CN105099445A - Frequency control method and circuit for ring oscillator - Google Patents
Frequency control method and circuit for ring oscillator Download PDFInfo
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- CN105099445A CN105099445A CN201410197224.6A CN201410197224A CN105099445A CN 105099445 A CN105099445 A CN 105099445A CN 201410197224 A CN201410197224 A CN 201410197224A CN 105099445 A CN105099445 A CN 105099445A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L1/00—Stabilisation of generator output against variations of physical values, e.g. power supply
- H03L1/02—Stabilisation of generator output against variations of physical values, e.g. power supply against variations of temperature only
Abstract
Provided are a frequency control method and circuit for a ring oscillator. The method comprises the following steps: obtaining, by means of a current bias circuit, a current having a positive temperature coefficient; using the current having the positive temperature coefficient to obtain a voltage having a positive temperature coefficient that is in set proportion to the current having the positive temperature coefficient; and applying the voltage having the positive temperature coefficient to a ring oscillator to obtain a stable output frequency. The method prevents the output frequency of the ring oscillator from being affected by temperature, and greatly improves stability of the output frequency. The method prevents an external power source from affecting the output frequency of the ring oscillator, and provides a good power supply rejection ratio. When each component of the current bias circuit, a voltage generation circuit and the ring oscillator is manufactured by the same process, the change of a threshold voltage of each component with temperature is identical, and the influence of the manufacturing process to the output frequency of the ring oscillator can be compensated.
Description
Technical field
The present invention relates to control circuit technical field, particularly, relate to a kind of control method for frequency and circuit of ring oscillator.
Background technology
Clock circuit is requisite module in modern chips system, for system provides accurate clock.The implementation of clock circuit mainly contains crystal oscillator, PLL clock circuit, relaxation oscillator, ring oscillator etc.Ring oscillator is because structure is simple and the characteristic of low-power consumption, and the occasion not high at frequency accuracy requirement is widely used.But common ring oscillator affects comparatively large by the external factor such as power supply, ambient temperature, the impact simultaneously by manufacturing process is comparatively large, and therefore, the output frequency precision of common ring oscillator is poor, affects the performance of chip system.
Current have kinds of schemes to carry out structural optimal design to ring oscillator.Wherein, a kind of comparatively common structure is circularize oscillator by the inverter group of current limited, and therefore the frequency of oscillation of oscillator is relevant to electric current, by improving reference current generation unit, thus improves the ambient temperature characteristic of output frequency.
But the precision of the last output frequency of this kind of scheme depend primarily on reference current generation unit design whether can just in time offset corresponding temperature coefficient; Simultaneously because oscillator is directly powered by supply voltage, output frequency affects larger by outer power voltage.
As mentioned above, the output frequency of common ring oscillator is comparatively large by the impact of manufacturing process, supply voltage and ambient temperature, causes the frequency accuracy of output clock cannot meet the requirement of system.
For the ring oscillator scheme that the inverter by current limited forms, need appropriate design current generating circuit, configure suitable temperature coefficient and compensate with the temperature characterisitic of oscillator below.Because design does not consider that oscillator is subject to the impact of supply voltage, device fabrication, therefore, the precision of the output frequency of ring oscillator is restricted, and better can not meet the requirement of system to clock.
Summary of the invention
The invention provides a kind of control method for frequency and circuit of ring oscillator, the output frequency precision in order to solve the existence of existing ring oscillator is low waits deficiency.
For solving the problems of the technologies described above, the invention provides a kind of control method for frequency of ring oscillator, the method comprises the following steps:
The electric current that one has positive temperature coefficient is obtained by current biasing circuit;
Utilize the electric current with positive temperature coefficient to obtain one the to become setting ratio voltage with positive temperature coefficient with the electric current with positive temperature coefficient;
The voltage with positive temperature coefficient is applied on ring oscillator, obtains stable output frequency.
Preferably, obtain an electric current with positive temperature coefficient by current biasing circuit to be specially:
The electric current that current biasing circuit makes external power source produce in current biasing circuit flows through the device that has positive temperature coefficient; The parameter of the device with positive temperature coefficient is set, obtains the electric current that has positive temperature coefficient.
