CN103475337A - RC (resistor-capacitor) oscillator - Google Patents
RC (resistor-capacitor) oscillator Download PDFInfo
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Abstract
The invention relates to an RC (resistor-capacitor) oscillator which comprises a working voltage, a reference circuit module, a first P-channel MOS (metal oxide semiconductor) tube, a third P-channel MOS tube, a fourth P-channel MOS tube, an oscillation core logic circuit, a first discharge switch, a second discharge switch, a first time sequence capacitor and a second time sequence capacitor. The RC oscillator is characterized in that a second end of the first discharge switch and a second end of the second discharge switch are respectively provided with a source degeneration current source composed of an N-channel MOS tube and a degeneration resistor. Based on the characteristic that output impedance of the source degeneration current source changes with temperature and current, the residual charge quantity on the time sequence capacitors can counteract the change of clock frequency caused by change of temperature and voltage of a working power supply, thereby realizing the RC oscillator having low temperature drift.
Description
[technical field]
The invention belongs to the integrated circuit (IC) design technical field, be specifically related to a kind of RC oscillator.
[background technology]
Generally, the RC oscillator produces oscillating clock signal by the time delay that discharges and recharges to electric capacity, and the clock signal frequency that the sort circuit structure produces easily is subject to the impact of the factors such as chip power supply voltage, surrounding working environment temperature.In order to overcome the impact on RC oscillator output clock frequency of working power voltage and ambient temperature, numerous designs and invention have proposed various high-precision RC oscillators.Fig. 1 is classical RC oscillator, and it comprises: reference circuit module 1, P channel MOS tube Mp1S, P channel MOS tube Mp2S, P channel MOS tube Mp3S, vibration core logic circuit 3, the first sequential capacitor C t1S, the second sequential capacitor C t2S, the first discharge switch S1, the second discharge switch S2.Vibration core logic circuit 3 is provided with the first comparison input 31, second and compares input 32, reference voltage input 33, the first control signal output 34, the second control signal output 35 and clock signal output terminal 36.
Reference circuit module 1 is provided with reference voltage output end 12 and circuit input end 11; Circuit input end 11 connects the drain electrode of P channel MOS tube Mp1S, the source electrode of P channel MOS tube Mp1S connects working power V, the grid of P channel MOS tube Mp1S connects the drain electrode of P channel MOS tube Mp1S, reference voltage output end 12 connects reference voltage input 33, and the electric current of the P channel MOS tube Mp1S that flows through is as reference current.
Reference circuit module 1 specifically comprises bandgap voltage reference Bandgap, comparison amplifier CP, N-channel MOS pipe MnS, resistance R s and DC current source Iref, bandgap voltage reference Bandgap connects the positive input terminal of working power VDD and its output connection comparison amplifier CP, the negative input end of comparison amplifier CP connects the source electrode of N-channel MOS pipe MnS and the first end of resistance R s, the second end of resistance R s is by DC current source Iref ground connection, the output of comparison amplifier CP connects the grid of N-channel MOS pipe MnS, the source electrode of N-channel MOS pipe MnS is as reference voltage output end 12, the drain electrode of N-channel MOS pipe MnS is as circuit input end 11.
The source electrode of P channel MOS tube Mp2S all is connected working power V with the source electrode of P channel MOS tube Mp3S, the grid of the grid of P channel MOS tube Mp2S, P channel MOS tube Mp3S all connects the grid of P channel MOS tube Mp1S, the drain electrode of P channel MOS tube Mp2S connects the first end of the first sequential capacitor C t1S, and the drain electrode of P channel MOS tube Mp3S connects the first end of the second sequential capacitor C t1S.The first end of the first discharge switch S1 connects the first end of the first sequential capacitor C t1S, and the second end of the first discharge switch S1 connects ground; The first end of the second discharge switch S2 connects the first end of the second sequential capacitor C t2S, and the second end of the second sequential capacitor C t2S connects ground.First compares the first end that input 31 connects the first sequential capacitor C t1S, the second output 23 connects the first end of the second sequential capacitor C t2S, the first control signal output 34 is controlled the break-make of the first discharge switch S1, and the second control signal output 35 is controlled the break-make of the second discharge switch S2.The second end of the second end of the first sequential capacitor C t1S, the second sequential capacitor C t2S all connects ground.
