CN113162549A - Voltage-controlled oscillator based on TSV vertical switch - Google Patents
Voltage-controlled oscillator based on TSV vertical switch Download PDFInfo
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- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims description 13
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- 101001009694 Homo sapiens G-patch domain and KOW motifs-containing protein Proteins 0.000 description 1
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- H—ELECTRICITY
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- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/1275—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator having further means for varying a parameter in dependence on the frequency
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
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- H—ELECTRICITY
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- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
- H03B5/1218—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the generator being of the balanced type
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Abstract
The invention discloses a voltage-controlled oscillator based on TSV vertical switches, which comprises a power supply VDD, wherein the power supply VDD is connected with input ends of a Wheatstone bridge inductor M1 and a Wheatstone bridge inductor M2 through conducting wires, an output end of M1 is connected with an output end of a varactor C1, a grid of a MOS4 and a drain of a MOS3, an output end of M2 is connected with an output end of the varactor C2, a grid of the MOS3 and a drain of the MOS4, input ends of the C1 and the C2 are connected with a capacitance control power supply Vctr3, a source of the MOS3 is connected with a source of the MOS4 and a drain of the MOS5 through conducting wires, a grid of the MOS5 is electrically connected with a bias power supply Vb through conducting wires, and a source of the MOS5 is grounded. According to the invention, the power consumption and delay are reduced by realizing a shorter interconnecting line through the TSV, the inductance value of the inductance circuit is adjusted by conducting or turning off the TSV vertical switch, and the frequency of the voltage-controlled oscillator is adjusted by matching with the varactor.
Description
Technical Field
The invention belongs to the technical field of three-dimensional integrated circuits, and relates to a voltage-controlled oscillator based on a TSV vertical switch.
Background
With the development of microelectronic technology, the size of microelectronic devices is continuously reduced according to moore's law, the integration level of integrated circuits is gradually increased, and the performance of electronic products is unprecedentedly improved. However, as the size of the integrated circuit is reduced to deep submicron or even nanometer level, the characteristic size of the transistor gradually reaches the physical limit, the quantum effect and the short channel effect become more and more serious, and the design, performance and reliability of the integrated circuit are seriously affected. A Voltage Controlled Oscillator (VCO), which is one of the core blocks in a radio frequency system, directly affects the performance, reliability, stability and cost of the radio frequency system. How to improve the performance becomes a main problem in designing the voltage-controlled oscillator. Due to the methods of reducing the size of the device, improving the integration level of the two-dimensional chip and the like in the traditional design, the quantum effect and the short channel effect are more and more serious after the characteristic size of the device is reduced to deep submicron or even nanometer level. The performance and reliability of the circuit are seriously affected, so that a new design idea needs to be found to solve the above problems.
Disclosure of Invention
The invention aims to provide a voltage-controlled oscillator based on a TSV vertical switch, which reduces power consumption and delay by realizing a shorter interconnecting line through the TSV, adjusts the inductance value of an inductance circuit by switching on or off the TSV vertical switch, and realizes frequency adjustment of the voltage-controlled oscillator by matching with a varactor.
The invention adopts the technical scheme that the voltage-controlled oscillator based on the TSV vertical switch comprises a power supply VDD, the power supply VDD is connected with input ends of a TSV based Wheatstone bridge inductor M1 and a TSV based Wheatstone bridge inductor M2 through leads, an output end of the TSV based Wheatstone bridge inductor M1 is connected with an output end of a varactor C1, a grid electrode of a TSV vertical switch MOS4 and a drain electrode of a TSV vertical switch MOS3 through leads, an output end of the TSV based Wheatstone bridge inductor M2 is connected with an output end of a varactor C2, a grid electrode of the TSV vertical switch MOS3 and a drain electrode of the TSV vertical switch MOS4 through leads, the input ends of the varactor C1 and the varactor C2 are connected with a capacitance control power supply Vctr3 together through leads, a source electrode of a TSV vertical switch MOS3 is connected with a source electrode of the MOS vertical switch 4 and a drain electrode of the TSV vertical switch 5 through leads, a grid electrode of a TSV vertical switch MOS5 is connected with a bias power supply Vb through leads, the source of the TSV vertical switch MOS5 is grounded.