Preferably, the electric current that current biasing circuit makes external power source produce in current biasing circuit flows through a device with positive temperature coefficient and is specially:
Current biasing circuit makes external power source in current biasing circuit, produce a road not by the electric current that external power source controls by current mirroring circuit; The electric current do not controlled by external power source had the device of positive temperature coefficient by one.
Preferably, utilizing the electric current with positive temperature coefficient to obtain one becomes the voltage with positive temperature coefficient of setting ratio to be specially with the electric current with positive temperature coefficient:
The electric current access voltage generation circuit of positive temperature coefficient will be had; Device parameters in voltage generation circuit is set, obtains one the to become setting ratio voltage with positive temperature coefficient with the electric current with positive temperature coefficient.
Present invention also offers a kind of frequency control circuit of ring oscillator, this circuit comprises:
Current biasing circuit, for obtaining the electric current that has positive temperature coefficient;
Voltage generation circuit; One the to become setting ratio voltage with positive temperature coefficient with the electric current with positive temperature coefficient is obtained for utilizing the electric current with positive temperature coefficient;
Ring oscillator, obtains stable output frequency for utilizing the voltage with positive temperature coefficient.
Preferably, current biasing circuit comprises:
First current mirroring circuit, the second current mirroring circuit and the first resistance R1;
First current mirroring circuit comprises the first transistor MP1 and transistor seconds MP2; The source electrode of the first transistor MP1 is connected with external power source respectively with the source electrode of transistor seconds MP2; The grid of the first transistor MP1 is connected with the grid of transistor seconds MP2; The grid of transistor seconds MP2 is connected with drain electrode;
Second current mirroring circuit comprises third transistor MN1 and the 4th transistor MN2; The grid of third transistor MN1 is connected with the grid of the 4th transistor MN2; The grid of third transistor MN1 is connected with the drain electrode of the first transistor MP1 respectively with drain electrode; The source ground of three transistor MN1; The drain electrode of affiliated 4th transistor MN2 is connected with the drain electrode of transistor seconds MP2; The source electrode of affiliated 4th transistor MN2 is connected with one end of the first resistance; Second end ground connection of the first resistance.
Preferably, voltage generation circuit comprises:
5th transistor MP3, the 6th transistor MP4, the 7th transistor MP5, the 8th transistor MN3, current source and the second resistance R2;
The grid of the 5th transistor MP3 is connected with the grid of the first transistor MP1 respectively with the grid of the 6th transistor MP4; The source electrode of the 5th transistor MP3 is connected with external power source respectively with the source electrode of the 6th transistor MP4; The drain electrode of the 5th transistor MP3 is connected with the grid of the 7th transistor MP5 and the first end of the second resistance respectively; Second end ground connection of the second resistance; The drain electrode of the 6th transistor MP4 is connected with the source electrode of the 7th transistor MP5 and the drain electrode of the 8th transistor MN3 respectively; The drain electrode of the 7th transistor MP5 is connected with the grid of the 8th transistor MN3 and the positive pole of current source respectively; The minus earth of current source; The source ground of the 8th transistor MN3.
Preferably, ring oscillator comprises K inverter, K be more than or equal to 3 odd number; The power end of inverter is connected with the drain electrode of the 6th transistor MP4 respectively; The earth terminal ground connection of inverter.
The beneficial effect of technique scheme of the present invention is as follows:
In technique scheme, produced the electric current with positive temperature coefficient by current biasing circuit, and then obtain the voltage with positive temperature coefficient, by the setting to device parameters, the output frequency not temperature influence of ring oscillator can be made, greatly provide the stability of output frequency; By voltage generation circuit for ring oscillator provides voltage, avoid the impact of external power source on ring oscillator output frequency, there is good power supply rejection; When each device of current biasing circuit, voltage generation circuit and ring oscillator adopts same manufacturing process, the size variation with temperature of the threshold voltage of each device is also identical, can compensate the impact of manufacturing process on ring oscillator output frequency.
Accompanying drawing explanation
Accompanying drawing is used to provide a further understanding of the present invention, and forms a part for specification, together with embodiments of the present invention for explaining the present invention, is not construed as limiting the invention.In the accompanying drawings:
Fig. 1 is the method flow diagram of embodiment 1;
Fig. 2 is the schematic diagram of the ring oscillator frequency control circuit of embodiment 3.
