CN101571726A - Internal voltage generator - Google Patents
Internal voltage generator Download PDFInfo
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- CN101571726A CN101571726A CNA2008100943325A CN200810094332A CN101571726A CN 101571726 A CN101571726 A CN 101571726A CN A2008100943325 A CNA2008100943325 A CN A2008100943325A CN 200810094332 A CN200810094332 A CN 200810094332A CN 101571726 A CN101571726 A CN 101571726A
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- temperature detection
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Abstract
The invention provides an internal voltage generator which comprises a temperature detection circuit and a voltage conversion circuit, wherein the temperature detection circuit generates a high-temperature detection signal while the detected temperature is higher than a preset high-temperature threshold value and generates a low-temperature detection signal while the detected temperature is lower than a preset low-temperature threshold value; and the voltage conversion circuit converts the external power voltage into the internal working voltage according to the high-temperature detection signal or the lower-temperature detection signal generated by the temperature detection circuit.
Description
Technical field
The present invention relates to a kind of internal voltage generator, more particularly, relate to a kind of internal voltage generator with the effect of temperature self-regulating joint.
Background technology
In today that environmental consciousness strengthens day by day, reducing power consumption has been the key subjects of modern household electrical appliances, the communications field.And along with the raising of technology, present chip has entered deep-submicron, the operating voltage of internal transistor descends gradually, all can be integrated with internal voltage generator at most of chip internals, the high voltage that outer power voltage was provided is converted to inner other circuits needed low voltages, realize the requirement of low-power consumption simultaneously.For example, in .18um technology, the 5.0V external voltage is converted to 2.0V internal work voltage.
Fig. 1 illustrates the electric power system 100 of IC (integrated circuit) chip of prior art.Electric power system 100 is integrated with internal voltage generator 110, and internal voltage generator 110 is converted to the required low voltage VDD of inner other circuit workings with what the IC chip exterior provided than high power supply voltage VDDA, and provides it to IC device 120.
Though the internal voltage generator 110 of prior art can be realized the conversion of voltage, there are the following problems:
(1) during chip manufacturing, the variation of process conditions causes the output LOW voltage deviation of internal voltage generator;
(2) during chip operation,, the variation of ambient temperature produces deviation because causing the output LOW voltage of internal voltage generator.
That is to say, the IC chip the voltage generator of integrated prior art exist output bigger with the variation of flow-route and temperature, cause the problem of interlock circuit job insecurity.Usually be integrated with mimic channel as ADC (analog to digital conversion circuit) and so at chip internal, the variation of internal work voltage will have a strong impact on phase closing precision and performance, even the phenomenon of transistor cisco unity malfunction occur.
Summary of the invention
Purpose of the present invention aims to provide the internal voltage generator of a kind of integrated temperature testing circuit and mu balanced circuit, and the stability that improves internal work voltage changes big problem with the output that overcomes internal voltage generator with flow-route and temperature.
According to an aspect of the present invention, a kind of internal voltage generator is provided, described internal voltage generator comprises: temperature sensing circuit, when the detected temperature of described temperature sensing circuit is higher than the predetermined high temperature threshold value, generate the high temperature detection signal, when the detected temperature of described temperature sensing circuit is lower than the predetermined low temperature level threshold value, generate the low temperature detection signal; Voltage conversion circuit, described voltage conversion circuit is converted to internal work voltage according to high temperature detection signal or low temperature detection signal that temperature sensing circuit produced with outer power voltage.
According to an aspect of the present invention, described temperature sensing circuit comprises: the temperature sensitive device produces high temperature according to temperature and detects voltage and low temperature detection voltage; High temperature detection signal maker produces the high temperature detection signal when described high temperature detects when voltage is lower than reference value; Low temperature detection signal maker produces the low temperature detection signal when described low temperature detects when voltage is higher than reference value.
According to an aspect of the present invention, described temperature sensitive device is made of current mirror, temp .-sensitive diodes and first resistance, second resistance and the 3rd resistance, the output terminal of current mirror and first resistance, second resistance, the 3rd resistance and temp .-sensitive diodes anodal in sequential series, the minus earth of temp .-sensitive diodes, the voltage-to-ground of the node between first resistance and second resistance is that low temperature detects voltage, and the voltage-to-ground of the node between second resistance and the 3rd resistance is that high temperature detects voltage.
