CN101153880A - Negative voltage detector - Google Patents
Negative voltage detector Download PDFInfo
- Publication number
- CN101153880A CN101153880A CNA2006101404120A CN200610140412A CN101153880A CN 101153880 A CN101153880 A CN 101153880A CN A2006101404120 A CNA2006101404120 A CN A2006101404120A CN 200610140412 A CN200610140412 A CN 200610140412A CN 101153880 A CN101153880 A CN 101153880A
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- channel transistor
- type channel
- negative voltage
- voltage detector
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Abstract
A negative voltage detector comprises a first n-type channel transistor with the grid electrode coupled with a drain electrode, a second n-type channel transistor with the grid electrode coupled with the grid electrode of the first n-type channel transistor, a first current source coupled with the drain electrode of the first n-type channel transistor, a second current source coupled with the drain electrode of the second n-type channel transistor, an output end coupled with the drain electrode of the second n-type channel transistor and an input end coupled with the source electrode of the first n-type channel transistor. The grid electrode voltage of the first n-type channel transistor (i.e. the grid electrode voltage of the second n-type channel transistor) depends on the source electrode voltage (i.e. the voltage of the input end); therefore, the switching on/off of the second n-type channel transistor can be realized through controlling the voltage of the input end so as to change the output voltage of the output end.
Description
Technical field
The present invention relates to a kind of negative voltage detector, relate in particular to the negative voltage detector of a kind of employing source with device (source follower) structure.
Background technology
The negative voltage detector 10 of Fig. 1 and Fig. 2 illustration one routine and input/output voltage variation diagram thereof.Described negative voltage detector 10 comprises a comparer 12 and a bleeder circuit 14.Described bleeder circuit 14 comprises two resistance (R
1, R
2), its output voltage (V
S) and described voltage (V to be measured
N) the pass be V
S=(V
1-V
N) R
2/ (R
1+ R
2).The output terminal of described comparer 12 is coupled to the phase inverter 16,18 of two series connection, and positive input terminal is coupled to a reference voltage (V
REF), negative input end then is coupled to the output terminal of described bleeder circuit 14.
As described reference voltage (V
REF) be lower than the output voltage (V of described bleeder circuit 14
S) time, the output voltage of described comparer 12 is a low level.Along with described voltage (V to be measured
N) become more negative voltage to a predetermined negative voltage (V
X), the output voltage (V of described bleeder circuit 14
S) will be less than described reference voltage (V
REF), cause the output voltage of described comparer 12 to become high level by low level.Concise and to the point, described negative voltage detector 10 is to detect less than described reference voltage (V by described comparer 12
REF) output voltage (V
S), and described output voltage (V
S) then depend on the V of described bleeder circuit 14
1, R
1And R
2Therefore, by changing the V of described bleeder circuit 14
1, R
1And R
2, can detect the predetermined negative voltage (V of different numerical value
X).Yet, realize that the comparer 12 of described negative voltage detector 10 needs to use considerable electronic components (for example transistor), promptly need to use sizable wafer and amass, quite expend cost.
Fig. 3 and Fig. 4 illustration another kind of conventional negative voltage detector 200 and input/output voltage variation diagram thereof, it is disclosed in U.S. Pat 6,549,016 B1.Described negative voltage detector 200 comprises two p type channel transistors 201,202 and a phase inverter 203.The drain electrode of described p type channel transistor 201 is connected in the source electrode of described p type channel transistor 202, and the input end of described phase inverter 203 is coupled to the contact N1 of described p type channel transistor 201,202, and described voltage (V to be measured
NN) then be coupled to the grid of described p type channel transistor 202.
The source electrode of described p type channel transistor 201 is coupled to a positive voltage (V
CC), and its grounded-grid, thereby described p type channel transistor 201 is in conducting state all the time.As described voltage (V to be measured
NN) be higher than the threshold voltage (V of described p type channel transistor 202
Th) time, described p type channel transistor 202 is in closed condition, the voltage (V of described contact N1
DIV) be high level, and the output voltage of described phase inverter 203 is a low level.Along with described voltage (V to be measured
NN) becoming more negative voltage and when being lower than the threshold voltage of described p type channel transistor 202, described p type channel transistor 202 is conducting, the voltage (V of described contact N1
DIV) will gradually be converted to low level by high level.
