CN110011644A - A kind of ring oscillator - Google Patents
A kind of ring oscillator Download PDFInfo
- Publication number
- CN110011644A CN110011644A CN201910311355.5A CN201910311355A CN110011644A CN 110011644 A CN110011644 A CN 110011644A CN 201910311355 A CN201910311355 A CN 201910311355A CN 110011644 A CN110011644 A CN 110011644A
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- CN
- China
- Prior art keywords
- electric current
- voltage
- frequency
- circuit
- nmos tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/027—Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
- H03K3/03—Astable circuits
- H03K3/0315—Ring oscillators
- H03K3/0322—Ring oscillators with differential cells
Abstract
A kind of ring oscillator, including bias current generating circuit, PTAT voltage generation circuit, frequency-current conversion circuit, electric current compare feed circuit and annular voltage controlled oscillator；The bias current generating circuit is for generating positive temperature coefficient electric current and being output to frequency-current conversion circuit, and the PTAT voltage generation circuit is for generating positive temperature coefficient voltage and being output to frequency-current conversion circuit.Using ring oscillator of the present invention, can be significantly reduced frequency of oscillation vary with temperature and caused by frequency drift, and do not change with mains voltage variations.
Description
Technical field
The invention belongs to electronic circuit fields, are related to oscillator technique, and in particular to a kind of ring oscillator.
Background technique
Oscillator is the important component of electronic system, provides accurate clock signal for chip.Ring oscillator is
A kind of circuit changing the signal of output by the fixed cycle by self-excitation mode, with occupying, chip area is small, structure is simple
The characteristics of.The frequency of oscillation of existing ring oscillator is influenced by supply voltage or environment temperature, can generate biggish frequency
Variation, so that ring oscillator is unable to satisfy requirement of the High Definition Systems to clock frequency.
Summary of the invention
The present invention provides a kind of ring oscillator, to solve the problems, such as that existing ring oscillator frequency variation range is big.
Ring oscillator of the present invention, including bias current generating circuit, PTAT voltage generation circuit, frequency current turn
Change circuit, electric current compares feed circuit and annular voltage controlled oscillator；
The bias current generating circuit is for generating positive temperature coefficient electric current and being output to frequency-current conversion circuit, the PTAT
Voltage generation circuit is for generating positive temperature coefficient voltage and being output to frequency-current conversion circuit；
The frequency-current conversion circuit includes the adjustment pipe that operational amplifier and control terminal are connect with operational amplifier output terminal,
The adjustment pipe input terminal and output end are separately connected the bias current generating circuit and the operational amplifier reverse side, institute
PTAT voltage generation circuit output end is stated to connect with operational amplifier positive terminal,
The frequency-current conversion circuit further includes the charging valve being connected between the adjustment pipe output end and ground and switch electricity
Hold, the switching capacity is parallel with discharge tube, a phase inverter is connected between the charging valve and the control terminal of discharge tube, described
The input terminal of phase inverter is connect with the output end of the annular voltage controlled oscillator；
The electric current compares feed circuit for the equivalent current on the positive temperature coefficient electric current and the switching capacity simultaneously
Frequency control terminal of the output comparison voltage signal to the voltage controlled oscillator.
Specifically, the bias current generating circuit includes being connected between power supply and ground, and respectively with diode
What the first NMOS tube of connection and grid source were shorted exhausts pipe.
Further, it includes the second NMOS tube and first being connected between power supply and ground that the electric current, which compares feed circuit,
PMOS tube, the second NMOS tube grid are connect with the first NMOS tube grid；
The electric current efferent duct is connected with diode and is connect with the first PMOS tube grid, the electric current efferent duct
Output end is connect with the adjustment pipe input terminal.
Further, there is the voltage controlled oscillator frequency to adjust voltage input end, and the frequency adjusts voltage input end
It is connected to the common end of second NMOS tube and the first PMOS tube.
Further, compensating electric capacity is connected between second NMOS tube and the common end and power supply of the first PMOS tube.