Embodiment
Below in conjunction with drawings and Examples, the specific embodiment of the present invention is described in further detail.Following examples for illustration of the present invention, but are not used for limiting the scope of the invention.
Wait in order to the output frequency precision solving the existence of existing ring oscillator is low not enough, the invention provides a kind of control method for frequency and circuit of ring oscillator.
Embodiment 1
Present embodiments provide a kind of control method for frequency of ring oscillator, as shown in Figure 1, the method comprises the following steps the flow chart of the present embodiment method:
S1: obtain the electric current that has positive temperature coefficient by current biasing circuit;
S2: utilize the electric current with positive temperature coefficient to obtain one the to become setting ratio voltage with positive temperature coefficient with the electric current with positive temperature coefficient;
S3: be applied on ring oscillator by the voltage with positive temperature coefficient, obtains stable output frequency.
The present embodiment produces the electric current with positive temperature coefficient by current biasing circuit, and then obtain the voltage with positive temperature coefficient, by the setting to device parameters, the output frequency not temperature influence of ring oscillator can be made, greatly provide the stability of output frequency; By voltage generation circuit for ring oscillator provides voltage, avoid the impact of external power source on ring oscillator output frequency, there is good power supply rejection; When each device of current biasing circuit, voltage generation circuit and ring oscillator adopts same manufacturing process, the size variation with temperature of the threshold voltage of each device is also identical, can compensate the impact of manufacturing process on ring oscillator output frequency.
In order to avoid the voltage fluctuation of external power source is on the impact of device in the present embodiment, the present embodiment adopts the independent control of current mirror realization to electric current.Therefore step S1 obtains an electric current with positive temperature coefficient by current biasing circuit is specially:
Current biasing circuit makes external power source in current biasing circuit, produce a road not by the electric current that external power source controls by current mirroring circuit; The electric current do not controlled by external power source had the device of positive temperature coefficient by one.Positive temperature coefficient refers to the rising along with temperature, and the electric property (magnitude of voltage, current value or resistance value etc.) of device also raises; In like manner, negative temperature coefficient refers to the reduction along with temperature, and the electric property (magnitude of voltage, current value or resistance value etc.) of device also reduces.As, the CMOS inverter that ring oscillator adopts just has negative temperature coefficient.
Because a circuit comprises multiple electricity consumption device usually, each device varies with temperature its electric property may be different, so need to select the parameter of the device in circuit or adjust.The present embodiment is then set the parameter of the device with positive temperature coefficient, obtains the electric current that has positive temperature coefficient.
The step S2 of the present embodiment utilizes the electric current with positive temperature coefficient to obtain one to become the voltage with positive temperature coefficient of setting ratio to be specially with the electric current with positive temperature coefficient:
After obtaining having the electric current of positive temperature coefficient, the electric current access voltage generation circuit of positive temperature coefficient will be had, just can obtain the voltage with positive temperature coefficient on resistance or other devices; By setting the device parameters in voltage generation circuit, one the to become setting ratio voltage with positive temperature coefficient with the electric current with positive temperature coefficient just can be obtained.Being meant to of setting ratio: the impact of temperature be subject to according to the output frequency of ring oscillator and the impact of voltage, the parameter of device is set, temperature and the impact of voltage on the output frequency of ring oscillator are cancelled out each other, thus reaches the object of stabilized frequency.
Embodiment 2
The present embodiment and embodiment 1 belong to identical inventive concept, present embodiments provide a kind of frequency control circuit of ring oscillator, and this circuit comprises:
Current biasing circuit, for obtaining the electric current that has positive temperature coefficient;
Voltage generation circuit; One the to become setting ratio voltage with positive temperature coefficient with the electric current with positive temperature coefficient is obtained for utilizing the electric current with positive temperature coefficient;
Ring oscillator, obtains stable output frequency for utilizing the voltage with positive temperature coefficient.
