CN206332606U - FET drive circuit - Google Patents
FET drive circuit Download PDFInfo
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- CN206332606U CN206332606U CN201621459944.6U CN201621459944U CN206332606U CN 206332606 U CN206332606 U CN 206332606U CN 201621459944 U CN201621459944 U CN 201621459944U CN 206332606 U CN206332606 U CN 206332606U
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- fet
- secondary windings
- drive circuit
- grid
- triode
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Abstract
The utility model discloses a kind of FET drive circuit, including high frequency transformer B1 and FET, the FET drive circuit of one of secondary windings of the high frequency transformer B1 is one end of secondary windings successively through electric capacity C3, FET Q5 grid is connected after resistance R1 and diode D2, the other end connection FET Q5 of secondary windings source electrode, the base stage that the connecting node of resistance R1 and diode D1 positive poles passes through resistance R3 connecting triodes Q3, triode Q3 colelctor electrode connection FET Q5 source electrode, triode Q3 emitter stage connection FET Q5 grid, the drive circuit of other secondary windings is identical with the drive circuit of above-mentioned secondary windings.Discharge current is amplified by the utility model by triode Q3, the grid voltage for the FET that can release faster so that during FET unlatching next time, the voltage (electric current) not remained, preferably to protect FET.
Description
Technical field
The utility model belongs to electronic technology field, and in particular to a kind of FET drive circuit.
Background technology
As shown in figure 1, in high frequency switch power, plain edition drive circuit passes through diode and height when metal-oxide-semiconductor is turned off
The winding of frequency power transformer is discharged, and discharge current flows to the source electrode of metal-oxide-semiconductor through diode, winding, and discharge current is smaller, electric discharge
Speed is slow, in metal-oxide-semiconductor unlatching next time, also has aftercurrent, after adding up for a long time, is easily caused metal-oxide-semiconductor damage.
Utility model content
The utility model technical issues that need to address are to provide a kind of quick bleed off grid voltage, improve the FET longevity
Life, increases the FET drive circuit of power supply reliability.
To solve the above problems, technical solution adopted in the utility model is：
A kind of FET drive circuit, including high frequency transformer B1 and FET, the high frequency transformer B1 bags
Include more than one secondary windings, the FET drive circuit of one of secondary windings include electric capacity C3, resistance R1, R3,
Diode D2, FET Q5 and triode Q3, one end of the secondary windings is successively through electric capacity C3, resistance R1 and diode
FET Q5 grid, the other end connection FET Q5 of secondary windings source electrode, resistance R1 and two poles are connected after D2
The connecting node of pipe D2 positive poles passes through resistance R3 connecting triodes Q3 base stage, triode Q3 colelctor electrode connection FET Q5
Source electrode, triode Q3 emitter stage connection FET Q5 grid, the FET drive circuit of other secondary windings with
The FET drive circuit of above-mentioned secondary windings has identical circuit structure.
Further, voltage-stabiliser tube D4, the voltage-stabiliser tube D4 are also parallel between the grid and source electrode of the FET Q5
Positive pole connection FET Q5 source electrode, voltage-stabiliser tube D4 negative pole connection FET Q5 grid.
It is using the beneficial effect produced by above-mentioned technical proposal：
Discharge current is amplified by the utility model by triode Q3, the grid for the FET that can release faster
Voltage so that during FET unlatching next time, the voltage (electric current) not remained, preferably to protect FET, field-effect
Shunt regulator tube between the grid and source electrode of pipe, can preferably protect the grid of FET, improve service life.
Brief description of the drawings
Fig. 1 is existing plain edition FET driver circuit schematic diagram,
Fig. 2 is the utility model circuit theory diagrams.
Embodiment
Utility model is described in further detail below in conjunction with the accompanying drawings：
The utility model is a kind of FET drive circuit for Switching Power Supply, can compared with conventional driving circuit
Quickly by the voltage bleed off of grid, to prevent that voltage from accumulating, FET is damaged.
