CN105071803A - Temperature and process compensation ring oscillator - Google Patents
Temperature and process compensation ring oscillator Download PDFInfo
- Publication number
- CN105071803A CN105071803A CN201510520955.4A CN201510520955A CN105071803A CN 105071803 A CN105071803 A CN 105071803A CN 201510520955 A CN201510520955 A CN 201510520955A CN 105071803 A CN105071803 A CN 105071803A
- Authority
- CN
- China
- Prior art keywords
- voltage
- ring oscillator
- controlled
- temperature
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
Abstract
The invention discloses a temperature and process compensation ring oscillator. The temperature and process compensation ring oscillator comprises a ring oscillator and a compensation type bias circuit, wherein the ring oscillator comprises a plurality of a voltage-controlled delay unit and a gate controlled switch; the voltage-controlled delay unit constructs an annular delay line structure; the gate controlled switch is used for controlling the oscillation starting and oscillation stopping of the ring oscillator; the delay time of the voltage-controlled delay unit shows a positive temperature characteristic under the influences of process change and temperature drift, and is positively correlated with the voltage-controlled voltage; the compensation type bias circuit comprises a bias main body circuit and a compensation circuit, and is used for generating the voltage-controlled voltage which has a negative temperature characteristic and is correlated with the process change; and change in the delay time of the voltage-controlled delay unit caused by the process and temperature is compensated through the voltage-controlled voltage of the compensation type bias circuit. Compared with a conventional ring oscillator, the temperature and process compensation ring oscillator is simple in circuit structure and low in power consumption, is hardly influenced by the process change and temperature shift, and can meet the requirements on stable clock frequency in a temperature sensor and an infrared ranging 3D imaging readout circuit.
Description
Technical field
The present invention relates to a kind of oscillator, particularly relate to a kind of temperature and technological compensa tion type ring oscillator.
Background technology
Oscillator produces source as clock generator and frequency, and become a part indispensable in most of Circuits System, it is widely used in the fields such as communication, electronics, navigation, aviation, medical science, biology.Oscillator can export by self-excitation mode the signal changed by the fixed cycle, and it can be divided into according to frequency spectrum, the triangular wave oscillator of single-frequency and the harmonic oscillator of multiple spectra; According to whether accessible site can be divided into, integratable oscillator and the outer not integratable oscillator of sheet in sheet.In sheet, integratable oscillator can be divided into according to topological structure, sluggish type oscillator, ring oscillator and inductance capacitance (LC) oscillator three class; And the outer not integratable oscillator of sheet mainly refers to quartz oscillator, it has frequency stabilization, volume is little, anti-noise ability is strong, low-cost advantage, has been widely applied in household electrical appliance and communication equipment.
At present, integratable oscillator is widely used in SOC (system on a chip), and wherein, sluggish type oscillator is lower because of output frequency, is mainly used in the generation realizing low-frequency clock; The output frequency of LC oscillator is higher, have good anti-phase noise ability, be mainly used in radio circuit, but larger inductance area adds integrated difficulty.And ring oscillator is because of its structure is simple, output frequency is high and adjustable extent is large, integrated level is high etc. exclusive advantage, can be widely used in TDC circuit, clock recovery circuitry and frequency synthesizer.In the practical implementation of reality, pierce circuit is mainly used in providing clock signal on required sheet, therefore, the stability characteristic (quality) of clock signal also remote-effects the function of electronic system, such as, in large-scale SOC system, the shake of clock signal and deviation directly affect the performance of digital system.
Solving the basic ideas of ring vibration frequency stability and strategy is introduce the voltage-controlled ring alternative common ring that shakes to shake, voltage-controlled ring shakes and the wide region of clock frequency not only can be regulated to change, and by the stability contorting to voltage control signal, the stability of ring vibration frequency effectively can be improved, reduce phase noise.Ring shakes and voltage-controlledly has two class modes, and a class is the close-loop control mode being provided voltage control signal by DLL circuit, although control performance is superior, circuit structure is complicated; Another kind of is the open-loop compensation mode being provided voltage control signal by biasing circuit, although control performance is slightly poor compared to closed loop, but circuit structure is simple, area occupied is little, low in energy consumption, and shake compared to common ring, its frequency stability is better, be applicable to, in the very large integrated circuit (IC) system of variations in temperature, have broad application prospects in a chip design.