Specifically, the groundwork principle is: reference circuit module 1 and P channel MOS tube Mp1S, working power V produce reference voltage and reference current jointly, P channel MOS tube Mp2S, P channel MOS tube Mp3S form current mirror with P channel MOS tube Mp1S respectively, P channel MOS tube Mp2S, P channel MOS tube Mp3S respectively mirror image the said reference electric current; Metal-oxide-semiconductor Mp2S gives the first sequential capacitor C t1S charging with fixed slope, and the positive terminal voltage Va on sequential capacitor C t1S rises to reference voltage V
refthe time, comparator upset in the vibration core logic circuit, the first discharge switch S1 closure that control is connected with the first sequential capacitor C t1S, rapidly the electric charge on Ct1S is bled off, because the conduction impedance of the first discharge switch S1 is far smaller than the conduction impedance of metal-oxide-semiconductor Mp2S, so, at the first discharge switch S1 period of contact, the positive terminal voltage Va of the first sequential capacitor C t1S is always close to 0 level; Almost in first discharge switch S1 closed pair the first sequential capacitor C t1S electric discharge, the second discharge switch S2 disconnects, metal-oxide-semiconductor Mp3S starts the second sequential capacitor C t2S charging, and the voltage Vb of anode starts to rise with fixed slope, until the magnitude of voltage of voltage Vb reaches reference voltage V
reffollow-up comparator disconnects the first discharge switch S1, closed the second discharge switch S2, metal-oxide-semiconductor Mp2S charges to the first sequential capacitor C t1S with fixed slope again, the second discharge switch S2 bleeds off the electric charge on the second sequential capacitor C t2S fully, the voltage of positive terminal voltage Vb approaches 0 level, and a new charge cycle starts.In above-mentioned oscillator, the waveform of the corresponding positive terminal voltage of two sequential electric capacity and output clock clk as shown in Figure 2.A clock oscillation cycle equals two sequential capacitor C t1S, Ct2S charging interval sum.If charging current is I
char, capacitance is C, and reference voltage value is V
ref, the clock frequency formula is as follows:
The RC oscillator of above-mentioned this structure, although use the reference circuit module 1 of bandgap voltage reference Bandgap can produce not temperature variant reference voltage, but the impact due to temperature coefficient of resistance, the RC oscillator resisting temperature changing capability of this structure is not fine, when using the resistance of dull temperature coefficient type, it is poorer that the temperature coefficient of clock can become.The complicated structure of this RC oscillator, and its minimum operating voltage V in addition
dDmin=V
ref+ V
dsatn+ | V
dsatp|+| V
thp|, be difficult to work under 2v and following working power, be not suitable for the operational environment of novel portable mobile battery equipment power supply.
[summary of the invention]
The technical problem to be solved in the present invention is to provide a kind of RC oscillator, and it has the characteristics of Low Drift Temperature.
Above-mentioned technical problem solves by the following technical programs:
A kind of RC oscillator, comprise operating voltage, reference circuit module, a P channel MOS tube, the 3rd P channel MOS tube, the 4th P channel MOS tube, vibration core logic circuit, the first discharge switch, the second discharge switch, the first sequential electric capacity and the second sequential electric capacity; The reference circuit module is provided with reference voltage output end and circuit output end; The vibration core logic circuit is provided with first and compares input, second relatively input, reference voltage input, the first control signal output, the second control signal output and clock signal output terminal; Circuit output end connects the drain terminal of a P channel MOS tube, and the source electrode of a P channel MOS tube connects working power, and the grid of a P channel MOS tube is connected with drain electrode; The source electrode of the source electrode of the 3rd P channel MOS tube, the 4th P channel MOS tube all connects working power, the grid of the grid of the 3rd P channel MOS tube, the 4th P channel MOS tube all connects the grid of a P channel MOS tube, the drain electrode of the 3rd P channel MOS tube, the first relatively first end of input, the first discharge switch all connects the anode of the first sequential electric capacity, the negativing ending grounding of the first sequential electric capacity; The drain electrode of the 4th P channel MOS tube, the second relatively first end of input, the second discharge switch connects the anode of the second sequential electric capacity, the negativing ending grounding of the second sequential electric capacity; The first control signal output, the second control signal output be corresponding control connection the first discharge switch, the second discharge switch respectively;
It is characterized in that,
Also comprise the 2nd P channel MOS tube, pressure drop module, the first N-channel MOS pipe, the second N-channel MOS pipe, the 3rd N-channel MOS pipe, resistance R s1, degeneration resistance R s2 and degeneration resistance R s3; The source electrode of the 2nd P channel MOS tube connects working power, the grid of the 2nd P channel MOS tube connects the grid of a P channel MOS tube, the drain electrode of the 2nd P channel MOS tube connects the drain electrode of the first N-channel MOS pipe by the pressure drop module, the source electrode of the first N-channel MOS pipe is by resistance R s1 ground connection, and the grid of the first N-channel MOS pipe is connected with drain electrode; The grid of the grid of the second N-channel MOS pipe, the 3rd N-channel MOS pipe all connects the grid of the first N-channel MOS pipe, the source electrode of the second N-channel MOS pipe is by degeneration resistance R s2 ground connection, the drain electrode of the second N-channel MOS pipe connects the second end of the first discharge switch, the source electrode of the 3rd N-channel MOS pipe is by degeneration resistance R s3 ground connection, and the drain electrode of the 3rd N-channel MOS pipe connects the second end of the second discharge switch.