After 202 conductings of described p type channel transistor, its conducting resistance is along with described voltage (V to be measured
NN) become more negative voltage and diminish, thereby the voltage (V of described contact N1
DIV) also decrease.Voltage (V as described contact N1
DIV) be reduced to the trigger voltage (V of described phase inverter 203
TRIP) time, the output voltage of described phase inverter 203 is a high level by low transition promptly, so can be with the voltage (V to be measured of a negative level
NN) convert a high level voltage to.Specific, the output voltage of described phase inverter 203 depends on described contact voltage (V
DIV) whether less than described trigger voltage (V
TRIP), and described contact voltage (V
DIV) then further depend on the ratio of the conducting resistance (being its width and length) of described p type channel transistor 201,202.Therefore, the ratio of suitably choosing the conducting resistance of described p type channel transistor 201,202 can determine to trigger the contact voltage (V of described phase inverter 203
DIV), promptly detect described voltage (V to be measured
NN).
Summary of the invention
Fundamental purpose of the present invention provides a kind of source of adopting with the device structure and use the negative voltage detector of current mirror supply of current.
For achieving the above object, the present invention proposes a kind of negative voltage detector, it comprises a grid and a n type channel transistor that drains and couple, one grid is coupled to the 2nd n type channel transistor of the grid of a described n type channel transistor, one is coupled to first current source of the drain electrode of a described n type channel transistor, one is coupled to second current source of the drain electrode of described the 2nd n type channel transistor, one output terminal and that is coupled to the drain electrode of described the 2nd n type channel transistor is coupled to the input end of the source electrode of a described n type channel transistor, the grid voltage of described the 2nd n type channel transistor of wherein said input end may command and described the 2nd n type channel transistor of switch change the output voltage of described output terminal.
The output current of described first current source can be greater than the output current of described second current source, and the breadth length ratio (W/L) of a described n type channel transistor is matched with the breadth length ratio of described the 2nd n type channel transistor.Preferably, described first current source comprises the-p type channel transistor, and described second current source comprises one the 2nd p type channel transistor, and the breadth length ratio of a described p type channel transistor is greater than the breadth length ratio of described the 2nd p type channel transistor.In addition, the output current of described first current source also can equal the output current of described second current source, the breadth length ratio of a described p type channel transistor equals the breadth length ratio of described the 2nd p type channel transistor, and the breadth length ratio of a described n type channel transistor is less than the breadth length ratio of described the 2nd n type channel transistor.
A described p type channel transistor and described the 2nd p type channel transistor form a current mirror, and the source electrode of a described p type channel transistor and described the 2nd p type channel transistor is coupled to a voltage source.A described n type channel transistor and described the 2nd n type channel transistor are high voltage transistors.Described negative voltage detector can comprise a negative voltage isolated component in addition, is arranged between first current source and the described n type channel transistor.Described negative voltage isolated component comprises-p type channel transistor, and its source electrode is coupled to described first current source, and its drain electrode is coupled to the drain electrode of a described n type channel transistor.
Description of drawings
The negative voltage detector of Fig. 1 and Fig. 2 illustration one routine and defeated 3/ output voltage variation diagram thereof;
Fig. 3 and Fig. 4 illustration another kind of conventional negative voltage detector and input/output voltage variation diagram thereof;
The negative voltage detector of Fig. 5 and Fig. 6 illustration first embodiment of the invention and input/output voltage variation diagram thereof; And
The negative voltage detector of Fig. 7 illustration second embodiment of the invention.
Embodiment
The negative voltage detector 30 of Fig. 5 and Fig. 6 illustration first embodiment of the invention and input/output voltage variation diagram thereof.Described negative voltage detector 30 comprises a grid and a n type channel transistor 32 that drains and couple, one grid is coupled to the 2nd n type channel transistor 34 of the grid of a described n type channel transistor 32, one is coupled to first current source 42 of the drain electrode of a described n type channel transistor 32, one is coupled to second current source 44 of the drain electrode of described n type channel transistor 34, one output terminal 38 and that is coupled to the drain electrode of described the 2nd n type channel transistor 34 is coupled to the input end 36 of the source electrode of a described n type channel transistor 32.Particularly, a described n type channel transistor 32 and described the 2nd n type channel transistor 34 formation sources are with device.In addition, described negative voltage detector 30 can comprise the phase inverter 52,54 of two series connection in addition, is coupled to described output terminal 38.
