CN109067366A - A kind of GaN power amplifier power-supplying circuit, upper power down control method - Google Patents
A kind of GaN power amplifier power-supplying circuit, upper power down control method Download PDFInfo
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- CN109067366A CN109067366A CN201810857995.1A CN201810857995A CN109067366A CN 109067366 A CN109067366 A CN 109067366A CN 201810857995 A CN201810857995 A CN 201810857995A CN 109067366 A CN109067366 A CN 109067366A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
- H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/351—Pulse width modulation being used in an amplifying circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/447—Indexing scheme relating to amplifiers the amplifier being protected to temperature influence
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Abstract
The embodiment of the present invention provides a kind of GaN power amplifier power-supplying circuit, upper power down control method, and structure is complicated for GaN power amplifier power-supplying circuit in the prior art for solving, the high technical problem of manufacturing cost.Wherein, the power-supplying circuit includes processor, gate voltage generation circuit, drain voltage switching circuit and GaN power amplifier；The processor is connected by the gate voltage generation circuit with the grid of the GaN power amplifier, is connected by the drain voltage switching circuit with the drain electrode of the GaN power amplifier；The processor is used to control the grid voltage and drain voltage of the GaN power amplifier.
Description
Technical field
The present invention relates to electronic technology field, in particular to a kind of GaN power amplifier power-supplying circuit, upper power down control
Method processed.
Background technique
With the proposition of 2025 grand blueprint of made in China, the energy become restrict one of current social development it is important because
Element, low-carbon environment-friendly become the main keynote of today's society.In the communications field of high speed development, system effectiveness height is directly determined
Energy consumption speed.GaN power amplifier is as a kind of broadband high-efficiency device, its own unique efficient broadband performance, energy
The power consumption of the reduction communication system of enough high degrees, reduces the waste of the energy, realizes low-carbon energy-saving environmental protection.
GaN power amplifier as a kind of depletion type power amplifier, when powering on must first offset gate negative pressure, to
The positive pressure of ability biased drain, has to the positive pressure for first falling drain electrode, positive pressure to be drained during power down after the negative regulation of grid
After complete power down, then fall the negative pressure of grid.Based on this special upper power-off sequential, designed reasonably for GaN power amplifier
Power-supplying circuit is most important, and reliable and stable power-supplying circuit is to guarantee GaN device normal bias and work normally
Premise.
Currently, commonplace power-supplying circuit is control GaN power amplifier using negative voltage chip upper in the industry
Power-off sequential, this negative voltage chip must have negative pressure output instruction, drain electrode controlled by the instruction and is just being compressed switch.But
This method circuit structure is complicated, and manufacturing cost is high.
Summary of the invention
The embodiment of the present invention provides a kind of GaN power amplifier power-supplying circuit, upper power down control method, for solving
Structure is complicated for GaN power amplifier power-supplying circuit in the prior art, the high technical problem of manufacturing cost.
In a first aspect, the embodiment of the present invention provides a kind of GaN power amplifier power-supplying circuit, including processor, grid
Pole tension generative circuit, drain voltage switching circuit and GaN power amplifier；
Wherein, the processor is connected by the gate voltage generation circuit with the grid of the GaN power amplifier,
It is connected by the drain voltage switching circuit with the drain electrode of the GaN power amplifier；
The processor is used to control the grid voltage and drain voltage of the GaN power amplifier.
Above-mentioned technical proposal, which designs GaN power by processor, gate voltage generation circuit, drain voltage switching circuit, puts
Big device power-supplying circuit, the control of grid voltage and drain voltage, circuit structure are realized using the processor of general low cost
Simply, manufacturing cost has been saved.
Optionally, the processor is for generating pulse-width modulation PWM signal；The gate voltage generation circuit is according to
Pwm signal generates negative voltage direct current signal, and the negative voltage direct current signal is sent to the grid of the GaN power amplifier
Pole；Wherein, the size of the duty ratio of the voltage swing and pwm signal of the negative voltage direct current signal is negatively correlated；The place
The size that reason device controls the grid voltage of the GaN power amplifier by controlling the duty ratio of the pwm signal.
By present embodiment, processor only needs to adjust the duty ratio of pwm signal, so that it may to GaN power amplifier
Gate bias voltage is adjusted, so that GaN power amplifier power-supplying circuit can be adapted for a variety of GaN power amplifiers
Occasion, be more suitable for mass production.
Optionally, the gate voltage generation circuit includes: PWM filter circuit, is connected with the processor, and basis is used for
The pwm signal generates positive voltage direct current signal；Operational amplifier circuit is connected with the PWM filter circuit, for filtering to the PWM
The positive voltage direct current signal that wave circuit generates amplifies and reverse process, generates negative voltage direct current signal, and by the negative electricity
Pressure direct current signal is sent to the grid of the GaN power amplifier.
By present embodiment, filtering, amplification and the reverse process to pwm signal may be implemented, and then to GaN power
Amplifier provides the grid voltage needed, and circuit structure is simple, and cost of implementation is low.
Optionally, the PWM filter circuit includes PWM filter module or RC circuit.
By present embodiment, the filtering processing to pwm signal may be implemented, circuit structure is simple, and cost of implementation is low.
