CN109547018B - Multi-bias voltage-controlled oscillator with anti-irradiation function - Google Patents
Multi-bias voltage-controlled oscillator with anti-irradiation function Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/099—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
- H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
- H03B5/36—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device
- H03B5/364—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device the amplifier comprising field effect transistors
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Abstract
The invention relates to a multi-bias voltage-controlled oscillator with an anti-irradiation function, which comprises a plurality of bias circuits and a plurality of delay units, wherein each bias circuit is correspondingly connected with one delay unit, each delay unit is in annular connection to form an annular oscillator, and each bias circuit receives input control voltage, generates bias voltage and provides the bias voltage to the corresponding delay unit. The invention has the advantages of simple structure, low cost, irradiation resistance, low soft error rate and the like.
Description
Technical Field
The invention relates to the technical field of voltage-controlled oscillators, in particular to a multi-bias voltage-controlled oscillator with an anti-irradiation function.
Background
In order to meet the demands for higher integration, more functions and lower power consumption integrated circuits, the feature size and operating voltage of the integrated circuits are continuously shrinking, resulting in a drastic increase in the radiation sensitivity of the circuits. The voltage controlled oscillator VCO is used as an important component of an integrated circuit, the voltage controlled oscillator VCO in the prior art does not usually have an anti-radiation function, and once the output of the frequency divider is influenced by a single event effect due to the influence of radiation to cause an error, the performance of the circuit can be seriously influenced. Therefore, it is desirable to provide a voltage controlled oscillator with an anti-radiation function to improve the anti-radiation performance of the voltage controlled oscillator and reduce the soft error rate.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: aiming at the technical problems in the prior art, the invention provides the multi-bias voltage-controlled oscillator which is simple in structure, low in cost, anti-irradiation and low in soft error rate.
In order to solve the technical problems, the technical scheme provided by the invention is as follows:
a multi-bias voltage-controlled oscillator with an anti-radiation function comprises a plurality of bias circuits and a plurality of time delay units, wherein each bias circuit is correspondingly connected with one time delay unit, each time delay unit is in annular connection to form an annular oscillator, and each bias circuit receives input control voltage, generates bias voltage and provides the bias voltage for the corresponding time delay unit.
As a further improvement of the invention: the bias circuit comprises a plurality of connected switching tubes, and the input control voltage generates a pair of bias voltage outputs after passing through each switching tube.
As a further improvement of the invention: the bias circuit 1 comprises an NM1 switching tube used as an input switching tube, an NM3 switching tube used as a structure symmetric switching tube and a PM1 switching tube used for providing an active load, which are connected in sequence, wherein the gate of the NM1 switching tube receives an input control voltage, the drain of the NM1 switching tube is connected with the source of the NM3 switching tube, the drain of the NM3 switching tube is connected with the drain of the PM1 switching tube, the gate of the NM1 switching tube is connected with a first output end to output a first bias voltage VBN, and the drain of the PM1 switching tube is connected with a second output end to output a second bias voltage VBP.
As a further improvement of the invention: the delay unit comprises a first active load circuit, a positive feedback circuit, a first differential input circuit and a first tail current circuit, wherein the first active load circuit is used for providing an active load, the positive feedback circuit is used as positive feedback, the first tail current circuit and the first active load circuit are sequentially connected, the first tail current circuit and the first active load circuit are respectively connected with bias voltage provided by the bias circuit, two input ends of the first differential input circuit are respectively connected with differential input signals, and an output end of the first differential input circuit outputs a pair of output voltages.
As a further improvement of the invention: the first active load circuit comprises a PM3 switch tube, a PM4 switch tube, a PM5 switch tube and a PM6 switch tube, the directions of the PM3 switch tube and the PM4 switch tube are the same, the directions of the PM5 switch tube and the PM6 switch tube are the same, the directions of the PM3 switch tube and the PM4 switch tube are opposite to the directions of the PM5 switch tube and the PM6 switch tube, and a connection point between the PM4 switch tube and the PM5 switch tube is connected to a bias voltage output by the bias circuit.
