and source electrode is connected to node F; The drain electrode of metal-oxide-semiconductor M6 is connected to node E, and grid is connected to node E, and source electrode is connected to node G; The drain electrode of metal-oxide-semiconductor M7 is connected to node F, and grid is connected to node G, and source electrode is connected to VDD; The drain electrode of metal-oxide-semiconductor M8 is connected to node G, and grid is connected to node G, and source electrode is connected to VDD.The drain electrode of metal-oxide-semiconductor M9 is connected to node H, and grid is connected to node G, and source electrode is connected to VDD; Resistance R1 is connected between node H and node I; Resistance R2 is connected between node I and GND; The drain electrode of metal-oxide-semiconductor M10 is connected to node I, and grid is connected to node O, and source electrode is connected to GND.
In temperature sensing circuit 1, be operated in NMOS tube M1 and the M2 of sub-threshold region, be operated in the NMOS tube M3 of saturation region, M4 and PMOS M5, M6, M7, M8 and resistance R0 and form mirror current source.Wherein, be operated in the NMOS tube M1 of sub-threshold region, the gate source voltage of M2 there is negative temperature coefficient, be operated in the NMOS tube M3 of saturation region, M4 can shielded power supply voltage on the impact of M1, M2, be operated in the exact matching of common-source common-gate current mirror realizing circuit of the PMOS M5 of saturation region, M6, M7, M8 composition, produce the electric current be directly proportional to temperature.The resistor network of PMOS M9, resistance R1 and R2, NMOS tube M10 composition is electric current I
pTATconvert the voltage V be directly proportional to temperature to
p, switching tube M10 is by feedback signal V
fBeffect, controlling resistance R2 whether short circuit, realizes lag function.Utilize the gate source voltage V of M2 pipe
nwith voltage V
pcarry out the change of detected temperatures, and as two inputs of voltage comparator.
Voltage comparator 2 can adopt all kinds voltage comparator, what the present invention adopted is push-pull type two-stage voltage comparator, comprise metal-oxide-semiconductor M11, M12, M13, M14, M15, M16, M17, M18, M19, wherein M14, M15, M18, M19 are NMOS tube, M11, M12, M13, M16, M17 are PMOS, and they are all operated in saturation region.The drain electrode of metal-oxide-semiconductor M11 is connected to node K, and grid is connected to node G, and source electrode is connected to VDD; The drain electrode of metal-oxide-semiconductor M12 is connected to node L, and grid is connected to node A, and source electrode is connected to node K; The drain electrode of metal-oxide-semiconductor M13 is connected to node M, and grid is connected to node H, and source electrode is connected to node K; The drain electrode of metal-oxide-semiconductor M14 is connected to node L, and grid is connected to node L, and source electrode is connected to GND; The drain electrode of metal-oxide-semiconductor M15 is connected to node M, and grid is connected to node M, and source electrode is connected to GND; The drain electrode of metal-oxide-semiconductor M16 is connected to node J, and grid is connected to node J, and source electrode is connected to VDD; The drain electrode of metal-oxide-semiconductor M17 is connected to node N, and grid is connected to node J, and source electrode is connected to VDD; The drain electrode of metal-oxide-semiconductor M18 is connected to node J, and grid is connected to node L, and source electrode is connected to GND; The drain electrode of metal-oxide-semiconductor M19 is connected to node N, and grid is connected to node M, and source electrode is connected to GND.
In voltage comparator 2, metal-oxide-semiconductor M11 is as bias source for comparator provides biased, and metal-oxide-semiconductor M12, M13, M14, M15 form the first order of comparator, and M16, M17, M18, M19 form the comparator second level, is exported by both-end and changes into Single-end output V
o, as the input of output Shaping circuit.
Output Shaping circuit 3 comprises two inverters INV1, INV2, and INV1 is connected between node N and node O; INV2 is connected to node O and output V
oUTbetween, V
oUTas output for controlling subsequent conditioning circuit, being changed the comparing voltage value of comparator input by inverter INV1, producing feedback signal V
fBcarry out the shutoff of controllable switch pipe M10, thus realize hysteresis function, prevent from crossing warm spot generation thermal oscillation.
The operation principle of circuit of the present invention and process:
When temperature is very low, the gate source voltage V of metal-oxide-semiconductor M2
nhigh and H point voltage V
plow, after comparator, N point is low, and O point is high, and therefore metal-oxide-semiconductor M10 is unlocked, and resistance R2 is shorted.
