CN104184469A - Ring oscillator with low power consumption and low temperature coefficient - Google Patents
Ring oscillator with low power consumption and low temperature coefficient Download PDFInfo
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- CN104184469A CN104184469A CN201410420371.5A CN201410420371A CN104184469A CN 104184469 A CN104184469 A CN 104184469A CN 201410420371 A CN201410420371 A CN 201410420371A CN 104184469 A CN104184469 A CN 104184469A
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- inverter
- temperature coefficient
- oscillator
- circuit
- pmos
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Abstract
Oscillators are widely used for integration circuits needing internal clocks, such as various switching circuits and digital circuits. In the design of a low-power-consumption integration circuit, power consumption of an oscillator is an important index for balancing quality of the oscillator, the temperature coefficient of an output clock of the oscillator determines deviation of frequency of the oscillator along with changes of temperature, and a lower temperature coefficient benefits improvement of stability of a system; in the design of a common oscillator with a low temperature coefficient, a temperature detection circuit is adopted, the circuit is adjusted according to the detected temperature, and accordingly the aim of reducing the temperature coefficient of the oscillator is achieved, but the temperature detection circuit needs to be additionally arranged in the structure, and accordingly power consumption and the area of the oscillator are increased. To solve the preceding problems, the invention discloses a ring oscillator with a low temperature coefficient under a lower power consumption condition. Circuits of the ring oscillator include a ring oscillation circuit and a bias circuit.
Description
Technical field
The invention belongs to integrated circuit (IC) design field, for the particularly generation of low power consumption integrated circuit clock of simulate/hybrid digital-analog integrated circuit; The structure that its bias current temperature coefficient of a kind of new oscillator of specific design and inverter trigging signal temperature coefficient compensate mutually only obtains the clock of lower temperature coefficient under traditional circuit increases the condition of several devices.
Background technology
In some circuit, clock signal is the prerequisite of circuit normal operation, and the clock signal of low-temperature coefficient is conducive to the stable of circuit performance; In numerous integrated clock circuit, the ring oscillator of RC time delay is with low-power consumption, advantage is widely applied cheaply.
Fig. 1 is a kind of low-power consumption annular oscillator compared with high PSRR that has of basis, and this ring oscillator has simple in structure, the feature of low-power consumption and high PSRR; Ring oscillation electric current is by 2k+1(k=1,2,3 ...) level an end to end inverter be formed by connecting, the input of n level inverter is connected to the output of n-1 level inverter, the output of n level inverter is connected to the inverter input of n+1, the output of last 2k+1 level inverter is connected to the input of the 1st grade of inverter, and the while is as the output of oscillator; Fig. 2 is the wherein one-level inverter of Fig. 1 ring oscillator, PMOS electric current source capsule (M
pBn) mirror image reference current source, for inverter provides constant biasing I
n, V
in_n, V
o_nbe respectively the input and output of this grade of inverter, Cn is the delay capacitor that output connects; Input V when inverter
in_nequal the trigging signal V of comparator
sw, meet expression formula [Equ.1]; As input voltage V
in_nbe less than trigging signal, PMOS switching tube (M
pKn) open, nmos switch pipe (M
nKn) close electric current I
nto capacitor C
ncharging, when capacitance voltage output voltage V namely
o_nequal the trigging signal V of inverter
sw, inverter output voltage V
o_nthrough 2k(k=0,1,2 ...) inverter of level is connected to input at the corresponding levels, makes inverter at the corresponding levels upset, PMOS switching tube (M
pKn) close, nmos switch pipe (M
nKn) open capacitor C
nelectric discharge, extremely short can ignoring of discharge time, so equal electric current I the time of delay of inverter at the corresponding levels
nby capacitance voltage V
o_nby ground voltage, be charged to turnover voltage V
swtime, time of delay t
delayexpression formula [Equ.2]; Be that the cycle T of oscillator is the cumulative of every one-level inverter time delay the time of delay of whole ring oscillator, sees [Equ.3]
[Equ.1]
[Equ.2]
[Equ.3]
From [Equ.1], [Equ.2], [Equ.3], can see, in expression formula, not contain power supply item, so the clock that this oscillator produces has good Power Supply Rejection Ratio; The mobility [mu] of NMOS pipe in [but Equ.1]
nwith threshold voltage V
tHbe all the variable with high-temperature coefficient, make the trigging signal V of inverter
swthere is high temperature coefficient, so the temperature coefficient of this oscillator is higher.