Summary of the invention
Goal of the invention: be subject to the problem of temperature drift and process variations influence to overcome ring vibration frequency in prior art, the invention provides a kind of temperature and technological compensa tion type ring oscillator, this circuit structure is simple, low in energy consumption, the frequency stabilization under wide temperature range can be realized, and very little by technogenic influence.
Technical scheme: for achieving the above object, the technical solution used in the present invention is:
A kind of temperature and technological compensa tion type ring oscillator, comprise ring oscillator and offset-type biasing circuit; Described ring oscillator comprises some voltage-controlled delay unit and an alternative gate controlled switch, all voltage-controlled delay unit looping delay-line structures, and alternative gate controlled switch is for controlling starting of oscillation and the failure of oscillation of ring oscillator; The described voltage-controlled delay cell delay time, by the impact of technique change and temperature drift, shows as positive temperature characterisitic, and with voltage-controlled voltage positive correlation; Described offset-type biasing circuit comprises biased main body circuit and compensating circuit, produces and has negative temperature characteristic and the voltage-controlled voltage relevant to technique change; The change of the time of delay caused due to technique change and temperature drift by voltage-controlled delay unit in the voltage-controlled voltage compensation ring oscillator of offset-type biasing circuit, the compensation method adopted is open loop compensation approach, compensate to realize good flow-route and temperature, ensure that the frequency of ring oscillator is basicly stable.
Preferably, compensating circuit in described offset-type biasing circuit comprises resistance automatic biasing cascade (cascode) current mirror, the PMOS of falling breadth length ratio and negative temperature coefficient resister, wherein the gate pmos of falling breadth length ratio end is connected with the NMOS tube drain terminal of cascode current mirror, negative temperature coefficient resister is connected between the NMOS tube drain terminal of cascode current mirror and the PMOS of falling breadth length ratio drain terminal, the PMOS of falling breadth length ratio source connects supply voltage, and the PMOS of falling breadth length ratio drain terminal meets voltage-controlled voltage Vctrl.
Preferably, the biased main body circuit in described offset-type biasing circuit adopts the basic Δ V of tape starting circuit
bE/ R type two-way bias structure, basic Δ V
bEcurrent mirror in/R type two-way bias structure adopts resistance automatic biasing cascodes to provide stable bias voltage for compensating circuit.
Preferably, voltage-controlled delay unit in described ring oscillator adopts the inverter of voltage-controlled metal-oxide-semiconductor control capacitance load, and ring oscillator employing has the ring delay line structure determining first phase, namely in ring oscillator, all voltage-controlled delay unit form the ring delay line structure determining first phase.
Preferably, the alternative gate controlled switch in described ring oscillator and first order voltage-controlled delay unit serve as the anti-phase time delay of one-level, and reverse time delay and each Non-inverting delay unit delay match, realize being uniformly distributed of phase node.
Beneficial effect: temperature provided by the invention and technological compensa tion type ring oscillator, compared with prior art, have following technique effect:
1, temperature of the present invention and technological compensa tion type ring oscillator, wherein offset-type biasing circuit is by regulating voltage-controlled voltage, the change that the time of delay compensating voltage-controlled delay unit in ring oscillator causes due to temperature and process drift, the method of this open-loop compensation, greatly reduce the sensitivity characteristic that ring shakes to temperature and technique, ensure the stable of ring vibration frequency;
2, temperature of the present invention and technological compensa tion type ring oscillator, the unlatching of being shaken by gate controlled switch control ring and shutoff, greatly can be reduced power consumption and determine the first phase of annular oscillation circuit; Ring shakes each delay cell by voltage-controlled regulating and controlling voltage, and each node phase is uniformly distributed, and can be applicable to high accuracy two-part time-to-digital conversion circuit (TDC);
3, temperature of the present invention and technological compensa tion type ring oscillator, structure is simple, compared to the structure adopting the closed loop compensation mode of delay phase-locked loop (DLL) to carry out control lag unit, has greatly saved area.