Include more than one secondary as shown in Fig. 2 the utility model includes high frequency transformer B1, the high frequency transformer B1
Level winding, the FET drive circuit of one of secondary windings includes electric capacity C3, resistance R1, R3, diode D2, field-effect
Pipe Q5 and triode Q3, one end of the secondary windings connects field-effect after electric capacity C3, resistance R1 and diode D2 successively
Pipe Q5 grid, the other end connection FET Q5 of secondary windings source electrode, the connection of resistance R1 and diode D2 positive poles
Node passes through resistance R3 connecting triodes Q3 base stage, triode Q3 colelctor electrode connection FET Q5 source electrode, triode
Q3 emitter stage connection FET Q5 grid, the FET drive circuit of another secondary windings includes electric capacity C2, electricity
Hinder R2, R4, diode D3, FET Q6 and triode Q4, one end of the secondary windings successively through electric capacity C2, resistance R2 with
And FET Q6 grid, the other end connection FET Q6 of secondary windings source electrode, resistance are connected after diode D3
The connecting node of R2 and diode D3 positive poles passes through resistance R4 connecting triodes Q4 base stage, triode Q4 colelctor electrode connection field
Effect pipe Q6 source electrode, triode Q4 emitter stage connection FET Q6 grid, the grid of the FET Q5 and source
Voltage-stabiliser tube D4, the voltage-stabiliser tube D4 positive pole connection FET Q5 source electrode, voltage-stabiliser tube D4 negative pole are also parallel between pole
Connect FET Q5 grid.Voltage-stabiliser tube D5, the voltage-stabiliser tube D5 are also parallel between FET Q6 grid and source electrode
Positive pole connection FET Q6 source electrode, voltage-stabiliser tube D5 negative pole connection FET Q6 grid.As seen from Figure 1,
The FET drive circuit of another secondary windings has identical with the FET drive circuit of one of secondary windings
Circuit structure.Therefore, if high frequency transformer B1 secondary windings is two or more, the FET drive circuit of remaining winding
Also there should be identical circuit structure.
Operation principle：
As shown in Fig. 2 when input PWM-OUT has drive signal, drive signal passes through totem-pote circuit and high frequency
After transformer B1, there is provided FET Q5, Q6 is given after entering line phase upset through electric capacity C2, electric capacity C3, voltage-stabiliser tube D4, D5 are used to
The grid of FET is protected, when FET Q5, Q6 are turned off, is discharged by triode Q3, Q4 to FET, Neng Gougeng
The service life of good raising power tube (i.e. FET), increases the reliability of power supply.
Claims (2)
1. a kind of FET drive circuit, including high frequency transformer B1 and FET, it is characterised in that：The high frequency becomes
Depressor B1 includes more than one secondary windings, and the FET drive circuit of one of secondary windings includes electric capacity C3, electricity
Hinder R1, R3, diode D2, FET Q5 and triode Q3, one end of the secondary windings successively through electric capacity C3, resistance R1 with
And FET Q5 grid, the other end connection FET Q5 of secondary windings source electrode, resistance are connected after diode D2
The connecting node of R1 and diode D2 positive poles passes through resistance R3 connecting triodes Q3 base stage, triode Q3 colelctor electrode connection field
Effect pipe Q5 source electrode, triode Q3 emitter stage connection FET Q5 grid, the FET of other secondary windings drives
The FET drive circuit of dynamic circuit and above-mentioned secondary windings has identical circuit structure.
2. FET drive circuit according to claim 1, it is characterised in that the grid of the FET Q5 and source
Voltage-stabiliser tube D4, the voltage-stabiliser tube D4 positive pole connection FET Q5 source electrode, voltage-stabiliser tube D4 negative pole are also parallel between pole
Connect FET Q5 grid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621459944.6U CN206332606U (en) | 2016-12-29 | 2016-12-29 | FET drive circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621459944.6U CN206332606U (en) | 2016-12-29 | 2016-12-29 | FET drive circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206332606U true CN206332606U (en) | 2017-07-14 |
Family
ID=59292660
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621459944.6U Active CN206332606U (en) | 2016-12-29 | 2016-12-29 | FET drive circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206332606U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108923622A (en) * | 2018-06-14 | 2018-11-30 | 湖北德普电气股份有限公司 | Metal-oxide-semiconductor fast drive circuit |
| CN111293863A (en) * | 2020-03-25 | 2020-06-16 | 深圳市博敏电子有限公司 | Bidirectional switch floating ground driving circuit and multi-way switch driving circuit thereof |
-
2016
- 2016-12-29 CN CN201621459944.6U patent/CN206332606U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108923622A (en) * | 2018-06-14 | 2018-11-30 | 湖北德普电气股份有限公司 | Metal-oxide-semiconductor fast drive circuit |
| CN111293863A (en) * | 2020-03-25 | 2020-06-16 | 深圳市博敏电子有限公司 | Bidirectional switch floating ground driving circuit and multi-way switch driving circuit thereof |
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