Optionally, the operational amplifier circuit specifically includes positive conditioning amplifier, reverse isolation amplifier and positive and negative voltage source；Its
In, the positive conditioning amplifier is connected with the PWM filter circuit, the positive electricity straightening for generating to the PWM filter circuit
Stream signal amplifies processing, generates amplified positive voltage direct current signal；The reverse isolation amplifier and the positive conditioning
Amplifier is connected, and for carrying out reverse process to the amplified positive voltage direct current signal, generates negative voltage direct current signal, and will
The negative voltage direct current signal is sent to the grid of the GaN power amplifier；The positive and negative voltage source and the positive conditioning
Amplifier, the reverse isolation amplifier are respectively connected with, for powering for the positive conditioning amplifier, the reverse isolation amplifier.
By present embodiment, is realized using the double operational of a positive-negative power power supply and PWM filter circuit is generated just
The amplification of voltage DC signal and direction processing, circuit structure is simple, and cost of implementation is low；Also, double operational is also to grid voltage
It generates part and GaN power amplifier is isolated, ensured the safety of circuit.
Optionally, the drain voltage switching circuit includes that leakage compresses switch, and leaks the positive electricity being connected that compresses switch with described
Source；The processor is compressed switch by the leakage to be connected with the drain electrode of the GaN power amplifier；The processor is used for institute
It states to leak to compress switch and sends voltage signal to control the size of the GaN power amplifier drain voltage；Wherein, when the processor
It is sent to described when to leak the voltage signal that compresses switch be low logic, the leakage compresses switch conducting, and the voltage of the positive supply passes through
The leakage, which compresses switch, is biased to the drain electrode of the GaN power amplifier；When the processor is sent to the electricity for leaking and compressing switch
Described to leak the disconnection that compresses switch when pressure signal is high logic, the GaN power amplifier drain voltage is 0.
Present embodiment, being compressed switch by a positive supply and a leakage can be realized the drain electrode electricity of GaN power amplifier
The control of pressure, circuit structure is simple, and cost of implementation is low.
Optionally, the leakage specially integrated leakage that compresses switch compresses switch chip or discrete switching field effect transistor.
Present embodiment further simplifies circuit structure, reduces circuit cost of implementation.
Optionally, the processor is any one of single-chip microcontroller, dsp chip, fpga chip, ARM chip.
Present embodiment, using processor such as single-chip microcontroller, dsp chip, the programmable logic device of general low cost
Grid voltage and drain electrode electricity can be realized in (Field-Programmable Gate Array, FPGA) chip, ARM chip etc.
The control of pressure reduces the high request and particularity of negative voltage chip selection, reduces GaN power amplifier power-supplying circuit
Manufacturing cost.
Optionally, the processor is used for: when needing to power on GaN power amplifier, to the drain voltage
Switching circuit sends the voltage signal of high logic, so that the drain voltage of the GaN power amplifier is 0；By the GaN power
The grid voltage of amplifier is set as the GaN pinch-off voltage and powers on hereinafter, realizing to the grid of the GaN power amplifier；
After determining that the GaN power amplifier is enabled, the voltage signal of low logic is sent to the drain voltage switching circuit, so that
The voltage bias of positive supply in the drain voltage switching circuit is realized to the drain electrode of the GaN power amplifier to described
The drain electrode of GaN power amplifier powers on；After determining that the GaN power amplifier is not enabled, GaN folder is set by grid voltage
Power-off pressure is hereinafter, realize the protection to the GaN power amplifier；The electricity of high logic is sent to the drain voltage switching circuit
Signal is pressed, so that the drain voltage of the GaN power amplifier is 0, realizes the drain electrode power down to the GaN power amplifier；
After the complete power down of drain electrode, 0 is set by grid voltage, realizes the grid power down to the GaN power amplifier.
The upper power-off sequential of GaN power amplifier can be realized using the processor of general low cost in present embodiment
Control, circuit structure is simple, has saved manufacturing cost.
Optionally, the processor is also used to: after the completion of the drain electrode to the GaN power amplifier powers on, institute is arranged
The gate voltage values of GaN power amplifier are stated, and store the gate voltage values.
Present embodiment can carry out grid voltage setting to the GaN power amplifier in enabling, simple and effective, can fit
The grid of depletion device for free voltage range is fed, and it is wide to be applicable in scene domain.
Optionally, the processor is also used to: before the gate voltage values that the GaN power amplifier is set, according to
The temperature of pre-stored grid voltage table and the GaN power amplifier determines the gate voltage values for needing to be arranged；Wherein, institute
State gate voltage values required for being stored with the GaN power amplifier in grid voltage table at different temperatures.
By present embodiment, processor can be precisely controlled grid voltage temperature-compensating, guarantee that GaN power amplifier exists
The stabilization of performance under high and low temperature environment.
Second aspect, the embodiment of the present invention provide power down control method in a kind of GaN power amplifier, are applied to the present invention
GaN power described in any one optional embodiment is put in embodiment first aspect or first aspect of the embodiment of the present invention
Big device power-supplying circuit, which comprises
Processor sends height to the drain voltage switching circuit and patrols when needing to power on GaN power amplifier
The voltage signal collected, so that the drain voltage of the GaN power amplifier is 0；
The processor sets the GaN pinch-off voltage hereinafter, realizing for the grid voltage of the GaN power amplifier
The grid of the GaN power amplifier is powered on；
The processor is sent low after determining that the GaN power amplifier is enabled to the drain voltage switching circuit
The voltage signal of logic, so that the voltage bias of the positive supply in the drain voltage switching circuit is to the GaN power amplification
The drain electrode of device, realization power on the drain electrode of the GaN power amplifier；
The processor sets the GaN pinch off for grid voltage after determining that the GaN power amplifier is not enabled
Voltage is hereinafter, realize the protection to the GaN power amplifier；
The processor sends the voltage signal of high logic to the drain voltage switching circuit, so that the GaN power
The drain voltage of amplifier is 0, realizes the drain electrode power down to the GaN power amplifier；
After the complete power down of drain electrode, 0 is set by grid voltage, realizes the grid to the GaN power amplifier
Power down.