Summary of the invention
Reduce the temperature coefficient of oscillator, can effectively promote the performance of clock circuit, because the cycle T of oscillator contains mobility [mu]
nwith threshold voltage V
tHthe variable of two high-temperature coefficients, namely the trigging signal V of inverter
swthere is high temperature coefficient, make the cycle of oscillator also there is higher temperature coefficient; In order to reduce the temperature coefficient of oscillator, can increase corresponding biasing circuit and make the bias current of inverter also contain mobility [mu]
nwith threshold voltage V
tHthese two variablees; Both cancel out each other, and can obtain the oscillator of low-temperature coefficient.
Based on above-mentioned thought, the present invention, for improving the temperature stability of ring oscillator, utilizes the temperature coefficient of the temperature coefficient of bias current and the trigging signal of inverter mutually to compensate, and has proposed a kind of new ring oscillator structure, and main technology point has two aspects:
1. can produce one and comprise metal-oxide-semiconductor mobility [mu]
nwith threshold voltage V
tHthe structure of the reference current of these two variablees;
2. the structure that can mutually compensate with reference to temperature coefficient and the inverter trigging signal temperature coefficient of electric current.
Ring oscillator disclosed by the invention, based on these 2 considerations, is paid close attention to the temperature coefficient of reference current and the structure that inverter trigging signal temperature coefficient compensates mutually, and advantage of the present invention is:
1. with the device of minute quantity, produce the reference current source that an energy and inverter trigging signal compensate mutually, the power consumption of increase and circuit are seldom;
2. the temperature coefficient of reference current and inverter trigging signal temperature coefficient compensate mutually, in conjunction with the original low-power consumption of this structure and power supply stability, obtain the ring oscillator of a low-power consumption, low-temperature coefficient, high PSRR.
Accompanying drawing explanation
The ring oscillator circuit on Fig. 1 basis;
Fig. 2 inverter circuit;
Fig. 3 the present invention produces the circuit diagram of reference current;
The circuit structure of Fig. 4 low-power consumption low-temperature coefficient disclosed by the invention ring oscillator;
The temperature characterisitic simulation result of Fig. 5 basis ring oscillator;
Fig. 6 low-power consumption low-temperature coefficient disclosed by the invention ring oscillator characteristic Simulation result.
Embodiment
Below in conjunction with accompanying drawing, describe structure and the course of work of a kind of low-power consumption low-temperature coefficient ring oscillator of disclosure of the invention in detail.
A kind of low-power consumption low-temperature coefficient ring oscillator circuit disclosed by the invention consists of three parts, as shown in Figure 4, is respectively biasing circuit, inverter circuit and annular oscillation circuit.
Biasing circuit only consists of a PMOS pipe of three NMOS pipes and a resistance, as shown in Figure 3; M wherein
nB1source class ground connection, M
nB1drain and gate and M
nB2source class is connected, M
nB2drain and gate and M
nB3grid be connected, and be connected to bias current IB input, M
nB2source class be connected to one end of resistance R, the other end ground connection of resistance R, M
nB3drain electrode be connected to M
pB0drain and gate, and be connected to annular oscillation circuit as bias voltage V
pB, M
pB0source class connect power supply.
The operation principle of biasing circuit, M
nB1, M
nB2and M
nB3measure-alike, outside input bias current I
bthe M that the diode of flowing through connects
nB1and M
nB2, ignore substrate bias effect, V
nB1and V
nB2can represent with [Equ.4] and [Equ.5], suppose to flow through M
nB3electric current be I
0, V
rcan represent with [Equ.6], use I of Ohm's law
0can represent with [Equ.7], select suitable resistance R value, make I
0equal I
b, I
0can be expressed as [Equ.8], due to I
bbe the bias current providing from external circuit, can not equal I always
0, I
0to I
bdifferentiate can obtain expression formula [Equ.9], adopts the NMOS pipe that strengthens breadth length ratio, generally, that is to say I
0to I
binsensitive, can think I
0be not subject to I
bimpact; Thereby obtain the mobility [mu] with NMOS pipe
nwith threshold voltage V
tHrelevant reference current I
0.
