CN103050940A - Sub-threshold value MOS (metal oxide semiconductor) tube-based overheat protection circuit - Google Patents
Sub-threshold value MOS (metal oxide semiconductor) tube-based overheat protection circuit Download PDFInfo
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- CN103050940A CN103050940A CN2012105453583A CN201210545358A CN103050940A CN 103050940 A CN103050940 A CN 103050940A CN 2012105453583 A CN2012105453583 A CN 2012105453583A CN 201210545358 A CN201210545358 A CN 201210545358A CN 103050940 A CN103050940 A CN 103050940A
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Abstract
The invention provides a sub-threshold value MOS (metal oxide semiconductor) tube-based overheat protection circuit which comprises a temperature detecting circuit, a voltage comparer and an output shaping circuit, wherein the temperature detecting circuit is in output connection with the voltage comparer, the voltage comparer is in output connection with the output shaping circuit, the output shaping circuit is in feedback connection with the temperature detecting circuit, and the output shaping circuit generates an output voltage for controlling follow-up circuits. The temperature detecting circuit consists of an MOS image current source of a sub-threshold value region and a resistance network, and the voltage comparer adopts a push-pull type two-stage voltage comparer. An audion is not used in the circuit, so that the accuracy of the temperature detecting circuit can be improved; and therefore, the overheat protection circuit is suitable for the common CMOS (complementary metal-oxide-semiconductor transistor) technology.
Description
Technical field
The present invention relates to the thermal-shutdown circuit in power integrated circuit, the analog integrated circuit, particularly a kind of thermal-shutdown circuit based on the subthreshold value metal-oxide-semiconductor belongs to microelectronics technology.
Background technology
Power consumption such as power supply, driving element etc. in the integrated circuit (IC) chip is often very large, because the power switch pipe of integrated high voltage and large electric current, power consumption can be larger in the switching power source chip.Power consumption increases raises chip temperature, if dispel the heat ineffective, thermal-shutdown circuit is unreliable, is easy to cause the thermal breakdown of device, cause the device permanent damages and chip is burnt.
General thermal-shutdown circuit scheme; to adopt the conducting voltage of bipolar transistor negative temperature characteristic and a reference source to detect by the voltage that resistance produces; because the deviation that technique causes is crossed warm spot and larger deviation can be occurred, thereby causes the unstable of thermal-shutdown circuit.And bipolar transistor need to take larger area, also so that the area of traditional thermal-shutdown circuit and cost increase.
Summary of the invention
Caused the problem of warm spot skew because of process deviation in order to solve traditional thermal-shutdown circuit; the invention provides a kind of thermal-shutdown circuit circuit based on sub-threshold region metal-oxide-semiconductor temperature characterisitic; it does not use triode, has improved the precision of temperature protection circuit, and is applicable to common CMOS process.
Technical scheme of the present invention is: a kind of thermal-shutdown circuit based on the subthreshold value metal-oxide-semiconductor, it is characterized in that: be provided with temperature sensing circuit, voltage comparator and output Shaping circuit, temperature sensing circuit output is connected to voltage comparator, voltage comparator output is connected to the output Shaping circuit, the output of output Shaping circuit feedback is connected to temperature sensing circuit, and the output Shaping circuit produces the output voltage of control subsequent conditioning circuit; Wherein:
Temperature sensing circuit comprises ten metal-oxide-semiconductor M1～M10, three resistance R 0, R1, R2, the end of the drain electrode contact resistance R0 of metal-oxide-semiconductor M1 and the grid of metal-oxide-semiconductor M2, the other end of the grid contact resistance R0 of metal-oxide-semiconductor M1 and with and the source electrode of metal-oxide-semiconductor M3 be connected, the drain electrode of metal-oxide-semiconductor M2 connects the source electrode of metal-oxide-semiconductor M4, the gate interconnection of the grid of metal-oxide-semiconductor M3 and metal-oxide-semiconductor M4 also is connected the drain electrode of metal-oxide-semiconductor M3 and the drain electrode of metal-oxide-semiconductor M5, the gate interconnection of the grid of metal-oxide-semiconductor M5 and metal-oxide-semiconductor M6 also is connected the drain electrode of metal-oxide-semiconductor M4 and the drain electrode of metal-oxide-semiconductor M6, the source electrode of metal-oxide-semiconductor M6 connects the drain electrode of metal-oxide-semiconductor M7, the grid of metal-oxide-semiconductor M7, the gate interconnection of the grid of metal-oxide-semiconductor M8 and metal-oxide-semiconductor M9 also connects the drain electrode of metal-oxide-semiconductor M8 and the source electrode of metal-oxide-semiconductor M6, metal-oxide-semiconductor M7, M8, the source electrode of M9 all connects supply voltage, the end of the drain electrode contact resistance R1 of metal-oxide-semiconductor M9, the end of the other end contact resistance R2 of R1 and the drain electrode of metal-oxide-semiconductor M10, the other end of resistance R 2 and metal-oxide-semiconductor M1, M2, the source grounding of M10;
Voltage comparator comprises nine metal-oxide-semiconductor M11～M19, the drain electrode of metal-oxide-semiconductor M11 connects the source electrode of metal-oxide-semiconductor M12 and metal-oxide-semiconductor M13, the grid of metal-oxide-semiconductor M12 connects the drain electrode of metal-oxide-semiconductor M1 in the temperature sensing circuit, the grid of metal-oxide-semiconductor M13 connects the drain electrode of metal-oxide-semiconductor M9 in the temperature sensing circuit, the drain electrode interconnection of the drain electrode of metal-oxide-semiconductor M12 and metal-oxide-semiconductor M14 also is connected to the grid of metal-oxide-semiconductor M14 and the grid of metal-oxide-semiconductor M18, the drain electrode interconnection of the drain electrode of metal-oxide-semiconductor M13 and metal-oxide-semiconductor M15 also is connected to the grid of metal-oxide-semiconductor M15 and the grid of metal-oxide-semiconductor M19, metal-oxide-semiconductor M14, M15, M18, the source grounding of M19, the drain electrode interconnection of the drain electrode of metal-oxide-semiconductor M18 and metal-oxide-semiconductor M16 also is connected the grid of metal-oxide-semiconductor M16 and metal-oxide-semiconductor M17, the drain electrode of metal-oxide-semiconductor M17 is connected with the drain electrode of metal-oxide-semiconductor M19, metal-oxide-semiconductor M11, M16, the source electrode of M17 all connects supply voltage;
The output Shaping circuit comprises two inverter INV1 and INV2, the output of inverter INV1 connects the input of inverter INV1 and is connected to the grid of metal-oxide-semiconductor M10 in the temperature sensing circuit, the drain electrode of metal-oxide-semiconductor M17 and M19 in the input connection voltage comparator of inverter INV1, the output control subsequent conditioning circuit of inverter INV2.
Metal-oxide-semiconductor M1, M2 in the described temperature sensing circuit, M3, M4 are the NMOS pipe, and M1 and M2 are operated in sub-threshold region, and M3, M4 are operated in the saturation region, and metal-oxide-semiconductor M5, M6, M7, M8 are the PMOS pipe that is operated in the saturation region.
Advantage of the present invention and remarkable result:
(1) the present invention adopts MOS type thermal-shutdown circuit, does not comprise bipolar transistor, can saving chip area and cost.
(2) the present invention adopts the positive temperature coefficient voltage of subthreshold value metal-oxide-semiconductor current source generation and the subthreshold value metal-oxide-semiconductor gate source voltage of negative temperature coefficient to carry out temperature detection, can reduce to have improved the stability of circuit because the excessively warm spot skew that process deviation causes is excessive.
Description of drawings
Fig. 1 is theory diagram of the present invention;
Fig. 2 is a kind of specific implementation circuit diagram of the present invention;
Fig. 3 is the present invention and traditional thermal-shutdown circuit effect contrast figure.
