CN205232018U - Discrete component high frequency switch gate drive circuit - Google Patents
Discrete component high frequency switch gate drive circuit Download PDFInfo
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- CN205232018U CN205232018U CN201521076691.XU CN201521076691U CN205232018U CN 205232018 U CN205232018 U CN 205232018U CN 201521076691 U CN201521076691 U CN 201521076691U CN 205232018 U CN205232018 U CN 205232018U
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Abstract
The utility model discloses a discrete component high frequency switch gate drive circuit relates to the drive circuit technical field, it includes drive signal module, level conversion module, pull -up drive module, drop -down drive module and switch tube, the drive signal module includes digital process chip or singlechip, and the drive signal module produces the PWM control signal by digital process chip or singlechip output, level conversion module connects in the drive signal module for carry out level conversion with the PWM signal, and pull -up drive module is given in output, pull -up drive module connects on level conversion module, and drop -down drive module connects in the drive signal module, and pull -up drive module, drop -down drive module are used for enlargeing of drive signal voltage and electric current, the switch tube is connected on pull -up drive module and drop -down drive module, the beneficial effects of the utility model are that: realize high frequency switch gate drive under little components and very low -cost condition, substitute gate drive IC, improved the product price / performance ratio.
Description
Technical field
The utility model relates to a kind of drive circuit, and in particular, the utility model relates to a kind of discrete component HF switch gate driver circuit.
Background technology
Along with miniaturization and the intellectuality of electronic product, digital control application of power is more and more extensive.Usually simple digitlization power supply includes computing and the control unit of DSP or single-chip microcomputer composition, and grid drive chip, the element such as switching tube and inductance forms.Digital control unit exports about 5V low pressure height internal resistance signal, directly can not be used for driving switch pipe, needs grid drive chip to change.Grid drive chip cost is higher, and small-power product sexual valence declines.
Utility model content
The purpose of this utility model is the deficiency overcoming above-mentioned technology, and provide a kind of discrete component HF switch gate driver circuit, this circuit structure is simple, cost is low, improves the cost performance of product.
The technical solution of the utility model is achieved in that a kind of discrete component HF switch gate driver circuit, and its improvements are: it comprises drive singal module, level switch module, pulling drive module, drop-down driver module and switching tube; Wherein,
Described drive singal module comprises digital processing chip or single-chip microcomputer, and described drive singal module produces the pwm control signal exported by digital processing chip or single-chip microcomputer;
Described level switch module is connected in drive singal module, for pwm signal is carried out level conversion, and exports to pulling drive module;
Described pulling drive model calling is on level switch module, and described drop-down driver module is connected in described drive singal module, and described pulling drive module, drop-down driver module are used for the amplification of drive singal voltage and current;
Described switching tube is connected on pulling drive module and described drop-down driver module.
In such a configuration, described level switch module comprises accessory power supply VCC, the 5th resistance and the 3rd field effect transistor, accessory power supply VCC is connected to the grid of the 3rd field effect transistor by the 5th resistance, and the pwm control signal pin of described digital processing chip or single-chip microcomputer is connected to the source electrode of the 3rd field effect transistor.
Further, the digital processing chip of described drive singal module or single-chip microcomputer have auxiliary power interface, described accessory power supply VCC is connected to auxiliary power interface.
Further, described pulling drive module comprises the first triode, the second resistance, the 4th resistance, the 6th resistance and drives the accessory power supply of described switching tube, the source electrode of described 3rd field effect transistor is connected to the base stage of the first triode by the 6th resistance, described accessory power supply one tunnel is connected to the emitter of the first triode, the 4th resistance of separately leading up to is connected to the base stage of the first triode, and the collector electrode of the first triode exports pulling drive signal by the second resistance.
Further, the voltage of the accessory power supply of described driving switch pipe is 12V.
Further, between described level switch module and pulling drive module, be provided with the second diode, and the second diode is arranged between the 6th resistance and the 3rd field effect transistor.
In above-mentioned structure, described drop-down driver module comprises the 4th field effect transistor, the 7th resistance and the 8th resistance, the pwm control signal pin of described digital processing chip or single-chip microcomputer is connected to the grid of the 4th field effect transistor by the 8th resistance, the drain electrode of the 4th field effect transistor exports drop-down drive singal by the 7th resistance.
In such a configuration, described switching tube is MOSFET or IGBT.
In such a configuration, it also comprises topological circuit, and described topological circuit comprises the first diode, the first inductance and the first electric capacity, one end ground connection of described first diode, and the other end of the first diode is connected on switching tube; One end of described first inductance is connected on switching tube, and the other end of the first inductance is voltage output end; One end of described first electric capacity is connected to voltage output end, the other end ground connection of the first electric capacity.