Wherein, current biasing circuit comprises:
First current mirroring circuit, the second current mirroring circuit and the first resistance R1;
First current mirroring circuit comprises the first transistor MP1 and transistor seconds MP2; The source electrode of the first transistor MP1 is connected with external power source respectively with the source electrode of transistor seconds MP2; The grid of the first transistor MP1 is connected with the grid of transistor seconds MP2; The grid of transistor seconds MP2 is connected with drain electrode;
Second current mirroring circuit comprises third transistor MN1 and the 4th transistor MN2; The grid of third transistor MN1 is connected with the grid of the 4th transistor MN2; The grid of third transistor MN1 is connected with the drain electrode of the first transistor MP1 respectively with drain electrode; The source ground of third transistor MN1; The drain electrode of affiliated 4th transistor MN2 is connected with the drain electrode of transistor seconds MP2; The source electrode of affiliated 4th transistor MN2 is connected with one end of the first resistance; Second end ground connection of the first resistance.
Voltage generation circuit comprises:
5th transistor MP3, the 6th transistor MP4, the 7th transistor MP5, the 8th transistor MN3, current source and the second resistance R2;
The grid of the 5th transistor MP3 is connected with the grid of the first transistor MP1 respectively with the grid of the 6th transistor MP4; The source electrode of the 5th transistor MP3 is connected with external power source respectively with the source electrode of the 6th transistor MP4; The drain electrode of the 5th transistor MP3 is connected with the grid of the 7th transistor MP5 and the first end of the second resistance respectively; Second end ground connection of the second resistance; The drain electrode of the 6th transistor MP4 is connected with the source electrode of the 7th transistor MP5 and the drain electrode of the 8th transistor MN3 respectively; The drain electrode of the 7th transistor MP5 is connected with the grid of the 8th transistor MN3 and the positive pole of current source respectively; The minus earth of current source; The source ground of the 8th transistor MN3.
The ring oscillator of the present embodiment adopts common ring oscillator structure, comprises K inverter, K be more than or equal to 3 odd number; The power end of inverter is connected with the drain electrode of the 6th transistor MP4 respectively; The earth terminal ground connection of inverter.Circlewise, join end to end between device inverter group looping oscillator.
The present embodiment produces the electric current with positive temperature coefficient by current biasing circuit, and then obtain the voltage with positive temperature coefficient, by the setting to device parameters, the output frequency not temperature influence of ring oscillator can be made, greatly provide the stability of output frequency; By voltage generation circuit for ring oscillator provides voltage, avoid the impact of external power source on ring oscillator output frequency, there is good power supply rejection; When each device of current biasing circuit, voltage generation circuit and ring oscillator adopts same manufacturing process, the size variation with temperature of the threshold voltage of each device is also identical, can compensate the impact of manufacturing process on ring oscillator output frequency.
Embodiment 3
The present invention is described in detail by an actual scene for the present embodiment.The schematic diagram of the ring oscillator frequency control circuit of the present embodiment as shown in Figure 2.
The present embodiment comprises a PTAT (proportionaltoabsolutetemperature, with PTAT), and current offset produces circuit (corresponding above-mentioned current biasing circuit), (V represents voltage to ring oscillator control voltage VOSC; OSC is oscillator, oscillator) produce circuit (corresponding above-mentioned voltage generation circuit) and ring oscillator three part.Wherein, ring oscillator stage comprises K level CMOS inverter (K>=3 is odd number).The circuit diagram of a K level ring oscillator is given in Fig. 2.
Current offset produces circuit and is made up of the first transistor MP1, transistor seconds MP2, third transistor MN1, the 4th transistor MN2 and the first resistance R1.The grid of the first transistor MP1 and transistor seconds MP2 links together formation current mirror, the grid of transistor seconds MP2 connects its drain electrode simultaneously, the grid of third transistor MN1 links together with drain electrode and is connected with the drain electrode of the first transistor MP1, the grid of the 4th transistor MN2 and the grid of third transistor MN1 connect, the drain electrode of the 4th transistor MN2 is connected with the drain electrode of transistor seconds MP2, the source ground of third transistor MN1, the source electrode of the 4th transistor MN2 connects one end of the first resistance R1, other one end of first resistance R1 is connected to ground.
