CN111293863A - Bidirectional switch floating ground driving circuit and multi-way switch driving circuit thereof - Google Patents
Bidirectional switch floating ground driving circuit and multi-way switch driving circuit thereof Download PDFInfo
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- CN111293863A CN111293863A CN202010218735.7A CN202010218735A CN111293863A CN 111293863 A CN111293863 A CN 111293863A CN 202010218735 A CN202010218735 A CN 202010218735A CN 111293863 A CN111293863 A CN 111293863A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
Abstract
The invention discloses a bidirectional switch floating drive circuit and a multi-way switch drive circuit thereof, which comprise a primary side drive generating circuit, a primary side drive amplifying circuit, an isolation drive transformer T1, a secondary side half-wave rectifying circuit and a floating drive circuit; the primary side driving generation circuit comprises an AND gate and two input signals, wherein one input signal is a PWM wave, and the other input signal is an I/O signal; the isolation driving transformer T1 comprises a primary winding N1 and a secondary winding N2; the secondary side half-wave rectifying circuit comprises a rectifying diode D1 and a secondary side filter capacitor C2; the floating driving circuit comprises a bidirectional switching tube G, the bidirectional switching tube G comprises two N-type MOS tubes, and the grids and the sources of the two MOS tubes are respectively connected together. The invention can conveniently realize the long-time conduction or the closing of the bidirectional switch tube only by controlling the level state of the I/O signal.
Description
Technical Field
The invention relates to the technical field of switch circuits, in particular to a bidirectional switch floating ground driving circuit and a multi-way switch driving circuit thereof.
Background
Because the switching power supply has the characteristic of high efficiency, most power supplies in the market are switching power supplies at present. With the continuous development of the switching power supply technology, a plurality of topologies with excellent performance and unique structure appear, the rapid development of the topologies promotes the requirement of isolation driving, and as the topologies have the characteristics of simple circuit, difficult damage, low cost and the like, various isolation driving schemes are generated according to the characteristics, the isolation driving has high utilization rate in the floating driving topology, and meanwhile, the isolation driving also ensures the stability and the reliability of the switching power supply.
The high-order floating ground switch device must use the floating ground drive technology to make it turn on or turn off when working, generally include the chip of the floating ground drive technology often high price, and one kind of floating ground drive chip only corresponds one kind of circuit, can not accomplish the general of floating ground drive chip, can't be applied to some specific conditions, for example high pressure, special high frequency occasion, the floating ground drive chip need set up peripheral circuit, thereby increased the quantity of device, lead to the drive signal easily receive the problem of disturbing, the reliability is not high.
The traditional isolation driving mode is as follows: each high-order floating switch tube needs one PWM waveform to control the high-order floating switch tube, if the switch tubes are more in quantity, a general MCU cannot meet the requirement of the driving quantity of the high-order floating switch tubes of the circuit, the circuit is more complicated due to the increase of a control chip, the cost of the whole system is increased, and the application range of the system is limited.
In the direct current circuit breaker, a switching tube needs to be turned on or off for a long time, however, a common traditional driving circuit (as shown in figure 1) is difficult to achieve long-time conduction of the switching tube, and the circuit design difficulty is high; in order to realize the long-time conduction of the switch tube, the common optical coupling driving circuit (as shown in the attached drawing 2) in the direct current circuit breaker realizes the long-time driving of the switch tube, the secondary side of the optical coupling driving circuit needs to use extra power supply, and the corresponding power supply circuit is complex in design and high in cost.
Disclosure of Invention
Aiming at the defects in the prior art, the technical problems to be solved by the invention are as follows: how to provide a need not adopting extra driver chip, also need not adopt opto-coupler components and parts, just can realize the two-way switch that the switch tube switches on or closes for a long time floats ground drive circuit.
In addition, the invention also provides a multi-way switch driving circuit, and the circuit can drive the multi-way switch tubes simultaneously only by one PWM output, thereby simplifying the design of the whole driving circuit and reducing the design and use cost.