According to an aspect of the present invention, described voltage conversion circuit comprises: generating circuit from reference voltage is converted to outer power voltage the reference voltage that is lower than internal work voltage; Mu balanced circuit generates internal reference voltage by reference voltage is boosted, and when receiving the high temperature detection signal that temperature sensing circuit produces, increases the internal reference voltage that generates; When receiving the low temperature detection signal that temperature sensing circuit produces, reduce the internal reference voltage that generates.
According to an aspect of the present invention, described mu balanced circuit comprises: the differential amplifier that is formed resistance string, first switch and second switch and had negative feedback structure by the 4th resistance, the 5th resistance, the 6th resistance, the series connection of the 7th resistance; Described resistance string is connected to the negative feedback end of differential amplifier through the 4th resistance, and described resistance string is through the 7th resistance eutral grounding; First switch and second switch are in parallel with the 5th resistance and the 6th resistance respectively, and first switch and second switch are respectively by low temperature detection signal and the control of high temperature detection signal and conducting; The first input end of differential amplifier is connected to reference voltage, and second input end is connected between the 5th resistance and the 6th resistance; Described negative feedback structure comprises PMOS pipe, and the source electrode of a PMOS pipe is connected to outer power voltage, and grid is connected to first output terminal anti-phase with first input end, and drain electrode is as the negative feedback end of differential amplifier.
According to an aspect of the present invention, described differential amplifier comprises: the 2nd PMOS pipe, the 3rd PMOS pipe, NMOS pipe, the 2nd NMOS pipe, the 3rd NMOS pipe; The source electrode of the 2nd PMOS pipe and the 3rd PMOS pipe is connected to outer power voltage VDDA jointly, and its grid is connected to the drain electrode of the 2nd NMOS pipe and the drain electrode of the 2nd PMOS pipe jointly; The drain electrode of the 3rd PMOS pipe is connected to the grid of a PMOS as described first output terminal, and is connected to the drain electrode of a NMOS pipe simultaneously; The grid of the one NMOS pipe is as described first input end, and the grid of the 2nd NMOS pipe is as described second output terminal; The source electrode of the one NMOS pipe and the 2nd NMOS pipe is connected to the drain electrode of the 3rd NMOS pipe jointly, the source ground of the 3rd NMOS pipe, and the grid of the 3rd NMOS pipe connects bias voltage.
According to an aspect of the present invention, between described the 4th resistance and described the 5th resistance, be in series with the 8th resistance with the 3rd switch in parallel, be in series with the 9th resistance with the 4th switch in parallel between described the 6th resistance and described the 7th resistance, the 3rd switch and the 4th switch are used to respectively reduce and increase the signal controlling of internal work voltage and conducting according to chip manufacturing process.
Description of drawings
By the detailed description of carrying out below in conjunction with accompanying drawing, above and other objects of the present invention, characteristics and advantage will become apparent, wherein:
Fig. 1 illustrates the electric power system of the IC device of prior art;
Fig. 2 illustrates the block diagram of internal voltage generator according to an exemplary embodiment of the present invention;
Fig. 3 illustrates the circuit diagram of temperature sensing circuit according to an exemplary embodiment of the present invention;
Fig. 4 illustrates the circuit diagram of mu balanced circuit according to an exemplary embodiment of the present invention.
Embodiment
Below, describe embodiments of the invention in detail with reference to accompanying drawing.
Fig. 2 illustrates the block diagram of internal voltage generator 100 according to an exemplary embodiment of the present invention.With reference to Fig. 2, the internal voltage generator 200 of exemplary embodiment of the present comprises: temperature sensing circuit 210 and voltage conversion circuit 220.
The temperature signal that voltage conversion circuit 220 sends according to outer power voltage VDDA and temperature sensing circuit 210 generates internal work voltage VDD.Specifically, voltage conversion circuit 220 comprises generating circuit from reference voltage and mu balanced circuit.Generating circuit from reference voltage produces a reference voltage Vref that is lower than internal work voltage VDD based on outer power voltage VDDA.Subsequently, mu balanced circuit generates internal work voltage VDD according to the temperature signal that reference voltage Vref that generating circuit from reference voltage produced and temperature sensing circuit 210 send.
