KR101758808B1 - Intelligent Power Module And Power Driving Module Thereof - Google Patents

Intelligent Power Module And Power Driving Module Thereof Download PDF

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Publication number
KR101758808B1
KR101758808B1 KR1020150081720A KR20150081720A KR101758808B1 KR 101758808 B1 KR101758808 B1 KR 101758808B1 KR 1020150081720 A KR1020150081720 A KR 1020150081720A KR 20150081720 A KR20150081720 A KR 20150081720A KR 101758808 B1 KR101758808 B1 KR 101758808B1
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South Korea
Prior art keywords
negative voltage
gate
node
pwm signal
terminal
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KR1020150081720A
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Korean (ko)
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KR20160145867A (en
Inventor
김은식
원덕희
이남원
김현기
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(주)하이브론
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/28—Modifications for introducing a time delay before switching
    • H03K17/284—Modifications for introducing a time delay before switching in field effect transistor switches
    • H02M2001/0006—
    • H02M2001/0032—

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)

Abstract

The present invention relates to an intelligent power module and a power supply driving module thereof, and an intelligent power module according to the present invention includes an IGBT operating by receiving an input signal to a gate thereof; A negative voltage generator for generating a negative voltage using the PWM signal of the gate driver; And
And a gate signal output unit for receiving a PWM signal of the gate driver and outputting the gate signal as a gate input signal to the IGBT, using a positive voltage supplied from an external power source and a negative voltage supplied from the negative voltage generator as a power source .
As a result, no separate switching signal generator or IC is required by using the PWM signal of the gate driver, so that the circuit is simple and the cost is low, which is economical. In addition, EMI noise is reduced because the negative power line is not exposed to the outside of the intelligent power module. Furthermore, since the negative voltage generating circuit is located inside the intelligent power module, the length of the power supply line is short, and the power loss consumed in the power supply line can be reduced. In addition, the line inductance decreases, and the switching can be stabilized.

Description

TECHNICAL FIELD [0001] The present invention relates to an intelligent power module and a power driving module,

The present invention relates to an intelligent power module and a power source driving module thereof, and more particularly, to an intelligent power module including a negative power source self-generating circuit therein and a power source driving module thereof.

In general, intelligent power modules (IPMs) are components that integrate IGBTs (insulated gate bipolar transistors) and drive ICs that drive them into a single package. The power driver circuit is generally composed of an IGBT and a diode. The specifications of the IGBT and the diode provided in the power driver circuit are adapted to the specification of the IPM circuit or the specification of the system in which the IPM circuit is used.

Figure 1 shows an example of a single power source for a conventional IGBT module driver of a conventional small current power module. As shown in FIG. 1, the small-current power module operates by receiving a power of 15 V from the outside. Even though a single power source is used, there is no problem in performance. In the case of a high-power power module, Noise is generated in the periphery, and the IGBT is slightly turned on by the noise, and excessive heat may be generated. Furthermore, excessive heat generation can lead to damage to the product and shortened life span. Therefore, in order to operate the high power power module stably, a minus voltage (for example, -5V, -8V) should be applied instead of the ground (GND, 0V) so as to surely turn off.

Figure 2 shows an example of a dual power source of a conventional IGBT module driver of a conventional high power power module. Referring to FIG. 2, an external power source (for example, 15 V) and a negative power source (for example, 8 V) are operated from outside.

Figures 3a and 3b illustrate examples of conventional dual power source circuits. FIG. 3A shows an example of a linear power supply circuit. The linear power supply circuit has a disadvantage in that the efficiency is lowered due to a large power loss. FIG. 3B shows a disadvantage in that the circuit is complicated and expensive A linear power supply circuit is mainly used.

FIG. 4 shows an example of a general IGBT module driver of a high power power module to which a conventional dual power source is connected. 4, the external power supply includes a negative power generation circuit in addition to the positive power generation circuit. In this case, when the negative voltage source line is long and the IGBT gate current flows through the long line, the switching off time is long due to the line inductance Loses. Here, if the switching-off time becomes longer, the switching loss increases in the IGBT device and the EMI caused by the negative voltage source line also increases.