As seen from the above technical solution, the present invention arranges respectively at the second end of the first discharge switch, the second end of the second discharge switch the source-electrode degradation current source consisted of N-channel MOS pipe, degeneration resistance, the output impedance that utilizes the source-electrode degradation current source with the variation characteristic of temperature and electric current make residual charge amount on sequential electric capacity can compensation temperature, working power voltage changes the clock frequency caused and changes; Thereby realize providing a kind of RC oscillator of Low Drift Temperature.In order to guarantee that oscillator can work, the design parameter of each element arranges and must guarantee: the first sequential electric capacity second sequential electric capacity before charging to reference voltage completes electric discharge, and the second sequential electric capacity first sequential electric capacity before charging to reference voltage completes electric discharge.
Further scheme is, between the anode of the drain electrode of described the 3rd P channel MOS tube and described the first sequential electric capacity, is serially connected with compensating resistance Rs4, between the anode of the drain electrode of described the 4th P channel MOS tube and described the second sequential electric capacity, is serially connected with compensating resistance Rs5.This programme has increased respectively a compensating resistance for curent change in the charging circuit of the charging circuit of the first sequential electric capacity, the second sequential electric capacity, when the operating voltage increase causes reference current to increase, pressure drop on compensating resistance also can increase, thereby make the growth rate of sequential capacitor discharge residual charge rate of rise well below working power voltage, almost can think constant.This negative feedback mechanism makes the output frequency of RC oscillator can change because of the change in voltage of working power hardly, has very high Power Supply Rejection Ratio.
Further scheme is, compensating resistance Rs4 and compensating resistance Rs5 are identical element.
Further scheme is, resistance R s1, degeneration resistance R s2, degeneration resistance R s3 adopt the resistance of the positive temperature coefficient of same type to realize.
Further scheme is, resistance R s1, degeneration resistance R s2, degeneration resistance R s3 realize by the active impedance element of the positive temperature coefficient of same type.
Further scheme is, degeneration resistance R s2 and degeneration resistance R s3 are identical element, and the second N-channel MOS Guan Yu tri-N-channel MOS pipes are identical element, and the 3rd P channel MOS tube and the 4th P channel MOS tube are identical element.
Further scheme is, described vibration core logic circuit comprises the first comparator, the second comparator, the first NOR gate, the second NOR gate, the first not gate, the second not gate, buffer, the negative input end of the negative input end of the first comparator and the second comparator interconnects and is connected reference voltage output end as reference voltage input, the positive input terminal of the first comparator connects the anode of the first sequential electric capacity, the positive input terminal of the second comparator connects the anode of the second sequential electric capacity, the output of the first comparator connects the first input end of the first NOR gate, the output of the second comparator connects the first input end of the second NOR gate, the output of the first NOR gate connects the second input of the second NOR gate, the input of the first not gate, the output of the second NOR gate connects the second input of the first NOR gate, the output of the first not gate connects the input of the second not gate, the output of the second not gate connects the input of buffer, the output of the first not gate is as the first control signal output, the output of the second not gate is as the second control signal output.