In order to solve the technical problems, the invention adopts the following technical scheme:
a bidirectional switch floating ground driving circuit comprises a primary side driving generation circuit, a primary side driving amplification circuit, an isolation driving transformer T1, a secondary side half-wave rectification circuit and a floating ground driving circuit which are electrically connected in sequence;
the primary side drive generating circuit comprises an AND gate and two paths of input signals of the AND gate, wherein one path of input signals of the AND gate is PWM waves, the other path of input signals of the AND gate is I/O signals capable of generating high and low levels, the output end of the AND gate is connected with the input end of the primary side drive amplifying circuit, and the primary side drive amplifying circuit is used for amplifying the signals at the output end of the AND gate;
the isolation driving transformer T1 comprises a primary winding N1 and a secondary winding N2, and the output end of the primary driving amplification circuit is connected with the primary winding N1;
the secondary side half-wave rectifying circuit comprises a rectifying diode D1 and a secondary side filter capacitor C2, and the rectifying diode D1 and the secondary side filter capacitor C2 are connected in series and then connected to two ends of the secondary side winding N2;
the floating driving circuit comprises a bidirectional switch tube G, the bidirectional switch tube G comprises two N-type MOS tubes, the grids of the two MOS tubes are connected together to serve as the grid of the bidirectional switch tube G and are connected with the cathode of the rectifier diode D1, and the sources of the two MOS tubes are connected together to serve as the source of the bidirectional switch tube G and are connected with one end, far away from the secondary side filter capacitor C2, of the secondary side filter capacitor C2, connected with the rectifier diode D1.
The working principle of the invention is as follows: when the I/O signal is at a high level, the output of the AND gate is a continuous PWM wave which is the same as the PWM wave of the input signal, the PWM wave output by the AND gate is amplified by the primary side drive amplifying circuit and then transmitted to the primary side winding N1 of the isolation drive transformer T1, and then transmitted to the secondary side winding N2 by the primary side winding N1, and the PWM wave signal transmitted to the secondary side winding N2 passes through the secondary side half-wave rectifying circuit to form a high level signal which is continuously output, and the high level signal acts on the two-way switching tube G and drives the two-way switching tube G to be kept in a conducting state; when the I/O signal is at a low level, no matter what signal state the PWM waveform is, the and gate outputs no signal, i.e., no signal is transmitted from the primary winding N1 of the isolation driving transformer T1 to the secondary winding N2, and the bidirectional switch tube G has no driving signal, and the bidirectional switch tube G remains in an off state.
The invention has the beneficial effects that: when the I/O signal is low level, the primary side does not transmit a driving signal to the secondary side, and the bidirectional switch tube G keeps a turn-off state, therefore, the invention only needs to control the level state of the I/O signal, can conveniently realize the long-time conduction or the turn-off of the bidirectional switch tube without adopting an additional driving chip and an optical coupler, the circuit design is simple, and the cost is lower.
Preferably, the fast turn-off circuit of the secondary side switching tube further comprises a fast turn-off circuit of the secondary side switching tube, the fast turn-off circuit of the secondary side switching tube comprises a secondary side discharge resistor R6 and a secondary side triode Q4, the secondary side discharge resistor R6 is connected with the secondary side filter capacitor C2 in parallel, the base of the secondary side triode Q4 is connected with the cathode of the rectifier diode D1, the emitter of the secondary side triode Q4 is connected with the grid of the bidirectional switching tube G, and the collector of the secondary side triode Q4 is connected with the source of the bidirectional switching tube G.
