CN203313145U - Low-power rapid-starting circuit and current source - Google Patents
Low-power rapid-starting circuit and current source Download PDFInfo
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- CN203313145U CN203313145U CN2013203308960U CN201320330896U CN203313145U CN 203313145 U CN203313145 U CN 203313145U CN 2013203308960 U CN2013203308960 U CN 2013203308960U CN 201320330896 U CN201320330896 U CN 201320330896U CN 203313145 U CN203313145 U CN 203313145U
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- pmos pipe
- access node
- pipe
- node
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Abstract
The utility model discloses a low-power rapid starting circuit and a current source. The starting circuit comprises a PMOS pipe M1, an NMOS pipe M2, a PMOS pipe M5, a PMOS pipe M6 and a current mirror unit, and the current source comprises the starting circuit and a current source unit. The entire starting circuit requires only six small MOS pipes, and is simple in structure. Compared with other starting circuit, the starting circuit saves chip area and ensures high operation reliability and rapid starting. Once the current source unit works normally, the live MOS pipes instantly raises the VDD/2 electric potential point to a high potential VDD, thereby turning off the starting circuit. The entire starting up and turning off process is quiet short, and maximally reaches to a nanosecond level. The starting time can be adjusted according to the needs of an electronic system. After the system enters into a stable work state, the picowatt static power consumption is required by the starting circuit only.
Description
Technical field
The utility model relates to the quick start-up circuit of a kind of low-power consumption and current source, belongs to the integrated circuit (IC) design technology.
Background technology
The every field of electronics, electrical engineering has been goed deep in the requirement of low-power consumption, and after the electronic system normal operation, some start-up circuits still need larger quiescent dissipation, do not meet the requirement of low-power consumption.The reliability of start-up circuit is most important for the impact of whole electronic system, and no matter how powerful function is for an electronic system, if the start-up circuit reliability in system is unstable, electronic system is difficult to normal operation so, can not give play to due effect.
Resistance, electric capacity are compared common metal-oxide-semiconductor in integrated circuit technology, need larger chip area, the corresponding cost that increases whole chip.Realize said function, under the constant prerequisite of performance, if can avoid, use resistance, electric capacity, can saving chip area, reduce chip cost.
The utility model content
Goal of the invention: in order to overcome the deficiencies in the prior art, the utility model provides the quick start-up circuit of a kind of low-power consumption and current source, solve present start-up circuit toggle speed slow and after the electronic system normal operation, still produce the problem of larger quiescent dissipation, save simultaneously chip area, reduce costs.
Technical scheme: for achieving the above object, the technical solution adopted in the utility model is:
The quick start-up circuit of a kind of low-power consumption, comprise PMOS pipe M1, NMOS pipe M2, PMOS pipe M5, PMOS pipe M6 and current lens unit, and described current lens unit comprises NMOS pipe M3 and NMOS pipe M4:
The source electrode of the grid of the substrate of described PMOS pipe M1, PMOS pipe M1 and PMOS pipe M1 meets DC power supply VDD, the drain electrode access node 1 of described PMOS pipe M1;
The source ground GND of the grid of the substrate of described NMOS pipe M2, NMOS pipe M2 and NMOS pipe M2, the drain electrode access node 1 of described NMOS pipe M2;
The grid access node 3 of described NMOS pipe M3, the source ground GND of described NMOS pipe M3, the drain electrode of described NMOS pipe M3 is as the first output of this start-up circuit;
The grid access node 3 of described metal-oxide-semiconductor M4, the source ground GND of described NMOS pipe M4, the drain electrode access node 4 of described metal-oxide-semiconductor M4;
The grid of described PMOS pipe M5 is as the second output of this start-up circuit, and the source electrode of described PMOS pipe M5 meets DC power supply VDD, the drain electrode access node 2 of described PMOS pipe M5;
The grid access node 2 of described PMOS pipe M6, the source electrode of described PMOS pipe M6 meets DC power supply VDD, the drain electrode access node 4 of PMOS pipe M6;
Described node 1 and node 2 join, and described node 3 and node 4 join.
During use, the first output and the second output are accessed respectively in the two ends that are activated circuit module.
