CN103490819B - For circuit and the method for optical module current subsection compensation - Google Patents
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Abstract
The invention discloses a kind of circuit for optical module current subsection compensation and method, relate to optical communication field, method comprises: be connected with working power by the 3rd resistance, and circuit produces positive bias, laser conducting; The bias current of transistor seconds absorbing laser device and modulated current, damping resistance and the second capacitance modulation laser; Measure the pressure reduction of the first resistance, calculate the bias current value of laser; Measure the pressure reduction of the second resistance, calculate the modulated current value of laser; 3rd resistance and working power are disconnected, electrical laser cuts out, and under measuring tempeature, measures bias current and the modulated current of laser; In measuring tempeature section, calculate the Slop efficiency of bias current and the Slop efficiency of modulated current of laser.The present invention to the compensation stability of optical module and compensation precision all higher, not only increase stability and the precision of optical module, ensure within the scope of full temperature, the luminous power of optical module and extinction ratio stable, and not easily occur error code in communication process.
Description
Technical field
The present invention relates to optical communication field, be specifically related to a kind of circuit for optical module current subsection compensation and method.
Background technology
Along with the fast development of optical communications industry, the integration of three networks of data communication, IP communication, voice communication is accelerated, and the demand of optical module grows with each passing day.Because the applied environment of optical module becomes increasingly complex, traditional APC(Automatic Power Control, automated power controls) luminous power compensates and linear extinction cannot ensure module the stablizing of luminous power and extinction ratio within the scope of full temperature than compensating.
When traditional optical module uses, along with the change of temperature, MCU(microprocessing unit) need to compensate the utilizing emitted light power of optical module and extinction ratio, to ensure the utilizing emitted light power of optical module and the stable of extinction ratio.When regulating the utilizing emitted light power of optical module and extinction ratio, by regulating the inner LD(Laser Diode of optical module, laser diode) adjustable potentiometer of chip or non-essential resistance arrange; When the temperature is changed, the Slop efficiency of LD chip can change, and in order to keep the stable of the utilizing emitted light power of optical module, needs to compensate the bias current of optical module.Because the bias current of optical module changes, in order to maintain the stable of the transmitting extinction ratio of optical module, need to compensate the modulated current of optical module.
At present, the compensation way of the modulated current of compensating light module is generally: the compensation of temperature lookup table, k-factor, thermistor etc.; Because described compensation way is linear compensation, in a practical situation, due to otherness and the consistency of LD chip, there is part optical module in high temperature environments, the bias current of optical module and modulated current there will be nonlinear feature, and therefore, MCU there will be larger deviation by linear compensation, cause the instability of the extinction ratio of optical module, in communication process, easily occur error code.
Summary of the invention
For the defect existed in prior art, the object of the present invention is to provide a kind of circuit for optical module current subsection compensation and method, effectively can not only improve the reliability and stability of optical module, keep the extinction ratio of optical module to stablize, and not easily occur error code in communication process.
For reaching above object, the technical scheme that the present invention takes is: a kind of circuit for optical module current subsection compensation, comprise laser LD and drive circuit for laser, also comprise working power VCC, the first inductance L 1, second inductance L 2, the 3rd inductance L 3, first electric capacity C1, the second electric capacity C2, damping resistance RD, the first resistance R1, the second resistance R2, the 3rd resistance R3, the 4th resistance R4, the 5th resistance R5; Described drive circuit for laser comprises the first transistor T1 and transistor seconds T2;
The anode of laser LD is connected with working power VCC by the second inductance L 2, the negative electrode of laser LD is connected with the second electric capacity C2 by damping resistance RD, second electric capacity C2 is connected with transistor seconds T2, and the negative electrode of laser LD is connected with the first resistance R1 by the 3rd inductance L 3;
The first transistor T1 is pulled to working power VCC by the second inductance L 2, and transistor seconds T2 is pulled to working power VCC by the first inductance L 1; One end of first electric capacity C1 is connected with working power VCC, other end ground connection; The public pole of the first transistor T1 and transistor seconds T2 is by the second resistance R2 ground connection;
One end of 3rd resistance R3 is connected with the first transistor T1, and the other end is flexibly connected with working power VCC; One end of 4th resistance R4 is connected with the base stage of the first transistor T1, and the other end is connected with the base stage of transistor seconds T2; One end of 5th resistance R5 is connected with the base stage of transistor seconds T2, other end ground connection.
On the basis of such scheme, the resistance of described damping resistance RD is 5 Ω.