As a further improvement of the invention: the first differential input circuit comprises a differential pair transistor formed by an NM4 switch transistor and an NM5 switch transistor, the positive feedback circuit comprises a PM7 switch transistor and a PM8 switch transistor, the PM7 switch transistor and the PM8 switch transistor are opposite in direction, and the PM7 switch transistor and the PM8 switch transistor are correspondingly connected with the NM4 switch transistor and the NM5 switch transistor respectively to realize positive feedback; the first tail current circuit comprises an NM2 switch tube, the grid electrode of the NM2 switch tube is connected to a bias voltage output by the bias circuit, and the drain electrode of the NM2 switch tube is connected with the first differential input circuit.
As a further improvement of the invention: the output end of the delay unit is also connected with an output driving circuit for providing output driving, and each output driving circuit is correspondingly connected with a bias voltage provided by one bias circuit.
As a further improvement of the invention: the delay units and the output driving circuit which are connected with each other are respectively connected to different bias circuits to form staggered connection.
As a further improvement of the invention: the output driving circuit comprises a second active load circuit, a second differential input circuit and a second tail current circuit which are sequentially connected and used for providing an active load, the second tail current circuit and the second active load circuit are respectively connected with a bias voltage provided by the bias circuit, and two input ends of the second differential input circuit are respectively connected with a differential input signal and output a pair of output signals.
As a further improvement of the invention: the second active load circuit comprises a PM36 switching tube, a PM46, a PM56 and a PM66, the PM36 switching tube and the PM66 switching tube have the same direction, the PM46 switching tube and the PM56 switching tube have the same direction, the PM36 switching tube and the PM66 switching tube and the PM46 switching tube and the PM56 switching tube have opposite directions, the second differential input circuit comprises a differential pair tube formed by an NM46 switching tube and an NM56 switching tube, the second tail current circuit comprises an NM26 switching tube, the grid of the NM26 switching tube is connected with one bias voltage output by the bias circuit, and the drain of the NM26 switching tube is connected with the second differential input circuit.
Compared with the prior art, the invention has the advantages that:
1. the invention relates to a multi-bias voltage-controlled oscillator with an anti-irradiation function, which controls a delay unit in a ring oscillator by a plurality of independently operated bias circuits, when high-energy particles hit any one of the bias circuits, because other three bias circuits are in normal working states, the working condition of only one delay unit can be influenced, and other delay units are still in normal working states, the integral frequency offset can be reduced, thereby inhibiting the single event effect of the voltage-controlled oscillator circuit caused by irradiation and reducing the soft error rate of the VCO.
2. The multi-bias voltage-controlled oscillator with the anti-irradiation function further adopts a staggered connection mode of the delay unit, the output driving circuit and the bias circuit, so that the offset of single particles does not simultaneously influence the same group of delay units and the output driving circuit, the superposition effect of the single particles on the output of the two modules is not caused, and the influence of the single particle effect on the voltage-controlled oscillator is favorably reduced.
Drawings
Fig. 1 is a schematic structural diagram of a multi-bias voltage-controlled oscillator with an irradiation-resistant function according to the embodiment.
Fig. 2 is a schematic diagram of a specific structure of the bias circuit in this embodiment.
Fig. 3 is a schematic diagram of a specific structure of the delay unit in this embodiment.
Fig. 4 is a schematic diagram of a specific structure of the output driving circuit in this embodiment.
Illustration of the drawings: 1. a bias circuit; 2. delay unit 3, output drive circuit.
Detailed Description
The invention is further described below with reference to the drawings and specific preferred embodiments of the description, without thereby limiting the scope of protection of the invention.
As shown in fig. 1, the multi-BIAS voltage-controlled oscillator with an anti-radiation function in this embodiment includes four BIAS circuits 1 (BIAS) and four delay units 2 (CELL 0 to CELL 3), each BIAS circuit 1 is correspondingly connected to one delay unit 2, each delay unit 2 is connected in a ring shape to form a ring oscillator, and each BIAS circuit 1 receives an input control voltage, generates a BIAS voltage, and provides the BIAS voltage to the corresponding delay unit 2.
The ring oscillator of the voltage-controlled oscillator VCO is composed of four differential delay units 2, each delay unit 2 is provided with one bias circuit 1, the delay units 2 in the ring oscillator are controlled by the four bias circuits 1 which run relatively independently, when high-energy particles hit any one of the bias circuits 1, the working condition of one delay unit 2 is only influenced because other three bias circuits 1 are in normal working states, and other delay units 2 are still in normal working states, so that the overall frequency offset can be reduced, the single event effect of the voltage-controlled oscillator VCO caused by irradiation is inhibited, and the soft error rate of the voltage-controlled oscillator VCO is reduced.