A kind of current source, it comprises the quick start-up circuit of above-mentioned low-power consumption and current source cell, described current source cell comprises PMOS pipe M7, PMOS pipe M8, NPN triode Q9, NPN triode Q10, resistance R 1 and PMOS pipe M11:
The grid access node 5 of described PMOS pipe M7, the source electrode of described PMOS pipe M7 meets DC power supply VDD, the drain electrode access node 7 of described PMOS pipe M7;
The grid access node 5 of described PMOS pipe M8, the source electrode of described PMOS pipe M8 meets DC power supply VDD, the drain electrode access node 8 of described PMOS pipe M8;
The base stage access node 6 of described NPN triode Q9, the grounded emitter GND of described NPN triode Q9, the collector electrode access node 7 of described NPN triode Q9;
The base stage access node 6 of described NPN triode Q10, the emitter of described NPN triode Q10 is by resistance R 1 ground connection GND, the collector electrode access node 9 of described NPN triode Q10;
The grid access node 5 of described PMOS pipe M11, the source electrode of described PMOS pipe M11 meets DC power supply VDD, and the drain electrode of described PMOS pipe M11 connects the output as this current source;
Described node 5 and node 8 join, and described node 6 and node 7 join;
The first output access node 9 of described start-up circuit, the second output access node 5 of described start-up circuit.
The quick start-up circuit of the low-power consumption that this case provides and current source, whole start-up circuit only needs the metal-oxide-semiconductor of 6 small sizes, simple in structure, compares other start-up circuits, has saved chip area; Operational reliability is high, can start fast, as long as after the current source cell normal operation, metal-oxide-semiconductor moment of conducting can lift the VDD/2 potential point to high potential VDD, thereby the shutoff start-up circuit, whole startup, turn off process are of short duration, can reach nanosecond the soonest, and can, according to the needs of electronic system, adjust start-up time; After system entered steady-working state, start-up circuit only needed micromicrowatt level quiescent dissipation.
Beneficial effect: the quick start-up circuit of the low-power consumption that the utility model provides and current source, realized the requirement of start-up circuit low-power consumption, after electronic system was stable, start-up circuit only needed the quiescent dissipation of micromicrowatt magnitude (pW); Operational reliability is high, and, according to the needs of electronic system, adjusts start-up time; Simple in structure, do not need especially resistance, electric capacity, compare other start-up circuits, saved chip area, reduced cost.
The accompanying drawing explanation
Fig. 1 is the structural representation based on a kind of start-up circuit of the present utility model;
Fig. 2 is the structural representation based on a kind of current source of the present utility model.
Embodiment
Below in conjunction with accompanying drawing, the utility model is further described.
Be illustrated in figure 1 the quick start-up circuit 100 of a kind of low-power consumption, comprise PMOS pipe M1, NMOS pipe M2, PMOS pipe M5, PMOS pipe M6 and current lens unit, described current lens unit comprises NMOS pipe M3 and NMOS pipe M4:
The source electrode of the grid of the substrate of described PMOS pipe M1, PMOS pipe M1 and PMOS pipe M1 meets DC power supply VDD, the drain electrode access node 1 of described PMOS pipe M1;
The source ground GND of the grid of the substrate of described NMOS pipe M2, NMOS pipe M2 and NMOS pipe M2, the drain electrode access node 1 of described NMOS pipe M2;
The grid access node 3 of described NMOS pipe M3, the source ground GND of described NMOS pipe M3, the drain electrode of described NMOS pipe M3 is as the first output of this start-up circuit;
The grid access node 3 of described metal-oxide-semiconductor M4, the source ground GND of described NMOS pipe M4, the drain electrode access node 4 of described metal-oxide-semiconductor M4;
The grid of described PMOS pipe M5 is as the second output of this start-up circuit, and the source electrode of described PMOS pipe M5 meets DC power supply VDD, the drain electrode access node 2 of described PMOS pipe M5;
The grid access node 2 of described PMOS pipe M6, the source electrode of described PMOS pipe M6 meets DC power supply VDD, the drain electrode access node 4 of PMOS pipe M6;
Described node 1 and node 2 join, and described node 3 and node 4 join.
During use, the first output and the second output are accessed respectively in the two ends that are activated circuit module 200.
