CN105322948B - Half-bridge drive circuit - Google Patents
Half-bridge drive circuit Download PDFInfo
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- CN105322948B CN105322948B CN201510726410.9A CN201510726410A CN105322948B CN 105322948 B CN105322948 B CN 105322948B CN 201510726410 A CN201510726410 A CN 201510726410A CN 105322948 B CN105322948 B CN 105322948B
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Abstract
The present invention relates to half-bridge drive circuits comprising above half-bridge drive signal amplification output circuit and lower half-bridge drive signal amplification output circuit, upper half-bridge drive signal amplification output circuit include triode Q11H, triode Q12H, triode Q13H；The base terminal of triode Q11H is connect by current-limiting resistance R12H with control signal input U+；The source terminal of the collector terminal of triode Q13H, the other end of current-limiting resistance R15 and switch MOSFET pipes Q15H forms driving circuit connecting pin after being connected with each other；The drain electrode end of switch MOSFET pipes Q14H is connect with one end of driving resistance R19H, and upper half-bridge driving signal output end GUH is formed after driving resistance, the other end of 19H and one end of driving resistance R20H to be connected with each other.Structure of the invention is compact, and driving current is big, it is ensured that meets the driving requirement of half-bridge circuit, securely and reliably.
Description
Technical field
The present invention relates to a kind of circuit structure, especially a kind of half-bridge drive circuit belongs to the technical field of half-bridge driven.
Background technology
Field-effect transistor（MOSFET）As high power switch and high-speed switching devices, obtained in power electronic technique
Extensive use, especially Motor Control Field.In motor driving application, field-effect transistor is often used in composition half-bridge electricity
Road, the upper half-bridge transistors drain electrode wherein in half-bridge circuit are connect with busbar power supply, the source electrode of upper plate bridge transistor and lower half-bridge
The drain electrode of transistor is connected, and the source electrode of lower half-bridge transistors is connected with Power Groud, and the output end of half-bridge circuit is by upper half-bridge crystal
The source terminal of pipe is formed after being connect with lower half-bridge transistors drain electrode end.Usually, half-bridge circuit is believed according to the PWM that microcontroller exports
Number corresponding switch motion is carried out, but the pwm signal of microcontroller is often not enough to half field circuit of driving, so needing to add half
Bridge driving circuit achievees the purpose that drive half-bridge circuit so as to the pwm signal amplification for exporting microcontroller.
As shown in Figure 1, being existing common half-bridge power circuit, the half-bridge power circuit includes MOSFET half-bridge circuits
1, transistor drive circuit 2 and triode drive boostrap circuit 3.The control signal input U+ of transistor drive circuit 2, control
Signal input part U- is connected respectively to SCM PWM control interface, the upper half-bridge drive signal output on transistor drive circuit 2
End GUH, lower half-bridge driving signal output end GUL are connected with MOSFET half-bridge circuits 1.Transistor drive circuit 2 receives monolithic
The pwm control signal of machine control unit, pwm control signal are loaded into respectively after transistor drive circuit 2 carries out Current amplifier
The upper half-bridge MOSFET pipes Q4H of MOSFET half-bridge circuits 1 and lower half-bridge MOSFET pipe Q4L, to drive MOSFET half-bridge circuits 1
Work.Triode driving boostrap circuit 3 is the floating voltage that transistor drive circuit 2 provides flash driving, and triode drives
Dynamic boostrap circuit 3 shares low-tension supply input terminal with transistor drive circuit 2（12V~15V）.