In this way, the secondary side switching tube rapid turn-off circuit is used for rapidly turning off the bidirectional switching tube G, and the secondary side discharge resistor R6 is used for consuming energy on the secondary side filter capacitor C2 when the bidirectional switching tube G is turned off; when the and gate I/O signal is low level, the and gate does not output a driving signal at this time, the primary side of the isolation driving transformer T1 does not have a driving signal, and the primary side does not have an isolation signal transmitted to the secondary side at this time, because the bidirectional switch tube G needs to be turned off quickly, it is necessary to consume the energy on the secondary filter capacitor C2 by using the secondary discharge resistor R6 quickly at this time, after the energy of the secondary filter capacitor C2 is released, the base voltage of the secondary triode Q4 is pulled to the ground quickly at this time, and the secondary triode Q4 is turned on, so that the energy stored in the parasitic capacitor of the bidirectional switch tube G is released quickly, the response speed of the bidirectional switch tube G is increased, and the requirement of the bidirectional switch tube G on quick turn-off is met.
Preferably, the secondary switching tube fast turn-off circuit is a triode base discharging resistor R7, one end of the triode base discharging resistor R7 is connected with the cathode of the rectifier diode D1, and the other end of the triode base discharging resistor R7 is connected with the base of the secondary triode Q4.
In this way, the base of the secondary triode Q4 is connected with the triode base discharging resistor R7, the triode base discharging resistor R7 can enable the secondary triode Q4 to always work in a saturation region, and meanwhile, the secondary triode Q4 can be prevented from generating false operation due to noise influence, in addition, when the secondary triode Q4 acts, time lag can be caused by residual charges, and the triode base discharging resistor R7 also has a discharging function.
Preferably, the primary side anti-transformer magnetic saturation circuit further comprises a primary side anti-transformer magnetic saturation circuit, the primary side anti-transformer magnetic saturation circuit comprises a blocking capacitor C1 and a primary side damping resistor R5, the blocking capacitor C1, the primary side winding N1 and the primary side damping resistor R5 are sequentially connected in series, one end, far away from the blocking capacitor C1, of the primary side winding N1 is connected with the output end of the primary side driving amplification circuit, and one end, far away from the primary side damping resistor R5, of the blocking capacitor C5, of the primary side winding N1 is grounded.
Therefore, the primary side transformer magnetic saturation prevention circuit is used for restoring the magnetic flux of the isolation driving transformer T1 to an initial state, and since the saturated transformer no longer has inductance characteristics and is equivalent to short-circuit straight-through, the primary side transformer magnetic saturation prevention circuit is used for preventing the saturation of the isolation driving transformer T1 so as to carry out next energy exchange, and prevent elements in the circuit and coils of the isolation driving transformer T1 from being burnt. Meanwhile, the primary damping resistor R5 can more effectively absorb the main components of higher harmonics generated by a secondary loop in the isolation driving transformer T1.
Preferably, the protection circuit further comprises a secondary side protection circuit, the secondary side protection circuit comprises a secondary side backflow prevention diode D2, an anode of the secondary side backflow prevention diode D2 is connected with a cathode of the rectifier diode D1, and a cathode of the secondary side backflow prevention diode D2 is connected with a gate of the bidirectional switch tube G.
Thus, the secondary side anti-backflow diode D2 is used to prevent the current from flowing reversely when the bidirectional switch tube G is turned off, and at the moment when the bidirectional switch tube G is turned off, the voltage still exists on the parasitic capacitor of the bidirectional switch tube G, and the secondary side anti-backflow diode D2 can effectively prevent the energy on the parasitic capacitor from flowing reversely back to the isolation driving transformer T1.
Preferably, the secondary side protection circuit further includes a secondary side current limiting resistor R8, one end of the secondary side current limiting resistor R8 is connected to the cathode of the secondary side anti-backflow diode D2, and the other end of the secondary side current limiting resistor R8 is connected to the gate of the bidirectional switch tube G.
Therefore, the secondary current limiting resistor R8 is used for limiting the magnitude of the current of the branch to prevent the bidirectional switch tube G connected in series from being burnt by overlarge current; meanwhile, the secondary current limiting resistor R8 also has the function of preventing oscillation, LC oscillation can be formed between the secondary current limiting resistor R8 and the grid capacitor of the bidirectional switch tube G under the condition that the driving signal is suddenly changed, and after the secondary current limiting resistor R8 is connected in series, the damping can be increased, so that the oscillation effect is reduced.