The present invention is also characterized in that,
the TSV vertical switch MOS3, the TSV vertical switch MOS4 and the TSV vertical switch MOS5 are identical in structure and respectively comprise a P-type silicon substrate, a through hole is formed in the middle of the silicon substrate, a metal column and a dielectric layer are sequentially arranged in the through hole from inside to outside, one end of the metal column penetrates through the surface of the silicon substrate through leakage, a terminal A is arranged and serves as a grid electrode of the TSV vertical switch, n-type doped regions are arranged on one sides, close to the dielectric layer, of two ends of the through hole in the silicon substrate, metal layers extending out of the silicon substrate are arranged on end faces of the two n-type doped regions, terminals B1 and B2 are arranged on the two metal layers respectively, and the terminals B1 and B2 serve as a source electrode and a drain electrode of the TSV vertical switch respectively.
And silicon dioxide layers are also arranged on the upper end face and the lower end face of the silicon substrate.
The TSV-based wheatstone bridge inductor M1 and the TSV-based wheatstone bridge inductor M2 have the same structure, and each includes 10 TSV inductors and 1 TSV vertical switching MOS, the TSV vertical switching MOS in the TSV-based wheatstone bridge inductor M1 and the TSV-based wheatstone bridge inductor M2 are respectively denoted as MOS1 and MOS2, wherein the TSV inductor L1 has two ports a1 and b1, the TSV inductor L2 has two ports a2 and b2, the TSV inductor L2 has two ports a2 and b2, the TV inductor L2 has two ports a2 and b2, the inductor TSV L2 has two ports a2 and b2, the TSV inductor L2 has two ports a2 and b2, the TSV inductor L2 a2 and b2 are connected with the TSV inductor L2, wherein the two ports a and L2 a of the TSV inductor L2 and a2 are connected with the TSV inductor L2, a two ports of the TSV inductor 2 and a2, a two ports of the TSV inductor 2 and a2, a of the TSV inductor 2 and a2, a two ports of the TSV inductor L2 and a. A b3 port of the TSV inductor L3 is connected to a b4 port of the TSV inductor L4, a4 port of the TSV inductor L4 is connected to a5 port of the TSV inductor L5, a b5 port of the TSV inductor L5 is connected to a b5 port of the TSV inductor L5, a5 port of the TSV inductor L5 is connected to a5 port of the TSV inductor L5, a b5 port of the TSV inductor L5 is connected to a b5 port of the TSV inductor L5, a5 port of the TSV inductor L5 is connected to a5 port of the TSV inductor L5, a5 port of the TSV vertical switch MOS5 is connected to a b5 port of the TSV inductor L5, a source of the vertical switch L5 is connected to a MOS 72 port of the TSV inductor L5, and a vertical switch gate vct of the TSV inductor L5 is connected to a TSV inductor L5, wherein the TSV inductor L5 is connected to a TSV inductor L5, a vertical switch gate of the TSV inductor L5, a vertical switch is connected to a TSV inductor L5, a vertical switch for controlling the TSV inductor L5. The b5 port of the TSV inductor L5 and the b6 port of the TSV inductor L6 serve as the output terminal Lout1 of the TSV-based wheatstone bridge inductor.
The control voltages of the TSV-based wheatstone bridge inductor M1 and the TSV-based wheatstone bridge inductor M2 are Vctr1 and Vctr2, respectively:
if the control voltages Vctr1 and Vctr2 connecting the TSV vertical switch MOS1 and the TSV vertical switch MOS2 are less than the threshold voltage of the TSV vertical switch itself, the switch is turned off. At this time, the total inductance values of the TSV-based wheatstone bridge inductor M1 and the TSV-based wheatstone bridge inductor M2 are Ltot 1:
Ltot1＝[(L0-ΔL)+(L0+ΔL)]||[(L0+ΔL)+(L0-ΔL)]＝L0
L0is the equivalent inductance value from the input int to the output out.
In the above formula (L)0-. DELTA.L) equivalent to the series inductance of the TSV inductors L4 and L5, and L10 and L9, (L0+. al) is equivalent to the series inductance of TSV inductors L1 and L2 and L3 and L6 and L7 and L8.
