CN111313891B - Annular voltage-controlled oscillator - Google Patents
Annular voltage-controlled oscillator Download PDFInfo
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- CN111313891B CN111313891B CN201811516658.2A CN201811516658A CN111313891B CN 111313891 B CN111313891 B CN 111313891B CN 201811516658 A CN201811516658 A CN 201811516658A CN 111313891 B CN111313891 B CN 111313891B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/099—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
- H03L7/0995—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop the oscillator comprising a ring oscillator
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The invention provides a ring voltage-controlled oscillator, which relates to the field of integrated circuits, and comprises a bias generating unit, a starting detection unit and a ring oscillator unit which are sequentially connected, wherein the bias generating unit comprises a current source Iptat, a current source Iref, MOS tubes MP0, MP1 and MN0 and a resistor R, the starting detection unit comprises MOS tubes MP2 and MN1 and complementary switches phi 1 and phi 2, and the ring oscillator unit comprises MOS tubes MP3, MP4, MP5, MP6, MP7, MP8, MP9, MP10, MN2, MN3, MN4, MN5, MN6, MN7, MN8, MN9, MN10 and inverters INV0, INV1 and INV2. The problem of frequency offset caused by the change of the oscillation frequency along with the environmental temperature and the process change in the prior art is solved, and the more stable oscillation frequency is obtained; meanwhile, the vibration can be started quickly, and the requirement of the system on the starting speed of the oscillator is met.
Description
Technical Field
The present invention relates to the field of integrated circuits, and in particular, to a ring voltage controlled oscillator.
Background
On-chip voltage controlled oscillator circuits are widely used in various clock and high frequency carrier circuits. In the prior art, a ring voltage controlled oscillator in a current starvation mode is a common circuit structure.
As shown in fig. 1, a circuit diagram of a current starved mode ring voltage controlled oscillator is shown, which is formed by three stages of inverters. The ring oscillator comprises MOS transistors MP5, MN5, MP6, MN6, MP7 and MN7, wherein the input is Vtune and the output is Osc, the ring oscillator comprises a three-stage inverter, and the current sources of the first stage, the second stage and the third stage are respectively provided by MOS transistors MP2, MP3 and MP 4; the currents of the first stage, the second stage and the third stage are respectively provided by MOS tubes MN2, MN3 and MN 4. MP2, MP3, MP4 current sources are copied from MP0 current sources, MN2, MN3, MN4 current is copied from MN1 current sink, and MN1 current is determined by MP1 current sources copied from MP 0. The magnitude of the MP0 current source is determined by the gate input voltage Vtune of MN0. The oscillation frequency of the oscillator is determined by the delay time of the three-stage inverter, the delay time of the three-stage inverter is determined by the current magnitudes of the current source and the current sink, and the current magnitudes of the current source and the current sink are determined by the input voltage Vtune, so that the oscillation frequency of the oscillator is determined by the input voltage Vtune, and MP 0-MP 7 and MN 0-MN 7 form the three-stage ring oscillator in the current starvation mode.
In many application scenarios, the oscillation frequency of the on-chip voltage-controlled oscillator is required to be as small as possible along with the temperature and the process, and meanwhile, the on-chip voltage-controlled oscillator is required to be started quickly, so that the existing on-chip voltage-controlled oscillator is difficult to meet the application requirements. Accordingly, there is a need to provide an improved current starved mode ring voltage controlled oscillator that produces a more stable frequency than a conventional current starved mode ring oscillator while at the same time being able to guarantee a faster start-up speed than a conventional current starved mode ring oscillator.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a ring voltage controlled oscillator, which is used for solving the frequency offset problem generated by the change of the oscillating frequency along with the environmental temperature and the process variation in the prior art, so as to obtain a more stable oscillating frequency; meanwhile, the vibration can be started quickly, and the requirement of the system on the starting speed of the oscillator is met.
To achieve the above and other related objects, the present invention provides a ring voltage controlled oscillator, which includes a bias generating unit, a starting detection unit, and a ring oscillator unit connected in sequence, where the bias generating unit includes a current source Iptat, a current source Iref, MOS transistors MP0, MP1, MN0, and a resistor R, the starting detection unit includes MOS transistors MP2, MN1, and complementary switches Φ1 and Φ2, and the ring oscillator unit includes MOS transistors MP3, MP4, MP5, MP6, MP7, MP8, MP9, MP10, MN2, MN3, MN4, MN5, MN6, MN7, MN8, MN9, MN10, and inverters INV0, INV1, INV2.