A described n type channel transistor 32 and described the 2nd n type channel transistor 34 can be the high pressure NMOS transistor.Described negative electricity detecting device 30 can comprise a negative voltage isolated component 46 that is arranged at 32 of first current source 42 and described n type channel transistors in addition.Described negative voltage isolated component 46 comprises a p type channel transistor, and its source electrode is coupled to described first current source 42, and its drain electrode is coupled to the drain electrode of a described n type channel transistor 32.Preferably, described p type channel transistor is a high voltage PMOS transistor, and its grounded-grid conducts to described first current source 42 with the negative voltage of avoiding a described n type channel transistor 32.
The output current of described first current source 42 can be greater than the output current of described second current source 44, and the breadth length ratio of a described n type channel transistor 32 equals the breadth length ratio of described the 2nd n type channel transistor 34, a promptly described n type channel transistor 32 and described the 2nd n type channel transistor 34 couplings.Preferably, described first current source 42 comprises one the one p type channel transistor, described second current source 44 comprises a p type channel transistor, and the breadth length ratio (M=M) of a described p type channel transistor can be greater than the breadth length ratio (M=1) of described the 2nd p type channel transistor.So, described first current source 42 electric current that offers a described n type channel transistor 32 offers the electric current of described the 2nd n type channel transistor 34 greater than described second current source 44.Specific, described first current source 42 also can be made of M the 2nd p type channel transistor (breadth length ratio M=1) in parallel.A described p type channel transistor and described the 2nd p type channel transistor can be the PMOS transistor, and the source electrode of a described p type channel transistor and described the 2nd p type channel transistor is coupled to a voltage source (V
CC) and form a current mirror.
A described n type channel transistor 32 operates in saturation region (saturation region), its grid voltage depends on its source electrode (being described input end 36) voltage, and the grid of described the 2nd n type channel transistor 34 is coupled to the grid of a described n type channel transistor 32, thereby described input end 36 can be by the control grid voltage of described n type channel transistor 32 described the 2nd n type channel transistor 34 of switch, and then change the output voltage of described output terminal 38.The source ground of described the 2nd n type channel transistor 34, thereby work as the grid voltage (V of described the 2nd n type channel transistor 34
S) during greater than its threshold voltage, described the 2nd n type channel transistor 34 is in conducting state, the output voltage of described output terminal 38 is a low level.
Described input end 36 couples a voltage (V to be measured
N), and along with described voltage (V to be measured
N) become more negative voltage to a predetermined negative voltage (V
X), the grid voltage (V of a described n type channel transistor 32
S) (being the grid voltage of described the 2nd n type channel transistor 34) also decrease and be lower than a reference voltage (V
REF) when (being the threshold voltage of described the 2nd n type channel transistor 34), described the 2nd n type channel transistor 34 will be closed, and the voltage of described output terminal 38 will be high level by low transition, and through the output voltage (V of two series connection phase inverters 52,54
OUT) be high level.
Specific, the electric current that described first current source 42 offers a described n type channel transistor 32 offers the electric current of described the 2nd n type channel transistor 34 and the source ground of described the 2nd n type channel transistor 34 greater than described second current source 44.Therefore, as the grid voltage (V of a described n type channel transistor 32
S) (being the grid voltage of described the 2nd n type channel transistor 34) be reduced to described reference voltage (V
REF) when (being the threshold voltage of described the 2nd n type channel transistor 34), be coupled to the voltage (V to be measured of the source electrode of described the 2nd n type channel transistor 32
N) be necessary for a negative voltage (V
X).So, offer the electric current of described the～n type channel transistor 32 and the ratio that described second current source 44 offers the electric current of described the 2nd n type channel transistor 34, can change described negative voltage (V by changing described first current source 42
X) numerical value.