On the basis of such scheme, the resistance of described first resistance R1 is 10 Ω.
On the basis of such scheme, the resistance of described second resistance R2 is 10 Ω.
On the basis of such scheme, the resistance of described 3rd resistance R3 is 16K Ω.
On the basis of such scheme, the resistance of described 4th resistance R4 is 100 Ω.
On the basis of such scheme, the resistance of described 5th resistance R5 is 24K Ω.
Method for optical module current subsection compensation provided by the invention comprises the following steps:
A, be connected with working power VCC by the 3rd resistance R3, circuit produces positive bias, and operating current flow to laser LD through the first transistor T1, laser LD conducting; The bias current of transistor seconds T2 absorbing laser device LD and modulated current, damping resistance RD and the second electric capacity C2 modulated laser LD;
The bias current of B, laser LD flow to the first resistance R1, and the modulated current of laser LD flow to the second resistance R2; Measure the pressure reduction of the first resistance R1, calculate the bias current value of laser LD according to the pressure reduction of the first resistance R1; Measure the pressure reduction of the second resistance R2, calculate the modulated current value of laser LD according to the pressure reduction of the second resistance R2;
C, disconnected by the 3rd resistance R3 and working power VCC, circuit produces back bias voltage, and laser cuts out, and the bias current of laser LD and modulated current be ground connection after the second inductance L 2 and the first transistor T1 successively;
D, the power of laser LD is adjusted to-6dBm, extinction ratio is adjusted to 8dB, under measuring tempeature, measures the bias current and the modulated current that obtain laser LD; In measuring tempeature section, according to bias current and the measuring tempeature of laser LD, calculate the Slop efficiency of the bias current of laser LD; In measuring tempeature section, according to modulated current and the measuring tempeature of laser LD, calculate the Slop efficiency of the modulated current of laser LD.
On the basis of such scheme, the formula calculating the Slop efficiency of the bias current of laser LD in step D is: Px=(I1-I1 ＇)/(T-T ＇), the formula calculating the Slop efficiency of the modulated current of laser LD is: Px ＇=(I2-I2 ＇)/(T-T ＇); Wherein, T is the first temperature of laser, and T ＇ is the second temperature of laser, T > T ＇; Px is the Slop efficiency of laser, and I1 is the bias current of laser when temperature is T, and I1 ＇ is laser is the bias current of T ＇ in temperature; Px ＇ is the Slop efficiency of laser, and I2 is the modulated current of laser when temperature is T, and I2 ＇ is laser is the modulated current of T ＇ in temperature.
On the basis of such scheme, the measuring tempeature in step D is 25 DEG C, 45 DEG C, 65 DEG C and 85 DEG C, and measuring tempeature section is 25 DEG C ~ 45 DEG C, 45 DEG C ~ 65 DEG C, 65 DEG C ~ 85 DEG C.
Compared with prior art, the invention has the advantages that:
During the circuit working for optical module current subsection compensation in the present invention, the bias current under laser different temperatures and modulated current can be obtained; According to bias current and the modulation efficiency of laser, calculate the Slop efficiency of bias current and the Slop efficiency of laser modulation current of different temperatures section inner laser device, and then segmented compensation is carried out to the extinction ratio of optical module, utilizing emitted light power, bias current and modulated current, compensate stability and compensation precision all higher, not easily there is error, not only increase stability and the precision of optical module, ensure within the scope of full temperature, the luminous power of optical module and the stable of extinction ratio, and not easily there is error code in communication process.
Accompanying drawing explanation
Fig. 1 is the power current figure of laser in the embodiment of the present invention;
Fig. 2 is the circuit diagram for the circuit of optical module current subsection compensation in the embodiment of the present invention.
In figure: laser-LD, work electricity-VCC, the first inductance-L1, the second inductance-L2, the 3rd inductance-L3, the first electric capacity-C1, the second electric capacity-C2, damping resistance-RD, the first resistance-R1, the second resistance-R2, the 3rd resistance-R3, the 4th resistance-R4, the 5th resistance-R5; The first transistor-T1 and transistor seconds-T2.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in further detail.
The circuit for optical module current subsection compensation in the embodiment of the present invention and method draw under the characteristic of Study of Laser device.Shown in Figure 1, in order to understand the temperature characterisitic of laser, humid test has been done to laser, and then obtained PI(power, the electric current of laser) figure; Being explained as follows of every english abbreviation in Fig. 1:
P1: the luminous power of laser when signal is 1; P0: the luminous power of laser when signal is 0; P
aVG: average light power, P
aVG=(P1+P0)/2;
T1:25 DEG C; I
bIAS1: the bias current of laser at 25 DEG C; I
mOD1: the modulated current of laser at 25 DEG C;
T2:85 DEG C; I
bIAS2: the bias current of laser at 85 DEG C; I
mOD2: the modulated current of laser at 85 DEG C.