Specifically, the voltage controlled oscillator includes bias voltage circuit and concatenated N number of complementary metal-oxide-semiconductor pair；The N is big
In 1 odd number；
The bias voltage circuit includes the P offset and N offset being connected between power supply and ground, and the N offset is two
The connection of pole pipe form, control voltage input end of the grid of the P offset as the voltage controlled oscillator；
Each complementation metal-oxide-semiconductor is followed successively by electric current adjustment to including the multiple devices being connected between power supply and ground from power supply to ground
PMOS tube, reversed PMOS tube, reversed NMOS tube and electric current adjust NMOS tube, reversed PMOS tube and reversed NMOS tube grid phase continuous cropping
For the input terminal of the complementation metal-oxide-semiconductor pair, reversed PMOS tube and reversed NMOS tube drain the output being connected as the complementation metal-oxide-semiconductor pair
The grid of end, the electric current adjustment PMOS tube and electric current adjustment NMOS tube is separately connected the grid of the P offset and N offset
Pole；
Input terminal of the complementation metal-oxide-semiconductor to the output end connection first order of afterbody.
Using ring oscillator of the present invention, can be significantly reduced frequency of oscillation vary with temperature and caused by frequency
Drift, and do not change with mains voltage variations.
Detailed description of the invention
Fig. 1 is a kind of specific embodiment schematic diagram of ring oscillator of the present invention；
Fig. 2 is a kind of specific embodiment schematic diagram of voltage controlled oscillator of the present invention；
Appended drawing reference title in figure are as follows: C1- switching capacity, C2- compensating electric capacity, INV- phase inverter, OP- operational amplifier, PTAT-
PTAT voltage generation circuit, CLK- clock signal, D1- exhaust pipe, the first NMOS tube of N1-, the second NMOS tube of N2-, N3- adjustment
Pipe, N4- charging valve, N5- discharge tube, N6- electric current adjust NMOS tube, and N7- electric current adjusts NMOS tube, the reversed NMOS tube of N8-, P1-
First PMOS tube, the second PMOS tube of P2-, P6- electric current adjustment PMOS tube, P7-electric current adjustment PMOS tube, the reversed PMOS tube of P8-,
Vctrl- controls voltage.
Specific embodiment
With reference to the accompanying drawing, specific embodiments of the present invention will be described in further detail.
Ring oscillator of the present invention, including bias current generating circuit, PTAT voltage generation circuit, frequency current turn
Change circuit and annular voltage controlled oscillator；
The bias current generating circuit is for generating positive temperature coefficient electric current and being output to frequency-current conversion circuit, the PTAT
Voltage generation circuit is for generating positive temperature coefficient voltage and being input to frequency-current conversion circuit；
The frequency-current conversion circuit includes the adjustment pipe that operational amplifier and control terminal are connect with operational amplifier output terminal,
The adjustment pipe input terminal and output end are separately connected the bias current generating circuit and the operational amplifier reverse side, institute
PTAT voltage generation circuit output end is stated to connect with operational amplifier positive terminal,
The frequency-current conversion circuit further includes the charging valve being connected between the adjustment pipe output end and ground and switch electricity
Hold, the switching capacity is parallel with discharge tube, a phase inverter is connected between the charging valve and the control terminal of discharge tube, described
The input terminal of phase inverter is connect with the output end of the annular voltage controlled oscillator.
So-called positive temperature coefficient, refer to it is identical as the variation tendency of temperature, positive temperature coefficient electric current i.e. be rising with temperature rise
Electric current, in specific embodiment as shown in Figure 1, provide the bias current generating circuit for generating positive temperature coefficient electric current
A kind of specific embodiment utilizes the bias current for exhausting pipe generation positive temperature coefficient.
Bias current generating circuit includes first for being connected between power supply and ground, and being connected respectively with diode
What NMOS tube and grid source were shorted exhausts pipe.
It includes the second NMOS tube and the first PMOS tube being connected between power supply and ground that the electric current, which compares feed circuit, and
Electric current efferent duct, the second NMOS tube grid are connect with the first NMOS tube grid；
The electric current efferent duct is connected with diode and is connect with the first PMOS tube grid, the electric current efferent duct
Output end is connect with the adjustment pipe input terminal
The drain electrode for exhausting pipe D1 connects power supply, the grid of D1 and source electrode are shorted and is connected to grid and the drain electrode of N1, and the source electrode of N1 is connected to
Ground, the electric current that circuit generates is to flow through the electric current for exhausting pipe D1, i.e.,
(formula 1)
Wherein, u indicates carrier mobility, and Cox indicates that gate oxide capacitance, W/L indicate to exhaust the breadth length ratio of pipe D1,
Expression exhausts the threshold voltage of pipe D1.
As it can be seen that the electric current is by being input to the electric current by the second NMOS tube N2 from specific embodiment shown in FIG. 1
Compare feed circuit.