The upper power-off sequential of GaN power amplifier can be realized using the processor of general low cost in present embodiment
Control, circuit structure is simple, reduces the high request and particularity of negative voltage chip selection, has saved manufacturing cost.
Optionally, after the processor powers on the grid of the GaN power amplifier, further includes: the processor
The gate voltage values of the GaN power amplifier are set, and store the gate voltage values.
Present embodiment can carry out grid voltage setting to the GaN power amplifier in enabling, simple and effective, can fit
The grid of depletion device for free voltage range is fed, and it is wide to be applicable in scene domain.
Optionally, the processor is before the gate voltage values that the GaN power amplifier is arranged, further includes: according to
The temperature of pre-stored grid voltage table and the GaN power amplifier compensates slope according to grid voltage and determines the grid for needing to be arranged
Pole tension value；Wherein, grid voltage required for the GaN power amplifier is stored in the grid voltage table at different temperatures
Value.
By present embodiment, processor can be precisely controlled grid voltage temperature-compensating, guarantee that GaN power amplifier exists
The stabilization of performance under high and low temperature environment.
The third aspect, the embodiment of the present invention provide a kind of computer installation, including processor and memory；
The memory, when the processor executes described instruction, makes the meter for storing computer executed instructions
Calculation machine device executes method described in any optional embodiment of second aspect of the embodiment of the present invention or second aspect.
Fourth aspect, the embodiment of the present invention provide a kind of computer readable storage medium, the computer-readable storage medium
Matter is stored with computer instruction, when described instruction is run on computers, so that computer executes the embodiment of the present invention second
Method described in any optional embodiment of aspect or second aspect.
The one or more technical solutions provided in the embodiment of the present invention, have at least the following technical effects or advantages:
Technical solution of the embodiment of the present invention passes through processor, gate voltage generation circuit, the design of drain voltage switching circuit
GaN power amplifier power-supplying circuit realizes the control of grid voltage and drain voltage using the processor of general low cost,
Circuit structure is simple, has saved manufacturing cost.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly introduced, it should be apparent that, drawings in the following description are only some embodiments of the invention, for this
For the those of ordinary skill in field, without any creative labor, it can also be obtained according to these attached drawings
His attached drawing.
Fig. 1 is the structural schematic diagram of GaN power amplifier power-supplying circuit in the embodiment of the present invention；
Fig. 2 is the structural schematic diagram of gate voltage generation circuit 02 in the embodiment of the present invention；
Fig. 3 is the structural schematic diagram of PWM filter circuit 21 in the embodiment of the present invention；
Fig. 4 is the structural schematic diagram of operational amplifier circuit 22 in the embodiment of the present invention；
Fig. 5 is the structural schematic diagram of drain voltage switching circuit 03 in the embodiment of the present invention；
Fig. 6 be the embodiment of the present invention in leakage compress switch 31 structural schematic diagram；
Fig. 7 is the flow diagram of power down control method in GaN power amplifier in the embodiment of the present invention；
Fig. 8 is the schematic diagram of grid voltage table in the embodiment of the present invention.
Specific embodiment
Technical solution of the present invention is described in detail below by attached drawing and specific embodiment, it should be understood that the present invention
Specific features in embodiment and embodiment are the detailed description to technical solution of the present invention, rather than to the technology of the present invention
The restriction of scheme, in the absence of conflict, the technical characteristic in the embodiment of the present invention and embodiment can be combined with each other.
It is to be appreciated that in the description of the embodiment of the present invention, the vocabulary such as " first ", " second " are only used for distinguishing and retouch
The purpose stated, is not understood to indicate or imply relative importance, can not be interpreted as indication or suggestion sequence.In the present invention
In the description of embodiment " multiple ", refer to two or more.
Term "and/or" in the embodiment of the present invention, a kind of only incidence relation for describing affiliated partner, expression can be with
There are three kinds of relationships, for example, A and/or B, can indicate: individualism A exists simultaneously A and B, these three feelings of individualism B
Condition.In addition, character "/" herein, typicallys represent the relationship that forward-backward correlation object is a kind of "or".
In the prior art, as the such depletion type power amplifier of GaN power amplifier have the characteristics that it is intrinsic,
That is exactly the difference with power-off sequential on common power amplifier, depletion device power on be must first offset gate negative pressure,
After negative regulation could biased drain positive pressure, then timing is in contrast for power down, it is necessary to the positive pressure for first falling drain electrode, wait drain
The complete power down of positive pressure after, then fall the negative pressure of grid.
Based on the special upper power-off sequential of GaN power amplifier, design reasonable power-supplying circuit be it is vital,
Reliable and stable power-supplying circuit is the premise for guaranteeing GaN device normal bias and normal work.