Shown in Figure 1, the Slop efficiency when temperature of optical module is T1, Slop efficiency when being T2 than the temperature of optical module is large, the temperature of optical module from the stage that T1 rises to T2, in order to keep the stable of the utilizing emitted light power of optical module, the bias current I of laser
bIAS1i can be increased to gradually
bIAS2.In order to keep the stable of the extinction ratio of optical module, the modulated current I of laser
mOD1i can be increased to gradually
mOD2.
The drive current (bias current and modulated current) of major part laser (linear laser) is all the linear functions with temperature correlation, when compensating linear laser, simply can adopt the mode of linear compensation; But the drive current of small part laser (non-linear laser device) is the nonlinear function with temperature correlation, when non-linear laser device is compensated, according to the mode of linear compensation, then cannot ensure in temperature ramp de, the extinction ratio of optical module stable.In order to keep the stable of the extinction ratio of optical module, compensation temperature is carried out segmentation by the present invention, obtains the Slop efficiency between each temperature section, carries out segmented compensation to each temperature section.
The circuit for optical module current subsection compensation that the embodiment of the present invention provides, comprises laser LD, drive circuit for laser, working power VCC, the first inductance L 1, second inductance L 2, the 3rd inductance L 3, first electric capacity C1, the second electric capacity C2, damping resistance RD, the first resistance R1, the second resistance R2, the 3rd resistance R3, the 4th resistance R4, the 5th resistance R5; Drive circuit for laser comprises the first transistor T1 and transistor seconds T2.The value of the first electric capacity C1 is 0.1 μ F, and the value of the second electric capacity C2 is 0.1 μ F; First inductance L 1, second inductance L 2, the 3rd inductance L 3 are 10nH; The resistance of damping resistance RD is 5 Ω, and the resistance of the first resistance R1 is 10 Ω, and the resistance of the second resistance R2 is 10 Ω, the resistance of the 3rd resistance R3 is 16K Ω, the resistance of the 4th resistance R4 is 100 Ω, the resistance of the 5th resistance R5 is 24K Ω.
The anode of laser LD is connected with working power VCC by the second inductance L 2, the negative electrode of laser LD is connected with the second electric capacity C2 by damping resistance RD by the negative electrode of damping resistance RD AC coupled transistor seconds T2(laser LD, second electric capacity C2 is connected with transistor seconds T2), the negative electrode of laser LD is connected with the first resistance R1 by the 3rd inductance L 3.The first transistor T1 is pulled to working power VCC by the second inductance L 2, and transistor seconds T2 is pulled to working power VCC by the first inductance L 1; One end of first electric capacity C1 is connected with working power VCC, other end ground connection.The public pole of the first transistor T1 and transistor seconds T2 is by the second resistance R2 ground connection.One end of 3rd resistance R3 is connected with the first transistor T1, and the other end is flexibly connected with working power VCC; One end of 4th resistance R4 is connected with the base stage of the first transistor T1, and the other end is connected with the base stage of transistor seconds T2; One end of 5th resistance R5 is connected with the base stage of transistor seconds T2, other end ground connection.
The method for optical module current subsection compensation that the embodiment of the present invention provides, comprises the following steps:
S1: be connected with working power VCC by the 3rd resistance R3, circuit produces positive bias (forcing output to be 1 level), and operating current flow to laser LD through the first transistor T1, laser LD conducting.
The bias current of S2: transistor seconds T2 absorbing laser device LD and modulated current, damping resistance RD and the second electric capacity C2 modulated laser LD.
The bias current of S3: laser LD flow to the first resistance R1, and the modulated current of laser LD flow to the second resistance R2.
S4: the pressure reduction measuring the first resistance R1, calculates the bias current value of laser LD according to the pressure reduction of the first resistance R1; Measure the pressure reduction of the second resistance R2, calculate the modulated current value of laser LD according to the pressure reduction of the second resistance R2.
S5: the 3rd resistance R3 and working power VCC is disconnected, circuit produces back bias voltage (forcing output to be 0 level), laser cuts out, and drive current (bias current of laser LD and modulated current) is ground connection after the second inductance L 2 and the first transistor T1 successively).
