CN105322948A - Half-bridge drive circuit - Google Patents
Half-bridge drive circuit Download PDFInfo
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- CN105322948A CN105322948A CN201510726410.9A CN201510726410A CN105322948A CN 105322948 A CN105322948 A CN 105322948A CN 201510726410 A CN201510726410 A CN 201510726410A CN 105322948 A CN105322948 A CN 105322948A
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Abstract
The invention relates to a half-bridge drive circuit. The half-bridge drive circuit comprises an upper half-bridge drive signal amplification output circuit and a lower half-bridge drive signal amplification output circuit. The upper half-bridge drive signal amplification output circuit comprises an audion Q11H, an audion Q12H and an audion Q13H. The base terminal of the audion Q11H is connected with a control signal input end U+ through a current limiting resistor R12H. The collector terminal of the audion Q13H, the other end of a current limiting resistor R15 and the source terminal of a switch metal-oxide-semiconductor field effect transistor (MOSFET) tube Q15H are connected so as to form a drive circuit connecting end. The drain terminal of a switch MOSFET tube Q14H is connected with one end of a drive resistor R19H. The other end of the drive resistor R19H is connected with one end of a drive resistor R20H so as to form an upper half-bridge drive signal output end GUH. The half-bridge drive circuit has a compact structure, has a large drive current, meets the drive requirement of a half-bridge circuit, and is safe and reliable.
Description
Technical field
The present invention relates to a kind of circuit structure, especially a kind of half-bridge drive circuit, belongs to the technical field of half-bridge driven.
Background technology
Field-effect transistor (MOSFET), as high power switch and high-speed switching devices, is used widely, particularly Motor Control Field in power electronic technology.Drive in application at motor, field-effect transistor is through being commonly used to form half-bridge circuit, upper half-bridge transistors drain electrode wherein in half-bridge circuit is connected with bus power supply, the source electrode of upper plate bridge transistor is connected with the drain electrode of lower half-bridge transistors, the source electrode of lower half-bridge transistors is connected with Power Groud, and the output of half-bridge circuit is connected rear formation by the source terminal of upper half-bridge transistors with lower half-bridge transistors drain electrode end.Usually, the pwm signal that half-bridge circuit exports according to single-chip microcomputer carries out corresponding switch motion, but the pwm signal of single-chip microcomputer is often not enough to driving half field circuit, so need to set up half-bridge drive circuit, so that the pwm signal exported by single-chip microcomputer amplifies, reach the object driving half-bridge circuit.
As shown in Figure 1, be existing conventional half-bridge power circuit, described half-bridge power circuit comprises MOSFET half-bridge circuit 1, transistor drive circuit 2 and triode and drives boostrap circuit 3.Control signal input U+, the control signal input U-of transistor drive circuit 2 are connected respectively to Single Chip Microcomputer (SCM) PWM control interface, and the upper half-bridge drive singal output GUH on transistor drive circuit 2, lower half-bridge drive singal output GUL are all connected with MOSFET half-bridge circuit 1.Transistor drive circuit 2 receives the pwm control signal of single chip control unit, pwm control signal is loaded into the upper half-bridge MOSFET pipe Q4H of MOSFET half-bridge circuit 1 and lower half-bridge MOSFET pipe Q4L respectively after transistor drive circuit 2 carries out Current amplifier, works with driven MOS FET half-bridge circuit 1.The floating voltage that triode drives boostrap circuit 3 to provide flash to drive for transistor drive circuit 2, and triode drives boostrap circuit 3 and transistor drive circuit 2 to share low-tension supply input (12V ~ 15V).