In this embodiment, the bias circuit 1 specifically includes a plurality of connected switching tubes, the plurality of switching tubes are connected to form a VCO bias circuit, specifically, MOS switching tubes may be used, the input control voltage generates a pair of bias voltages after passing through each MOS switching tube, and each bias circuit 1 generates a pair of bias voltages to be provided to the corresponding delay unit 2.
As shown in fig. 2, the bias circuit 1 in this embodiment includes an NM1 switching tube serving as an input switching tube, an NM3 switching tube serving as a structurally symmetric switching tube, and a PM1 switching tube for providing an active load, which are connected in sequence, a gate of the NM1 switching tube receives an input control voltage VBN, a drain of the NM1 switching tube is connected to a source of the NM3 switching tube, a drain of the NM3 switching tube is connected to a drain of the PM1 switching tube, a drain of the PM1 switching tube is connected to the gate, a source of the PM1 switching tube and a gate of the NM3 switching tube are connected to a power supply, a gate of the NM1 switching tube is connected to a first output terminal to output a first bias voltage VBN, a drain of the PM1 switching tube is connected to a second output terminal to output a second bias voltage VBP, which are a pair of bias voltages provided to the delay unit 2.
As shown in fig. 3, in this embodiment, the delay unit 2 includes a first active load circuit for providing an active load, a positive feedback circuit for serving as a positive feedback, a first differential input circuit, and a first tail current circuit, which are connected in sequence, where the first tail current circuit and the first active load circuit are respectively connected to bias voltages provided by the bias circuit 1, the first tail current circuit is connected to a first bias voltage VBN, the first active load circuit is connected to a second bias voltage VBP, two input ends of the first differential input circuit are respectively connected to differential input signals, an output end outputs a pair of output voltages (OP, ON), and the positive feedback circuit can accelerate the operating frequency of the VCO ring oscillation.
Referring to fig. 3, in this embodiment, the delay unit 2 is specifically formed by connecting a plurality of MOS switch tubes, where the first active load circuit includes a PM3 switch tube, a PM4 switch tube, a PM5 switch tube, and a PM6 switch tube, the PM3 switch tube and the PM4 switch tube have the same direction, the PM5 switch tube and the PM6 switch tube have the same direction, the PM3 switch tube and the PM4 switch tube have opposite directions to the PM5 switch tube and the PM6 switch tube, sources of the PM3 switch tube, the PM4 switch tube, the PM5 switch tube, and the PM6 switch tube are all connected to a VDDA, a drain of the PM3 switch tube is connected to a gate and a drain of the PM4 switch tube, a gate of the PM4 switch tube is connected to a gate of the PM5, a drain of the PM6 is connected to a drain of the PM5, and a connection point between the PM4 switch tube and the PM5 switch tube is connected to the bias voltage output by the bias circuit 1, that is the second bias voltage p.
IN this embodiment, the first differential input circuit includes a differential pair transistor formed by an NM4 switch transistor and an NM5 switch transistor, gates of the NM4 switch transistor and the NM5 switch transistor are respectively connected to differential input signals IN and IP, the positive feedback circuit includes a PM7 switch transistor and a PM8 switch transistor, directions of the PM7 switch transistor and the PM8 switch transistor are opposite, the PM7 switch transistor and the PM8 switch transistor are respectively connected to the NM4 switch transistor and the NM5 switch transistor to implement positive feedback, a drain of the PM7 switch transistor is connected to a drain of the switch transistor NM4, a gate of the switch transistor PM7 is connected to a drain of the switch transistor PM8 and a drain of the switch transistor NM5, and a gate of the switch transistor PM8 is connected to a drain of the switch transistor NM4 and a drain of the switch transistor PM 7.
In this embodiment, the first tail current circuit includes an NM2 switch tube, a gate of the NM2 switch tube is connected to a bias voltage output by the bias circuit 1, a drain is connected to the first differential input circuit, and a source is grounded.
In this embodiment, the output end of the delay unit 2 is further connected to an output driving circuit 3 (Buffer 0-Buffer 3) for providing output driving, and each output driving circuit is correspondingly connected to a bias voltage provided by a bias circuit 1.