Describe temperature sensing circuit 210 in detail according to Fig. 3 below.Fig. 3 illustrates the circuit diagram of temperature sensing circuit according to an exemplary embodiment of the present invention.
With reference to Fig. 3, temperature sensing circuit 210 comprises: temperature sensitive device 310, high temperature detection signal maker 320 and low temperature detection signal maker 330.
Temperature sensitive device 310 is made of current mirror 311, temp .-sensitive diodes D and resistance string (R21, R22, R23).Current mirror 311 is made of current source IS, metal-oxide-semiconductor MP21 and metal-oxide-semiconductor MP22.In current mirror 311, the output head grounding of current source IS, input end are connected to the drain electrode of grid and the MP21 of MP21 and MP22.MP21 and MP22 source electrode are connected to outer power voltage VDDA jointly, and the drain electrode of MP22 links to each other with an end of resistance R 21, thereby the output terminal of current mirror 311 is connected to the end of resistance string (R21, R22, R23).The other end of resistance string (R21, R22, R23) links to each other the minus earth of diode D by the end of R23 with the positive pole of diode D.
Current mirror duplicates identical current flowing resistance string (R21, R22, R23) path.Temperature sensing circuit 210 utilizes the current temperature characteristic of diode D to come detection chip working temperature situation.The current characteristics of diode D is:
I＝I
S(expV
BE/nV
T-1) (1)
Wherein, I
SBe the reverse saturation current of diode D, have good temperature characterisitic, rise along with the rising of temperature.V
BEBe semiconductor PN voltage, V
TBe the thermal voltage constant, n is determined by semi-conductive material and physical arrangement, is generally 1 or 2.
Node NL between R21, the R22 is the low temperature detection node, and its node voltage detects voltage as low temperature: V
NL=V
BE+ Is* (R22+R23).Node NH between R22, the R23 is the high temperature detection node, and its node voltage detects voltage as high temperature: V
NH=V
BE+ Is*R23.Predetermined high temperature threshold value DH and low temperature threshold value DL can be set by the value that resistance R 22, R23 are set.
High temperature detection signal maker 320 is by comparer I4 and lead phase device I2 and formed.The anode of comparer I4 is connected to high temperature detection node NH, and backward end is connected to the reference voltage Vref that the generating circuit from reference voltage (not shown) of voltage conversion circuit 220 is exported.The output valve of comparer I4 obtains high temperature detection signal HTEMP through leading after phase device I2 leads mutually.Specifically: when the chip operation temperature rose, the Is of diode D was along with temperature increases, V
BEDescend.When the temperature of chip was higher than predetermined high temperature threshold value, the high temperature of high temperature detection node NH detected the reference voltage Vref that voltage is lower than comparer I4 anode, thus comparer I4 output low level signal.The high temperature detection signal HTEMP of this low level signal output high level after leading phase device I2 and leading mutually.
Low temperature detection signal maker 330 is similar with high temperature detection signal maker 320, and device I1 forms with leading mutually by comparer I3.The backward end of comparer I3 is connected to low temperature detection node NL, and anode is connected to reference voltage Vref.The output valve of comparer I3 obtains low temperature detection signal LTEMP through leading after phase device I1 leads mutually.Concrete principle is: when the chip operation temperature reduced, the Is of diode reduced thereupon.When the temperature of chip was lower than predetermined low temperature threshold value DL, the low temperature of low temperature detection node NL detected the reference voltage Vref that voltage is higher than the comparer anode, thus the low level signal of comparer I3 output.The low temperature detection signal LTEMP of this low level signal output high level after leading phase device I1 and leading mutually.