Further, the current source Iptat is positively correlated with temperature, the current source Iref is independent of temperature, and the current sources Iptat and Iref are generated by a bandgap reference circuit.
Further, the MOS transistors MP0, MP1, MP2, MP3, MP4, MP5, MP6, MP7, MP8, MP9, MP10 are P-channel MOS transistors, and the MOS transistors MN0, MN1, MN2, MN3, MN4, MN5, MN6, MN7, MN8, MN9, MN10 are N-channel MOS transistors.
Further, the current sources Iptat and Iref of the bias generating unit flow down to GND, the gate and the drain of the MOS transistor MP0 are connected to the power Iptat and Iref, the source of the MOS transistor MP0 is connected to the power VDD, the gate is connected to the gate of the MP1, the source of the MOS transistor MP1 is connected to the power VDD, the drain is connected to the upper end of the resistor R downward, the frequency control voltage Vtune is led out, the lower end of the resistor R is connected to the drain and the gate of the MOS transistor MN0, and the source of the MOS transistor MN0 is connected to GND.
Further, the gate of the MOS tube MP2 of the oscillation starting detection unit is connected to the gate of MP0, the source is connected to the power supply VDD, the drain is connected to the upper end of the switch Φ1, the oscillation starting indication voltage Vstart is led out, the lower end of the switch Φ1 is connected to the gate of the MOS tube MN1, and is connected to the upper end of the switch Φ2, and the lower end of the switch Φ2 is connected to the source, drain, and GND of the MOS tube MN 1.
Further, the grid electrode of the MOS tube MN2 of the ring oscillator unit is connected with the frequency control voltage Vtune, the source electrode is connected with GND, and the drain electrode is connected with the drain electrode of the MN3 and the grid electrode and the drain electrode of the MP 3; the grid electrode of the MOS tube MN3 is connected with the starting indication voltage Vstart, and the source electrode is connected with GND; the drain electrode of the MOS tube MP3 is connected with the grid electrode, and the source electrode is connected with the power supply VDD; the grid electrode of the MOS tube MP4 is connected with the grid electrode of MP3, the source electrode is connected with the power supply VDD, and the drain electrode is connected with the grid electrode and the drain electrode of MN 4; the source electrode of the MOS tube MN4 is connected with GND; the grid electrode of the MOS tube MP5 is connected with the grid electrodes of MP3 and MP4, the source electrode is connected with the power supply VDD, and the drain electrode is connected with the source electrode of the MOS tube MP 8; the grid electrode of the MOS tube MP8 is connected with the grid electrode of the MN8, the drains of the MP10 and the MN10 and the input end of the inverter INV0, the drain electrode of the MOS tube MP8 is connected with the drain electrode of the MN8, and the grid electrodes of the MP9 and the MP 10; the source electrode of the MOS tube MN8 is connected with the drain electrode of the MN 5; the grid electrode of the MOS tube MN5 is connected with the grid electrode of the MN4, and the source electrode is connected with GND; the grid electrode of the MOS tube MP6 is connected with the grid electrodes of MP3, MP4 and MP5, the source electrode is connected with the power supply VDD, and the drain electrode is connected with the source electrode of MP 9; the drain electrode of the MOS tube MP9 is connected with the drain electrode of the MN10 and the grid electrodes of the MP10 and the MN 10; the source electrode of the MOS tube MN9 is connected with the drain electrode of the MN 6; the grid electrode of the MOS tube MN6 is connected with the grid electrodes of the MN4 and the MN5, and the source electrode is connected with the GND; the grid electrode of the MOS tube MP7 is connected with the grid electrodes of MP3, MP4 and MP5, the source electrode is connected with the power supply VDD, and the drain electrode is connected with MP 10; the source electrode of the MOS tube MN10 is connected with the drain electrode of the MN 7; the source electrode of the MOS tube MN7 is connected with GND; the output of the inverter INV0 is connected with the input of INV1 and controls the switch Φ1; the output of the inverter INV1 is connected with the input of INV2 and controls the switch Φ2; the output of the inverter INV2 is the output of the oscillator.
As described above, the ring voltage controlled oscillator of the present invention has the following beneficial effects: the invention can reduce the frequency offset generated by the change of the oscillation frequency along with the environmental temperature and the process change, and obtain more stable oscillation frequency; meanwhile, the vibration can be started quickly, and the requirement of the system on the starting speed of the oscillator is met.
