CN102611292B - Starting circuit and current source with same - Google Patents
Starting circuit and current source with same Download PDFInfo
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- CN102611292B CN102611292B CN201210061553.9A CN201210061553A CN102611292B CN 102611292 B CN102611292 B CN 102611292B CN 201210061553 A CN201210061553 A CN 201210061553A CN 102611292 B CN102611292 B CN 102611292B
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- nmos tube
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Abstract
The invention relates to the field of integrated circuit design, in particular to a starting circuit and a current source with the same. In the embodiment, the whole starting circuit only needs six MOS (metal oxide semiconductor) tubes with small area, thereby being simple in structure. Compared with other starting circuits, the starting circuit has the advantages that the area of chips is reduced, the starting circuit is high in operating reliability and can be quickly started, the conductive MOS tubes can pull a suspension potential point to low potential to switch off the starting circuit only after a current source unit is in normal operation, so that the whole starting and switch-off process is short, and nanosecond scale can be reached at the soonest, starting time can be regulated according to needs of an electronic system, and the starting circuit does not need static power consumption after the system enters a stable operation state.
Description
Technical field
The present invention relates to IC design field, particularly relate to the current source of a kind of start-up circuit and tool start-up circuit.
Background technology
Start-up circuit is as ensureing the required functional module that electronic system normally works, and the speed of its operating rate decides the speed of whole electronic system startup.Present electronic system more voluminous, start-up time not only by the restriction of whole system, but also is subject to the impact of the start-up circuit speed of service, and start-up circuit responds fast, greatly reduces the start-up time of whole system.No matter how powerful function is for an electronic system, if start-up circuit reliability of operation is not good enough, so electronic system is difficult to normal work, can not give play to due effect.
Nowadays, the every field of electrical engineering has been goed deep in the requirement of low-power consumption, and after electronic system normally works, more existing start-up circuits still need quiescent dissipation, and do not meet the requirement of low-power consumption.
On the other hand, resistance, electric capacity compare common metal-oxide-semiconductor in integrated circuit technology, need larger chip area, correspondingly too increase the cost of whole chip.Therefore circuit module is realizing under the constant prerequisite of identical function, performance, if can avoid or use resistance and electric capacity as few as possible, just can realize saving chip area, reduction chip cost.
Summary of the invention
The object of the present invention is to provide a kind of start-up circuit, it is comparatively slow and after electronic system normally works, still produce the problem of quiescent dissipation to be intended to solve present start-up circuit toggle speed, saves chip area simultaneously, reduces costs.
The present invention is achieved in that
A kind of start-up circuit, be connected with the circuit module be activated, described start-up circuit comprises: PMOS M1, NMOS tube M2, NMOS tube M5, NMOS tube M6 and current lens unit; Wherein, described current lens unit is made up of PMOS M3 and PMOS M4;
The grid of described PMOS M1, source electrode and substrate all connect dc source, the drain electrode of described PMOS M1 connects the drain electrode of described NMOS tube M2 simultaneously, the grid of described NMOS tube M5 and the drain electrode of described NMOS tube M6, the grid of described NMOS tube M2, source electrode and substrate all ground connection, the source electrode of described PMOS M3 and described PMOS M4 all connects dc source, connect with the grid of described PMOS M4 after the grid of described PMOS M3 and drain electrode connect altogether, the drain electrode of described PMOS M3 also connects the drain electrode of described NMOS tube M5, the drain electrode of described PMOS M4 exports described in termination as first of described start-up circuit and is activated circuit module, the grid of described NMOS tube M5 connects the grid of described NMOS tube M6, source electrode all ground connection of described NMOS tube M5 and described NMOS tube M6, the grid of described NMOS tube M6 exports as second of described start-up circuit the circuit module be activated described in termination.