Accompanying drawing explanation
Fig. 1 is the structured flowchart of temperature and technological compensa tion type ring oscillator;
Fig. 2 is the circuit diagram of voltage-controlled delay unit;
Fig. 3 is the circuit diagram of offset-type biasing circuit;
Fig. 4 is the output frequency simulation waveform figure of temperature and technological compensa tion type ring oscillator.
Embodiment
Below in conjunction with accompanying drawing, the present invention is further described.
Be illustrated in figure 1 the structured flowchart of a kind of temperature and technological compensa tion type ring oscillator, comprise ring oscillator and offset-type biasing circuit; Described ring oscillator comprises some voltage-controlled delay unit and an alternative gate controlled switch, all voltage-controlled delay unit looping delay-line structures, and alternative gate controlled switch is for controlling starting of oscillation and the failure of oscillation of ring oscillator; The described voltage-controlled delay cell delay time, by the impact of technique change and temperature drift, shows as positive temperature characterisitic, and with voltage-controlled voltage positive correlation; Described offset-type biasing circuit comprises biased main body circuit and compensating circuit, produces and has negative temperature characteristic and the voltage-controlled voltage relevant to technique change; The change of the time of delay caused due to technique change and temperature drift by voltage-controlled delay unit in the voltage-controlled voltage compensation ring oscillator of offset-type biasing circuit, the compensation method adopted is open loop compensation approach, compensate to realize good flow-route and temperature, ensure that the frequency of ring oscillator is basicly stable.
In FIG, E
nfor the gate-control signal of ring oscillator, for controlling starting of oscillation and the failure of oscillation of ring oscillator; Work as E
nduring for high level, whole ring shakes and starts working.Voltage-controlled delay unit in ring oscillator is voltage-controlled type, by the voltage-controlled voltage V of offset-type biasing circuit
ctrlcontrol the time delay of voltage-controlled delay unit.Time delay due to voltage-controlled delay unit is subject to the impact of technique change and temperature drift, if temperature or technique change, time delay changes thereupon, and now offset-type biasing circuit can regulate voltage-controlled voltage V automatically
ctrlsize, and then compensate the change of voltage control delay unit time delay, the time delay of voltage control delay unit remained unchanged.Frequency due to ring oscillator depends primarily on quantity and the time delay of voltage-controlled delay unit, therefore can ensure the stable of whole ring oscillator operating frequency.
Figure 2 shows that the circuit diagram of voltage-controlled delay unit, this circuit is made up of 4 basic voltage-controlled delay modules.Basic voltage-controlled delay module adopts the inverter of voltage-controlled metal-oxide-semiconductor control capacitance load, by regulating the NMOS electric capacity of NMOS tube thyrite and series connection with it, reaches the object regulating time delay.Load thyrite and Capacitance parallel connection at the output of inverter INV, voltage-controlled voltage V
ctrlfor controlling the size of metal-oxide-semiconductor conducting resistance, one end dead earth of mos capacitance, voltage V on electric capacity
cexcursion by V
ctrlrestriction, is approximately V
c, max=V
ctrl-V
tN, wherein V
tNfor the threshold voltage of NMOS.Work as V
ctrlthan MOS cut-in voltage V
tNtime low, voltage-controlled R+C branch road disconnects inoperative all the time, and the intrinsic discharge and recharge that rising and fall delay are INV postpones, and is fixed delay.Work as V
ctrl>V
tNafter, the conducting of voltage-controlled R+C branch road is also worked, V
ctrlvoltage is larger, and on mos capacitance, the excursion of voltage is also larger, and equivalent mos capacitance is also larger, finally causes the time of delay of voltage-controlled delay unit with V
ctrlincrease and monotone increasing.