MOSFET half-bridge circuit 1 comprises half-bridge circuit and lower half-bridge circuit, wherein goes up half-bridge circuit and comprises: upper half-bridge MOSFET pipe Q4H, driving resistance R8H, filter capacitor C3H and resistance R7H; Lower half-bridge circuit comprises: lower half-bridge MOSFET pipe Q4L, driving resistance R8L, filter capacitor C3L and resistance R7L.The drain electrode of upper half-bridge MOSFET pipe Q4H is connected with bus power supply VBAT, and the source electrode of upper half-bridge MOSFET pipe Q4H is connected with the drain electrode of lower half-bridge MOSFET pipe Q4L, and the source electrode of lower half-bridge MOSFET pipe Q4L is connected with Power Groud; The gate terminal of upper half-bridge MOSFET pipe Q4H is connected with driving one end of resistance R8H, drive the other end of resistance R8H to be connected with one end of resistance R7H and one end of filter capacitor C3H, the other end of resistance R7H and the other end of filter capacitor C3H are all connected with the source terminal of upper half-bridge MOSFET pipe Q4H.The gate terminal of lower half-bridge MOSFET pipe Q4L is connected with driving one end of resistance R8L, and drive the other end of resistance R8L to be connected with one end of resistance R7L and one end of filter capacitor C3L, the other end of resistance R7L and the other end of filter capacitor C3L all connect Power Groud.The source terminal of upper half-bridge MOSFET pipe Q4H connects Power Groud by pull down resistor R9.The source terminal of upper half-bridge MOSFET pipe Q4H and the drain electrode end of lower half-bridge MOSFET pipe Q4L are connected to form half-bridge circuit and export link, and the source terminal of upper half-bridge MOSFET pipe Q4H forms half-bridge floating ground end.
Transistor drive circuit 2 can adopt discrete electronic component to build, and also can select integrated driving chip, uses the schematic diagram of discrete component shown in Fig. 1.Transistor drive circuit 2 amplifies for pwm signal single chip control unit exported, and the drive singal after amplifying is flowed to MOSFET half-bridge circuit 1, is namely amplified pwm signal by the some triodes in transistor drive circuit 2.Upper half-bridge drive singal output GUH is connected with the gate terminal of upper half-bridge MOSFET pipe Q4H by driving resistance R8H, and lower half-bridge drive singal output GUL is connected with the gate terminal of lower half-bridge MOSFET pipe Q4L by driving resistance R8L.Low pressure input voltage on transistor drive circuit 2 is generally 12V ~ 15V.Triode drives boostrap circuit 3 to be made up of charging capacitor C2 and backward diode D2, and wherein backward diode D2 generally adopts fast recovery diode.The anode tap of backward diode D2 is connected with low voltage voltage, and the cathode terminal of backward diode D2 is connected with the anode of drive circuit 2 and charging capacitor C2.The negative terminal of charging capacitor C2 connects the drive circuit link of drive circuit 2, described drive circuit link and half-bridge circuit export link be connected after for the formation of motor phase line link.To be connected with the U of motor, drive circuit link and half-bridge circuit export link and are interconnected rear formation motor phase line link U, U in Fig. 1 is motor phase line link, and motor phase line link is interconnected to form by the drain electrode end of the negative terminal of charging capacitor C2 and the source terminal of upper half-bridge MOSFET pipe Q4H, lower half-bridge MOSFET pipe Q4L, the other end of resistance R7H, the other end of electric capacity C3L and pull down resistor R9.
Generally, due to the effect of the drive circuit link of drive circuit 2, the voltage causing half-bridge MOSFET pipe Q4H source terminal is floating, therefore, in driving during half-bridge MOSFET pipe Q4H, need to load on the grid of upper half-bridge MOSFET pipe Q4H one float and higher than the voltage of its source electrode, voltage is loaded into the gate terminal of upper half-bridge MOSFET pipe Q4H by upper half-bridge drive singal output GUH.During half-bridge MOSFET pipe Q4L conducting instantly, upper half-bridge floating ground end is on identical current potential with Power Groud, and low pressure input voltage (12V ~ 15V) identical (ignoring the forward voltage drop of diode D2) charges to charging capacitor C2.Instantly, when half-bridge MOSFET pipe Q4L closes, upper half-bridge floating ground terminal potential rises, and the current potential also corresponding rising of charging capacitor C2 anode, backward diode D2 oppositely ends, and prevent the electric charge in charging capacitor C2 from flowing backwards, now charging capacitor C2 is in discharge condition.When charging capacitor C2 starts to discharge, voltage required for half-bridge MOSFET pipe Q4H conducting is provided, the voltage difference at charging capacitor C2 two ends is low pressure input voltage, when upper half-bridge MOSFET pipe Q4H does not still have conducting, the voltage of charging capacitor C2 anode is the voltage that low pressure input voltage (12V ~ 15V) adds half-bridge MOSFET pipe Q4H source electrode, when after upper half-bridge MOSFET pipe Q4H conducting, the voltage of charging capacitor C2 anode is voltage and busbar voltage that low pressure input voltage (12V ~ 15V) adds Q4H source electrode.Due to the consumption of quiescent current, need to charge in time, during half-bridge MOSFET pipe Q4L conducting instantly, charging capacitor C2 just can charge, to ensure that upper half-bridge MOSFET pipe Q4H can open smoothly.