Ring oscillator control voltage VOSC produces circuit and is made up of the 5th transistor MP3, the 6th transistor MP4, the 7th transistor MP5, the 8th transistor MN3, the second resistance R2 and current source I0.The grid of the 5th transistor MP3, the 6th transistor MP4 is connected with the grid of transistor seconds MP2 with the first transistor MP1, the drain electrode of the 5th transistor MP3 is connected with one end of the second resistance R2, the grid of the 7th transistor MP5 respectively, the other end ground connection of the second resistance R2, the drain electrode of the 6th transistor MP4 is connected with the source electrode of the 7th transistor MP5 with the drain electrode of the 8th transistor MN3, the drain electrode of the 7th transistor MP5 is connected with the grid of current source I0, the 8th transistor MN3, the source ground of the 8th transistor MN3.
5th transistor MP3 provides the electric current of positive temperature coefficient to the second resistance R2, and on the second resistance R2, obtain the voltage of a positive temperature coefficient, current source I0 is used for determining the quiescent current in the 7th transistor MP5, thus determines the voltage between the grid of the 7th transistor MP5 and source electrode; 6th transistor MP4 is used for providing operating current to the 7th transistor MP5, the 8th transistor MN3 and ring oscillator; The source voltage of the 7th transistor MP5 is the gate source voltage of the 7th transistor MP5 and the voltage sum of the second resistance R2, i.e. the control voltage VOSC of ring oscillator; 8th transistor MN3 is used for regulating and stablizes VOSC size; When VOSC increases, the drain voltage of the 7th transistor MP5, the grid voltage of the 8th transistor MN3 increase, and the 8th transistor MN3 is drop-down to VOSC, suppress the increase of VOSC; On the contrary, when VOSC reduces, the On current of the 8th transistor MN3 reduces, and suppresses the reduction of VOSC.
Ring oscillator circuit is made up of K level inverter, and the power supply of CMOS inverter connects the drain electrode of the 8th transistor MN3, i.e. VOSC node.The output of first order inverter connects the input of second level inverter, the output of second level inverter connects the input of the third level, by that analogy, the output of K-1 level inverter connects the input of K level inverter, and the output of K level inverter connects the input of first order inverter.
Ring oscillator is made up of common CMOS inverter.The output frequency of the ring oscillator of the type reduces with the rising of temperature, and meanwhile, output frequency increases with the rising of the supply voltage of ring oscillator.In order to ensure the output frequency not temperature influence of ring oscillator, needing the supply voltage of ring oscillator to raise with the rising of temperature, ensureing that the output frequency of ring oscillator does not vary with temperature.In order to ensure that the output frequency of ring oscillator is not by the impact of supply voltage, need the supply voltage of chain of inverters in ring oscillator not by the impact of outer power voltage.The output frequency of ring oscillator changes along with the change of technique, mainly caused by the threshold voltage variation of device in inverter, in order to the change of compensate for process, need the control voltage of ring oscillator to change with the change of technique, compensate the output frequency change because technique change causes.
Wherein, the output current I of PTAT current offset generation circuit is:
Wherein, V
gs, MN1for the voltage difference between the grid of third transistor MN1 and source electrode; V
gs, MN2it is the voltage difference between the grid of the 4th transistor MN2 and source electrode; Δ V
gSfor V
gs, MN1and V
gs, MN2voltage difference.
Because third transistor MN1 and the 4th transistor MN2 is operated in sub-threshold region, therefore, formula (1) can be written as further:
Wherein, N is the ratio of the breadth length ratio of the 4th transistor MN2 and third transistor MN1; V
tfor thermal voltage, it has positive temperature coefficient; N is the sub-threshold slope factor.
When resistance adopts the poly resistance of low-temperature coefficient, this electric current has positive temperature coefficient.By PMOS current mirror, the second resistance R2 produces the voltage be directly proportional to temperature, and the threshold voltage of the 7th transistor MP5 is negative temperature coefficient voltage, by suitably adjusting the size of the second resistance R2, can obtain the voltage VOSC of a positive temperature coefficient:
Wherein, V
thfor the threshold voltage of metal-oxide-semiconductor
The first, VOSC is a voltage irrelevant with outer power voltage, therefore, it is possible to ensure ring oscillator not by the impact of outer power voltage, has high power supply suppression characteristic; The second, VOSC is the voltage of a positive temperature coefficient, just in time compensate for the negative temperature characteristic of CMOS ring oscillator output frequency, ensure that output frequency not by the impact of ambient temperature; Three, VOSC is the voltage with device threshold voltage change, the pressure reduction that the operational characteristic that compensate for CMOS ring oscillator is brought.