Preferably, the voltage regulator further comprises a secondary zener diode D3, wherein a cathode of the secondary zener diode D3 is connected to the gate of the bidirectional switch tube G, and an anode of the secondary zener diode D3 is connected to the source of the bidirectional switch tube G.
In this way, the secondary side zener diode D3 is used to protect the diac G from drive overvoltage breakdown on the gate of the diac G.
Preferably, the product of the capacitance value of the secondary filter capacitor C2 and the resistance value of the secondary discharge resistor R6 is a time constant, and the time constant is 0-7 us.
Therefore, the capacitance value of the secondary filter capacitor C2 and the resistance value of the secondary discharge resistor R6 influence the turn-off time of the bidirectional switch tube G, meanwhile, the secondary filter capacitor C2 and the rectifier diode D1 form a half-wave rectifier circuit, the capacitance value of the secondary filter capacitor C2 also influences the stability of a secondary drive signal, the product of the capacitance value of the secondary filter capacitor C2 and the resistance value of the secondary discharge resistor R6, namely a time constant, is controlled within 0-7us, and the stability of the output drive signal can be ensured when the requirement of quick turn-off of the bidirectional switch tube G is met.
Preferably, the dc blocking capacitor C1 is a non-polar capacitor, and the secondary transistor Q4 is a PNP transistor.
The multi-path switch driving circuit applying the bidirectional switch floating driving circuit is characterized in that the AND gates in all paths of bidirectional switch tube floating driving circuits are connected in parallel with the signal ends for inputting PWM waveforms.
Therefore, the signal ends of the AND gates in the two-way switch tube floating driving circuits, which are used for inputting PWM waveforms, are connected in parallel, so that the AND gates in the two-way switch tube floating driving circuits share one PWM waveform, and at the moment, the driving control of the multi-way two-way switch tube G can be realized only by changing the input level of the I/O signal of the AND gate in the two-way switch tube floating driving circuits.
Drawings
FIG. 1 is a diagram of an isolated floating-ground driving circuit in the prior art;
fig. 2 is a circuit schematic diagram of an optocoupler drive circuit in the prior art;
FIG. 3 is a schematic diagram of a bidirectional switch floating-ground driving circuit according to an embodiment of the present invention;
fig. 4 is a circuit diagram of a multi-way switch driving circuit using a bidirectional switch floating driving circuit according to an embodiment of the present invention.
Description of reference numerals: the device comprises a primary side drive amplifying circuit 1, a primary side transformer magnetic saturation preventing circuit 2, a secondary side half-wave rectifying circuit 3, a secondary side switching tube fast turn-off circuit 4 and a secondary side protection circuit 5.
Detailed Description
The invention will be further explained with reference to the drawings and the embodiments.
As shown in fig. 3, a bidirectional switch floating ground driving circuit comprises a primary side driving generation circuit, a primary side driving amplification circuit 1, an isolation driving transformer T1, a secondary side half-wave rectification circuit 3 and a floating ground driving circuit which are electrically connected in sequence;
the primary side drive generating circuit comprises an AND gate and two paths of input signals of the AND gate, wherein one path of input signal of the AND gate is a PWM wave, and the other path of input signal of the AND gate is an I/O signal capable of generating high and low levels, wherein the PWM wave and the I/O signal are both generated by a single chip microcomputer, the output end of the AND gate is connected with the input end of a primary side drive amplifying circuit 1, and the primary side drive amplifying circuit 1 is used for amplifying the signal at the output end of the AND gate; the driving amplifier module belongs to the known technology in the field of power electronics technology, and thus the detailed circuit is not described herein.