Currently, commonplace power-supplying circuit is to guarantee that GaN power amplifier powers on by negative voltage chip in the industry
When grid negative pressure powered on before the positive pressure of drain electrode, positive pressure power down before the negative pressure of grid that when power down drains.But it is this
Control circuit has the disadvantage in that
1) circuit structure is complicated, needs specific negative voltage chip, i.e. negative voltage chip must have negative pressure output instruction, pass through
The instruction is just compressing switch to control drain electrode, but the price of this device can be relatively high, and common negative voltage chip does not have this
Indicate function；
2) this power-supplying circuit can only export fixed negative pressure, realize that any negative pressure output is relatively difficult, if
Want that changing negative pressure can only be realized by adjustable resistance partial pressure, but this mode is not easy to produce in batches, production efficiency can not mention
It is high；
3) this power-supplying circuit is due to that can only export fixed grid negative pressure, so can only be mended by the temperature of simulation
It repays to carry out the temperature-compensating of grid voltage, temperature-compensating performance is poor.
In order to solve the above technical problem of the existing technology, the embodiment of the present invention provides a kind of GaN power amplifier
Power-supplying circuit, upper power down control method.
Referring to Fig.1, which includes processor 01, gate voltage generation circuit 02, leakage
Pole tension switching circuit 03 and GaN power amplifier 04；Processor 01 is put by gate voltage generation circuit 02 and GaN power
The grid of big device 04 is connected, and is connected by drain voltage switching circuit 03 with the drain electrode of GaN power amplifier 04；Processor 01 is used
In grid (pole the G) voltage and drain electrode (pole D) voltage of control GaN power amplifier 04.
In embodiments of the present invention, the specific implementation of processor 01 can be single-chip microcontroller, Digital Signal Processing
(Digital Signal Processing, DSP) chip, FPGA (Field Programmable Gate Array) chip,
ARM (Advanced RISC Machines) chip etc., the embodiment of the present invention is not particularly limited.
In the following, controlling processor 01 specific implementation process, the control drain electrode electricity of the processor 01 of grid voltage respectively
The specific implementation process of pressure is introduced.
1, processor 01 controls the grid voltage of GaN power amplifier 04.
Fig. 2 is the structural schematic diagram of gate voltage generation circuit 02 in the embodiment of the present invention, gate voltage generation circuit 02
Specifically include PWM filter circuit 21 and operational amplifier circuit 22.PWM filter circuit 21 is connected with processor 01, and processor 01 is filtered to PWM
21 output pwm signal of wave circuit, the pwm signal that PWM filter circuit 21 is used to export processor 01 are filtered, mainly filter out
Unwanted fundamental wave and multiple harmonic frequency spectrum, leave behind positive voltage direct current signal；21 phase of operational amplifier circuit 22 and PWM filter circuit
Even, the positive voltage direct current signal for exporting to PWM filter circuit 21 amplifies and reverse process, generates negative voltage direct current letter
Number, then negative voltage direct current signal is sent to the grid of GaN power amplifier 04.
Wherein, PWM filter circuit 21 can be specifically designed by integrated PWM filter module, can also pass through letter
Single resistance capacitance RC form is designed.When using RC design, specific RC value is imitated in combination with the frequency of pwm signal
Very, if single-stage RC filter effect is insufficient, the cascade form of multistage RC can also be used, series is more, harmonic filtration
More abundant, direct current signal is cleaner.For example, Fig. 3 is the signal by the PWM filter circuit 21 of multistage discrete RC circuit design
Figure.
Wherein, the positive voltage direct current signal that PWM filter circuit 21 generates passes through positive conditioning in operational amplifier circuit 22 first
Amplifier carries out direct current conditioning, and the amplification factor of this amplifier can be 1, or other values, specific amplification factor can be according to GaN
The range of the grid voltage of power amplifier 04 determines；Since the grid required voltage of GaN power amplifier 04 is negative pressure, because
This improves the voltage after amplifier by forward direction, need to be sent into reverse isolation amplifier and reversely be amplified, which is realizing voltage
Sign change while, part is generated to grid voltage and is isolated with GaN power amplifier 04, has ensured the peace of circuit
Quan Xing.
In the specific implementation process, operational amplifier circuit 22 can specifically be realized using independent two single amplifiers, can also be adopted
It is realized with the double operational being integrated in a hardware, the embodiment of the present invention is not particularly limited.For example, Fig. 4 is to pass through one
The schematic diagram of the double operational of a positive-negative power power supply, operational amplifier circuit 22 specifically include positive conditioning amplifier 221, reverse isolation amplifier
222 and positive and negative voltage source 223, forward direction conditioning amplifier 221 is connected with PWM filter circuit 21, is used to give birth to PWM filter circuit 21
At positive voltage direct current signal amplify processing, generate amplified positive voltage direct current signal, reverse isolation amplifier 222 with just
It is connected to conditioning amplifier 221, for carrying out reverse process to amplified positive voltage direct current signal, generates negative voltage direct current letter
Number, and negative voltage direct current signal is sent to the grid of GaN power amplifier 04, positive and negative voltage source 223 and positive conditioning amplifier
221, reverse isolation amplifier 222 is respectively connected with, for powering for positive conditioning amplifier 221, reverse isolation amplifier 222.Wherein, just
Positive supply in negative supply 223 can be realized that specific voltage value is needed for improving amplifier according to forward direction by simple voltage-stabiliser tube
Voltage determine that the negative supply in positive and negative voltage source 223 can be designed by switch power module, low cost can also be passed through
Switching capacity chip design, the embodiment of the present invention is not particularly limited.In present embodiment, positive and negative voltage source 223 is not required to
Has the function of negative pressure output indication signal, as long as can stablize output negative pressure value, gate voltage generation circuit 02 can be just
Often work, reduces circuit complexity.