MOSFET half-bridge circuits 1 include upper half-bridge circuit and lower half-bridge circuit, wherein upper half-bridge circuit includes：Upper half-bridge
MOSFET pipes Q4H, driving resistance R8H, filter capacitor C3H and resistance R7H；Lower half-bridge circuit includes：Lower half-bridge MOSFET pipes
Q4L, driving resistance R8L, filter capacitor C3L and resistance R7L.The drain electrode of upper half-bridge MOSFET pipes Q4H and busbar power supply VBAT phases
Even, the source electrode of upper half-bridge MOSFET pipes Q4H is connected with the drain electrode of lower half-bridge MOSFET pipes Q4L, the source of lower half-bridge MOSFET pipes Q4L
Pole is connected with Power Groud；The gate terminal of upper half-bridge MOSFET pipes Q4H is connect with one end of driving resistance R8H, driving resistance R8H's
The other end is connect with one end of one end of resistance R7H and filter capacitor C3H, the other end and filter capacitor C3H of resistance R7H
The other end connect with the source terminal of upper half-bridge MOSFET pipes Q4H.The gate terminal of lower half-bridge MOSFET pipes Q4L and driving resistance
One end of R8L connects, and the other end of driving resistance R8L is connect with one end of one end of resistance R7L and filter capacitor C3L, electricity
The other end of the other end and filter capacitor C3L that hinder R7L connects Power Groud.The source terminal of upper half-bridge MOSFET pipes Q4H passes through
Pull down resistor R9 connects Power Groud.The source terminal of upper half-bridge MOSFET pipes Q4H connect shape with the drain electrode end of lower half-bridge MOSFET pipes Q4L
Connecting pin is exported at half-bridge circuit, and the source terminal of upper half-bridge MOSFET pipes Q4H forms half-bridge floating ground end.
Transistor drive circuit 2 may be used discrete electronic component and build, and can also select integrated driving chip, figure
Schematic diagram using discrete component is shown in 1.The pwm signal that transistor drive circuit 2 is used to export single chip control unit
It is amplified, and amplified drive signal is conveyed to MOSFET half-bridge circuits 1, i.e., by transistor drive circuit 2
Several triodes are amplified pwm signal.Upper half-bridge driving signal output end GUH is by driving resistance R8H and upper half-bridge
The gate terminal of MOSFET pipes Q4H is connected, and lower half-bridge driving signal output end GUL is by driving resistance R8L and lower half-bridge MOSFET
The gate terminal of pipe Q4L is connected.Low pressure input voltage on transistor drive circuit 2 is usually 12V ~ 15V.Triode driving bootstrapping
Circuit 3 is made of charging capacitor C2 and backward dioded D2, and wherein backward dioded D2 generally uses fast recovery diode.Instead
It is connect to the anode tap of diode D2 with low voltage, cathode terminal and driving circuit 2 and the charging capacitor of backward dioded D2
The anode of C2 connects.The driving circuit connecting pin of the negative terminal connection driving circuit 2 of charging capacitor C2, the driving circuit connecting pin
It is used to form motor phase line connecting pin after being connect with half-bridge circuit output connecting pin.By taking the U with motor is connected as an example, driving electricity
It is motor phase that road connecting pin forms the U in motor phase line connecting pin U, Fig. 1 after being connected with each other with half-bridge circuit output connecting pin
Line connecting pin, motor phase line connecting pin is by the negative terminal of charging capacitor C2 and source terminal, the lower half-bridge of upper half-bridge MOSFET pipes Q4H
The drain electrode end of MOSFET pipes Q4L, the other end of resistance R7H, the other end of capacitance C3L and pull down resistor R9 are connected with each other shape
At.
Under normal circumstances, due to the effect of the driving circuit connecting pin of driving circuit 2, lead to half-bridge MOSFET pipes Q4H
The voltage of source terminal is to float, and therefore, in driving when half-bridge MOSFET pipe Q4H, needs the grid in upper half-bridge MOSFET pipes Q4H
Extremely upper to load a voltage floating and higher than its source electrode, voltage is loaded into upper half by upper half-bridge driving signal output end GUH
The gate terminal of bridge MOSFET pipes Q4H.Instantly when half-bridge MOSFET pipes Q4L is connected, upper half-bridge floating ground end is in phase with Power Groud
On same current potential, low pressure input voltage（12V~15V）It is identical（Ignore the forward voltage drop of diode D2）Charging capacitor C2 is carried out
Charging.Instantly when half-bridge MOSFET pipes Q4L is closed, upper half-bridge floating ground terminal potential rises, the current potential of charging capacitor C2 anodes
Corresponding to rise, backward dioded D2 reversely ends, and prevents the charge in charging capacitor C2 from flowing backwards, and charging capacitor C2 is in and puts at this time
Electricity condition.When charging capacitor C2 starts electric discharge, half-bridge MOSFET pipes Q4H is provided, required voltage, charging capacitor is connected
The voltage difference at the both ends C2 is low pressure input voltage, when upper half-bridge MOSFET pipes Q4H is still not turned on, charging capacitor C2 anodes
Voltage be low pressure input voltage（12V~15V）In addition the voltage of upper half-bridge MOSFET pipes Q4H source electrodes, when upper half-bridge MOSFET is managed
After Q4H conductings, the voltage of charging capacitor C2 anodes is low pressure input voltage（12V~15V）In addition voltage, that is, busbar of Q4H source electrodes
Voltage.Due to the consumption of quiescent current, need to charge in time, when half-bridge MOSFET pipes Q4L is connected instantly, charging capacitor C2 ability
It charges, to ensure that upper half-bridge MOSFET pipes Q4H can be opened smoothly.