In this embodiment, the delay CELLs 2 and the output driving circuits 3 connected to each other are respectively connected to different BIAS circuits to form a staggered connection, specifically, the first BIAS circuit BIAS0 is respectively connected to the first delay CELL0 and the second output driving circuit BUFFER1, the first BIAS circuit BIAS0 generates BIAS voltages VBN0 and VBP0, the BIAS voltages VBN0 and VBP0 are respectively provided to the first delay CELL0 and the second output driving circuit BUFFER1, the second BIAS circuit BIAS1 sequentially generates BIAS voltages VBN1 and VBP1, and VBN1 and VBP1 are provided to the second delay CELL1 and the third output driving circuit BUFFER2, so that the BIAS voltages are sequentially staggered connected to the delay CELLs 2 and the output driving circuits 3. By adopting a staggered connection mode for the bias voltages of the delay units 2 and the output driving circuit units 3, the offset of a single event can not simultaneously affect the same group of delay units 2 and the output driving circuit units 3, so that the superposition effect of the single event on the output effects of the two modules can not be caused, and the influence of the single event effect on the voltage-controlled oscillator can be favorably reduced.
As shown in fig. 4, in this embodiment, the output driving circuit 3 includes a second active load circuit, a second differential input circuit, and a second tail current circuit, which are connected in sequence and used for providing an active load, the second tail current circuit and the second active load circuit are respectively connected to the bias voltage provided by the bias circuit 1, and two input ends of the second differential input circuit are respectively connected to the differential input signal and output a pair of output signals. Load balancing may be provided by the output drive circuit 3 while improving output drive performance.
In this embodiment, the second active load circuit includes a PM36 switch tube, a PM46, a PM56, and a PM66, the PM36 switch tube and the PM66 switch tube have the same direction, the PM46 switch tube and the PM56 switch tube have the same direction, the PM36 switch tube and the PM66 switch tube have the opposite direction to the PM46 switch tube and the PM56 switch tube, the second differential input circuit includes a differential pair tube formed by an NM46 switch tube and an NM56 switch tube, the second tail current circuit includes an NM26 switch tube, the gate of the NM26 switch tube is connected to one bias voltage output by the bias circuit 1, and the drain of the NM26 switch tube is connected to the second differential input circuit, and the connection mode of the above circuits is substantially the same as the connection mode of the circuits in the delay unit 2, specifically as described above.
The number of the bias circuits 1, the delay units 2, and the output driving circuits 3 in the multi-bias voltage-controlled oscillator according to this embodiment may be specifically set according to actual requirements, each delay unit 2 is independently configured with one bias circuit 1 to provide a bias voltage, and the structures of each bias circuit 1, each delay unit 2, and each output driving circuit 3 may also be selected according to actual requirements.
The foregoing is considered as illustrative of the preferred embodiments of the invention and is not to be construed as limiting the invention in any way. Although the present invention has been described with reference to the preferred embodiments, it is not intended to be limited thereto. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical spirit of the present invention should fall within the protection scope of the technical scheme of the present invention, unless the technical spirit of the present invention departs from the content of the technical scheme of the present invention.
Claims (8)
1. A multi-bias voltage-controlled oscillator with an irradiation-resistant function is characterized in that: the circuit comprises a plurality of bias circuits (1) and a plurality of delay units (2), wherein each bias circuit (1) is correspondingly connected with one delay unit (2), each delay unit (2) is in annular connection to form an annular oscillator, and each bias circuit (1) receives an input control voltage, generates a bias voltage and then provides the bias voltage for the corresponding delay unit (2); the output end of each time delay unit (2) is further connected with an output driving circuit (3) used for providing output driving, each output driving circuit (3) is correspondingly connected with a bias voltage provided by one bias circuit (1), and the time delay units (2) and the output driving circuits (3) which are connected with each other are respectively connected to different bias circuits (1) to form staggered connection.
2. The multi-bias voltage-controlled oscillator with radiation-resistant function according to claim 1, characterized in that: the bias circuit (1) comprises a plurality of connected switching tubes, and the input control voltage generates a pair of bias voltage outputs after passing through each switching tube.