To sum up, the driving force of existing drive circuit 2 pairs of MOSFET half-bridge circuits 1 is poor, and the MOSFET half-bridge circuit that cannot meet relatively high power drives requirement effectively reliably.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art (transistor drive circuit driving force is weak), provide a kind of half-bridge drive circuit, its compact conformation, drive current is large, guarantees the driving requirement meeting high-power half bridge circuit, safe and reliable.
According to technical scheme provided by the invention, described half-bridge drive circuit, comprise half-bridge drive singal amplification output circuit and lower half-bridge drive singal amplification output circuit, described upper half-bridge drive singal amplification output circuit comprises triode Q11H, triode Q12H and triode Q13H; The base terminal of described triode Q11H is connected with one end of current-limiting resistance R12H, the other end of current-limiting resistance R12H is connected with one end of one end of pull-up resistor R11H, filter capacitor C11H, the other end ground connection of described filter capacitor C11H, the other end of pull-up resistor R11H is connected with the first voltage, and the other end of current-limiting resistance R12 is also connected with control signal input U+;
The emitter of triode Q11H is by divider resistance R13H ground connection, the collector terminal of triode Q11H is connected with the base terminal of one end of divider resistance R14H and triode Q12H, the other end of described divider resistance R14 is connected with boostrap circuit, the collector terminal of triode Q12H is connected with one end of the anode tap of reverse protection diode D11H, the base terminal of triode Q13H and current-limiting resistance R15H respectively, and the emitter terminal of triode Q12H is connected with one end of the other end of divider resistance R14, current-limiting resistance R18H and the source terminal of switch MOS FET pipe Q14H;
The other end of current-limiting resistance R18H and one end of current-limiting resistance R17H, the gate terminal of switch MOS FET pipe Q14H and the gate terminal of switch MOS FET pipe Q15H connect, the other end of current-limiting resistance R17H is connected with the emitter terminal of one end of current-limiting resistance R16H and triode Q13H, the other end of current-limiting resistance R16H is connected with the cathode terminal of reverse protection diode D11H, the collector terminal of triode Q13H, the other end of current-limiting resistance R15H is all connected with the source terminal of switch MOS FET pipe Q15H, and the collector terminal of triode Q13H, the other end of current-limiting resistance R15 and the source terminal of switch MOS FET pipe Q15H are interconnected rear formation drive circuit link,
The drain electrode end of switch MOS FET pipe Q14H is connected with driving one end of resistance R19H, the other end of resistance R19H is driven to be connected with driving one end of resistance R20H, drive the other end of resistance R20H to be connected with the drain electrode end of switch MOS FET pipe Q15H, and drive the other end of resistance R19H to be interconnected half-bridge drive singal output GUH in rear formation with driving one end of resistance R20H.
Described first voltage is 3.3V voltage, and triode Q11H is NPN triode, and triode Q12H and triode Q13H is PNP triode.
Described boostrap circuit comprises backward diode D12 and electrochemical capacitor C12, the anode tap of described backward diode D12 is connected with the second voltage, the emitter terminal of the cathode terminal of backward diode D12 and the other end of divider resistance R14, triode Q12H, the source terminal of switch MOS FET pipe Q14H and the anode of electrochemical capacitor C12 are connected, and the negative terminal of electrochemical capacitor C12 is connected with motor phase line link.