To sum up, existing driving circuit 2 is poor to the driving capability of MOSFET half-bridge circuits 1, cannot be satisfied relatively high power
Effectively reliably driving requires MOSFET half-bridge circuits.
Invention content
The purpose of the present invention is overcome the deficiencies in the prior art（Transistor drive circuit driving capability is weak）, provide
A kind of half-bridge drive circuit, compact-sized, driving current is big, it is ensured that meets the driving requirement of high-power half bridge circuit, safety
Reliably.
According to technical solution provided by the invention, the half-bridge drive circuit, including the amplification output of upper half-bridge drive signal
Circuit and lower half-bridge drive signal amplification output circuit, the upper half-bridge drive signal amplification output circuit includes triode
Q11H, triode Q12H and triode Q13H；The base terminal of the triode Q11H is connect with one end of current-limiting resistance R12H,
The other end of current-limiting resistance R12H is connect with one end of one end of pull-up resistor R11H, filter capacitor C11H, the filter capacitor
The other end of C11H is grounded, and the other end of pull-up resistor R11H is connect with first voltage, and the other end of current-limiting resistance R12 also with
Control signal input U+ connections；
The emitter of triode Q11H is grounded by divider resistance R13H, the collector terminal and divider resistance of triode Q11H
One end of R14H and the base terminal connection of triode Q12H, the other end of the divider resistance R14 are connect with boostrap circuit, and three
The collector terminal of pole pipe Q12H respectively with the anode tap of reverse protection diode D11H, the base terminal and current limliting of triode Q13H
The one of one end connection of resistance R15H, the emitter terminal of triode Q12H and the other end of divider resistance R14, current-limiting resistance R18H
The connection of the source terminal of end and switch MOSFET pipes Q14H；
The other end of current-limiting resistance R18H and one end of current-limiting resistance R17H, switch MOSFET pipes Q14H gate terminal and
The gate terminal of switch MOSFET pipes Q15H connects, the other end of current-limiting resistance R17H and one end of current-limiting resistance R16H and three poles
The emitter terminal of pipe Q13H connects, and the other end of current-limiting resistance R16H is connect with the cathode terminal of reverse protection diode D11H, and three
The collector terminal of pole pipe Q13H, the other end of current-limiting resistance R15H are connect with the source terminal of switch MOSFET pipes Q15H, and three
After the source terminal of the collector terminal of pole pipe Q13H, the other end of current-limiting resistance R15 and switch MOSFET pipes Q15H is connected with each other
Form driving circuit connecting pin；
The drain electrode end of switch MOSFET pipes Q14H is connect with one end of driving resistance R19H, the other end of driving resistance R19H
It being connect with one end of driving resistance R20H, the other end of driving resistance R20H is connect with the drain electrode end of switch MOSFET pipes Q15H,
And form upper half-bridge driving signal output end after driving the other end of resistance R19H and one end of driving resistance R20H to be connected with each other
GUH。
The first voltage is 3.3V voltages, and triode Q11H is NPN triode, triode Q12H and triode Q13H
For PNP triode.
The boostrap circuit includes backward dioded D12 and electrolytic capacitor C12, the anode of the backward dioded D12
End is connect with second voltage, the transmitting of the cathode terminal of backward dioded D12 and the other end, triode Q12H of divider resistance R14
Extremely, the anode of the source terminal of switch MOSFET pipes Q14H and electrolytic capacitor C12 connect, negative terminal and the electricity of electrolytic capacitor C12
Machine phase line connecting pin connects.
