CN105391277B - A kind of discrete component HF switch gate driving circuit - Google Patents
A kind of discrete component HF switch gate driving circuit Download PDFInfo
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- CN105391277B CN105391277B CN201510969944.4A CN201510969944A CN105391277B CN 105391277 B CN105391277 B CN 105391277B CN 201510969944 A CN201510969944 A CN 201510969944A CN 105391277 B CN105391277 B CN 105391277B
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 16
- 230000005669 field effect Effects 0.000 claims description 38
- 239000003990 capacitor Substances 0.000 claims description 15
- 230000003321 amplification Effects 0.000 abstract description 2
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 2
- 230000004075 alteration Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 206010063385 Intellectualisation Diseases 0.000 description 1
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- 230000006872 improvement Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0006—Arrangements for supplying an adequate voltage to the control circuit of converters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0012—Control circuits using digital or numerical techniques
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electronic Switches (AREA)
Abstract
The invention discloses a kind of discrete component HF switch gate driving circuits, are related to driving circuit technical field；It includes driving signal module, level switch module, pulling drive module, drop-down drive module and switching tube；Driving signal module includes digital processing chip or single-chip microcontroller, and driving signal module generates the pwm control signal exported by digital processing chip or single-chip microcontroller；Level switch module is connected in driving signal module, for pwm signal to be carried out level conversion, and is exported and is given pulling drive module；Pulling drive module is connected on level switch module, and drop-down drive module is connected in driving signal module, and pulling drive module, drop-down drive module are used for the amplification of driving signal voltage and current；Switching tube is connected in pulling drive module and drop-down drive module；The beneficial effects of the invention are as follows：Seldom element and it is very inexpensive under the conditions of realize HF switch gate driving, replacement gate drive IC, improve product cost.
Description
Technical Field
The present invention relates to a driving circuit, and more particularly, to a discrete component high frequency switching gate driving circuit.
Background
With the miniaturization and intellectualization of electronic products, the application of digital control power supplies is more and more extensive. The common simple digital power supply comprises an operation and control unit consisting of a DSP or a singlechip, a grid drive chip, a switching tube, an inductor and other elements. The digital control unit outputs a low-voltage high-internal resistance signal of about 5V, cannot be directly used for driving a switching tube, and needs a grid driving chip for conversion. The cost of the grid driving chip is high, and the cost performance of a low-power product is reduced.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a discrete element high-frequency switch gate drive circuit which is simple in structure, low in cost and capable of improving the cost performance of a product.
The technical scheme of the invention is realized as follows: in a discrete component high frequency switching gate drive circuit, the improvement comprising: the device comprises a driving signal module, a level conversion module, a pull-up driving module, a pull-down driving module and a switching tube; wherein,
the driving signal module comprises a digital processing chip or a single chip microcomputer, and the driving signal module generates a PWM control signal output by the digital processing chip or the single chip microcomputer;
the level conversion module is connected to the driving signal module and used for carrying out level conversion on the PWM control signal and outputting the PWM control signal to the pull-up driving module;
the pull-up driving module is connected to a drain electrode of a third field effect transistor of the level conversion module, the pull-down driving module is connected to the driving signal module, and the pull-up driving module and the pull-down driving module are used for driving amplification of signal voltage and current;
the switch tube is connected to the pull-up driving module and the pull-down driving module.
In the structure, the level conversion module comprises an auxiliary power supply VCC, a fifth resistor and a third field effect transistor, the auxiliary power supply VCC is connected to the grid electrode of the third field effect transistor through the fifth resistor, and the PWM control signal pin of the digital processing chip or the single chip microcomputer is connected to the source electrode of the third field effect transistor.
Furthermore, an auxiliary power supply interface is arranged on a digital processing chip or a single chip microcomputer of the driving signal module, and the auxiliary power supply VCC is connected to the auxiliary power supply interface.
