CN103809647A - Reference voltage source with high power supply rejection ratio - Google Patents
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- CN103809647A CN103809647A CN201410091879.5A CN201410091879A CN103809647A CN 103809647 A CN103809647 A CN 103809647A CN 201410091879 A CN201410091879 A CN 201410091879A CN 103809647 A CN103809647 A CN 103809647A
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Abstract
A reference voltage source with a high power supply rejection ratio is provided, wherein the reference voltage source comprises a band gap core circuit, an imprecise reference voltage source providing the high power supply rejection ratio for the band gap core circuit, a biasing circuit and a voltage proportional amplifier, wherein the voltage proportional amplifier uses the imprecise reference voltage source with the high power supply rejection ratio to generate a relatively stable voltage source with a driving capability, so as to provide power for the band gap core circuit; the band gap core circuit provides current for a triode through the amplifier and a cascade structure. The whole circuit system comprises a voltage stabilizing source 50dB with higher power supply rejection ratio and the band gap core circuit with the cascade structure. The two are combined to provide the power supply rejection ratio higher than 120dB for the reference voltage, and the stability of the circuit is improved at various temperatures and corners.
Description
Technical field
The present invention relates to microelectronic integrated circuit design field, especially a kind of reference voltage source of high PSRR.
Background technology
In a lot of analog chips and digital-to-analogue hybrid chip, all needing to use band-gap reference circuit provides accurately, stable reference voltage.But in digital-to-analogue hybrid chip because digital circuit can produce very serious high frequency noise, the Electric source coupling by band gap is to above the output reference voltage source of band gap, and then affects the performance of mimic channel.Therefore need design to there is the band-gap reference circuit of high PSRR.
The reference voltage source of existing high PSRR, the general circuit adopting as shown in Figure 1, or the circuit shown in improved Fig. 2 (biasing circuit in figure dispenses).Triode Q1 in Fig. 1 circuit, Q2 presents negative temperature coefficient.Suppose V1, V2 terminal voltage is equal, and the voltage on R1 presents good positive temperature coefficient (PTC), and is not subject to the impact of electric current and temperature, and then makes the electric current on R1 present positive temperature coefficient (PTC).By this current mirror, and be added in R2 and above Q3 with current mirror p1.So just can on R2, obtain the voltage of a positive temperature coefficient (PTC), by the stack of the negative temperature coefficient voltage on positive temperature coefficient (PTC) voltage and Q3 on R2 in circuit, and then hold the voltage that obtains a zero-temperature coefficient at OUT., this result is at hypothesis V1, under the equal prerequisite of V2, obtains.Although exist feedback to make V1 in circuit, V2 equates, does not use amplifier and do accurate comparison in circuit, exists very large offset voltage as far as possible, i.e., there is an offset voltage Vos in V1 between V2.This offset voltage can be subject to the impact of variation of flow-route and temperature larger.In fact the reference voltage obtaining is, although sort circuit can obtain higher Power Supply Rejection Ratio 90dB, larger with and larger technological temperature relevance, the consistance that makes the reference voltage obtaining below corners is not too desirable.
So there is researcher to improve the method for Fig. 1.As shown in Figure 2, circuit design n1, n2 as isolated location and comparing unit to V1, do accurate comparison with V2, and manufacture high resistant node at V5 point, make degenerative loop gain obtain sizable raising, so reduced offset voltage, further improved again Power Supply Rejection Ratio (more than can reaching 130dB).But owing to having increased high resistant node V5, simultaneously V3, and V4 is high resistant node, make low-frequency pole very close to, this method is difficult to obtain higher phase margin, at various corners and temperature, the stability of circuit has been subject to very large challenge.
Summary of the invention
In view of this, an object of the present invention is to propose a kind of high PSRR reference voltage source, to solve owing to having increased high resistant node V5, V3 simultaneously, with V4 be all high resistant node, make low-frequency pole very close to, this method is difficult to obtain higher phase margin, the unsettled problem of circuit at various corners and temperature.
For there is to a basic understanding some aspects of the embodiment disclosing, provide simple summary below.This summary part is not to comment general, neither determine key/critical component or describe the protection domain of these embodiment.Its sole purpose is to present some concepts by simple form, the preamble using this as following detailed description.