The lower half-bridge drive signal amplification output circuit includes triode Q11L, triode Q12L and triode
Q13L；The base terminal of the triode Q11L connect with one end of driving resistance R12L, drive the other end of resistance R12L with it is upper
One end of pull-up resistor R11L and one end connection of filter capacitor C11L, the other end ground connection of filter capacitor C11L, pull-up resistor
The other end of R11L is connect with tertiary voltage, and the other end of resistance R12L is driven also to be connect with control signal input U-；
The emitter terminal of triode Q11L is grounded by divider resistance R13L, collector terminal and the partial pressure electricity of triode Q11L
Hinder one end of R14L and the base terminal connection of triode Q12L, the transmitting of the other end and triode Q12L of divider resistance R14L
Extremely, one end of current-limiting resistance R18L, the source terminal of switch MOSFET pipes Q14L and the connection of the 4th voltage, triode Q12L's
Anode tap, the base terminal of triode Q13L and one end of current-limiting resistance R15L of collector terminal and reverse protection diode D11L
Connection, the other end of current-limiting resistance R15 and the emitter terminal of triode Q13L are grounded, the moon of reverse protection diode D11L
It is extremely connect with one end of current-limiting resistance R16L, one end of the other end current-limiting resistance R17L of current-limiting resistance R16L, triode
The emitter terminal of Q13L connects, and the other end of current-limiting resistance R17L is managed with the other end of current-limiting resistance R18L, switch MOSFET
The gate terminal of Q14L and the gate terminal connection of switch MOSFET pipes Q15L；
The drain electrode end of switch MOSFET pipes Q14L is connect with one end of driving resistance R19L, the other end of driving resistance R19L
It is connect with one end of driving resistance R20L, and after one end interconnection of the other end of driving resistance R19L and driving resistance R20L
Lower half-bridge driving signal output end GUL is formed, the other end of driving resistance R20L connects with the drain electrode end of switch MOSFET pipes Q15L
It connects, the source terminal ground connection of switch MOSFET pipes Q15L.
The tertiary voltage is 3.3V, and the 4th voltage is 12V ~ 15V.
Advantages of the present invention：MOSFET tube drive circuits are bigger than the driving current of existing transistor drive circuit, driving
Electric current is big, it is ensured that meets the driving requirement of high-power half bridge circuit, securely and reliably.
Description of the drawings
Fig. 1 is existing half-bridge drive circuit.
Fig. 2 uses circuit diagram for the present invention's.
Reference sign：1-MOSFET half-bridge circuits, 2- transistor drive circuits, 3- triodes driving boostrap circuit,
10- half-bridge circuits, 20-MOSFET tube drive circuits and 30- boostrap circuits.
Specific implementation mode
With reference to specific drawings and examples, the invention will be further described.