The isolation driving transformer T1 comprises a primary winding N1 and a secondary winding N2, and the output end of the primary driving amplification circuit 1 is connected with the primary winding N1; the isolation driving transformer T1 is used for carrying out isolation processing on the driving signal, obtaining an isolation signal and transmitting the isolation signal to the secondary half-wave rectification circuit 3, the secondary switching tube fast turn-off circuit 4 and the secondary protection circuit 5, and the ratio of the primary winding N1 to the secondary winding N2 of the isolation driving transformer T1 is designed according to specific circuit requirements.
The secondary side half-wave rectifying circuit 3 comprises a rectifying diode D1 and a secondary side filter capacitor C2, wherein the rectifying diode D1 and the secondary side filter capacitor C2 are connected in series and then connected to two ends of a secondary side winding N2; the secondary half-wave rectifier circuit 3 is used for rectifying the isolation signal transmitted by the isolation driving transformer T1 into a continuous high level.
The floating driving circuit comprises a bidirectional switch tube G, the bidirectional switch tube G comprises two N-type MOS tubes, the grids of the two MOS tubes are connected together to serve as the grid of the bidirectional switch tube G and are connected with the cathode of a rectifier diode D1, and the sources of the two MOS tubes are connected together to serve as the source of the bidirectional switch tube G and are connected with one end, far away from the end, connected with the rectifier diode D1, of a secondary filter capacitor C2.
The working principle of the invention is as follows: when the I/O signal is at a high level, the output of the AND gate is a continuous PWM wave which is the same as the PWM wave of the input signal, the PWM wave output by the AND gate is amplified by the primary side drive amplifying circuit 1 and then transmitted to the primary side winding N1 of the isolation drive transformer T1, and then transmitted to the secondary side winding N2 by the primary side winding N1, and the PWM wave signal transmitted to the secondary side winding N2 is converted into a high level signal which is continuously output after passing through the secondary side half-wave rectifying circuit 3, and the high level signal acts on the bidirectional switch tube G and drives the bidirectional switch tube G to keep a conducting state; when the I/O signal is at a low level, no matter what signal state the PWM waveform is, the and gate outputs no signal, i.e., no signal is transmitted from the primary winding N1 of the isolation driving transformer T1 to the secondary winding N2, and the bidirectional switch tube G has no driving signal, and the bidirectional switch tube G remains in an off state.
The invention has the beneficial effects that: when the I/O signal is in low level, the primary side does not transmit a driving signal to the secondary side, and the bidirectional switch tube G keeps in a turn-off state, therefore, the invention can conveniently realize the long-time turn-on or turn-off of the bidirectional switch tube only by controlling the level state of the I/O signal, compared with the prior art, the invention does not need to adopt an additional driving chip and does not need to adopt an optical coupler, the circuit design is simple, and the cost is lower.
In this embodiment, the fast turn-off circuit 4 further includes a secondary switching tube, the fast turn-off circuit 4 includes a secondary discharge resistor R6 and a secondary transistor Q4, the secondary discharge resistor R6 is connected in parallel with the secondary filter capacitor C2, the base of the secondary transistor Q4 is connected to the cathode of the rectifier diode D1, the emitter of the secondary transistor Q4 is connected to the gate of the bidirectional switching tube G, and the collector of the secondary transistor Q4 is connected to the source of the bidirectional switching tube G.
In this way, the secondary side switching tube fast turn-off circuit 4 is used for fast turning off the bidirectional switching tube G, and the secondary side discharge resistor R6 is used for consuming energy on the secondary side filter capacitor C2 when the bidirectional switching tube G is turned off; when the and gate I/O signal is low level, the and gate does not output a driving signal at this time, the primary side of the isolation driving transformer T1 does not have a driving signal, and the primary side does not have an isolation signal transmitted to the secondary side at this time, because the bidirectional switch tube G needs to be turned off quickly, it is necessary to consume the energy on the secondary filter capacitor C2 by using the secondary discharge resistor R6 quickly at this time, after the energy of the secondary filter capacitor C2 is released, the base voltage of the secondary triode Q4 is pulled to the ground quickly at this time, and the secondary triode Q4 is turned on, so that the energy stored in the parasitic capacitor of the bidirectional switch tube G is released quickly, the response speed of the bidirectional switch tube G is increased, and the requirement of the bidirectional switch tube G on quick turn-off is met. When the primary side PWM waveform period is 50us, the bidirectional switch tube G can be closed within 16us, and the response speed of the bidirectional switch tube G is improved.