Based on above-mentioned gate voltage generation circuit 02, the method that processor 01 controls grid voltage is specifically as follows: passing through
The pulse width for changing 01 output pwm signal of processor is held time, i.e., in the case where the pulse period is constant, changes pulse
Duty ratio come realize negative voltage direct current signal voltage (i.e. the grid voltage of GaN power amplifier 04) adjustment.
Specifically, the pwm signal that the voltage swing of the negative voltage direct current signal of grid input is exported with processor 01 accounts for
The size of empty ratio is negatively correlated, and the duty ratio of pwm signal is bigger, by the voltage of the positive voltage direct current signal of PWM filter circuit 21
Also bigger, the negative voltage direct current signal for being sent to grid is smaller；Conversely, the duty ratio of pwm signal is smaller, by PWM filtered electrical
The voltage of the positive voltage direct current signal on road 21 is also smaller, and the negative voltage direct current signal for being sent to grid is bigger.
By this embodiment, it can be realized and the negative pressure being loaded on 04 grid of GaN power amplifier is adjusted,
It is simple and effective, it is applicable to the grid feed of the depletion device of free voltage range, it is wide to be applicable in scene domain.
2, processor 01 controls the drain voltage of GaN power amplifier 04.
Fig. 5 is the structural schematic diagram of drain voltage switching circuit 03 in the embodiment of the present invention.Drain voltage switching circuit 03
It specifically includes leakage and compresses switch and 31 and compress switch 31 positive supplies 32 being connected with leakage；Processor 01 is by leaking the 31 and GaN that compresses switch
The drain electrode of power amplifier 04 is connected；Processor 01 control to leakage compress switch 31 transmission voltage signals can control GaN power amplification
The size of 04 drain voltage of device.
Specifically, when processor 01 be sent to leakage compress switch 31 voltage signal be low logic when, leakage compresses switch 31 conductings,
The voltage of positive supply 32 is compressed switch 31 drain electrodes for being biased to GaN power amplifier 04 by leakage；When processor 01 is sent to leakage pressure
When the voltage signal of switch 31 is high logic, 31 disconnections that compress switch are leaked, 04 drain voltage of GaN power amplifier is 0.
In the specific implementation process, compress switch 31 specific implementation of leakage can compress switch chip for integrated leakage, such as
The compress switch leakage of chip, model DMN6070SSD of the leakage of model FDS6670AS compresses switch chip etc., or discrete
Switching field effect transistor, the embodiment of the present invention are not particularly limited.
Fig. 6 be the embodiment of the present invention in leakage compress switch 31 a kind of possible electrical block diagram.Leakage compresses switch 31 logical
The first triode 311, the second triode 312 and field-effect tube 313 are crossed to build, the first triode 311, the second triode 312
Using NPN type triode, field-effect tube 313 uses P-channel enhancement type FET.Wherein, the first triode 311 is used to incite somebody to action
The voltage that processor 01 exports carries out reversed.When the voltage signal that processor 01 exports is high logic, the first triode 311 is led
Logical, the voltage at node 1 is 0；Conversely, the first triode 311 is cut when the voltage signal that processor 01 exports is low logic
Only, the voltage at node 1 is that (triode is the system designed for 5V to 5V herein, is also designed to 3.3V or other electricity
Flat system, the embodiment of the present invention are not particularly limited).Second triode 312 forms a logic control with field-effect tube 313:
When voltage at node 1 is 0, the second triode 312 cut-off, the voltage of node 2 is the output voltage of positive supply (present invention reality
Example is applied by taking 50 power supply as an example), the pole G of field-effect tube 313 and S extreme pressure are reduced to zero, according to the characteristic of enhanced field-effect tube, this
When do not have conductive communication, drain current is not present, i.e. positive supply 32 will not be biased to GaN power by field-effect tube 313 and put
The drain electrode of big device 04, that is, leak 31 disconnections that compress switch；When voltage at node 1 is 5V, the conducting of the second triode 312, node 2
Voltage is the partial pressure of 312 conduction path of field-effect tube 313 and the second triode, and intrinsic standoff ratio at this time can be by changing the two or three
The resistance value of resistance between pole pipe 312 and field-effect tube 313 is realized, but to take into account the maximum gate source electricity of field-effect tube 313
Range is pressed, goes beyond the scope and field-effect tube 313 is easy to cause to puncture, after rationally intrinsic standoff ratio is set, the G and S of field-effect tube 313
Extreme pressure is reduced to negative value, according to the characteristic of enhanced field-effect tube, forms conducting channel at this time, and there are drain current, positive supplies 32
The voltage of output is biased to the drain electrode of GaN power amplifier 04 by field-effect tube 313, that is, leaks 31 closures that compress switch.
It should be noted that the type selecting of above-mentioned first triode 311, the second triode 312 and field-effect tube 313 is one
Kind reference, can be not limited to NPN triode and P-channel enhancement type FET in the specific implementation process, can also use
Other kinds of device leaks 31 disconnections that compress switch as long as meeting when the output of processor 01 is high level, the output of processor 01 is low
31 closures that compress switch are leaked when level.