Described lower half-bridge drive singal amplification output circuit comprises triode Q11L, triode Q12L and triode Q13L; The base terminal of described triode Q11L is connected with driving one end of resistance R12L, the other end of resistance R12L is driven to be connected with one end of pull-up resistor R11L and one end of filter capacitor C11L, the other end ground connection of filter capacitor C11L, the other end of pull-up resistor R11L is connected with tertiary voltage, and drives the other end of resistance R12L to be also connected with control signal input U-;
The emitter terminal of triode Q11L is by divider resistance R13L ground connection, the collector terminal of triode Q11L is connected with the base terminal of one end of divider resistance R14L and triode Q12L, the other end of divider resistance R14L and the emitter terminal of triode Q12L, one end of current-limiting resistance R18L, the source terminal of switch MOS FET pipe Q14L and the 4th voltage connect, the collector terminal of triode Q12L and the anode tap of reverse protection diode D11L, the base terminal of triode Q13L and one end of current-limiting resistance R15L connect, the other end of current-limiting resistance R15 and the equal ground connection of emitter terminal of triode Q13L, the cathode terminal of reverse protection diode D11L is connected with one end of current-limiting resistance R16L, one end of the other end current-limiting resistance R17L of current-limiting resistance R16L, the emitter terminal of triode Q13L connects, the other end of current-limiting resistance R17L and the other end of current-limiting resistance R18L, the gate terminal of switch MOS FET pipe Q14L and the gate terminal of switch MOS FET pipe Q15L connect,
The drain electrode end of switch MOS FET pipe Q14L is connected with driving one end of resistance R19L, the other end of resistance R19L is driven to be connected with driving one end of resistance R20L, and drive the other end of resistance R19L to be interconnected half-bridge drive singal output GUL under rear formation with driving one end of resistance R20L, the other end of resistance R20L is driven to be connected with the drain electrode end of switch MOS FET pipe Q15L, the source terminal ground connection of switch MOS FET pipe Q15L.
Described tertiary voltage is 3.3V, and the 4th voltage is 12V ~ 15V.
Advantage of the present invention: MOSFET tube drive circuit is larger than the drive current of existing transistor drive circuit, and drive current is large, guarantees the driving requirement meeting high-power half bridge circuit, safe and reliable.
Accompanying drawing explanation
Fig. 1 is existing half-bridge drive circuit.
Fig. 2 is use circuit theory diagrams of the present invention.
Description of reference numerals: 1-MOSFET half-bridge circuit, 2-transistor drive circuit, 3-triode drive boostrap circuit, 10-half-bridge circuit, 20-MOSFET tube drive circuit and 30-boostrap circuit.
Embodiment
Below in conjunction with concrete drawings and Examples, the invention will be further described.
As shown in Figure 2: in order to realize effectively driving half-bridge circuit 10, guarantee the reliability that half-bridge circuit 10 works, the present invention includes half-bridge drive singal amplification output circuit and lower half-bridge drive singal amplification output circuit, described upper half-bridge drive singal amplification output circuit comprises triode Q11H, triode Q12H and triode Q13H; The base terminal of described triode Q11H is connected with one end of current-limiting resistance R12H, the other end of current-limiting resistance R12H is connected with one end of one end of pull-up resistor R11H, filter capacitor C11H, the other end ground connection of described filter capacitor C11H, the other end of pull-up resistor R11H is connected with the first voltage, and the other end of current-limiting resistance R12 is also connected with control signal input U+;
The emitter of triode Q11H is by divider resistance R13H ground connection, the collector terminal of triode Q11H is connected with the base terminal of one end of divider resistance R14H and triode Q12H, the other end of described divider resistance R14 is connected with boostrap circuit 30, the collector terminal of triode Q12H is connected with one end of the anode tap of reverse protection diode D11H, the base terminal of triode Q13H and current-limiting resistance R15H respectively, and the emitter terminal of triode Q12H is connected with one end of the other end of divider resistance R14, current-limiting resistance R18H and the source terminal of switch MOS FET pipe Q14H;
The other end of current-limiting resistance R18H and one end of current-limiting resistance R17H, the gate terminal of switch MOS FET pipe Q14H and the gate terminal of switch MOS FET pipe Q15H connect, the other end of current-limiting resistance R17H is connected with the emitter terminal of one end of current-limiting resistance R16H and triode Q13H, the other end of current-limiting resistance R16H is connected with the cathode terminal of reverse protection diode D11H, the collector terminal of triode Q13H, the other end of current-limiting resistance R15H is all connected with the source terminal of switch MOS FET pipe Q15H, and the collector terminal of triode Q13H, the other end of current-limiting resistance R15 and the source terminal of switch MOS FET pipe Q15H are interconnected rear formation drive circuit link,
The drain electrode end of switch MOS FET pipe Q14H is connected with driving one end of resistance R19H, the other end of resistance R19H is driven to be connected with driving one end of resistance R20H, drive the other end of resistance R20H to be connected with the drain electrode end of switch MOS FET pipe Q15H, and drive the other end of resistance R19H to be interconnected half-bridge drive singal output GUH in rear formation with driving one end of resistance R20H.