S6: the power of laser LD is adjusted to-6dBm, and extinction ratio is adjusted to 8dB, under measuring tempeature, measures the bias current and the modulated current that obtain laser LD; In measuring tempeature section, according to bias current and the measuring tempeature of laser LD, calculate the Slop efficiency of the bias current of laser LD; In measuring tempeature section, according to modulated current and the measuring tempeature of laser LD, calculate the Slop efficiency of the modulated current of laser LD.
See shown in table one, respectively at the temperature of 25 DEG C, 45 DEG C, 65 DEG C, 85 DEG C, calculate bias current value and the modulated current value of laser LD.According to laser LD bias current value at different temperatures and modulated current value, the Slop efficiency of bias current and the Slop efficiency of temperature section internal modulation electric current in accounting temperature section respectively.
Table one: the drive current parameter list under laser different temperatures
| 25℃ | 45℃ | 65℃ | 85℃ | |
| Bias current | 10mA | 12mA | 14mA | 16mA |
| Modulated current | 30mA | 32mA | 36mA | 42mA |
The formula calculating the Slop efficiency of the bias current in laser LD different temperatures section is:
P
x=（I1－I1＇）/（T－T＇）
Wherein, P
xfor the first temperature that the Slop efficiency of laser LD, T are laser LD, T ＇ is second temperature of laser LD, T > T ＇; I1 is the bias current of laser LD when temperature is T, and I1 ＇ is laser LD is the bias current of T ＇ in temperature.
The formula calculating the Slop efficiency of the modulated current in laser LD different temperatures section is:
P
x＇=（I2－I2＇）/（T－T＇）
Wherein, P
x＇ is the Slop efficiency of laser LD, I2 is the modulated current of laser LD when temperature is T, and I2 ＇ is laser LD is the modulated current of T ＇ in temperature.
Draw according to above formulae discovery:
In the temperature section of 25 DEG C ~ 45 DEG C, the Slop efficiency of the bias current of laser LD is 0.1, and the Slop efficiency of modulated current is 0.1;
In the temperature section of 25 DEG C ~ 65 DEG C, the Slop efficiency of the bias current of laser LD is 0.1, and the Slop efficiency of modulated current is 0.2;
In the temperature section of 65 DEG C ~ 85 DEG C, the Slop efficiency of the bias current of laser LD is 0.1, and the Slop efficiency of modulated current is 0.3.
From result of calculation, in different temperatures section, the Slop efficiency of the bias current of laser LD is different, and the Slop efficiency of the modulated current of laser LD is also different.The present invention can according to the Slop efficiency of the Slop efficiency of bias current of different temperatures section inner laser device LD and the modulated current of laser LD, segmented compensation is carried out to the extinction ratio of optical module, utilizing emitted light power, bias current and modulated current, compensate stability and compensation precision all higher, not easily there is error, improve stability and the precision of optical module.
Claims (8)
1. the circuit for optical module current subsection compensation, comprise laser LD, drive circuit for laser and working power VCC, it is characterized in that: also comprise the first inductance L 1, second inductance L 2, the 3rd inductance L 3, first electric capacity C1, the second electric capacity C2, damping resistance RD, the first resistance R1, the second resistance R2, the 3rd resistance R3, the 4th resistance R4, the 5th resistance R5; Described drive circuit for laser comprises the first transistor T1 and transistor seconds T2;
The anode of laser LD is connected with working power VCC by the second inductance L 2, the negative electrode of laser LD is connected with the second electric capacity C2 by damping resistance RD, second electric capacity C2 is connected with transistor seconds T2, and the negative electrode of laser LD is connected with the first resistance R1 by the 3rd inductance L 3;
The first transistor T1 is pulled to working power VCC by the second inductance L 2, and transistor seconds T2 is pulled to working power VCC by the first inductance L 1; One end of first electric capacity C1 is connected with working power VCC, other end ground connection; The public pole of the first transistor T1 and transistor seconds T2 is by the second resistance R2 ground connection;
One end of 3rd resistance R3 is connected with the first transistor T1, and the other end is flexibly connected with working power VCC; One end of 4th resistance R4 is connected with the base stage of the first transistor T1, and the other end is connected with the base stage of transistor seconds T2; One end of 5th resistance R5 is connected with the base stage of transistor seconds T2, other end ground connection;
The resistance of described damping resistance RD is 5 Ω;
The resistance of described first resistance R1 is 10 Ω.
2., as claimed in claim 1 for the circuit of optical module current subsection compensation, it is characterized in that: the resistance of described second resistance R2 is 10 Ω.