Further, the realization based on above-mentioned GaN power amplifier power-supplying circuit, processor 01 can be to GaN power
Power-off sequential is controlled on amplifier 04.Referring to Fig. 7, power down control method includes: in the GaN power amplifier
S101: when needing to power on GaN power amplifier 04, processor 01 is sent out to drain voltage switching circuit 03
The voltage signal of high logic is sent, so that the drain voltage of GaN power amplifier 04 is 0, that is, leakage is disconnected and compresses switch 31；
S102: processor 01 sets GaN pinch-off voltage hereinafter, realization pair for the grid voltage of GaN power amplifier 04
The grid of the GaN power amplifier 04 powers on；
S103: after determining that GaN power amplifier 04 is enabled, processor 01 sends low patrol to drain voltage switching circuit 03
Volume voltage signal so that the voltage bias of the positive supply 32 in drain voltage switching circuit 03 is to GaN power amplifier 04
Drain electrode, i.e. closure leakage compress switch 31, and realization powers on the drain electrode of GaN power amplifier 04；
After the completion of the drain electrode to GaN power amplifier 04 powers on, GaN power amplifier can be repeatedly arranged in processor 01
04 gate voltage values, and store the gate voltage values.
S104: processor 01 sets the GaN's for grid voltage after determining that GaN power amplifier 04 is not enabled
Pinch-off voltage is hereinafter, realize the protection to the GaN power amplifier 04；
S105: processor 01 sends the voltage signal of high logic to drain voltage switching circuit 03, so that GaN power amplification
The drain voltage of device 04 is 0, that is, disconnects leakage and compress switch 31, realize the drain electrode power down to GaN power amplifier 04；
S106: after the complete power down of drain electrode of GaN power amplifier 04,0 is set by grid voltage, is realized to described
The grid power down of GaN power amplifier 04.
Further, since the grid voltage of GaN power amplifier part 04 has negative temperature coefficient, in order to guarantee system height
Reliability and consistency under low temperature, the embodiment of the present invention can also carry out temperature-compensating to grid voltage.
The analog temperature compensation of traditional diode and triode-type is small with compensation range, compensation accuracy is low, electric
The disadvantages of road consistency is not high, but the above-mentioned power-supplying circuit of the embodiment of the present invention can not need additionally to increase hardware electricity
Under the premise of road, automation grid voltage temperature-compensating is introduced.
Specifically, processor 01 is under same static conditions, in different high and low temperature environments needed for GaN power amplifier part 04
The grid voltage data wanted are acquired statistics, while calculating the corresponding relationship of grid voltage temperature and grid voltage compensation slope, raw
It is stored in processor 01 at grid voltage table.When processor 01 is after the completion of the drain electrode to GaN power amplifier 04 powers on, it is being arranged
Before the gate voltage values of GaN power amplifier 04, can be current according to the compensation slope and GaN power amplifier 04 of calculating
Temperature determines and needs the gate voltage values that are arranged, to guarantee stabilization that GaN power amplifier 04 works under different high/low temperatures.
For example, grid voltage table shown in Fig. 8 has recorded the electricity of the grid required for -40 DEG C to 80 DEG C of GaN power amplifier part 04
Pressure value.Assuming that 04 current operating temperature of GaN power amplifier is 50 DEG C, then processor can determine by calculating by grid electricity
Pressure is set as -1.86V, and then guarantees working performance of the GaN power amplifier 04 under 50 DEG C of working environments.
The one or more technical solutions provided in the embodiment of the present invention, have at least the following technical effects or advantages:
1, GaN power amplifier is designed for automatically controlled by processor, gate voltage generation circuit, drain voltage switching circuit
Circuit processed realizes the control of grid voltage and drain voltage using the processor of general low cost, and circuit structure is simple, reduces
The high request and particularity of negative voltage chip selection, reduce the manufacturing cost of GaN power amplifier power-supplying circuit；
2, the duty ratio for the pwm signal that the size of GaN power amplifier gate bias voltage is exported with processor is negatively correlated,
The embodiment of the present invention does not need the complicated procedures of forming of prior art adjustment potentiometer in the occasion for needing to adjust grid voltage, it is only necessary to
Adjust the duty ratio of pwm signal, so that it may be adjusted to the gate bias voltage of GaN power amplifier, the GaN power amplification
Device power-supplying circuit can be adapted for the occasion of a variety of GaN power amplifiers, even if the power that range of negative pressure differs greatly is put
Big device can also easily can realize the adjustment of gate voltage range not doing any circuit modification, be more suitable for batch metaplasia
It produces；
3, GaN power amplifier power-supplying circuit passes through to needed for GaN power amplifier part in different high and low temperature environments
The grid voltage data wanted are acquired statistics, formulate effective grid voltage compensation schemes, can be precisely controlled grid
Voltage temperature compensation, compared to traditional diode and triode temperature-compensation circuit, the embodiment of the present invention uses digital temperature
The mode of compensation more targetedly and accuracy, better assure that GaN power amplifier performance under high and low temperature environment
Stablize.
Based on the same inventive concept, the embodiment of the present invention also provides a kind of computer installation, including processor and memory；
The memory, when the processor executes described instruction, makes the meter for storing computer executed instructions
Calculation machine device executes the above-mentioned upper power down control method of the embodiment of the present invention.