In this embodiment, the secondary switching tube fast turn-off circuit 4 includes a transistor base discharging resistor R7, one end of the transistor base discharging resistor R7 is connected to the cathode of the rectifier diode D1, and the other end of the transistor base discharging resistor R7 is connected to the base of the secondary transistor Q4.
In this way, the base of the secondary triode Q4 is connected with the triode base discharging resistor R7, the triode base discharging resistor R7 can enable the secondary triode Q4 to always work in a saturation region, and meanwhile, the secondary triode Q4 can be prevented from generating false operation due to noise influence, in addition, when the secondary triode Q4 acts, time lag can be caused by residual charges, and the triode base discharging resistor R7 also has a discharging function.
In this embodiment, the primary side anti-transformer magnetic saturation circuit 2 is further included, the primary side anti-transformer magnetic saturation circuit 2 includes a dc blocking capacitor C1 and a primary side damping resistor R5, the dc blocking capacitor C1, the primary side winding N1 and the primary side damping resistor R5 are sequentially connected in series, one end of the dc blocking capacitor C1, which is far away from the primary side winding N1, is connected to the output end of the primary side driving amplification circuit 1, and one end of the primary side damping resistor R5, which is far away from the primary side winding N1, is grounded.
Therefore, the primary side transformer magnetic saturation prevention circuit 2 is used for restoring the magnetic flux of the isolation driving transformer T1 to an initial state, and since the saturated transformer no longer has inductance characteristics, which is equivalent to short-circuit straight-through, the scheme utilizes the primary side transformer magnetic saturation prevention circuit 2 to prevent the saturation of the isolation driving transformer T1 so as to carry out next energy exchange and avoid the burning of components in the circuit and the coil of the isolation driving transformer T1. Meanwhile, the primary damping resistor R5 can also more effectively absorb the main components of higher harmonics generated by a secondary loop in the isolation driving transformer T1, and the oscillation generated by the isolation driving transformer T1 in the circuit is not large, so the magnitude of the oscillation is selected to be 10 omega.
In this embodiment, the secondary side protection circuit 5 is further included, the secondary side protection circuit 5 includes a secondary side backflow prevention diode D2, an anode of the secondary side backflow prevention diode D2 is connected to a cathode of the rectifier diode D1, and a cathode of the secondary side backflow prevention diode D2 is connected to a gate of the bidirectional switch tube G.
Thus, the secondary side anti-backflow diode D2 is used to prevent the current from flowing reversely when the bidirectional switch tube G is turned off, and at the moment when the bidirectional switch tube G is turned off, the voltage still exists on the parasitic capacitor of the bidirectional switch tube G, and the secondary side anti-backflow diode D2 can effectively prevent the energy on the parasitic capacitor from flowing reversely back to the isolation driving transformer T1.
In this embodiment, the secondary protection circuit 5 further includes a secondary current-limiting resistor R8, one end of the secondary current-limiting resistor R8 is connected to the cathode of the secondary anti-backflow diode D2, and the other end of the secondary current-limiting resistor R8 is connected to the gate of the bidirectional switch tube G.
Therefore, the secondary current limiting resistor R8 is used for limiting the magnitude of the current of the branch to prevent the bidirectional switch tube G connected in series from being burnt by overlarge current; meanwhile, the secondary current limiting resistor R8 also has the function of preventing oscillation, LC oscillation can be formed between the secondary current limiting resistor R8 and the grid capacitor of the bidirectional switch tube G under the condition that the driving signal is suddenly changed, and after the secondary current limiting resistor R8 is connected in series, the damping can be increased, so that the oscillation effect is reduced.