The present invention also aims to provide a kind of current source comprising above-mentioned start-up circuit.Described current source also comprises: PMOS M7, PMOS M8, NMOS tube M9, NMOS tube M10, PMOS M11, PNP triode Q1, PNP triode Q2 and resistance R1;
Described PMOS M7, the source electrode of described PMOS M8 and described PMOS M11 all connects dc source, the grid of described PMOS M8 meets rear and described PMOS M7 altogether with drain electrode, the grid of described PMOS M11 links together, the drain electrode of described PMOS M11 is the output of described current source, the drain electrode of described PMOS M7 and described NMOS tube M9 connects the first output of above-mentioned start-up circuit simultaneously, the drain electrode of described PMOS M8 connects the drain electrode of described NMOS tube M10, grid and the drain electrode of described NMOS tube M9 connect the second output that grid that is rear and described NMOS tube M10 connects above-mentioned start-up circuit simultaneously altogether, the source electrode of described NMOS tube M9 connects the emitter stage of described PNP triode Q1, the source electrode of described NMOS tube M10 connects the emitter stage of described PNP triode Q2 by described resistance R1, the base stage of described PNP triode Q1, the base stage of colelctor electrode and described PNP triode Q2, colelctor electrode is ground connection all.
Start-up circuit provided by the invention only needs the metal-oxide-semiconductor of 6 small sizes, and structure is simple, compares other start-up circuits, saves chip area; Operational reliability is high, can start fast, and can according to the needs of electronic system, and adjust start-up time, after electronic system enters steady-working state, start-up circuit is more without the need to quiescent dissipation.
Accompanying drawing explanation
Fig. 1 is the circuit structure diagram of the start-up circuit that the embodiment of the present invention provides;
Fig. 2 is the circuit structure diagram with the current source of start-up circuit shown in Fig. 1 that the embodiment of the present invention provides.
Detailed description of the invention
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
Fig. 1 is the circuit structure diagram of the start-up circuit that the embodiment of the present invention provides, and for convenience of explanation, illustrate only the part relevant to the embodiment of the present invention.As shown in the figure:
A kind of start-up circuit 100, be connected with the circuit module 200 be activated, start-up circuit 100 comprises: PMOS M1, NMOS tube M2, NMOS tube M5, NMOS tube M6 and current lens unit; Wherein, current lens unit is made up of PMOS M3 and PMOS M4;
The grid of PMOS M1, source electrode and substrate all meet dc source VDD, the drain electrode of PMOS M1 connects the drain electrode of NMOS tube M2 simultaneously, the grid of NMOS tube M5 and the drain electrode of NMOS tube M6, the grid of NMOS tube M2, source electrode and substrate all ground connection, the source electrode of PMOS M3 and PMOS M4 all meets dc source VDD, connect with the grid of PMOS M4 after the grid of PMOS M3 and drain electrode connect altogether, the drain electrode of PMOS M3 also connects the drain electrode of NMOS tube M5, the drain electrode of PMOS M4 exports termination as first of start-up circuit 100 and is activated circuit module 200, the grid of NMOS tube M5 connects the grid of NMOS tube M6, source electrode all ground connection of NMOS tube M5 and NMOS tube M6, the grid of NMOS tube M6 exports as second of start-up circuit 100 circuit module 200 that termination is activated.