Generally, the power module is composed of the upper switching unit and the lower switching unit. Since the negative voltage source line of the upper switching unit changes according to the PWM switching from -8V to the bus voltage (for example, 450V), the high- Circuitry can be adversely affected.

In order to solve the above-mentioned problems, it is an object of the present invention to provide a power supply for an intelligent power module including an internal power supply self-generating circuit and an intelligent power module including the same.

The above object of the present invention can be achieved by an intelligent power module comprising: an IGBT operating with an input signal to a gate; A negative voltage generator for generating a negative voltage using the PWM signal of the gate driver; And a gate signal output unit receiving a positive voltage supplied from an external power source and a negative voltage supplied from the negative voltage generator and receiving a PWM signal of the gate driver and outputting a gate input signal to the IGBT ≪ / RTI >

The negative voltage generator may include a booster circuit part connected in parallel to a rear end of a resistor element connected to a PWM signal output terminal of the gate driver.

The booster circuit unit includes a switching device that receives the PWM signal and performs a switching operation, a diode that half-wave rectifies an AC signal generated from the switching device, and a capacitor that charges the half-wave rectified signal and outputs the half-wave rectified signal to the gate signal output unit can do.

Further, the gate signal output unit may include a first switching device that receives a positive voltage supplied from the external power source and receives the PWM signal to perform switching operation, and a second switching device that receives a negative voltage supplied from the negative power source And a second switching element receiving the PWM signal and performing a switching operation, wherein the first switching element and the second switching element are connected in parallel to output the gate input signal by a switching operation.

In addition, the first switching device may include an N-channel MOSFET device, and the second switching device may include a P-channel MOSFET device.

According to another aspect of the present invention, there is provided a power supply driving module of an intelligent power module, comprising: an IGBT operating by receiving an input signal through a gate; A negative voltage generator for generating a negative voltage using the PWM signal of the gate driver; And a gate signal output unit receiving a positive voltage supplied from an external power source, a negative voltage supplied from the negative voltage generator, and a PWM signal of the gate driver and outputting a gate input signal to the IGBT The power supply module of the intelligent power module.

As described above, since the intelligent power module according to the present invention does not require a separate switching generation signal or IC using the PWM signal of the gate driver, the circuit is simple, and the cost is low, which is economical. In addition, EMI noise is reduced because the negative power line is not exposed to the outside of the intelligent power module. Furthermore, since the negative voltage generating circuit is located inside the intelligent power module without receiving the negative voltage from the external power source, the length of the power source line is short, so that power loss consumed in the power source line can be reduced. In addition, the line inductance decreases, and the switching can be stabilized.

Figure 1 shows an example of a single power source for a conventional IGBT module driver of a conventional small current power module.
Figure 2 shows an example of a dual power source of a conventional IGBT module driver of a conventional high power power module.
Figures 3a and 3b illustrate examples of conventional dual power source circuits.
FIG. 4 shows an example of a general IGBT module driver of a high power power module to which a conventional dual power source is connected.
FIG. 5 illustrates an example of some circuits of an intelligent power module according to an embodiment of the present invention.
6 illustrates an example of a negative voltage generator according to an embodiment of the present invention.

Hereinafter, specific embodiments of the present invention will be described with reference to the drawings.

FIG. 5 illustrates an example of some circuits of an intelligent power module according to an embodiment of the present invention. 5, the intelligent power module includes a gate driver 1, an IGBT (Q 1 ), a negative voltage generator 10, and a gate signal output unit 20.

As for the gate driver 1 to drive the IGBT (Q 1), the input power supplied from the external power source is received by processing according to the operating power supply of the IGBT (Q 1) that outputs the gate signal output unit 20, On the other hand, a PWM (Pulse Width Modulation) signal for controlling the switching of the IGBT Q 1 is output to the gate signal output unit 20.

The negative voltage generating unit 10 generates a negative voltage using the PWM signal output from the gate driver 1 and outputs the generated negative voltage to the gate signal output unit 20, and a booster circuit or the like can be used.

FIG. 6 illustrates an example of a negative voltage generator 10 according to an embodiment of the present invention.