The output frequency of CMOS ring oscillator reduces with the rising of temperature, and the data in one group of reality are: under the supply voltage of ring oscillator is 1.2V condition, when temperature is-40 °, and output frequency is 35MHz; When temperature is 25 °, the output frequency of oscillator is 30MHz; When temperature is 90 °, output frequency is 25MHz.
In order to compensate the negative temperature characteristic of annular oscillator output frequencies, the supply voltage of ring oscillator is needed to have positive temperature characterisitic.When ambient temperature is 25 °, when supply voltage is 1.1V, ring oscillator output frequency is 25MHz; When supply voltage is 1.2V, output frequency is 30MHz; When supply voltage is 1.3V, output frequency is 35MHz.The positive temperature characterisitic of the supply voltage of ring oscillator just in time can compensate the negative temperature characteristic of self, makes the output frequency of ring oscillator not variation with temperature and changing.
From above-mentioned data, when variations in temperature is ± Δ 65 °, and change in voltage be ± Δ 0.1V time, the output frequency of ring oscillator is identical.In like manner, can by adjustment to device parameters, what make the change of voltage and temperature is changed to setting ratio, can offset the change of change and temperature to the interference of the output frequency of ring oscillator simultaneously.When device, ambient temperature or other factors change, the method adjust flat rate and above-mentioned similar, repeats no more herein.
Visible, the present invention has technological compensa tion, temperature compensation characteristic, has higher power supply suppression characteristic simultaneously, can ensure the high accuracy of oscillator output frequencies.
The ring oscillator that the present invention proposes, comprises at least one current generating circuit, oscillator control voltage produces circuit and ring oscillator circuit.Ring oscillator control voltage of the present invention produces the voltage that circuit can produce a positive temperature coefficient, compensates the negative temperature characteristic of the anti-phase type ring oscillator of common CMOS; The frequency fluctuation that the technique change that the control voltage of ring oscillator can carry out compensated oscillator with the technique change of device is brought; And control voltage does not affect by external power source, ensure that the high power supply suppression characteristic of ring oscillator.Ring oscillator control voltage produces the control voltage of circuit evolving oscillator, this voltage does not need to carry out process corrections, the size of this voltage and the absolute value of the first resistance R1 and the second resistance R2 have nothing to do, only relevant to the ratio between the first resistance R1 and the second resistance R2.In current generating circuit, third transistor MN1, the 4th transistor MN2, the first transistor MP1, transistor seconds MP2 and the 5th transistor MP3, the 6th transistor MP4 can use field effect transistor M OSFET, also can use bipolar transistor BJT.
The present invention has following technical advantage:
Technological merit one: adopt positive temperature coefficient voltage to compensate the negative temperature characteristic of ring oscillator, utilize the ratio of two resistance can obtain an accurate positive temperature coefficient voltage;
Technological merit two: the power supply suppression characteristic of output frequency is higher; Utilize ring oscillator control voltage to produce circuit and produce a control voltage had nothing to do with supply voltage, the high power supply achieving ring oscillator output frequency suppresses.
Technological merit three: the control voltage of ring oscillator changes with the change of device fabrication, achieves the technological compensa tion to ring oscillator output frequency.
Technological merit four: low-power consumption, current biasing circuit is owing to being operated in sub-threshold region, and therefore operating current is less, and power consumption is lower.
Technological merit five: the output frequency of ring oscillator realizes technological compensa tion, and do not need the size to the first resistance R1 and the second resistance R2, size revises, and just can realize high-precision oscillator.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, although with reference to previous embodiment to invention has been detailed description, for a person skilled in the art, it still can be modified to the technical scheme described in foregoing embodiments, or carries out equivalent replacement to wherein portion of techniques feature.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. a control method for frequency for ring oscillator, is characterized in that, the method comprises the following steps:
The electric current that one has positive temperature coefficient is obtained by current biasing circuit;
The electric current described in utilization with positive temperature coefficient obtains one the to become setting ratio voltage with positive temperature coefficient with the described electric current with positive temperature coefficient;
The described voltage with positive temperature coefficient is applied on ring oscillator, obtains stable output frequency.