Described lower half-bridge drive singal amplification output circuit comprises triode Q11L, triode Q12L and triode Q13L; The base terminal of described triode Q11L is connected with driving one end of resistance R12L, the other end of resistance R12L is driven to be connected with one end of pull-up resistor R11L and one end of filter capacitor C11L, the other end ground connection of filter capacitor C11L, the other end of pull-up resistor R11L is connected with tertiary voltage, and drives the other end of resistance R12L to be also connected with control signal input U-;
The emitter terminal of triode Q11L is by divider resistance R13L ground connection, the collector terminal of triode Q11L is connected with the base terminal of one end of divider resistance R14L and triode Q12L, the other end of divider resistance R14L and the emitter terminal of triode Q12L, one end of current-limiting resistance R18L, the source terminal of switch MOS FET pipe Q14L and the 4th voltage connect, the collector terminal of triode Q12L and the anode tap of reverse protection diode D11L, the base terminal of triode Q13L and one end of current-limiting resistance R15L connect, the other end of current-limiting resistance R15 and the equal ground connection of emitter terminal of triode Q13L, the cathode terminal of reverse protection diode D11L is connected with one end of current-limiting resistance R16L, one end of the other end current-limiting resistance R17L of current-limiting resistance R16L, the emitter terminal of triode Q13L connects, the other end of current-limiting resistance R17L and the other end of current-limiting resistance R18L, the gate terminal of switch MOS FET pipe Q14L and the gate terminal of switch MOS FET pipe Q15L connect,
The drain electrode end of switch MOS FET pipe Q14L is connected with driving one end of resistance R19L, the other end of resistance R19L is driven to be connected with driving one end of resistance R20L, and drive the other end of resistance R19L to be interconnected half-bridge drive singal output GUL under rear formation with driving one end of resistance R20L, the other end of resistance R20L is driven to be connected with the drain electrode end of switch MOS FET pipe Q15L, the source terminal ground connection of switch MOS FET pipe Q15L.
Particularly, described tertiary voltage is 3.3V, and the 4th voltage is 12V ~ 15V.Described first voltage is 3.3V voltage, and the second voltage is 12V ~ 15V.Triode Q11H is NPN triode, and triode Q12H and triode Q13H is PNP triode.Triode Q11L is NPN triode, and triode Q12L and triode Q13L is PNP triode.
Described boostrap circuit 30 comprises backward diode D12 and electrochemical capacitor C12, the anode tap of described backward diode D12 is connected with the second voltage, the emitter terminal of the cathode terminal of backward diode D12 and the other end of divider resistance R14, triode Q12H, the source terminal of switch MOS FET pipe Q14H and the anode of electrochemical capacitor C12 are connected, and the negative terminal of electrochemical capacitor C12 is connected with motor phase line link.