The time delay of voltage-controlled delay unit not only with V
ctrlrelevant, and be subject to the impact of temperature.Due to metal-oxide-semiconductor cut-in voltage V
tHfor negative temperature coefficient, carrier mobility μ is negative temperature coefficient, but INV is most of at linear resistance region in charge and discharge process, V
gS>>V
tN, the impact of cut-in voltage is relatively weak, so when carrier mobility plays a leading role, temperature raises, and the electric current of INV reduces, and time delay becomes large, and the time delay of voltage-controlled delay unit shows as positive temperature characterisitic.
Meanwhile, different technique is different to the delay of voltage-controlled delay unit, here for TSMC0.35mm technique.When process corner changes successively from ss → tt → ff, threshold voltage reduces successively.Now the electric current of INV increases, and the time delay of delay cell diminishes.
Fig. 3 is the offset-type biasing circuit that invention adopts, and for voltage-controlled delay unit provides voltage-controlled voltage, controls its time delay and then controls the frequency that whole ring shakes.This offset-type biasing circuit comprises biased main body circuit and compensating circuit, and biased main body circuit adopts the basic Δ V of tape starting circuit
bE/ R type two-way bias structure.The circuit start stage, the originally all non-conducting of M1, M2, Q1 and Q2, Q1 and Q2 occupies an leading position in feedback, and start-up circuit, to the grid end capacitor charging of M1 and M2, raises grid terminal potential, when after Q1 and Q2 conducting, the voltage V between the base stage of Q1 and Q2 and emitter
bEsubstantially remain unchanged, now current mirror M1 and M2 plays a leading role in feedback, and quiescent point is stablized in negative feedback.So the diagonal positions of 2:1 and 1:8 exchanged (other structures are constant), the feedback characteristics of circuit changes completely, and circuit cannot normally start and work.V
bEconducting voltage is 0.7V, M1 cut-in voltage is approximately 0.6V, therefore M1 grid terminal voltage must be risen to about 1.3V by start-up circuit fast, circuit just can normally start, if do not add start-up circuit, only by the vibration of circuit self, the emitter voltage of Q1 and Q2 all can change slowly, relative positive feedback effect is more weak, and circuit cannot work.
Compensating circuit in offset-type biasing circuit comprises cascode current mirror, the PMOS of falling breadth length ratio MP1 and negative temperature coefficient resister R, as shown in Figure 3, cascode current mirror is used for accurate replica current, MP1 and R is for generation of the voltage-controlled voltage V matched with voltage-controlled delay cell temperature and operational characteristic
ctrl, and voltage-controlled voltage V
ctrllarge I calculated by formula (1).
Wherein, Δ
pfor the overdrive voltage of MP1, Δ
p=V
gS-V
tP, I is the electric current flowing through compensating circuit, k
p, MP1for the process factor of MP1, V
gSfor gate source voltage, V
tPfor the threshold voltage of PMOS.Can be known by formula (1), voltage-controlled voltage V
ctrltemperature coefficient, primarily of threshold voltage V
tP, resistance R and electric current I determine, and V
tPtemperature coefficient be about-2.3mV/ DEG C, electric current I has less positive temperature coefficient, considers concrete designing requirement V
ctrltemperature coefficient be-3.5mV/ DEG C, therefore V
ctrlnegative temperature coefficient not enough, compensating resistance R needs negative temperature coefficient, can compensate requirement by satisfied temperature.
TSMC0.35mm process corner changes successively from ss → tt → ff, threshold voltage V
tPreduce successively.V
ctrlsize is as shown in formula (1), and with tt process corner as a reference, under ss process corner, MP1 branch current diminishes, and MP1 grid terminal voltage increases, and electric current I diminishes and pressure drop RI is diminished, but due to resistance comparatively large, its action effect is more remarkable, therefore V under ss technique
ctr1decline, cause the time delay of voltage-controlled delay unit to reduce; And tt process corner is when becoming ss process corner, due to threshold voltage V
tPbecome large, the time delay of voltage-controlled delay unit can increase, thus reaches the object of technological compensa tion; In like manner, under ff technique, V
ctr1rise, simultaneously threshold voltage V
tPdiminish, also can suppress the change of time delay, final satisfied required technological compensa tion requirement.