As shown in Figure 2：Half-bridge circuit 10 is effectively driven in order to realize, it is ensured that half-bridge circuit 10 works reliable
Property, the present invention include upper half-bridge drive signal amplification output circuit and lower half-bridge drive signal amplification output circuit, it is described on
Half-bridge driven signal amplification output circuit includes triode Q11H, triode Q12H and triode Q13H；The triode
The base terminal of Q11H is connect with one end of current-limiting resistance R12H, the other end of current-limiting resistance R12H and the one of pull-up resistor R11H
End, filter capacitor C11H one end connection, the filter capacitor C11H the other end ground connection, the other end of pull-up resistor R11H with
First voltage connects, and the other end of current-limiting resistance R12 is also connect with control signal input U+；
The emitter of triode Q11H is grounded by divider resistance R13H, the collector terminal and divider resistance of triode Q11H
One end of R14H and the base terminal connection of triode Q12H, the other end of the divider resistance R14 are connect with boostrap circuit 30,
The collector terminal of triode Q12H respectively with the anode tap of reverse protection diode D11H, the base terminal and limit of triode Q13H
One end of leakage resistance R15H connects, the emitter terminal of triode Q12H and the other end of divider resistance R14, current-limiting resistance R18H
The source terminal of one end and switch MOSFET pipes Q14H connect；
The other end of current-limiting resistance R18H and one end of current-limiting resistance R17H, switch MOSFET pipes Q14H gate terminal and
The gate terminal of switch MOSFET pipes Q15H connects, the other end of current-limiting resistance R17H and one end of current-limiting resistance R16H and three poles
The emitter terminal of pipe Q13H connects, and the other end of current-limiting resistance R16H is connect with the cathode terminal of reverse protection diode D11H, and three
The collector terminal of pole pipe Q13H, the other end of current-limiting resistance R15H are connect with the source terminal of switch MOSFET pipes Q15H, and three
After the source terminal of the collector terminal of pole pipe Q13H, the other end of current-limiting resistance R15 and switch MOSFET pipes Q15H is connected with each other
Form driving circuit connecting pin；
The drain electrode end of switch MOSFET pipes Q14H is connect with one end of driving resistance R19H, the other end of driving resistance R19H
It being connect with one end of driving resistance R20H, the other end of driving resistance R20H is connect with the drain electrode end of switch MOSFET pipes Q15H,
And form upper half-bridge driving signal output end after driving the other end of resistance R19H and one end of driving resistance R20H to be connected with each other
GUH。
The lower half-bridge drive signal amplification output circuit includes triode Q11L, triode Q12L and triode
Q13L；The base terminal of the triode Q11L connect with one end of driving resistance R12L, drive the other end of resistance R12L with it is upper
One end of pull-up resistor R11L and one end connection of filter capacitor C11L, the other end ground connection of filter capacitor C11L, pull-up resistor
The other end of R11L is connect with tertiary voltage, and the other end of resistance R12L is driven also to be connect with control signal input U-；
The emitter terminal of triode Q11L is grounded by divider resistance R13L, collector terminal and the partial pressure electricity of triode Q11L
Hinder one end of R14L and the base terminal connection of triode Q12L, the transmitting of the other end and triode Q12L of divider resistance R14L
Extremely, one end of current-limiting resistance R18L, the source terminal of switch MOSFET pipes Q14L and the connection of the 4th voltage, triode Q12L's
Anode tap, the base terminal of triode Q13L and one end of current-limiting resistance R15L of collector terminal and reverse protection diode D11L
Connection, the other end of current-limiting resistance R15 and the emitter terminal of triode Q13L are grounded, the moon of reverse protection diode D11L
It is extremely connect with one end of current-limiting resistance R16L, one end of the other end current-limiting resistance R17L of current-limiting resistance R16L, triode
The emitter terminal of Q13L connects, and the other end of current-limiting resistance R17L is managed with the other end of current-limiting resistance R18L, switch MOSFET
The gate terminal of Q14L and the gate terminal connection of switch MOSFET pipes Q15L；
The drain electrode end of switch MOSFET pipes Q14L is connect with one end of driving resistance R19L, the other end of driving resistance R19L
It is connect with one end of driving resistance R20L, and after one end interconnection of the other end of driving resistance R19L and driving resistance R20L
Lower half-bridge driving signal output end GUL is formed, the other end of driving resistance R20L connects with the drain electrode end of switch MOSFET pipes Q15L
It connects, the source terminal ground connection of switch MOSFET pipes Q15L.
Specifically, the tertiary voltage is 3.3V, and the 4th voltage is 12V ~ 15V.The first voltage is 3.3V voltages, the
Two voltages are 12V ~ 15V.Triode Q11H is NPN triode, and triode Q12H and triode Q13H are PNP triode.Three
Pole pipe Q11L is NPN triode, and triode Q12L and triode Q13L are PNP triode.
The boostrap circuit 30 includes backward dioded D12 and electrolytic capacitor C12, the sun of the backward dioded D12
It is extremely connect with second voltage, the cathode terminal of backward dioded D12 and the other end of divider resistance R14, the hair of triode Q12H
The anode at emitter-base bandgap grading end, the source terminal of switch MOSFET pipes Q14H and electrolytic capacitor C12 connects, the negative terminal of electrolytic capacitor C12 with
Motor phase line connecting pin connects.