In the embodiment of the present invention, upper half-bridge drive singal amplification output circuit and upper half-bridge drive singal amplification output circuit form MOSFET drive circuit 20.Half-bridge circuit 10 comprises half-bridge circuit and lower half-bridge circuit, wherein, upper half-bridge circuit comprises half-bridge MOSFET pipe Q16H, the gate terminal of described upper half-bridge MOSFET pipe Q16H is connected with driving one end of resistance R22H, drive the other end of resistance R22H and the one end driving resistance R21H, one end of filter capacitor C12H connects, and drive the other end of resistance R22H to be also connected with upper half-bridge drive singal output GUH, the drain electrode end of upper half-bridge MOSFET pipe Q16H is connected with busbar voltage VBAT, the other end of resistance R21H and the other end of filter capacitor C12H is driven all to be connected with the drain electrode end of upper half-bridge MOSFET pipe Q16H, and the drain electrode end of upper half-bridge MOSFET pipe Q16H is also connected with one end of pull down resistor R23, another termination Power Groud of pull down resistor R23.
Lower half-bridge circuit comprises lower half-bridge MOSFET pipe Q16L, the gate terminal of described lower half-bridge MOSFET pipe Q16L is connected with driving one end of resistance R22L, drive the other end of resistance R22L to be connected with one end of one end and filter capacitor C12L of driving resistance R21L, and drive the other end of resistance R22L to be also connected with lower half-bridge drive singal output GUL.The other end of resistance R22L, the other end of filter capacitor C12L and the source terminal of lower half-bridge MOSFET pipe Q16L is driven all to connect Power Groud.
Form half-bridge circuit after the source terminal of upper half-bridge MOSFET pipe Q16H is connected with one end of the drain electrode end of lower half-bridge MOSFET pipe Q16L, the other end of resistance R21H, the other end of filter capacitor C21H and pull down resistor R23 and export link, the drive circuit link that described half-bridge circuit exports in link and MOSFET drive circuit 20 is interconnected rear formation motor phase line link, when being connected by half-bridge circuit 10 and controlled motor, motor phase terminal is used for being connected with the phase line end of motor.
During specific works, received the pwm control signal of input by control signal input U+, control signal input U-; When making the upper half-bridge MOSFET pipe Q16H conducting in half-bridge circuit 10, then control signal input U+ receives low level, and control signal input U-receives high level.And when control signal input U+ receives low level, triode Q11H, triode Q12H are all in cut-off state, and triode Q13H conducting, thus make switch MOS FET pipe Q14H conducting, second voltage is powered to the upper half-bridge MOSFET pipe Q16H of half-bridge circuit 10 by switch MOS FET pipe Q14H, makes half-bridge MOSFET pipe Q16H conducting.
In contrast, when control signal input U-is high level, triode Q11L, the equal conducting of triode Q12L, triode Q13L ends, thus switch MOS FET pipe Q14L is ended, the lower half-bridge MOSFET pipe Q16L that 4th voltage cannot be supplied in half-bridge circuit 10 powers, and lower half-bridge MOSFET pipe Q16L is ended.
When making the lower half-bridge MOSFET pipe Q16L conducting of half-bridge circuit 10, then control signal input U+ receives high level, and control signal input U-receives low level.When control signal input U+ receives high level, triode Q11H, triode Q12H conducting, triode Q13H ends, thus switch MOS FET pipe Q14H is ended, the upper half-bridge MOSFET pipe Q16H that second voltage cannot be supplied to half-bridge circuit 10 powers, and half-bridge MOSFET pipe Q16H is ended, in contrast, when control signal input U-is low level, triode Q11L, triode Q12L ends, triode Q13L conducting, thus make switch MOS FET pipe Q14L conducting, 4th voltage is powered to the lower half-bridge MOSFET pipe Q16L of half-bridge circuit 10 by switch MOS FET pipe Q14L, make lower half-bridge MOSFET pipe Q16L conducting, after the MOSFET pipe Q16L conducting second half, the source electrode of upper half-bridge MOSFET pipe Q16H equals to receive Power Groud, at this moment, second voltage is charged to charging capacitor C12 by D12 backward diode, for upper half-bridge MOSFET pipe Q16H conducting is prepared.