If the control voltages Vctr1 and Vctr2 of the TSV vertical switch MOS1 and the TSV vertical switch MOS2 are greater than the threshold voltage of the TSV vertical switch itself, the switches are turned on, and at this time, the total inductance values of the TSV-based wheatstone bridge inductor M1 and the TSV-based wheatstone bridge inductor M2 are Ltot 2:
the invention has the beneficial effects that:
(1) the invention adopts the Wheatstone bridge inductor based on the TSV vertical switch, the inductance value of the inductance circuit is adjusted by switching on or off the TSV vertical switch, and the frequency of the voltage-controlled oscillator is adjusted by matching with the variable capacitor.
(2) The feedback negative resistance device in the circuit adopts the three-dimensional TSV vertical switch, so that the area and the cost of a chip are reduced, and the integration level of the chip is improved.
(3) Four arms of a wheatstone bridge in the inductor of the invention: and the three-dimensional structure is based on TSV, and compared with the traditional two-dimensional planar spiral inductor, the three-dimensional planar spiral inductor has the advantages of small occupied chip area and low loss.
(4) Compared with the traditional voltage-controlled oscillator, the invention has the advantages of small area, large tuning range, low phase noise and the like.
Drawings
Fig. 1 is an overall circuit diagram of a voltage-controlled oscillator based on TSV vertical switches according to the present invention;
FIG. 2 is a schematic structural diagram of a TSV vertical switch in a voltage controlled oscillator based on the TSV vertical switch according to the present invention;
FIG. 3 is a top view of a TSV vertical switch in a voltage controlled oscillator based on the TSV vertical switch according to the present invention;
FIG. 4 is a connection diagram of a TSV based Wheatstone bridge inductor M1 or a TSV based Wheatstone bridge inductor M2 in a TSV based vertical switch voltage-controlled oscillator according to the invention;
FIG. 5 is an equivalent circuit diagram of a Wheatstone bridge variable inductance based on TSV vertical switching in the invention.
In the figure, 1 is a metal column, 2 is a dielectric layer, 3 is a metal layer, 4 is an n-type doped region, 5 is a silicon substrate, and 6 is a silicon dioxide layer.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
The invention relates to a voltage-controlled oscillator based on TSV vertical switch, which has a structure shown in figure 1 and comprises a power supply VDD, wherein the power supply VDD is connected with input ends of a TSV based Wheatstone bridge inductor M1 and a TSV based Wheatstone bridge inductor M2 through conducting wires, an output end of a TSV based Wheatstone bridge inductor M1 is electrically connected with an output end of a varactor C1, a grid electrode of a TSV vertical switch MOS4 and a drain electrode of a TSV vertical switch MOS3 in parallel through conducting wires, an output end of the TSV based Wheatstone bridge inductor M2 is connected with an output end of a varactor C2, a grid electrode of a TSV vertical switch MOS3 and a drain electrode of a TSV vertical switch MOS4 through conducting wires, input ends of the varactor C1 and the varactor C2 are commonly connected with a capacitance control power supply Vctr3 through conducting wires, a source electrode of a MOS3 is connected with a source electrode of a TSV vertical switch 4 and a drain electrode of a TSV switch MOS5, a grid electrode of a TSV vertical switch 5 is electrically connected with a bias power supply Vb through conducting wires, the source of the TSV vertical switch MOS5 is grounded, and Vctr1 and Vctr2 in fig. 1 respectively indicate the control voltages of the two TSV vertical switch MOS1 and MOS2 in the TSV-based wheatstone bridge inductor M1 and the TSV-based wheatstone bridge inductor M2.
A voltage-controlled oscillator based on TSV vertical switches comprises five TSV vertical switches MOS1, MOS2, MOS3, MOS4, MOS5, two TSV-based Wheatstone bridge inductors M1 and M2, two variable capacitors C1 and C2, a power supply VDD, inductance control power supplies Vctr1 and Vctr2, a capacitance control power supply Vctr3 and bias voltage Vb. The TSV vertical switch MOS1 has four ports, which are a source S1, a drain D1, a gate G1, and a substrate B1, the TSV vertical switch MOS2 has four ports, which are a source S2, a drain D2, a gate G2, and a substrate B2, the TSV vertical switch MOS3 has four ports, which are a source S3, a drain D3, a gate G3, and a substrate B3, the TSV vertical switch MOS4 has four ports, which are a source S4, a drain D4, a gate G4, and a substrate B4, and the TSV vertical switch MOS5 has four ports, which are a source S5, a drain D5, a gate G5, and a substrate B5. The inductor M1 has two ports, i.e., an input terminal Lint1 and an output terminal Lout1, respectively, and the inductor M2 has two ports, i.e., an input terminal Lint2 and an output terminal Lout2, respectively. The capacitor C1 has two ports, i.e., an input terminal Cint1 and an output terminal Cout1, respectively, and the capacitor C2 has two ports, i.e., an input terminal Cint2 and an output terminal Cout2, respectively.