3. The multi-bias voltage-controlled oscillator with an irradiation-resistant function according to claim 2, characterized in that: the bias circuit (1) comprises an NM1 switch tube used as an input switch tube, an NM3 switch tube used as a structure symmetric switch tube and a PM1 switch tube used for providing an active load, which are connected in sequence, wherein the grid electrode of the NM1 switch tube receives an input control voltage, the drain electrode of the NM3 switch tube is connected with the source stage of the NM3 switch tube, the drain electrode of the NM3 switch tube is connected with the drain electrode of the PM1 switch tube, the grid electrode of the NM1 switch tube is connected with a first output end to output a first bias voltage VBN, and the drain electrode of the PM1 switch tube is connected with a second output end to output a second bias voltage VBP.
4. The multi-bias voltage-controlled oscillator with radiation-resistant function according to claim 1, 2 or 3, characterized in that: the delay unit (2) comprises a first active load circuit, a positive feedback circuit, a first differential input circuit and a first tail current circuit, wherein the first active load circuit is used for providing an active load, the positive feedback circuit is used for serving as positive feedback, the first tail current circuit and the first active load circuit are sequentially connected, the first tail current circuit and the first active load circuit are respectively connected with a bias voltage provided by the bias circuit (1), two input ends of the first differential input circuit are respectively connected with a differential input signal, and an output end outputs a pair of output voltages.
5. The multi-bias voltage-controlled oscillator with radiation-resistant function according to claim 4, characterized in that: the first active load circuit comprises a PM3 switch tube, a PM4 switch tube, a PM5 switch tube and a PM6 switch tube, the directions of the PM3 switch tube and the PM4 switch tube are the same, the directions of the PM5 switch tube and the PM6 switch tube are the same, the directions of the PM3 switch tube and the PM4 switch tube are opposite to the directions of the PM5 switch tube and the PM6 switch tube, and a connection point between the PM4 switch tube and the PM5 switch tube is connected to a bias voltage output by the bias circuit (1).
6. The multi-bias voltage-controlled oscillator with radiation-resistant function according to claim 4, characterized in that: the first differential input circuit comprises a differential pair transistor formed by an NM4 switch transistor and an NM5 switch transistor, the positive feedback circuit comprises a PM7 switch transistor and a PM8 switch transistor, the PM7 switch transistor and the PM8 switch transistor are opposite in direction, and the PM7 switch transistor and the PM8 switch transistor are respectively connected with the NM4 switch transistor and the NM5 switch transistor correspondingly to realize positive feedback; the first tail current circuit comprises an NM2 switch tube, the grid electrode of the NM2 switch tube is connected to a bias voltage output by the bias circuit (1), and the drain electrode of the NM2 switch tube is connected with the first differential input circuit.
7. The multi-bias voltage-controlled oscillator with radiation-resistant function according to claim 1, characterized in that: the output driving circuit (3) comprises a second active load circuit, a second differential input circuit and a second tail current circuit which are sequentially connected and used for providing an active load, the second tail current circuit and the second active load circuit are respectively connected with the bias voltage provided by the bias circuit (1), and two input ends of the second differential input circuit are respectively connected with a differential input signal to output a pair of output signals.
8. The multi-bias voltage-controlled oscillator with radiation-resistant function according to claim 7, characterized in that: the second active load circuit comprises PM36, PM46, PM56 and PM66 switching tubes, the PM36 switching tube and the PM66 switching tube have the same direction, the PM46 switching tube and the PM56 switching tube have the same direction, the PM36 switching tube and the PM66 switching tube have opposite directions to the PM46 switching tube and the PM56 switching tube, the second differential input circuit comprises a differential pair tube formed by an NM46 switching tube and an NM56 switching tube, the second tail current circuit comprises an NM26 switching tube, the grid of the NM26 switching tube is connected with one bias voltage output by the bias circuit (1), and the drain of the NM26 switching tube is connected with the second differential input circuit.
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| CN110146746B (en) * | 2019-05-10 | 2021-04-20 | 中国人民解放军国防科技大学 | Wide-range high-precision single-particle transient parameter testing device and method |
| CN110208608B (en) * | 2019-05-10 | 2021-05-14 | 中国人民解放军国防科技大学 | Low-power-consumption miniaturized single-particle transient parameter testing device and method |
| CN110212864A (en) * | 2019-05-10 | 2019-09-06 | 中国人民解放军国防科技大学 | High-speed differential output type voltage-controlled oscillator with low soft error rate |
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