Based on the same inventive concept, the embodiment of the present invention also provides a kind of computer readable storage medium, the computer
Readable storage medium storing program for executing is stored with computer instruction, when described instruction is run on computers, so that computer executes the present invention
The above-mentioned upper power down control method of embodiment.
It should be understood by those skilled in the art that, the embodiment of the present invention can provide as method, system or computer program
Product.Therefore, complete hardware embodiment, complete software embodiment or reality combining software and hardware aspects can be used in the present invention
Apply the form of example.Moreover, it wherein includes the computer of computer usable program code that the present invention, which can be used in one or more,
The computer program implemented in usable storage medium (including but not limited to magnetic disk storage, CD-ROM, optical memory etc.) produces
The form of product.
The present invention be referring to according to the method for the embodiment of the present invention, the process of equipment (system) and computer program product
Figure and/or block diagram describe.It should be understood that every one stream in flowchart and/or the block diagram can be realized by computer program instructions
The combination of process and/or box in journey and/or box and flowchart and/or the block diagram.It can provide these computer programs
Instruct the processor of general purpose computer, special purpose computer, Embedded Processor or other programmable data processing devices to produce
A raw machine, so that being generated by the instruction that computer or the processor of other programmable data processing devices execute for real
The device for the function of being specified in present one or more flows of the flowchart and/or one or more blocks of the block diagram.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
Mind and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (13)
1. a kind of GaN power amplifier power-supplying circuit, which is characterized in that including processor, gate voltage generation circuit, leakage
Pole tension switching circuit and GaN power amplifier；
Wherein, the processor is connected by the gate voltage generation circuit with the grid of the GaN power amplifier, is passed through
The drain voltage switching circuit is connected with the drain electrode of the GaN power amplifier；
The processor is used to control the grid voltage and drain voltage of the GaN power amplifier.
2. power-supplying circuit as described in claim 1, which is characterized in that the processor is for generating pulse-width modulation PWM
Signal；
The gate voltage generation circuit generates negative voltage direct current signal according to the pwm signal, and by the negative voltage direct current
Signal is sent to the grid of the GaN power amplifier；Wherein, the voltage swing of the negative voltage direct current signal and the PWM
The size of the duty ratio of signal is negatively correlated；
The processor by control the duty ratio of the pwm signal control the GaN power amplifier grid voltage it is big
It is small.
3. power-supplying circuit as claimed in claim 2, which is characterized in that the gate voltage generation circuit includes:
PWM filter circuit is connected with the processor, for generating positive voltage direct current signal according to the pwm signal；
Operational amplifier circuit is connected with the PWM filter circuit, the positive voltage direct current signal for generating to the PWM filter circuit
It amplifies and reverse process, generates negative voltage direct current signal, and the negative voltage direct current signal is sent to the GaN power
The grid of amplifier.
4. power-supplying circuit as claimed in claim 3, which is characterized in that the PWM filter circuit includes PWM filter module
Or resistance capacitance RC circuit.
5. power-supplying circuit as claimed in claim 3, which is characterized in that the operational amplifier circuit specifically includes positive conditioning fortune
It puts, reverse isolation amplifier and positive and negative voltage source；
Wherein, the positive conditioning amplifier is connected with the PWM filter circuit, for generating just to the PWM filter circuit
Voltage DC signal amplifies processing, generates amplified positive voltage direct current signal；
The reverse isolation amplifier is connected with the positive conditioning amplifier, be used for the amplified positive voltage direct current signal into
Row reverse process generates negative voltage direct current signal, and the negative voltage direct current signal is sent to the GaN power amplifier
Grid；
The positive and negative voltage source is respectively connected with the positive conditioning amplifier, the reverse isolation amplifier, for being the forward direction
Improve amplifier, reverse isolation amplifier power supply.
6. power-supplying circuit as described in claim 1, which is characterized in that the drain voltage switching circuit includes that leakage presses off
It closes, and leaks the positive supply being connected that compresses switch with described；The processor is compressed switch and the GaN power amplification by the leakage
The drain electrode of device is connected；
The processor, which is used to compress switch to the leakage, sends voltage signal to control the GaN power amplifier drain voltage
Size；Wherein, when it is low logic that the processor, which is sent to the voltage signal that the leakage compresses switch, the leakage, which compresses switch, to be led
Logical, the voltage of the positive supply is compressed switch by the leakage is biased to the drain electrode of the GaN power amplifier；When the processor
It is sent to described when to leak the voltage signal that compresses switch be high logic, the leakage compresses switch disconnections, and the GaN power amplifier drains
Voltage is 0.
7. power-supplying circuit as claimed in any one of claims 1 to 6, which is characterized in that the processor is used for:
When needing to power on GaN power amplifier, the voltage letter of high logic is sent to the drain voltage switching circuit
Number, so that the drain voltage of the GaN power amplifier is 0；
The GaN pinch-off voltage is set by the grid voltage of the GaN power amplifier hereinafter, realizing to the GaN power
The grid of amplifier powers on；
After determining that the GaN power amplifier is enabled, the voltage signal of low logic is sent to the drain voltage switching circuit,
So that drain electrode of the voltage bias of the positive supply in the drain voltage switching circuit to the GaN power amplifier, realization pair
The drain electrode of the GaN power amplifier powers on；
After determining that the GaN power amplifier is not enabled, the GaN pinch-off voltage is set by grid voltage hereinafter, realizing
Protection to the GaN power amplifier；
The voltage signal of high logic is sent to the drain voltage switching circuit, so that the drain electrode electricity of the GaN power amplifier
Pressure is 0, realizes the drain electrode power down to the GaN power amplifier；
After the complete power down of drain electrode, 0 is set by grid voltage, realizes the grid power down to the GaN power amplifier.