Drawings
FIG. 1 is a circuit diagram of a ring voltage controlled oscillator disclosed in the prior art of the present invention;
fig. 2 shows a circuit diagram of a ring voltage controlled oscillator disclosed in an embodiment of the invention.
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention. It should be noted that the following embodiments and features in the embodiments may be combined with each other without conflict.
It should be noted that the illustrations provided in the following embodiments merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complicated.
As shown in fig. 2, the invention provides a ring voltage controlled oscillator, which comprises a bias generating unit, a starting detection unit and a ring oscillator unit which are sequentially connected, wherein the bias generating unit comprises a current source Iptat, a current source Iref, MOS transistors MP0, MP1, MN0 and a resistor R, the starting detection unit comprises MOS transistors MP2, MN1 and complementary switches Φ1 and Φ2, and the ring oscillator unit comprises MOS transistors MP3, MP4, MP5, MP6, MP7, MP8, MP9, MP10, MN2, MN3, MN4, MN5, MN6, MN7, MN8, MN9, MN10 and inverters INV0, INV1, INV2;
the current sources Iptat and Iref of the bias generating unit flow down to GND, the gate and drain of the MOS transistor MP0 are connected to the power sources Iptat and Iref, the source of the MOS transistor MP0 is connected to the power source VDD, the gate is connected to the gate of MP1, the source electrode of the MOS tube MP1 is connected with the power supply VDD, the drain electrode is downwards connected with the upper end of the resistor R, meanwhile, the frequency control voltage Vtune is led out, the lower end of the resistor R is connected with the drain electrode and the grid electrode of the MOS tube MN0, and the source electrode of the MOS tube MN0 is connected with the GND;
the grid electrode of the MOS tube MP2 of the oscillation starting detection unit is connected with the grid electrode of MP0, the source electrode is connected with the power supply VDD, the drain electrode is connected with the upper end of the switch phi 1, the oscillation starting indication voltage Vstart is led out, the lower end of the switch phi 1 is connected with the grid electrode of the MOS tube MN1 and is connected with the upper end of the switch phi 2, and the lower end of the switch phi 2 is connected with the source electrode, the drain electrode and the GND of the MOS tube MN 1;
the grid electrode of the MOS tube MN2 of the ring oscillator unit is connected with the frequency control voltage Vtune, the source electrode is connected with the GND, and the drain electrode is connected with the drain electrode of the MN3 and the grid electrode and the drain electrode of the MP 3; the grid electrode of the MOS tube MN3 is connected with the starting indication voltage Vstart, and the source electrode is connected with GND; the drain electrode of the MOS tube MP3 is connected with the grid electrode, and the source electrode is connected with the power supply VDD; the grid electrode of the MOS tube MP4 is connected with the grid electrode of MP3, the source electrode is connected with the power supply VDD, and the drain electrode is connected with the grid electrode and the drain electrode of MN 4; the source electrode of the MOS tube MN4 is connected with GND; the grid electrode of the MOS tube MP5 is connected with the grid electrodes of MP3 and MP4, the source electrode is connected with the power supply VDD, and the drain electrode is connected with the source electrode of the MOS tube MP 8; the grid electrode of the MOS tube MP8 is connected with the grid electrode of the MN8, the drains of the MP10 and the MN10 and the input end of the inverter INV0, the drain electrode of the MOS tube MP8 is connected with the drain electrode of the MN8, and the grid electrodes of the MP9 and the MP 10; the source electrode of the MOS tube MN8 is connected with the drain electrode of the MN 5; the grid electrode of the MOS tube MN5 is connected with the grid electrode of the MN4, and the source electrode is connected with GND; the grid electrode of the MOS tube MP6 is connected with the grid electrodes of MP3, MP4 and MP5, the source electrode is connected with the power supply VDD, and the drain electrode is connected with the source electrode of MP 9; the drain electrode of the MOS tube MP9 is connected with the drain electrode of the MN10 and the grid electrodes of the MP10 and the MN 10; the source electrode of the MOS tube MN9 is connected with the drain electrode of the MN 6; the grid electrode of the MOS tube MN6 is connected with the grid electrodes of the MN4 and the MN5, and the source electrode is connected with the GND; the grid electrode of the MOS tube MP7 is connected with the grid electrodes of MP3, MP4 and MP5, the source electrode is connected with the power supply VDD, and the drain electrode is connected with MP 10; the source electrode of the MOS tube MN10 is connected with the drain electrode of the MN 7; the source electrode of the MOS tube MN7 is connected with GND; the output of the inverter INV0 is connected with the input of INV1 and controls the switch Φ1; the output of the inverter INV1 is connected with the input of INV2 and controls the switch Φ2; the output of the inverter INV2 is the output of the oscillator.
