CN108923622A - Metal-oxide-semiconductor fast drive circuit - Google Patents
Metal-oxide-semiconductor fast drive circuit Download PDFInfo
- Publication number
- CN108923622A CN108923622A CN201810614901.8A CN201810614901A CN108923622A CN 108923622 A CN108923622 A CN 108923622A CN 201810614901 A CN201810614901 A CN 201810614901A CN 108923622 A CN108923622 A CN 108923622A
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- China
- Prior art keywords
- diode
- electrically connected
- nmos tube
- oxide
- metal
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electronic Switches (AREA)
Abstract
The invention proposes a kind of metal-oxide-semiconductor fast drive circuits, wherein control signal is amplified, reach secondary, driving metal-oxide-semiconductor work by primary；Capacitor C3 is set, the high current of metal-oxide-semiconductor conducting moment is provided, realizes the fast driving conducting of metal-oxide-semiconductor；Diode D2 is set, provides an access as low-impedance as possible quickly releasing for metal-oxide-semiconductor grid source capacitance voltage, guarantees that switching tube can rapidly switch off, and driving circuit provides certain negative voltage and avoids being interfered and produces misleading during turning off.
Description
Technical field
The present invention relates to metal-oxide-semiconductor technical field more particularly to a kind of metal-oxide-semiconductor fast drive circuits.
Background technique
MOSFET due to switching frequency it is high, it is easy it is in parallel, required driving power is low etc., and that advantages have become Switching Power Supply is the most frequently used
One of device for power switching.And the quality of driving circuit directly affects the reliability and performance indicator of Switching Power Supply work.Function
Rate metal-oxide-semiconductor belongs to voltage mode control device, as long as the voltage applied between grid and source electrode is more than that its threshold voltage will be connected.
Since MOSFET is there are junction capacity, flying up for its drain-source both end voltage will be produced by junction capacity at grid source both ends when shutdown
Raw interference voltage.The turn-off circuit impedance of common complementary drive circuit is small, though turn-off speed is fast, cannot provide negative pressure, therefore
Its anti-interference is poor.
Summary of the invention
In view of this, the invention proposes it is a kind of be able to achieve fast conducting, the MOS that grid source capacitance voltage is quickly released
Pipe fast drive circuit.
Metal-oxide-semiconductor fast drive circuit proposed by the present invention, including pulse transformer U1, capacitor C3, resistor R2 and two
Grade pipe D2, the external pulse power of pulse transformer U1 and successively with capacitor C3, resistor R2, NMOS tube grid G, NMOS tube source
Pole S is electrically connected to form electrical circuit, and diode D2 anode is electrically connected NMOS tube source S, and diode D2 cathode is electrically connected
NMOS tube drain D.
On this basis, it is preferred that further include resistor R1, diode D1, capacitor C1, breakdown diode D3, three poles
Pipe T1 and capacitor C2, wherein it connects after resistor R1, diode D1 are parallel with one another with capacitor C1, resistor R1, diode
The node between capacitor C3, resistor R2 is electrically connected D1 respectively, capacitor C1 and pulse transformer U1, NMOS tube source electrode
Node between S is electrically connected, and the node between breakdown diode D3 cathode and diode D1, capacitor C1 is electrically connected, just
Pole and triode T1 base stage are electrically connected, and the node between triode T1 collector and resistor R2, NMOS tube grid G electrically connects
It connects, the node between triode T1 emitter and pulse transformer U1, NMOS tube source S is electrically connected.
It is further preferred that further including breakdown diode D4 and breakdown diode D5, diode D4 cathode and resistor are worn
Node between R2, NMOS tube grid G is electrically connected, and wears diode D4 anode and breakdown diode D5 anode is electrically connected, hit
The node worn between diode D5 cathode and pulse transformer U1, NMOS tube source S is electrically connected.