Be illustrated in figure 2 a kind of current source, comprise as shown in Figure 1 start-up circuit 100 and current source cell 300, described current source cell 300 comprises PMOS pipe M7, PMOS pipe M8, NPN triode Q9, NPN triode Q10, resistance R 1 and PMOS pipe M11;
The grid access node 5 of described PMOS pipe M7, the source electrode of described PMOS pipe M7 meets DC power supply VDD, the drain electrode access node 7 of described PMOS pipe M7;
The grid access node 5 of described PMOS pipe M8, the source electrode of described PMOS pipe M8 meets DC power supply VDD, the drain electrode access node 8 of described PMOS pipe M8;
The base stage access node 6 of described NPN triode Q9, the grounded emitter GND of described NPN triode Q9, the collector electrode access node 7 of described NPN triode Q9;
The base stage access node 6 of described NPN triode Q10, the emitter of described NPN triode Q10 is by resistance R 1 ground connection GND, the collector electrode access node 9 of described NPN triode Q10;
The grid access node 5 of described PMOS pipe M11, the source electrode of described PMOS pipe M11 meets DC power supply VDD, and the drain electrode of described PMOS pipe M11 connects the output as this current source;
Described node 5 and node 8 join, and described node 6 and node 7 join;
The first output access node 9 of described start-up circuit, the second output access node 5 of described start-up circuit.
The current source shown in Figure 2 of below take is example, and the operation principle of whole electronic system is described.
In this example, current source cell 300 is a PTAT(Proportional To Absolute Temperature, is directly proportional to absolute temperature) current source, it has two states: normal operating conditions and zero current stable state.When being in normal operating conditions, the electric current that PMOS pipe M7, PMOS pipe M8, NPN triode Q9, NPN triode Q10 and resistance R 1 flow through
I
PTATTo absolute temperature, be directly proportional, wherein the N value is NPN triode Q10 and the ratio of NPN triode Q9 emitter area; And when node 6 are electronegative potentials, when simultaneously node 5 is for high potential, whole PTAT current source 300 maintains the zero current stable state, I
PTAT=0, now need to break from start-up circuit 100 Injection Currents the balance of this zero current stable state.
Now, node 5 is high potentials, the PMOS pipe M5 cut-off of start-up circuit 100, because the substrate of the source electrode of the grid of PMOS pipe M1, PMOS pipe M1 and PMOS pipe M1 is connected to DC power supply VDD, the substrate of the source electrode of the grid of NMOS pipe M2, NMOS pipe M2 and NMOS pipe M2 is ground connection all, this branch road only has the electric current of skin peace (pA) magnitude, so now the current potential of node 1 is VDD/2.Therefore, PMOS pipe M6 conducting, the electric current produced is by current mirror (M4 forms by NMOS pipe M3, NMOS pipe), to PMOS pipe M8, extract electric current thus, node 5 is that the stable state of high potential is broken, and by other two current mirrors (consists of NPN triode Q9 and NPN triode Q10, and another consists of PMOS pipe M7 and PMOS pipe M8), carries out the clockwise transmission of electric current thereupon, whole PTAT current source 300 is started working, and the zero current poised state is broken.
After PTAT current source 300 broke away from the zero current stable state, PMOS pipe M5 conducting, lifted node 1 current potential to high potential, PMOS pipe Q6 cut-off, and whole start-up circuit cuts out, and only consumes micromicrowatt level (pW) static power.
On the other hand, by adjusting the breadth length ratio of PMOS pipe M6, can adjust the drain-source current after PMOS manages the M6 conducting,
If PMOS pipe M6 gate source voltage V
GS6Necessarily, breadth length ratio is larger, drain-source current I
DS6Larger, the starting current that is injected into the current source cell 300 that is directly proportional to absolute temperature is also larger, and the corresponding toggle speed of current source is just faster, thereby reaches the purpose of regulating start-up time.The whole start-up course of this start-up circuit 100 can reach nanosecond the soonest, and operational reliability is high.
The key point of this case is to utilize NMOS tube grid, source electrode and substrate ground connection, the gate pmos utmost point, source electrode and substrate and DC power supply VDD join, thereby build the electromotive force of an about VDD/2, when the PTAT current source is in the zero current stable state, the VDD/2 electromotive force is added to the gate pmos utmost point and generation current is injected into the PTAT current source that is in the zero current stable state, the zero current poised state in break current source; After the normal operation of PTAT current source, by the PMOS pipe of conducting, the VDD/2 potential point is lifted to high potential VDD, thereby make the cut-off of PMOS pipe, turn-off start-up circuit 100, start-up circuit 100 only needs to consume the static power of micromicrowatt level.
The whole start-up circuit that this case provides only needs the metal-oxide-semiconductor of 6 small sizes, simple in structure, compares other start-up circuits, has saved chip area; Operational reliability is high, can start fast, as long as after the current source cell normal operation, thereby the metal-oxide-semiconductor of conducting can be lifted the VDD/2 potential point to high potential VDD shutoff start-up circuit, whole startup, turn off process are of short duration, can reach nanosecond the soonest, and can, according to the needs of electronic system, adjust start-up time; After system entered steady-working state, start-up circuit only needed micromicrowatt level quiescent dissipation.