In another exemplary embodiment of the present invention, high temperature detection signal maker 320 does not comprise leads phase device I2, and the anode of comparer I4 is connected to reference voltage Vref, and backward end is connected to high temperature detection node NH.Low temperature detection signal maker 330 does not comprise leads phase device I1, and the anode of comparer I3 is connected to low temperature detection node NL, and backward end is connected to reference voltage Vref.Thereby when the temperature of chip is higher than DL (or being lower than DH), the high temperature detection signal HTEMP (the low temperature detection signal LTEMP of high level) of high temperature detection signal maker 320 (or low temperature detection signal maker 330) output high level.
Fig. 4 illustrates the circuit diagram of mu balanced circuit 400 according to an exemplary embodiment of the present invention.
With reference to Fig. 4, mu balanced circuit 400 comprises: negative feedback resistor string (R31, R32, R33, R34, R35, R36), switch MOS pipe MN30, MN31, MN32 and MN33 and differential amplifier.
Negative feedback resistor was ganged up resistance R 31, R32, R33, R34, R35, R36 series connection and was formed, negative feedback resistor was ganged up an end ground connection of resistance R 36, and the other end connects outer power voltage VDDA by the end output internal work voltage VDD of resistance R 31 and by PMOS pipe MP5.
Resistance R 32, R33, R34 and R35 are in parallel with switch MOS pipe MN30, MN31, MN32 and MN33 respectively, thereby the conducting by switch MOS pipe MN30, MN31, MN32 and MN33 and by operation control respectively resistance R 32, R33, R34 and R35 in the negative feedback resistor string (R31, R32, R33, R34, R35, R36) in this negative feedback resistor string whether (for example by short circuit, when the MN30 conducting, R32 is by short circuit).The conducting of switch MOS pipe MN30, MN31, MN32 and MN33 and by operation respectively by signal LTEST, LTEMP, HTEST and HTEMP control.
HTEMP, LTEMP are respectively the high temperature detection signal and the low temperature detection signal of temperature sensing circuit 210 outputs of Fig. 3, and HTEST, LTEST regulate builtin voltage because the caused instability of fabrication process condition when being used as chip testing.Wherein, LTEST, LTEMP are used to reduce the output voltage V DD (that is, the output of internal voltage generator 100) of mu balanced circuit 400, and HTEST, HTEMP are used to improve the internal work voltage VDD (output of internal voltage generator 100) of mu balanced circuit 400 outputs.
Differential amplifier is used to improve the output driving force of mu balanced circuit 400, manages MP0, MP1 and NMOS pipe MN2, MN3 and MN4 by PMOS and constitutes.MN2, MN3 form differential pair tube, and MP0, MP1 are as the load of differential pair tube, and bias voltage Vbias (can produce as required or be provided with) and MN4 constitute the biasing circuit of differential pair tube.MP5 forms the negative feedback structure of differential amplifier, makes that (that is, the grid of MN2 and MN3) magnitude of voltage equates (that is, the grid voltage of MN2, MN3 is Vref), also increases the output driving force of VDD simultaneously for two input ends of amplifier.
In above-mentioned differential amplifier, the source electrode of MP0, MP1 is connected to outer power voltage VDDA jointly, and its grid is connected to the drain electrode of MN3 and the drain electrode of MP0 jointly.The drain electrode of MP1 is connected to the grid of MP5, and is connected to the drain electrode of MN2 simultaneously.The grid of MN2 is connected to reference voltage Vref, and the grid of MN3 is connected between resistance R 33 and the R34.The source electrode of MN2 and MN3 is connected to the drain electrode of MN4 jointly, the source ground of MN4, and the grid of MN4 is connected to bias voltage Vbias.The source electrode of MP5 is connected to outer power voltage VDDA, and drain electrode is connected to negative feedback resistor string (R31, R32, R33, R34, R35, R36) as the negative feedback end through an end of resistance R 31.
The invention is not restricted to above-mentioned differential amplifier, also can use other can realize the differential amplifier of said function.