It still more preferably, further include resistance R3, the one end section between resistor R2, NMOS tube grid G respectively
Point is electrically connected, the node between the other end and pulse transformer U1, NMOS tube source S is electrically connected.
Metal-oxide-semiconductor fast drive circuit of the invention has the advantages that compared with the existing technology：
(1) wherein control signal is amplified, reaches secondary by primary, generate corresponding pulses signal, driving
Metal-oxide-semiconductor work；
(2) capacitor C3 is set, the high current of metal-oxide-semiconductor conducting moment is provided, realizes the fast driving conducting of metal-oxide-semiconductor；
(3) diode D2 is set, provides an access as low-impedance as possible for metal-oxide-semiconductor grid source capacitance voltage
It quickly releases, guarantees that switching tube can rapidly switch off, and driving circuit provides certain negative voltage and avoids by dry during turning off
It disturbs and produces misleading.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
It obtains other drawings based on these drawings.
Fig. 1 is the circuit diagram of metal-oxide-semiconductor fast drive circuit of the present invention.
Specific embodiment
Below in conjunction with embodiment of the present invention, the technical solution in embodiment of the present invention is carried out clearly and completely
Description, it is clear that described embodiment is only some embodiments of the invention, rather than whole embodiments.Base
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts all
Other embodiments shall fall within the protection scope of the present invention.
As shown in Figure 1, metal-oxide-semiconductor fast drive circuit of the invention, including pulse transformer U1, capacitor C3, resistor
R2, diode D2, resistor R1, diode D1, capacitor C1, breakdown diode D3, triode T1, capacitor C2, breakdown two
Pole pipe D4, breakdown diode D5 and resistance R3.
Thus the external pulse power of pulse transformer U1 generates corresponding pulses signal, driving NMOS tube work in secondary.Its
It successively is electrically connected to form electrical circuit with capacitor C3, resistor R2, NMOS tube grid G, NMOS tube source S, diode D2 is just
Pole is electrically connected NMOS tube source S, and diode D2 cathode is electrically connected NMOS tube drain D.In this way, capacitor C3 can provide NMOS
The high current of moment is connected in pipe, realizes the fast driving conducting of NMOS tube；Diode D2 provide one it is as low-impedance as possible
Access is quickly released for NMOS tube grid source capacitance voltage, guarantees that switching tube can rapidly switch off, and drives electricity during turning off
Road, which provides certain negative voltage and avoids being interfered, to produce misleading.
Resistor R1, diode D1 it is parallel with one another after connects with capacitor C1, resistor R1, diode D1 respectively with capacitor
Node between device C3, resistor R2 is electrically connected, the node between capacitor C1 and pulse transformer U1, NMOS tube source S
It is electrically connected, node electric connection, anode and triode T1 between breakdown diode D3 cathode and diode D1, capacitor C1
Base stage is electrically connected, the node electric connection between triode T1 collector and resistor R2, NMOS tube grid G, triode T1
Node between emitter and pulse transformer U1, NMOS tube source S is electrically connected.In this way, in normal work, due to R1 and
The effect of C1, voltage almost all load the fast conducting in NMOS tube.
Specifically, further including breakdown diode D4 and breakdown diode D5, diode D4 cathode and resistor R2, NMOS are worn
Node between tube grid G is electrically connected, and wears diode D4 anode and breakdown diode D5 anode is electrically connected, breakdown diode
Node between D5 cathode and pulse transformer U1, NMOS tube source S is electrically connected.
Specifically, further including resistance R3, the node between resistor R2, NMOS tube grid G electrically connects one end respectively
It connects, the node between the other end and pulse transformer U1, NMOS tube source S is electrically connected.
The foregoing is merely better embodiments of the invention, are not intended to limit the invention, all in spirit of the invention
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (4)
1. a kind of metal-oxide-semiconductor fast drive circuit, it is characterised in that：Including pulse transformer U1, capacitor C3, resistor R2 and two
Grade pipe D2, the external pulse power of pulse transformer U1 and successively with capacitor C3, resistor R2, NMOS tube grid G, NMOS tube source
Pole S is electrically connected to form electrical circuit, and diode D2 anode is electrically connected NMOS tube source S, and diode D2 cathode is electrically connected
NMOS tube drain D.