In this embodiment, a secondary side zener diode D3 is further included, a cathode of the secondary side zener diode D3 is connected to the gate of the bidirectional switch tube G, and an anode of the secondary side zener diode D3 is connected to the source of the bidirectional switch tube G.
In this way, the secondary side zener diode D3 is used to protect the diac G from drive overvoltage breakdown on the gate of the diac G.
In this embodiment, the product of the capacitance of the secondary filter capacitor C2 and the resistance of the secondary discharge resistor R6 is a time constant, which is 0-7 us.
Therefore, the capacitance value of the secondary filter capacitor C2 and the resistance value of the secondary discharge resistor R6 influence the turn-off time of the bidirectional switch tube G, meanwhile, the secondary filter capacitor C2 and the rectifier diode D1 form a half-wave rectifier circuit, the capacitance value of the secondary filter capacitor C2 also influences the stability of a secondary drive signal, the product of the capacitance value of the secondary filter capacitor C2 and the resistance value of the secondary discharge resistor R6, namely a time constant, is controlled within 0-7us, and the stability of the output drive signal can be ensured when the requirement of quick turn-off of the bidirectional switch tube G is met.
In this embodiment, the dc blocking capacitor C1 is a non-polar capacitor, and is a PNP transistor of the secondary transistor Q4.
Thus, according to the actual requirement of the designed circuit, the calculation formula according to the blocking capacitor C1 is as follows:C1=I*0.8T/(2* Vdc)；
where I is the equivalent pulse current, Vdc is the DC input voltage, and T is the period of the PWM waveform.
In this embodiment, the secondary transistor Q4 must be in saturation state when being switched, the base current Ib of the secondary transistor Q4 should be 2 times of the collector current Ic/β to ensure that the secondary transistor Q4 is fully saturated, and the base resistance is calculated according to the base driving voltage Vbb and ohm's lawRb=Vbb/Ib。
As shown in fig. 4, in the multi-channel switch driving circuit using the bidirectional switch floating driving circuit, the signal ends of the gates for inputting the PWM waveforms in each channel of bidirectional switch floating driving circuit are connected in parallel.
Therefore, the signal ends of the AND gates in the two-way switch tube floating driving circuits, which are used for inputting PWM waveforms, are connected in parallel, so that the AND gates in the two-way switch tube floating driving circuits share one PWM waveform, and at the moment, the driving control of the multi-way two-way switch tube G can be realized only by changing the input level of the I/O signal of the AND gate in the two-way switch tube floating driving circuits.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention and not for limiting the technical solutions, and those skilled in the art should understand that modifications or equivalent substitutions can be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions, and all that should be covered by the claims of the present invention.
Claims (10)
1. A bidirectional switch floating ground driving circuit is characterized by comprising a primary side driving generation circuit, a primary side driving amplification circuit, an isolation driving transformer T1, a secondary side half-wave rectification circuit and a floating ground driving circuit which are sequentially and electrically connected;
the primary side drive generating circuit comprises an AND gate and two paths of input signals of the AND gate, wherein one path of input signals of the AND gate is PWM waves, the other path of input signals of the AND gate is I/O signals capable of generating high and low levels, the output end of the AND gate is connected with the input end of the primary side drive amplifying circuit, and the primary side drive amplifying circuit is used for amplifying the signals at the output end of the AND gate;
the isolation driving transformer T1 comprises a primary winding N1 and a secondary winding N2, and the output end of the primary driving amplification circuit is connected with the primary winding N1;
the secondary side half-wave rectifying circuit comprises a rectifying diode D1 and a secondary side filter capacitor C2, and the rectifying diode D1 and the secondary side filter capacitor C2 are connected in series and then connected to two ends of the secondary side winding N2;
the floating driving circuit comprises a bidirectional switch tube G, the bidirectional switch tube G comprises two N-type MOS tubes, the grids of the two MOS tubes are connected together to serve as the grid of the bidirectional switch tube G and are connected with the cathode of the rectifier diode D1, and the sources of the two MOS tubes are connected together to serve as the source of the bidirectional switch tube G and are connected with one end, far away from the secondary side filter capacitor C2, of the secondary side filter capacitor C2, connected with the rectifier diode D1.