Furthermore, the pull-up driving module comprises a first triode, a second resistor, a fourth resistor, a sixth resistor and an auxiliary power supply for driving the switching tube, a drain electrode of the third field effect tube is connected to a base electrode of the first triode through the sixth resistor, one path of the auxiliary power supply is connected to an emitting electrode of the first triode, the other path of the auxiliary power supply is connected to the base electrode of the first triode through the fourth resistor, and a collector electrode of the first triode outputs a pull-up driving signal through the second resistor.
Further, the voltage of the auxiliary power supply for driving the switching tube is 12V.
Furthermore, a second diode is arranged between the level conversion module and the pull-up driving module, and the second diode is arranged between the sixth resistor and the drain electrode of the third field effect transistor.
In the structure, the pull-down driving module comprises a fourth field effect transistor, a seventh resistor and an eighth resistor, a PWM control signal pin of the digital processing chip or the single chip microcomputer is connected to a gate of the fourth field effect transistor through the eighth resistor, and a drain of the fourth field effect transistor outputs the pull-down driving signal through the seventh resistor.
In the above structure, the switching tube is a MOSFET or an IGBT.
In the above structure, the power supply further comprises a topology circuit, wherein the topology circuit comprises a first diode, a first inductor and a first capacitor, the positive end of the first diode is grounded, and the negative end of the first diode is connected to the switching tube; one end of the first inductor is connected to the switching tube, and the other end of the first inductor is a voltage output end; one end of the first capacitor is connected to the voltage output end, and the other end of the first capacitor is grounded.
In the above structure, the feedback circuit further includes a feedback circuit, where the feedback circuit is composed of a third resistor, a ninth resistor, and a third capacitor, one end of the third resistor is connected to the voltage output end, the other end of the third resistor is connected to one end of the ninth resistor, a connection end between the third resistor and the ninth resistor is a common end, the other end of the ninth resistor is grounded, and the third capacitor is connected in parallel with the ninth resistor; and the common end of the third resistor and the ninth resistor is a feedback voltage output end, and the common end is electrically connected to a feedback signal input end of the digital processing chip or the singlechip.
The invention has the beneficial effects that: when the PWM control signal output by the digital processing chip MCU is high, the voltage difference of the grid source electrode of the third field effect transistor is zero, the first triode is also cut off, and the second resistor has no voltage output; meanwhile, the high level enables the fourth field effect transistor to be conducted through the eighth resistor, the grid voltage of the second field effect transistor is pulled down through the seventh resistor and the fourth field effect transistor, and the second field effect transistor is cut off; when the PWM control signal output by the digital processing chip MCU is low, the fourth field effect transistor is cut off; the third field effect transistor is conducted, the base electrode of the first triode is pulled down through the sixth resistor and the second diode, the collector electrode of the emitter of the first triode is conducted, high voltage is output through the second resistor, and the second field effect transistor is conducted; the discrete component high-frequency switch grid driving circuit realizes high-frequency switch grid driving under the conditions of few components and low cost, replaces a grid driving IC, improves the cost performance of products, and has good market prospect.
Drawings
Fig. 1 is a schematic block diagram of a discrete component high frequency switching gate drive circuit of the present invention.
FIG. 2 is a diagram of an embodiment of a discrete component high frequency switching gate driver circuit according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1, the invention discloses a discrete component high frequency switch gate driving circuit, and the circuit structure of the invention realizes high frequency switch gate driving under the conditions of few components and low cost, replaces a gate driving IC, and improves the cost performance of products. In the embodiment shown in fig. 1, the discrete component high-frequency switching gate driving circuit includes a driving signal module 10, a level converting module 20, a pull-up driving module 30, a pull-down driving module 40, and a switching tube 50, and the discrete component high-frequency switching gate driving circuit in this embodiment is described in detail below with reference to functions of the respective modules. The driving signal module 10 includes a digital processing chip or a single chip, and the driving signal module 10 generates a PWM (Pulse Width Modulation) control signal output by the digital processing chip or the single chip; the level conversion module 20 is connected to the driving signal module 10, and is configured to perform level conversion on the PWM control signal and output the PWM control signal to the pull-up driving module 30; the pull-up driving module 30 is connected to the level shifting module 20, the pull-down driving module 40 is connected to the driving signal module 10, and the pull-up driving module 30 and the pull-down driving module 40 are used for amplifying driving signal voltage and current; the switching tube 50 is connected to the pull-up driving module 30 and the pull-down driving module 40.