In some optional embodiments, a kind of high PSRR reference voltage source is provided, wherein, comprise band gap core circuit, be non-precise reference voltage source and the biasing circuit of described band gap core circuit power supply high PSRR, and voltage scale amplifier; Described voltage scale amplifier utilizes the non-precise reference voltage source of described high PSRR to generate stable voltage source with driving force, is described band gap core circuit power supply; Described band gap core circuit adopts amplifier and cascode structure to provide electric current to triode.
In some optional embodiments, non-precise reference voltage source and the biasing circuit of described high PSRR comprise: p1, p2, p3, p4, p5, p6, p7, p8, n1, n2, n3, n4, R10, R11, Q3, C1, wherein, p1, p2, p3, p5, the source electrode of p7 meets power vd D, the A end of capacitor C 1 and the drain electrode of p1, and the grid of p2 is connected, the grid of p1 and the grid of p3, the grid of p5, the grid of p7, the A end of R8 is connected, and the drain electrode of p3 is connected with the source electrode of p4, and the drain electrode of p5 is connected with the source electrode of p6, the grid of p4 and the grid of p6, the grid of p8, the B end of R8 is connected.The drain electrode of p2 and the drain electrode of p4, the grid of n1, the grid of n3, the A end of R9 is connected, the grid of n2 and the grid of n4, and the B end of R9 is connected, the source electrode of n4 is connected with the A of R10 end, and the source electrode of p8 is connected with the drain electrode of p7, and the drain electrode of p8 is connected with the A of R11 end, the emitter-base bandgap grading of Q3 is connected with the B of R11 end, the source electrode of n2, the other end of C1, the B end of R10, the base stage of Q3 and the collector of Q3, be connected to the ground.
In some optional embodiments, described voltage scale amplifier, comprise: p9, p10, n7, n8, n9, p13, p12, p11, n5, n6, R7, C2, R6, R5, wherein, the grid of p9 is connected with the grid of p7, the grid of p10 is connected with the grid of p8, the source electrode of p9, the source electrode of p11, the source electrode of p12, the source electrode of p13, be connected with VDD, the drain electrode of p10, the grid of n7, the grid of n8 is connected with the drain electrode of n7, the grid of n5 is connected with the A of R11 end, the source electrode of n5, the source electrode of n6 is connected with the drain electrode of n8, the drain electrode of n5, the drain electrode of p11, the grid of p13 is connected with the A of R7 end, the grid of p11, the grid of p12, the drain electrode of p12, be connected with the drain electrode of n6, the drain electrode of p13, the drain electrode of n9, the A end of R6, be connected with the right-hand member of C2, the grid of n6, the A end of R5, be connected with the B end of R6, the source of n7, the source of n8, the source of n9, the B end of R5 is connected to the ground, the source of p9, the source of p11, the source of p12, the source of p13 is connected with power vd D.
In some optional embodiments, described band gap core circuit, comprise: p14, p19, p16, p17, p18, p21, C3, n10, n11, Q1, Q2, R1, R2, R3, with common two stage amplifer A2, wherein, the source electrode of p14, the source electrode of p16, the source electrode of p17, the source electrode of p21, the source electrode of p18 is connected with the A of R6 end, the drain electrode of p14 is connected with the source electrode of p19, the grid of p14, the grid of p16, be connected with the output terminal of amplifier A2, the grid of p19, the grid of p17, the drain electrode of p17, the drain electrode of n11 is connected with the grid of p18, the drain electrode of p19, the drain electrode of p21, the A end of R1, the A end of R2, be connected with the drain electrode of p21, the B end of R1, the emitter-base bandgap grading of Q1 is connected with the negative end of amplifier A2, the B end of R2, the A end of R3 is connected with the forward end of amplifier A2, the B end of R3 is connected with the emitter of Q2, the drain electrode of p16, the drain electrode of n10, the grid of n10, be connected with the grid of n11, the A end of C3, the grid of p21, be connected with the drain electrode of p18, the base stage of Q1, the collector of Q1, the base stage of Q2, the collector of Q2, the source electrode of n10, the source electrode of n11, the B utmost point of C3 is connected to the ground.
In some optional embodiments, described band gap core circuit, p16, n10, n11, p17, p19 has formed automatic biasing cascode current and has leaked, and makes the electric current that flows through two triode branch roads be subject to the impact of supply voltage less, and then make the reference voltage that obtains more stable, p18, p21, after the start-up circuit of C3 composition makes to power on, band gap core circuit can start smoothly.