It includes the second NMOS tube and the first PMOS tube being connected between power supply and ground that electric current, which compares feed circuit, and described
Two NMOS tube grids are connect with the first NMOS tube grid；
The electric current efferent duct is connected with diode and is connect with the first PMOS tube grid, the electric current efferent duct
Output end is connect with the adjustment pipe input terminal.
Electric current compares feed circuit and inputs positive temperature coefficient electric current by the second NMOS tube N2, is inputted by the first PMOS tube P1
The equivalent current of charging capacitor, the voltage for the difference reflection that the two is compared is as the control voltage of voltage controlled oscillator
Vctrl, to realize frequency feedback, guarantees voltage controlled oscillation so that the control voltage Vctrl of oscillator obtains the feedback of frequency
The frequency stabilization of device.
Frequency-current conversion circuit is for being converted into the output clock frequency that the annular voltage controlled oscillator generates accordingly
Current value；
Frequency-current conversion circuit is based on switching capacity C1 is equivalent to resistance, and loading the reference voltage on C1
It is converted into the principle of electric current, to realize the conversion of frequency to electric current.
Specifically:
The positive temperature coefficient voltage Vptat that PTAT voltage generation circuit generates is input to the positive terminal of operational amplifier OP, and operation is put
Big device OP and adjustment pipe N3 connect and form feedback control loop, constitute unity voltage gain buffer, make the source electrode for adjusting pipe N3
Voltage and operational amplifier OP positive terminal voltage are equal；
The output clock signal clk of the annular voltage controlled oscillator is connected to the grid of discharge tube N5, and anti-by phase inverter INV
It is connected back to the grid of charging valve N4, therefore, discharge tube N5 is connected, puts when charging valve N4 conducting when charging valve N4 cut-off
Fulgurite N5 cut-off, so the voltage of switching capacity C1 anode is between positive temperature coefficient voltage Vptat and ground voltage by charge and discharge repeatedly
Electricity, forms Switch capacitor structure, and corresponding resistance value is, whereinIndicate the frequency of clock signal
Rate.Therefore, in frequency-current conversion circuit, the equivalent current Ie of generation is
(formula 2)
The positive temperature coefficient electric current that the electric current and the bias current generating circuit generate is when current mirror is the duplication ratio of 1:1
It is equal,
Joint type 1 and formula 2, can obtain
(formula 3)
It can see by formula 3, the output clock frequency of annular voltage controlled oscillatorIt is unrelated with supply voltage value, thus not by
The influence of supply voltage；In terms of temperature change, parameters in formula 4: u, Cox W/L, C1 are definite values, onlyWith
Vptat is varied with temperature, and exhausts the threshold voltage of pipe D1It is positive temperature coefficient value, as long as therefore positive temperature coefficient
Reference voltage Vptat be set toValue with identical temperature coefficient, clock frequencyBeing influenced by temperature can pole
It is small.
Generate positive temperature coefficient voltage is the prior art in the art, such as Chinese patent CN106873704B is disclosed
A kind of reference voltage source of positive temperature coefficient, the present invention in repeat no more.
It is to be appreciated that above-mentioned conclusion stands good even if current mirror duplication ratio is not 1.
A compensating electric capacity C2 can be connected between second NMOS tube and the common end and power supply of the first PMOS tube,
Filter out the high-frequency fluctuation on the control voltage Vctrl signal wire of voltage controlled oscillator.
A specific embodiment of the voltage controlled oscillator is provided as shown in Figure 2, and the voltage controlled oscillator includes biasing
Potential circuit and concatenated N number of complementary metal-oxide-semiconductor pair；The N is the odd number greater than 1；N=3 in Fig. 2.
The bias voltage circuit includes the P offset and N offset being connected between power supply and ground, the N offset
For diode connection, control voltage input end of the grid of the P offset as the voltage controlled oscillator；
Each complementation metal-oxide-semiconductor is followed successively by electric current adjustment to including the multiple devices being connected between power supply and ground from power supply to ground
PMOS tube P7, reversed PMOS tube P8, reversed NMOS tube N8 and electric current adjust NMOS tube N7, reversed PMOS tube and reversed NMOS tube grid
The input terminal being extremely connected as the complementation metal-oxide-semiconductor pair, reversed PMOS tube are connected with the drain electrode of reversed NMOS tube as the complementation metal-oxide-semiconductor
Pair output end, the grid of electric current adjustment PMOS tube P6 and electric current adjustment NMOS tube N6 is separately connected the P offset and N
The grid of offset；
Input terminal of the complementation metal-oxide-semiconductor to the output end connection first order of afterbody.