Fig. 2 shows the circuit structure with the current source of above-mentioned start-up circuit that the embodiment of the present invention provides, and for convenience of explanation, illustrate only the part relevant to the embodiment of the present invention.As shown in the figure:
A start-up circuit 100 ' be made up of PMOS M1, NMOS tube M2, NMOS tube M5, NMOS tube M6 and current lens unit, and
A current source cell 300 comprising PMOS M7, PMOS M8, NMOS tube M9, NMOS tube M10, PMOS M11, PNP triode Q1, PNP triode Q2 and resistance R1;
Wherein, the current lens unit of start-up circuit 100 ' is made up of PMOS M3 and PMOS M4, the grid of PMOS M1, source electrode and substrate all meet dc source VDD, the drain electrode of PMOS M1 connects the drain electrode of NMOS tube M2 simultaneously, the grid of NMOS tube M5 and the drain electrode of NMOS tube M6, the grid of NMOS tube M2, source electrode and substrate all ground connection, the source electrode of PMOS M3 and PMOS M4 all meets dc source VDD, connect with the grid of PMOS M4 after the grid of PMOS M3 and drain electrode connect altogether, the drain electrode of PMOS M3 also connects the drain electrode of NMOS tube M5, the drain electrode of PMOS M4 connects the PMOS M7 of current source cell 300 and the drain electrode of NMOS tube M9 as the first output of start-up circuit 100 ' simultaneously, the grid of NMOS tube M5 connects the grid of NMOS tube M6, source electrode all ground connection of NMOS tube M5 and NMOS tube M6, the grid of NMOS tube M6 connects the grid of the NMOS tube M9 of current source cell 300 as the second output of start-up circuit 100 ' simultaneously, the grid of drain electrode and NMOS tube M10,
PMOS M7, the source electrode of PMOS M8 and PMOS M11 all meets dc source VDD, the grid of PMOS M8 meets rear and PMOS M7 altogether with drain electrode, the grid of PMOS M11 links together, the drain electrode of PMOS M11 is the output of current source, the drain electrode of PMOS M7 and NMOS tube M9 connects the first output of start-up circuit 100 ' simultaneously, the drain electrode of PMOS M8 connects the drain electrode of NMOS tube M10, grid and the drain electrode of NMOS tube M9 connect the second output that grid that is rear and NMOS tube M10 connects start-up circuit 100 ' simultaneously altogether, the source electrode of NMOS tube M9 connects the emitter stage of PNP triode Q1, the source electrode of NMOS tube M10 connects the emitter stage of PNP triode Q2 by resistance R1, the base stage of PNP triode Q1, the base stage of colelctor electrode and PNP triode Q2, colelctor electrode is ground connection all.
Below for the current source shown in Fig. 2, the operation principle of whole electronic system is described.Current source cell 300 is a PTAT (Proportional To Absolute Temperature, with PTAT) current source, and it has two states: normal operating conditions and zero current stable state.When being in normal operating conditions, the electric current I that PMOS M7, PMOS M8, NMOS tube M9, NMOS tube M10, PNP pipe Q1, PNP pipe Q2 and resistance R1 flow through
pTAT=V
tln (N)/R1, I
pTATwith PTAT; And when node 2 be electronegative potential, node 3 for high potential time, whole PTAT current source 300 maintains zero current stable state, I
pTAT=0, now need the balance breaking this zero current stable state from start-up circuit 100 ' Injection Current.
Now, node 2 is electronegative potentials, the NMOS tube M6 cut-off of start-up circuit 100 ', because the grid of PMOS M1, source electrode and substrate are connected to VDD, the grid of NMOS tube M2, source electrode and substrate all ground connection, this branch road does not have electric current, so node 1 is in suspended state, the now current potential of node 1
therefore, NMOS tube M5 conducting produce electric current by current mirror (being made up of PMOS M3, PMOS M4) to NMOS tube M9 Injection Current, node 2 is that the stable state of electronegative potential is broken, by other two current mirrors, (one is made up of NMOS tube M9 and NMOS tube M10 thereupon, another is made up of PMOS M7 and PMOS M8) carry out the clockwise transmission of electric current, whole PTAT current source 300 is started working, and zero current poised state is broken.
After PTAT current source 300 departs from zero current stable state, NMOS tube M6 conducting, is pulled to electronegative potential by node 1, and NMOS tube M5 ends, and whole start-up circuit cuts out, and does not have electric current, does not also just consume static power.
On the other hand, by adjusting the breadth length ratio of NMOS tube M5, (gate source voltage V after NMOS tube M5 conducting can be adjusted
gS5necessarily,
) drain-source current I
dS5.If NMOS tube M5 gate source voltage V
gS5necessarily, breadth length ratio is larger, then drain-source current I
dS5larger, be injected into the starting current of PTAT current source unit 300 also larger, the corresponding toggle speed of current source is faster, thus reaches the object regulating start-up time.The whole start-up course of this start-up circuit 100 ' can reach nanosecond the soonest, and operational reliability is high.