Beneficial effect: whole Circuits System has comprised one compared with the source of stable pressure 50dB of high PSRR, and a band gap core circuit with cascode structure.Both combine and can, for reference voltage provides Power Supply Rejection Ratio more than 120dB, improve the stability of circuit at various corners and temperature.
For above-mentioned and relevant object, one or more embodiment comprise below by the feature that describes in detail and particularly point out in the claims.Explanation below and accompanying drawing describe some illustrative aspects in detail, and its indication is only some modes in the utilizable variety of way of principle of each embodiment.Other benefit and novel features consider the detailed description along with below by reference to the accompanying drawings and become obviously, and the disclosed embodiments are to comprise being equal to of all these aspects and they.
figure of description
Fig. 1 is the schematic diagram of existing high PSRR band-gap circuit;
Fig. 2 is the schematic diagram of existing improved high PSRR band-gap circuit;
Fig. 3 is the schematic diagram of the high PSRR band-gap circuit that proposes of the present invention;
Fig. 4 is the simulation result of the present invention's Power Supply Rejection Ratio under various corners;
Fig. 5 is the temperature characterisitic of the reference voltage that arrive of the present invention under various corners.
Embodiment
The following description and drawings illustrate specific embodiment of the invention scheme fully, to enable those skilled in the art to put into practice them.Structure, logic, electric, process and other change that other embodiments can comprise.Embodiment only represents possible variation.Unless explicitly requested, otherwise independent parts and function are optional, and the order of operation can change.The part of some embodiments and feature can be included in or replace part and the feature of other embodiments.The scope of embodiment of the present invention comprises the gamut of claims, and all obtainable equivalent of claims.In this article, these embodiments of the present invention can be represented with term " invention " individually or always, this is only used to conveniently, and if in fact disclose the invention that exceedes, is not that the scope that will automatically limit this application is any single invention or inventive concept.
Below in conjunction with accompanying drawing, the present invention is further described in detail.
As shown in Figure 3, in some optional embodiments, provide a kind of high PSRR reference voltage source, wherein, comprising band gap core circuit, is non-precise reference voltage source and the biasing circuit of described band gap core circuit power supply high PSRR, and voltage scale amplifier; Described voltage scale amplifier utilizes the non-precise reference voltage source of described high PSRR to generate stable voltage source with driving force, is described band gap core circuit power supply; Described band gap core circuit adopts amplifier and cascode structure to provide electric current to triode, guarantees that electric current is subject to the impact of power-supply fluctuation less, and then makes reference voltage be subject to the impact of power-supply fluctuation less.
In some optional embodiments, non-precise reference voltage source and the biasing circuit of described high PSRR comprise: p1, p2, p3, p4, p5, p6, p7, p8, n1, n2, n3, n4, R10, R11, Q3, C1, wherein, p1, p2, p3, p5, the source electrode of p7 meets power vd D, the A end of capacitor C 1 and the drain electrode of p1, and the grid of p2 is connected, the grid of p1 and the grid of p3, the grid of p5, the grid of p7, the A end of R8 is connected, and the drain electrode of p3 is connected with the source electrode of p4, and the drain electrode of p5 is connected with the source electrode of p6, the grid of p4 and the grid of p6, the grid of p8, the B end of R8 is connected.The drain electrode of p2 and the drain electrode of p4, the grid of n1, the grid of n3, the A end of R9 is connected, the grid of n2 and the grid of n4, and the B end of R9 is connected, the source electrode of n4 is connected with the A of R10 end, and the source electrode of p8 is connected with the drain electrode of p7, and the drain electrode of p8 is connected with the A of R11 end, the emitter-base bandgap grading of Q3 is connected with the B of R11 end, the source electrode of n2, the other end of C1, the B end of R10, the base stage of Q3 and the collector of Q3, be connected to the ground.The non-precise reference voltage source of high PSRR, and the mentality of designing of biasing circuit is the electric current that first obtains a high PSRR.Professional and technical personnel can know, still can cause the power supply dependence of electric current in bias current circuit common and supply independent due to the channel-length modulation of mos pipe.In order to address this problem, can adopt NMOS and PMOS cascode structure in each circuit branch.In this design, use resistance to produce suitable self-bias voltage, made all metal-oxide-semiconductors all remain on saturation region.Make bias current there is Power Supply Rejection Ratio more than 50dB.There is non-linear positive temperature coefficient (PTC), this electric current is added in to the voltage that has just obtained an approximate positive temperature coefficient (PTC) on resistance by mapping.Q3 has a negative temperature coefficient.By the voltage stack of Positive and Negative Coefficient Temperature, and suitably regulate and ratio, just can obtain the voltage (all having larger non-linear because of the voltage of Positive and Negative Coefficient Temperature) of an approximate zero temperature coefficient, i.e. non-precise reference voltage source.It is 1.1 to 1.13v that experiment can obtain the deviation range of this voltage under different corners.There is the Power Supply Rejection Ratio of 50dB.