When temperature is raised, V
ndecline, V
praise.At both a certain temperature, V
pwill more than V
n, thus making comparator output node N become height, O point becomes low, and excess temperature signal produces, and chip quits work.Now M10 will be turned off, and R1 and R2 connects.
When temperature declines from high-temperature region, because now M10 turns off, R1 and R2 series connection, so now V
pbe greater than V
n.When temperature is reduced to a certain temperature, V
nbe greater than V again
p, now O point is high, and chip normally works.
Fig. 3 is the present invention and traditional thermal-shutdown circuit effect contrast figure; in figure, VREF is reference voltage; VN1 is negative temperature coefficient voltage under normal condition, VN2 is negative temperature coefficient voltage under process deviation, and VP1 is positive temperature coefficient voltage under normal condition, VP2 is positive temperature coefficient voltage under process deviation.Tradition thermal-shutdown circuit adopts VN1 and VREF to compare detected temperatures, normal condition descended warm spot to be the intersection point A of VN1 and VREF, and the temperature of its correspondence is T1, crosses the intersection points B that warm spot is VN1 and VREF during technique generation deviation, its corresponding temperature is the side-play amount of T2, T2 to T1 is Δ T1; The present invention adopts VN1 and VP1 to compare detected temperatures, and normal condition descended warm spot to be the intersection point A of VN1 and VP1, and the temperature of its correspondence is T1, crosses the intersection point C that warm spot is VN1 and VP during technique generation deviation, and its corresponding temperature is the side-play amount of T3, T3 to T1 is Δ T2.As seen from the figure, Δ T2< Δ T1, therefore the present invention can alleviate the warm spot shift phenomenon excessively that process deviation causes well.
The present invention is not limited to above-mentioned execution mode, no matter its way of realization does any change, every employing subthreshold value metal-oxide-semiconductor temperature characterisitic carries out the thermal-shutdown circuit of temperature detection, all drops within scope.
Claims (1)
1. the thermal-shutdown circuit based on subthreshold value metal-oxide-semiconductor, it is characterized in that: be provided with temperature sensing circuit, voltage comparator and output Shaping circuit, temperature sensing circuit exports and is connected to voltage comparator, voltage comparator exports and is connected to output Shaping circuit, output Shaping electronic feedback exports and is connected to temperature sensing circuit, and output Shaping circuit produces the output voltage controlling subsequent conditioning circuit; Wherein:
Temperature sensing circuit comprises ten metal-oxide-semiconductor M1 ~ M10, three resistance R0, R1, R2, one end of drain electrode contact resistance R0 of metal-oxide-semiconductor M1 and the grid of metal-oxide-semiconductor M2, the other end of the grid contact resistance R0 of metal-oxide-semiconductor M1 and with and the source electrode of metal-oxide-semiconductor M3 be connected, the drain electrode of metal-oxide-semiconductor M2 connects the source electrode of metal-oxide-semiconductor M4, the grid of metal-oxide-semiconductor M3 is with the gate interconnection of metal-oxide-semiconductor M4 and be connected the drain electrode of metal-oxide-semiconductor M3 and the drain electrode of metal-oxide-semiconductor M5, the grid of metal-oxide-semiconductor M5 is with the gate interconnection of metal-oxide-semiconductor M6 and be connected the drain electrode of metal-oxide-semiconductor M4 and the drain electrode of metal-oxide-semiconductor M6, the source electrode of metal-oxide-semiconductor M5 connects the drain electrode of metal-oxide-semiconductor M7, the grid of metal-oxide-semiconductor M7, the grid of metal-oxide-semiconductor M8 and the gate interconnection of metal-oxide-semiconductor M9 also connect the drain electrode of metal-oxide-semiconductor M8 and the source electrode of metal-oxide-semiconductor M6, metal-oxide-semiconductor M7, M8, the source electrode of M9 all connects supply voltage, one end of the drain electrode contact resistance R1 of metal-oxide-semiconductor M9, one end of other end contact resistance R2 of R1 and the drain electrode of metal-oxide-semiconductor M10, the other end of resistance R2 and metal-oxide-semiconductor M1, M2, the source grounding of M10, metal-oxide-semiconductor M1, M2, M3, M4 are NMOS tube, M1 and M2 is operated in sub-threshold region, and M3, M4 are operated in saturation region, and metal-oxide-semiconductor M5, M6, M7, M8 are the PMOS being operated in saturation region,