In such a configuration, it also comprises feedback circuit, described feedback circuit is made up of the 3rd resistance, the 9th resistance and the 3rd electric capacity, one end of described 3rd resistance is connected to voltage output end, the other end of the 3rd resistance is connected to one end of the 9th resistance, and the link of the 3rd resistance and the 9th resistance is common port, described 9th resistance other end ground connection, described 3rd electric capacity and the 9th resistor coupled in parallel; The common port of described 3rd resistance and the 9th resistance is feedback voltage output, and described common port is electrically connected to the feedback signal input terminal of digital processing chip or single-chip microcomputer.
The beneficial effects of the utility model are: when the pwm signal that digital processing chip MCU exports is high, and the 3rd field effect transistor gate-source voltage difference is zero to cut-off, the first triode also ends, the second resistance Non voltage output; High level makes the 4th field effect transistor conducting through the 8th resistance simultaneously, and the second fet gate voltage drags down through the 7th resistance, the 4th field effect transistor, the second field effect transistor cut-off; When the pwm signal that digital processing chip MCU exports is low, the 4th field effect transistor cut-off; 3rd field effect transistor conducting, the first transistor base are through the 6th resistance, and the second diode drags down, the first transistor emitter collector electrode conducting, through the second resistance output HIGH voltage, and the second field effect transistor conducting; The utility model this kind of discrete component HF switch gate driver circuit, realize HF switch raster data model at little element with very under low cost condition, replacement gate drive IC, improves product cost, and product has good market prospects.
Accompanying drawing explanation
Fig. 1 is the functional-block diagram of a kind of discrete component HF switch gate driver circuit of the present utility model.
One specific embodiment figure of Fig. 2 position a kind of discrete component HF switch gate driver circuit of the present utility model.
Embodiment
In order to make the purpose of this utility model, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the utility model is further elaborated.Should be appreciated that specific embodiment described herein only for explaining the utility model, and be not used in restriction the utility model.
With reference to shown in Fig. 1, the utility model discloses a kind of discrete component HF switch gate driver circuit, this kind of circuit structure of the present utility model realizes HF switch raster data model under the condition of little element and very low cost, instead of raster data model IC, improves the cost performance of product.In the embodiment illustrated in fig. 1, described discrete component HF switch gate driver circuit comprises drive singal module 10, level switch module 20, pulling drive module 30, drop-down driver module 40 and switching tube 50, below we are described in detail the discrete component HF switch gate driver circuit in the present embodiment in conjunction with the function of each module.Wherein, described drive singal module 10 comprises digital processing chip or single-chip microcomputer, and drive singal module 10 produces the PWM(PulseWidthModulation exported by digital processing chip or single-chip microcomputer, pulse width modulation) control signal; Described level switch module 20 is connected in drive singal module 10, for pwm signal is carried out level conversion, and exports to pulling drive module 30; Described pulling drive module 30 is connected on level switch module 20, and described drop-down driver module 40 is connected in described drive singal module 10, and described pulling drive module 30, drop-down driver module 40 are for the amplification of drive singal voltage and current; Described switching tube 50 is connected on pulling drive module 30 and described drop-down driver module 40.
As shown in Figure 2, for a specific embodiment of described discrete component HF switch gate driver circuit, in the present embodiment, we are described in detail described drive singal module 10, level switch module 20, pulling drive module 30, drop-down driver module 40 and switching tube 50.Described level switch module 20 comprises accessory power supply VCC, the 5th resistance R5 and the 3rd field effect transistor Q3, accessory power supply VCC are connected to the grid of the 3rd field effect transistor Q3 by the 5th resistance R5; In the present embodiment, described drive singal module 10 comprises digital processing chip MCU, and the pwm control signal pin of digital processing chip MCU is connected to the source electrode of the 3rd field effect transistor Q3.The digital processing chip MCU of described drive singal module 10 has auxiliary power interface, and described accessory power supply VCC is connected to auxiliary power interface.Described pulling drive module 30 comprises the first triode Q1, the second resistance R2, the 4th resistance R4, the 6th resistance R6 and drives the accessory power supply of described switching tube 50, the source electrode of described 3rd field effect transistor Q3 is connected to the base stage of the first triode Q1 by the 6th resistance R6, described accessory power supply one tunnel is connected to the emitter of the first triode Q1, the 4th resistance R4 of separately leading up to is connected to the base stage of the first triode Q1, and the collector electrode of the first triode Q1 exports pulling drive signal by the second resistance R2.In the present embodiment, as shown in Figure 2, the voltage of the accessory power supply of described driving switch pipe 50 is 12V.In addition, between described level switch module 20 and pulling drive module 30, be provided with the second diode D2, and the second diode D2 is arranged between the 6th resistance R6 and the 3rd field effect transistor Q3.