3., as claimed in claim 1 for the circuit of optical module current subsection compensation, it is characterized in that: the resistance of described 3rd resistance R3 is 16K Ω.
4., as claimed in claim 1 for the circuit of optical module current subsection compensation, it is characterized in that: the resistance of described 4th resistance R4 is 100 Ω.
5., as claimed in claim 1 for the circuit of optical module current subsection compensation, it is characterized in that: the resistance of described 5th resistance R5 is 24K Ω.
6., based on the method for optical module current subsection compensation of circuit described in any one of claim 1 to 5, it is characterized in that, comprise the following steps:
A, be connected with working power VCC by the 3rd resistance R3, circuit produces positive bias, and operating current flow to laser LD through the first transistor T1, laser LD conducting; The bias current of transistor seconds T2 absorbing laser device LD and modulated current, damping resistance RD and the second electric capacity C2 modulated laser LD;
The bias current of B, laser LD flow to the first resistance R1, and the modulated current of laser LD flow to the second resistance R2; Measure the pressure reduction of the first resistance R1, calculate the bias current value of laser LD according to the pressure reduction of the first resistance R1; Measure the pressure reduction of the second resistance R2, calculate the modulated current value of laser LD according to the pressure reduction of the second resistance R2;
C, disconnected by the 3rd resistance R3 and working power VCC, circuit produces back bias voltage, and laser cuts out, and the bias current of laser LD and modulated current be ground connection after the second inductance L 2 and the first transistor T1 successively;
D, the power of laser LD is adjusted to-6dBm, extinction ratio is adjusted to 8dB, under measuring tempeature, measures the bias current and the modulated current that obtain laser LD; In measuring tempeature section, according to bias current and the measuring tempeature of laser LD, calculate the Slop efficiency of the bias current of laser LD; In measuring tempeature section, according to modulated current and the measuring tempeature of laser LD, calculate the Slop efficiency of the modulated current of laser LD.
7., as claimed in claim 6 for the method for optical module current subsection compensation, it is characterized in that, the formula calculating the Slop efficiency of the bias current of laser LD in step D is: P
x=(I1-I1 ＇)/(T-T ＇), the formula calculating the Slop efficiency of the modulated current of laser LD is: P
x＇=(I2-I2 ＇)/(T-T ＇); Wherein, T is the first temperature of laser, and T ＇ is the second temperature of laser, T > T ＇; P
xfor the Slop efficiency of laser, I1 is the bias current of laser when temperature is T, and I1 ＇ is laser is the bias current of T ＇ in temperature; P
x＇ is the Slop efficiency of laser, and I2 is the modulated current of laser when temperature is T, and I2 ＇ is laser is the modulated current of T ＇ in temperature.
8., as claimed in claim 6 for the method for optical module current subsection compensation, it is characterized in that: the measuring tempeature in step D is 25 DEG C, 45 DEG C, 65 DEG C and 85 DEG C, measuring tempeature section is 25 DEG C ~ 45 DEG C, 45 DEG C ~ 65 DEG C, 65 DEG C ~ 85 DEG C.
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| CN109724775B (en) * | 2017-10-30 | 2021-03-02 | 中航海信光电技术有限公司 | Optical module open loop life compensation method and system |
| CN117233457B (en) * | 2023-11-16 | 2024-03-12 | 成都明夷电子科技有限公司 | Method and equipment for testing high-speed modulation current of laser |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101009081A (en) * | 2006-01-24 | 2007-08-01 | 三星电机株式会社 | LED driving apparatus with temperature compensation function |
| US7504610B2 (en) * | 2004-09-03 | 2009-03-17 | Mindspeed Technologies, Inc. | Optical modulation amplitude compensation system having a laser driver with modulation control signals |
| CN201846321U (en) * | 2010-11-16 | 2011-05-25 | 深圳市富满电子有限公司南山分公司 | Segmented temperature compensation reference circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US7778551B2 (en) * | 2005-04-29 | 2010-08-17 | Finisar Corporation | Temperature compensation circuits |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7504610B2 (en) * | 2004-09-03 | 2009-03-17 | Mindspeed Technologies, Inc. | Optical modulation amplitude compensation system having a laser driver with modulation control signals |
| CN101009081A (en) * | 2006-01-24 | 2007-08-01 | 三星电机株式会社 | LED driving apparatus with temperature compensation function |
| CN201846321U (en) * | 2010-11-16 | 2011-05-25 | 深圳市富满电子有限公司南山分公司 | Segmented temperature compensation reference circuit |
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