Described reference circuit module comprises resistance R v1, resistance R v2 and DC current source, the second end of resistance R v1 is successively by resistance R v2, DC current source ground connection, the first end of resistance R v1 connects the drain terminal of a P channel MOS tube Mp1 as circuit output end, the second end of resistance R v1 is as reference voltage output end.Adopt the reference circuit module of this structure, make this oscillator to work under 2v and following working power, be applicable to the operational environment of Portable movable battery apparatus power supply.
[accompanying drawing explanation]
Fig. 1 is the circuit structure of the RC oscillator in background technology;
Fig. 2 is the node voltage of two sequential electric capacity of the RC oscillator in background technology and the waveform of output clock clk;
The structure chart that Fig. 3 is RC oscillator of the present invention;
The structure chart that Fig. 4 is vibration core logic circuit of the present invention;
Fig. 5 is the positive terminal voltage of sequential electric capacity of the present invention and the waveform of output clock clk;
Fig. 6 is positive terminal voltage, residual voltage and the output clock clk of the sequential electric capacity of the present invention variation waveform with ambient temperature;
Fig. 7 is positive terminal voltage, residual voltage and the output clock clk of the sequential electric capacity of the present invention variation waveform with operating voltage.
[embodiment]
As shown in Figure 3, the RC oscillator comprises: operating voltage V, reference circuit module 10, the one P channel MOS tube Mp1, the 2nd P channel MOS tube Mp2, the 3rd P channel MOS tube Mp3, the 4th P channel MOS tube Mp4, compensating resistance Rs4, compensating resistance Rs5, pressure drop module Vdc, the first N-channel MOS pipe Mn1, the second N-channel MOS pipe Mn2, the 3rd N-channel MOS pipe Mn3, resistance R s1, degeneration resistance R s2, degeneration resistance R s3, vibration core logic circuit 30, the first sequential capacitor C t1, the second sequential capacitor C t2, the first discharge switch sw_a, the second discharge switch sw_b.
In the present embodiment, compensating resistance Rs4 and compensating resistance Rs5 are identical element, degeneration resistance R s2 and degeneration resistance R s3 are identical element, the second N-channel MOS pipe Mn2 and the 3rd N-channel MOS pipe Mn3 are identical element, and the 3rd P channel MOS tube Mp3 and the 4th P channel MOS tube Mp4 are identical element.
Vibration core logic circuit 3 is provided with the first comparison input 301, second and compares input 302, reference voltage input 303, the first control signal output 304, the second control signal output 305 and clock signal output terminal 306.
The reference circuit module is provided with circuit output end and reference voltage output end.The reference circuit module comprises resistance R v1, resistance R v2 and benchmark DC current source Iref, the second end of resistance R v1 is successively by resistance R v2, DC current source Iref ground connection, and the first end of resistance R v1 connects the drain terminal of a P channel MOS tube Mp1 as circuit output end; The source electrode of the one P channel MOS tube Mp1 connects working power VDD, and the grid of a P channel MOS tube Mp1 is connected with drain electrode.Reference circuit module 10 and a P channel MOS tube, working power VDD produce the reference passageway of reference current, reference voltage, and the electric current of this path of flowing through is reference current, and the second end of resistance R v1 connects reference voltage input 303 as reference voltage output end.Adopt said reference circuit module 10, make this oscillator to work under 2v and following working power, be applicable to the operational environment of Portable movable battery apparatus power supply.
Resistance R v1, resistance R v2 are variable resistor, by the adjustment to the variable resistor resistance, can after chip production, to the clock frequency of oscillator, carry out process deviation and trim.The effect of DC current source Iref is in order to guarantee and the ground isolation, allows the reference current, the reference voltage that produce not be subject to the ground noise effect.
The source electrode of the 2nd P channel MOS tube Mp2 connects working power VDD, the grid of the 2nd P channel MOS tube Mp2 connects the grid of a P channel MOS tube Mp1, the drain electrode of the 2nd P channel MOS tube Mp2 connects the drain electrode of the first N-channel MOS pipe Mn1 by pressure drop module Vdc, the source electrode of the first N-channel MOS pipe Mn1 is by resistance R s1 ground connection, and the grid of the first N-channel MOS pipe Mn1 is connected with drain electrode;
The grid of the second N-channel MOS pipe Mn2, the grid of the 3rd N-channel MOS pipe Mn3 all connects the grid of the first N-channel MOS pipe Mn1, the source electrode of the second N-channel MOS pipe Mn2 is by degeneration resistance R s2 ground connection, the drain electrode of the second N-channel MOS pipe Mn2 connects the second end of the first discharge switch sw_a, the source electrode of the 3rd N-channel MOS pipe Mn3 is by degeneration resistance R s3 ground connection, the drain electrode of the 3rd N-channel MOS pipe Mn3 connects the second end of the second discharge switch sw_b, the first end of the first discharge switch sw_a connects the anode of the first sequential capacitor C t1, the first end of the second discharge switch sw_b connects the anode of the second sequential capacitor C t2.