Embodiment
Such as Fig. 1, circuit of the present invention comprises temperature sensing circuit, voltage comparator and output Shaping circuit, temperature sensing circuit output V
PAnd V
NBe connected to voltage comparator, voltage comparator output V
OBe connected to the output Shaping circuit, output Shaping circuit feedback output V
FBBe connected to temperature sensing circuit, the output Shaping circuit produces the output voltage V of control subsequent conditioning circuit
OUT
Fig. 2 is a kind of specific implementation circuit of the present invention.Temperature sensing circuit 1 comprises MOS mirror current source and the resistor network of sub-threshold region, is provided with metal-oxide-semiconductor M1, M2, M3, M4, M5, M6, M7, M8, M9, M10, resistance R 0, R1, R2.The drain electrode of metal-oxide-semiconductor M1 is connected to node A, and grid is connected to Node B, and source electrode is connected to GND; Resistance R 0 is connected between node A and the Node B; The drain electrode of metal-oxide-semiconductor M2 is connected to node C, and grid is connected to node A, and source electrode is connected to GND; The drain electrode of metal-oxide-semiconductor M3 is connected to node D, and grid is connected to node D, and source electrode is connected to Node B; The drain electrode of metal-oxide-semiconductor M4 is connected to node E, and grid is connected to node D, and source electrode is connected to node C; The drain electrode of metal-oxide-semiconductor M5 is connected to node D, and grid is connected to node E, and source electrode is connected to node F; The drain electrode of metal-oxide-semiconductor M6 is connected to node E, and grid is connected to node E, and source electrode is connected to node G; The drain electrode of metal-oxide-semiconductor M7 is connected to node F, and grid is connected to node G, and source electrode is connected to VDD; The drain electrode of metal-oxide-semiconductor M8 is connected to node G, and grid is connected to node G, and source electrode is connected to VDD.The drain electrode of metal-oxide-semiconductor M9 is connected to node H, and grid is connected to node G, and source electrode is connected to VDD; Resistance R 1 is connected between node H and the node I; Resistance R 2 is connected between node I and the GND; The drain electrode of metal-oxide-semiconductor M10 is connected to node I, and grid is connected to node O, and source electrode is connected to GND.
In the temperature sensing circuit 1, be operated in NMOS pipe M1 and the M2 of sub-threshold region, NMOS pipe M3, the M4 and PMOS pipe M5, M6, M7, M8 and the resistance R 0 that are operated in the saturation region consist of mirror current source.Wherein, be operated in sub-threshold region NMOS pipe M1, M2 gate source voltage have a negative temperature coefficient, be operated in NMOS pipe M3, the M4 of saturation region can shielded power supply voltage on the impact of M1, M2, the PMOS that is operated in the saturation region manages the exact matching of the common-source common-gate current mirror realization circuit of M5, M6, M7, M8 composition, produces the electric current that is directly proportional with temperature.The resistor network that PMOS pipe M9, resistance R 1 and R2, NMOS pipe M10 form is electric current I
PTATConvert the voltage V that is directly proportional with temperature to
P, switching tube M10 is subjected to feedback signal V
FBEffect, whether short circuit of controlling resistance R2 realizes lag function.Utilize the gate source voltage V of M2 pipe
NWith voltage V
PCome the variation of detected temperatures, and as two inputs of voltage comparator.
Voltage comparator 2 can adopt all kinds voltage comparator, what the present invention adopted is push-pull type two-stage voltage comparator, comprise metal-oxide-semiconductor M11, M12, M13, M14, M15, M16, M17, M18, M19, wherein M14, M15, M18, M19 are the NMOS pipe, M11, M12, M13, M16, M17 are the PMOS pipe, and they all are operated in the saturation region.The drain electrode of metal-oxide-semiconductor M11 is connected to node K, and grid is connected to node G, and source electrode is connected to VDD; The drain electrode of metal-oxide-semiconductor M12 is connected to node L, and grid is connected to node A, and source electrode is connected to node K; The drain electrode of metal-oxide-semiconductor M13 is connected to node M, and grid is connected to node H, and source electrode is connected to node K; The drain electrode of metal-oxide-semiconductor M14 is connected to node L, and grid is connected to node L, and source electrode is connected to GND; The drain electrode of metal-oxide-semiconductor M15 is connected to node M, and grid is connected to node M, and source electrode is connected to GND; The drain electrode of metal-oxide-semiconductor M16 is connected to node J, and grid is connected to node J, and source electrode is connected to VDD; The drain electrode of metal-oxide-semiconductor M17 is connected to node N, and grid is connected to node J, and source electrode is connected to VDD; The drain electrode of metal-oxide-semiconductor M18 is connected to node J, and grid is connected to node L, and source electrode is connected to GND; The drain electrode of metal-oxide-semiconductor M19 is connected to node N, and grid is connected to node M, and source electrode is connected to GND.