In some optional embodiments, described voltage scale amplifier, comprise: p9, p10, n7, n8, n9, p13, p12, p11, n5, n6, R7, C2, R6, R5, wherein, the grid of p9 is connected with the grid of p7, the grid of p10 is connected with the grid of p8, the source electrode of p9, the source electrode of p11, the source electrode of p12, the source electrode of p13, be connected with VDD, the drain electrode of p10, the grid of n7, the grid of n8 is connected with the drain electrode of n7, the grid of n5 is connected with the A of R11 end, the source electrode of n5, the source electrode of n6 is connected with the drain electrode of n8, the drain electrode of n5, the drain electrode of p11, the grid of p13 is connected with the A of R7 end, the grid of p11, the grid of p12, the drain electrode of p12, be connected with the drain electrode of n6, the drain electrode of p13, the drain electrode of n9, the A end of R6, be connected with the right-hand member of C2, the grid of n6, the A end of R5, be connected with the B end of R6, the source of n7, the source of n8, the source of n9, the B end of R5 is connected to the ground, the source of p9, the source of p11, the source of p12, the source of p13 is connected with power vd D.Voltage scale amplifier has adopted conventional two-stage amplifier.Consider that the electric current Main Current of output terminal of this amplifier, to band-gap circuit, can suitably reduce the breadth length ratio of n9, avoid unnecessary current drain.With produced a controlled zero point, suitably adjusting can will be positioned at the second pole cancellation of Left half-plane, even if drive larger capacitive load, operational amplifier still has good stability.
In some optional embodiments, described band gap core circuit, comprise: p14, p19, p16, p17, p18, p21, C3, n10, n11, Q1, Q2, R1, R2, R3, with common two stage amplifer A2, wherein, the source electrode of p14, the source electrode of p16, the source electrode of p17, the source electrode of p21, the source electrode of p18 is connected with the A of R6 end, the drain electrode of p14 is connected with the source electrode of p19, the grid of p14, the grid of p16, be connected with the output terminal of amplifier A2, the grid of p19, the grid of p17, the drain electrode of p17, the drain electrode of n11 is connected with the grid of p18, the drain electrode of p19, the drain electrode of p21, the A end of R1, the A end of R2, be connected with the drain electrode of p21, the B end of R1, the emitter-base bandgap grading of Q1 is connected with the negative end of amplifier A2, the B end of R2, the A end of R3 is connected with the forward end of amplifier A2, the B end of R3 is connected with the emitter of Q2, the drain electrode of p16, the drain electrode of n10, the grid of n10, be connected with the grid of n11, the A end of C3, the grid of p21, be connected with the drain electrode of p18, the base stage of Q1, the collector of Q1, the base stage of Q2, the collector of Q2, the source electrode of n10, the source electrode of n11, the B utmost point of C3 is connected to the ground.About band gap core circuit, adopt cascode structure to provide electric current for triode, p16, n10, n11, p17, for cascade pipe, p19 provides biasing, thereby makes the electric current that flows through triode be subject to the impact of power-supply fluctuation less.And then make reference voltage be subject to the impact of power-supply fluctuation less.This improvement can be reference voltage increases the Power Supply Rejection Ratio of 10dB.
In some optional embodiments, described band gap core circuit, p16, n10, n11, p17, p19 has formed automatic biasing cascode current and has leaked, and makes the electric current that flows through two triode branch roads be subject to the impact of supply voltage less, and then make the reference voltage that obtains more stable, p18, p21, after the start-up circuit of C3 composition makes to power on, band gap core circuit can start smoothly.P18, p21, c3 is the start-up circuit of band gap.After Voltage Establishment gets up, the grid that the A terminal voltage of c3 is zero, p21 is electronegative potential, then the conducting of p21 pipe, for the Vref end of band gap provides starting current.After band gap starts, p17 pipe has been set up bias voltage, makes the conducting of p18 pipe, and On current charges to noble potential to c3, subsequently the cut-off of p21 pipe.