The voltage value of control voltage Vctrl controls the clock frequency of clock signal clk output: as control voltage Vctrl
When voltage increases, the operating current of phase inverter reduces, clock frequencyBecome smaller therewith；When control voltage Vctrl voltage reduces
When, the operating current of phase inverter increases, clock frequencyBecome larger therewith；When controlling voltage Vctrl voltage stabilization, reverse phase
The operating current of device keeps definite value, clock frequencyNamely stable value.
Previously described is each preferred embodiment of the invention, if the preferred embodiment in each preferred embodiment
It is not obvious contradictory or premised on a certain preferred embodiment, each preferred embodiment can any stack combinations
Use, the design parameter in the embodiment and embodiment only for the purpose of clearly stating the inventor's invention verification process, and
It is non-to limit scope of patent protection of the invention, scope of patent protection of the invention is still subject to the claims, all
It is that similarly should be included in protection model of the invention with the variation of equivalent structure made by specification and accompanying drawing content of the invention
In enclosing.
Claims (6)
1. a kind of ring oscillator, which is characterized in that including bias current generating circuit, PTAT voltage generation circuit, frequency electricity
Stream conversion circuit, electric current compare feed circuit and annular voltage controlled oscillator；
The bias current generating circuit is for generating positive temperature coefficient electric current and being output to frequency-current conversion circuit, the PTAT
Voltage generation circuit is for generating positive temperature coefficient voltage and being output to frequency-current conversion circuit；
The frequency-current conversion circuit includes the adjustment pipe that operational amplifier and control terminal are connect with operational amplifier output terminal,
The adjustment pipe input terminal and output end are separately connected the bias current generating circuit and the operational amplifier reverse side, institute
PTAT voltage generation circuit output end is stated to connect with operational amplifier positive terminal,
The frequency-current conversion circuit further includes the charging valve being connected between the adjustment pipe output end and ground and switch electricity
Hold, the switching capacity is parallel with discharge tube, a phase inverter is connected between the charging valve and the control terminal of discharge tube, described
The input terminal of phase inverter is connect with the output end of the annular voltage controlled oscillator；
The electric current compares feed circuit for the equivalent current on the positive temperature coefficient electric current and the switching capacity simultaneously
Frequency control terminal of the output comparison voltage signal to the voltage controlled oscillator.
2. ring oscillator as described in claim 1, which is characterized in that the bias current generating circuit includes being connected on electricity
Between source and ground, and pipe is exhausted with what the first NMOS tube and grid source of diode connection were shorted respectively.
3. ring oscillator as claimed in claim 2, which is characterized in that it includes being connected on electricity that the electric current, which compares feed circuit,
The second NMOS tube and the first PMOS tube and electric current efferent duct between source and ground, the second NMOS tube grid and the first NMOS
Tube grid connection；
The electric current efferent duct is connected with diode and is connect with the first PMOS tube grid, the electric current efferent duct
Output end is connect with the adjustment pipe input terminal.
4. ring oscillator as claimed in claim 3, which is characterized in that it is defeated that there is the voltage controlled oscillator frequency to adjust voltage
Enter end, the frequency adjusts the common end that voltage input end is connected to second NMOS tube and the first PMOS tube.
5. ring oscillator as claimed in claim 3, which is characterized in that second NMOS tube and the first PMOS tube it is public
Compensating electric capacity is connected between end and power supply.