Actual offset-type circular type shaker output frequency under different process angle varies with temperature characteristic curve as shown in Figure 4.Main simulated temperature and technique are shaken on ring the impact of output frequency, and process corner selects tt, ss and ff, and thermal creep stress-40 DEG C-40 DEG C, concrete numerical value can see table 1.
Imitative output frequency (unit: MHz) before table 1 ring shakes
Data as can be seen from table 1, under same process corner, effect temperature compensation is substantially good, between-40 DEG C-40 DEG C, output frequency maximum deviation is no more than 6MHz, and output frequency skew is less than 4%, when flow-route and temperature acting in conjunction, the output frequency that ring shakes changes greatly, and maximum change is about 6%.
The above is only the preferred embodiment of the present invention; be noted that for those skilled in the art; under the premise without departing from the principles of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (5)
1. temperature and a technological compensa tion type ring oscillator, is characterized in that: comprise ring oscillator and offset-type biasing circuit; Described ring oscillator comprises some voltage-controlled delay unit and an alternative gate controlled switch, all voltage-controlled delay unit looping delay-line structures, and alternative gate controlled switch is for controlling starting of oscillation and the failure of oscillation of ring oscillator; The described voltage-controlled delay cell delay time, by the impact of technique change and temperature drift, shows as positive temperature characterisitic, and with voltage-controlled voltage positive correlation; Described offset-type biasing circuit comprises biased main body circuit and compensating circuit, produces and has negative temperature characteristic and the voltage-controlled voltage relevant to technique change; The change of the time of delay caused due to technique change and temperature drift by voltage-controlled delay unit in the voltage-controlled voltage compensation ring oscillator of offset-type biasing circuit, the compensation method of employing is open loop compensation approach.
2. temperature according to claim 1 and technological compensa tion type ring oscillator, it is characterized in that: the compensating circuit in described offset-type biasing circuit comprises resistance automatic biasing common-source common-gate current mirror, the PMOS of falling breadth length ratio and negative temperature coefficient resister, wherein the gate pmos of falling breadth length ratio end is connected with the NMOS tube drain terminal of resistance automatic biasing common-source common-gate current mirror, between the NMOS tube drain terminal that negative temperature coefficient resister is connected to resistance automatic biasing common-source common-gate current mirror and the PMOS of falling breadth length ratio drain terminal, the PMOS of falling breadth length ratio source connects supply voltage, the PMOS of falling breadth length ratio drain terminal connects voltage-controlled voltage.
3. temperature according to claim 1 and technological compensa tion type ring oscillator, is characterized in that: the biased main body circuit in described offset-type biasing circuit adopts the basic △ V of tape starting circuit
bE/ R type two-way bias structure, basic △ V
bEcurrent mirror in/R type two-way bias structure adopts resistance automatic biasing cascodes to provide stable bias voltage for compensating circuit.
4. temperature according to claim 1 and technological compensa tion type ring oscillator, it is characterized in that: the voltage-controlled delay unit in described ring oscillator adopts the inverter of voltage-controlled metal-oxide-semiconductor control capacitance load, and ring oscillator employing has the ring delay line structure determining first phase, namely in ring oscillator, all voltage-controlled delay unit form the ring delay line structure determining first phase.