The negative voltage detector 30 of Fig. 7 illustration second embodiment of the invention '.Use a n type channel transistor 32 of coupling to compare with negative voltage detector shown in Figure 5 30 with the 2nd n type channel transistor 34, a n type channel transistor 32 of the negative voltage detector 30 of Fig. 7 ' use ' with the 2nd n type channel transistor 34 ' and do not match.Specific, a described n type channel transistor 32 ' breadth length ratio (M=1) less than described the 2nd n type channel transistor 34 ' breadth length ratio (M=M).Described the 2nd n type channel transistor 34 ' also can be made of M n type channel transistor 32 ' (a breadth length ratio M=1) in parallel.
Described first current source 42 ' provide to a described n type channel transistor 32 ' electric current equal described second current source 44 ' provide to the 2nd n type channel transistor 34 ' electric current, a promptly described p type channel transistor is matched with described the 2nd p type channel transistor.Described the 2nd n type channel transistor 32 ' breadth length ratio (M=1) less than described the 2nd n type channel transistor 34 ' breadth length ratio (M=M), and the source ground of described the 2nd n type channel transistor 34.Therefore, when a described n type channel transistor 32 ' grid voltage (V
S) (being the grid voltage of described the 2nd n type channel transistor 34) be reduced to described reference voltage (V
REF) when (being the threshold voltage of described the 2nd n type channel transistor 34), be coupled to a described n type channel transistor 32 ' the voltage (V to be measured of source electrode
N) be necessary for a negative voltage (V
X).So, by change a described n type channel transistor 32 ' with described the 2nd n type channel transistor 34 ' the ratio of breadth length ratio, can change described negative voltage (V
X) numerical value.
Technology contents of the present invention and technical characterstic disclose as above, yet the those skilled in the art still may be based on teaching of the present invention and announcement and done all replacement and modifications that does not deviate from spirit of the present invention.Therefore, protection scope of the present invention should be not limited to the content that embodiment discloses, and should comprise various do not deviate from replacement of the present invention and modifications, and is contained by appending claims.
Claims (20)
1. negative voltage detector is characterized in that comprising:
One the one n type channel transistor, its grid is coupled to drain electrode;
One the 2nd n type channel transistor, its grid is coupled to the grid of a described n type channel transistor;
One first current source is coupled to the drain electrode of a described n type channel transistor;
One second current source is coupled to the drain electrode of described the 2nd n type channel transistor:
One output terminal is coupled to the drain electrode of described the 2nd n type channel transistor; And
One input end is coupled to the source electrode of a described n type channel transistor, and it is controlled the switch of described the 2nd n type channel transistor and changes the output voltage of described output terminal.
2. negative voltage detector as claimed in claim 1 is characterized in that the output current of the output current of described first current source greater than described second current source.
3. negative voltage detector as claimed in claim 2 is characterized in that a described n type channel transistor is matched with described the 2nd n type channel transistor.
4. negative voltage detector as claimed in claim 2 is characterized in that described first current source comprises one the one p type channel transistor, and described second current source comprises one the 2nd p type channel transistor.
5. negative voltage detector as claimed in claim 4 is characterized in that a described p type channel transistor and described the 2nd p type channel transistor form a current mirror.
6. negative voltage detector as claimed in claim 4 is characterized in that the breadth length ratio of the breadth length ratio of a described p type channel transistor greater than described the 2nd p type channel transistor.
7. negative voltage detector as claimed in claim 4 is characterized in that the source electrode of a described p type channel transistor and described the 2nd p type channel transistor is coupled to a voltage source.
8. negative voltage detector as claimed in claim 1 is characterized in that the output current of described first current source equals the output current of described second current source.
9. negative voltage detector as claimed in claim 8 is characterized in that the breadth length ratio of the breadth length ratio of a described n type channel transistor less than described the 2nd n type channel transistor.
10. negative voltage detector as claimed in claim 8 is characterized in that described first current source comprises one the one p type channel transistor, and described second current source comprises one the 2nd p type channel transistor.
11. negative voltage detector as claimed in claim 10 is characterized in that a described p type channel transistor and described the 2nd p type channel transistor form a current mirror.
12. negative voltage detector as claimed in claim 10 is characterized in that a described p type channel transistor is matched with described the 2nd p type channel transistor.
13. negative voltage detector as claimed in claim 10 is characterized in that the source electrode of a described p type channel transistor and described the 2nd p type channel transistor is coupled to a voltage source.