6. ring oscillator as described in claim 1, which is characterized in that the voltage controlled oscillator include bias voltage circuit and
Concatenated N number of complementary metal-oxide-semiconductor pair；The N is the odd number greater than 1；
The bias voltage circuit includes the P offset and N offset being connected between power supply and ground, and the N offset is two
The connection of pole pipe form, control voltage input end of the grid of the P offset as the voltage controlled oscillator；
Each complementation metal-oxide-semiconductor is followed successively by electric current adjustment to including the multiple devices being connected between power supply and ground from power supply to ground
PMOS tube, reversed PMOS tube, reversed NMOS tube and electric current adjust NMOS tube, reversed PMOS tube and reversed NMOS tube grid phase continuous cropping
For the input terminal of the complementation metal-oxide-semiconductor pair, reversed PMOS tube and reversed NMOS tube drain the output being connected as the complementation metal-oxide-semiconductor pair
The grid of end, the electric current adjustment PMOS tube and electric current adjustment NMOS tube is separately connected the grid of the P offset and N offset
Pole；
Input terminal of the complementation metal-oxide-semiconductor to the output end connection first order of afterbody.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910311355.5A CN110011644B (en) | 2019-04-18 | 2019-04-18 | Ring oscillator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910311355.5A CN110011644B (en) | 2019-04-18 | 2019-04-18 | Ring oscillator |
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| Publication Number | Publication Date |
|---|---|
| CN110011644A true CN110011644A (en) | 2019-07-12 |
| CN110011644B CN110011644B (en) | 2023-03-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910311355.5A Active CN110011644B (en) | 2019-04-18 | 2019-04-18 | Ring oscillator |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113746455A (en) * | 2021-09-14 | 2021-12-03 | 北京欧铼德微电子技术有限公司 | Ring oscillator |
| CN115021726A (en) * | 2022-05-10 | 2022-09-06 | 上海韬润半导体有限公司 | Clock buffer circuit and analog-to-digital converter |
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|---|---|---|---|---|
| US5180995A (en) * | 1991-09-13 | 1993-01-19 | Mitsubishi Denki Kabushiki Kaisha | Temperature-compensated ring oscillator circuit formed on a semiconductor substrate |
| CN1848667A (en) * | 2005-04-04 | 2006-10-18 | 凌阳科技股份有限公司 | Ring oscillator for compensating voltage source offset |
| CN103078635A (en) * | 2012-12-28 | 2013-05-01 | 杭州士兰微电子股份有限公司 | Embedded oscillation circuit |
| CN202998064U (en) * | 2012-12-28 | 2013-06-12 | 杭州士兰微电子股份有限公司 | An internally-disposed oscillation circuit |
| CN103312266A (en) * | 2013-05-06 | 2013-09-18 | 北京航空航天大学 | Design of circuit of annular oscillator insensitive to temperature |
| CN103618545A (en) * | 2013-11-26 | 2014-03-05 | 苏州贝克微电子有限公司 | High-frequency CMOS voltage-controlled oscillator |
| CN105099445A (en) * | 2014-05-12 | 2015-11-25 | 国家电网公司 | Frequency control method and circuit for ring oscillator |
-
2019
- 2019-04-18 CN CN201910311355.5A patent/CN110011644B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5180995A (en) * | 1991-09-13 | 1993-01-19 | Mitsubishi Denki Kabushiki Kaisha | Temperature-compensated ring oscillator circuit formed on a semiconductor substrate |
| CN1848667A (en) * | 2005-04-04 | 2006-10-18 | 凌阳科技股份有限公司 | Ring oscillator for compensating voltage source offset |
| CN103078635A (en) * | 2012-12-28 | 2013-05-01 | 杭州士兰微电子股份有限公司 | Embedded oscillation circuit |
| CN202998064U (en) * | 2012-12-28 | 2013-06-12 | 杭州士兰微电子股份有限公司 | An internally-disposed oscillation circuit |
| CN103312266A (en) * | 2013-05-06 | 2013-09-18 | 北京航空航天大学 | Design of circuit of annular oscillator insensitive to temperature |
| CN103618545A (en) * | 2013-11-26 | 2014-03-05 | 苏州贝克微电子有限公司 | High-frequency CMOS voltage-controlled oscillator |
| CN105099445A (en) * | 2014-05-12 | 2015-11-25 | 国家电网公司 | Frequency control method and circuit for ring oscillator |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113746455A (en) * | 2021-09-14 | 2021-12-03 | 北京欧铼德微电子技术有限公司 | Ring oscillator |
| CN113746455B (en) * | 2021-09-14 | 2024-03-12 | 北京欧铼德微电子技术有限公司 | Ring oscillator |
| CN115021726A (en) * | 2022-05-10 | 2022-09-06 | 上海韬润半导体有限公司 | Clock buffer circuit and analog-to-digital converter |
| CN115021726B (en) * | 2022-05-10 | 2023-02-17 | 上海韬润半导体有限公司 | Clock buffer circuit and analog-to-digital converter |
| WO2023216171A1 (en) * | 2022-05-10 | 2023-11-16 | 上海韬润半导体有限公司 | Clock buffer circuit and analog-to-digital converter |
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| Publication number | Publication date |
|---|---|
| CN110011644B (en) | 2023-03-14 |
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