Further, the current source Iptat is positively correlated with temperature, the current source Iref is independent of temperature, and the current sources Iptat and Iref are generated by a bandgap reference circuit.
Further, the MOS transistors MP0, MP1, MP2, MP3, MP4, MP5, MP6, MP7, MP8, MP9, MP10 are P-channel MOS transistors, and the MOS transistors MN0, MN1, MN2, MN3, MN4, MN5, MN6, MN7, MN8, MN9, MN10 are N-channel MOS transistors.
Compared with the traditional current-starved type ring oscillator, the ring oscillator has the advantages of low temperature drift, low process deviation sensitivity and quick oscillation starting.
(1) As the mobility of the MOS tube decreases with the increase of the temperature, the mobility of the MOS tube increases with the increase of the temperature. If the frequency control voltage Vtune remains unchanged, the current of the MOS transistor MN2 decreases with the temperature, and the currents of the MOS transistors MP5 to MP7 supplying power to the ring oscillator decrease with the temperature. In the invention, a current source Iptat which is positively correlated with temperature and a current source Iref which is irrelevant with temperature are used, a current which is positively correlated with temperature is generated according to a proper proportion, flows through MP0 and MP1 copies, flows through resistors R and MN0, and generates a frequency control voltage Vtune which is positively correlated with temperature, so that the change of the mobility of the MOS tube can be compensated, the current flowing through the MOS tube MN2 is ensured to be not greatly changed along with the temperature, and the temperature drift of the output frequency of the ring oscillator is further reduced.
(2) Since the current source Iref is obtained by dividing the bandgap reference voltage by the resistor, the current source Iptat is obtained by dividing VTlnn by the resistor, where VT is the thermal voltage 26mv and n is the area ratio of the two transistors in the bandgap reference circuit; process variations in the resistor itself can cause a shift in current source Iref and current source Iptat. In the invention, the Iref and the Ittat current sources are enabled to flow through the resistor R again through the copies of the MOS transistors MP0 and MP1, and the process deviation of the resistor can be just offset, because the process deviation directions of the resistors on the same chip are the same. The threshold voltage Vth of the MOS transistor MN2 may also be offset by the process, and the present invention introduces the connected MN0 in order to offset the process offset of MN 2. The MN0 and the MN2 are the same in size and are placed at adjacent positions so as to ensure that the Vth process deviation conditions are consistent. With this configuration, the present invention reduces the effects of the above-mentioned several major process deviations on the frequency of the oscillator, thereby reducing the variation of the output frequency of the ring oscillator with the process.
(3) Since the current starved mode oscillator of the conventional structure is limited in current, the starting speed is limited, and it is difficult to meet the system with the requirement of the starting speed. The oscillation starting detection unit introduced by the invention can detect whether the oscillator starts oscillation rapidly, if the oscillator does not start oscillation rapidly, the oscillation starting indication voltage Vstart is maintained at a high level, the MOS tube MN3 is opened, the grid voltage of the MP3 tube is pulled down instantaneously, the power supply current of the oscillator is increased, and the oscillation starting speed of the oscillator is improved; if the oscillator circuit has started normally, the start-up indication voltage Vstart is at a low level due to the action of the switches Φ1 and Φ2 and MN1, the MOS transistor MN3 is turned off, and the oscillation frequency of the oscillator is determined by the start-up indication voltage VstartVtune, so that the stability of the frequency of the oscillator during normal operation is ensured. The starting speed of the oscillator is accelerated, and the stability of the frequency in normal operation is ensured.