Reference voltage Vref obtains needed internal work voltage VDD after resistance string is boosted:
VDD＝[(R31+R32+R33+R34+R35+R36)/(R34+R35+R36)]*Vref (2)
Improve the stability of internal work voltage VDD by switch MOS pipe MN30, MN31, MN32 and MN33.Specifically, be lower than low temperature threshold value DL and when making internal work voltage VDD higher, temperature sensing circuit 210 produces low temperature detection signal LTEMP, make switch MOS pipe MN31 conducting when temperature drops to, at this moment,
VDD＝[(R31+R32+R34+R35+R36)/(R34+R35+R36)]*Vref (3)
Thereby reduce the output of internal voltage generator.When temperature is increased to when being higher than high temperature threshold value DH and making that internal work voltage VDD is on the low side, temperature sensing circuit 210 produces high temperature detection signal HTEMP, makes switch MOS pipe MN33 conducting, at this moment,
VDD＝[(R31+R32+R33+R34+R36)/(R34+R36)]*Vref (4)
Thereby the output of rising internal voltage generator.
LTEST, HTEST also are used for test with identical principle of work and regulate operating operation, in order to adjust the variation of internal work voltage with chip manufacturing process.When chip testing, measure internal work voltage VDD, and it is adjusted to desired value, to reduce owing to process conditions change the influence that brings.
Can realize needed degree of regulation by the size that changes resistance R 32, R33, R34 and R35.
In exemplary embodiment of the present invention, MN30, MN31, MN32 and MN33 are the NMOS pipe, but also can realize with similar on-off elements such as PMOS pipe or transmission gates.
In addition, be parallel with respectively under the situation of on-off element at R32 and R33, the order of connecting between R31, R32 and the R33 can change.Be parallel with respectively under the situation of on-off element at R34 and R35, the order of connecting between R34, R35 and the R36 can change.Obviously, after the series sequence of above-mentioned resistance changes, do not influence the function of circuit.
In addition, the internal voltage generator that is not limited to according to the present invention is used for the IC chip, also can be used for the device that other need generate builtin voltage.
The internal voltage generator that the present invention proposes is by integrated temperature testing circuit and mu balanced circuit, can improve the stability of internal work voltage, thereby solved at present on the market the IC chip integrated voltage generator exist output bigger with the variation of flow-route and temperature, cause the problem of interlock circuit job insecurity.
Claims (7)
1, a kind of internal voltage generator is characterized in that comprising:
Temperature sensing circuit when the detected temperature of described temperature sensing circuit is higher than the predetermined high temperature threshold value, generates the high temperature detection signal, when the detected temperature of described temperature sensing circuit is lower than the predetermined low temperature level threshold value, generates the low temperature detection signal;
Voltage conversion circuit, described voltage conversion circuit is converted to internal work voltage according to high temperature detection signal or low temperature detection signal that temperature sensing circuit produced with outer power voltage.
2, internal voltage generator as claimed in claim 1 is characterized in that, described temperature sensing circuit comprises:
The temperature sensitive device produces high temperature according to environment temperature and detects voltage and low temperature detection voltage;
High temperature detection signal maker produces the high temperature detection signal when described high temperature detects when voltage is lower than reference value;
Low temperature detection signal maker produces the low temperature detection signal when described low temperature detects when voltage is higher than reference value.
3, internal voltage generator as claimed in claim 2, it is characterized in that, described temperature sensitive device is made of current mirror, temp .-sensitive diodes and first resistance, second resistance and the 3rd resistance, the output terminal of current mirror and first resistance, second resistance, the 3rd resistance and temp .-sensitive diodes anodal in sequential series, the minus earth of temp .-sensitive diodes, the voltage-to-ground of the node between first resistance and second resistance is that low temperature detects voltage, and the voltage-to-ground of the node between second resistance and the 3rd resistance is that high temperature detects voltage.
4, internal voltage generator as claimed in claim 1 is characterized in that, described voltage conversion circuit comprises:
Generating circuit from reference voltage is converted to outer power voltage the reference voltage that is lower than internal work voltage;
Mu balanced circuit generates internal reference voltage by reference voltage is boosted, and when receiving the high temperature detection signal that temperature sensing circuit produces, increases the internal reference voltage that generates; When receiving the low temperature detection signal that temperature sensing circuit produces, reduce the internal reference voltage that generates.