Key problem in technology point of the present invention utilizes NMOS tube grid, source electrode and Substrate ground, and PMOS grid, source electrode and substrate connect with dc source VDD, thus structure one is about
floating potential, when PTAT current source is in zero current stable state,
electromotive force is added to NMOS tube grid and generation current is injected into the PTAT current source being in zero current stable state, the zero current poised state in break current source; After PTAT current source normally works, by the NMOS tube of conducting, floating potential point is pulled to electronegative potential, thus NMOS tube is ended, turn off start-up circuit 100 ', start-up circuit 100 ' does not just consume static power.
The whole start-up circuit that the embodiment of the present invention provides only needs the metal-oxide-semiconductor of 6 small sizes, and structure is simple, compares other start-up circuits, saves chip area; Operational reliability is high, can start fast, as long as after current source cell normally works, floating potential point can be pulled to electronegative potential thus turn off start-up circuit by the metal-oxide-semiconductor moment of conducting, whole startup, turn off process are of short duration, nanosecond can be reached the soonest, and according to the needs of electronic system, start-up time can be adjusted; After system enters steady-working state, start-up circuit is more without the need to quiescent dissipation.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, although with reference to previous embodiment to invention has been comparatively detailed description, for a person skilled in the art, it still can be modified to the technical scheme described in foregoing embodiments or carry out equivalent replacement to wherein portion of techniques feature.All any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (2)
1. a start-up circuit, is connected with the circuit module be activated, it is characterized in that, described start-up circuit comprises: PMOS M1, NMOS tube M2, NMOS tube M5, NMOS tube M6 and current lens unit; Wherein, described current lens unit is made up of PMOS M3 and PMOS M4;
The grid of described PMOS M1, source electrode and substrate all connect dc source, the drain electrode of described PMOS M1 connects the drain electrode of described NMOS tube M2 simultaneously, the grid of described NMOS tube M5 and the drain electrode of described NMOS tube M6, the grid of described NMOS tube M2, source electrode and substrate all ground connection, the source electrode of described PMOS M3 and described PMOS M4 all connects dc source, connect with the grid of described PMOS M4 after the grid of described PMOS M3 and drain electrode connect altogether, the drain electrode of described PMOS M3 also connects the drain electrode of described NMOS tube M5, the drain electrode of described PMOS M4 exports described in termination as first of described start-up circuit and is activated circuit module, source electrode all ground connection of described NMOS tube M5 and described NMOS tube M6, the grid of described NMOS tube M6 exports as second of described start-up circuit the circuit module be activated described in termination.