In the voltage comparator 2, metal-oxide-semiconductor M11 provides biasing as bias source for comparator, and metal-oxide-semiconductor M12, M13, M14, M15 consist of the first order of comparator, and M16, M17, M18, M19 consist of the comparator second level, and both-end output is changed into Single-end output V
O, as the input of output Shaping circuit.
Output Shaping circuit 3 comprises two inverter INV1, INV2, and INV1 is connected between node N and the node O; INV2 is connected to node O and output V
OUTBetween, V
OUTBe used for the control subsequent conditioning circuit as output, change the comparing voltage value of comparator input by inverter INV1, produce feedback signal V
FBCome the shutoff of controllable switch pipe M10, thereby realize the hysteresis function, prevent from crossing warm spot generation thermal oscillation.
The operation principle of circuit of the present invention and process:
When temperature is very low, the gate source voltage V of metal-oxide-semiconductor M2
NHeight and H point voltage V
PLow, through behind the comparator, N point is low, and the O point is height, so metal-oxide-semiconductor M10 is unlocked, and resistance R 2 is by short circuit.
When temperature rises, V
NDescend V
PRaise.Under both a certain temperature, V
PWill be above V
NThereby, make comparator output node N become height, the O point becomes low, and the excess temperature signal produces, and chip quits work.M10 will be turned off this moment, and R1 connects with R2.
When temperature descended from the high-temperature region, because this moment, M10 turn-offed, R1 connected with R2, so V at this moment
PGreater than V
NWhen temperature is reduced to a certain temperature, V
NAgain greater than V
P, this moment, the O point was high, the chip normal operation.
Fig. 3 is the present invention and traditional thermal-shutdown circuit effect contrast figure; VREF is reference voltage among the figure; VN1 is that negative temperature coefficient voltage, the VN2 under the normal condition is the negative temperature coefficient voltage under the process deviation, and VP1 is that positive temperature coefficient voltage, the VP2 under the normal condition is the positive temperature coefficient voltage under the process deviation.The tradition thermal-shutdown circuit adopts relatively detected temperatures of VN1 and VREF, it is the intersection point A of VN1 and VREF that normal condition was descended warm spot, and its corresponding temperature is T1, crosses the intersection points B that warm spot is VN1 and VREF during technique generation deviation, its corresponding temperature is T2, and T2 is Δ T1 to the side-play amount of T1; The present invention adopts relatively detected temperatures of VN1 and VP1, and it is the intersection point A of VN1 and VP1 that normal condition was descended warm spot, and its corresponding temperature is T1, and crossing warm spot during technique generation deviation is the intersection point C of VN1 and VP, and its corresponding temperature is T3, and T3 is Δ T2 to the side-play amount of T1.As seen from the figure, Δ T2＜Δ T1, so the present invention can be alleviated the excessively warm spot shift phenomenon that process deviation causes well.
The present invention is not limited to above-mentioned execution mode, no matter its way of realization is done any variation, every employing subthreshold value metal-oxide-semiconductor temperature characterisitic is carried out the thermal-shutdown circuit of temperature detection, all drops within the protection range of the present invention.