2. metal-oxide-semiconductor fast drive circuit as described in claim 1, it is characterised in that：Further include resistor R1, diode D1,
Capacitor C1, breakdown diode D3, triode T1 and capacitor C2, wherein after resistor R1, diode D1 are parallel with one another and electric
Container C1 series connection, the node between capacitor C3, resistor R2 is electrically connected respectively by resistor R1, diode D1, capacitor
Node between C1 and pulse transformer U1, NMOS tube source S is electrically connected, breakdown diode D3 cathode and diode D1, electricity
Node electric connection, anode and the electric connection of triode T1 base stage between container C1, triode T1 collector and resistor R2,
Node between NMOS tube grid G is electrically connected, between triode T1 emitter and pulse transformer U1, NMOS tube source S
Node is electrically connected.
3. metal-oxide-semiconductor fast drive circuit as claimed in claim 2, it is characterised in that：It further include breakdown diode D4 and breakdown
Diode D5, the node worn between diode D4 cathode and resistor R2, NMOS tube grid G are electrically connected, and are wearing diode D4 just
Pole and breakdown diode D5 anode are electrically connected, between breakdown diode D5 cathode and pulse transformer U1, NMOS tube source S
Node is electrically connected.
4. metal-oxide-semiconductor fast drive circuit as claimed in claim 3, it is characterised in that：Further include resistance R3, one end respectively with
Node between resistor R2, NMOS tube grid G is electrically connected, between the other end and pulse transformer U1, NMOS tube source S
Node is electrically connected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810614901.8A CN108923622A (en) | 2018-06-14 | 2018-06-14 | Metal-oxide-semiconductor fast drive circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810614901.8A CN108923622A (en) | 2018-06-14 | 2018-06-14 | Metal-oxide-semiconductor fast drive circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108923622A true CN108923622A (en) | 2018-11-30 |
Family
ID=64421556
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810614901.8A Pending CN108923622A (en) | 2018-06-14 | 2018-06-14 | Metal-oxide-semiconductor fast drive circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108923622A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111342641A (en) * | 2020-03-04 | 2020-06-26 | 华为技术有限公司 | Drive circuit and drive system of power switch device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2854916Y (en) * | 2005-11-02 | 2007-01-03 | 珠海泰坦科技股份有限公司 | Power field-effect transistor drive accelerating circuit |
| WO2016159948A1 (en) * | 2015-03-30 | 2016-10-06 | Halliburton Energy Services, Inc. | Simplified gate driver for power transistors |
| CN206332606U (en) * | 2016-12-29 | 2017-07-14 | 石家庄泽润科技有限公司 | FET drive circuit |
-
2018
- 2018-06-14 CN CN201810614901.8A patent/CN108923622A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2854916Y (en) * | 2005-11-02 | 2007-01-03 | 珠海泰坦科技股份有限公司 | Power field-effect transistor drive accelerating circuit |
| WO2016159948A1 (en) * | 2015-03-30 | 2016-10-06 | Halliburton Energy Services, Inc. | Simplified gate driver for power transistors |
| CN206332606U (en) * | 2016-12-29 | 2017-07-14 | 石家庄泽润科技有限公司 | FET drive circuit |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111342641A (en) * | 2020-03-04 | 2020-06-26 | 华为技术有限公司 | Drive circuit and drive system of power switch device |
| WO2021175085A1 (en) * | 2020-03-04 | 2021-09-10 | 华为技术有限公司 | Driving circuit of power switching device, and driving system |
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| Date | Code | Title | Description |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20181130 |
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| RJ01 | Rejection of invention patent application after publication |