Under SMIC40 technique, Fig. 4 has provided the simulation result of example of the present invention Power Supply Rejection Ratio under various corners.Fig. 5 has provided the temperature characterisitic of the reference voltage that example of the present invention obtains under various corners.
Those skilled in the art it is also understood that various illustrative box, module, circuit and the algorithm steps described in conjunction with embodiment herein all can be embodied as electronic hardware, computer software or its combination.For the interchangeability between hardware and software is clearly described, above various illustrative parts, frame, module, circuit and step are all carried out usually describing around its function.Be embodied as hardware or be embodied as software as for this function, depend on specific application and the design constraint that whole system is applied.Those skilled in the art can, for each application-specific, realize described function in flexible mode, still, thisly realize decision-making and should not be construed as and deviate from protection domain of the present disclosure.
Claims (6)
1. a high PSRR reference voltage source, is characterized in that,
Comprising band gap core circuit, is non-precise reference voltage source and the biasing circuit of described band gap core circuit power supply high PSRR, and voltage scale amplifier;
Described voltage scale amplifier utilizes the non-precise reference voltage source of described high PSRR to generate stable voltage source with driving force, is described band gap core circuit power supply;
Described band gap core circuit adopts amplifier and cascode structure to provide electric current to triode.
2. a kind of high PSRR reference voltage source according to claim 1, it is characterized in that, non-precise reference voltage source and the biasing circuit of described high PSRR comprise: p1, p2, p3, p4, p5, p6, p7, p8, n1, n2, n3, n4, R10, R11, Q3, C1, wherein, p1, p2, p3, p5, the source electrode of p7 meets power vd D, the A end of capacitor C 1 and the drain electrode of p1, the grid of p2 is connected, the grid of p1 and the grid of p3, the grid of p5, the grid of p7, the A end of R8 is connected, the drain electrode of p3 is connected with the source electrode of p4, the drain electrode of p5 is connected with the source electrode of p6, the grid of p4 and the grid of p6, the grid of p8, the B end of R8 is connected.
The drain electrode of 3.p2 and the drain electrode of p4, the grid of n1, the grid of n3, the A end of R9 is connected, the grid of n2 and the grid of n4, and the B end of R9 is connected, the source electrode of n4 is connected with the A of R10 end, and the source electrode of p8 is connected with the drain electrode of p7, and the drain electrode of p8 is connected with the A of R11 end, the emitter-base bandgap grading of Q3 is connected with the B of R11 end, the source electrode of n2, the other end of C1, the B end of R10, the base stage of Q3 and the collector of Q3, be connected to the ground.
4. a kind of high PSRR reference voltage source according to claim 1, it is characterized in that, described voltage scale amplifier, comprise: p9, p10, n7, n8, n9, p13, p12, p11, n5, n6, R7, C2, R6, R5, wherein, the grid of p9 is connected with the grid of p7, the grid of p10 is connected with the grid of p8, the source electrode of p9, the source electrode of p11, the source electrode of p12, the source electrode of p13, be connected with VDD, the drain electrode of p10, the grid of n7, the grid of n8 is connected with the drain electrode of n7, the grid of n5 is connected with the A of R11 end, the source electrode of n5, the source electrode of n6 is connected with the drain electrode of n8, the drain electrode of n5, the drain electrode of p11, the grid of p13 is connected with the A of R7 end, the grid of p11, the grid of p12, the drain electrode of p12, be connected with the drain electrode of n6, the drain electrode of p13, the drain electrode of n9, the A end of R6, be connected with the right-hand member of C2, the grid of n6, the A end of R5, be connected with the B end of R6, the source of n7, the source of n8, the source of n9, the B end of R5 is connected to the ground, the source of p9, the source of p11, the source of p12, the source of p13 is connected with power vd D.