Voltage comparator comprises nine metal-oxide-semiconductor M11 ~ M19, the drain electrode of metal-oxide-semiconductor M11 connects the source electrode of metal-oxide-semiconductor M12 and metal-oxide-semiconductor M13, the grid of metal-oxide-semiconductor M12 connects the drain electrode of metal-oxide-semiconductor M1 in temperature sensing circuit, the grid of metal-oxide-semiconductor M13 connects the drain electrode of metal-oxide-semiconductor M9 in temperature sensing circuit, the drain electrode of metal-oxide-semiconductor M12 and the drain interconnection of metal-oxide-semiconductor M14 are also connected to the grid of metal-oxide-semiconductor M14 and the grid of metal-oxide-semiconductor M18, the drain electrode of metal-oxide-semiconductor M13 and the drain interconnection of metal-oxide-semiconductor M15 are also connected to the grid of metal-oxide-semiconductor M15 and the grid of metal-oxide-semiconductor M19, metal-oxide-semiconductor M14, M15, M18, the source grounding of M19, the drain electrode of metal-oxide-semiconductor M18 is with the drain interconnection of metal-oxide-semiconductor M16 and be connected the grid of metal-oxide-semiconductor M16 and metal-oxide-semiconductor M17, the drain electrode of metal-oxide-semiconductor M17 is connected with the drain electrode of metal-oxide-semiconductor M19, metal-oxide-semiconductor M11, M16, the source electrode of M17 all connects supply voltage,
Output Shaping circuit comprises two inverter INV1 and INV2, the output of inverter INV1 connects the input of inverter INV2 and is connected to the grid of metal-oxide-semiconductor M10 in temperature sensing circuit, the input of inverter INV1 connects the drain electrode of metal-oxide-semiconductor M17 and M19 in voltage comparator, and the output of inverter INV2 controls subsequent conditioning circuit.
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| CN201210545358.3A CN103050940B (en) | 2012-12-14 | 2012-12-14 | A kind of thermal-shutdown circuit based on subthreshold value metal-oxide-semiconductor |
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| CN201210545358.3A CN103050940B (en) | 2012-12-14 | 2012-12-14 | A kind of thermal-shutdown circuit based on subthreshold value metal-oxide-semiconductor |
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Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI497856B (en) * | 2013-05-15 | 2015-08-21 | Himax Tech Ltd | Over temperature protection circuit and method thereof |
| CN104111688B (en) * | 2014-05-13 | 2016-04-13 | 西安电子科技大学昆山创新研究院 | A kind of BiCMOS with temperature-monitoring function is without amplifier band gap voltage reference source |
| CN104362585B (en) * | 2014-10-31 | 2017-02-15 | 无锡中感微电子股份有限公司 | Over-temperature protection circuit |
| CN104679092B (en) * | 2015-01-29 | 2016-04-06 | 电子科技大学 | The excess temperature delay protection circuit of wide power voltage |
| CN104967095B (en) * | 2015-07-29 | 2018-01-19 | 电子科技大学 | Thermal-shutdown circuit |
| CN104967094B (en) * | 2015-07-29 | 2018-01-09 | 电子科技大学 | A kind of thermal-shutdown circuit |
| CN108664073B (en) * | 2017-03-31 | 2020-10-09 | 中芯国际集成电路制造(上海)有限公司 | Detection circuit |
| CN108107344B (en) * | 2017-12-05 | 2020-07-14 | 武汉英弗耐斯电子科技有限公司 | Overheat protection circuit suitable for IGBT driver chip |
| CN111879999B (en) * | 2020-07-31 | 2023-03-14 | 东南大学 | Low-temperature coefficient rapid voltage detection circuit |
| CN114185387B (en) * | 2021-10-25 | 2023-04-18 | 西安电子科技大学芜湖研究院 | Low-power-consumption over-temperature protection circuit based on current comparator |
| CN115855289B (en) * | 2023-02-14 | 2023-05-02 | 晶艺半导体有限公司 | Temperature detection module and over-temperature protection circuit |
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| CN101178608A (en) * | 2007-12-07 | 2008-05-14 | 南京大学 | Low-dropout voltage regulator having temperature proctive circuit |
| CN101943613A (en) * | 2009-07-03 | 2011-01-12 | 飞思卡尔半导体公司 | Sub-threshold CMOS temperature detector |
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| US7514998B2 (en) * | 2005-12-07 | 2009-04-07 | California Institute Of Technology | Wide-temperature integrated operational amplifier |
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| CN101178608A (en) * | 2007-12-07 | 2008-05-14 | 南京大学 | Low-dropout voltage regulator having temperature proctive circuit |
| CN101943613A (en) * | 2009-07-03 | 2011-01-12 | 飞思卡尔半导体公司 | Sub-threshold CMOS temperature detector |
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