8. power-supplying circuit as claimed in claim 7, which is characterized in that the processor is also used to:
After the completion of the drain electrode to the GaN power amplifier powers on, the gate voltage values of the GaN power amplifier are set,
And store the gate voltage values.
9. power-supplying circuit as claimed in claim 8, which is characterized in that the processor is also used to:
Before the gate voltage values that the GaN power amplifier is set, grid voltage table according to the pre-stored data and the GaN function
The temperature of rate amplifier determines the gate voltage values for needing to be arranged；Wherein, the GaN power is stored in the grid voltage table to put
Big device at different temperatures required for gate voltage values.
10. power down control method in a kind of GaN power amplifier, which is characterized in that be applied to as any in claim 1-10
GaN power amplifier power-supplying circuit described in, which comprises
Processor sends high logic when needing to power on GaN power amplifier, to the drain voltage switching circuit
Voltage signal, so that the drain voltage of the GaN power amplifier is 0；
The processor sets the GaN pinch-off voltage hereinafter, realizing to institute for the grid voltage of the GaN power amplifier
The grid for stating GaN power amplifier powers on；
The processor sends low logic after determining that the GaN power amplifier is enabled, to the drain voltage switching circuit
Voltage signal so that the voltage bias of the positive supply in the drain voltage switching circuit is to the GaN power amplifier
Drain electrode, realization power on the drain electrode of the GaN power amplifier；
The processor sets the GaN pinch-off voltage for grid voltage after determining that the GaN power amplifier is not enabled
Hereinafter, realizing the protection to the GaN power amplifier；
The processor sends the voltage signal of high logic to the drain voltage switching circuit, so that the GaN power amplification
The drain voltage of device is 0, realizes the drain electrode power down to the GaN power amplifier；
After the complete power down of drain electrode, 0 is set by grid voltage, realizes the grid power down to the GaN power amplifier.
11. method as claimed in claim 10, which is characterized in that grid of the processor to the GaN power amplifier
After powering on, further includes:
The temperature of the processor grid voltage table according to the pre-stored data and the GaN power amplifier determines what needs were arranged
Gate voltage values；Wherein, the electricity of grid required for the GaN power amplifier is stored in the grid voltage table at different temperatures
Pressure value；
The gate voltage values of the GaN power amplifier are arranged in the processor, and store the gate voltage values.
12. a kind of computer installation, which is characterized in that including processor and memory；
The memory, when the processor executes described instruction, makes the computer for storing computer executed instructions
Device executes method as described in claim 10 or 11.
13. a kind of computer readable storage medium, which is characterized in that the computer-readable recording medium storage has computer to refer to
It enables, when described instruction is run on computers, so that computer executes method as described in claim 10 or 11.
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| CN111708303A (en) * | 2020-06-24 | 2020-09-25 | 电子科技大学 | Time sequence power supply device for providing multi-path variable voltage |
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| CN110098809A (en) * | 2019-05-13 | 2019-08-06 | 大唐终端技术有限公司 | A kind of gallium nitride power amplifier timing protection power supply unit |
| CN110166071B (en) * | 2019-05-24 | 2021-04-13 | 中国电子科技集团公司第三十六研究所 | Power amplifier tube drain electrode feed circuit |
| CN110166071A (en) * | 2019-05-24 | 2019-08-23 | 中国电子科技集团公司第三十六研究所 | A kind of power tube drain electrode feed circuit |
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| CN110380709B (en) * | 2019-07-12 | 2021-08-27 | 浙江大学 | High-speed grid pulse modulation circuit and radio frequency power amplifier |
| CN110380709A (en) * | 2019-07-12 | 2019-10-25 | 浙江大学 | High speed grid pulse modulation circuit and radio-frequency power amplifier |
| CN110649902A (en) * | 2019-09-29 | 2020-01-03 | 武汉虹信通信技术有限责任公司 | Power supply time sequence control circuit and method of GaN power amplifier |
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| CN111708303A (en) * | 2020-06-24 | 2020-09-25 | 电子科技大学 | Time sequence power supply device for providing multi-path variable voltage |
| CN111708303B (en) * | 2020-06-24 | 2021-08-10 | 电子科技大学 | Time sequence power supply device for providing multi-path variable voltage |
| CN112272010A (en) * | 2020-10-13 | 2021-01-26 | 广州慧智微电子有限公司 | Power control device for improving harmonic waves, power amplifier and equipment |
| CN112272010B (en) * | 2020-10-13 | 2023-03-03 | 广州慧智微电子股份有限公司 | Power control device for improving harmonic waves, power amplifier and equipment |
| CN113517868A (en) * | 2021-09-13 | 2021-10-19 | 深圳金信诺高新技术股份有限公司 | Negative voltage protection circuit |
| CN113794452A (en) * | 2021-11-15 | 2021-12-14 | 成都瑞迪威科技有限公司 | Negative voltage protection circuit of phased array radar antenna |
| CN113794452B (en) * | 2021-11-15 | 2022-02-08 | 成都瑞迪威科技有限公司 | Negative voltage protection circuit of phased array radar antenna |
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