Claims (2)
1. thermal-shutdown circuit based on the subthreshold value metal-oxide-semiconductor, it is characterized in that: be provided with temperature sensing circuit, voltage comparator and output Shaping circuit, temperature sensing circuit output is connected to voltage comparator, voltage comparator output is connected to the output Shaping circuit, the output of output Shaping circuit feedback is connected to temperature sensing circuit, and the output Shaping circuit produces the output voltage of control subsequent conditioning circuit; Wherein:
Temperature sensing circuit comprises ten metal-oxide-semiconductor M1～M10, three resistance R 0, R1, R2, the end of the drain electrode contact resistance R0 of metal-oxide-semiconductor M1 and the grid of metal-oxide-semiconductor M2, the other end of the grid contact resistance R0 of metal-oxide-semiconductor M1 and with and the source electrode of metal-oxide-semiconductor M3 be connected, the drain electrode of metal-oxide-semiconductor M2 connects the source electrode of metal-oxide-semiconductor M4, the gate interconnection of the grid of metal-oxide-semiconductor M3 and metal-oxide-semiconductor M4 also is connected the drain electrode of metal-oxide-semiconductor M3 and the drain electrode of metal-oxide-semiconductor M5, the gate interconnection of the grid of metal-oxide-semiconductor M5 and metal-oxide-semiconductor M6 also is connected the drain electrode of metal-oxide-semiconductor M4 and the drain electrode of metal-oxide-semiconductor M6, the source electrode of metal-oxide-semiconductor M6 connects the drain electrode of metal-oxide-semiconductor M7, the grid of metal-oxide-semiconductor M7, the gate interconnection of the grid of metal-oxide-semiconductor M8 and metal-oxide-semiconductor M9 also connects the drain electrode of metal-oxide-semiconductor M8 and the source electrode of metal-oxide-semiconductor M6, metal-oxide-semiconductor M7, M8, the source electrode of M9 all connects supply voltage, the end of the drain electrode contact resistance R1 of metal-oxide-semiconductor M9, the end of the other end contact resistance R2 of R1 and the drain electrode of metal-oxide-semiconductor M10, the other end of resistance R 2 and metal-oxide-semiconductor M1, M2, the source grounding of M10;
Voltage comparator comprises nine metal-oxide-semiconductor M11～M19, the drain electrode of metal-oxide-semiconductor M11 connects the source electrode of metal-oxide-semiconductor M12 and metal-oxide-semiconductor M13, the grid of metal-oxide-semiconductor M12 connects the drain electrode of metal-oxide-semiconductor M1 in the temperature sensing circuit, the grid of metal-oxide-semiconductor M13 connects the drain electrode of metal-oxide-semiconductor M9 in the temperature sensing circuit, the drain electrode interconnection of the drain electrode of metal-oxide-semiconductor M12 and metal-oxide-semiconductor M14 also is connected to the grid of metal-oxide-semiconductor M14 and the grid of metal-oxide-semiconductor M18, the drain electrode interconnection of the drain electrode of metal-oxide-semiconductor M13 and metal-oxide-semiconductor M15 also is connected to the grid of metal-oxide-semiconductor M15 and the grid of metal-oxide-semiconductor M19, metal-oxide-semiconductor M14, M15, M18, the source grounding of M19, the drain electrode interconnection of the drain electrode of metal-oxide-semiconductor M18 and metal-oxide-semiconductor M16 also is connected the grid of metal-oxide-semiconductor M16 and metal-oxide-semiconductor M17, the drain electrode of metal-oxide-semiconductor M17 is connected with the drain electrode of metal-oxide-semiconductor M19, metal-oxide-semiconductor M11, M16, the source electrode of M17 all connects supply voltage;
The output Shaping circuit comprises two inverter INV1 and INV2, the output of inverter INV1 connects the input of inverter INV1 and is connected to the grid of metal-oxide-semiconductor M10 in the temperature sensing circuit, the drain electrode of metal-oxide-semiconductor M17 and M19 in the input connection voltage comparator of inverter INV1, the output control subsequent conditioning circuit of inverter INV2.
2. the thermal-shutdown circuit based on the subthreshold value metal-oxide-semiconductor according to claim 1; it is characterized in that: metal-oxide-semiconductor M1, the M2 in the temperature sensing circuit, M3, M4 are the NMOS pipe; M1 and M2 are operated in sub-threshold region; M3, M4 are operated in the saturation region, and metal-oxide-semiconductor M5, M6, M7, M8 are the PMOS pipe that is operated in the saturation region.