The source electrode of the source electrode of the 3rd P channel MOS tube Mp3, the 4th P channel MOS tube Mp4 all connects working power VDD, the grid of the grid of the 3rd P channel MOS tube Mp3, the 4th P channel MOS tube Mp4 all connects the grid of a P channel MOS tube Mp1, the drain electrode of the 3rd P channel MOS tube Mp3 connects the anode of the first sequential capacitor C t1, the negativing ending grounding of the first sequential capacitor C t1 by compensating resistance Rs4; The drain electrode of the 4th P channel MOS tube Mp4 connects the anode of the second sequential capacitor C t2, the negativing ending grounding of the second sequential capacitor C t2 by compensating resistance Rs5.
The second end of the reference voltage input 303 contact resistance Rv1 of vibration core logic circuit 3, first compares the anode that input 301 connects the first sequential capacitor C t1, second compares the anode that input 302 connects the second sequential capacitor C t2, the first control signal output 304 is controlled the first discharge switch sw_a, the second control signal output 305 is controlled the second discharge switch sw_b, and clock signal output terminal 306 is as the output of this oscillator.
Vibration core logic circuit 3 comprises the first comparator 311, the second comparator 322, the first NOR gate 313, the second NOR gate 314, the first not gate 315, the second not gate 316, buffer 317, the negative input end of the negative input end of the first comparator 311 and the second comparator 322 interconnects and as the second end of reference voltage input 303 contact resistance Rv1, the positive input terminal of the first comparator 311 connects the anode of the first sequential capacitor C t1, the positive input terminal of the second comparator 322 connects the anode of the second sequential capacitor C t2, the output of the first comparator 311 connects the first input end of the first NOR gate 313, the output of the second comparator 322 connects the first input end of the second NOR gate 314, the output of the first NOR gate 313 connects the second input of the second NOR gate 314, the input of the first not gate 315, the output of the second NOR gate 314 connects the second input of the first NOR gate 313, the output of the first not gate 315 connects the input of the second not gate 316, the output of the second not gate 316 connects the input of buffer 317, the output of the first not gate 315 is as the first control signal output 304, the output of the second not gate 316 is as the second control signal output 305.
Principle of the present invention is:
At first reference voltage, reference current are not to utilize the reference circuit module that comprises bandgap voltage reference to produce, but directly by working power VDD, pass through the P channel MOS tube Mp1 series connection be connected with reference circuit module 10, diode type and obtain, the impact of the change in voltage of a part of working power on clock frequency offset in such design; The P channel MOS tube Mp1 series connection dividing potential drop that resistance R v1, Rv2, diode type connect has produced reference voltage V ref, flows through their electric current as reference current I
0; In this circuit, working power VDD, the 3rd P channel MOS tube Mp3, compensating resistance Rs4 are configured for the first charging circuit to the first sequential capacitor C t1 charging, working power VDD, the 4th P channel MOS tube Mp4, compensating resistance Rs5 are configured for the second charging circuit to the second sequential capacitor C t2 charging, because the 3rd P channel MOS tube Mp3, the 4th P channel MOS tube Mp4 form current mirror, the 3rd P channel MOS tube Mp3, the equal mirror image said reference of the 4th P channel MOS tube Mp4 electric current I with a P channel MOS tube Mp1 respectively
0and obtain charging current I
fillthereby, form respectively charging current source; The first charging circuit, the second charging circuit all use I
fillrespectively to the first sequential capacitor C t1, the second sequential capacitor C t2 charging;
The anode of the anode of the first sequential capacitor C t1, the second sequential capacitor C t2 is all delivered to the oscillator core control logic, and the vibration core control logic judges the positive terminal voltage V(Va of the first sequential capacitor C t1), the positive terminal voltage V(Vb of the second sequential capacitor C t2) whether reached reference voltage V
refif, as the positive terminal voltage V(Va of one of them sequential electric capacity (if being the first sequential capacitor C t1)) and over reference voltage V
refthe first discharge switch sw_a that control logic is closed and is connected with the first sequential capacitor C t1, discharge to this first sequential capacitor C t1; Meanwhile, disconnect the second discharge switch sw_b be connected with another sequential electric capacity (the second sequential capacitor C t2), start the charge cycle of this second sequential capacitor C t2; So circulation; The waveform of two positive terminal voltages of sequential electric capacity of the present invention, output clock clk as shown in Figure 5.