The connection mode is as follows:
the power supply VDD is connected to an input terminal Lint1 of an inductor M1 and an input terminal Lint2 of an inductor M2, an output terminal Lout1 of the inductor M1 is connected to an output terminal Cout1 of a varactor C1, a gate G4 of a TSV vertical switch MOS4 and a drain D3 of the TSV vertical switch MOS3, an output terminal Lout2 of an inductor M2 is connected to an output terminal Cout2 of the varactor C2, a gate G3 of the TSV vertical switch MOS3 and a drain D4 of the TSV vertical switch MOS4, an input terminal Cint1 of the inductor C1 is connected to an input terminal Cint2 of a container C2 and a capacitance control power supply Vctr3, a source S3 of the TSV vertical switch MOS3 is connected to a source S4 of the TSV vertical switch MOS4 and a drain D5 of the TSV vertical switch MOS5, a gate G5 of the TSV vertical switch MOS5 is connected to a bias power supply Vb, and a source of the TSV vertical switch MOS55 is grounded.
The structure of the TSV vertical switch MOS3, the TSV vertical switch MOS4, and the TSV vertical switch MOS5 are the same, and the structures of the TSV vertical switch MOS3, the TSV vertical switch MOS4, and the TSV vertical switch MOS5 are as shown in fig. 2-3, and each of the TSV vertical switch MOS3, the TSV vertical switch MOS4, and the TSV vertical switch MOS5 includes a P-type silicon substrate 5, a through hole is formed in the middle of the silicon substrate 5, a metal pillar 1 and a dielectric layer 2 are sequentially disposed in the through hole from inside to outside, one end of the metal pillar 1 penetrates through the surface of the silicon substrate 5 and is provided with a terminal a, the terminal a serves as a gate of the TSV vertical switch, n-type doped regions 4 are disposed on one side of the silicon substrate 5, which is located at two ends of the through hole and is close to the dielectric layer, metal layers 3 extending out of the silicon substrate 5 are disposed on end faces of the two n-type doped regions 4, terminals B1 and B2 are disposed on the two metal layers 3, and terminals B1 and B2 are respectively serving as a source and a drain of the TSV vertical switch.
The silicon substrate 5 is also provided with silicon dioxide layers 6 on the upper and lower end faces.
The TSV-based wheatstone bridge inductor M1 and the TSV-based wheatstone bridge inductor M2 have the same structure, and the structures thereof are shown in fig. 4, and each includes 10 TSV inductors and 1 TSV vertical switch MOS, the TSV vertical switch MOS in the TSV-based wheatstone bridge inductor M1 and the TSV-based wheatstone bridge inductor M2 are respectively denoted as a TSV vertical switch MOS1 and a TSV vertical switch MOS2, wherein the TSV inductor L1 has two ports a1 and b1, the TSV inductor L2 has two ports a2 and b2, the TSV inductor L3 has two ports a3 and b3, the TSV inductor L4 has two ports a4 and b4, the TV inductor L5 has two ports a5 and b5, the TSV inductor L5 has two ports a5 and b5, and the TSV inductor L5 has two ports b5 a5 and b5, wherein the TSV inductor L5 has two ports a5 and a5 are connected to the TSV 5, the a2 port of the TSV inductor L2 is connected to the a3 port of the TSV inductor L3, the b3 port of the TSV inductor L3 is connected to the b4 port of the TSV inductor L4, the a4 port of the TSV inductor L4 is connected to the a4 port of the TSV inductor L4, the b4 port of the TSV inductor L4 is connected to the b4 port of the TSV inductor L4, the a4 port of the TSV inductor L4 is connected to the MOS drain 4 of the TSV inductor L4, and the MOS drain electrode of the TSV inductor L4 is connected to the TSV vertical switch vct 4, and the TSV gate electrode of the TSV inductor L4 is connected to the TSV vertical switch. The port a1 of the TSV inductor L1 and the port a10 of the TSV inductor L10 serve as input terminals Lint1 of the TSV-based wheatstone bridge inductor, the port b5 of the TSV inductor L5 and the port b6 of the TSV inductor L6 serve as output terminals Lout1 of the TSV-based wheatstone bridge inductor, and e in fig. 4 represents a TSV vertical switch.