2. the method for claim 1, is characterized in that, describedly obtains an electric current with positive temperature coefficient by current biasing circuit and is specially:
The electric current that described current biasing circuit makes external power source produce in described current biasing circuit flows through the device that has positive temperature coefficient; The described parameter with the device of positive temperature coefficient is set, obtains the electric current that has positive temperature coefficient.
3. method as claimed in claim 2, it is characterized in that, the electric current that described current biasing circuit makes external power source produce in described current biasing circuit flows through a device with positive temperature coefficient and is specially:
Described current biasing circuit makes external power source in described current biasing circuit, produce a road not by the electric current that external power source controls by current mirroring circuit; The described electric current not controlled by external power source had the device of positive temperature coefficient by one.
4. method as claimed in claim 3, it is characterized in that, the electric current described in described utilization with positive temperature coefficient obtains one and becomes the voltage with positive temperature coefficient of setting ratio to be specially with the described electric current with positive temperature coefficient:
By the described electric current access voltage generation circuit with positive temperature coefficient; Device parameters in described voltage generation circuit is set, obtains one the to become setting ratio voltage with positive temperature coefficient with the described electric current with positive temperature coefficient.
5. a frequency control circuit for ring oscillator, is characterized in that, this circuit comprises:
Current biasing circuit, for obtaining the electric current that has positive temperature coefficient;
Voltage generation circuit, the electric current for having positive temperature coefficient described in utilizing obtains one the to become setting ratio voltage with positive temperature coefficient with the described electric current with positive temperature coefficient;
Ring oscillator, obtains stable output frequency for the voltage described in utilizing with positive temperature coefficient.
6. circuit as claimed in claim 5, it is characterized in that, described current biasing circuit comprises:
First current mirroring circuit, the second current mirroring circuit and the first resistance R1;
Described first current mirroring circuit comprises the first transistor MP1 and transistor seconds MP2; The source electrode of described the first transistor MP1 is connected with external power source respectively with the source electrode of transistor seconds MP2; The grid of described the first transistor MP1 is connected with the grid of transistor seconds MP2; The grid of described transistor seconds MP2 is connected with drain electrode;
Described second current mirroring circuit comprises third transistor MN1 and the 4th transistor MN2; The grid of described third transistor MN1 is connected with the grid of the 4th transistor MN2; The grid of described third transistor MN1 is connected with the drain electrode of described the first transistor MP1 respectively with drain electrode; The source ground of described third transistor MN1; The drain electrode of affiliated 4th transistor MN2 is connected with the drain electrode of described transistor seconds MP2; The source electrode of affiliated 4th transistor MN2 is connected with one end of described first resistance; Second end ground connection of described first resistance.
7. circuit as claimed in claim 6, it is characterized in that, described voltage generation circuit comprises:
5th transistor MP3, the 6th transistor MP4, the 7th transistor MP5, the 8th transistor MN3, current source and the second resistance R2;
The grid of described 5th transistor MP3 is connected with the grid of described the first transistor MP1 respectively with the grid of the 6th transistor MP4; The source electrode of described 5th transistor MP3 is connected with external power source respectively with the source electrode of the 6th transistor MP4; The drain electrode of described 5th transistor MP3 is connected with the described grid of the 7th transistor MP5 and the first end of the second resistance respectively; Second end ground connection of described second resistance; The drain electrode of described 6th transistor MP4 is connected with the source electrode of described 7th transistor MP5 and the drain electrode of the 8th transistor MN3 respectively; The drain electrode of described 7th transistor MP5 is connected with the described grid of the 8th transistor MN3 and the positive pole of current source respectively; The minus earth of described current source; The source ground of described 8th transistor MN3.
8. circuit as claimed in claim 7, it is characterized in that, described ring oscillator comprises K inverter, K be more than or equal to 3 odd number; The power end of described inverter is connected with the drain electrode of described 6th transistor MP4 respectively; The earth terminal ground connection of described inverter.