5. temperature according to claim 1 and technological compensa tion type ring oscillator, it is characterized in that: the alternative gate controlled switch in described ring oscillator and first order voltage-controlled delay unit serve as the anti-phase time delay of one-level, anti-phase time delay and each Non-inverting delay unit delay match, realize being uniformly distributed of phase node.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510520955.4A CN105071803A (en) | 2015-08-21 | 2015-08-21 | Temperature and process compensation ring oscillator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510520955.4A CN105071803A (en) | 2015-08-21 | 2015-08-21 | Temperature and process compensation ring oscillator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105071803A true CN105071803A (en) | 2015-11-18 |
Family
ID=54501108
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510520955.4A Pending CN105071803A (en) | 2015-08-21 | 2015-08-21 | Temperature and process compensation ring oscillator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105071803A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108155901A (en) * | 2016-12-05 | 2018-06-12 | 中国工程物理研究院电子工程研究所 | A kind of anti-parameter drift phase inverter |
| CN108933593A (en) * | 2018-05-30 | 2018-12-04 | 上海华力集成电路制造有限公司 | Delay locked-loop circuit |
| CN109547018A (en) * | 2018-11-28 | 2019-03-29 | 中国人民解放军国防科技大学 | Multi-bias voltage-controlled oscillator with anti-irradiation function |
| CN110266270A (en) * | 2018-03-12 | 2019-09-20 | 艾普凌科有限公司 | Oscillating circuit |
| CN112653411A (en) * | 2020-12-15 | 2021-04-13 | 重庆西南集成电路设计有限责任公司 | Temperature compensation circuit and method for numerical control phase shift/digital attenuator |
| CN113162549A (en) * | 2021-03-09 | 2021-07-23 | 西安理工大学 | Voltage-controlled oscillator based on TSV vertical switch |
| CN115509288A (en) * | 2022-10-26 | 2022-12-23 | 沐曦科技(北京)有限公司 | Chip core voltage regulation compensating system |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090224819A1 (en) * | 2005-08-17 | 2009-09-10 | Rohm Co., Ltd. | Constant current circuit, and inverter and oscillation circuit using such constant current circuit |
| CN101753115A (en) * | 2008-10-09 | 2010-06-23 | 盛群半导体股份有限公司 | Temperature compensation circuit and method |
| CN201563108U (en) * | 2009-11-25 | 2010-08-25 | 天津南大强芯半导体芯片设计有限公司 | Temperature and voltage compensation type oscillator circuit |
| CN203554414U (en) * | 2013-11-18 | 2014-04-16 | 四川和芯微电子股份有限公司 | Oscillator |
| CN103944512A (en) * | 2014-04-17 | 2014-07-23 | 重庆西南集成电路设计有限责任公司 | Oscillator circuit with high frequency stability and negative temperature coefficient current source circuit |
-
2015
- 2015-08-21 CN CN201510520955.4A patent/CN105071803A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090224819A1 (en) * | 2005-08-17 | 2009-09-10 | Rohm Co., Ltd. | Constant current circuit, and inverter and oscillation circuit using such constant current circuit |
| CN101753115A (en) * | 2008-10-09 | 2010-06-23 | 盛群半导体股份有限公司 | Temperature compensation circuit and method |
| CN201563108U (en) * | 2009-11-25 | 2010-08-25 | 天津南大强芯半导体芯片设计有限公司 | Temperature and voltage compensation type oscillator circuit |
| CN203554414U (en) * | 2013-11-18 | 2014-04-16 | 四川和芯微电子股份有限公司 | Oscillator |
| CN103944512A (en) * | 2014-04-17 | 2014-07-23 | 重庆西南集成电路设计有限责任公司 | Oscillator circuit with high frequency stability and negative temperature coefficient current source circuit |
Non-Patent Citations (2)
| Title |
|---|
| KRISHNAKUMAR SUNDARESAN 等: "Process and Temperature Compensation in a 7-MHz CMOS Clock Oscillator", 《IEEE JOURNAL OF SOLID-STATE CIRCUITS》 * |