2. have a current source for start-up circuit, it is characterized in that, described current source comprises:
A start-up circuit be made up of PMOS M1, NMOS tube M2, NMOS tube M5, NMOS tube M6 and current lens unit, and
A current source cell comprising PMOS M7, PMOS M8, NMOS tube M9, NMOS tube M10, PMOS M11, PNP triode Q1, PNP triode Q2 and resistance R1;
Wherein, the current lens unit of described start-up circuit is made up of PMOS M3 and PMOS M4, the grid of described PMOS M1, source electrode and substrate all connect dc source, the drain electrode of described PMOS M1 connects the drain electrode of described NMOS tube M2 simultaneously, the grid of described NMOS tube M5 and the drain electrode of described NMOS tube M6, the grid of described NMOS tube M2, source electrode and substrate all ground connection, the source electrode of described PMOS M3 and described PMOS M4 all connects dc source, connect with the grid of described PMOS M4 after the grid of described PMOS M3 and drain electrode connect altogether, the drain electrode of described PMOS M3 also connects the drain electrode of described NMOS tube M5, the drain electrode of described PMOS M4 connects the PMOS M7 of described current source cell and the drain electrode of NMOS tube M9 as the first output of described start-up circuit simultaneously, source electrode all ground connection of described NMOS tube M5 and described NMOS tube M6, the grid of described NMOS tube M6 connects the grid of the NMOS tube M9 of described current source cell as the second output of described start-up circuit simultaneously, the grid of drain electrode and described NMOS tube M10,
Described PMOS M7, the source electrode of described PMOS M8 and described PMOS M11 all connects dc source, the grid of described PMOS M8 meets rear and described PMOS M7 altogether with drain electrode, the grid of described PMOS M11 links together, the drain electrode of described PMOS M11 is the output of described current source, the drain electrode of described PMOS M7 and described NMOS tube M9 connects the first output of described start-up circuit simultaneously, the drain electrode of described PMOS M8 connects the drain electrode of described NMOS tube M10, grid and the drain electrode of described NMOS tube M9 connect the second output that grid that is rear and described NMOS tube M10 connects described start-up circuit simultaneously altogether, the source electrode of described NMOS tube M9 connects the emitter stage of described PNP triode Q1, the source electrode of described NMOS tube M10 connects the emitter stage of described PNP triode Q2 by described resistance R1, the base stage of described PNP triode Q1, the base stage of colelctor electrode and described PNP triode Q2, colelctor electrode is ground connection all.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210061553.9A CN102611292B (en) | 2012-03-09 | 2012-03-09 | Starting circuit and current source with same |
| HK12113262.0A HK1173567A1 (en) | 2012-03-09 | 2012-12-21 | Starting circuit and current source with same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210061553.9A CN102611292B (en) | 2012-03-09 | 2012-03-09 | Starting circuit and current source with same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102611292A CN102611292A (en) | 2012-07-25 |
| CN102611292B true CN102611292B (en) | 2015-03-25 |
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ID=46528503
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210061553.9A Active CN102611292B (en) | 2012-03-09 | 2012-03-09 | Starting circuit and current source with same |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102611292B (en) |
| HK (1) | HK1173567A1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103269216A (en) * | 2013-06-07 | 2013-08-28 | 东南大学 | Quick starting circuit with low power consumption, and current source |
| CN116633116B (en) * | 2023-07-24 | 2024-01-16 | 深圳市思远半导体有限公司 | Low-power consumption current source, current source circuit, chip and electronic equipment with low-power consumption current source circuit |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6525598B1 (en) * | 1999-01-29 | 2003-02-25 | Cirrus Logic, Incorporated | Bias start up circuit and method |
| CN101938268A (en) * | 2009-06-29 | 2011-01-05 | 中兴通讯股份有限公司 | Starting circuit for realizing zero static power consumption |
| CN102033567A (en) * | 2010-11-26 | 2011-04-27 | 帝奥微电子有限公司 | Start-up circuit with zero static power consumption for reference voltage/current source |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3197654B2 (en) * | 1993-01-21 | 2001-08-13 | 本田技研工業株式会社 | Air-fuel ratio sensor deterioration detection device for internal combustion engine |
-
2012
- 2012-03-09 CN CN201210061553.9A patent/CN102611292B/en active Active
- 2012-12-21 HK HK12113262.0A patent/HK1173567A1/en unknown
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6525598B1 (en) * | 1999-01-29 | 2003-02-25 | Cirrus Logic, Incorporated | Bias start up circuit and method |
| CN101938268A (en) * | 2009-06-29 | 2011-01-05 | 中兴通讯股份有限公司 | Starting circuit for realizing zero static power consumption |
| CN102033567A (en) * | 2010-11-26 | 2011-04-27 | 帝奥微电子有限公司 | Start-up circuit with zero static power consumption for reference voltage/current source |
Also Published As
| Publication number | Publication date |
|---|---|
| HK1173567A1 (en) | 2013-05-16 |
| CN102611292A (en) | 2012-07-25 |
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