[Equ.4]
[Equ.5]
[Equ.6]
[Equ.7]
[Equ.8]
[Equ.9]
The operation principle of inverter, every one-level inverter by 2 PMOS manage, 1 NMOS pipe and 1 electric capacity forms, as shown in Figure 2, PMOS electric current source capsule M
pBnmirror image reference current source, for inverter provides constant biasing I
n, make I
n=mI
0, PMOS switching tube M
pKn, nmos switch pipe M
nKn, M wherein
nKnwith M in biasing circuit
nB1measure-alike, V
in_n, V
o_nbe respectively the input and output of this grade of inverter, Cn is the delay capacitor that output connects; Input V when inverter
in_nequal the trigging signal V of comparator
sw, meet expression formula [Equ.10]; As input voltage V
in_nbe less than trigging signal, PMOS switching tube M
pKnunlatching, nmos switch pipe M
nKnclose electric current I
nto capacitor C
ncharging, when capacitance voltage output voltage V namely
o_nequal the trigging signal V of inverter
sw, inverter output voltage V
o_nthrough 2k(k=0,1,2 ...) inverter of level is connected to input at the corresponding levels, makes inverter at the corresponding levels upset, PMOS switching tube M
pKnclose, nmos switch pipe M
nKnopen capacitor C
nelectric discharge, extremely short can ignoring of discharge time, so equal electric current I the time of delay of inverter at the corresponding levels
nby capacitance voltage V
o_nby ground voltage, be charged to turnover voltage V
swtime, time of delay t
delayexpression formula [Equ.11]; By biasing circuit I
0expression formula [Equ.8] substitution [Equ.11], time of delay t
delayexpression formula [Equ.12], can see that from expression formula the temperature coefficient of reference current and inverter trigging signal temperature coefficient compensate mutually, and the cycle only and capacitor C
nresistance R and mirror image ratio are relevant, with the mobility [mu] of NMOS pipe
nwith threshold voltage V
tHirrelevant.
[Equ.10]
[Equ.11]
[Equ.12]
Annular oscillation circuit, by 2k+1(k=1,2,3 ...) level an end to end inverter be formed by connecting, the input of n level inverter is connected to the output of n-1 level inverter as shown in Figure 4, the output of n level inverter is connected to the inverter input of n+1, the input of last 2k+1 level inverter is connected to the input of the 1st grade of inverter, and the while is as the output of oscillator; Be that the cycle T of oscillator is the cumulative of every one-level inverter time delay the time of delay of whole ring oscillator, sees [Equ.13]; From expression formula, only can see the cycle and capacitor C
nresistance R and mirror image ratio are relevant, with the mobility [mu] of NMOS pipe
nwith threshold voltage V
tHirrelevant; Temperature coefficient and the inverter trigging signal temperature coefficient of having realized reference current compensate mutually; By choosing resistance and the electric capacity of low-temperature coefficient, can obtain the ring oscillator of low-temperature coefficient.
[Equ.13]
The actual output effect of Fig. 5 basis oscillator, the output typical frequencies that can see this oscillator in figure is 100KHz, in the range of temperature of-40 ℃ to 100 ℃, frequency change 24KHz, the temperature coefficient of oscillator output frequency is 1714ppm/ ℃.
Fig. 6 is the actual output effect of a kind of low-power consumption low-temperature coefficient ring oscillator disclosed by the invention, the output typical frequencies that can see this oscillator in figure is 100KHz, in the range of temperature of-40 ℃ to 100 ℃, frequency change is less than 2KHz, and the temperature coefficient of oscillator output frequency is 142ppm/ ℃; And overall power at 2.5uA between 3uA; Temperature coefficient is much better than basic ring oscillator circuit.
In sum, impact due to inverter trigging signal temperature coefficient, cause the output clock of ring oscillator to there is higher temperature coefficient, the invention discloses a kind of temperature coefficient of reference current and the structure that inverter trigging signal temperature coefficient compensates mutually, thereby realized a kind of structure of low-power consumption low-temperature coefficient ring oscillator.