5, internal voltage generator as claimed in claim 4, it is characterized in that described mu balanced circuit comprises: the differential amplifier that forms resistance string, first switch and second switch and have negative feedback structure by the 4th resistance, the 5th resistance, the 6th resistance, the series connection of the 7th resistance; Described resistance string is connected to the negative feedback end of differential amplifier through the 4th resistance, and described resistance string is through the 7th resistance eutral grounding; First switch and second switch are in parallel with the 5th resistance and the 6th resistance respectively, and first switch and second switch are respectively by low temperature detection signal and the control of high temperature detection signal and conducting; The first input end of differential amplifier is connected to reference voltage, and second input end is connected between the 5th resistance and the 6th resistance; Described negative feedback structure comprises PMOS pipe, and the source electrode of a PMOS pipe is connected to outer power voltage, and grid is connected to first output terminal anti-phase with first input end, and drain electrode is as the negative feedback end of differential amplifier.
6, internal voltage generator as claimed in claim 5 is characterized in that, described differential amplifier comprises: the 2nd PMOS pipe, the 3rd PMOS pipe, NMOS pipe, the 2nd NMOS pipe, the 3rd NMOS pipe; The source electrode of the 2nd PMOS pipe and the 3rd PMOS pipe is connected to outer power voltage VDDA jointly, and its grid is connected to the drain electrode of the 2nd NMOS pipe and the drain electrode of the 2nd PMOS pipe jointly; The drain electrode of the 3rd PMOS pipe is connected to the grid of a PMOS as described first output terminal, and is connected to the drain electrode of a NMOS pipe simultaneously; The grid of the one NMOS pipe is as described first input end, and the grid of the 2nd NMOS pipe is as described second output terminal; The source electrode of the one NMOS pipe and the 2nd NMOS pipe is connected to the drain electrode of the 3rd NMOS pipe jointly, the source ground of the 3rd NMOS pipe, and the grid of the 3rd NMOS pipe connects bias voltage.
7, internal voltage generator as claimed in claim 5, it is characterized in that, between described the 4th resistance and described the 5th resistance, be in series with the 8th resistance with the 3rd switch in parallel, be in series with the 9th resistance with the 4th switch in parallel between described the 6th resistance and described the 7th resistance, the 3rd switch and the 4th switch are used to respectively reduce and increase the signal controlling of internal work voltage and conducting according to chip manufacturing process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100943325A CN101571726A (en) | 2008-04-28 | 2008-04-28 | Internal voltage generator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100943325A CN101571726A (en) | 2008-04-28 | 2008-04-28 | Internal voltage generator |
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| Publication Number | Publication Date |
|---|---|
| CN101571726A true CN101571726A (en) | 2009-11-04 |
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ID=41231097
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|---|---|---|---|
| CNA2008100943325A Pending CN101571726A (en) | 2008-04-28 | 2008-04-28 | Internal voltage generator |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103713676A (en) * | 2012-09-28 | 2014-04-09 | 三星电子株式会社 | Method for controlling voltage based on temperature and terminal supporting the same |
| CN112447144A (en) * | 2019-08-27 | 2021-03-05 | 三星显示有限公司 | Light emitting apparatus and display apparatus having the same |
| CN112485645A (en) * | 2020-11-30 | 2021-03-12 | 海光信息技术股份有限公司 | Chip test temperature control method, control system, temperature control board card and test system |
-
2008
- 2008-04-28 CN CNA2008100943325A patent/CN101571726A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103713676A (en) * | 2012-09-28 | 2014-04-09 | 三星电子株式会社 | Method for controlling voltage based on temperature and terminal supporting the same |
| US9632520B2 (en) | 2012-09-28 | 2017-04-25 | Samsung Electronics Co., Ltd. | Method for controlling voltage based on temperature and terminal supporting the same |
| CN103713676B (en) * | 2012-09-28 | 2018-08-10 | 三星电子株式会社 | The terminal of method and support this method based on temperature control voltage |
| CN112447144A (en) * | 2019-08-27 | 2021-03-05 | 三星显示有限公司 | Light emitting apparatus and display apparatus having the same |
| CN112485645A (en) * | 2020-11-30 | 2021-03-12 | 海光信息技术股份有限公司 | Chip test temperature control method, control system, temperature control board card and test system |
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Application publication date: 20091104 |