6, the negative voltage generator 10 may be implemented as a booster circuit including a switching element Q 4 , an inductor L 1 , a diode D 1 , and a capacitor C 1 . have.

The switching element Q 4 receives the PWM signal and performs switching operation. The AC signal generated from the switching element Q 4 is half-wave rectified by the diode D 1 . The half-wave rectified signal is charged by the capacitor C 1 to generate a negative voltage, and the negative voltage is output to the gate signal output unit 20. In one embodiment of the present invention, a voltage of -8V is output.

As described above, the present invention can ensure stable switching by adding a simple negative voltage generator 10 in the intelligent power module instead of using an external complicated power supply.

Generally, the gate driver (1) The power supply IGBT (Q 1) is only in the moment of switching, so only a high current is the amount of the IGBT (Q 1) gate the nature current ignored except flows not necessarily large, the capacity of the power supply for the , Simple booster circuit can handle the power.

Therefore, in the present invention, the switching signal of Q 1 is very simple and economical because it uses the PWM signal of the gate driver 1 without using a separate switching signal generator or IC. In addition, since the PWM frequency used in the intelligent power module is generally about 10 kHz or more, the booster circuit has a merit that a negative voltage generating circuit can be easily implemented with a small capacity diode and a capacitor.

In FIG. 6, the negative voltage generator 10 is implemented as a booster circuit. However, the negative voltage generator 10 may be replaced with various circuits capable of generating a negative voltage.

Referring again to FIG. 5, the gate signal output section 20 is for outputting a gate input signal to the IGBT (Q 1 ), and includes a switching element and a resistance element.

PWM signal output terminal, and IGBT (Q 1) internal gate resistance (R in) is connected in series, the resistance is a N- channel MOSFET and a P- channel MOSFET connected in parallel to the rear end of the (R in), the PWM signal N- Channel MOSFET and the gate terminal of the P-channel MOSFET.

The drain terminal of the P-channel MOSFET is connected to the output terminal of the negative voltage generating part 10, and the drain terminal of the N-channel MOSFET is connected to the positive input terminal of the two switching elements So that the gate signal is generated alternately. In FIG. 5, I G denotes a gate current, RG (off) denotes a turn-off gate resistance, R G ( on ) denotes a turn-on gate resistance, and V GE denotes a gate-emitter voltage.

5 shows only the configuration corresponding to one IGBT (Q 1 ) in the intelligent power module. It is needless to say that the configuration of FIG. 5 may be included in a redundant manner depending on the number of IGBTs Q 1 .

In addition, in FIG. 5, the gate input signal is generated using two switching elements. However, it is also possible to use various circuits capable of generating a gate input signal.

The power supply driving module of the intelligent power module according to an embodiment of the present invention may be applied to the power supply driving module of the intelligent power module, Q 1 , a negative voltage generating unit 10, and a gate signal output unit 20.

The operation and detailed description of the IGBT (Q 1 ), the negative voltage generator 10, and the gate signal output unit 20 included in the power supply driving module of the intelligent power module are the same as or similar to those described above. This description will be omitted.

Furthermore, the present invention is applicable to all power modules in which a driver circuit should be embedded.

While the present invention has been described in connection with what is presently considered to be the most practical and preferred embodiment, it is to be understood that the invention is not limited to the disclosed embodiments. That is, within the scope of the present invention, all of the components may be selectively coupled to one or more of them.

Furthermore, the terms "comprises", "comprising", or "having" described above mean that a component can be implanted unless otherwise specifically stated, But should be construed as including other elements. All terms, including technical and scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs, unless otherwise defined. Commonly used terms, such as predefined terms, should be interpreted to be consistent with the contextual meanings of the related art, and are not to be construed as ideal or overly formal, unless expressly defined to the contrary.

The foregoing description is merely illustrative of the technical idea of the present invention and various changes and modifications may be made by those skilled in the art without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The scope of protection of the present invention should be construed according to the following claims, and all technical ideas within the scope of equivalents should be construed as falling within the scope of the present invention.