Further, described drop-down driver module 40 comprises the 4th field effect transistor Q4, the 7th resistance R7 and the 8th resistance R8, the pwm control signal pin of described digital processing chip MCU is connected to the grid of the 4th field effect transistor Q4 by the 8th resistance R8, the drain electrode of the 4th field effect transistor Q4 exports drop-down drive singal by the 7th resistance R7.In the present embodiment, described switching tube 50 is MOSFET or IGBT, and certainly, switching tube 50 also can be the device for power switching of other kinds.
Further, in the present embodiment, described discrete component HF switch gate driver circuit also comprises feedback circuit, described feedback circuit is made up of the 3rd resistance R3, the 9th resistance R9 and the 3rd electric capacity C3, one end of described 3rd resistance R3 is connected to voltage output end, the other end of the 3rd resistance R3 is connected to one end of the 9th resistance R9, and the link of the 3rd resistance R3 and the 9th resistance R9 is common port, described 9th resistance R9 other end ground connection, described 3rd electric capacity C3 is in parallel with the 9th resistance R9; The common port of described 3rd resistance R3 and the 9th resistance R9 is feedback voltage output, and described common port is electrically connected to the feedback signal input terminal of digital processing chip MCU.Further, described discrete component HF switch gate driver circuit also comprises topological circuit, described topological circuit comprises the first diode D1, the first inductance L 1 and the first electric capacity C1, one end ground connection of described first diode D1, and the other end of the first diode D1 is connected on switching tube 50; One end of described first inductance L 1 is connected on switching tube 50, and the other end of the first inductance L 1 is voltage output end; One end of described first electric capacity C1 is connected to voltage output end, the other end ground connection of the first electric capacity C1.
Shown in composition graphs 2, we are described the main operational principle of the discrete component HF switch gate driver circuit in described embodiment, when the pwm signal that digital processing chip MCU exports is high, 3rd field effect transistor Q3 gate-source voltage difference is zero to cut-off, the first triode Q1 also ends, the second resistance R2 Non voltage output; High level makes the 4th field effect transistor Q4 conducting through the 8th resistance R8 simultaneously, and the second field effect transistor Q2 grid voltage drags down through the 7th resistance R7, the 4th field effect transistor Q4, the second field effect transistor Q2 cut-off.When the pwm signal that digital processing chip MCU exports is low, the 4th field effect transistor Q4 cut-off; 3rd field effect transistor Q3 conducting, the first triode Q1 base stage are through the 6th resistance R6, and the second diode D2 drags down, the first triode Q1 emitter collector electrode conducting, through the second resistance R2 output HIGH voltage, and the second field effect transistor Q2 conducting.Second diode D2 plays and reduces the effect of system standby power consumption, also can short circuit D2 diode when requiring without this.When discrete component HF switch gate driver circuit of the present utility model is applied in reduction voltage circuit topological structure as shown in Figure 2, output voltage feeds back to digital processing chip MCU through the 3rd R3, the 9th resistance R9 after sampling, digital processing chip MCU is according to output voltage state adjustment PWM duty ratio, control stable output based on existing mature technology, do not repeat them here.The utility model this kind of discrete component HF switch gate driver circuit, realize HF switch raster data model at little element with very under low cost condition, replacement gate drive IC, improves product cost, and product has good market prospects.
Described above is only preferred embodiment of the present utility model, and above-mentioned specific embodiment is not to restriction of the present utility model.In technological thought category of the present utility model, can occur various distortion and amendment, all those of ordinary skill in the art, according to describing retouching, the amendment made above or equivalent replacing, all belong to the scope that the utility model is protected.
Claims (10)
1. a discrete component HF switch gate driver circuit, is characterized in that: it comprises drive singal module, level switch module, pulling drive module, drop-down driver module and switching tube; Wherein
Described drive singal module comprises digital processing chip or single-chip microcomputer, and described drive singal module produces the pwm control signal exported by digital processing chip or single-chip microcomputer;
Described level switch module is connected in drive singal module, for pwm signal is carried out level conversion, and exports to pulling drive module;
Described pulling drive model calling is on level switch module, and described drop-down driver module is connected in described drive singal module, and described pulling drive module, drop-down driver module are used for the amplification of drive singal voltage and current;
Described switching tube is connected on pulling drive module and described drop-down driver module.
2. a kind of discrete component HF switch gate driver circuit according to claim 1, it is characterized in that: described level switch module comprises accessory power supply VCC, the 5th resistance and the 3rd field effect transistor, accessory power supply VCC is connected to the grid of the 3rd field effect transistor by the 5th resistance, and the pwm control signal pin of described digital processing chip or single-chip microcomputer is connected to the source electrode of the 3rd field effect transistor.