In the embodiment of the present invention, upper half-bridge drive signal amplification output circuit and upper half-bridge drive signal amplification output circuit
Form MOSFET driving circuits 20.Half-bridge circuit 10 includes upper half-bridge circuit and lower half-bridge circuit, wherein upper half-bridge circuit packet
The gate terminal for including half-bridge MOSFET pipes Q16H, the upper half-bridge MOSFET pipes Q16H is connect with one end of driving resistance R22H,
The other end of driving resistance R22H is connect with one end of one end of driving resistance R21H, filter capacitor C12H, and drives resistance
The other end of R22H is also connect with upper half-bridge driving signal output end GUH, the drain electrode end and busbar of upper half-bridge MOSFET pipes Q16H
Voltage VBAT connections, the other end of driving resistance R21H and the other end of filter capacitor C12H are managed with upper half-bridge MOSFET
The drain electrode end of Q16H connects, and the drain electrode end of upper half-bridge MOSFET pipes Q16H is also connect with one end of pull down resistor R23, drop-down electricity
Hinder another termination Power Groud of R23.
Lower half-bridge circuit includes lower half-bridge MOSFET pipes Q16L, the gate terminal of the lower half-bridge MOSFET pipes Q16L and driving
One end of resistance R22L connects, and drives the other end of resistance R22L and the one end and filter capacitor C12L for driving resistance R21L
One end connects, and the other end of resistance R22L is driven also to be connect with lower half-bridge driving signal output end GUL.Drive resistance R22L's
The source terminal of the other end, the other end of filter capacitor C12L and lower half-bridge MOSFET pipes Q16L connects Power Groud.
The drain electrode end of the source terminal of upper half-bridge MOSFET pipes Q16H and lower half-bridge MOSFET pipes Q16L, resistance R21H it is another
Half-bridge circuit, which is formed, after one end connection at end, the other end of filter capacitor C21H and pull down resistor R23 exports connecting pin, it is described
Half-bridge circuit exports after connecting pin is connected with each other with the driving circuit connecting pin in MOSFET driving circuits 20 and forms motor phase line
Connecting pin, when being connected by half-bridge circuit 10 and controlling motor, motor phase terminal is used to connect with the phase line end of motor
It connects.
When specific works, the PWM that input is received by control signal input U+, control signal input U- controls letter
Number；When making the upper half-bridge MOSFET pipes Q16H in half-bridge circuit 10 be connected, then control signal input U+ receives low level, and
Control signal input U- receives high level.And when control signal input U+ receives low level, triode Q11H, triode
Q12H is in cut-off state, and triode Q13H is connected, so that the Q14H conductings of switch MOSFET pipes, second voltage pass through
Switch MOSFET pipes Q14H powers to the upper half-bridge MOSFET pipes Q16H of half-bridge circuit 10 so that upper half-bridge MOSFET pipes Q16H is led
It is logical.
In contrast, when control signal input U- is high level, triode Q11L, triode Q12L are both turned on, triode
Q13L ends, so that the Q14L cut-offs of switch MOSFET pipes, the 4th voltage can not be supplied to the lower half-bridge in half-bridge circuit 10
MOSFET pipes Q16L power supplies so that lower half-bridge MOSFET pipes Q16L cut-offs.
When making the lower half-bridge MOSFET pipes Q16L of half-bridge circuit 10 be connected, then control signal input U+ receives high electricity
It is flat, and control signal input U- receives low level.When control signal input U+ receives high level, triode Q11H, three poles
Pipe Q12H conductings, triode Q13H cut-offs, so that the Q14H cut-offs of switch MOSFET pipes, second voltage can not be supplied to half-bridge
The upper half-bridge MOSFET pipes Q16H of circuit 10 powers so that upper half-bridge MOSFET pipes Q16H cut-offs；In contrast, control signal is defeated
When to enter to hold U- be low level, triode Q11L, triode Q12L cut-off, triode Q13L conductings, so that switch MOSFET
Pipe Q14L conductings, the 4th voltage are powered by switch MOSFET pipes Q14L to the lower half-bridge MOSFET pipes Q16L of half-bridge circuit 10,
So that lower half-bridge MOSFET pipes Q16L conductings, after the conducting of second half MOSFET pipe Q16L, the source electrode of upper half-bridge MOSFET pipes Q16H
Equal to Power Groud is connected to, at this moment, second voltage is charged by D12 backward diodeds to charging capacitor C12, for upper half-bridge
The Q16H conductings of MOSFET pipes are prepared.