In this circuit, form the first discharge circuit to the first sequential capacitor C t1 electric discharge by the second N-channel MOS pipe Mn2, degeneration resistance R s2 and the first discharge switch sw_a, by the 3rd N-channel MOS pipe Mn3, degeneration resistance R s3 and the second discharge switch sw_b, form the second discharge circuit to the second sequential capacitor C t2 electric discharge.
Due to the 2nd P channel MOS tube Mp2 and P channel MOS tube Mp1 formation current mirror, the 2nd P channel MOS tube Mp2 mirror image said reference electric current obtains intermediate current I
in, this intermediate current I
inand send into the first N-channel MOS pipe Mn1 through pressure drop module Vdc, because the second N-channel MOS pipe Mn2, the 3rd N-channel MOS pipe Mn3 form current mirror, the second N-channel MOS pipe Mn2, the equal mirror image intermediate current of the 3rd N-channel MOS pipe Mn3 I with the first N-channel MOS pipe Mn1 respectively
inobtain discharging current I
putthereby, forming respectively the discharging current source, the second N-channel MOS pipe Mn2 and degeneration resistance R s2 form the first source-electrode degradation current source, and the 3rd N-channel MOS pipe Mn3 and degeneration resistance R s3 form the second source-electrode degradation current source.For the temperature coefficient characteristics of optimization is provided, above-mentioned resistance R s1, degeneration resistance R s2, degeneration resistance R s3 adopt the resistance of the positive temperature coefficient of same type to realize, can certainly be realized by the active impedance element of the positive temperature coefficient of same type; Adopt the resistance of zero/negative temperature coefficient of same type, effect is not very good comparatively speaking.
In order to guarantee that oscillator can work, the design parameter of each element arranges and must guarantee: the first sequential electric capacity second sequential electric capacity before charging to reference voltage completes electric discharge, and the second sequential electric capacity first sequential electric capacity before charging to reference voltage completes electric discharge; In the present embodiment, be embodied in: require discharging current I
putcharging current I
fill.Due to mirror, charging current I
fill, intermediate current I
in, discharging current I
putall with reference current I
0proportional relation; By adjusting the parameter of (the 3rd P channel MOS tube Mp3 and the 4th P channel MOS tube Mp4), can adjust charging current I
fill; By adjusting the 2nd P channel MOS tube Mp2 or/and the parameter of (the 3rd P channel MOS tube Mp3, the 4th P channel MOS tube Mp4) can be adjusted discharging current I
put.
The present invention mainly utilize the output impedance of source-electrode degradation current source with the characteristic of temperature, curent change, control corresponding sequential electric capacity electric discharge residual charge amount the number, thereby keep the stability of oscillator output frequency of oscillation.Concrete principle is explained in detail as follows.
Sequential capacitor discharge residual voltage Approximate Equivalent is in the dividing potential drop of the equiva lent impedance of the equiva lent impedance of charging circuit and discharge circuit;
The equiva lent impedance that the discharge circuit impedance is the source-electrode degradation current source is approximately:
R wherein
dsn, g
mn, g
mbnbe respectively equivalent drain-source impedance, equivalent transconductance, the equivalent substrate mutual conductance in discharging current source, R
sresistance for degeneration resistance.
The charging circuit equiva lent impedance is approximately:
R
ch=r
dsp+R
sch
R wherein
dspbe respectively the drain-source equiva lent impedance of charging current source, R
schresistance for compensating resistance.