The above is only preferred implementation of the present utility model; be noted that for those skilled in the art; under the prerequisite that does not break away from the utility model principle; can also make some improvements and modifications, these improvements and modifications also should be considered as protection range of the present utility model.
Claims (2)
1. quick start-up circuit of low-power consumption is characterized in that: comprise PMOS pipe M1, NMOS pipe M2, PMOS pipe M5, PMOS pipe M6 and current lens unit, described current lens unit comprises NMOS pipe M3 and NMOS pipe M4:
The source electrode of the grid of the substrate of described PMOS pipe M1, PMOS pipe M1 and PMOS pipe M1 meets DC power supply VDD, the drain electrode access node 1 of described PMOS pipe M1;
The source ground GND of the grid of the substrate of described NMOS pipe M2, NMOS pipe M2 and NMOS pipe M2, the drain electrode access node 1 of described NMOS pipe M2;
The grid access node 3 of described NMOS pipe M3, the source ground GND of described NMOS pipe M3, the drain electrode of described NMOS pipe M3 is as the first output of this start-up circuit;
The grid access node 3 of described metal-oxide-semiconductor M4, the source ground GND of described NMOS pipe M4, the drain electrode access node 4 of described metal-oxide-semiconductor M4;
The grid of described PMOS pipe M5 is as the second output of this start-up circuit, and the source electrode of described PMOS pipe M5 meets DC power supply VDD, the drain electrode access node 2 of described PMOS pipe M5;
The grid access node 2 of described PMOS pipe M6, the source electrode of described PMOS pipe M6 meets DC power supply VDD, the drain electrode access node 4 of PMOS pipe M6;
Described node 1 and node 2 join, and described node 3 and node 4 join.
2. current source is characterized in that: comprise the quick start-up circuit of low-power consumption claimed in claim 1 and current source cell, described current source cell comprises PMOS pipe M7, PMOS pipe M8, NPN triode Q9, NPN triode Q10, resistance R 1 and PMOS pipe M11:
The grid access node 5 of described PMOS pipe M7, the source electrode of described PMOS pipe M7 meets DC power supply VDD, the drain electrode access node 7 of described PMOS pipe M7;
The grid access node 5 of described PMOS pipe M8, the source electrode of described PMOS pipe M8 meets DC power supply VDD, the drain electrode access node 8 of described PMOS pipe M8;
The base stage access node 6 of described NPN triode Q9, the grounded emitter GND of described NPN triode Q9, the collector electrode access node 7 of described NPN triode Q9;
The base stage access node 6 of described NPN triode Q10, the emitter of described NPN triode Q10 is by resistance R 1 ground connection GND, the collector electrode access node 9 of described NPN triode Q10;
The grid access node 5 of described PMOS pipe M11, the source electrode of described PMOS pipe M11 meets DC power supply VDD, and the drain electrode of described PMOS pipe M11 is as the output of this current source;
Described node 5 and node 8 join, and described node 6 and node 7 join;
The first output access node 9 of described start-up circuit, the second output access node 5 of described start-up circuit.
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CN2013203308960U CN203313145U (en) | 2013-06-07 | 2013-06-07 | Low-power rapid-starting circuit and current source |
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CN2013203308960U CN203313145U (en) | 2013-06-07 | 2013-06-07 | Low-power rapid-starting circuit and current source |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103269216A (en) * | 2013-06-07 | 2013-08-28 | 东南大学 | Quick starting circuit with low power consumption, and current source |
CN104615185A (en) * | 2015-01-13 | 2015-05-13 | 深圳市德赛微电子技术有限公司 | Starting circuit of reference voltage source |
-
2013
- 2013-06-07 CN CN2013203308960U patent/CN203313145U/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103269216A (en) * | 2013-06-07 | 2013-08-28 | 东南大学 | Quick starting circuit with low power consumption, and current source |
CN104615185A (en) * | 2015-01-13 | 2015-05-13 | 深圳市德赛微电子技术有限公司 | Starting circuit of reference voltage source |
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Legal Events
Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CB03 | Change of inventor or designer information |
Inventor after: Luo Xianliang Inventor before: Chen Yingmei Inventor before: Luo Xianliang |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20131127 Termination date: 20160607 |
|
CF01 | Termination of patent right due to non-payment of annual fee |