As shown in fig. 2, a specific embodiment of the discrete component high-frequency switching gate driving circuit is shown, in this embodiment, the driving signal module 10, the level shifting module 20, the pull-up driving module 30, the pull-down driving module 40, and the switching tube 50 are described in detail. The level shift module 20 includes an auxiliary power VCC, a fifth resistor R5 and a third fet Q3, the auxiliary power VCC is connected to the gate of the third fet Q3 through the fifth resistor R5; in this embodiment, the driving signal module 10 includes a digital processing chip MCU, and a PWM control signal pin of the digital processing chip MCU is connected to the source of the third fet Q3. An auxiliary power supply interface is arranged on the digital processing chip MCU of the driving signal module 10, and the auxiliary power supply VCC is connected to the auxiliary power supply interface. The pull-up driving module 30 includes a first triode Q1, a second resistor R2, a fourth resistor R4, a sixth resistor R6 and an auxiliary power supply for driving the switching tube 50, the drain of the third field effect transistor Q3 is connected to the base of the first triode Q1 through the sixth resistor R6, one path of the auxiliary power supply is connected to the emitter of the first triode Q1, the other path of the auxiliary power supply is connected to the base of the first triode Q1 through the fourth resistor R4, and the collector of the first triode Q1 outputs a pull-up driving signal through the second resistor R2. In this embodiment, as shown in fig. 2, the voltage of the auxiliary power supply for driving the switch tube 50 is 12V. In addition, a second diode D2 is disposed between the level shift module 20 and the pull-up driving module 30, and a second diode D2 is disposed between the sixth resistor R6 and the drain of the third fet Q3.
Further, the pull-down driving module 40 includes a fourth field effect transistor Q4, a seventh resistor R7 and an eighth resistor R8, the PWM control signal pin of the digital processing chip MCU is connected to the gate of the fourth field effect transistor Q4 through the eighth resistor R8, and the drain of the fourth field effect transistor Q4 outputs a pull-down driving signal through the seventh resistor R7. In this embodiment, the switch tube 50 is a MOSFET or an IGBT, but the switch tube 50 may be other types of power switches.
Further, in this embodiment, the discrete component high-frequency switch gate driving circuit further includes a feedback circuit, the feedback circuit is composed of a third resistor R3, a ninth resistor R9 and a third capacitor C3, one end of the third resistor R3 is connected to the voltage output end, the other end of the third resistor R3 is connected to one end of a ninth resistor R9, a connection end of the third resistor R3 and the ninth resistor R9 is a common end, the other end of the ninth resistor R9 is grounded, and the third capacitor C3 is connected in parallel with the ninth resistor R9; and the common end of the third resistor R3 and the ninth resistor R9 is a feedback voltage output end, and the common end is electrically connected to a feedback signal input end of the digital processing chip MCU. Furthermore, the discrete component high frequency switch gate driving circuit further comprises a topology circuit, the topology circuit comprises a first diode D1, a first inductor L1 and a first capacitor C1, the positive terminal of the first diode D1 is grounded, and the negative terminal of the first diode D1 is connected to the switch tube 50; one end of the first inductor L1 is connected to the switching tube 50, and the other end of the first inductor L1 is a voltage output end; one end of the first capacitor C1 is connected to the voltage output end, and the other end of the first capacitor C1 is grounded.