Sequential capacitor discharge residual voltage is approximately:
By R
disch, R
chthe substitution above formula obtains
K wherein
1=r
dsp/ r
dsn1, and K
1be approximately constant, K
2=R
sch/ r
dsn, K
2vary with temperature very little.By above-mentioned V
residueexpression formula can be found out, if R
sfor positive temperature coefficient, V
residuethe molecule of expression formula increases along with the increase of temperature, and the electric discharge residual voltage on sequential electric capacity will increase along with the rising of temperature so.If in one-period, sequential electric capacity residual charge amount increases, when charging current remains unchanged, in the next clock cycle, the sequential capacitor charging time will diminish, because the sequential capacitance voltage that the comparator upset needs is always V
ref, while overturning, the quantity of electric charge of sequential electric capacity is always fixed.If the residual quantity of electric charge of upper one-period is larger, charging interval of needing in this cycle will reduce.If charging current reduces, the charging interval can remain unchanged.The ambient temperature rising, cause that charging current reduces, and the output impedance of source-electrode degradation current source is risen and increases along with temperature, causes that sequential electric capacity residual charge amount increases, and compensated charging current and reduced the charging interval increase caused.Thereby the approximate maintenance of clock cycle and then clock frequency does not vary with temperature, and can say that clock frequency has lower temperature drift coefficient yet.As shown in Figure 6, in figure, display timing generator electric capacity residual voltage rises along with the increase of temperature, is ptc characteristics for the positive terminal voltage of sequential electric capacity of the present invention and the temperature variant waveform of clock signal.
When working power VDD increases, reference current increases, thereby charging current increases, and the sequential capacitor charging time reduces.The present invention has increased the compensating resistance for curent change in charging circuit.When charging current increases, the pressure drop on compensating resistance also can increase, and the increase of sequential electric capacity residual voltage can be cancelled to a great extent.Due to r
dsn=1/ λ I
dsn, above residual voltage V on sequential electric capacity
residueformula can be re-expressed as:
Along with the increase of working power VDD, reference current also can increase, the discharging current I of source-electrode degradation current source
dsnalso can increase, certainly the mutual conductance g in discharging current source
mn, g
mbnalso can increase, but g
mn, g
mbnincrease be and discharging current I
dsnsquare root proportional, and denominator is along with I
dsnincrease, so residual voltage V on above-mentioned sequential electric capacity
residuein expression formula, the coefficient of VDD is along with I
dsnincrease reduce, the existence of compensating resistance has compensated the increase of the residual voltage that the voltage increase of working power causes, has finally greatly suppressed the variation of the output clock frequency that the change in voltage due to working power causes.The existence of compensating resistance makes oscillator output clock frequency of the present invention have very high Power Supply Rejection Ratio.The positive terminal voltage of sequential electric capacity of the present invention and clock signal are with the waveform of the change in voltage of working power as shown in Figure 7.Accompanying drawing 7 shows, sequential electric capacity residual voltage is along with the voltage increase of working power only shows very small increase, and the caused clock frequency of the residual charge of increase increases, and is far smaller than the specification of the frequency deviation of clock that most of SOC (system on a chip) can tolerate.
Work as in addition working power constant, when other factors causes that as temperature reference current increases, compensating resistance can reduce residual voltage especially, reduction due to sequential electric capacity residual voltage, although charging current increases, but the quantity of electric charge that need to be supplementary due to the next clock cycle also can increase, thus the charging interval of next clock cycle can not shorten, but approximate constant; So having suppressed reference current greatly, the existence of compensating resistance changes the impact on clock frequency.
Seen from the above description, this embodiment provides a kind of and can work under low-voltage, and has the RC oscillator of good opposing working power voltage variation and variation of ambient temperature ability.
The present invention is not limited to above-described embodiment, based on above-described embodiment, simple replacement that do not make creative work, should belong to the scope that the present invention discloses.