As shown in fig. 5, the control voltages of the TSV-based wheatstone bridge inductor M1 and the TSV-based wheatstone bridge inductor M2 are Vctr1 and Vctr2, respectively:
if the control voltages Vctr1 and Vctr2 connecting the TSV vertical switch MOS1 and the TSV vertical switch MOS2 are less than the threshold voltage of the TSV vertical switch itself, the switch is turned off, and the total inductance values of the TSV-based wheatstone bridge inductor M1 and the TSV-based wheatstone bridge inductor M2 are Ltot 1:
Ltot1＝[(L0-ΔL)+(L0+ΔL)]||[(L0+ΔL)+(L0-ΔL)]＝L0
in the above formula (L)0-. DELTA.L) equivalent to the series inductance of the TSV inductors L4 and L5, and L10 and L9, (L0+. al) equivalent to the series inductance of TSV inductors L1 and L2 and L3 and L6 and L7 and L8, L0An equivalent inductance value from the input terminal int to the output terminal out;
if: when the control voltages Vctr1 and Vctr2 of the TSV vertical switch MOS1 and the TSV vertical switch MOS2 are greater than the threshold voltage of the TSV vertical switch itself, the switches are turned on, and at this time, the total inductance values of the TSV-based wheatstone bridge inductor M1 and the TSV-based wheatstone bridge inductor M2 are Ltot 2:
the working principle of the invention is as follows: the voltage-controlled oscillator belongs to a basic LC cross-coupled voltage-controlled oscillator structure, M1 and M2 in a circuit and capacitors C1 and C2 jointly form an oscillation network, when a power supply VDD is connected, the circuit oscillates, a TSV vertical switch MOS3 and a TSV vertical switch MOS4 provide negative resistance for the circuit to counteract energy loss generated by parasitic resistance in the oscillation network, the total inductance values of the M1 and the M2 can be changed by adjusting control voltages Vctr1 and Vctr2 in inductors M1 and M2, or the working frequency of the circuit can be changed by adjusting the capacitance values of varactors C1 and C2 through the control voltage Vctr3, and therefore the function of the voltage-controlled oscillator is achieved.
The invention adopts a three-dimensional integrated circuit design based on a Through Silicon Via (TSV) technology, realizes shorter interconnection lines through the TSV to reduce power consumption and delay, realizes higher integration density through vertical stacking to ensure better electrical performance, solves the problems of high power consumption, high phase noise and the like in a voltage-controlled oscillator circuit based on the CMOS technology, and can further improve the integration level and the voltage-controlled oscillator performance.
Claims (5)
1. A voltage-controlled oscillator based on TSV vertical switch is characterized by comprising a power supply VDD, wherein the power supply VDD is electrically connected with input ends of a TSV based Wheatstone bridge inductor M1 and a TSV based Wheatstone bridge inductor M2 in parallel through leads, an output end of a TSV based Wheatstone bridge inductor M1 is electrically connected with an output end of a varactor C1, a grid electrode of a TSV vertical switch MOS4 and a drain electrode of a TSV vertical switch MOS3 in parallel through leads, an output end of a TSV based Wheatstone bridge inductor M2 is electrically connected with an output end of a MOS2, a grid electrode of the TSV vertical switch MOS3 and a drain electrode of a TSV vertical switch MOS4 in parallel through leads, input ends of the TSV C1 and the varactor C2 are connected with a capacitance control power supply Vctr3 through leads, source electrodes of the vertical switch MOS3 are connected with a source electrode of a TSV vertical switch 4 and a drain electrode of the TSV vertical switch MOS5 through leads respectively, the gate of the TSV vertical switch MOS5 is electrically connected to a bias power Vb through a wire, and the source of the TSV vertical switch MOS5 is grounded.