5. a kind of high PSRR reference voltage source according to claim 1, it is characterized in that, described band gap core circuit, comprise: p14, p19, p16, p17, p18, p21, C3, n10, n11, Q1, Q2, R1, R2, R3, with common two stage amplifer A2, wherein, the source electrode of p14, the source electrode of p16, the source electrode of p17, the source electrode of p21, the source electrode of p18 is connected with the A of R6 end, the drain electrode of p14 is connected with the source electrode of p19, the grid of p14, the grid of p16, be connected with the output terminal of amplifier A2, the grid of p19, the grid of p17, the drain electrode of p17, the drain electrode of n11 is connected with the grid of p18, the drain electrode of p19, the drain electrode of p21, the A end of R1, the A end of R2, be connected with the drain electrode of p21, the B end of R1, the emitter-base bandgap grading of Q1 is connected with the negative end of amplifier A2, the B end of R2, the A end of R3 is connected with the forward end of amplifier A2, the B end of R3 is connected with the emitter of Q2, the drain electrode of p16, the drain electrode of n10, the grid of n10, be connected with the grid of n11, the A end of C3, the grid of p21, be connected with the drain electrode of p18, the base stage of Q1, the collector of Q1, the base stage of Q2, the collector of Q2, the source electrode of n10, the source electrode of n11, the B utmost point of C3 is connected to the ground.
6. a kind of high PSRR reference voltage source according to claim 4, is characterized in that described band gap core circuit, p16, n10, n11, p17, p19 has formed automatic biasing cascode current and has leaked, make the electric current that flows through two triode branch roads be subject to the impact of supply voltage less, and then make the reference voltage that obtains more stable, p18, p21, after the start-up circuit of C3 composition makes to power on, band gap core circuit can start smoothly.
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| CN104035479A (en) * | 2014-06-27 | 2014-09-10 | 电子科技大学 | Voltage reference with high power supply rejection ratio and low noise |
| CN105955381A (en) * | 2016-06-16 | 2016-09-21 | 电子科技大学 | Band-gap reference voltage source having high power supply rejection ratio (PSRR) characteristics |
| CN108469864A (en) * | 2018-03-30 | 2018-08-31 | 李启同 | A kind of low-temperature coefficient generating circuit from reference voltage and electronic device |
| CN108829169A (en) * | 2018-06-29 | 2018-11-16 | 成都锐成芯微科技股份有限公司 | A kind of band gap reference of high PSRR |
| CN108958348A (en) * | 2018-08-13 | 2018-12-07 | 电子科技大学 | A kind of band gap reference of high PSRR |
| CN109725675A (en) * | 2018-12-27 | 2019-05-07 | 上海华力集成电路制造有限公司 | Cascode current bias structure and current biasing circuit and SUB-BGR |
| CN110096091A (en) * | 2019-06-11 | 2019-08-06 | 上海复旦微电子集团股份有限公司 | A kind of pressure resistance subthreshold value CMOS reference source circuit |
| WO2023125250A3 (en) * | 2021-12-27 | 2023-09-21 | 唯捷创芯(天津)电子技术股份有限公司 | Overshoot-free fast start-up bandgap reference circuit, chip, and electronic device |
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| CN104035479A (en) * | 2014-06-27 | 2014-09-10 | 电子科技大学 | Voltage reference with high power supply rejection ratio and low noise |
| CN104035479B (en) * | 2014-06-27 | 2015-09-09 | 电子科技大学 | A kind of voltage-reference of high PSRR low noise |
| CN105955381A (en) * | 2016-06-16 | 2016-09-21 | 电子科技大学 | Band-gap reference voltage source having high power supply rejection ratio (PSRR) characteristics |
| CN108469864A (en) * | 2018-03-30 | 2018-08-31 | 李启同 | A kind of low-temperature coefficient generating circuit from reference voltage and electronic device |
| CN108829169A (en) * | 2018-06-29 | 2018-11-16 | 成都锐成芯微科技股份有限公司 | A kind of band gap reference of high PSRR |
| CN108958348A (en) * | 2018-08-13 | 2018-12-07 | 电子科技大学 | A kind of band gap reference of high PSRR |
| CN108958348B (en) * | 2018-08-13 | 2019-11-01 | 电子科技大学 | A kind of band gap reference of high PSRR |
| CN109725675A (en) * | 2018-12-27 | 2019-05-07 | 上海华力集成电路制造有限公司 | Cascode current bias structure and current biasing circuit and SUB-BGR |
| CN110096091A (en) * | 2019-06-11 | 2019-08-06 | 上海复旦微电子集团股份有限公司 | A kind of pressure resistance subthreshold value CMOS reference source circuit |
| WO2023125250A3 (en) * | 2021-12-27 | 2023-09-21 | 唯捷创芯(天津)电子技术股份有限公司 | Overshoot-free fast start-up bandgap reference circuit, chip, and electronic device |
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