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| CN201410197224.6A CN105099445B (en) | 2014-05-12 | 2014-05-12 | The control method for frequency and circuit of a kind of ring oscillator |
| PCT/CN2014/093455 WO2015172555A1 (en) | 2014-05-12 | 2014-12-10 | Frequency control method and circuit for ring oscillator |
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| CN201410197224.6A CN105099445B (en) | 2014-05-12 | 2014-05-12 | The control method for frequency and circuit of a kind of ring oscillator |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5180995A (en) * | 1991-09-13 | 1993-01-19 | Mitsubishi Denki Kabushiki Kaisha | Temperature-compensated ring oscillator circuit formed on a semiconductor substrate |
| US20060097805A1 (en) * | 2004-09-14 | 2006-05-11 | Stmicroelectronics Sas | Temperature compensation for a voltage-controlled oscillator |
| US20090051443A1 (en) * | 2007-08-24 | 2009-02-26 | Illegems Paul F | Oscillator Stabilized for Temperature and Power Supply Variations |
| CN101751062A (en) * | 2008-12-01 | 2010-06-23 | 芯光飞株式会社 | Low noise reference circuit of improving frequency variation of ring oscillator |
| CN103684354A (en) * | 2013-05-21 | 2014-03-26 | 国家电网公司 | Ring-shaped oscillation circuit, ring-shaped oscillator and realization method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2787639B2 (en) * | 1992-08-07 | 1998-08-20 | 三菱電機株式会社 | Pulse signal generation circuit and semiconductor memory device |
-
2014
- 2014-05-12 CN CN201410197224.6A patent/CN105099445B/en active Active
- 2014-12-10 WO PCT/CN2014/093455 patent/WO2015172555A1/en active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5180995A (en) * | 1991-09-13 | 1993-01-19 | Mitsubishi Denki Kabushiki Kaisha | Temperature-compensated ring oscillator circuit formed on a semiconductor substrate |
| US20060097805A1 (en) * | 2004-09-14 | 2006-05-11 | Stmicroelectronics Sas | Temperature compensation for a voltage-controlled oscillator |
| US20090051443A1 (en) * | 2007-08-24 | 2009-02-26 | Illegems Paul F | Oscillator Stabilized for Temperature and Power Supply Variations |
| CN101751062A (en) * | 2008-12-01 | 2010-06-23 | 芯光飞株式会社 | Low noise reference circuit of improving frequency variation of ring oscillator |
| CN103684354A (en) * | 2013-05-21 | 2014-03-26 | 国家电网公司 | Ring-shaped oscillation circuit, ring-shaped oscillator and realization method thereof |
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| US11424745B2 (en) | 2020-10-28 | 2022-08-23 | Changxin Memory Technologies, Inc. | Oscillation circuit and clock generation circuit |
| WO2022088782A1 (en) * | 2020-10-28 | 2022-05-05 | 长鑫存储技术有限公司 | Oscillation circuit |
| US11881858B2 (en) | 2020-10-28 | 2024-01-23 | Changxin Memory Technologies, Inc. | Clock generation circuit, memory and method for calibrating clock duty cycle |
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| CN113794446A (en) * | 2021-09-17 | 2021-12-14 | 上海磐启微电子有限公司 | RC oscillator with frequency not changing with temperature and power supply voltage |
| CN113794446B (en) * | 2021-09-17 | 2023-10-27 | 上海磐启微电子有限公司 | RC oscillator with frequency not changing with temperature and power supply voltage |
| CN114608622B (en) * | 2022-03-17 | 2023-10-13 | 电子科技大学 | On-chip electromagnetic sensor integrating temperature calibration |
| CN114608622A (en) * | 2022-03-17 | 2022-06-10 | 电子科技大学 | On-chip electromagnetic sensor integrated with temperature calibration |
| CN115664382A (en) * | 2022-10-12 | 2023-01-31 | 北京博瑞微电子科技有限公司 | Oscillator circuit |
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2015172555A1 (en) | 2015-11-19 |
| CN105099445B (en) | 2018-02-23 |
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