2. The voltage-controlled oscillator based on the TSV vertical switch as claimed in claim 1, wherein the TSV vertical switch MOS3, the TSV vertical switch MOS4 and the TSV vertical switch MOS5 are identical in structure and each comprise a P-type silicon substrate (5), a through hole is formed in the middle of each silicon substrate (5), a metal pillar (1) and a dielectric layer (2) are sequentially arranged in each through hole from inside to outside, one end of each metal pillar (1) penetrates through the surface of the through-leakage silicon substrate (5) to form a terminal A, the terminal A serves as a grid electrode of the TSV vertical switch, n-type doped regions (4) are respectively arranged on one sides, close to the dielectric layers, of two ends of each through hole in each silicon substrate (5), metal layers (3) extending out of the silicon substrate (5) are arranged on the end faces of the two n-type doped regions (4), and terminals B1 are respectively arranged on the two metal layers (3), B2, and the terminals B1 and B2 are used as the source and drain of the TSV vertical switch respectively.
3. The voltage controlled oscillator based on TSV vertical switches of claim 2, wherein the upper end face and the lower end face of the silicon substrate (5) are further provided with silicon dioxide layers (6).
4. The TSV vertical switch based voltage controlled oscillator of claim 1, wherein the TSV based Wheatstone bridge inductor M and the TSV based Wheatstone bridge inductor M are identical in structure and each include 10 TSV inductors and 1 TSV vertical switch MOS, the TSV vertical switch MOS in the TSV based Wheatstone bridge inductor M and the TSV based Wheatstone bridge inductor M are respectively denoted as TSV vertical switch MOS and TSV vertical switch MOS, wherein the TSV inductor L has two ports a and b, the TV inductor L has two ports a and b, the TSV inductor L has two ports a and b, wherein a port b1 of the TSV inductor L1 is connected to a port b2 of the TSV inductor L2, a port a2 of the TSV inductor L2 is connected to a port a3 of the TSV inductor L3, a port b3 of the TSV inductor L3 is connected to a port b3 of the TSV inductor L3, a port a3 of the TSV inductor L3 is connected to a port a3 of the TSV inductor L3, a port b3 of the TSV inductor L3 is connected to a port b3 of the TSV inductor L3, a port b3 of the TSV inductor L3 is connected to a port a drain electrode of the TSV inductor L3, and a port a drain electrode of the TSV inductor L3 is connected to a port b3 of the TSV inductor L3, a vertical switch L3 of the TSV inductor L3, a drain electrode of the TSV inductor L3 is connected to a vertical switch. The gate of the TSV vertical switch MOS1 or the TSV vertical switch MOS2 is connected to the inductance control power source Vctr1, wherein a1 port of the TSV inductance L1 and a10 port of the TSV inductance L10 are used as input terminals Lint1 of the TSV-based wheatstone bridge inductor, and a b5 port of the TSV inductance L5 and a b6 port of the TSV inductance L6 are used as output terminals Lout1 of the TSV-based wheatstone bridge inductor.
5. The voltage-controlled oscillator of claim 1, wherein voltages of the TSV based Wheatstone bridge inductor M1 and the TSV based Wheatstone bridge inductor M2 are Vctr1 and Vctr 2:
if the control voltages Vctr1 and Vctr2 connecting the TSV vertical switch MOS1 and the TSV vertical switch MOS2 are less than the threshold voltage of the TSV vertical switch itself, the switch is turned off, and the total inductance values of the TSV-based wheatstone bridge inductor M1 and the TSV-based wheatstone bridge inductor M2 are Ltot 1:
Ltot1＝[(L0-ΔL)+(L0+ΔL)]||[(L0+ΔL)+(L0-ΔL)]＝L0
the upper typeIn (L)0-. DELTA.L) equivalent to the series inductance of the TSV inductors L4 and L5, and L10 and L9, (L0+. al) equivalent to the series inductance of TSV inductors L1 and L2 and L3 and L6 and L7 and L8, L0An equivalent inductance value from the input terminal int to the output terminal out;
if the control voltages Vctr1 and Vctr2 of the TSV vertical switch MOS1 and the TSV vertical switch MOS2 are greater than the threshold voltage of the TSV vertical switch itself, the switches are turned on, and at this time, the total inductance values of the TSV-based wheatstone bridge inductor M1 and the TSV-based wheatstone bridge inductor M2 are Ltot 2:
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