The various embodiments described above are merely to illustrate the present invention, wherein the structure of each component, connection type etc. are all can be
Variation, every equivalent variations carried out based on the technical solution of the present invention and improvement should not be excluded in the present invention
Protection domain except.
Claims (5)
1. a kind of half-bridge drive circuit, including upper half-bridge drive signal amplification output circuit and the amplification of lower half-bridge drive signal it is defeated
Go out circuit, it is characterized in that：The upper half-bridge drive signal amplification output circuit includes triode Q11H, triode Q12H and three
Pole pipe Q13H；The base terminal of the triode Q11H is connect with one end of current-limiting resistance R12H, the other end of current-limiting resistance R12H
It is connect with one end of one end of pull-up resistor R11H, filter capacitor C11H, the other end ground connection of the filter capacitor C11H, pull-up
The other end of resistance R11H is connect with first voltage, and the other end of current-limiting resistance R12 is also connect with control signal input U+；
The emitter of triode Q11H is grounded by divider resistance R13H, collector terminal and the divider resistance R14H of triode Q11H
One end and triode Q12H base terminal connection, the other end and boostrap circuit of the divider resistance R14H（30）Connection,
The collector terminal of triode Q12H respectively with the anode tap of reverse protection diode D11H, the base terminal and limit of triode Q13H
One end of leakage resistance R15H connects, the emitter terminal of triode Q12H and the other end of divider resistance R14H, current-limiting resistance R18H
One end and switch MOSFET pipes Q14H source terminal connection；
The other end of current-limiting resistance R18H and one end of current-limiting resistance R17H, the gate terminal and switch of switch MOSFET pipes Q14H
The gate terminal of MOSFET pipes Q15H connects, the other end of current-limiting resistance R17H and one end of current-limiting resistance R16H and triode
The emitter terminal of Q13H connects, and the other end of current-limiting resistance R16H is connect with the cathode terminal of reverse protection diode D11H, three poles
The collector terminal of pipe Q13H, the other end of current-limiting resistance R15H are connect with the source terminal of switch MOSFET pipes Q15H, and three poles
Shape after the source terminal of the collector terminal of pipe Q13H, the other end of current-limiting resistance R15 and switch MOSFET pipes Q15H is connected with each other
At driving circuit connecting pin；
The drain electrode end of switch MOSFET pipes Q14H is connect with one end of driving resistance R19H, the other end of driving resistance R19H and drive
One end connection of dynamic resistance R20H, the other end of driving resistance R20H is connect with the drain electrode end of switch MOSFET pipes Q15H, and is driven
The other end of dynamic resistance R19H and one end of driving resistance R20H form upper half-bridge driving signal output end GUH after being connected with each other.
2. half-bridge drive circuit according to claim 1, it is characterized in that：The first voltage is 3.3V voltages, triode
Q11H is NPN triode, and triode Q12H and triode Q13H are PNP triode.
3. half-bridge drive circuit according to claim 1, it is characterized in that：The boostrap circuit（30）Including backward dioded
D12 and electrolytic capacitor C12, the anode tap of the backward dioded D12 are connect with second voltage, the moon of backward dioded D12
Extremely with the other end of divider resistance R14H, the emitter terminal of triode Q12H, switch MOSFET pipes Q14H source terminal and
The anode of electrolytic capacitor C12 connects, and the negative terminal of electrolytic capacitor C12 is connect with motor phase line connecting pin.