2. The bidirectional switch floating-ground driving circuit according to claim 1, further comprising a secondary side switching tube fast turn-off circuit, wherein the secondary side switching tube fast turn-off circuit comprises a secondary side discharge resistor R6 and a secondary side transistor Q4, the secondary side discharge resistor R6 is connected in parallel with the secondary side filter capacitor C2, a base of the secondary side transistor Q4 is connected to a cathode of the rectifier diode D1, an emitter of the secondary side transistor Q4 is connected to a gate of the bidirectional switching tube G, and a collector of the secondary side transistor Q4 is connected to a source of the bidirectional switching tube G.
3. The bidirectional switch floating-ground driving circuit as claimed in claim 2, wherein the secondary switch tube fast turn-off circuit is a triode base discharge resistor R7, one end of the triode base discharge resistor R7 is connected to the cathode of the rectifier diode D1, and the other end of the triode base discharge resistor R7 is connected to the base of the secondary triode Q4.
4. The bidirectional switch floating-ground driving circuit according to claim 2, further comprising a primary-side anti-transformer magnetic saturation circuit, wherein the primary-side anti-transformer magnetic saturation circuit comprises a dc blocking capacitor C1 and a primary-side damping resistor R5, the dc blocking capacitor C1, the primary-side winding N1 and the primary-side damping resistor R5 are sequentially connected in series, one end of the dc blocking capacitor C1, which is far from the primary-side winding N1, is connected to the output end of the primary-side driving amplifying circuit, and one end of the primary-side damping resistor R5, which is far from the primary-side winding N1, is grounded.
5. The bidirectional switch floating-ground driving circuit of claim 1, further comprising a secondary side protection circuit, wherein the secondary side protection circuit comprises a secondary side anti-backflow diode D2, an anode of the secondary side anti-backflow diode D2 is connected to a cathode of the rectifying diode D1, and a cathode of the secondary side anti-backflow diode D2 is connected to a gate of the bidirectional switch tube G.
6. The bidirectional switch floating-ground driving circuit of claim 5, wherein the secondary side protection circuit further comprises a secondary side current-limiting resistor R8, one end of the secondary side current-limiting resistor R8 is connected to the cathode of the secondary side anti-backflow diode D2, and the other end of the secondary side current-limiting resistor R8 is connected to the gate of the bidirectional switch tube G.
7. The bidirectional switch floating-ground driving circuit of claim 1, further comprising a secondary zener diode D3, wherein a cathode of the secondary zener diode D3 is connected to the gate of the bidirectional switch tube G, and an anode of the secondary zener diode D3 is connected to the source of the bidirectional switch tube G.
8. The bidirectional switch floating-ground driving circuit of claim 1, wherein the product of the capacitance of the secondary filter capacitor C2 and the resistance of the secondary discharge resistor R6 is a time constant, and the time constant is 0-7 us.
9. The bidirectional switch floating-ground driving circuit of claim 4, wherein the blocking capacitor C1 is a non-polar capacitor, and the secondary transistor Q4 is a PNP transistor.
10. A multi-switch driving circuit using the bidirectional switch floating-ground driving circuit according to any one of claims 1 to 9, characterized in that: and connecting the AND gates in each two-way switch floating drive circuit in parallel with the signal ends for inputting PWM waveforms.
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| CN117175909A (en) * | 2023-11-02 | 2023-12-05 | 广东汇芯半导体有限公司 | Intelligent PFC module of single power switch IGBT |
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