3. a kind of discrete component HF switch gate driver circuit according to claim 2, it is characterized in that: the digital processing chip of described drive singal module or single-chip microcomputer have auxiliary power interface, described accessory power supply VCC is connected to auxiliary power interface.
4. a kind of discrete component HF switch gate driver circuit according to claim 2, it is characterized in that: described pulling drive module comprises the first triode, the second resistance, the 4th resistance, the 6th resistance and drives the accessory power supply of described switching tube, the source electrode of described 3rd field effect transistor is connected to the base stage of the first triode by the 6th resistance, described accessory power supply one tunnel is connected to the emitter of the first triode, the 4th resistance of separately leading up to is connected to the base stage of the first triode, and the collector electrode of the first triode exports pulling drive signal by the second resistance.
5. a kind of discrete component HF switch gate driver circuit according to claim 4, is characterized in that: the voltage of the accessory power supply of described driving switch pipe is 12V.
6. a kind of discrete component HF switch gate driver circuit according to claim 4, it is characterized in that: between described level switch module and pulling drive module, be provided with the second diode, and the second diode is arranged between the 6th resistance and the 3rd field effect transistor.
7. a kind of discrete component HF switch gate driver circuit according to claim 2, it is characterized in that: described drop-down driver module comprises the 4th field effect transistor, the 7th resistance and the 8th resistance, the pwm control signal pin of described digital processing chip or single-chip microcomputer is connected to the grid of the 4th field effect transistor by the 8th resistance, the drain electrode of the 4th field effect transistor exports drop-down drive singal by the 7th resistance.
8. a kind of discrete component HF switch gate driver circuit according to claim 1, is characterized in that: described switching tube is MOSFET or IGBT.
9. a kind of discrete component HF switch gate driver circuit according to claim 1, it is characterized in that: it also comprises topological circuit, described topological circuit comprises the first diode, the first inductance and the first electric capacity, one end ground connection of described first diode, the other end of the first diode is connected on switching tube; One end of described first inductance is connected on switching tube, and the other end of the first inductance is voltage output end; One end of described first electric capacity is connected to voltage output end, the other end ground connection of the first electric capacity.
10. a kind of discrete component HF switch gate driver circuit according to claim 1, it is characterized in that: it also comprises feedback circuit, described feedback circuit is made up of the 3rd resistance, the 9th resistance and the 3rd electric capacity, one end of described 3rd resistance is connected to voltage output end, the other end of the 3rd resistance is connected to one end of the 9th resistance, and the link of the 3rd resistance and the 9th resistance is common port, described 9th resistance other end ground connection, described 3rd electric capacity and the 9th resistor coupled in parallel; The common port of described 3rd resistance and the 9th resistance is feedback voltage output, and described common port is electrically connected to the feedback signal input terminal of digital processing chip or single-chip microcomputer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521076691.XU CN205232018U (en) | 2015-12-21 | 2015-12-21 | Discrete component high frequency switch gate drive circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521076691.XU CN205232018U (en) | 2015-12-21 | 2015-12-21 | Discrete component high frequency switch gate drive circuit |
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| CN205232018U true CN205232018U (en) | 2016-05-11 |
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| CN201521076691.XU Withdrawn - After Issue CN205232018U (en) | 2015-12-21 | 2015-12-21 | Discrete component high frequency switch gate drive circuit |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105391277A (en) * | 2015-12-21 | 2016-03-09 | 深圳市纽莱克科技有限公司 | High-frequency switch driving circuit of discrete component |
| TWI824590B (en) * | 2021-06-30 | 2023-12-01 | 愛爾蘭商納維達斯半導體有限公司 | Transistor turn-off circuit for a power converter, method of turning off a power transistor, and power converter circuit |
| US11855635B2 (en) | 2021-06-30 | 2023-12-26 | Navitas Semiconductor Limited | Transistor DV/DT control circuit |
-
2015
- 2015-12-21 CN CN201521076691.XU patent/CN205232018U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105391277A (en) * | 2015-12-21 | 2016-03-09 | 深圳市纽莱克科技有限公司 | High-frequency switch driving circuit of discrete component |
| TWI824590B (en) * | 2021-06-30 | 2023-12-01 | 愛爾蘭商納維達斯半導體有限公司 | Transistor turn-off circuit for a power converter, method of turning off a power transistor, and power converter circuit |
| US11855635B2 (en) | 2021-06-30 | 2023-12-26 | Navitas Semiconductor Limited | Transistor DV/DT control circuit |
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| C14 | Grant of patent or utility model | ||
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| AV01 | Patent right actively abandoned |
Granted publication date: 20160511 Effective date of abandoning: 20181123 |
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| AV01 | Patent right actively abandoned |