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| CN201210545358.3A CN103050940B (en) | 2012-12-14 | 2012-12-14 | A kind of thermal-shutdown circuit based on subthreshold value metal-oxide-semiconductor |
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| CN201210545358.3A CN103050940B (en) | 2012-12-14 | 2012-12-14 | A kind of thermal-shutdown circuit based on subthreshold value metal-oxide-semiconductor |
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Cited By (11)
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| CN104111688A (en) * | 2014-05-13 | 2014-10-22 | 西安电子科技大学昆山创新研究院 | BiCMOS non-operational amplifier band gap voltage reference source with temperature monitoring function |
| CN104362585A (en) * | 2014-10-31 | 2015-02-18 | 无锡中星微电子有限公司 | Over-temperature protection circuit |
| CN104679092A (en) * | 2015-01-29 | 2015-06-03 | 电子科技大学 | Over-temperature delay protection circuit with wide power voltage range |
| TWI497856B (en) * | 2013-05-15 | 2015-08-21 | Himax Tech Ltd | Over temperature protection circuit and method thereof |
| CN104967094A (en) * | 2015-07-29 | 2015-10-07 | 电子科技大学 | Over-temperature protection circuit |
| CN104967095A (en) * | 2015-07-29 | 2015-10-07 | 电子科技大学 | Over-temperature protection circuit |
| CN108107344A (en) * | 2017-12-05 | 2018-06-01 | 武汉英弗耐斯电子科技有限公司 | A kind of overheating protection circuit suitable for IGBT driving chips |
| CN108664073A (en) * | 2017-03-31 | 2018-10-16 | 中芯国际集成电路制造(上海)有限公司 | A kind of detection circuit |
| CN111879999A (en) * | 2020-07-31 | 2020-11-03 | 东南大学 | Low-temperature coefficient rapid voltage detection circuit |
| CN114185387A (en) * | 2021-10-25 | 2022-03-15 | 西安电子科技大学芜湖研究院 | Low-power-consumption over-temperature protection circuit based on current comparator |
| CN115855289A (en) * | 2023-02-14 | 2023-03-28 | 晶艺半导体有限公司 | Temperature detection module and over-temperature protection circuit |
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| TWI497856B (en) * | 2013-05-15 | 2015-08-21 | Himax Tech Ltd | Over temperature protection circuit and method thereof |
| CN104111688B (en) * | 2014-05-13 | 2016-04-13 | 西安电子科技大学昆山创新研究院 | A kind of BiCMOS with temperature-monitoring function is without amplifier band gap voltage reference source |
| CN104111688A (en) * | 2014-05-13 | 2014-10-22 | 西安电子科技大学昆山创新研究院 | BiCMOS non-operational amplifier band gap voltage reference source with temperature monitoring function |
| CN104362585A (en) * | 2014-10-31 | 2015-02-18 | 无锡中星微电子有限公司 | Over-temperature protection circuit |
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| CN104679092A (en) * | 2015-01-29 | 2015-06-03 | 电子科技大学 | Over-temperature delay protection circuit with wide power voltage range |
| CN104679092B (en) * | 2015-01-29 | 2016-04-06 | 电子科技大学 | The excess temperature delay protection circuit of wide power voltage |
| CN104967094A (en) * | 2015-07-29 | 2015-10-07 | 电子科技大学 | Over-temperature protection circuit |
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| CN104967095B (en) * | 2015-07-29 | 2018-01-19 | 电子科技大学 | Thermal-shutdown circuit |
| CN108664073A (en) * | 2017-03-31 | 2018-10-16 | 中芯国际集成电路制造(上海)有限公司 | A kind of detection circuit |
| CN108664073B (en) * | 2017-03-31 | 2020-10-09 | 中芯国际集成电路制造(上海)有限公司 | Detection circuit |
| CN108107344A (en) * | 2017-12-05 | 2018-06-01 | 武汉英弗耐斯电子科技有限公司 | A kind of overheating protection circuit suitable for IGBT driving chips |
| CN111879999A (en) * | 2020-07-31 | 2020-11-03 | 东南大学 | Low-temperature coefficient rapid voltage detection circuit |
| CN111879999B (en) * | 2020-07-31 | 2023-03-14 | 东南大学 | Low-temperature coefficient rapid voltage detection circuit |
| CN114185387A (en) * | 2021-10-25 | 2022-03-15 | 西安电子科技大学芜湖研究院 | Low-power-consumption over-temperature protection circuit based on current comparator |
| CN115855289A (en) * | 2023-02-14 | 2023-03-28 | 晶艺半导体有限公司 | Temperature detection module and over-temperature protection circuit |
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