4. half-bridge drive circuit according to claim 1, it is characterized in that：The lower half-bridge drive signal amplification output circuit
Including triode Q11L, triode Q12L and triode Q13L；The base terminal of the triode Q11L and driving resistance R12L
One end connection, the other end of driving resistance R12L and one end of one end of pull-up resistor R11L and filter capacitor C11L connect
It connects, the other end ground connection of filter capacitor C11L, the other end of pull-up resistor R11L is connect with tertiary voltage, and drives resistance R12L
The other end also connect with control signal input U-；
The emitter terminal of triode Q11L is grounded by divider resistance R13L, the collector terminal and divider resistance of triode Q11L
One end of R14L and the base terminal connection of triode Q12L, the emitter of the other end and triode Q12L of divider resistance R14L
End, one end of current-limiting resistance R18L, the source terminal of switch MOSFET pipes Q14L and the connection of the 4th voltage, the collection of triode Q12L
One end of electrode tip and the anode tap of reverse protection diode D11L, the base terminal of triode Q13L and current-limiting resistance R15L connects
It connects, the other end of current-limiting resistance R15L and the collector terminal of triode Q13L are grounded, the moon of reverse protection diode D11L
It is extremely connect with one end of current-limiting resistance R16L, one end of the other end current-limiting resistance R17L of current-limiting resistance R16L, triode
The emitter terminal of Q13L connects, and the other end of current-limiting resistance R17L is managed with the other end of current-limiting resistance R18L, switch MOSFET
The gate terminal of Q14L and the gate terminal connection of switch MOSFET pipes Q15L；
The drain electrode end of switch MOSFET pipes Q14L is connect with one end of driving resistance R19L, the other end of driving resistance R19L and drive
One end connection of dynamic resistance R20L, and formed after driving the other end of resistance R19L and one end of driving resistance R20L to be connected with each other
The other end of lower half-bridge driving signal output end GUL, driving resistance R20L are connect with the drain electrode end of switch MOSFET pipes Q15L, are opened
Close the source terminal ground connection of MOSFET pipes Q15L.
5. half-bridge drive circuit according to claim 4, it is characterized in that：The tertiary voltage is 3.3V, and the 4th voltage is
12V~15V。
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| CN106208637B (en) * | 2016-09-12 | 2019-07-02 | 中国矿业大学 | A kind of driving circuit of switched reluctance machines MOSFET power inverter |
| CN106655867A (en) * | 2017-02-24 | 2017-05-10 | 常熟理工学院 | Half-bridge driving circuit formed by discrete MOSFET |
| CN110401330B (en) * | 2019-06-20 | 2024-05-07 | 浙江亚特电器股份有限公司 | Driving circuit for MOSFET driving |
| CN111599150A (en) * | 2020-05-15 | 2020-08-28 | 合智和利(山东)智能设备有限公司 | Execution end based on real-time teleoperation multifunctional application platform |
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| CN203225650U (en) * | 2013-04-01 | 2013-10-02 | 潍坊海蓝环保科技有限公司 | Half-bridge drive circuit |
| CN103683872A (en) * | 2012-09-11 | 2014-03-26 | 深圳市海洋王照明工程有限公司 | Half-bridge driving circuit |
| CN103683871A (en) * | 2012-09-11 | 2014-03-26 | 深圳市海洋王照明工程有限公司 | Half-bridge drive circuit |
| CN203840191U (en) * | 2014-04-24 | 2014-09-17 | 科博达技术有限公司 | MOSFET half bridge drive circuit |
| CN205051676U (en) * | 2015-10-30 | 2016-02-24 | 无锡新洁能股份有限公司 | Half -bridge drive circuit |
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| US8405422B2 (en) * | 2010-09-30 | 2013-03-26 | Fuji Electric Co., Ltd. | Level shift circuit |
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| CN103683872A (en) * | 2012-09-11 | 2014-03-26 | 深圳市海洋王照明工程有限公司 | Half-bridge driving circuit |
| CN103683871A (en) * | 2012-09-11 | 2014-03-26 | 深圳市海洋王照明工程有限公司 | Half-bridge drive circuit |
| CN203225650U (en) * | 2013-04-01 | 2013-10-02 | 潍坊海蓝环保科技有限公司 | Half-bridge drive circuit |
| CN203840191U (en) * | 2014-04-24 | 2014-09-17 | 科博达技术有限公司 | MOSFET half bridge drive circuit |
| CN205051676U (en) * | 2015-10-30 | 2016-02-24 | 无锡新洁能股份有限公司 | Half -bridge drive circuit |
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