14. negative voltage detector as claimed in claim 1 is characterized in that comprising in addition the phase inverter of two series connection being coupled to described output terminal.
15. negative voltage detector as claimed in claim 1 is characterized in that the source ground of described the 2nd n type channel transistor.
16. negative voltage detector as claimed in claim 1 is characterized in that a described n type channel transistor and described the 2nd n type channel transistor are the high pressure NMOS transistor.
17. negative voltage detector as claimed in claim 1 is characterized in that comprising in addition a negative voltage isolated component, is arranged between first current source and the described n type channel transistor.
18. negative voltage detector as claimed in claim 17 is characterized in that described negative voltage isolated component comprises a p type channel transistor, its source electrode is coupled to described first current source, and its drain electrode is coupled to the drain electrode of a described n type channel transistor.
19. negative voltage detector as claimed in claim 17 is characterized in that described p type channel transistor is a high voltage PMOS transistor.
20. negative voltage detector as claimed in claim 1 is characterized in that a described n type channel transistor and described the 2nd n type channel transistor form a source with device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101404120A CN101153880A (en) | 2006-09-30 | 2006-09-30 | Negative voltage detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101404120A CN101153880A (en) | 2006-09-30 | 2006-09-30 | Negative voltage detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101153880A true CN101153880A (en) | 2008-04-02 |
Family
ID=39255641
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006101404120A Pending CN101153880A (en) | 2006-09-30 | 2006-09-30 | Negative voltage detector |
Country Status (1)
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|---|---|
| CN (1) | CN101153880A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104422809A (en) * | 2013-08-28 | 2015-03-18 | 飞思卡尔半导体公司 | Negative voltage measurement |
| CN104950977A (en) * | 2015-06-12 | 2015-09-30 | 长沙景嘉微电子股份有限公司 | Detection circuit capable of being trigged by negative voltage |
| CN106526273A (en) * | 2016-10-24 | 2017-03-22 | 上海华力微电子有限公司 | Precise bleeder circuit for negative voltage measurement |
| CN107085132A (en) * | 2017-05-18 | 2017-08-22 | 东南大学 | A kind of positive voltage power under high-precision detection of negative pressure circuit |
| WO2017167096A1 (en) * | 2016-03-28 | 2017-10-05 | 比亚迪股份有限公司 | Negative voltage detection circuit |
| CN107894530A (en) * | 2017-12-25 | 2018-04-10 | 峰岹科技（深圳）有限公司 | Negative voltage detection circuit and motor driver |
| CN115309231A (en) * | 2021-05-08 | 2022-11-08 | 长鑫存储技术有限公司 | Comparison circuit and negative voltage generation system |
-
2006
- 2006-09-30 CN CNA2006101404120A patent/CN101153880A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104422809A (en) * | 2013-08-28 | 2015-03-18 | 飞思卡尔半导体公司 | Negative voltage measurement |
| CN104422809B (en) * | 2013-08-28 | 2018-08-10 | 恩智浦美国有限公司 | Negative voltage measurement device and method |
| CN104950977A (en) * | 2015-06-12 | 2015-09-30 | 长沙景嘉微电子股份有限公司 | Detection circuit capable of being trigged by negative voltage |
| WO2017167096A1 (en) * | 2016-03-28 | 2017-10-05 | 比亚迪股份有限公司 | Negative voltage detection circuit |
| CN107238743A (en) * | 2016-03-28 | 2017-10-10 | 比亚迪股份有限公司 | negative voltage detection circuit |
| CN106526273A (en) * | 2016-10-24 | 2017-03-22 | 上海华力微电子有限公司 | Precise bleeder circuit for negative voltage measurement |
| CN107085132A (en) * | 2017-05-18 | 2017-08-22 | 东南大学 | A kind of positive voltage power under high-precision detection of negative pressure circuit |
| CN107894530A (en) * | 2017-12-25 | 2018-04-10 | 峰岹科技（深圳）有限公司 | Negative voltage detection circuit and motor driver |
| CN115309231A (en) * | 2021-05-08 | 2022-11-08 | 长鑫存储技术有限公司 | Comparison circuit and negative voltage generation system |
| CN115309231B (en) * | 2021-05-08 | 2024-05-10 | 长鑫存储技术有限公司 | Comparison circuit and negative voltage generation system |
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