Claims (2)
1. a circuit structure, comprising:
In ring oscillator core circuit, utilize the discharge and recharge time delay of electric current to electric capacity, but because the trigging signal of inverter varies with temperature, cause the temperature coefficient of oscillator output clock higher; Utilize the structure of this invention, the current temperature coefficient that biasing circuit provides can compensate mutually with the temperature coefficient of trigging signal, obtains the clock signal of low-temperature coefficient; Physical circuit form comprises biasing circuit, inverter circuit, three parts of annular oscillation circuit; Biasing circuit (a) by 3 NMOS manage, 1 PMOS pipe and 1 resistance forms, NMOS offset (M
nB1) source class ground connection, NMOS offset (M
nB1) grid, drain electrode and NMOS offset (M
nB2) source class be connected, NMOS offset (M
nB2) grid, drain electrode and NMOS offset (M
nB3) grid be connected and be connected to external bias current input terminal I
b, NMOS offset (M
nB3) source class be connected to one end of resistance (R), the other end ground connection of resistance (R), NMOS offset (M
nB3) drain electrode be connected to pmos bias pipe (M
pB0) drain and gate, and be connected to the bias voltage V of annular oscillation circuit inverter
pB, pmos bias pipe (M
pB0) source class connect power supply; Inverter circuit (b) is by PMOS electric current source capsule (M
pBn), PMOS switching tube (M
pKn), nmos switch pipe (M
nKn), delay capacitor (C
n) form PMOS electric current source capsule (M
pBn) source electrode connect power supply, PMOS electric current source capsule (M
pBn) grid level be connected to the bias voltage V that biasing circuit (a) provides
pB, PMOS electric current source capsule (M
pBn) drain electrode be connected to PMOS switching tube (M
pKn) source class, PMOS switching tube (M
pKn) grid be connected to nmos switch pipe (M
nKn) grid as the input V of inverter
iN_n, PMOS switching tube (M
pKn) drain electrode be connected to nmos switch pipe (M
nKn) drain electrode, and be connected to delay capacitor (C
n) one end as the output V of inverter
o_n, delay capacitor (C
n) other end ground connection or power supply, nmos switch pipe (M
nKn) source class ground connection; Ring oscillation electric current (b) is by 2k+1(k=1,2,3 ...) level an end to end inverter be formed by connecting, n level (X
n) input of inverter is connected to n-1 level (X
n-1) output of inverter, n level (X
n) output of inverter is connected to the (X of n+1
n+1) inverter input, last 2k+1 level (X
2k+1) output of inverter is connected to the 1st grade of (X
1) input of inverter, simultaneously as the output CLK of oscillator.
2. ring oscillation apparatus according to claim 1, is characterized in that utilizing the current temperature coefficient that biasing circuit provides mutually to compensate with the temperature coefficient of inverter trigging signal, obtains the clock signal of low-temperature coefficient.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410420371.5A CN104184469A (en) | 2014-08-25 | 2014-08-25 | Ring oscillator with low power consumption and low temperature coefficient |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410420371.5A CN104184469A (en) | 2014-08-25 | 2014-08-25 | Ring oscillator with low power consumption and low temperature coefficient |
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| Publication Number | Publication Date |
|---|---|
| CN104184469A true CN104184469A (en) | 2014-12-03 |
Family
ID=51965256
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|---|---|---|---|
| CN201410420371.5A Pending CN104184469A (en) | 2014-08-25 | 2014-08-25 | Ring oscillator with low power consumption and low temperature coefficient |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105071801A (en) * | 2015-08-09 | 2015-11-18 | 浙江大学 | Low-power-consumption tail current ring oscillation circuit resistant to process, voltage and temperature changes |