| 李扶苏 等: "一种带高阶温度补偿的片内时钟振荡器设计", 《电路与系统学报》 * |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108155901A (en) * | 2016-12-05 | 2018-06-12 | 中国工程物理研究院电子工程研究所 | A kind of anti-parameter drift phase inverter |
| CN108155901B (en) * | 2016-12-05 | 2023-11-24 | 中国工程物理研究院电子工程研究所 | Parameter drift resistance inverter |
| CN110266270A (en) * | 2018-03-12 | 2019-09-20 | 艾普凌科有限公司 | Oscillating circuit |
| CN108933593A (en) * | 2018-05-30 | 2018-12-04 | 上海华力集成电路制造有限公司 | Delay locked-loop circuit |
| CN109547018A (en) * | 2018-11-28 | 2019-03-29 | 中国人民解放军国防科技大学 | Multi-bias voltage-controlled oscillator with anti-irradiation function |
| CN109547018B (en) * | 2018-11-28 | 2022-08-09 | 中国人民解放军国防科技大学 | Multi-bias voltage-controlled oscillator with anti-irradiation function |
| CN112653411A (en) * | 2020-12-15 | 2021-04-13 | 重庆西南集成电路设计有限责任公司 | Temperature compensation circuit and method for numerical control phase shift/digital attenuator |
| CN112653411B (en) * | 2020-12-15 | 2022-08-19 | 重庆西南集成电路设计有限责任公司 | Temperature compensation circuit and method for numerical control phase shift/digital attenuator |
| CN113162549A (en) * | 2021-03-09 | 2021-07-23 | 西安理工大学 | Voltage-controlled oscillator based on TSV vertical switch |
| CN113162549B (en) * | 2021-03-09 | 2023-07-18 | 西安理工大学 | Voltage-controlled oscillator based on TSV vertical switch |
| CN115509288A (en) * | 2022-10-26 | 2022-12-23 | 沐曦科技(北京)有限公司 | Chip core voltage regulation compensating system |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105071803A (en) | Temperature and process compensation ring oscillator | |
| CN105099445B (en) | The control method for frequency and circuit of a kind of ring oscillator | |
| CN100547905C (en) | Circulation circuit voltage-controlled oscillator with temperature compensation effect | |
| CN102136840B (en) | Self-biased phase-locked loop | |
| US20090289725A1 (en) | Self-Biased Phase Locked Loop | |
| CN101572549B (en) | Self-biased phase-locked loop and phase locking method | |
| CN102064801B (en) | All-silicon clock generator realized on basis of complementary metal oxide semiconductor (CMOS) process | |
| CN103078635A (en) | Embedded oscillation circuit | |
| CN105207670B (en) | It is segmented low pressure control gain ring oscillator and tuning slope change-over circuit | |
| US10622943B2 (en) | Oscillator | |
| CN103475337A (en) | RC (resistor-capacitor) oscillator | |
| CN104270147A (en) | Ring oscillator | |
| CN114785340A (en) | Frequency band phase-locked loop based on programmable capacitor array | |
| CN104135277A (en) | An on-chip reference clock generation circuit and method thereof | |
| CN106444344B (en) | A kind of high stable clock generation circuit based on automatic biasing frequency-locked loop | |
| CN103944514A (en) | Amplitude detection control circuit and numerical control crystal oscillator system | |
| CN101127525A (en) | A deviation setting circuit and voltage controlled oscillator | |
| CN115395888A (en) | Low-power-consumption high-precision RC oscillator based on cycle detection | |
| CN101552592B (en) | CMOS current automatic control crystal oscillator | |
| JP2001326560A (en) | Semiconductor integrated circuit and phase locked loop circuit | |
| CN102545779B (en) | Crystal-oscillation-free clock circuit | |
| CN202998064U (en) | An internally-disposed oscillation circuit | |
| CN203482169U (en) | Rc oscillator | |
| Tang et al. | A fully integrated 28nm CMOS dual source adaptive thermoelectric and RF energy harvesting circuit with 110mv startup voltage | |
| CN103312267A (en) | High-accuracy oscillator and frequency generating method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20151118 |
|
| WD01 | Invention patent application deemed withdrawn after publication |