The various embodiments described above are only for illustration of the present invention; wherein the structure, connected mode etc. of each parts all can change to some extent; every equivalent variations of carrying out on the basis of technical solution of the present invention and improvement, all should not get rid of outside protection scope of the present invention.
Claims (5)
1. a half-bridge drive circuit, comprise half-bridge drive singal amplification output circuit and lower half-bridge drive singal amplification output circuit, it is characterized in that: described upper half-bridge drive singal amplification output circuit comprises triode Q11H, triode Q12H and triode Q13H; The base terminal of described triode Q11H is connected with one end of current-limiting resistance R12H, the other end of current-limiting resistance R12H is connected with one end of one end of pull-up resistor R11H, filter capacitor C11H, the other end ground connection of described filter capacitor C11H, the other end of pull-up resistor R11H is connected with the first voltage, and the other end of current-limiting resistance R12 is also connected with control signal input U+;
The emitter of triode Q11H is by divider resistance R13H ground connection, the collector terminal of triode Q11H is connected with the base terminal of one end of divider resistance R14H and triode Q12H, the other end of described divider resistance R14 is connected with boostrap circuit (30), the collector terminal of triode Q12H is connected with one end of the anode tap of reverse protection diode D11H, the base terminal of triode Q13H and current-limiting resistance R15H respectively, and the emitter terminal of triode Q12H is connected with one end of the other end of divider resistance R14, current-limiting resistance R18H and the source terminal of switch MOS FET pipe Q14H;
The other end of current-limiting resistance R18H and one end of current-limiting resistance R17H, the gate terminal of switch MOS FET pipe Q14H and the gate terminal of switch MOS FET pipe Q15H connect, the other end of current-limiting resistance R17H is connected with the emitter terminal of one end of current-limiting resistance R16H and triode Q13H, the other end of current-limiting resistance R16H is connected with the cathode terminal of reverse protection diode D11H, the collector terminal of triode Q13H, the other end of current-limiting resistance R15H is all connected with the source terminal of switch MOS FET pipe Q15H, and the collector terminal of triode Q13H, the other end of current-limiting resistance R15 and the source terminal of switch MOS FET pipe Q15H are interconnected rear formation drive circuit link,
The drain electrode end of switch MOS FET pipe Q14H is connected with driving one end of resistance R19H, the other end of resistance R19H is driven to be connected with driving one end of resistance R20H, drive the other end of resistance R20H to be connected with the drain electrode end of switch MOS FET pipe Q15H, and drive the other end of resistance R19H to be interconnected half-bridge drive singal output GUH in rear formation with driving one end of resistance R20H.
2. half-bridge drive circuit according to claim 1, is characterized in that: described first voltage is 3.3V voltage, and triode Q11H is NPN triode, and triode Q12H and triode Q13H is PNP triode.
3. half-bridge drive circuit according to claim 1, it is characterized in that: described boostrap circuit (30) comprises backward diode D12 and electrochemical capacitor C12, the anode tap of described backward diode D12 is connected with the second voltage, the emitter terminal of the cathode terminal of backward diode D12 and the other end of divider resistance R14, triode Q12H, the source terminal of switch MOS FET pipe Q14H and the anode of electrochemical capacitor C12 are connected, and the negative terminal of electrochemical capacitor C12 is connected with motor phase line link.