Claims (8)
1. a RC oscillator, comprise operating voltage, reference circuit module, a P channel MOS tube, the 3rd P channel MOS tube, the 4th P channel MOS tube, vibration core logic circuit, the first discharge switch, the second discharge switch, the first sequential electric capacity and the second sequential electric capacity; The reference circuit module is provided with reference voltage output end and circuit output end; The vibration core logic circuit is provided with first and compares input, second relatively input, reference voltage input, the first control signal output, the second control signal output and clock signal output terminal; Circuit output end connects the drain terminal of a P channel MOS tube, and the source electrode of a P channel MOS tube connects working power, and the grid of a P channel MOS tube is connected with drain electrode; The source electrode of the source electrode of the 3rd P channel MOS tube, the 4th P channel MOS tube all connects working power, the grid of the grid of the 3rd P channel MOS tube, the 4th P channel MOS tube all connects the grid of a P channel MOS tube, the drain electrode of the 3rd P channel MOS tube, the first relatively first end of input, the first discharge switch all connects the anode of the first sequential electric capacity, the negativing ending grounding of the first sequential electric capacity; The drain electrode of the 4th P channel MOS tube, the second relatively first end of input, the second discharge switch connects the anode of the second sequential electric capacity, the negativing ending grounding of the second sequential electric capacity; The first control signal output, the second control signal output be corresponding control connection the first discharge switch, the second discharge switch respectively;
It is characterized in that,
Also comprise the 2nd P channel MOS tube, pressure drop module, the first N-channel MOS pipe, the second N-channel MOS pipe, the 3rd N-channel MOS pipe, resistance R s1, degeneration resistance R s2 and degeneration resistance R s3; The source electrode of the 2nd P channel MOS tube connects working power, the grid of the 2nd P channel MOS tube connects the grid of a P channel MOS tube, the drain electrode of the 2nd P channel MOS tube connects the drain electrode of the first N-channel MOS pipe by the pressure drop module, the source electrode of the first N-channel MOS pipe is by resistance R s1 ground connection, and the grid of the first N-channel MOS pipe is connected with drain electrode; The grid of the grid of the second N-channel MOS pipe, the 3rd N-channel MOS pipe all connects the grid of the first N-channel MOS pipe, the source electrode of the second N-channel MOS pipe is by degeneration resistance R s2 ground connection, the drain electrode of the second N-channel MOS pipe connects the second end of the first discharge switch, the source electrode of the 3rd N-channel MOS pipe is by degeneration resistance R s3 ground connection, and the drain electrode of the 3rd N-channel MOS pipe connects the second end of the second discharge switch.
2. RC oscillator according to claim 1, it is characterized in that, be serially connected with compensating resistance Rs4 between the anode of the drain electrode of described the 3rd P channel MOS tube and described the first sequential electric capacity, between the anode of the drain electrode of described the 4th P channel MOS tube and described the second sequential electric capacity, be serially connected with compensating resistance Rs5.
3. RC oscillator according to claim 2, is characterized in that, compensating resistance Rs4 and compensating resistance Rs5 are identical element.
4. RC oscillator according to claim 1, is characterized in that, resistance R s1, degeneration resistance R s2, degeneration resistance R s3 adopt the resistance of the positive temperature coefficient of same type to realize.
5. RC oscillator according to claim 1, is characterized in that, resistance R s1, degeneration resistance R s2, degeneration resistance R s3 realize by the active impedance element of the positive temperature coefficient of same type.
6. RC oscillator according to claim 1, it is characterized in that, degeneration resistance R s2 and degeneration resistance R s3 are identical element, and the second N-channel MOS Guan Yu tri-N-channel MOS pipes are identical element, and the 3rd P channel MOS tube and the 4th P channel MOS tube are identical element.
7. RC oscillator according to claim 1, it is characterized in that, described vibration core logic circuit comprises the first comparator, the second comparator, the first NOR gate, the second NOR gate, the first not gate, the second not gate, buffer, the negative input end of the negative input end of the first comparator and the second comparator interconnects and is connected reference voltage output end as reference voltage input, the positive input terminal of the first comparator connects the anode of the first sequential electric capacity, the positive input terminal of the second comparator connects the anode of the second sequential electric capacity, the output of the first comparator connects the first input end of the first NOR gate, the output of the second comparator connects the first input end of the second NOR gate, the output of the first NOR gate connects the second input of the second NOR gate, the input of the first not gate, the output of the second NOR gate connects the second input of the first NOR gate, the output of the first not gate connects the input of the second not gate, the output of the second not gate connects the input of buffer, the output of the first not gate is as the first control signal output, the output of the second not gate is as the second control signal output.
8. according to the described RC oscillator of claim 1 to 7 any one, it is characterized in that, described reference circuit module comprises resistance R v1, resistance R v2 and isolation current source, the second end of resistance R v1 is successively by resistance R v2, isolation current source ground connection, the first end of resistance R v1 connects the drain terminal of a P channel MOS tube Mp1 as circuit output end, the second end of resistance R v1 is as reference voltage output end.
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| CN107968653A (en) * | 2017-12-18 | 2018-04-27 | 深圳大学 | A kind of clock optimization circuit for reducing switched-capacitor circuit nonlinearity erron |
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