1: Gate driver 10: Negative voltage generator
20: Gate signal generator

Claims (6)

In an intelligent power module,
An IGBT operable to receive an input signal through a gate;
A negative voltage generator for generating a negative voltage using the PWM signal of the gate driver; And
And a gate signal output unit receiving a positive voltage supplied from an external power source and a negative voltage supplied from the negative voltage generator and outputting a gate input signal to the IGBT in accordance with the PWM signal of the gate driver;
Wherein the negative voltage generator includes a booster circuit part connected in parallel to a rear end of a resistor element connected to a PWM signal output terminal of the gate driver;
The booster circuit unit includes a three-terminal switching device controlled by receiving the PWM signal, a first node connected to one end of the switching device, a second node connected to the other end of the switching device to generate the negative voltage, A half-wave rectifier diode connected in parallel with the switching element between the first node and the second node and having an inductor and a DC power source connected in series, an N terminal connected to the first node and a P terminal connected to the ground terminal, And a capacitor connected between the P terminal of the diode and the second node.
delete delete The method according to claim 1,
Wherein the gate signal output unit includes a first switching device receiving a positive voltage supplied from the external power source and a second switching device coupled to the second node of the booster circuit unit and receiving a negative voltage, And receives the PWM signal to alternately switch the two switching elements to output the gate input signal.
5. The method of claim 4,
Wherein the first switching element comprises an N-channel MOSFET element and the second switching element comprises a P-channel MOSFET element.
A power supply driving module of an intelligent power module,
An IGBT operable to receive an input signal through a gate;
A negative voltage generator for generating a negative voltage using the PWM signal of the gate driver; And
And a gate signal output unit receiving a positive voltage supplied from an external power source, a negative voltage supplied from the negative voltage generator, and a PWM signal of the gate driver and outputting a gate input signal to the IGBT;
Wherein the negative voltage generator includes a booster circuit part connected in parallel to a rear end of a resistor element connected to a PWM signal output terminal of the gate driver;
The booster circuit unit includes a three-terminal switching device controlled by receiving the PWM signal, a first node connected to one end of the switching device, a second node connected to the other end of the switching device to generate the negative voltage, A half-wave rectifier diode connected in parallel with the switching element between the first node and the second node and having an inductor and a DC power source connected in series, an N terminal connected to the first node and a P terminal connected to the ground terminal, And a capacitor connected between the P terminal of the diode and the second node.
KR1020150081720A 2015-06-10 2015-06-10 Intelligent Power Module And Power Driving Module Thereof KR101758808B1 (en)

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Application Number Priority Date Filing Date Title
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KR101758808B1 true KR101758808B1 (en) 2017-07-19

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Publication number Priority date Publication date Assignee Title
CN109600025B (en) * 2017-09-30 2020-06-12 瀚薪科技股份有限公司 Intelligent power module capable of being driven by negative-pressure grid electrode
KR102028388B1 (en) * 2017-10-18 2019-10-07 한국전기연구원 Gate driving circuit and power switch control device comprising the same
KR102026929B1 (en) * 2018-05-17 2019-10-01 한국전기연구원 Gate driving circuit for power switch
KR102119405B1 (en) * 2019-04-10 2020-06-05 백종학 Power Supply Apparatus and driving method thereof
CN110380709B (en) * 2019-07-12 2021-08-27 浙江大学 High-speed grid pulse modulation circuit and radio frequency power amplifier
CN117081370B (en) * 2023-08-30 2024-04-02 海信家电集团股份有限公司 Intelligent power module IPM, control method and equipment

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011193705A (en) * 2010-03-17 2011-09-29 Hitachi Appliances Inc Gate drive circuit of voltage drive type semiconductor element and power converter
JP2013093970A (en) * 2011-10-25 2013-05-16 Fujitsu Ltd Control circuit and electronic apparatus using the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011193705A (en) * 2010-03-17 2011-09-29 Hitachi Appliances Inc Gate drive circuit of voltage drive type semiconductor element and power converter
JP2013093970A (en) * 2011-10-25 2013-05-16 Fujitsu Ltd Control circuit and electronic apparatus using the same

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