4. half-bridge drive circuit according to claim 1, is characterized in that: described lower half-bridge drive singal amplification output circuit comprises triode Q11L, triode Q12L and triode Q13L; The base terminal of described triode Q11L is connected with driving one end of resistance R12L, the other end of resistance R12L is driven to be connected with one end of pull-up resistor R11L and one end of filter capacitor C11L, the other end ground connection of filter capacitor C11L, the other end of pull-up resistor R11L is connected with tertiary voltage, and drives the other end of resistance R12L to be also connected with control signal input U-;
The emitter terminal of triode Q11L is by divider resistance R13L ground connection, the collector terminal of triode Q11L is connected with the base terminal of one end of divider resistance R14L and triode Q12L, the other end of divider resistance R14L and the emitter terminal of triode Q12L, one end of current-limiting resistance R18L, the source terminal of switch MOS FET pipe Q14L and the 4th voltage connect, the collector terminal of triode Q12L and the anode tap of reverse protection diode D11L, the base terminal of triode Q13L and one end of current-limiting resistance R15L connect, the other end of current-limiting resistance R15 and the equal ground connection of emitter terminal of triode Q13L, the cathode terminal of reverse protection diode D11L is connected with one end of current-limiting resistance R16L, one end of the other end current-limiting resistance R17L of current-limiting resistance R16L, the emitter terminal of triode Q13L connects, the other end of current-limiting resistance R17L and the other end of current-limiting resistance R18L, the gate terminal of switch MOS FET pipe Q14L and the gate terminal of switch MOS FET pipe Q15L connect,
The drain electrode end of switch MOS FET pipe Q14L is connected with driving one end of resistance R19L, the other end of resistance R19L is driven to be connected with driving one end of resistance R20L, and drive the other end of resistance R19L to be interconnected half-bridge drive singal output GUL under rear formation with driving one end of resistance R20L, the other end of resistance R20L is driven to be connected with the drain electrode end of switch MOS FET pipe Q15L, the source terminal ground connection of switch MOS FET pipe Q15L.
5. half-bridge drive circuit according to claim 4, is characterized in that: described tertiary voltage is 3.3V, and the 4th voltage is 12V ~ 15V.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510726410.9A CN105322948B (en) | 2015-10-30 | 2015-10-30 | Half-bridge drive circuit |
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| CN201510726410.9A CN105322948B (en) | 2015-10-30 | 2015-10-30 | Half-bridge drive circuit |
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| CN105322948A true CN105322948A (en) | 2016-02-10 |
| CN105322948B CN105322948B (en) | 2018-07-27 |
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| CN201510726410.9A Active CN105322948B (en) | 2015-10-30 | 2015-10-30 | Half-bridge drive circuit |
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| CN (1) | CN105322948B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106208637A (en) * | 2016-09-12 | 2016-12-07 | 中国矿业大学 | A kind of drive circuit of switched reluctance machines MOSFET power inverter |
| CN106655867A (en) * | 2017-02-24 | 2017-05-10 | 常熟理工学院 | Half-bridge driving circuit formed by discrete MOSFET |
| CN110401330A (en) * | 2019-06-20 | 2019-11-01 | 浙江亚特电器有限公司 | A kind of driving circuit for MOSFET driving |
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| CN203840191U (en) * | 2014-04-24 | 2014-09-17 | 科博达技术有限公司 | MOSFET half bridge drive circuit |
| CN205051676U (en) * | 2015-10-30 | 2016-02-24 | 无锡新洁能股份有限公司 | Half -bridge drive circuit |
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| US20120081149A1 (en) * | 2010-09-30 | 2012-04-05 | Fuji Electric Co., Ltd. | Level shift circuit |
| US20130200926A1 (en) * | 2010-10-18 | 2013-08-08 | Sharp Kabushiki Kaisha | Driver circuit |
| CN103683872A (en) * | 2012-09-11 | 2014-03-26 | 深圳市海洋王照明工程有限公司 | Half-bridge driving circuit |
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| CN205051676U (en) * | 2015-10-30 | 2016-02-24 | 无锡新洁能股份有限公司 | Half -bridge drive circuit |
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|---|---|---|---|---|
| CN106208637A (en) * | 2016-09-12 | 2016-12-07 | 中国矿业大学 | A kind of drive circuit of switched reluctance machines MOSFET power inverter |
| CN106208637B (en) * | 2016-09-12 | 2019-07-02 | 中国矿业大学 | A kind of driving circuit of switched reluctance machines MOSFET power inverter |
| CN106655867A (en) * | 2017-02-24 | 2017-05-10 | 常熟理工学院 | Half-bridge driving circuit formed by discrete MOSFET |
| CN110401330A (en) * | 2019-06-20 | 2019-11-01 | 浙江亚特电器有限公司 | A kind of driving circuit for MOSFET driving |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105322948B (en) | 2018-07-27 |
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