Referring to fig. 2, we will explain the main operation principle of the discrete component high frequency switch gate driving circuit in the embodiment, when the PWM control signal output by the digital processing chip MCU is high, the gate-source voltage difference of the third fet Q3 is zero, the first transistor Q1 is also turned off, and the second resistor R2 has no voltage output; meanwhile, the high level makes the fourth field effect transistor Q4 turned on through the eighth resistor R8, the gate voltage of the second field effect transistor Q2 is pulled low through the seventh resistor R7 and the fourth field effect transistor Q4, and the second field effect transistor Q2 is turned off. When the PWM control signal output by the digital processing chip MCU is low, the fourth field effect transistor Q4 is cut off; the third field effect transistor Q3 is conducted, the base electrode of the first triode Q1 is pulled down through the sixth resistor R6 and the second diode D2, the collector electrode of the first triode Q1 is conducted, high voltage is output through the second resistor R2, and the second field effect transistor Q2 is conducted. The second diode D2 is used to reduce the standby power consumption of the system, and the D2 diode can be short-circuited without such requirement. When the discrete component high-frequency switch gate drive circuit is applied to the voltage reduction circuit topology structure shown in fig. 2, the output voltage is sampled by the third resistor R3 and the ninth resistor R9 and then fed back to the digital processing chip MCU, the digital processing chip MCU adjusts the PWM duty ratio according to the output voltage state, and the stable output is controlled based on the prior art, which is not described herein again. The discrete component high-frequency switch grid driving circuit realizes high-frequency switch grid driving under the conditions of few components and low cost, replaces a grid driving IC, improves the cost performance of products, and has good market prospect.
The above description is only for the preferred embodiment of the present invention, and the above specific embodiments are not intended to limit the present invention. Various modifications and alterations may occur to those skilled in the art without departing from the spirit and scope of the invention, and such modifications and alterations should be accorded the broadest interpretation so as to encompass all such modifications and alterations.
Claims (9)
1. A discrete component high frequency switching gate drive circuit, comprising: the device comprises a driving signal module, a level conversion module, a pull-up driving module, a pull-down driving module and a switching tube; wherein
The driving signal module comprises a digital processing chip or a single chip microcomputer, and the driving signal module generates a PWM control signal output by the digital processing chip or the single chip microcomputer;
the level conversion module is connected to the driving signal module and used for carrying out level conversion on the PWM control signal and outputting the PWM control signal to the pull-up driving module; the level conversion module comprises an auxiliary power supply VCC, a fifth resistor and a third field effect transistor, the auxiliary power supply VCC is connected to the grid electrode of the third field effect transistor through the fifth resistor, and a PWM control signal pin of the digital processing chip or the singlechip is connected to the source electrode of the third field effect transistor;
the pull-up driving module is connected to a drain electrode of a third field effect transistor of the level conversion module; the pull-down driving module is connected to the driving signal module, and the pull-up driving module and the pull-down driving module are used for amplifying driving signal voltage and current;
the switch tube is connected to the pull-up driving module and the pull-down driving module.
2. A discrete component high frequency switching gate drive circuit as claimed in claim 1, wherein: and an auxiliary power supply interface is arranged on a digital processing chip or a singlechip of the driving signal module, and the auxiliary power supply VCC is connected to the auxiliary power supply interface.
3. A discrete component high frequency switching gate drive circuit as claimed in claim 1, wherein: the pull-up driving module comprises a first triode, a second resistor, a fourth resistor, a sixth resistor and an auxiliary power supply for driving the switching tube, the drain electrode of the third field effect tube is connected to the base electrode of the first triode through the sixth resistor, one path of the auxiliary power supply is connected to the emitting electrode of the first triode, the other path of the auxiliary power supply is connected to the base electrode of the first triode through the fourth resistor, and the collector electrode of the first triode outputs a pull-up driving signal through the second resistor.