| CN105391429A (en) * | 2015-12-16 | 2016-03-09 | 清华大学深圳研究生院 | Ring oscillator |
| CN106209029A (en) * | 2016-06-23 | 2016-12-07 | 泰凌微电子（上海）有限公司 | Ring oscillator |
| CN106685359A (en) * | 2016-11-11 | 2017-05-17 | 合肥兆芯电子有限公司 | Clock signal generating circuit, memory storage device and clock signal generating method |
| CN107276566A (en) * | 2016-04-07 | 2017-10-20 | 中芯国际集成电路制造(上海)有限公司 | Annular oscillation circuit |
| CN107370473A (en) * | 2016-05-13 | 2017-11-21 | 中芯国际集成电路制造(上海)有限公司 | Annular oscillation circuit |
| CN107809223A (en) * | 2016-09-08 | 2018-03-16 | 恩智浦美国有限公司 | Low-temperature coefficient clock-signal generator |
| CN108718191A (en) * | 2018-08-14 | 2018-10-30 | 上海艾为电子技术股份有限公司 | A kind of pierce circuit |
| CN108964645A (en) * | 2018-09-30 | 2018-12-07 | 上海艾为电子技术股份有限公司 | delay circuit |
| CN110311627A (en) * | 2019-08-08 | 2019-10-08 | 贵州辰矽电子科技有限公司 | A kind of pierce circuit of low-power consumption output fixed frequency |
| CN110542849A (en) * | 2019-09-16 | 2019-12-06 | 广州粒子微电子有限公司 | Full MOS voltage and temperature monitoring method and circuit |
| CN109286369B (en) * | 2017-07-21 | 2020-10-09 | 珠海格力电器股份有限公司 | Voltage-controlled oscillator, integrated chip and electronic equipment |
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Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105071801A (en) * | 2015-08-09 | 2015-11-18 | 浙江大学 | Low-power-consumption tail current ring oscillation circuit resistant to process, voltage and temperature changes |
| CN105071801B (en) * | 2015-08-09 | 2017-11-17 | 浙江大学 | Anti- technique, voltage, the low-power consumption tail current type annular oscillation circuit of temperature change |
| CN105391429A (en) * | 2015-12-16 | 2016-03-09 | 清华大学深圳研究生院 | Ring oscillator |
| CN105391429B (en) * | 2015-12-16 | 2018-06-19 | 清华大学深圳研究生院 | A kind of ring oscillator |
| CN107276566A (en) * | 2016-04-07 | 2017-10-20 | 中芯国际集成电路制造(上海)有限公司 | Annular oscillation circuit |
| CN107370473A (en) * | 2016-05-13 | 2017-11-21 | 中芯国际集成电路制造(上海)有限公司 | Annular oscillation circuit |
| CN106209029B (en) * | 2016-06-23 | 2019-09-20 | 泰凌微电子（上海）有限公司 | Ring oscillator |
| CN106209029A (en) * | 2016-06-23 | 2016-12-07 | 泰凌微电子（上海）有限公司 | Ring oscillator |
| CN107809223A (en) * | 2016-09-08 | 2018-03-16 | 恩智浦美国有限公司 | Low-temperature coefficient clock-signal generator |
| CN107809223B (en) * | 2016-09-08 | 2023-06-09 | 恩智浦美国有限公司 | Low temperature coefficient clock signal generator |
| CN106685359A (en) * | 2016-11-11 | 2017-05-17 | 合肥兆芯电子有限公司 | Clock signal generating circuit, memory storage device and clock signal generating method |
| CN109286369B (en) * | 2017-07-21 | 2020-10-09 | 珠海格力电器股份有限公司 | Voltage-controlled oscillator, integrated chip and electronic equipment |
| CN108718191A (en) * | 2018-08-14 | 2018-10-30 | 上海艾为电子技术股份有限公司 | A kind of pierce circuit |
| CN108718191B (en) * | 2018-08-14 | 2023-09-19 | 上海艾为电子技术股份有限公司 | Oscillator circuit |
| CN108964645A (en) * | 2018-09-30 | 2018-12-07 | 上海艾为电子技术股份有限公司 | delay circuit |
| CN108964645B (en) * | 2018-09-30 | 2024-04-05 | 上海艾为电子技术股份有限公司 | Delay circuit |
| CN110311627A (en) * | 2019-08-08 | 2019-10-08 | 贵州辰矽电子科技有限公司 | A kind of pierce circuit of low-power consumption output fixed frequency |
| CN110542849A (en) * | 2019-09-16 | 2019-12-06 | 广州粒子微电子有限公司 | Full MOS voltage and temperature monitoring method and circuit |
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Effective date of registration: 20160601 Address after: 410205 Changsha Productivity Promotion Center, Changsha Road, Yuelu District, Hunan, 2 Applicant after: Changsha in Blx Ic Design Corp Address before: Yuelu District City, Hunan province 410205 Changsha Lu Jing Road No. 2 Changsha Productivity Promotion Center Applicant before: CHANGSHA RUIDAXING MICROELECTRONICS CO., LTD. |
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