In summary, the invention can reduce the frequency offset generated by the change of the oscillation frequency along with the environmental temperature and the process change, and obtain more stable oscillation frequency; meanwhile, the vibration can be started quickly, and the requirement of the system on the starting speed of the oscillator is met. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
Claims (3)
1. A ring voltage controlled oscillator, characterized by:
the oscillator comprises a bias generation unit, a starting detection unit and a ring oscillator unit which are sequentially connected, wherein the bias generation unit comprises a current source Iptat, a current source Iref, MOS tubes MP0, MP1 and MN0 and a resistor R, the starting detection unit comprises MOS tubes MP2 and MN1 and complementary switches phi 1 and phi 2, and the ring oscillator unit comprises MOS tubes MP3, MP4, MP5, MP6, MP7, MP8, MP9, MP10, MN2, MN3, MN4, MN5, MN6, MN7, MN8, MN9 and MN10 and inverters INV0, INV1 and INV2;
the current sources Iptat and Iref of the bias generating unit flow down to GND, the gate and drain of the MOS transistor MP0 are connected to the power sources Iptat and Iref, the source of the MOS transistor MP0 is connected to the power source VDD, the gate is connected to the gate of MP1, the source electrode of the MOS tube MP1 is connected with the power supply VDD, the drain electrode is downwards connected with the upper end of the resistor R, meanwhile, the frequency control voltage Vtune is led out, the lower end of the resistor R is connected with the drain electrode and the grid electrode of the MOS tube MN0, and the source electrode of the MOS tube MN0 is connected with the GND;
the grid electrode of the MOS tube MP2 of the oscillation starting detection unit is connected with the grid electrode of MP0, the source electrode is connected with the power supply VDD, the drain electrode is connected with the upper end of the switch phi 1, the oscillation starting indication voltage Vstart is led out, the lower end of the switch phi 1 is connected with the grid electrode of the MOS tube MN1 and is connected with the upper end of the switch phi 2, and the lower end of the switch phi 2 is connected with the source electrode, the drain electrode and the GND of the MOS tube MN 1;
the grid electrode of the MOS tube MN2 of the ring oscillator unit is connected with the frequency control voltage Vtune, the source electrode is connected with the GND, and the drain electrode is connected with the drain electrode of the MN3 and the grid electrode and the drain electrode of the MP 3; the grid electrode of the MOS tube MN3 is connected with the starting indication voltage Vstart, and the source electrode is connected with GND; the drain electrode of the MOS tube MP3 is connected with the grid electrode, and the source electrode is connected with the power supply VDD; the grid electrode of the MOS tube MP4 is connected with the grid electrode of MP3, the source electrode is connected with the power supply VDD, and the drain electrode is connected with the grid electrode and the drain electrode of MN 4; the source electrode of the MOS tube MN4 is connected with GND; the grid electrode of the MOS tube MP5 is connected with the grid electrodes of MP3 and MP4, the source electrode is connected with the power supply VDD, and the drain electrode is connected with the source electrode of the MOS tube MP 8; the grid electrode of the MOS tube MP8 is connected with the grid electrode of the MN8, the drains of the MP10 and the MN10 and the input end of the inverter INV0, the drain electrode of the MOS tube MP8 is connected with the drain electrode of the MN8, and the grid electrodes of the MP9 and the MP 10; the source electrode of the MOS tube MN8 is connected with the drain electrode of the MN 5; the grid electrode of the MOS tube MN5 is connected with the grid electrode of the MN4, and the source electrode is connected with GND; the grid electrode of the MOS tube MP6 is connected with the grid electrodes of MP3, MP4 and MP5, the source electrode is connected with the power supply VDD, and the drain electrode is connected with the source electrode of MP 9; the drain electrode of the MOS tube MP9 is connected with the drain electrode of the MN10 and the grid electrodes of the MP10 and the MN 10; the source electrode of the MOS tube MN9 is connected with the drain electrode of the MN 6; the grid electrode of the MOS tube MN6 is connected with the grid electrodes of the MN4 and the MN5, and the source electrode is connected with the GND; the grid electrode of the MOS tube MP7 is connected with the grid electrodes of MP3, MP4 and MP5, the source electrode is connected with the power supply VDD, and the drain electrode is connected with MP 10; the source electrode of the MOS tube MN10 is connected with the drain electrode of the MN 7; the source electrode of the MOS tube MN7 is connected with GND; the output of the inverter INV0 is connected with the input of INV1 and controls the switch Φ1; the output of the inverter INV1 is connected with the input of INV2 and controls the switch Φ2; the output of the inverter INV2 is the output of the oscillator.
2. The ring voltage controlled oscillator of claim 1, wherein: the current source Iptat is positively correlated with temperature, the current source Iref is independent of temperature, and the current sources Iptat and Iref are generated by a band gap reference circuit.
3. The ring voltage controlled oscillator of claim 1, wherein: the MOS tubes MP0, MP1, MP2, MP3, MP4, MP5, MP6, MP7, MP8, MP9, MP10 are P-channel MOS tubes, and the MOS tubes MN0, MN1, MN2, MN3, MN4, MN5, MN6, MN7, MN8, MN9, MN10 are N-channel MOS tubes.
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