4. A discrete component high frequency switching gate drive circuit as claimed in claim 3, wherein: the voltage of the auxiliary power supply for driving the switching tube is 12V.
5. A discrete component high frequency switching gate drive circuit as claimed in claim 3, wherein: and a second diode is arranged between the level conversion module and the pull-up driving module, and the second diode is arranged between the sixth resistor and the drain electrode of the third field effect transistor.
6. A discrete component high frequency switching gate drive circuit as claimed in claim 1, wherein: the pull-down driving module comprises a fourth field effect transistor, a seventh resistor and an eighth resistor, a PWM control signal pin of the digital processing chip or the single chip microcomputer is connected to a grid electrode of the fourth field effect transistor through the eighth resistor, a drain electrode of the fourth field effect transistor outputs a pull-down driving signal through the seventh resistor, and a source electrode of the fourth field effect transistor is grounded.
7. A discrete component high frequency switching gate drive circuit as claimed in claim 1, wherein: the switch tube is MOSFET or IGBT.
8. A discrete component high frequency switching gate drive circuit as claimed in claim 1, wherein: the circuit also comprises a topological circuit, wherein the topological circuit comprises a first diode, a first inductor and a first capacitor, the positive end of the first diode is grounded, and the negative end of the first diode is connected to the switching tube; one end of the first inductor is connected to the switching tube, and the other end of the first inductor is a voltage output end; one end of the first capacitor is connected to the voltage output end, and the other end of the first capacitor is grounded.
9. A discrete component high frequency switching gate drive circuit as claimed in claim 1, wherein: the feedback circuit is composed of a third resistor, a ninth resistor and a third capacitor, one end of the third resistor is connected to the voltage output end, the other end of the third resistor is connected to one end of the ninth resistor, the connecting end of the third resistor and the ninth resistor is a common end, the other end of the ninth resistor is grounded, and the third capacitor is connected with the ninth resistor in parallel; and the common end of the third resistor and the ninth resistor is a feedback voltage output end, and the common end is electrically connected to a feedback signal input end of the digital processing chip or the singlechip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201510969944.4A CN105391277B (en) | 2015-12-21 | 2015-12-21 | A kind of discrete component HF switch gate driving circuit |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510969944.4A CN105391277B (en) | 2015-12-21 | 2015-12-21 | A kind of discrete component HF switch gate driving circuit |
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| CN105391277A CN105391277A (en) | 2016-03-09 |
| CN105391277B true CN105391277B (en) | 2018-11-23 |
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| CN117393585B (en) * | 2023-12-07 | 2024-04-05 | 深圳市冠禹半导体有限公司 | MOSFET device with high driving capability and driving circuit thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH08307236A (en) * | 1995-05-08 | 1996-11-22 | Hitachi Ltd | Driver and semiconductor device using the driver |
| US6725030B2 (en) * | 2000-12-28 | 2004-04-20 | Koninklijke Philips Electronics N.V. | CMOS radio frequency amplifier with inverter driver |
| US7466113B2 (en) * | 2004-07-07 | 2008-12-16 | 02Micro International Limited | Break-before-make sensing for drivers |
| JP4354360B2 (en) * | 2004-07-26 | 2009-10-28 | Ｏｋｉセミコンダクタ株式会社 | Buck power supply |
| CN101488713B (en) * | 2008-01-15 | 2011-05-04 | 天钰科技股份有限公司 | Voltage converter |
| CN201937299U (en) * | 2010-12-31 | 2011-08-17 | 崧顺电子（深圳）有限公司 | Charging device |
| CN105139825B (en) * | 2015-10-20 | 2017-08-25 | 京东方科技集团股份有限公司 | Shift register cell, gate drive apparatus, display device, control method |
| CN205232018U (en) * | 2015-12-21 | 2016-05-11 | 深圳市纽莱克科技有限公司 | Discrete component high frequency switch gate drive circuit |
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